KR101189206B1 - Polishing composition for primary polishing of wafer - Google Patents
Polishing composition for primary polishing of wafer Download PDFInfo
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- KR101189206B1 KR101189206B1 KR1020110063626A KR20110063626A KR101189206B1 KR 101189206 B1 KR101189206 B1 KR 101189206B1 KR 1020110063626 A KR1020110063626 A KR 1020110063626A KR 20110063626 A KR20110063626 A KR 20110063626A KR 101189206 B1 KR101189206 B1 KR 101189206B1
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- polishing
- abrasive particles
- polishing composition
- wafer
- composition
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- 238000005498 polishing Methods 0.000 title claims abstract description 135
- 239000000203 mixture Substances 0.000 title claims abstract description 45
- 239000002245 particle Substances 0.000 claims abstract description 23
- 239000003381 stabilizer Substances 0.000 claims abstract description 13
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 7
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 15
- 239000002738 chelating agent Substances 0.000 claims description 12
- 239000004094 surface-active agent Substances 0.000 claims description 10
- GLUUGHFHXGJENI-UHFFFAOYSA-N Piperazine Chemical compound C1CNCCN1 GLUUGHFHXGJENI-UHFFFAOYSA-N 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 6
- 150000007522 mineralic acids Chemical class 0.000 claims description 6
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 claims description 4
- 239000004327 boric acid Substances 0.000 claims description 4
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 claims description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 3
- 229910020203 CeO Inorganic materials 0.000 claims description 3
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 3
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 3
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 claims description 3
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 claims description 3
- 150000007524 organic acids Chemical class 0.000 claims description 3
- 235000005985 organic acids Nutrition 0.000 claims description 3
- 150000004885 piperazines Chemical class 0.000 claims description 3
- 239000006227 byproduct Substances 0.000 abstract description 4
- 238000001879 gelation Methods 0.000 abstract description 4
- 235000012431 wafers Nutrition 0.000 description 24
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 9
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical group [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 239000003002 pH adjusting agent Substances 0.000 description 6
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 230000009467 reduction Effects 0.000 description 4
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000002845 discoloration Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- MGFYIUFZLHCRTH-UHFFFAOYSA-N nitrilotriacetic acid Chemical compound OC(=O)CN(CC(O)=O)CC(O)=O MGFYIUFZLHCRTH-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 125000000129 anionic group Chemical group 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011859 microparticle Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002736 nonionic surfactant Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- DZCAZXAJPZCSCU-UHFFFAOYSA-K sodium nitrilotriacetate Chemical compound [Na+].[Na+].[Na+].[O-]C(=O)CN(CC([O-])=O)CC([O-])=O DZCAZXAJPZCSCU-UHFFFAOYSA-K 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000004383 yellowing Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
웨이퍼의 일차 연마를 위한 연마 조성물이 개시된다. 연마 조성물은 각각 평균 직경이 5 내지 150 nm인 연마 입자; pKa 값이 9 내지 10의 범위이고 양이 연마 입자의 7 내지 28 wt%인 pH 안정화제; 연마 촉진제; 및 물을 포함한다. 본 발명의 연마 조성물은 연마동안 연마 패드에 부착될 수 있는 부산물의 겔화를 효과적으로 감소시키고, 연마 속도를 증가시키고, 연마 질을 유지하고, 연마 패드의 성능 및 수명을 향상시킨다.A polishing composition for primary polishing of a wafer is disclosed. The polishing compositions each comprise abrasive particles having an average diameter of 5 to 150 nm; a pH stabilizer having a pKa value in the range of 9 to 10 and an amount of 7 to 28 wt% of the abrasive particles; Polishing accelerators; And water. The polishing composition of the present invention effectively reduces the gelation of by-products that may adhere to the polishing pad during polishing, increases the polishing rate, maintains the polishing quality, and improves the performance and life of the polishing pad.
Description
본 발명은 웨이퍼의 일차 연마를 위한 연마 조성물, 및 보다 구체적으로는 웨이퍼를 일차 연마하고 연마 속도 감소를 늦추기 위한 연마 조성물에 관한 것이다. The present invention relates to a polishing composition for primary polishing of a wafer, and more particularly to a polishing composition for primary polishing a wafer and slowing down the polishing rate.
