KR101166435B1 - Efficient etching methods to obtain nano- or mico-sized pyramid patterns on silicon wafers - Google Patents
Efficient etching methods to obtain nano- or mico-sized pyramid patterns on silicon wafers Download PDFInfo
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- 238000005530 etching Methods 0.000 title claims abstract description 97
- 238000000034 method Methods 0.000 title claims abstract description 43
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 32
- 239000010703 silicon Substances 0.000 title claims abstract description 32
- 235000012431 wafers Nutrition 0.000 title description 33
- 238000004140 cleaning Methods 0.000 claims abstract description 23
- 239000003960 organic solvent Substances 0.000 claims abstract description 10
- 230000008569 process Effects 0.000 claims description 19
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 9
- 239000007788 liquid Substances 0.000 claims description 8
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 5
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims description 4
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 claims description 4
- 238000013329 compounding Methods 0.000 claims description 3
- 238000005406 washing Methods 0.000 claims description 3
- 238000012546 transfer Methods 0.000 abstract description 4
- 238000009210 therapy by ultrasound Methods 0.000 abstract 1
- 239000000243 solution Substances 0.000 description 26
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 8
- 230000035939 shock Effects 0.000 description 5
- 238000001039 wet etching Methods 0.000 description 5
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- 230000002378 acidificating effect Effects 0.000 description 2
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- 238000004519 manufacturing process Methods 0.000 description 2
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- 238000003486 chemical etching Methods 0.000 description 1
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- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
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- VLYWMPOKSSWJAL-UHFFFAOYSA-N sulfamethoxypyridazine Chemical class N1=NC(OC)=CC=C1NS(=O)(=O)C1=CC=C(N)C=C1 VLYWMPOKSSWJAL-UHFFFAOYSA-N 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
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- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
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- H01L21/3105—After-treatment
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- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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Abstract
본 발명은 (100) 실리콘 웨이퍼의 식각방법에 관한 것으로, 특히 웨이퍼표면의 산화막을 제거하는 1단계와 상기 웨이퍼의 표면에 KOH를 포함하는 식각용액으로 식각을 수행하되 초음파처리를 병행하는 2단계 및 약산성을 포함하는 세정액을 이용하여 상기 웨이퍼를 세정하는 3단계를 포함하여 구성될 수 있다.
본 발명에 따르면 KOH 및 유기 용제를 포함하는 식각용액을 통해 나노, 또는 마이크로미터 크기의 사각뿔 피라미드 패턴을 얻을 수 있는 효과가 있다. 특히, 본 발명에 따른 식각방법을 통해 실리콘의 효율적인 비등방성 식각 방법을 이용하여 'V'자형 또는 사각뿔 형태의 피라미드 패턴을 구현할 수 있으며, 구현된 패턴이 형성된 실리콘 웨이퍼는 패턴전사를 위한 마스터로 사용할 수 있다.The present invention relates to an etching method of a (100) silicon wafer, in particular, the first step of removing the oxide film on the surface of the wafer and the second step of performing an ultrasonic treatment while etching with an etching solution containing KOH on the surface of the wafer; It may be configured to include three steps of cleaning the wafer using a cleaning solution containing weak acidity.
According to the present invention, through an etching solution containing KOH and an organic solvent, there is an effect of obtaining a square pyramid pattern of nano, or micrometer size. In particular, through the etching method according to the present invention, an efficient anisotropic etching method of silicon can be used to implement a pyramid pattern of 'V' shape or square pyramid shape, and the silicon wafer having the implemented pattern is used as a master for pattern transfer. Can be.
Description
본 발명은 방향성을 가지는 (100)실리콘 웨이퍼의 식각방법에 관한 것으로, 특히 방향성을 가진 실리콘 웨이퍼 표면상에 나노 및 마이크로 크기의 피라미드 형태 사각뿔 패턴을 얻기 위한 식각방법에 관한 것이다.The present invention relates to an etching method of a (100) silicon wafer having a directional, and more particularly to an etching method for obtaining a pyramidal pyramidal pattern of nano and micro size on the surface of the oriented silicon wafer.
