KR20120067701A - Slurry composition for chemical mechanical polishing and method for manufacturing semiconductor device by using the same - Google Patents

Abstract

PURPOSE: A chemical mechanical polishing slurry composition is provided to polish a silicon oxide film, a silicon nitride film, and a polysilicon film with polishing selectivity of 0.5-2.0. CONSTITUTION: A chemical mechanical polishing slurry composition comprises colloidal silica, oxalic acid, and solvent. The colloidal silica has the ratio of average particle size of primary particles to secondary particles is 1:1-1:1.5. The average particle diameter of primary particle is 10-100 nm. A manufacturing method of the semiconductor device comprises a step of polishing one layer selected from a group consisting of a silicon oxide layer, a silicon nitride layer, and a polysilicon layer, and combinations thereof by using the slurry composition.

Description

Slurry composition for chemical mechanical polishing and a method for manufacturing a semiconductor device using the same {SURRY COMPOSITION FOR CHEMICAL MECHANICAL POLISHING AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE BY USING THE SAME}

The present invention relates to a chemical mechanical polishing (CMP) slurry composition capable of polishing a silicon nitride film and a polysilicon film at a polishing selectivity of 0.5 to 2.0 with respect to a silicon oxide film, and a method of manufacturing a semiconductor device using the same.

In the chemical and mechanical polishing process, which is one of the surface planarization process methods, a wafer to be planarized is placed on a rotating plate, and the surface of the wafer is brought into contact with a pad of the polishing machine. The polishing process is carried out by rotating the pads of the rotating plate and the polishing machine together with the supply. That is, the slurry flows between the wafer surface and the pad, and polishing of the wafer surface is caused by mechanical friction caused by the abrasive particles in the slurry and the surface protrusions of the pad, and chemical removal is performed by chemical reaction between the chemical component in the slurry and the wafer surface. .

In general, there are various kinds of slurry depending on the type and characteristics of the object to be removed. Among them, a slurry for selectively removing a specific polished film is very diverse, but in recent years, a semiconductor mechanical structure requires a slurry composition for chemical mechanical polishing that can simultaneously polish a silicon oxide film, a silicon nitride film, and a polysilicon film.

However, in Japanese Patent Laid-Open No. 2004-00304651, fumed silica is used to non-selectively select a silicon oxide film, a silicon nitride film, and a polysilicon film. In the case of the Japanese Unexamined Patent Publication No. 2007-074537, when the pH of the polishing composition is 4 to 5, a desired polysilicon polishing rate can be obtained, but there is a problem in that agglomeration of colloidal silica occurs.

An object of the present invention is to provide a slurry composition for chemical mechanical polishing which can polish a silicon nitride film and a polysilicon film with a polishing selectivity of 0.5 to 2.0 compared to a silicon oxide film.

Another object of the present invention is to provide a method for manufacturing a semiconductor device using the slurry composition for chemical mechanical polishing.

In order to achieve the above object, the chemical mechanical polishing slurry composition according to an embodiment of the present invention comprises colloidal silica, oxalic acid and a solvent, the colloidal silica is the average particle diameter of the primary particles and the average of the secondary particles The particle size ratio is 1: 1 to 1: 1.5.

The chemical mechanical polishing slurry composition may have a polishing selectivity of the silicon nitride film and the polysilicon film with respect to the silicon oxide film, respectively, from 0.5 to 2.0.

The colloidal silica may have an average particle diameter of 10 to 100 nm of primary particles.

The chemical mechanical polishing slurry composition may include 0.5 to 6 wt% of the colloidal silica with respect to the entire chemical mechanical polishing slurry composition.

The chemical mechanical polishing slurry composition may include 0.2 to 5 wt% of the oxalic acid based on the entire chemical mechanical polishing slurry composition.

The chemical mechanical polishing slurry composition may further include second colloidal silica having different average particle diameters of the colloidal silica and the primary particles, and the second colloidal silica may have an average particle diameter of 10 to 10 primary particles. 100 nm and may be included in an amount of 0.5 to 6 wt% based on the total weight of the slurry composition for chemical mechanical polishing.

