KR101152989B1 - Semiconductor Wafer including Gallium Nitride layer and Method for Manufacturing the same and Light Emitting Device - Google Patents

Abstract

Embodiments relate to a semiconductor substrate comprising a gallium nitride film, a method of manufacturing the same, and a light emitting device.
A semiconductor substrate including a gallium nitride film according to an embodiment includes a buffer layer on a substrate including a silicon substrate; An undoped Gallium Nitride film on the buffer layer; And an n-type Gallium Nitride film having a thickness of 3 μm or more on the undoped gallium nitride film.

Description

A semiconductor substrate comprising a gallium nitride film, a method of manufacturing the same, and a light emitting device {Semiconductor Wafer including Gallium Nitride layer and Method for Manufacturing the same and Light Emitting Device}

Embodiments relate to a semiconductor substrate comprising a gallium nitride film, a method of manufacturing the same, and a light emitting device.

A light emitting device (LED) may be generated by combining elements of group III and group V on a periodic table of a p-n junction diode having a characteristic in which electrical energy is converted into light energy. LED can realize various colors by adjusting the composition ratio of compound semiconductors.

Nitride semiconductors are receiving great attention in the field of optical devices and high power electronic devices due to their high thermal stability and wide bandgap energy. In particular, blue light emitting devices, green light emitting devices, and ultraviolet light emitting devices using nitride semiconductors are commercially used and widely used.

According to the prior art, a process of proceeding a light emitting device manufacturing process on a conductive substrate such as a silicon substrate has been attracting attention.

By the way, when the gallium nitride film is grown on the silicon substrate according to the prior art, it is difficult to grow the gallium nitride film thickly due to the thermal expansion coefficient and the lattice constant difference between the silicon substrate and the gallium nitride film.

For example, when a gallium nitride film is thickly formed on a silicon substrate according to the prior art, cracks, gallium nitride films, or bends at edges and centers occur on the gallium nitride film grown on the silicon substrate. There was a problem that it was difficult to grow a gallium nitride film thick.

In addition, when a thick gallium nitride film is formed on a silicon substrate according to the prior art, a high dislocation density is generated in the gallium nitride film, resulting in poor electrical characteristics and crystallinity of the gallium nitride film, thereby increasing the growth of the gallium nitride film by a predetermined thickness or more. There was a problem that can not.

In addition, according to the related art, n-type doping is performed on a gallium nitride film in a process of forming an n-type gallium nitride film on a silicon substrate. There was a problem of getting worse.

Embodiments provide a semiconductor substrate including a thick gallium nitride film having a thickness of 3 μm or more on a silicon substrate, a method of manufacturing the same, and a light emitting device.

In addition, an embodiment is to provide a semiconductor substrate, a method of manufacturing the same, and a light emitting device having a gallium nitride film having a thickness of more than 3μm on the silicon substrate without cracks.

In addition, the embodiment is to provide a semiconductor substrate including a high quality gallium nitride film having a thickness of more than 3μm, no warp, and little difference between the edge and the center, a manufacturing method and a light emitting device.

In addition, the embodiment is to provide a semiconductor substrate comprising a gallium nitride film that can contribute to the brightness of the light emitting device by increasing the thickness of the n-GaN in contact to at least 3μm when making a light emitting device, and a manufacturing method and a light emitting device do.

In addition, the embodiment is to provide a semiconductor substrate comprising a gallium nitride film having a high crystallinity of a high-doped n-type gallium nitride film having a thickness of 3 μm or more, a method of manufacturing the same and a light emitting device.

A semiconductor substrate including a gallium nitride film according to an embodiment includes a buffer layer on a substrate including a silicon substrate; An undoped Gallium Nitride film on the buffer layer; And an n-type Gallium Nitride film having a thickness of 3 μm or more on the undoped gallium nitride film.

In addition, the gallium nitride substrate manufacturing method according to the embodiment comprises the steps of forming a buffer layer on a substrate including a silicon substrate; Forming an undoped Gallium Nitride film on the buffer layer; And forming an n-type Gallium Nitride film having a thickness of 3 μm or more on the undoped gallium nitride film.