나노, 또는 마이크로미터 크기의 고유한 형태를 갖는 패턴 마스터를 제작하는 방법은 여러 가지 방법이 있는데, 기계적 가공에 의한 방법, 레이저 직접전사 방법, 금형 제작을 통한 역전사등이 그것이다. There are various methods of fabricating a pattern master having a unique shape of nano or micrometer size, such as a method by mechanical processing, a laser direct transfer method, and reverse transcription through mold making.
실리콘 웨이퍼는 여러 가지 결정의 방향성에 따라 구별되며, 이러한 실리콘은 화학 가스를 이용한 건식식각, 또는 화학적 식각이 가능한 습식식각을 이용하여 효과적으로 비등방성 에칭이 된다. 즉, 사용하는 기판의 방향성에 따라서 그리고 마스크의 형태, 사용 용도에 따라 ‘V’자 형태의 식각이나 원형의 언더컷 형태, 오버컷 또는 직각형태의 식각패턴을 구현할 수 있다. 이러한 패턴은 LED, LD, PD, fiber array 등 다양한 광학소자를 로딩하여 모듈화하는 기본적인 플랫폼으로 널리 사용되고 있다.Silicon wafers are distinguished according to the orientation of various crystals, and such silicon is effectively anisotropically etched by dry etching using chemical gas or wet etching capable of chemical etching. That is, depending on the orientation of the substrate to be used and the shape of the mask and the purpose of use, the 'V' shaped or circular undercut, overcut or right angle etching patterns may be realized. This pattern is widely used as a basic platform for loading and modularizing various optical devices such as LED, LD, PD, and fiber array.
본 발명은 방향성을 가지는 (100) 실리콘 웨이퍼의 식각방법에서 실리콘의 효율적인 비등방성 식각 방법을 이용하여 'V'자형 또는 사각뿔 형태의 피라미드 패턴을 구현할 수 있으며, 구현된 패턴이 형성된 실리콘 웨이퍼는 패턴전사를 위한 마스터로 사용할 수 있는 식각방법을 제공하는 데 있다.According to the present invention, a pyramid pattern having a 'V' shape or a square pyramid pattern may be realized by using an anisotropic etching method of silicon in an etching method of a oriented (100) silicon wafer, and the silicon wafer on which the implemented pattern is formed is pattern transfer. To provide an etching method that can be used as a master for.
상술한 과제를 해결하기 위한 수단으로서, 본 발명은 (100)실리콘 웨이퍼표면의 산화막을 제거하는 1단계; 상기 웨이퍼의 표면에 KOH를 포함하는 식각용액으로 식각을 수행하되, 식각과정에 초음파를 가하여 식각을 수행하는 2단계; 약산성을 포함하는 세정액을 이용하여 상기 웨이퍼를 세정하는 3단계;를 포함하는 실리콘 웨이퍼의 식각방법을 제공한다.As a means for solving the above problems, the present invention comprises the steps of removing the oxide film on the (100) silicon wafer surface; Performing an etching with an etching solution containing KOH on the surface of the wafer, and performing etching by applying ultrasonic waves to the etching process; It provides an etching method of a silicon wafer comprising; three steps of cleaning the wafer using a cleaning solution containing weak acidity.
특히, 이 경우 상기 1단계는, 상기 웨이퍼의 표면에 EKC-830용액, BOE, HF 중 선택되는 어느 하나를 이용하여 세정을 수행하는 단계로 구성할 수 있으며, 상기 2단계는, 상기 식각용액을, KOH에 Isopropyl alchol, ethyl alcohl, methyl alcohl, acetone 중 선택되는 어느 하나 또는 둘 이상의 유기용제물을 더 포함하여 구성되는 것을 이용하여 식각을 수행하는 단계로 형성할 수 있다.In particular, in this case, the first step may be configured to perform the cleaning using any one selected from the EKC-830 solution, BOE, HF on the surface of the wafer, the second step, the etching solution It may be formed by the step of performing etching using KOH, Isopropyl alchol, ethyl alcohl, methyl alcohl, acetone further comprises any one or two or more organic solvents selected from.