The chemical mechanical polishing slurry composition may further include a heterocyclic compound including two or more nitrogen atoms in an amount of 0.001 to 5% by weight based on the entirety of the chemical mechanical polishing slurry composition.

Heterocyclic compounds containing two or more nitrogen atoms are 1,2,4H-triazole, tetrazole, 5-aminotetrazole, imidazole, 1,2-dimethylimidazole, piperazine and combinations thereof It may be any one selected from the group consisting of.

The chemical mechanical polishing slurry composition may further include 0.001 to 5 wt% of a water-soluble polymer based on the entire chemical mechanical polishing slurry composition.

The water-soluble polymer may be any one selected from the group consisting of polyethylene glycol, polyvinyl alcohol, polyvinylpyrrolidone, polyacrylic acid, hydroxyethyl cellulose, and combinations thereof.

According to another aspect of the present invention, there is provided a method of manufacturing a semiconductor device, using the slurry composition for chemical mechanical polishing, polishing any one selected from the group consisting of a silicon oxide film, a silicon nitride film, a polysilicon film, and a combination thereof. It includes.

The chemical mechanical polishing slurry composition may non-selectively polish two films selected from the group consisting of a silicon oxide film, a silicon nitride film, and a polysilicon film.

Hereinafter, the present invention will be described in more detail.

Chemical mechanical polishing slurry composition according to an embodiment of the present invention comprises colloidal silica, oxalic acid and a solvent.

The colloidal silica has a ratio of the average particle diameter of the primary particles and the average particle diameter of the secondary particles (average particle diameter of the primary particles: average particle diameter of the secondary particles) is 1: 1 to 1: 1.5, preferably 1: 1 to 1: 1.3. The secondary particles mean particles formed by agglomeration of primary particles.

The ratio of the average particle diameter of the primary particles of the colloidal silica and the average particle diameter of the secondary particles may not be less than 1, and if the ratio exceeds 1.5, the polishing rate of the polysilicon film may be too high or too low to obtain a desired polishing selectivity. Can be.

The chemical mechanical polishing slurry composition may have a polishing selectivity of the silicon nitride film and the polysilicon film with respect to the silicon oxide film, respectively, from 0.5 to 2.0. The polishing selectivity of the silicon nitride film and the polysilicon film with respect to the silicon oxide film is a value obtained by dividing the polishing rate of the silicon nitride film or the polysilicon film by the polishing rate of the silicon oxide film.

If the polishing selectivity of the silicon nitride film and the polysilicon film with respect to the silicon oxide film is less than 0.5 or more than 2.0, it may be difficult to non-selectively polish the silicon nitride film and the polysilicon film with respect to the silicon oxide film.

That is, the chemical mechanical polishing slurry composition may simultaneously polish the silicon oxide film, the silicon nitride film, and the polysilicon film required for the semiconductor device structure when the polishing selectivity of the silicon nitride film and the polysilicon film is 0.5 to 2.0, respectively.

The colloidal silica may have an average particle diameter of the primary particles of 10 to 100 nm, preferably 20 to 75 nm. When the average particle diameter of the primary particles of the colloidal silica exceeds 100 nm, the secondary particles may become large particles and scratches may occur, and the desired polishing selectivity may not be obtained due to the low polishing rate of the silicon nitride film, and may be less than 10 nm. In this case, the desired polishing selectivity cannot be obtained due to the low polishing rate of the polysilicon film.

The chemical mechanical polishing slurry composition may include 0.5 to 6% by weight, preferably 1 to 6% by weight, and more preferably 2 to 5% by weight of the colloidal silica with respect to the entire chemical mechanical polishing slurry composition. Can be. When the content of the colloidal silica is less than 0.5% by weight, the polishing rate of the polished films may be too low, and when the content of the colloidal silica exceeds 6% by weight, the desired polishing selectivity may not be obtained.

