KR101186681B1 - P-LAYER OF A GaN BASED COMPOUND SEMICONDUCTOR AND METHOD OF FABRICATING THE SAME - Google Patents

P-LAYER OF A GaN BASED COMPOUND SEMICONDUCTOR AND METHOD OF FABRICATING THE SAME Download PDF

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KR101186681B1
KR101186681B1 KR20050093596A KR20050093596A KR101186681B1 KR 101186681 B1 KR101186681 B1 KR 101186681B1 KR 20050093596 A KR20050093596 A KR 20050093596A KR 20050093596 A KR20050093596 A KR 20050093596A KR 101186681 B1 KR101186681 B1 KR 101186681B1
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South Korea
Prior art keywords
layer
compound semiconductor
temperature
growth chamber
gan compound
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KR20050093596A
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Korean (ko)
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KR20070038360A (en
Inventor
이정훈
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서울옵토디바이스주식회사
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Priority to KR20050093596A priority Critical patent/KR101186681B1/en
Priority to PCT/KR2005/003850 priority patent/WO2007040295A1/en
Priority to TW095100305A priority patent/TWI389335B/en
Priority to US11/338,008 priority patent/US20070074651A1/en
Priority to JP2006017614A priority patent/JP2007103894A/en
Priority to EP20060002155 priority patent/EP1772909B1/en
Publication of KR20070038360A publication Critical patent/KR20070038360A/en
Priority to US12/132,760 priority patent/US8906159B2/en
Priority to US12/502,513 priority patent/US20090278234A1/en
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Publication of KR101186681B1 publication Critical patent/KR101186681B1/en

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Abstract

A P layer of a gallium nitride (GaN) compound semiconductor and a method of manufacturing the same are disclosed. The P layer of the GaN compound semiconductor is grown while supplying gas to the growth chamber and then stops supply of gas, and removes all gases present in the growth chamber at a temperature higher than the temperature at which the P-type impurities and hydrogen are initiated. After release, the temperature is lowered to form. According to this, the P layer conductivity can be secured without performing the annealing process.

Compound Semiconductor, P Layer, Annealing, Light Emitting Diode (LED)

Description

P layer of gallium nitride compound semiconductor and its formation method {P-LAYER OF A GaN BASED COMPOUND SEMICONDUCTOR AND METHOD OF FABRICATING THE SAME}

1 is a flowchart illustrating a P layer manufacturing method of a conventional gallium nitride (GaN) -based compound semiconductor;

2 is a perspective view of a GaN compound semiconductor including a P layer according to a preferred embodiment of the present invention;

3 is a longitudinal cross-sectional view of FIG.

4 is a flowchart of a P layer manufacturing method of a GaN compound semiconductor according to the present invention; and

5 is a GaN compound semiconductor of another embodiment having a P layer of the present invention.

* Description of the major symbols in the drawings *

1, 41: GaN compound semiconductor, 11: substrate,

12: buffer layer, 13: N layer,

15: active layer, 17: P layer,

25: compound semiconductor layer, 31: electrode

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a gallium nitride (GaN) compound semiconductor and a method for manufacturing the same, and more particularly, to a P layer.

The GaN compound semiconductor may be applied to, for example, a light emitting diode (LED) or a laser diode (LD). In such a GaN compound semiconductor, an N layer, an active layer, and a P layer are generally formed sequentially on a substrate (see FIGS. 2 and 3, which are described as preferred embodiments of the present invention). A portion of the P layer, the active layer, and the N layer is partially etched, whereby a portion of the N layer is exposed to the outside. Electrodes are formed in the P layer and the N layer, respectively.

1 is a flowchart illustrating a method of manufacturing a P layer of such a GaN compound semiconductor. Referring to this figure, the P layer of the compound semiconductor is grown with a growth gas containing P-type impurities (P1). When the P layer is grown, the temperature is lowered (P2) and then drawn out (P3). Then, annealing is performed at a temperature of 400 ° C. or higher (P4). P-type impurities, for example, magnesium (Mg) are easily combined with hydrogen (H) present in the growth chamber, thus failing to function as free holes. Therefore, in GaN compound semiconductors, a separate annealing process is usually accompanied to separate the bond between the P-type impurity and hydrogen. Annealing removes hydrogen bonded to the P-type impurity, thereby providing a GaN compound semiconductor having a low resistance value and uniformity.