또한, 상기 2단계의 식각용액은, KOH:유기용제물:DI water의 중량%(wt%)가 1:4:45의 비율로 형성하여 구현할 수 있다.In addition, the etching solution of the second step, KOH: organic solvent: the weight% (wt%) of the DI water can be implemented by forming a ratio of 1: 4: 45.
아울러, 상기 2단계는, 상기 실리콘웨이퍼의 표면에 식각마스크를 구비하고, 상기 식각용액을 처리하는 단계로 구현할 수 있다.In addition, the second step may include an etching mask on the surface of the silicon wafer, and may be implemented by treating the etching solution.
또한, 상기 3단계는, HCl:DI water의 배합비율이 10:1로 형성되는 세정액에 상기 웨이퍼를 침지하여 세정하는 단계로 형성할 수 있다.In addition, the step 3 may be formed by immersing the wafer in a cleaning liquid having a compounding ratio of HCl: DI water of 10: 1 to clean the wafer.
본 발명에 따르면, KOH 및 유기 용제를 포함하는 식각용액을 통해 나노, 또는 마이크로미터 크기의 사각뿔 피라미드 패턴을 얻을 수 있는 효과가 있다.According to the present invention, it is possible to obtain a square pyramid pattern of nano, or micrometer size through an etching solution containing KOH and an organic solvent.
도 1은 본 발명에 따른 공정을 도시한 블럭도이다.
도 2는 본 발명에 따른 식각공정을 마친 웨이퍼 표면의 확대이미지를 도시한 평면이미지이다.
도 3은 본 발명에 따른 식각공정을 마친 웨이퍼 표면의 확대이미지를 도시한 측면이미지이다.1 is a block diagram illustrating a process according to the present invention.
Figure 2 is a planar image showing an enlarged image of the wafer surface after the etching process according to the present invention.
3 is a side view illustrating an enlarged image of the wafer surface after the etching process according to the present invention.
이하에서는 첨부한 도면을 참조하여 본 발명에 따른 구성 및 작용을 구체적으로 설명한다. 첨부 도면을 참조하여 설명함에 있어, 도면 부호에 관계없이 동일한 구성요소는 동일한 참조부여를 부여하고, 이에 대한 중복설명은 생략하기로 한다.
Hereinafter, with reference to the accompanying drawings will be described in detail the configuration and operation according to the present invention. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS In the following description with reference to the accompanying drawings, the same reference numerals denote the same elements regardless of the reference numerals, and redundant description thereof will be omitted.
도 1은 본 발명에 따른 실리콘 웨이퍼의 식각공정을 도시한 공정도이다.1 is a process chart showing an etching process of a silicon wafer according to the present invention.
도시된 도면을 참조하면, 본 발명은 실리콘웨이퍼의 식각방법에 관한 것으로, 특히 웨이퍼표면의 산화막을 제거하는 1단계와 상기 웨이퍼의 표면에 KOH를 포함하는 식각용액으로 식각을 수행하는 2단계, 그리고 약산성을 포함하는 세정액을 이용하여 상기 웨이퍼를 세정하는 3단계를 포함하여 구성된다.Referring to the drawings, the present invention relates to an etching method of a silicon wafer, in particular, the first step of removing the oxide film on the wafer surface and the second step of etching with an etching solution containing KOH on the surface of the wafer, and And three steps of cleaning the wafer using a cleaning solution containing weak acidity.
각각의 공정 단계를 이하에서 기술하는 실시예를 이용하여 구체적으로 설명하기로 한다. 이하 본 발명의 공정단계에서는 특히 특정한 방향성을 가지는 (100) 실리콘 웨이퍼를 적용하여 공정을 설명하기로 한다. "(100)"이란 실리콘의 방향성을 나타내는 식별기호이다.
Each process step will be described in detail using the examples described below. Hereinafter, in the process step of the present invention, the process will be described by applying a (100) silicon wafer having a particular orientation. "(100)" is an identification symbol indicating the directionality of silicon.
