KR101166049B1 - ZnO-BASED VARISTOR COMPOSITION - Google Patents

Abstract

The present invention relates to a ZnO-based varistor composition, the composition of which includes Mn ₃ O ₄ , CaCO ₃ , CuO, Cr ₂ O ₃ , La ₂ O ₃ and Y ₂ O ₃ . Particularly, the composition contains V ₂ O ₅ , whereas conventional compositions require high temperature sintering at 1200 ° C. or higher, whereas low temperature sintering is possible at around 900 ° C., grain boundary insulation is improved, nonlinearity is greatly improved, and Bi ₂ O ₃ is improved. Electrostatic (ESD) properties are greatly improved because it does not contain Pb-based oxides, which do not contain Sb ₂ O ₃ , an environmental regulation component, and ensure work stability, and require high-temperature sintering to consume large amounts of expensive electrode materials. Since it does not contain, the manufacturing cost of the varistor is reduced, which is very advantageous.

Description

ZnO-based varistor composition {ZnO-BASED VARISTOR COMPOSITION}

The present invention relates to a ZnO-based varistor composition, and more particularly, to a ZnO-based varistor composition which is capable of low temperature sintering and provides greatly improved electro-static discharge (ESD) characteristics, excellent work stability, and reduced manufacturing cost.

In recent years, with the rapid increase of high frequency and large capacity of electronic devices and mobile terminals, the main issue is to protect electronic circuits and electronic components used in these devices from various surges and abnormal voltages such as pulsed noise. It is becoming. Examples of such surges include load dump surges, ignition surges, lightning surges, and switching surges.

As part of this, varistors that can effectively cope with noise regulation while ensuring the protection and operation stability of circuits and components against electrostatic discharge (ESD) are mainly studied. Such varistors are generally focused on developing varistor compositions having excellent properties because their structure is very simple because only the solid composition and the electrode are composed, and their performance depends entirely on the properties of the composition.

Varistor compositions developed to date include ZnO-based, SnO ₂ -based, SiC-based and SrTiO _3- based varistor compositions. Among these, ZnO-based varistor compositions have excellent non-linearity in voltage and can be used for electrostatic (ESD) and various surge devices. It has excellent protection ability and is widely used for antistatic protection and surge protection. Such ZnO-based compositions are currently being developed mainly as Bi-ZnO-based compositions, Pr-ZnO-based compositions, and the like.

In particular, Bi-ZnO-based varistor composition generally contains components such as Bi ₂ O ₃ , Sb ₂ O ₃ , Mn, Co, Ni, Cr, glass frit, Al, K, etc. as a basic composition (eg : Japanese Patent Application Laid-Open No. 3-278402). However, the Bi ₂ O ₃ The component has four kinds of homogeneous anomalies during sintering of the varistor composition containing the same and forms liquid phase sintering to form phases with high ionic conductivity in the varistor. Short occurs and bulkheads collapse and insulation breakdown occurs easily. Accordingly, Bi ₂ O ₃ Bi-ZnO-based varistor compositions containing components have a serious problem of poor ESD resistance. As well as Sb ₂ O ₃ Since components are classified as carcinogens and their concentrations are regulated, Bi-ZnO-based varistors containing the same have disadvantages in that they are not free to manufacture.

In addition, the Pr-ZnO-based varistor composition has a good voltage nonlinearity (for example, Japanese Patent Application Laid-open No. Hei 5-283209), but has a disadvantage in that the leakage current is large and the surge resistance is somewhat lower than that of the Bi-ZnO-based varistor. In addition, this composition contains a Pr ₆ O ₁₁ (or Pr ₂ O ₃ ) -based component, which is a precious metal series, and requires high temperature sintering (1200 ° C. or higher). Accordingly, when the multilayer chip varistor is manufactured from this composition, an internal electrode is used. As a high cost sintering components (Pd, Pt, etc.) that can be used as a large amount has a disadvantage that the manufacturing cost is high.

In order to solve the above problems, the present invention is based on the zinc oxide (ZnO) as a main component and the aforementioned Bi ₂ O ₃ , Sb ₂ O ₃ And it is to provide a ZnO-based varistor composition to replace the Pr-based composition components to enable excellent ESD properties and excellent work stability and reduced manufacturing cost.