However, in the conventional GaN-based compound semiconductor, the annealing process for securing the conductivity of the P layer is cumbersome, and there is a problem that a separate equipment and time are necessary for this. The annealing process delays the manufacturing time of the product, and in particular, increases the investment cost for the manufacturing equipment, which requires the purchase of expensive equipment and entails a space for equipment installation, thereby increasing the cost of the product. .

The present invention has been made to solve such a conventional problem, and an object of the present invention is to provide a GaN compound semiconductor and a method for manufacturing the same, which can secure P layer conductivity without performing an annealing process.

Still another object of the present invention is to provide a GaN compound semiconductor and a method of manufacturing the same, which can be manufactured simply and conveniently without an annealing process and are inexpensive to invest in equipment.

According to the present invention, the step of maintaining the temperature in the growth chamber to the P layer growth temperature of the GaN compound semiconductor and supplying gas to form a P layer; Stopping the supply of the gas when the P layer is formed; Releasing all the gases present in the growth chamber at a temperature higher than a temperature at which impurities in the P layer and hydrogen contained in the gas start to bond; And lowering a P layer temperature of the GaN compound semiconductor.

Here, the temperature of the P layer can be lowered by air cooling or water cooling, or forming a vacuum in the growth chamber; And filling a cooling gas into the growth chamber.

In this case, the growth temperature of the P layer is preferably 600 ° C. or higher, and on the other hand, the gases present in the growth chamber are more preferably discharged at a temperature of 400 ° C. or higher.

On the other hand, according to another field of the present invention, in the P layer of the GaN-based compound semiconductor, after growing while supplying gas to the growth chamber, the supply of the growth gas is stopped, and the combination of the P-type impurities and hydrogen The gas may be achieved by the P layer of the GaN compound semiconductor formed by lowering the temperature after releasing all the gases present in the growth chamber at a temperature higher than the starting temperature.

Hereinafter, with reference to the accompanying drawings will be described in detail the GaN compound semiconductor of the present invention and its manufacturing method.

2 is a perspective view of a GaN compound semiconductor having a P layer according to an exemplary embodiment of the present invention, and FIG. 3 is a longitudinal cross-sectional view of FIG. 2. As can be seen from these figures, the GaN compound semiconductor 1 is a GaN compound semiconductor layer 25 grown on a substrate 11, a substrate 11, and a GaN compound semiconductor layer 25. Electrodes 31 and 35 formed therein. Here, the electrode 33 is a portion for electrical connection with the outside.

The substrate 11 may use sapphire of an insulating material, and a conductive or semiconductor substrate such as metal, Si, SiC, or GaN may be used. Since conductive or semiconductor substrates have better thermal conductivity than sapphire substrates, they have recently been used in GaN compound semiconductor products that require high power. It will be described later in detail with reference to FIG.

The GaN compound semiconductor layer 25 includes a buffer layer 12, an N layer 13 doped with N-type impurities, a P layer 17 doped with P-type impurities, and an active layer provided between the N and P layers. Include (15). The buffer layer 12 is formed to a certain thickness on the substrate 11 to reduce the lattice mismatch between the substrate 11 and the N layer 13. The buffer layer may be made of AlN, InGaN, GaN, AlGaN, or the like.

The N layer 13 can be formed without doping impurities, but is preferably formed by doping impurities such as Si, Ge, Se, S, or Te. For example, it is preferable that the N layer 13 which can be manufactured by the thickness of 0.5 micrometer-10 micrometers is comprised from GaN. The N layer 13 may have a structure in which GaN containing impurities and GaN not containing impurities are alternately stacked. The lamination number is appropriately selectable.

The active layer 15 may be configured as a quantum well (QW) structure or a multi quantum well (MQW) structure including GaN based on InGaN. A change in output is expected based on the number or thickness of InGaN and GaN stacked. Therefore, it is important to set the appropriate stacking number and thickness to the best.