(1) 1단계-실리콘웨이퍼 표면의 세정단계(1) Step 1-Cleaning the Silicon Wafer Surface
상기 1단계는 식각하고자 하는 실리콘 웨이퍼의 표면을 세정액으로 세정하는 단계로 구성된다. 특히 본 세정은 실리콘 웨이퍼 표면에 형성되는 산화막 및 오염원을 제거하는 작용을 구현한다.The first step consists of cleaning the surface of the silicon wafer to be etched with a cleaning liquid. In particular, this cleaning implements the action of removing oxide films and contaminants formed on the silicon wafer surface.
구체적으로 본 발명에 따른 일 실시예로서는 세정액으로 EKC-830 용액을 사용할 수 있다. 즉, 후술할 KOH를 포함하는 식각용액을 이용하여 습식식각을 수행하기 전에 전처리 단계로소, 웨이퍼 표면의 산화막을 제거하기 위하여 EKC-830 용액으로 10분간 세정한다 (전처리). 본 실시예예서 사용한 세정액은 하나의 일예를 든것이며, 식각용으로 사용되는 BOE, HF 등의 세정액이 적용될 수도 있다.
Specifically, as an embodiment according to the present invention it can be used EKC-830 solution as a cleaning liquid. That is, before performing wet etching using an etching solution containing KOH, which will be described later, the EKC-830 solution is washed for 10 minutes to remove the oxide film on the wafer surface (pretreatment). The cleaning liquid used in the present embodiment is an example, and cleaning liquids such as BOE and HF used for etching may be applied.
(2) 2단계-실리콘웨이퍼의 식각단계(2) Step 2-etching step of silicon wafer
상기 2단계는 실리콘 웨이퍼의 표면을 식각하는 공정으로 구현된다. 특히 본 단계는 나노, 또는 마이크로 크기 형태의 사각뿔 구조의 피라미드 패턴을 구현하기 위하여 본 발명에서는 식각용액 물질을 사용한 습식 식각을 이용하는 것을 특징으로 한다. 습식식각에도 식각 마스크를 사용하는 경우와, 사용하지 않는 경우 모두 해당한다.The second step is implemented by a process of etching the surface of the silicon wafer. In particular, this step is characterized in that the present invention uses a wet etching using an etching solution material in order to implement a pyramid pattern of a square pyramidal structure of nano, or micro size. This applies to both wet etching and non-etching masks.
본 발명에 따른 상기 식각용액을, KOH에 Isopropyl alchol, ethyl alcohl, methyl alcohl, acetone 중 선택되는 어느 하나 또는 둘이상의 유기용제물을 더 포함하여 구성된 것을 이용할 수 있다.The etching solution according to the present invention, KOH may be used further comprising any one or two or more organic solvents selected from isopropyl alchol, ethyl alcohl, methyl alcohl, acetone.
즉, 기본적으로 KOH용액을 기본적인 습식식각 용액으로 하고, Isopropyl alchol, ethyl alcohl, methyl alcohl, acetone 등 유기용제물, DI (deionized water)등의 혼합용액으로 구성될 수도 있다. 특히, KOH, Isopropyl alcohol, ethyl alcohl, methyl alcohl, acetone 등 복수 용매의 적절한 배합이 될 수도 있다.That is, the KOH solution is basically a basic wet etching solution, and may be composed of a mixed solution such as organic solvents such as isopropyl alchol, ethyl alcohl, methyl alcohl, acetone, and DI (deionized water). In particular, it may be an appropriate combination of a plurality of solvents such as KOH, Isopropyl alcohol, ethyl alcohl, methyl alcohl, acetone.
본 발명의 바람직한 일 실시예에서는 식각용액을 KOH:유기용제물:DI water의 중량%(wt%)가 1:4:45의 비율로 형성하는 것이 바람직하다. 즉 식각 조건을 DI water : IPA : KOH = 90 : 8 : 2 (wt%)의 비율로 형성하는 경우, 본 발명에서 구현하고자 하는 나노, 또는 마이크로미터 크기의 사각뿔 피라미드 패턴구현의 효율성이 극대화하게 된다.In an exemplary embodiment of the present invention, it is preferable that the etching solution is formed in a weight ratio (wt%) of KOH: organic solvent: DI water in a ratio of 1: 4: 45. That is, when the etching conditions are formed at a ratio of DI water: IPA: KOH = 90: 8: 2 (wt%), the efficiency of the nano, or micrometer sized pyramid pyramid pattern implementation is maximized. .
