KR101199033B1 - 디칼코게나이드 셀레늄 잉크, 및 그의 제조방법 및 용도 - Google Patents

디칼코게나이드 셀레늄 잉크, 및 그의 제조방법 및 용도 Download PDF

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Publication number
KR101199033B1
KR101199033B1 KR1020100068560A KR20100068560A KR101199033B1 KR 101199033 B1 KR101199033 B1 KR 101199033B1 KR 1020100068560 A KR1020100068560 A KR 1020100068560A KR 20100068560 A KR20100068560 A KR 20100068560A KR 101199033 B1 KR101199033 B1 KR 101199033B1
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South Korea
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group
selenium
substrate
source
providing
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Korean (ko)
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KR20110011547A (ko
Inventor
데이비드 모슬리
케빈 칼지아
찰스 스즈만다
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롬 앤드 하스 일렉트로닉 머트어리얼즈, 엘.엘.씨.
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D11/00—Inks
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D11/00—Inks
    • C09D11/02—Printing inks
    • C09D11/03—Printing inks characterised by features other than the chemical nature of the binder
    • C09D11/037—Printing inks characterised by features other than the chemical nature of the binder characterised by the pigment
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B19/00—Selenium; Tellurium; Compounds thereof
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D11/00—Inks
    • C09D11/52—Electrically conductive inks
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
    • C09K11/08—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials
    • C09K11/88—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials containing selenium, tellurium or unspecified chalcogen elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/167—Photovoltaic cells having only PN heterojunction potential barriers comprising Group I-III-VI materials, e.g. CdS/CuInSe2 [CIS] heterojunction photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/126—Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Wood Science & Technology (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inks, Pencil-Leads, Or Crayons (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Thin Film Transistor (AREA)
  • Photovoltaic Devices (AREA)
KR1020100068560A 2009-07-27 2010-07-15 디칼코게나이드 셀레늄 잉크, 및 그의 제조방법 및 용도 Active KR101199033B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/509,847 2009-07-27
US12/509,847 US8308973B2 (en) 2009-07-27 2009-07-27 Dichalcogenide selenium ink and methods of making and using same

Publications (2)

Publication Number Publication Date
KR20110011547A KR20110011547A (ko) 2011-02-08
KR101199033B1 true KR101199033B1 (ko) 2012-11-08

Family

ID=43447156

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020100068560A Active KR101199033B1 (ko) 2009-07-27 2010-07-15 디칼코게나이드 셀레늄 잉크, 및 그의 제조방법 및 용도

Country Status (6)

Country Link
US (2) US8308973B2 (https=)
EP (1) EP2287115B1 (https=)
JP (1) JP5666836B2 (https=)
KR (1) KR101199033B1 (https=)
CN (1) CN101967637A (https=)
TW (1) TWI432533B (https=)

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* Cited by examiner, † Cited by third party
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US20110137061A1 (en) * 2009-12-09 2011-06-09 Chi-Jie Wang Nanoink for forming absorber layer of thin film solar cell and method of producing the same
US8709917B2 (en) * 2010-05-18 2014-04-29 Rohm And Haas Electronic Materials Llc Selenium/group 3A ink and methods of making and using same
US8119506B2 (en) * 2010-05-18 2012-02-21 Rohm And Haas Electronic Materials Llc Group 6a/group 3a ink and methods of making and using same
WO2011146115A1 (en) 2010-05-21 2011-11-24 Heliovolt Corporation Liquid precursor for deposition of copper selenide and method of preparing the same
WO2012023973A2 (en) 2010-08-16 2012-02-23 Heliovolt Corporation Liquid precursor for deposition of indium selenide and method of preparing the same
TW201230379A (en) * 2010-09-15 2012-07-16 Precursor Energetics Inc Deposition processes and devices for photovoltaics
US8282995B2 (en) * 2010-09-30 2012-10-09 Rohm And Haas Electronic Materials Llc Selenium/group 1b/group 3a ink and methods of making and using same
US8343267B2 (en) * 2011-02-18 2013-01-01 Rohm And Haas Electronic Materials Llc Gallium formulated ink and methods of making and using same
US9105797B2 (en) * 2012-05-31 2015-08-11 Alliance For Sustainable Energy, Llc Liquid precursor inks for deposition of In—Se, Ga—Se and In—Ga—Se
US9842733B2 (en) * 2013-06-11 2017-12-12 Imec Vzw Method for dissolving chalcogen elements and metal chalcogenides in non-hazardous solvents
TWI527821B (zh) 2013-10-16 2016-04-01 國立中山大學 銀化合物、銀墨水及可撓式基板之噴印方法
HK1222836A1 (zh) * 2013-11-15 2017-07-14 Nanoco Technologies Ltd 富铜的铜铟(镓)二硒化物/二硫化物纳米粒子的制备