반도체 산업에서는, 집적회로 장치를 제조하기 위해 실리콘 웨이퍼가 평탄화되어야 한다. 일반적으로, 웨이퍼는 평탄화를 위해 회전 연마기의 연마 패드상에 위치하며, 서브마이크로(sub-micro) 입자를 가지는 연마 슬러리가 평탄화를 위해 웨이퍼 표면상에 적용된다.In the semiconductor industry, silicon wafers must be planarized to manufacture integrated circuit devices. Generally, a wafer is placed on a polishing pad of a rotary polishing machine for planarization, and an abrasive slurry having sub-micro particles is applied on the wafer surface for planarization.
화학기계적 연마(CMP) 공정은 웨이퍼 표면의 미세거칠기(microroughness)를 낮추어 웨이퍼 표면을 평탄화하고, 미세스크레치(microscratches) 및 피트 마크(pit marks)와 같은 물리적인 표면 결함을 제거하기 위해 실리콘 웨이퍼를 제조하는데 적용되는 최종 공정이다. CMP 공정으로 연마후, 웨이퍼는 표면 결함이 적은 표면을 갖게 된다. 웨이퍼 연마를 위한 CMP 공정은 일반적으로 2 이상의 단계로 수행된다. 일차 연마 단계는 웨이퍼 표면상에 깊은 스크래치를 제거하기 위해 높은 연마 속도가 필요한 연마 단계이다. 그러나, 연마동안 형성된 부산물의 겔화로 이산화규소와 같은 연마 입자가 현탁되지 못하고 연마 패드의 표면에 바로 부착되기 때문에 연마 성능이 저하된다. 연마 속도가 증가되면 이런 상황은 더욱 악화된다.The chemical mechanical polishing (CMP) process lowers the microroughness of the wafer surface to planarize the wafer surface and fabricate the silicon wafer to remove physical surface defects such as microscratches and pit marks. Is the final process applied. After polishing by the CMP process, the wafer has a surface with few surface defects. The CMP process for wafer polishing is generally carried out in two or more steps. The primary polishing step is a polishing step that requires a high polishing rate to remove deep scratches on the wafer surface. However, the gelation of by-products formed during polishing causes abrasive particles, such as silicon dioxide, not to be suspended, but adhere directly to the surface of the polishing pad, thereby degrading the polishing performance. This situation is exacerbated when the polishing rate is increased.
또한, 미국 특허 제7,253,111호에는 배리어(barrier) 연마액의 황변 감소를 위해 EDTA 또는 시트르산을 포함하는 배리어 연마액이 개시되었다. 그밖에, 미국 특허 제6,509,269호는 비이온성 계면활성제를 함유하여 연마 패드의 광택가공(glazing)을 없앤 연마액을 기술하고 있다. 그러나, 이같은 연마액은 웨이퍼의 일차 연마가 아닌 알루미늄 또는 알루미늄 합금의 평탄화를 위해 이용되는 것이다.In addition, US Pat. No. 7,253,111 discloses a barrier polishing liquid comprising EDTA or citric acid to reduce yellowing of the barrier polishing liquid. In addition, US Pat. No. 6,509,269 describes a polishing liquid that contains a nonionic surfactant to eliminate glazing of the polishing pad. However, such a polishing liquid is used for the planarization of aluminum or an aluminum alloy rather than the primary polishing of a wafer.
따라서, 연마 패드의 연마 속도 감소를 늦춤으로써 연마 질을 유지하고 연마 패드의 수명을 증가시키는 웨이퍼의 일차 연마용 연마 조성물을 개발하는 것이 시급한 실정이다.Therefore, it is urgent to develop a polishing composition for primary polishing of a wafer that maintains polishing quality and increases the life of the polishing pad by slowing down the polishing rate of the polishing pad.
발명의 개요Summary of the Invention
본 발명은 웨이퍼의 일차 연마를 위한 연마 조성물을 제공한다. 연마 조성물은 각각 평균 직경이 5 내지 150 nm인 연마 입자; pKa 값이 9 내지 10의 범위이고 양이 연마 입자의 7 내지 28 wt%인 pH 안정화제; 연마 촉진제; 및 물을 포함한다.The present invention provides a polishing composition for primary polishing of a wafer. The polishing compositions each comprise abrasive particles having an average diameter of 5 to 150 nm; a pH stabilizer having a pKa value in the range of 9 to 10 and an amount of 7 to 28 wt% of the abrasive particles; Polishing accelerators; And water.