ZnO-based varistor composition according to the present invention for achieving the above object is based on ZnO and V ₂ O ₅ , Mn ₃ O ₄ , CaCO ₃ , CuO, Cr ₂ O ₃ , La ₂ O ₃ and Y ₂ O ₃ may be included. In addition, Zn-Bi-Si-based glass frit may further include one or more selected from the group consisting of TeO ₂ , NiO, and ZrSiO ₄ .

In addition, the ZnO-based varistor composition according to the present invention may include the following composition:

ZnO 79.5 ~ 97.2 at%

V₂O₅ 0.5-2 at%

Mn₃O₄ 1-5 at%

CaCO₃ 0.5-5 at%

CuO 0.2 ~ 5 at%

Cr₂O₃ 0.2-2 at%

La₂O₃ 0.2-0.5 at%

Y₂O₃ 0.2 ~ 1 at%

In this case, at least one selected from the group consisting of Zn-Bi-Si glass frit, TeO ₂ , NiO, and ZrSiO ₄ may further include 0.1 to 0.5 at% of the total ZnO-based varistor composition.

In addition, the ZnO-based varistor composition according to the present invention may include the following composition:

ZnO 86.0 ~ 97.2 at%

V₂O₅ 0.5-2 at%

Mn₃O₄ 1-5 at%

CaCO₃ 0.5 ~ 3 at%

CuO 0.2 ~ 2 at%

Cr₂O₃ 0.2 ~ 1 at%

La₂O₃ 0.2-0.5 at%

Y₂O₃ 0.2-0.5 at%

In addition, at least one selected from the group consisting of Zn-Bi-Si-based glass frit, TeO ₂ , NiO and ZrSiO ₄ may further include 0.1 to 0.5 at% of the total ZnO-based varistor composition.

Since the ZnO-based varistor composition according to the present invention contains ZnO as a main component and includes Mn ₃ O ₄ , CaCO ₃ , CuO, Cr ₂ O ₃ , La ₂ O ₃ and Y ₂ O ₃ , conventional compositions have a high temperature of 1200 ° C. or higher. While sintering is essential, low-temperature sintering is possible around 900 ° C, grain boundary insulation is improved, nonlinearity is greatly improved, and since it does not contain Bi ₂ O ₃ , electrostatic (ESD) properties are greatly improved, and Sb _{2 is an} environmental regulation component. Since it does not contain O ₃ , work stability is secured, and high temperature sintering is required, and thus expensive electrode materials do not contain Pr-based oxides, which require a large amount of consumption, thereby reducing the manufacturing cost of the varistor, which has a very advantageous effect.

1 is a graph of the J (㎃ / cm ² ) -E (V / cm) characteristics of the varistors according to Examples 1 to 4 of the present invention.

The present inventors found that V ₂ O ₅ contained in a ZnO-based composition mainly composed of zinc oxide (ZnO) plays a role similar to that of the conventional Bi ₂ O ₃ or Pr ₆ O ₁₁ described above. That is, V ₂ O ₅ functions as a liquid sintering aid in the composition and enables low temperature sintering at around 900 ° C., obtains excellent physical properties required for varistors, and in particular, as described above. Conventional Bi ₂ O _{3 With} Serious Problems And the point of being able to replace Pr ₆ O ₁₁ . Accordingly, the ZnO-based varistor composition according to the present invention is improved in the following points:

-Conventional compositions require high temperature sintering above 1200 ° C, whereas low temperature sintering around 900 ° C is possible due to the inclusion of V ₂ O ₅ .

-The grain boundary insulation is improved and the nonlinearity is greatly improved.

-It does not contain Bi ₂ O _3, and electro-static discharge (ESD) characteristics are greatly improved.

-As it does not contain Sb ₂ O ₃ which is an environmental regulation component, work stability is secured.

- Since high temperature sintering (1200 ° C. or more) is required and expensive electrode materials do not contain Pr-based oxides, which require large amounts of consumption, the manufacturing cost of varistors is reduced.