The chemical mechanical polishing slurry composition may further include a second colloidal silica having an average particle diameter of the primary particles different from the colloidal silica with respect to the total weight of the chemical mechanical polishing slurry composition. When the colloidal silica having different average particle diameters of the primary particles is mixed, the polishing rate of the polysilicon film may be adjusted.

The second colloidal silica may have an average particle diameter of 10 to 100 nm, preferably 20 to 75 nm, and 0.5 to 6 wt%, preferably 1 to 1, based on the entire slurry composition for chemical mechanical polishing. 6 wt%, more preferably 2 to 5 wt%.

The oxalic acid may increase the polishing rate of the silicon oxide film of the slurry composition for chemical mechanical polishing. The chemical mechanical polishing slurry composition may include 0.2 to 5 wt%, preferably 0.2 to 4 wt%, more preferably 0.2 to 3 wt% of the oxalic acid based on the entire chemical mechanical polishing slurry composition. . If the content of oxalic acid is less than 0.2% by weight, the desired polishing selectivity cannot be obtained due to the low polishing rate of the silicon oxide film, and if it exceeds 5% by weight, the desired polishing selectivity cannot be obtained due to the high polishing rate of the silicon oxide film. .

The chemical mechanical polishing slurry composition may further include a heterocyclic compound including two or more nitrogen atoms in order to increase the polishing rate of the silicon nitride film.

Heterocyclic compounds containing two or more nitrogen atoms are 1,2,4H-triazole, tetrazole, 5-aminotetrazole, imidazole, 1,2-dimethylimidazole, piperazine and combinations thereof It may be any one selected from the group consisting of.

The heterocyclic compound including two or more nitrogen atoms may be included in an amount of 0.001 to 5% by weight, preferably 0.01 to 4% by weight, and more preferably 0.01 to 3% by weight, based on the entire chemical mechanical polishing slurry composition. have. When the content of the heterocyclic compound containing two or more nitrogen atoms is less than 0.001% by weight, the increase in polishing rate of the silicon nitride film is insufficient, so that the desired polishing selectivity cannot be obtained. This may cause stability problems.

The chemical mechanical polishing slurry composition may further include a water-soluble polymer to reduce defects of the polished film. The water-soluble polymer may be any one selected from the group consisting of polyethylene glycol, polyvinyl alcohol, polyvinylpyrrolidone, polyacrylic acid, hydroxyethyl cellulose, and combinations thereof.

The water-soluble polymer may include 0.001 to 5% by weight, preferably 0.01 to 5% by weight, and more preferably 0.01 to 2% by weight, based on the entire chemical mechanical polishing slurry composition. When the content of the water-soluble polymer is less than 0.001% by weight, the dispersion stability may be lowered. When the amount of the water-soluble polymer is higher than 5% by weight, the dispersibility may be reduced, and the polishing rate may be reduced.

The slurry for chemical mechanical polishing may have a pH of 2 to 4, preferably 2.5 to 4. If the pH of the chemical mechanical polishing slurry composition is less than 2, the polishing rate is decreased to obtain a desired polishing selectivity. If the pH is more than 4, stability may occur due to aggregation of the slurry during long-term storage.

For the pH control of the chemical mechanical polishing slurry composition, KOH, NH ₄ OH, NaOH, TMAH, or TBAH may be used as the basic material. As the acidic material, inorganic acids such as nitric acid, sulfuric acid, or hydrochloric acid may be used alone or in combination. Can be used.

The solvent included in the chemical mechanical polishing slurry composition may be used as long as it is used in the chemical mechanical polishing slurry composition. For example, deionized water may be used, but the present invention is not limited thereto. In addition, the content of the solvent other than the content of the colloidal silica, oxalic acid, the second colloidal silica, a heterocyclic compound or a water-soluble polymer containing two or more nitrogen atoms with respect to the entire chemical mechanical polishing slurry composition to be.

According to another embodiment of the present invention, a method of manufacturing a semiconductor device may include polishing any one selected from the group consisting of a silicon oxide film, a silicon nitride film, a polysilicon film, and a combination thereof using the slurry for chemical mechanical polishing. Include. The method for manufacturing a semiconductor device by polishing a silicon oxide film, a silicon nitride film or a polysilicon film using a slurry composition for chemical mechanical polishing can be used as long as it is a polishing method generally used in the prior art and is not particularly limited in the present invention. Therefore, in this specification, the specific method, conditions, etc. are abbreviate | omitted.