In addition, the light emitting device according to the embodiment is an n-type thickness of 3㎛ or more on a buffer layer on a substrate including a silicon substrate, an undoped Gallium Nitride film on the buffer layer and the undoped gallium nitride film A semiconductor substrate including a gallium nitride film including an n-type Gallium Nitride film; An active layer formed on the n-type gallium nitride film; And a p-type gallium nitride film formed on the active layer.

According to the semiconductor substrate including the gallium nitride film according to the embodiment, a manufacturing method thereof, and a light emitting device, a gallium nitride film having a thickness of 3 μm or more and no cracks or the like can be provided on the silicon substrate by strain control.

For example, embodiments may be fabricated by strain control in a buffer layer formed on a silicon substrate, an undoped Gallium Nitride film, and / or an n-type Gallium Nitride film. It is possible to provide a high quality gallium nitride film having a thickness of 3 µm or more on the substrate and having excellent crystallinity.

Further, the embodiment can provide a high quality gallium nitride film having a thickness of 3 μm or more by curvature control and strain control, without warping, and hardly having a step and edge step.

For example, the embodiment has a high quality that has a thickness of 3 μm or more on a silicon substrate and no warp, and almost no step between edges and centers by coverage control in an undoped gallium nitride film and / or an n-type gallium nitride film. Gallium nitride film can be provided.

In addition, the embodiment provides a gallium nitride film capable of contributing to the improvement of the brightness of the light emitting device by having a high crystallinity of a high-doped n-type gallium nitride film by strain control, coverage control, etc., and having a thickness of 3 μm or more. Can be.

1 is an exemplary cross-sectional view of a semiconductor substrate including a gallium nitride film according to the embodiment.
2 to 4 are cross-sectional views of a method of manufacturing a semiconductor substrate including a gallium nitride film according to the embodiment.
FIG. 5 is an exemplary diagram illustrating a curvature control of a semiconductor substrate including a gallium nitride film according to an embodiment. FIG.

In the description of the embodiments, it is to be understood that each layer (film), area, pattern or structure may be referred to as being "on" or "under" the substrate, each layer Quot; on "and" under "are intended to include both" directly "or" indirectly " do. Also, the criteria for top, bottom, or bottom of each layer will be described with reference to the drawings.

In the drawings, the thickness or size of each layer is exaggerated, omitted, or schematically illustrated for convenience and clarity of description. In addition, the size of each component does not necessarily reflect the actual size.

(Example)

1 is a cross-sectional view illustrating a semiconductor substrate including a gallium nitride film according to an embodiment.

The semiconductor substrate 100 including the gallium nitride film according to the embodiment includes a buffer layer 120 on the silicon substrate 110 and an undoped gallium nitride film 130 formed on the buffer layer 120. And an n-type Gallium Nitride film 140 having a thickness of 3 μm or more formed on the undoped gallium nitride film 130.

The embodiment can provide a high quality gallium nitride film having excellent crystallinity with a thickness of 3 μm or more on the silicon substrate by strain control and potential blocking in the buffer layer 120 formed on the silicon substrate.

For example, the buffer layer 120 includes a first Al _x Ga _y N film (not shown), where 0 ≦ x, 0 ≦ y, and the first Al _x Ga _y N film is reverse graded (Reverse). graded) Al _x Ga _y N film.

For example, in the first Al _x Ga _y N film, the composition ratio x of Al is maintained to have a value of zero or more, and the composition ratio y of Ga is zero at a value greater than zero (0). It can be made to be (0).

For example, the first Al _x Ga _y N film may be formed of AlN grading from AlGaN, but is not limited thereto.

Accordingly, the first Al _x Ga _y N film is an Al _p Ga _q N film (not shown) (where 0 <p, 0 <q) and an Al _p N film (not shown) on the Al _p Ga _q N film. (Where 0 &lt; p), but the first Al _x Ga _y N film does not include only these two.