ZnO-based varistor composition according to the present invention for this may include the following components in the following content range:

ZnO 79.5 ~ 97.2 at%

V₂O₅ 0.5-2 at%

Mn₃O₄ 1-5 at%

CaCO₃ 0.5-5 at%

CuO 0.2 ~ 5 at%

Cr₂O₃ 0.2-2 at%

La₂O₃ 0.2-0.5 at%

Y₂O₃ 0.2 ~ 1 at%

Particularly preferably, the ZnO-based varistor composition according to the present invention may include the following components in the following content ranges:

ZnO 86.0 ~ 97.2 at%

V₂O₅ 0.5-2 at%

Mn₃O₄ 1-5 at%

CaCO₃ 0.5 ~ 3 at%

CuO 0.2 ~ 2 at%

Cr₂O₃ 0.2 ~ 1 at%

La₂O₃ 0.2-0.5 at%

Y₂O₃ 0.2-0.5 at%

At this time, the phenomenon that the leakage current increases when V ₂ O ₅ is contained above the upper limit of the limited range is observed.

In addition, by containing Mn as described above, a composition having excellent overall physical properties required for the varistor can be obtained. However, when the Mn content exceeds 5 at%, the densification and grain growth of ZnO are suppressed, so that the composition is not sintered well, so that the sintered density may be lowered and the physical properties of the varistor may be lowered.

In addition, by containing Co, physical properties excellent in nonlinearity and low leakage current can be obtained. On the other hand, when the Co content exceeds 3 at%, as in the case of Mn, suppressing the densification and grain growth of ZnO to deteriorate the sintering properties, the sintered density may be lowered and the physical properties of the varistor may be lowered.

Moreover, the sintering property and grain boundary insulation property are improved by containing Cu, and the outstanding nonlinearity can be obtained. On the other hand, when the Cu content exceeds the upper limit value, the dielectric constant may be sharply lowered and nonlinearity may be lowered.

In addition, nonlinearity can be improved by containing Cr. On the other hand, when the Cr content exceeds the upper limit, an increase in leakage current and a decrease in sintering density may be caused.

In addition, the sinterability and nonlinearity can be improved by containing La. On the other hand, when the La content exceeds the upper limit, the nonlinearity may be greatly reduced.

In addition, by containing Y, grain boundary insulation can be increased and nonlinearity can be improved. On the other hand, when the Y content exceeds the upper limit value, the sintered density may be lowered.

In addition, as an embodiment of the present invention, at least one selected from the group consisting of Zn-Bi-Si-based glass frit, TeO ₂ , NiO, and ZrSiO ₄ in addition to the composition components is 0.1 to 0.5 at. May be further included in the% range.

In addition, the ZnO-based varistor composition according to the present invention can be produced by all known manufacturing methods including an oxide mixing method and the like. In addition, the composition powder thus prepared may be generally manufactured and sintered into a sheet or the like by all known thick film manufacturing methods including a doctor blade and the like, and may be prepared as a varistor having a known structure by applying electrode materials to both surfaces thereof. . Further, in general, the sheet may be manufactured as a stacked chip varistor having a known structure in which a plurality of sheets are stacked and inner and outer electrodes are formed.

Hereinafter, with reference to the accompanying drawings, preferred embodiments of the present invention will be described in detail. However, the embodiments described below are provided to help the overall understanding of the present invention, and the present invention is not limited to the following examples.

Example  1-4

end. Preparation of ZnO Varistor Composition Powder

First, it was weighed in each composition ratio as shown in Table 1 below, and mixed and pulverized by input into a ball mill containing 5 mmΦ partially stabilized zirconia (PSZ: Patially Stabilized Zirconia) with distilled water three times the weight of the weighing material. Then, dehydrated and dried to prepare a granulated powder was used as each starting material.

Example No. Sample powder (at%) ZnO V ₂ O ₅ Mn ₃ O ₄ CaCO ₃ CuO Cr ₂ O ₃ La ₂ O ₃ Y ₂ O ₃ Example 1 96.1 One One 0.5 0.5 0.5 0.2 0.2 Example 2 94.6 One One 1.0 One 1.0 0.2 0.2 Example 3 95.1 One One 1.5 0.5 0.5 0.2 0.2 Example 4 93.6 One One 2.0 One 1.0 0.2 0.2

I. Manufacture of varistors

In addition, a predetermined amount of starting material powder was put into a 10 mm Φ molding mold and manufactured by uniaxial caustic molding at a pressure of 50 MPa, followed by hydrostatic pressure (CIP: Cold Isostatic Press) treatment to prepare a disk type, which was then dried at 900 ° C. for 2 hours in air. Sintered. After the obtained sintered body was polished on both sides to have a thickness of about 1 mm, Ag paste for ohmic contact was applied to both ends of the ceramic sintered body, followed by baking for 10 minutes at 600 ° C. to form external electrodes. A test piece for characterization was produced.