In addition, the chemical mechanical polishing slurry composition may non-selectively polish two films selected from the group consisting of a silicon oxide film, a silicon nitride film, and a polysilicon film.

In the slurry composition for chemical mechanical polishing according to an embodiment of the present invention, the silicon nitride film and the polysilicon film may be chemically mechanically polished at a polishing selectivity of 0.5 to 2.0 compared to the silicon oxide film.

1 is a photograph showing the surface of a polysilicon film before polishing in Experimental Example 6 of the present invention.
2 is a photograph showing the surface of a polysilicon film after polishing in Experimental Example 6 of the present invention.

Hereinafter, embodiments of the present invention will be described in detail so that those skilled in the art can easily practice the present invention. The present invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein.

In the following experimental examples, the polishing equipment was poly 400 (Poli 400, G & P Technology). The polishing conditions were platen speed of 93 rpm, carrier speed of 87 rpm, wafer pressure of 2 psi, slurry supply flow rate of 200 ml / min, and polishing time of 60 seconds. The polishing pad was subjected to polishing evaluation using IC1000 (Nitahas Co., Ltd.), and the silicon oxide film wafer used for polishing was 10,000cm thick 4cmX4cm PETEOS wafer, the silicon nitride film wafer was 2,000cm thick 4cmX4cm wafer, and the polysilicon film was used. As a wafer, a 4 cm x 4 cm wafer in which 1,000 m of silicon oxide film was deposited and 10,000 m of polysilicon was deposited thereon was used. KOH and HNO ₃ were used as a pH regulator. Each film thickness was measured by Spectra Thick 4000DLX (K-mac) and the roughness of the wafer surface was measured using XE-100 (AFM, Park system). The average particle size of the composition was measured by ELS 8000 (Otsuka Electronics).

Experimental Example 1: Polishing Characteristics According to the Ratio of the Average Particle Size of the Primary Particles of the Colloidal Silica to the Average Particle Size of the Secondary Particles

Colloidal silica and oxalic acid were added to the remaining amounts of deionized water in the amounts as summarized in Table 1 and mixed to prepare a slurry composition for chemical mechanical polishing.

In Comparative Example 1, a colloidal silica having a ratio of the average particle diameter of the primary particles of the colloidal silica and the average particle diameter of the secondary particles of 2.7 and the primary average particle diameter of 15 nm was used. In Comparative Example 2, the average of the primary particles was used. Colloidal silica having a particle size ratio of 1.7 to an average particle diameter and a primary average particle diameter of 70 nm was used. In Example 1, the colloidal ratio of the average particle diameter of the primary particles to the average particle diameter of the secondary particles was 1. Silica was used.

In addition, the polishing rate of the prepared chemical mechanical polishing slurry composition was measured, and the selectivity was calculated. The results are also shown in Table 1 below.

division Comparative Example 1 Comparative Example 2 Example 1 Ratio of the average particle diameter of primary particles of colloidal silica to the average particle diameter of secondary particles 1: 2.7 1: 1.7 1: 1 Colloidal silica (% by weight) 3.5 3.5 3.5 Oxalic Acid (% by weight) 0.6 0.6 0.6 Polishing Speed (Å / min) Silicon oxide film 245 369 217 Silicon nitride film 427 192 277 Polysilicon film 65 123 408 Polishing selectivity Silicon Nitride / Silicone Oxide 1.74 0.52 1.28 Polysilicon Film / Silicon Oxide Film 0.27 0.33 1.88

Referring to Table 1, in Comparative Examples 1 and 2, the ratio of the average particle diameter of the primary particles of the colloidal silica and the average particle diameter of the secondary particles deviated from 1: 1 to 1: 1.5, thereby increasing the silicon nitride film to the silicon oxide film. And it can be seen that the polishing selectivity of the polysilicon film deviates from 0.5 to 2.0, respectively.