본 발명의 연마 입자는 SiO2, Al2O3, TiO2, CeO2 및 ZrO2로 구성된 그룹중에서 선택된 하나 이상이고, 직경이 작아서 연마 속도를 증가시킨다.The abrasive particles of the present invention are SiO 2 , Al 2 O 3 , TiO 2 , CeO 2 and It is at least one selected from the group consisting of ZrO 2 , and the diameter is small to increase the polishing rate.
본 발명의 연마 조성물중에, pH 안정화제는 알칸올아민, 무기산 및 유기산으로 구성된 그룹중에서 선택된 하나 이상이다. 알칸올아민은 모노에탄올아민, 디에탄올아민 및 트리에탄올아민으로 구성된 그룹중에서 선택된 하나 이상이고, 무기산은 붕산이다.In the polishing composition of the present invention, the pH stabilizer is at least one selected from the group consisting of alkanolamines, inorganic acids and organic acids. The alkanolamine is at least one selected from the group consisting of monoethanolamine, diethanolamine and triethanolamine, and the inorganic acid is boric acid.
또한, 연마 속도를 증가시킬 목적으로, 본 발명의 연마 조성물은 피페라진, 피페라진 염, 테트라메틸암모늄 하이드록사이드 및 테트라메틸암모늄 하이드록사이드 염으로 구성된 그룹중에서 선택된 하나 이상의 연마 촉진제를 포함하며, 연마 촉진제의 양은 연마 입자의 11 내지 35 wt%이다. 연마 조성물은 수산화나트륨, 수산화칼륨, 황산, 염산 또는 인산인 pH 조절제를 추가로 포함하고, pH 조절제는 연마 조성물의 pH 값을 약 10 부근이 되도록 조정하기 위해서 임의로 사용된다.In addition, for the purpose of increasing the polishing rate, the polishing composition of the present invention comprises at least one polishing promoter selected from the group consisting of piperazine, piperazine salt, tetramethylammonium hydroxide and tetramethylammonium hydroxide salt, The amount of polishing promoter is 11 to 35 wt% of the abrasive particles. The polishing composition further includes a pH adjuster that is sodium hydroxide, potassium hydroxide, sulfuric acid, hydrochloric acid, or phosphoric acid, and the pH adjuster is optionally used to adjust the pH value of the polishing composition to about 10.
일 측면으로, 연마 조성물은 킬레이트제 및 계면활성제를 더 포함하며, 킬레이트제의 양은 연마 입자의 5.9 내지 20 wt%이고, 계면활성제의 양은 연마 입자의 0.16 내지 0.18 wt%이다.In one aspect, the polishing composition further comprises a chelating agent and a surfactant, wherein the amount of the chelating agent is 5.9 to 20 wt% of the abrasive particles, and the amount of the surfactant is 0.16 to 0.18 wt% of the abrasive particles.
본 발명의 연마 조성물은 연마동안 연마 패드에 부착될 수 있는 부산물의 겔화를 효과적으로 감소시키고, 연마 속도를 증가시키고, 연마 질을 유지하고, 연마 패드의 변색을 지연시키고, 연마 패드의 성능 및 수명을 향상시키기 위해 웨이퍼를 일차 연마하는데 이용된다.The polishing composition of the present invention effectively reduces the gelation of by-products that may adhere to the polishing pad during polishing, increases the polishing rate, maintains the polishing quality, delays discoloration of the polishing pad, and improves the performance and life of the polishing pad. It is used to first polish the wafer to improve it.
바람직한 구체예의 상세한 설명DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
이하, 특정 실시예가 본 발명을 설명하기 위해 기술된다. 당업자들이라면 본 발명의 그밖의 다른 이점 및 효과를 용이하게 구상할 수 있을 것이다.Hereinafter, specific embodiments are described to illustrate the present invention. Those skilled in the art will be able to readily envision other advantages and effects of the present invention.
