KR101196358B1 - 리소그래피 장치 및 리소그래피 장치 작동 방법 - Google Patents

리소그래피 장치 및 리소그래피 장치 작동 방법 Download PDF

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Publication number
KR101196358B1
KR101196358B1 KR1020090087463A KR20090087463A KR101196358B1 KR 101196358 B1 KR101196358 B1 KR 101196358B1 KR 1020090087463 A KR1020090087463 A KR 1020090087463A KR 20090087463 A KR20090087463 A KR 20090087463A KR 101196358 B1 KR101196358 B1 KR 101196358B1
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South Korea
Prior art keywords
liquid
projection system
confinement structure
gas
liquid confinement
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English (en)
Korean (ko)
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KR20100032338A (ko
Inventor
예뢴 페터 요한네스 브루이예스텐스
리카르트 요제프 브룰스
한스 얀센
지베 란트헤어
아르나우트 요한네스 미스터
바우케 얀센
이보 아담 요한네스 토마스
마르치오 알렉산드레 카노 미란다
게오르게 타나사
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에이에스엠엘 네델란즈 비.브이.
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Publication of KR20100032338A publication Critical patent/KR20100032338A/ko
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020090087463A 2008-09-17 2009-09-16 리소그래피 장치 및 리소그래피 장치 작동 방법 Active KR101196358B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US9774308P 2008-09-17 2008-09-17
US61/097,743 2008-09-17
US15010609P 2009-02-05 2009-02-05
US61/150,106 2009-02-05

Publications (2)

Publication Number Publication Date
KR20100032338A KR20100032338A (ko) 2010-03-25
KR101196358B1 true KR101196358B1 (ko) 2012-11-01

Family

ID=42029409

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020090087463A Active KR101196358B1 (ko) 2008-09-17 2009-09-16 리소그래피 장치 및 리소그래피 장치 작동 방법

Country Status (4)

Country Link
JP (2) JP4972677B2 (https=)
KR (1) KR101196358B1 (https=)
CN (1) CN101676804B (https=)
TW (1) TWI457714B (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20170026563A (ko) * 2014-07-01 2017-03-08 에이에스엠엘 네델란즈 비.브이. 리소그래피 장치 및 리소그래피 장치를 제조하는 방법

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0647813B2 (ja) 1988-06-09 1994-06-22 動力炉・核燃料開発事業団 低水圧制御水理試験法
TWI457714B (zh) * 2008-09-17 2014-10-21 Ａｓｍｌ荷蘭公司 微影裝置及其操作方法
NL2017128A (en) * 2015-07-16 2017-01-23 Asml Netherlands Bv A lithographic apparatus, a projection system, a last lens element, a liquid control member and a device manufacturing method
CN110687752A (zh) * 2018-07-05 2020-01-14 上海微电子装备（集团）股份有限公司 湿空气制备装置、湿空气制备方法以及光刻装置
CN112684668B (zh) * 2020-12-25 2024-07-23 浙江启尔机电技术有限公司 一种浸液供给回收装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007083686A1 (ja) 2006-01-18 2007-07-26 Canon Kabushiki Kaisha 露光装置

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6197917A (ja) * 1984-10-19 1986-05-16 Hitachi Ltd Ｘ線露光装置
JP2004095654A (ja) * 2002-08-29 2004-03-25 Nikon Corp 露光装置及びデバイス製造方法
SG135052A1 (en) * 2002-11-12 2007-09-28 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
SG141426A1 (en) * 2003-04-10 2008-04-28 Nikon Corp Environmental system including vacuum scavange for an immersion lithography apparatus
US7411653B2 (en) * 2003-10-28 2008-08-12 Asml Netherlands B.V. Lithographic apparatus
US7352433B2 (en) * 2003-10-28 2008-04-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4479269B2 (ja) * 2004-02-20 2010-06-09 株式会社ニコン 露光装置及びデバイス製造方法
JP2006128192A (ja) * 2004-10-26 2006-05-18 Nikon Corp 保持装置、鏡筒、及び露光装置、並びにデバイス製造方法
US7411658B2 (en) * 2005-10-06 2008-08-12 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
DE102006021797A1 (de) * 2006-05-09 2007-11-15 Carl Zeiss Smt Ag Optische Abbildungseinrichtung mit thermischer Dämpfung
NL1035908A1 (nl) * 2007-09-25 2009-03-26 Asml Netherlands Bv Lithographic apparatus and device manufacturing method.
TWI457714B (zh) * 2008-09-17 2014-10-21 Ａｓｍｌ荷蘭公司 微影裝置及其操作方法
NL2003392A (en) * 2008-09-17 2010-03-18 Asml Netherlands Bv Lithographic apparatus and a method of operating the apparatus.

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007083686A1 (ja) 2006-01-18 2007-07-26 Canon Kabushiki Kaisha 露光装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20170026563A (ko) * 2014-07-01 2017-03-08 에이에스엠엘 네델란즈 비.브이. 리소그래피 장치 및 리소그래피 장치를 제조하는 방법

Also Published As

Publication number Publication date
JP5433045B2 (ja) 2014-03-05
KR20100032338A (ko) 2010-03-25
CN101676804A (zh) 2010-03-24
JP4972677B2 (ja) 2012-07-11
JP2010074159A (ja) 2010-04-02
TWI457714B (zh) 2014-10-21
TW201015237A (en) 2010-04-16
CN101676804B (zh) 2012-02-01
JP2012138631A (ja) 2012-07-19

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