On the other hand, in Example 1, the ratio of the average particle diameter of the primary particles of the colloidal silica and the average particle diameter of the secondary particles satisfies the range of 1: 1 to 1: 1.5, and the polishing of the silicon nitride film and the polysilicon film on the silicon oxide film It can be seen that the selectivity satisfies 0.5 to 2.0, respectively.

Experimental Example 2: Polishing Characteristics According to Oxalic Acid Content

As shown in Table 2, by using a colloidal silica having a ratio of the average particle diameter of the primary particles and the average particle diameter of the secondary particles of colloidal silica is 1 and the average particle diameter of the primary particles is 35 nm, the content of oxalic acid is changed. After mixing with deionized water, the pH was adjusted to 3.5 to prepare a slurry composition for chemical mechanical polishing.

In addition, the polishing rate of the prepared chemical mechanical polishing slurry composition was measured, and the selectivity was calculated. The results are also shown in Table 2 below.

Comparative Example 3 Example 2 Example 3 Example 1 Example 4 Colloidal silica (% by weight) 3.5 3.5 3.5 3.5 3.5 Oxalic Acid (% by weight) - 0.2 0.5 0.6 One Polishing Speed
(Å / min) Silicon oxide film 36 226 212 217 238 Silicon nitride film 314 256 349 277 269 Polysilicon film 330 251 358 408 316 grinding
Selectivity Silicon Nitride / Silicone Oxide 8.72 1.13 1.65 1.28 1.13 Polysilicon Film / Silicon Oxide Film 9.17 1.11 1.69 1.88 1.33

Referring to Table 2, as in Examples 1 to 4 it can be seen that the polishing selectivity is 0.5 to 2.0 when the content of oxalic acid is 0.2% by weight or more. On the other hand, in Comparative Example 3 without the addition of oxalic acid it can be seen that the silicon oxide film has a relatively low polishing rate to obtain the desired selectivity.

Experimental Example 3: Polishing Properties for Other Acids

As shown in Table 3 below, the ratio of the average particle diameter of the primary particles of the colloidal silica and the average particle diameter of the secondary particles is 1, using a colloidal silica having an average particle diameter of 35 nm, succinic acid in place of oxalic acid A slurry composition for chemical mechanical polishing having a pH of 3.5 containing glutaric acid and adipic acid, respectively was prepared.

In addition, the polishing rate of the prepared chemical mechanical polishing slurry composition was measured, and the selectivity was calculated. The results are also shown in Table 3 below.

Example 1 Comparative Example 4 Comparative Example 5 Comparative Example 6 Colloidal silica (% by weight) 3.5 3.5 3.5 3.5 Oxalic Acid (% by weight) 0.6 - - - Succinic Acid (wt%) - 0.3 - Glutaric acid (% by weight) - - 0.3 - Adipic acid (% by weight) - - - 0.6 grinding
speed
(Å / min) Silicon oxide film 217 92 65 104 Silicon nitride film 277 447 391 556 Polysilicon film 408 197 140 131 Selectivity Silicon Nitride /
Silicon oxide film 1.28 4.86 6.02 5.35 Polysilicon Film /
Silicon oxide film 1.88 2.14 2.15 1.26

Referring to Table 3, it can be seen that the desired selectivity ratio cannot be obtained in the case of the compositions to which succinic acid, glutaric acid or adipic acid are added instead of oxalic acid.

Experimental Example 4: Evaluation of Two Kinds of Colloidal Silica Mixing and Polishing with Different Sizes]

As shown in Table 4 below, the ratio of the average particle diameter of the primary particles of the colloidal silica to the average particle diameter of the secondary particles is 1.0 and the primary particles of the colloidal silica and the first colloidal silica having an average particle diameter of 35 nm A slurry composition for chemical mechanical polishing was prepared by mixing a second colloidal silica having a ratio of the average particle diameter of the secondary particles to the average particle diameter of 1.0 and the average particle diameter of the primary particles to 55 nm. At this time, the oxalic acid was adjusted to 0.6% by weight, pH 3.5.