The P layer 17 is formed by doping P-type impurities. As the P-type impurity, Be, St, Ba, Zn or Mg can be used, but Mg is mainly used. In the present invention, as will be described in detail later with reference to FIG. 4 illustrating the manufacturing method, the phenomenon of bonding of hydrogen and impurities generated in the P layer 17 is prevented in advance, and impurities can contribute to the generation of free holes as they are.

On the other hand, in the GaN compound semiconductor layer 21 grown on the substrate 11, part of the N layer 13 is partially etched by partially etching the P layer 17, the active layer 15, and the N layer 13. Is exposed to the outside. The P layer 17 is provided with a thin electrode 31, and the N layer 13 is provided with an electrode 35. The electrode 31 of the P layer 17 is preferably formed of a transparent electrode in order to efficiently emit light generated from the active layer 15 to the outside.

The transparent electrode 31 of the P layer 17 is formed of at least one material selected from the group of Pt, Pd and Au or alloys thereof. For example, Pt and Au or Pd and Au may be configured, and Pt and Au may be sequentially stacked on the P layer 17 or Pd and Au may be sequentially stacked on the P layer 17. Do. Here, the stacking order of Pt or Pd and Au may be optional. The transparent electrode 31 may be formed of at least two alloys selected from the group of Pt, Pd, and Au. When the transparent electrode 31 is formed of such a metal material, good ohmic contact characteristics may be obtained without performing an annealing process.

The transparent electrode 31 is also provided with an additional electrode 33 at the portion that is in electrical connection with the outside. This additional electrode 33 is also formed of the same metallic material as the transparent electrode of the present invention.

On the other hand, the electrode 35 formed on the N layer 13 can also be formed of the same metal material as the electrodes 31 and 33 formed on the P layer 17. However, it is possible to use a material of another component in consideration of the characteristics of the N layer 13, and the N-type electrode 25 and its components are already known by various techniques, detailed description thereof will be omitted.

Hereinafter, a method of manufacturing the GaN compound semiconductor of the present invention will be described.

4 is a flowchart illustrating a P layer manufacturing method of a GaN compound semiconductor according to the present invention. Although not mentioned in the present flowchart, the P layer 17 of the GaN compound semiconductor 1 is heated by feeding the substrate 11 into the growth chamber, and thereafter, the buffer layer 12, the N layer 13 and It is formed after the active layer 15 is sequentially grown (S1). Growth conditions of each layer, for example, conditions such as temperature and pressure, the thickness of each layer and the composition of the material for growth and the like is different. Techniques for this are readily available to those skilled in the art and publicly known bars, and a detailed description thereof will be omitted.

After forming the active layer 15, the P layer 17 is grown by supplying a growth gas into a high temperature growth chamber of 600 ° C or higher (S1). As the growth gas, for example, ammonia (NH 3 ) is preferably used, and is supplied together with a carrier gas (H 2 or N 2 ). When the growth of the P layer 17 is completed (S2), the supply of gases (growth gas and carrier gas) supplied into the growth chamber is stopped (S3), and all the gases present in the growth chamber are released (S4).

An important technical feature of the present invention is to provide conditions and conditions in which the P-type impurity and hydrogen cannot bind in the growth chamber. In the growth chamber, epi growth is performed at a high temperature of, for example, 500 ° C. or more, in which P-type impurities and hydrogen cannot be bonded. In the present invention, the P layer 17 is formed at a very high temperature, for example, 600 ° C. or higher, and the P-type impurity and hydrogen cannot be formed at the P layer formation temperature of the present invention. As such, after the P layer growth is completed at a very high temperature, the gas supply to the growth chamber is stopped from the outside and the gas remaining in the growth chamber is discharged to the outside. Then, since hydrogen is not present in the growth chamber, the P-type impurity and hydrogen cannot be combined, and the impurities in the P layer are in a state capable of performing a function of providing free holes. Since the P-type impurity and hydrogen are not combined, it is not necessary to perform the annealing process in the present invention.

