KR101186681B1 - P-LAYER OF A GaN BASED COMPOUND SEMICONDUCTOR AND METHOD OF FABRICATING THE SAME - Google Patents
P-LAYER OF A GaN BASED COMPOUND SEMICONDUCTOR AND METHOD OF FABRICATING THE SAME Download PDFInfo
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- KR101186681B1 KR101186681B1 KR20050093596A KR20050093596A KR101186681B1 KR 101186681 B1 KR101186681 B1 KR 101186681B1 KR 20050093596 A KR20050093596 A KR 20050093596A KR 20050093596 A KR20050093596 A KR 20050093596A KR 101186681 B1 KR101186681 B1 KR 101186681B1
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Abstract
A P layer of a gallium nitride (GaN) compound semiconductor and a method of manufacturing the same are disclosed. The P layer of the GaN compound semiconductor is grown while supplying gas to the growth chamber and then stops supply of gas, and removes all gases present in the growth chamber at a temperature higher than the temperature at which the P-type impurities and hydrogen are initiated. After release, the temperature is lowered to form. According to this, the P layer conductivity can be secured without performing the annealing process.
Compound Semiconductor, P Layer, Annealing, Light Emitting Diode (LED)
Description
1 is a flowchart illustrating a P layer manufacturing method of a conventional gallium nitride (GaN) -based compound semiconductor;
2 is a perspective view of a GaN compound semiconductor including a P layer according to a preferred embodiment of the present invention;
3 is a longitudinal cross-sectional view of FIG.
4 is a flowchart of a P layer manufacturing method of a GaN compound semiconductor according to the present invention; and
5 is a GaN compound semiconductor of another embodiment having a P layer of the present invention.
* Description of the major symbols in the drawings *
1, 41: GaN compound semiconductor, 11: substrate,
12: buffer layer, 13: N layer,
15: active layer, 17: P layer,
25: compound semiconductor layer, 31: electrode
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a gallium nitride (GaN) compound semiconductor and a method for manufacturing the same, and more particularly, to a P layer.
The GaN compound semiconductor may be applied to, for example, a light emitting diode (LED) or a laser diode (LD). In such a GaN compound semiconductor, an N layer, an active layer, and a P layer are generally formed sequentially on a substrate (see FIGS. 2 and 3, which are described as preferred embodiments of the present invention). A portion of the P layer, the active layer, and the N layer is partially etched, whereby a portion of the N layer is exposed to the outside. Electrodes are formed in the P layer and the N layer, respectively.
1 is a flowchart illustrating a method of manufacturing a P layer of such a GaN compound semiconductor. Referring to this figure, the P layer of the compound semiconductor is grown with a growth gas containing P-type impurities (P1). When the P layer is grown, the temperature is lowered (P2) and then drawn out (P3). Then, annealing is performed at a temperature of 400 ° C. or higher (P4). P-type impurities, for example, magnesium (Mg) are easily combined with hydrogen (H) present in the growth chamber, thus failing to function as free holes. Therefore, in GaN compound semiconductors, a separate annealing process is usually accompanied to separate the bond between the P-type impurity and hydrogen. Annealing removes hydrogen bonded to the P-type impurity, thereby providing a GaN compound semiconductor having a low resistance value and uniformity.
However, in the conventional GaN-based compound semiconductor, the annealing process for securing the conductivity of the P layer is cumbersome, and there is a problem that a separate equipment and time are necessary for this. The annealing process delays the manufacturing time of the product, and in particular, increases the investment cost for the manufacturing equipment, which requires the purchase of expensive equipment and entails a space for equipment installation, thereby increasing the cost of the product. .
The present invention has been made to solve such a conventional problem, and an object of the present invention is to provide a GaN compound semiconductor and a method for manufacturing the same, which can secure P layer conductivity without performing an annealing process.
Still another object of the present invention is to provide a GaN compound semiconductor and a method of manufacturing the same, which can be manufactured simply and conveniently without an annealing process and are inexpensive to invest in equipment.
According to the present invention, the step of maintaining the temperature in the growth chamber to the P layer growth temperature of the GaN compound semiconductor and supplying gas to form a P layer; Stopping the supply of the gas when the P layer is formed; Releasing all the gases present in the growth chamber at a temperature higher than a temperature at which impurities in the P layer and hydrogen contained in the gas start to bond; And lowering a P layer temperature of the GaN compound semiconductor.
Here, the temperature of the P layer can be lowered by air cooling or water cooling, or forming a vacuum in the growth chamber; And filling a cooling gas into the growth chamber.
In this case, the growth temperature of the P layer is preferably 600 ° C. or higher, and on the other hand, the gases present in the growth chamber are more preferably discharged at a temperature of 400 ° C. or higher.
On the other hand, according to another field of the present invention, in the P layer of the GaN-based compound semiconductor, after growing while supplying gas to the growth chamber, the supply of the growth gas is stopped, and the combination of the P-type impurities and hydrogen The gas may be achieved by the P layer of the GaN compound semiconductor formed by lowering the temperature after releasing all the gases present in the growth chamber at a temperature higher than the starting temperature.
Hereinafter, with reference to the accompanying drawings will be described in detail the GaN compound semiconductor of the present invention and its manufacturing method.