특히, 본 발명에서 사용되는 식각용액의 주성분인 KOH 용액은 실리콘 웨이퍼 표면에 대하여 57.3도의 각도로 식각을 시키는 특성을 갖는다. 따라서, 식각 마스크의 패턴 크기, 식각 조건 등을 적절히 조절함으로써 적절한 크기의 피라미드 구조로 식각이 가능하다. 또한 식각용액의 온도와 식각시간이 중요한 식각 변수이다. 특히, 실리콘 식각을 촉발시키는 유발조건으로서 nucleation 유발인자, 즉 초음파 충격도 식각 변수로서 공정조건을 확보하였다.In particular, the KOH solution, which is the main component of the etching solution used in the present invention, has a property of etching at an angle of 57.3 degrees with respect to the silicon wafer surface. Therefore, by appropriately adjusting the pattern size, etching conditions, and the like of the etching mask, etching can be performed in a pyramid structure of an appropriate size. In addition, the temperature and the etching time of the etching solution are important etching parameters. In particular, the nucleation-inducing factor, that is, the ultrasonic shock, as the triggering condition for triggering silicon etching, also secured process conditions as an etching parameter.
아래의 표 1은 본 발명에 따른 상기 2단계의 식각공정에서 이용되는 식각용액의 농도변수에 따른 식각의 정도를 나타내는 표를 도시한 것이다.Table 1 below shows a table showing the degree of etching according to the concentration variable of the etching solution used in the etching step of the second step according to the present invention.
90% : 8% : 2%
( 그 외 조건들 고정)DI: IPA: KOH
90%: 8%: 2%
(Fixed other conditions)
87% : 8% : 5%
( 그 외 조건들 고정)DI: IPA: KOH
87%: 8%: 5%
(Fixed other conditions)
85% : 8% : 7%
( 그 외 조건들 고정)DI: IPA: KOH
85%: 8%: 7%
(Fixed other conditions)
(식각이 거의 일어나지 않음)Bad
(Etching rarely occurs)
(식각이 거의 일어나지 않음)Bad
(Etching rarely occurs)
아래의 표 2는 본 발명에 따른 상기 2단계의 식각공정에서 이용되는 식각용액의 시간 변수에 따른 식각의 정도를 나타낸 표를 도시한 것이다. Table 2 below shows a table showing the degree of etching according to the time variable of the etching solution used in the etching step of the second step according to the present invention.
(그 외 조건들 고정)Etching time: 50 minutes-> 30 minutes
(Other conditions fixed)
식각 시간 50분
Etching time 50 minutes
(그 외 조건들 고정)Etching time: 50 minutes-> 70 minutes
(Other conditions fixed)
(가장자리 식각 덜 이뤄짐)usually
(Less edge etch)
아래의 표 3은 본 발명에 따른 상기 2단계의 식각공정에서 이용되는 식각용액의 온도 변수에 따른 식각의 정도를 나타낸 표를 도시한 것이다.Table 3 below shows a table showing the degree of etching according to the temperature variable of the etching solution used in the etching step of the second step according to the present invention.
(그 외 조건들 고정)Temperature change: 83 ℃ ---> 55 ℃
(Other conditions fixed)
식각온도 83 ℃
Etching Temperature 83 ℃
(그 외 조건들 고정)Temperature change: 83 ℃-> 70 ℃
(Other conditions fixed)
(식각이 덜 이뤄지고 표면 얼룩이 많이 나타남)Bad
(Less etching and more surface staining)
양호
Good
(가장 자리 부분 식각이 조금 미비)Good
(The edge part etching is slightly incomplete)
아래의 표 4는 본 발명에 따른 상기 2단계의 식각공정에서 이용되는 식각용액의 초음파충격 변수에 따른 식각의 정도를 나타낸 표를 도시한 것이다.Table 4 below shows a table showing the degree of etching according to the ultrasonic shock parameters of the etching solution used in the etching step of the second step according to the present invention.