After the gas in the growth chamber is completely discharged (S4), the heating is stopped (S5) to lower the temperature of the substrate 11 in the growth chamber and the GaN compound semiconductor layer 25 formed thereon (S6). Here, the temperature of the substrate 11 and the GaN compound semiconductor layer 25 may be lowered by cooling the growth chamber by air cooling or water cooling. The temperature of the substrate 11 and the GaN compound semiconductor layer 25 may be lowered by injecting a cooling gas in a state where the gas in the growth chamber is completely released. As the cooling gas, for example, nitrogen (N 2 ) gas, which is difficult to bond with P-type impurities, may be used, but is preferably used as a carrier gas. If the cooling chamber is injected after the growth chamber is formed in a vacuum state, the temperature of the substrate 11 and the GaN compound semiconductor layer 25 can be lowered more quickly.

When the temperature of the substrate and the GaN compound semiconductor layer is sufficiently low (S7), the substrate and the GaN compound semiconductor layer are taken out in the growth chamber (S8). Then, since an impurity and hydrogen are not combined in the P layer, a separate annealing process is not necessary. In this case, the impurities in the P layer can contribute to the formation of free holes as they are, and therefore, it is possible to provide a product having excellent properties that provides low resistance.

After forming the P layer of the GaN-based compound semiconductor, an electrode formation process (not shown) is performed to fabricate individual devices as shown in FIGS. 2 and 3. In the electrode forming step, the P layer 17, the active layer 15, and the N layer 13 are partially etched to expose a portion of the N layer 13. Then, the electrodes 31, 33, 35 are formed on the partially etched upper surface of the P layer 17 and the upper surface of the N layer 13, respectively. The electrode is replaced by the description with reference to FIGS. 2 and 3. In this case, good ohmic contact characteristics can be obtained without the annealing process.

5 is a longitudinal cross-sectional view of a GaN compound semiconductor including a P layer according to another embodiment of the present invention. In the GaN compound semiconductor 41 of the present embodiment, an N layer 13, an active layer 15, and a P layer 17 are formed on a substrate 11, and a P-type electrode ( 31) is formed. The substrate 11 is made of a conductive or semiconductive metal, Si, SiC, GaN, or the like, and functions as an N-type electrode in itself. The upper surface of the P-type electrode 31 and / or the lower surface of the substrate 11 may form portions for electrical connection with the outside, respectively. A buffer layer (12 in FIGS. 2 and 3) can be formed between the N layer 13 and the substrate 11 as in the above-described embodiment.

Even in this configuration, the P layer 17 is formed without an annealing process, as described above with reference to FIG. After the P layer 17 is formed, the electrode may be formed of at least one metal material selected from the group containing Pt, Pd, and Au. Then, the GaN compound semiconductor may be manufactured without performing annealing on the whole process.

In FIG. 5, the embodiment in which the substrate 11 is disposed adjacent to the N layer 13 has been described, but the present invention is not limited thereto, and the present invention is also applicable to a configuration in which the substrate is disposed adjacent to the P layer. Even in such a configuration, the same functions and effects as in the above-described and illustrated embodiments are provided.

As described above, according to the present invention, a P layer of a GaN compound semiconductor and a method for manufacturing the same can be secured sufficiently without performing an annealing process. In the present invention, since the annealing process can be eliminated as described above, the GaN compound semiconductor can be produced simply and conveniently, and the facility investment is also very low.

Claims (7)