Citations (1)

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US20050009225A1 (en) 2003-07-10 2005-01-13 International Business Machines Corporation Hydrazine-free solution deposition of chalcogenide films

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US4520010A (en) * 1983-06-02 1985-05-28 Xerox Corporation Process for modifying the electrical properties of selenium, and selenium alloys
WO1993004212A1 (en) 1991-08-26 1993-03-04 Eastman Kodak Company Preparation of group iii element-group vi element compound films
AU2249201A (en) * 1999-11-16 2001-05-30 Midwest Research Institute A novel processing approach towards the formation of thin-film Cu(In,Ga)Se2
CN100490205C (zh) * 2003-07-10 2009-05-20 国际商业机器公司 淀积金属硫族化物膜的方法和制备场效应晶体管的方法
US7163835B2 (en) * 2003-09-26 2007-01-16 E. I. Du Pont De Nemours And Company Method for producing thin semiconductor films by deposition from solution
US20070166453A1 (en) * 2004-02-19 2007-07-19 Nanosolar, Inc. High-throughput printing of chalcogen layer
US7115304B2 (en) * 2004-02-19 2006-10-03 Nanosolar, Inc. High throughput surface treatment on coiled flexible substrates
US20080124831A1 (en) * 2004-02-19 2008-05-29 Robinson Matthew R High-throughput printing of semiconductor precursor layer from chalcogenide particles
US20070163640A1 (en) * 2004-02-19 2007-07-19 Nanosolar, Inc. High-throughput printing of semiconductor precursor layer by use of chalcogen-rich chalcogenides
US7306823B2 (en) * 2004-09-18 2007-12-11 Nanosolar, Inc. Coated nanoparticles and quantum dots for solution-based fabrication of photovoltaic cells
CN101443892B (zh) * 2006-02-23 2013-05-01 耶罗恩·K·J·范杜伦 硫属元素层的高生产量印刷和金属间材料的使用
US7494841B2 (en) * 2006-05-12 2009-02-24 International Business Machines Corporation Solution-based deposition process for metal chalcogenides
WO2008057119A1 (en) 2006-11-09 2008-05-15 Midwest Research Institue Formation of copper-indium-selenide and/or copper-indium-gallium-selenide films from indium selenide and copper selenide precursors
EP2944383A3 (en) 2006-11-09 2016-02-10 Alliance for Sustainable Energy, LLC Precursors for formation of copper selenide, indium selenide, copper indium diselenide, and/or copper indium gallium diselenide films
US20080280030A1 (en) * 2007-01-31 2008-11-13 Van Duren Jeoren K J Solar cell absorber layer formed from metal ion precursors
US20080264479A1 (en) * 2007-04-25 2008-10-30 Nanoco Technologies Limited Hybrid Photovoltaic Cells and Related Methods
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US8277894B2 (en) * 2009-07-16 2012-10-02 Rohm And Haas Electronic Materials Llc Selenium ink and methods of making and using same
US20110076798A1 (en) * 2009-09-28 2011-03-31 Rohm And Haas Electronic Materials Llc Dichalcogenide ink containing selenium and methods of making and using same

Patent Citations (1)

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Publication number Priority date Publication date Assignee Title
US20050009225A1 (en) 2003-07-10 2005-01-13 International Business Machines Corporation Hydrazine-free solution deposition of chalcogenide films

Also Published As

Publication number Publication date
US20110020981A1 (en) 2011-01-27
TWI432533B (zh) 2014-04-01
EP2287115B1 (en) 2014-03-05
US8308973B2 (en) 2012-11-13
CN101967637A (zh) 2011-02-09
JP5666836B2 (ja) 2015-02-12
EP2287115A2 (en) 2011-02-23
KR20110011547A (ko) 2011-02-08
US20130034933A1 (en) 2013-02-07
JP2011052206A (ja) 2011-03-17
EP2287115A3 (en) 2011-04-06
TW201107431A (en) 2011-03-01
US8513052B2 (en) 2013-08-20

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