In addition, the polishing rate of the prepared chemical mechanical polishing slurry composition was measured, and the selectivity was calculated. The results are also shown in Table 4 below.

Example 5 6 7 8 9 10 11 First colloidal silica (% by weight) 4 3 2.5 2 1.5 One - Secondary colloidal silica (% by weight) - One 1.5 2 2.5 3 4 grinding
speed
(Å / min) Silicon oxide film 277 304 237 229 311 295 328 Silicon nitride film 231 364 288 281 301 256 249 Polysilicon film 428 360 362 321 362 370 466 Selectivity Silicon Nitride /
Silicon oxide film 0.83 1.20 1.22 1.23 0.97 0.87 0.76 Polysilicon Film /
Silicon oxide film 1.55 1.18 1.53 1.40 1.16 1.25 1.42

Referring to Table 4, it can be seen that by mixing the colloidal silica having a different average particle diameter of the primary particles can adjust the polishing rate of the polysilicon film and can be adjusted to the desired selectivity.

Experimental Example 5: Polishing Characteristics by Addition of Heterocyclic Compounds Containing Two or More Nitrogen Atoms

As shown in Table 5, 5 to 3.5% by weight of colloidal silica and 0.6% by weight of oxalic acid, respectively, in which the ratio of the average particle diameter of the primary particles and the average particle diameter of the secondary particles of the colloidal silica was 1.0 and the average particle diameter of the primary particles was 35 nm. Preparation of slurry for chemical mechanical polishing with a pH of 3.5 comprising 0.1 wt% of -amino tetrazole, piperazine, 1,2,4H-triazole, tetrazole, imidazole and 1,2-dimethylimidazole It was.

The polishing selectivity was calculated by measuring the polishing rate of the prepared chemical mechanical polishing slurry composition, and the surface state of polysilicon was observed after polishing, and the results are shown in Table 5 below.

After polishing, the surface state of the polysilicon was observed by an optical microscope, and the evaluation was performed based on the following criteria.

○: No defect was observed on the wafer surface.

Δ: 1 or 2 defects observed on the wafer surface are observed.

X: Three or more defects which are a problem on the wafer surface are observed.

Example One 12 13 14 1,2,4H-triazole - 0.1 - - Tetrazole - - 0.1 - Imidazole - - - 0.1 Polishing Speed
(Å / min) Silicon oxide film 217 225 201 259 Silicon nitride film 277 310 298 282 Polysilicon film 408 337 305 231 Selectivity Silicon Nitride / Silicone Oxide 1.28 1.15 1.38 1.09 Polysilicon Film / Silicon Oxide Film 1.88 1.38 1.50 0.89 Polysilicon surface △ ○ ○ ○

Referring to Table 5, when the slurry composition for chemical mechanical polishing further includes a heterocyclic compound containing two or more nitrogen atoms, it is possible to reduce the occurrence of defects on the surface of the polysilicon and also to obtain various polishing selectivity. It can be seen that.

Experimental Example 6: Effect of Adding Water-Soluble Polymer

3.5% by weight of colloidal silica and 0.6% by weight of oxalic acid were mixed, and the pH was adjusted to 3.5. To prepare a slurry composition for the first chemical mechanical polishing. In addition, the second chemical mechanical polishing slurry composition was prepared by adding 3 wt% of polyethylene glycol, which is a water-soluble polymer, to the first chemical mechanical polishing slurry composition.

The surface roughness of the prepared slurry composition for the first and second chemical mechanical polishing was measured, and the results are shown in FIGS. 1, 2, and 6 below. In this case, R _a and R _q are representative parameters of surface roughness, R _a is the average deviation value (arithmetic mean) of peak and valley values from the center line in the surface roughness profile, and R _q is the root mean square The value calculated by

R _q (nm) R _a (nm) First slurry composition 0.842 0.662 Second slurry composition 0.237 0.182

Referring to FIGS. 1, 2, and 6, it can be seen that the value decreases when comparing R _q and R _a values before and after polishing. That is, it can be seen that there is an effect of reducing the defect of the polysilicon film when the water-soluble polymer is added.