All. Measurement and Evaluation of Varistor Properties

In addition, the current-voltage (IV) characteristics of the varistors of Examples 1 to 4 were measured by applying a log stair pulse waveform at room temperature using a DC current voltage power supply and a high voltage source measure Keithley 237. And J (㎃ / cm ² ) -E (V / cm) according to this are shown in FIG. 1. In addition, the varistor voltage (V _n ), which is a current-voltage characteristic parameter, was measured in units of [V / μm] as a voltage when 1 mA / cm 2 current flowed. Leakage current I _L is the current [전류 / cm ² ] measured at 80% of V _n , which means the amount of current loss under voltage applied to the varistor. Nonlinear coefficient (alpha) was calculated | required using following formula (1). The measured values are shown in Table 2 below.

식 1

Equation 1

At this time, in Formula 1 J ₁ = 1 μs / cm ² and J ₂ = 10 μs / cm ² , where E ₁ and E ₂ are the electric fields at J ₁ and J ₂ , respectively.

Example No. Relative density
(g / cm ³⁾ Vn
(V / ㎛) Nonlinear coefficient
(α) Leakage current
(㎂ / cm ² ) Example 1 96.1 1.23 65 15.2 Example 2 95.3 1.91 60 5.2 Example 3 96.5 1.28 66 1.0 Example 4 95.3 1.93 62 5.1

Referring to Table 2, the above-described embodiments of the present invention have a high density of 95.3 to 96.5 g / cm ³ , an excellent nonlinearity of 60 to 65, and a low leakage current of at least 1.0 mA / cm ² , indicating excellent varistor characteristics.

In the above-described embodiments and examples of the present invention, the powder characteristics such as the average particle size, distribution and specific surface area of the composition powder, and the purity of the raw material, the amount of impurity addition, and the sintering conditions vary slightly within the usual error range. It can be quite natural for one of ordinary skill in the art to be there.

In addition, preferred embodiments and embodiments of the present invention are disclosed for the purpose of illustration, anyone of ordinary skill in the art will be possible to various modifications, changes, additions, etc. within the spirit and scope of the present invention, such modifications Changes, additions, and the like should be considered to be within the scope of the claims.

Claims (5)

ZnO-based varistor composition comprising ZnO, V ₂ O ₅ , Mn ₃ O ₄ , CaCO ₃ , CuO, Cr ₂ O ₃ , La ₂ O ₃ and Y ₂ O ₃ . The method of claim 1,
ZnO-based varistor composition further comprises at least one selected from the group consisting of Zn-Bi-Si glass frit, TeO ₂ , NiO and ZrSiO ₄ . ZnO-based varistor composition comprising the following composition.
ZnO 79.5 ~ 97.2 at%
V₂O₅ 0.5-2 at%
Mn₃O₄ 1-5 at%
CaCO₃ 0.5-5 at%
CuO 0.2 ~ 5 at%
Cr₂O₃ 0.2-2 at%
La₂O₃ 0.2-0.5 at%
Y₂O₃ 0.2 ~ 1 at% ZnO-based varistor composition comprising the following composition.
ZnO 86.0 ~ 97.2 at%
V₂O₅ 0.5-2 at%
Mn₃O₄ 1-5 at%
CaCO₃ 0.5 ~ 3 at%
CuO 0.2 ~ 2 at%
Cr₂O₃ 0.2 ~ 1 at%
La₂O₃ 0.2-0.5 at%
Y₂O₃ 0.2-0.5 at% The method according to claim 3 or 4,
ZnO-based varistor composition, characterized in that at least one selected from the group consisting of Zn-Bi-Si-based glass frit, TeO ₂ , NiO and ZrSiO ₄ further comprises 0.1 ~ 0.5 at% compared to the entire ZnO-based varistor composition.

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