(그 외 조건들 고정)Ultrasound Unused
(Other conditions fixed)
(그 외 조건들 고정)Ultrasonic use
(Other conditions fixed)
(재현성이 떨어짐, 식각률 또한 일정하지 않음)Bad
(Not reproducible, etching rate is not constant)
(재현성 및 식각률 거의 일정)Good
(Nearly constant reproducibility and etch rate)
표 4의 결과에서 알 수 있듯이 초음파 충격이 있는 경우와 없는 경우의 식각 정도에서 뚜렷한 차이를 보여주는 바, 본 식각공정에서는 초음파 충격시간이 매우 중요한 변수임을 알 수 있다.
As can be seen from the results of Table 4, there is a clear difference in the degree of etching with and without ultrasonic shock, and thus the ultrasonic shock time is a very important variable in this etching process.
(3) 3단계-세정단계(3) Stage 3-Cleaning Stage
상술한 식각단계 이후에는 후처리 공정으로 세정공정이 수행될 수 있다.After the etching step, the cleaning process may be performed as a post-treatment process.
상기 세정공정은 약산성의 세정액을 이용하여 표면을 세정하는 공정으로 수행되며, 구체적인 일 실시예로서는 HCl:DI water의 배합비율이 10:1로 형성되는 세정액에 상기 웨이퍼를 침지하여 세정하는 단계로 구현할 수 있다. 즉 세정액 (DI water : HCl = 10:1)에 5분 정도 담가 세정한다. 본 세정단계는 다양한 종류의 산성물질을 활용할 수 있으며, 바람직하게는 묽은염산 (HCl)을 희석하여 사용할 수 있다. The cleaning process may be performed by cleaning a surface by using a weakly acidic cleaning liquid. As a specific embodiment, the cleaning process may be implemented by immersing the wafer in a cleaning liquid having a compounding ratio of HCl: DI water of 10: 1. have. That is, it is immersed in a washing solution (DI water: HCl = 10: 1) for about 5 minutes and washed. This washing step may utilize a variety of acidic materials, preferably dilute hydrochloric acid (HCl) can be used.
상술한 공정에 따른 본 발명의 식각공정에 의하면, KOH를 비롯한 유기용제의 배합비율, 식각온도, 식각시간, 초음파 충격 파수 및 식각 시간의 파라미터를 통해 사각뿔 패턴을 효율적으로 구현할 수 있으며, 나아가 이러한 패턴을 필름에 전사하여 적용할 수 있다.According to the etching process of the present invention according to the above-described process, it is possible to efficiently implement the square pyramid pattern through the parameters of the mixing ratio of the organic solvent, including KOH, etching temperature, etching time, ultrasonic shock wave and etching time, furthermore, such a pattern Can be transferred to a film and applied.
도 2는 본 발명에 따른 식각공정을 마친 웨이퍼 표면의 확대이미지(SEM 이미지)를 도시한 평면이미지이며, 도 3은 본 발명에 따른 식각공정을 마친 웨이퍼 표면의 확대이미지를 도시한 측면이미지이다.2 is a planar image showing an enlarged image (SEM image) of the wafer surface after the etching process according to the present invention, Figure 3 is a side image showing an enlarged image of the wafer surface after the etching process according to the present invention.
도시된 이미지와 같이, 본 발명에 따른 식각방법을 통해 실리콘의 효율적인 비등방성 식각 방법을 이용하여 'V'자형 또는 사각뿔 형태의 피라미드 패턴을 구현할 수 있으며, 구현된 패턴이 형성된 실리콘 웨이퍼는 패턴전사를 위한 마스터로 사용할 수 있다. As shown in the image, a pyramid pattern having a 'V' shape or a square pyramid can be realized by using an efficient anisotropic etching method of silicon through the etching method according to the present invention. Can be used as a master for
또한, 본 발명에 따라 형성된 실리콘 웨이퍼의 패턴은 LED, OLED광원과 같은 램버시안 (Lambertian) 발광형태의 광원의 다각도 방사를 일정한 방향으로, 그리고 손실이 없이 가능한 최대의 광량을 전방으로 추출하도록 하는 장점이 구현된다.In addition, the pattern of the silicon wafer formed in accordance with the present invention has the advantage of extracting the multi-angle radiation of the Lambertian light source such as LED, OLED light source in a constant direction and the maximum amount of light possible without loss This is implemented.