Supplying a gas to form a P layer while maintaining a temperature in the growth chamber at a P layer growth temperature of a GaN compound semiconductor; Stopping the supply of the gas when the P layer is formed; Releasing all of the gases including hydrogen present in the growth chamber at a temperature higher than a temperature at which impurities in the P layer and hydrogen contained in the gas start to bond; Stopping heating to maintain a temperature in the growth chamber; And Lowering the P layer temperature of the GaN compound semiconductor; The P layer growth temperature is at least 600 ℃, The method of manufacturing a P layer of a GaN compound semiconductor, characterized in that for discharging the gas containing hydrogen present in the growth chamber is 400 ℃ or more. The method according to claim 1, P layer manufacturing method of the GaN compound semiconductor, characterized in that the temperature of the P layer is lowered by air cooling or water cooling. The method of claim 1, wherein the step of lowering the P layer temperature, Forming a vacuum in the growth chamber; And Filling the cooling gas into the growth chamber; P layer manufacturing method of a GaN compound semiconductor comprising a. The method according to claim 1, before forming the P layer, Forming an N layer and an active layer on the substrate; After lowering the P layer temperature, Withdrawing the substrate from the growth chamber; And Forming a transparent electrode, a P-type electrode and an N-type electrode on the substrate; P layer manufacturing method of a GaN compound semiconductor further comprising. The method according to claim 4, before forming the transparent electrode, P-type electrode and N-type electrode, Etching at least a portion of the P layer and the active layer on the substrate to expose a portion of the N layer, The transparent electrode and the P-type electrode is formed on the surface of the P layer, the N-type electrode is formed on the surface of the exposed N layer P layer manufacturing method of the GaN compound semiconductor. The method of claim 4, wherein at least one of the transparent electrode, the P-type electrode, and the N-type electrode is formed of at least one material selected from the group of Pt, Pd, and Au, or an alloy thereof. delete
KR20050093596A 2005-10-04 2005-10-05 P-LAYER OF A GaN BASED COMPOUND SEMICONDUCTOR AND METHOD OF FABRICATING THE SAME KR101186681B1 (en)

Priority Applications (8)

Application Number Priority Date Filing Date Title
KR20050093596A KR101186681B1 (en) 2005-10-05 2005-10-05 P-LAYER OF A GaN BASED COMPOUND SEMICONDUCTOR AND METHOD OF FABRICATING THE SAME
PCT/KR2005/003850 WO2007040295A1 (en) 2005-10-04 2005-11-14 (al, ga, in)n-based compound semiconductor and method of fabricating the same
TW095100305A TWI389335B (en) 2005-10-04 2006-01-04 (al, ga, in)n-based compound semiconductor and method of fabricating the same
US11/338,008 US20070074651A1 (en) 2005-10-04 2006-01-24 (Al, Ga, In) N-based compound semiconductor and method of fabricating the same
JP2006017614A JP2007103894A (en) 2005-10-04 2006-01-26 (Al, Ga, In) N COMPOUND SEMICONDUCTOR AND ITS MANUFACTURE
EP20060002155 EP1772909B1 (en) 2005-10-04 2006-02-02 (AI,Ga,In)N-Based compound semiconductor and method of fabricating the same
US12/132,760 US8906159B2 (en) 2005-10-04 2008-06-04 (Al, Ga, In)N-based compound semiconductor and method of fabricating the same
US12/502,513 US20090278234A1 (en) 2005-10-04 2009-07-14 (Al, Ga, In)N-BASED COMPOUND SEMICONDUCTOR AND METHOD OF FABRICATING THE SAME

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KR20050093596A KR101186681B1 (en) 2005-10-05 2005-10-05 P-LAYER OF A GaN BASED COMPOUND SEMICONDUCTOR AND METHOD OF FABRICATING THE SAME

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002270895A (en) * 2001-03-09 2002-09-20 Hitachi Cable Ltd Method for manufacturing p-type nitride compound semiconductor and semiconductor wafer, and semiconductor device
JP2003031845A (en) * 2001-04-30 2003-01-31 Lumileds Lighting Us Llc Formation of low-resistivity p-type gallium nitride
JP2003110141A (en) * 2001-09-27 2003-04-11 Toshiaki Sakaida Method for manufacturing gallium nitride-based compound semiconductor

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002270895A (en) * 2001-03-09 2002-09-20 Hitachi Cable Ltd Method for manufacturing p-type nitride compound semiconductor and semiconductor wafer, and semiconductor device
JP2003031845A (en) * 2001-04-30 2003-01-31 Lumileds Lighting Us Llc Formation of low-resistivity p-type gallium nitride
JP2003110141A (en) * 2001-09-27 2003-04-11 Toshiaki Sakaida Method for manufacturing gallium nitride-based compound semiconductor

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