본 발명은 웨이퍼의 일차 연마를 위한 연마 조성물을 제공한다. 연마 조성물은 각각 평균 직경이 5 내지 150 nm인 연마 입자; pKa 값이 9 내지 10의 범위이고 양이 연마 입자의 7 내지 28 wt%인 pH 안정화제; 연마 촉진제; 및 물을 포함한다.The present invention provides a polishing composition for primary polishing of a wafer. The polishing compositions each comprise abrasive particles having an average diameter of 5 to 150 nm; a pH stabilizer having a pKa value in the range of 9 to 10 and an amount of 7 to 28 wt% of the abrasive particles; Polishing accelerators; And water.
본 발명의 연마 입자는 SiO2, Al2O3, TiO2, CeO2 및 ZrO2로 구성된 그룹중에서 선택된 하나 이상이고, 직경이 작아서 연마 속도를 증가시킨다.The abrasive particles of the present invention are SiO 2 , Al 2 O 3 , TiO 2 , CeO 2 and It is at least one selected from the group consisting of ZrO 2 , and the diameter is small to increase the polishing rate.
본 발명의 연마 조성물중에, pH 안정화제는 pKa 값 범위가 9 내지 10인 알칸올아민, 무기산 및 유기산으로 구성된 그룹중에서 선택된 하나 이상이다. 알칸올아민은 모노에탄올아민(pKa = 9.50), 디에탄올아민(pKa = 9.93) 및 트리에탄올아민(pKa = 9.8)으로 구성된 그룹중에서 선택된 하나 이상이다. 무기산은 붕산(pKa = 9.23)일 수 있다. 본 발명의 연마 조성물중에, pH 안정화제는 웨이퍼의 일차 연마동안 연마 조성물의 pH 값을 9 내지 10.5가 되도록 유지함으로써 국소 환경의 pH 값이 상당히 변화되는 것을 방지할 목적으로 사용된다. 따라서, 본 발명의 연마 조성물은 연마동안 연마 패드에 부착될 수 있는 부산물의 겔화를 효과적으로 감소시키고, 연마 속도를 증가시키고, 연마 질을 유지하고, 연마 패드의 변색을 지연시키고, 연마 패드의 성능 및 수명을 향상시킨다.In the polishing composition of the present invention, the pH stabilizer is at least one selected from the group consisting of alkanolamines, inorganic acids and organic acids having a pKa value ranging from 9 to 10. The alkanolamine is at least one selected from the group consisting of monoethanolamine (pKa = 9.50), diethanolamine (pKa = 9.93) and triethanolamine (pKa = 9.8). The inorganic acid may be boric acid (pKa = 9.23). In the polishing composition of the present invention, the pH stabilizer is used for the purpose of preventing the pH value of the local environment from being significantly changed by maintaining the pH value of the polishing composition to be 9 to 10.5 during the primary polishing of the wafer. Thus, the polishing composition of the present invention effectively reduces the gelation of by-products that may adhere to the polishing pad during polishing, increases the polishing rate, maintains the polishing quality, retards discoloration of the polishing pad, Improves life.
또한, 연마 속도를 증가시킬 목적으로, 본 발명의 연마 조성물은 피페라진, 피페라진 염, 테트라메틸암모늄 하이드록사이드 및 테트라메틸암모늄 하이드록사이드 염으로 구성된 그룹중에서 선택된 하나 이상의 연마 촉진제를 포함하며, 연마 촉진제의 양은 연마 입자의 11 내지 35 wt%이다.In addition, for the purpose of increasing the polishing rate, the polishing composition of the present invention comprises at least one polishing promoter selected from the group consisting of piperazine, piperazine salt, tetramethylammonium hydroxide and tetramethylammonium hydroxide salt, The amount of polishing promoter is 11 to 35 wt% of the abrasive particles.
연마 조성물은 수산화나트륨, 수산화칼륨, 황산, 염산 또는 인산인 pH 조절제를 추가로 포함하고, pH 조절제는 연마 조성물의 pH 값을 약 10 부근이 되도록 조정하기 위해서 임의로 사용된다.The polishing composition further includes a pH adjuster that is sodium hydroxide, potassium hydroxide, sulfuric acid, hydrochloric acid, or phosphoric acid, and the pH adjuster is optionally used to adjust the pH value of the polishing composition to about 10.