아울러, 파라미드 사각뿔 형태의 나노, 또는 마이크로 크기의 패턴을 통해 구현되는 패턴 전사가 된 필름은, 램버시안 (Lambertian) 발광형태의 광원에 대하여 균일하고 최대의 광추출 효율을 구현될 수 있도록 한다.In addition, the pattern-transfer film formed through the nano- or micro-sized pattern in the form of a paramid square pyramid can realize a uniform and maximum light extraction efficiency with respect to the light source of the Lambertian emission type.
또한, 태양전지 제조에서 외부 태양광의 입사가 최대화 시키는 것이 중요한데 이때 투명전도 산화막 (TCO)의 표면을 마이크로 피라미드 패턴을 형성하여 반사광이 없이 최대의 투과율을 가지는 표면 필름의 제작에 유용하게 사용될 수 있다.In addition, in solar cell manufacturing, it is important to maximize the incidence of external sunlight. In this case, the surface of the transparent conductive oxide film (TCO) may be formed to form a micro pyramid pattern, which may be usefully used in the manufacture of a surface film having the maximum transmittance without the reflected light.
전술한 바와 같은 본 발명의 상세한 설명에서는 구체적인 실시예에 관해 설명하였다. 그러나 본 발명의 범주에서 벗어나지 않는 한도 내에서는 여러 가지 변형이 가능하다. 본 발명의 기술적 사상은 본 발명의 기술한 실시예에 국한되어 정해져서는 안 되며, 특허청구범위뿐만 아니라 이 특허청구범위와 균등한 것들에 의해 정해져야 한다.In the foregoing detailed description of the present invention, specific examples have been described. However, various modifications are possible within the scope of the present invention. The technical idea of the present invention should not be limited to the embodiments of the present invention but should be determined by the equivalents of the claims and the claims.
Claims (6)
상기 웨이퍼의 표면에 KOH:유기용제물:DI water의 중량%(wt%)가 1:4:45의 비율인 식각용액으로 식각을 수행하되, 식각과정에 초음파를 가하여 식각을 수행하는 2단계;
HCl:DI water의 배합비율이 10:1로 형성되는 세정액에 상기 웨이퍼를 침지하여 상기 웨이퍼를 세정하는 3단계;
를 포함하는 실리콘 웨이퍼의 식각방법.
Removing the oxide film on the (100) silicon wafer surface having directivity;
Performing a etch with an etching solution having a weight ratio (wt%) of KOH: organic solvent: DI water of 1: 4: 45 on the surface of the wafer, wherein etching is performed by applying ultrasonic waves to the etching process;
Washing the wafer by immersing the wafer in a cleaning liquid having a compounding ratio of HCl: DI water of 10: 1;
Etching method of a silicon wafer comprising a.
상기 1단계는,
상기 웨이퍼의 표면에 EKC-830용액, BOE, HF 중 선택되는 어느 하나를 이용하여 세정을 수행하는 단계인 실리콘 웨이퍼의 식각방법.
The method according to claim 1,
The first step,
And etching the surface of the wafer using any one selected from EKC-830 solution, BOE, and HF.
상기 2단계는,
상기 식각용액을,
KOH에 Isopropyl alchol, ethyl alcohl, methyl alcohl, acetone 중 선택되는 어느 하나 또는 둘 이상의 유기용제물을 더 포함하여 구성되는 것을 이용하여 식각을 수행하는 단계인 실리콘 웨이퍼의 식각방법.
The method according to claim 2,
In the second step,
The etching solution,
An etching method of etching a silicon wafer, wherein the etching is performed using KOH further comprising any one or two or more organic solvents selected from isopropyl alchol, ethyl alcohl, methyl alcohl, and acetone.
상기 2단계는,
상기 실리콘웨이퍼의 표면에 식각마스크를 구비하고, 상기 식각용액을 처리하는 단계인 실리콘 웨이퍼의 식각방법.
The method according to claim 3,
In the second step,
The etching method of the silicon wafer is provided with an etching mask on the surface of the silicon wafer, the etching solution.
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