Experimental Example 7: Stability Evaluation

A composition obtained by mixing 4% by weight of colloidal silica and 0.8% by weight of oxalic acid in deionized water, each having a ratio of the average particle diameter of the primary particles to the secondary particles of the colloidal silica of 1.0 and the average particle diameter of the primary particles of 35 nm, respectively. After adjusting to pH 3.5, 4.8 and 6.0, the average particle size was measured after 10 days and 20 days, and the results are shown in Table 7 below.

Example pH After manufacturing (nm) 10 days elapsed (nm) 20 days elapsed (nm) 15 3.5 54.1 53.2 57.2 16 4.8 51.4 110.2 272 17 6.0 58.8 1128.6 1706.9

Referring to Table 7, it can be seen that in the case of Examples 16 and 17 whose pH deviates from 2 to 4, the average particle diameter of colloidal silica increases gradually after 10 days or more.

Although the preferred embodiments of the present invention have been described in detail above, the scope of the present invention is not limited thereto, and various modifications and improvements of those skilled in the art using the basic concepts of the present invention defined in the following claims are also provided. It belongs to the scope of rights.

Claims (12)

Colloidal silica, oxalic acid and a solvent,
The colloidal silica is a chemical mechanical polishing slurry composition of the ratio of the average particle diameter of the primary particles and the average particle diameter of the secondary particles is 1: 1 to 1: 1.5. The method of claim 1,
The slurry for chemical mechanical polishing is a slurry composition for chemical mechanical polishing, wherein the polishing selectivity of the silicon nitride film and the polysilicon film is 0.5 to 2.0, respectively. The method of claim 1,
The colloidal silica is a chemical mechanical polishing slurry composition of which the average particle diameter of the primary particles is 10 to 100nm. The method of claim 1,
The chemical mechanical polishing slurry composition comprises 0.5 to 6% by weight of the colloidal silica with respect to the entire chemical mechanical polishing slurry composition. The method of claim 1,
The chemical mechanical polishing slurry composition comprises 0.2 to 5 wt% of the oxalic acid based on the entire chemical mechanical polishing slurry composition. The method of claim 1,
The chemical mechanical polishing slurry composition may further include a second colloidal silica having a different average particle diameter of the colloidal silica and the primary particles,
The second colloidal silica has an average particle diameter of the primary particles of 10 to 100nm, 0.5 to 6% by weight based on the total weight of the chemical mechanical polishing slurry composition is a chemical mechanical polishing slurry composition. The method of claim 1,
The chemical mechanical polishing slurry composition further comprises a 0.001 to 5% by weight of a heterocyclic compound containing two or more nitrogen atoms relative to the entire chemical mechanical polishing slurry composition. The method of claim 8,
Heterocyclic compounds containing two or more nitrogen atoms are 1,2,4H-triazole, tetrazole, 5-aminotetrazole, imidazole, 1,2-dimethylimidazole, piperazine and combinations thereof Slurry composition for chemical mechanical polishing is any one selected from the group consisting of. The method of claim 1,
The chemical mechanical polishing slurry composition further comprises 0.001 to 5% by weight of a water-soluble polymer relative to the entire chemical mechanical polishing slurry composition. 10. The method of claim 9,
The water-soluble polymer is any one selected from the group consisting of polyethylene glycol, polyvinyl alcohol, polyvinylpyrrolidone, polyacrylic acid, hydroxyethyl cellulose and combinations thereof. Comprising the polishing of any one selected from the group consisting of silicon oxide film, silicon nitride film, polysilicon film, and combinations thereof using the slurry for chemical mechanical polishing according to any one of claims 1 to 10. Method of manufacturing a semiconductor device. The method of claim 11,
The chemical mechanical polishing slurry composition is a method for manufacturing a semiconductor device in which non-selective polishing of two films selected from the group consisting of a silicon oxide film, a silicon nitride film and a polysilicon film.

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