일 구체예로, 본 발명의 연마 조성물은 킬레이트제 및 계면활성제를 더 포함하며, 킬레이트제의 양은 연마 입자의 5.9 내지 20 wt%이고, 계면활성제의 양은 연마 입자의 0.16 내지 0.18 wt%이다. 일 구체예에 있어서, 소듐 니트릴로트리아세테이트가 킬레이트제로 사용된다. 니트릴로트리아세트산도 물론 킬레이트제로 사용될 수 있다.In one embodiment, the polishing composition of the present invention further comprises a chelating agent and a surfactant, the amount of the chelating agent is 5.9 to 20 wt% of the abrasive particles, the amount of the surfactant is 0.16 to 0.18 wt% of the abrasive particles. In one embodiment, sodium nitrilotriacetate is used as the chelating agent. Nitrilotriacetic acid can of course also be used as a chelating agent.
이하, 바람직한 구체예가 본 발명의 특징 및 효과를 설명하기 위해 기술되나, 본 발명의 영역을 한정하지는 않는다.
Preferred embodiments are described below to illustrate the features and effects of the invention, but do not limit the scope of the invention.
구체예Concrete example
웨이퍼의 일차 연마용 연마 조성물의 제조Preparation of Polishing Composition for Primary Polishing of Wafers
표 1에 있는 구체예 및 비교 및 실시예의 연마 조성물을 다음과 같은 단계로 제조하였다.The polishing compositions of the Examples and Comparative and Examples in Table 1 were prepared in the following steps.
순수한 물 또는 탈이온수를 용기에 가한 뒤, 연마 촉진제 및 pH 안정화제를 가하고, pH 조절제를 임의로 가하여 pH 값을 약 10으로 조정하였다. 그밖에, 킬레이트제 및 계면활성제를 임의로 가한 다음, 연마 입자를 가하였다. 특히, 다음 성분을 가하기 전에 각 성분을 혼합물로 잘 혼합하였다.Pure water or deionized water was added to the vessel, followed by the addition of a polishing accelerator and pH stabilizer, and the pH value adjusted to about 10 with the addition of a pH adjuster. In addition, chelating agents and surfactants were optionally added, followed by addition of abrasive particles. In particular, each component was well mixed into the mixture before the next component was added.
시험exam
상기 제조된 연마 조성물을 웨이퍼 연마에 사용하였다.The polishing composition prepared above was used for wafer polishing.
6 인치 웨이퍼 연마용 연마 패드(SUBA600)를 구비한 연마기(SECULAR XJ-36)를 이용하였다. 연마기는 4개의 연마 헤드를 갖추었으며, 각 연마 헤드는 3개의 6 인치 웨이퍼를 가질 수 있다. 연마동안, 연마기의 캐리 플레이트(carry plate) 온도는 31 내지 34 ℃, 회전 속도는 50 rpm, 연마 헤드 압력은 0.12 Mpa, 연마 조성물의 유속은 8 L/분이었다. 연마동안, 웨이퍼의 두께 변화를 매 시간 기록하고, 연마 패드의 색깔을 매 시간 관찰하였다. 연마 패드가 황갈색으로 변하면, 연마 패드의 수명이 끝난 것으로 본다. 연마 패드의 수명이 끝날 때까지 연마 조성물은 계속해서 재순환되었다.A polishing machine (SECULAR XJ-36) equipped with a 6 inch wafer polishing polishing pad (SUBA600) was used. The polisher was equipped with four polishing heads, each of which could have three 6 inch wafers. During polishing, the carry plate temperature of the polishing machine was 31 to 34 ° C., the rotation speed was 50 rpm, the polishing head pressure was 0.12 Mpa, and the flow rate of the polishing composition was 8 L / min. During polishing, the thickness change of the wafer was recorded every hour and the color of the polishing pad was observed every hour. When the polishing pad turns yellowish brown, the life of the polishing pad is considered to be over. The polishing composition continued to recycle until the end of the life of the polishing pad.
본 발명에서, 연마 속도 감소는 하기 식에 준해서 계산되었다:In the present invention, the polishing rate reduction was calculated according to the following formula:
연마 속도 감소 = [(A-B/A)]*100%Polishing rate reduction = [(A-B / A)] * 100%
상기 식에서,Where
A는 처음 시간에서의 연마 속도이고,A is the polishing rate at the first time,
B는 마지막 시간에서의 연마 속도이다.B is the polishing rate at the last time.
연마 제거량은 연마에 의해 제거된 웨이퍼 두께의 총량이다.The polishing removal amount is the total amount of the wafer thicknesses removed by polishing.