2 is a perspective view of a GaN compound semiconductor having a P layer according to an exemplary embodiment of the present invention, and FIG. 3 is a longitudinal cross-sectional view of FIG. 2. As can be seen from these figures, the GaN compound semiconductor 1 is a GaN
The
The GaN
The
The
The
On the other hand, in the GaN compound semiconductor layer 21 grown on the
The
The
On the other hand, the
Hereinafter, a method of manufacturing the GaN compound semiconductor of the present invention will be described.
4 is a flowchart illustrating a P layer manufacturing method of a GaN compound semiconductor according to the present invention. Although not mentioned in the present flowchart, the
After forming the
An important technical feature of the present invention is to provide conditions and conditions in which the P-type impurity and hydrogen cannot bind in the growth chamber. In the growth chamber, epi growth is performed at a high temperature of, for example, 500 ° C. or more, in which P-type impurities and hydrogen cannot be bonded. In the present invention, the
After the gas in the growth chamber is completely discharged (S4), the heating is stopped (S5) to lower the temperature of the
When the temperature of the substrate and the GaN compound semiconductor layer is sufficiently low (S7), the substrate and the GaN compound semiconductor layer are taken out in the growth chamber (S8). Then, since an impurity and hydrogen are not combined in the P layer, a separate annealing process is not necessary. In this case, the impurities in the P layer can contribute to the formation of free holes as they are, and therefore, it is possible to provide a product having excellent properties that provides low resistance.
After forming the P layer of the GaN-based compound semiconductor, an electrode formation process (not shown) is performed to fabricate individual devices as shown in FIGS. 2 and 3. In the electrode forming step, the
5 is a longitudinal cross-sectional view of a GaN compound semiconductor including a P layer according to another embodiment of the present invention. In the
Even in this configuration, the
In FIG. 5, the embodiment in which the
As described above, according to the present invention, a P layer of a GaN compound semiconductor and a method for manufacturing the same can be secured sufficiently without performing an annealing process. In the present invention, since the annealing process can be eliminated as described above, the GaN compound semiconductor can be produced simply and conveniently, and the facility investment is also very low.
Claims (7)
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR20050093596A KR101186681B1 (en) | 2005-10-05 | 2005-10-05 | P-LAYER OF A GaN BASED COMPOUND SEMICONDUCTOR AND METHOD OF FABRICATING THE SAME |
PCT/KR2005/003850 WO2007040295A1 (en) | 2005-10-04 | 2005-11-14 | (al, ga, in)n-based compound semiconductor and method of fabricating the same |
TW095100305A TWI389335B (en) | 2005-10-04 | 2006-01-04 | (al, ga, in)n-based compound semiconductor and method of fabricating the same |
US11/338,008 US20070074651A1 (en) | 2005-10-04 | 2006-01-24 | (Al, Ga, In) N-based compound semiconductor and method of fabricating the same |
JP2006017614A JP2007103894A (en) | 2005-10-04 | 2006-01-26 | (Al, Ga, In) N COMPOUND SEMICONDUCTOR AND ITS MANUFACTURE |
EP20060002155 EP1772909B1 (en) | 2005-10-04 | 2006-02-02 | (AI,Ga,In)N-Based compound semiconductor and method of fabricating the same |
US12/132,760 US8906159B2 (en) | 2005-10-04 | 2008-06-04 | (Al, Ga, In)N-based compound semiconductor and method of fabricating the same |
US12/502,513 US20090278234A1 (en) | 2005-10-04 | 2009-07-14 | (Al, Ga, In)N-BASED COMPOUND SEMICONDUCTOR AND METHOD OF FABRICATING THE SAME |
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KR20050093596A KR101186681B1 (en) | 2005-10-05 | 2005-10-05 | P-LAYER OF A GaN BASED COMPOUND SEMICONDUCTOR AND METHOD OF FABRICATING THE SAME |
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KR20070038360A KR20070038360A (en) | 2007-04-10 |
KR101186681B1 true KR101186681B1 (en) | 2012-09-28 |
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US10391640B1 (en) | 2018-09-11 | 2019-08-27 | Kawasaki Jukogyo Kabushiki Kaisha | Robot |
Citations (3)
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JP2002270895A (en) * | 2001-03-09 | 2002-09-20 | Hitachi Cable Ltd | Method for manufacturing p-type nitride compound semiconductor and semiconductor wafer, and semiconductor device |
JP2003031845A (en) * | 2001-04-30 | 2003-01-31 | Lumileds Lighting Us Llc | Formation of low-resistivity p-type gallium nitride |
JP2003110141A (en) * | 2001-09-27 | 2003-04-11 | Toshiaki Sakaida | Method for manufacturing gallium nitride-based compound semiconductor |
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- 2005-10-05 KR KR20050093596A patent/KR101186681B1/en active IP Right Grant
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002270895A (en) * | 2001-03-09 | 2002-09-20 | Hitachi Cable Ltd | Method for manufacturing p-type nitride compound semiconductor and semiconductor wafer, and semiconductor device |
JP2003031845A (en) * | 2001-04-30 | 2003-01-31 | Lumileds Lighting Us Llc | Formation of low-resistivity p-type gallium nitride |
JP2003110141A (en) * | 2001-09-27 | 2003-04-11 | Toshiaki Sakaida | Method for manufacturing gallium nitride-based compound semiconductor |
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