TMAH: 테트라메틸암모늄 하이드록사이드TMAH: Tetramethylammonium Hydroxide
NTA: 니트릴로트리아세테이트NTA: Nitrilotriacetate
DP7530: PO/EO 공중합체DP7530: PO / EO Copolymer
SEQ7G: 음이온성 킬레이트제 분산물(TAIWAN SURFACTANT CORP.)SEQ7G: Anionic Chelating Agent Dispersion (TAIWAN SURFACTANT CORP.)
pH 조절제: 연마 조성물의 pH 값이 약 10으로 조정되도록 임의 첨가.pH regulator: optional addition so that the pH value of the polishing composition is adjusted to about 10.
표 1에서, pH 안정화제, 연마 촉진제, pH 조절제, 킬레이트제 및 계면활성제의 각 양은 이산화규소의 양(100 중량부)을 기준으로 계산되었다.In Table 1, each amount of pH stabilizer, polishing accelerator, pH adjuster, chelating agent and surfactant was calculated based on the amount of silicon dioxide (100 parts by weight).
시험시, 연마 조성물을 물과 함께 첨가하여 사용될 고체 함량을 1 wt%로 조정하였다. 일반적으로, 연마 조성물의 고체 함량은 0.5 내지 20 wt% 이었다.In testing, the polishing composition was added with water to adjust the solids content to be used to 1 wt%. In general, the solids content of the polishing composition was 0.5 to 20 wt%.
표에 따르면, pH 안정화제를 함유하지 않는 연마 조성물을 사용한 경우 연마 속도 감소가 심각하였다; 그러나, 연마 질을 유지하고, 웨이퍼 두께를 더 제거하기 위해 pH 안정화제를 함유하는 연마 조성물을 사용하게 되면 연마 속도 감소가 상당히 줄어든다. 따라서, 본 발명의 연마 조성물은 연마 패드의 수명을 상당히 향상시켰다.According to the table, the polishing rate reduction was severe when using the polishing composition containing no pH stabilizer; However, the use of polishing compositions containing pH stabilizers to maintain polishing quality and further remove wafer thickness reduces significantly the polishing rate reduction. Thus, the polishing composition of the present invention significantly improved the life of the polishing pad.
본 발명이 예시적인 바람직한 구체예를 들어 설명되었으나, 본 발명의 영역이 기재된 내용으로 제한되지는 않는 것으로 이해하여야 한다. 따라서, 본 발명의 영역은 모든 변형 및 유사 기술을 포함하도록 가장 넓게 해석되어야 한다.While the invention has been described with reference to exemplary preferred embodiments, it is to be understood that the scope of the invention is not limited to the described content. Accordingly, the scope of the present invention should be construed broadly to encompass all modifications and similar techniques.
Claims (8)
pKa 값이 9 내지 10의 범위이고 양이 연마 입자의 7 내지 28 wt%인 pH 안정화제;
연마 촉진제; 및
물
을 포함하는 웨이퍼의 일차 연마용 연마 조성물.Abrasive particles each having an average diameter of 5 to 150 nm;
a pH stabilizer having a pKa value in the range of 9 to 10 and an amount of 7 to 28 wt% of the abrasive particles;
Polishing accelerators; And
water
Polishing composition for primary polishing of a wafer comprising a.
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| CN102766408B (en) * | 2012-06-28 | 2014-05-28 | 深圳市力合材料有限公司 | Silicon wafer refined polishing composition liquid applicable to low pressure and preparation method thereof |
| US8795548B1 (en) * | 2013-04-11 | 2014-08-05 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Silicon wafer polishing composition and related methods |
| US8801959B1 (en) * | 2013-04-11 | 2014-08-12 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Stable, concentratable silicon wafer polishing composition and related methods |
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| KR100660767B1 (en) | 2005-05-23 | 2006-12-22 | 제일모직주식회사 | Chemical mechanical polishing slurry for polishing Poly-Silicon film and method for producing thereof |
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| US20080149884A1 (en) * | 2006-12-21 | 2008-06-26 | Junaid Ahmed Siddiqui | Method and slurry for tuning low-k versus copper removal rates during chemical mechanical polishing |
| JP2009231486A (en) * | 2008-03-21 | 2009-10-08 | Kao Corp | Polishing liquid composition for silicon wafer |
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