In an embodiment, the buffer layer 120 formed on the silicon substrate includes a reverse graded Al _x Ga _y N film, thereby effectively preventing strain due to the lattice constant difference between the silicon substrate and the gallium nitride film formed subsequently. It is possible to provide a high quality gallium nitride film having excellent crystallinity with a thickness of 3 μm or more on the silicon substrate by controlling the crack and preventing the crack of the gallium nitride film effectively.

In addition, in the embodiment, the buffer layer 120 may include a first Al _x N _y film (not shown) formed between the silicon substrate 110 and the first Al _x Ga _y N film (where 0 ≦ x, 0). ≤ y), but is not limited thereto.

In addition, in the embodiment, the buffer layer 120 may include a first Si _x N _y film (not shown) formed between the silicon substrate 110 and the first Al _x Ga _y N film (where 0 ≦ x, 0). ≤y) may be further included, but is not limited thereto. The first Si _x N _y film may be formed on the upper side, the lower side, or the upper and lower sides of the first Al _x N _y layer, but is not limited thereto.

In an embodiment, the first Si _x N _y film effectively controls strain due to a difference in thermal expansion coefficient between a silicon substrate and a gallium nitride film formed thereafter, and blocks dislocations from the silicon substrate. And bending, it is possible to provide a high quality gallium nitride film having a crystallinity of 3 μm or more on a silicon substrate.

In an embodiment, the undoped gallium nitride film 130 may be formed in one or more periods. For example, the undoped gallium nitride film 130 may be formed of a plurality of layers 1 to 5 times, but is not limited thereto.

The undoped gallium nitride film 130 may be formed to a thickness of about 0.5 μm to about 2.5 μm to contribute to the improvement of crystallinity of the gallium nitride film formed thereafter.

The embodiment may further include a second Al _x N _y film (not shown) formed on the buffer layer 120 (where 0 ≦ x, 0 ≦ y), but is not limited thereto. The second Al _x N _y film (not shown) may be formed in a plurality of cycles, but is not limited thereto. For example, the second Al _x N _y film may be formed between the layers in which the undoped gallium nitride film 130 is formed in a plurality of cycles, but is not limited thereto.

An embodiment may further include a second Si _x N _y film (not shown) formed on the buffer layer 120 (but not limited to 0 ≦ x, 0 ≦ y). The second Si _x N _y film may be formed between each layer formed in the plurality of cycles, but is not limited thereto.

In addition, the second Si _x N _y layer may be formed on the upper side, the lower side, or the upper and lower sides of the second Al _x N _y layer, but is not limited thereto.

In an embodiment, the second Si _x N _y film effectively controls strain due to a difference in thermal expansion coefficient between a silicon substrate and a gallium nitride film formed thereafter, and blocks dislocations from the silicon substrate. And bending, it is possible to provide a high quality gallium nitride film having a crystallinity of 3 μm or more on a silicon substrate.

According to the embodiment, it is possible to provide a high quality gallium nitride film having a thickness of 3 μm or more and no cracks or the like on a silicon substrate.

Further, according to the embodiment, a high quality gallium nitride film having no V-pit or the like on the surface of the gallium nitride film formed on the silicon substrate can be obtained.

The n-type gallium nitride layer 140 may be an n-type gallium nitride layer having a thickness of about 3 μm or more.

The n-type gallium nitride layer 140 may be doped with n-type by n-type doping, for example, doping of silicon (Si) ions, and may be doped at a concentration of 5E18 / cm ³ or more, thereby contributing to the performance improvement of the light emitting device. Can be. For example, the n-type gallium nitride film 140 may provide a high-quality gallium nitride film having excellent crystallinity while maintaining a thickness of about 3 μm or more while being doped with a concentration of about 7E18 / cm ³ .

The n-type gallium nitride layer 140 may be doped by a modulation doping method, but is not limited thereto. For example, the growth and doping of the n-type gallium nitride layer 140 may be performed at a ratio of 4-18: 1, but is not limited thereto. According to the embodiment, by improving the doping method, it is possible to prevent cracks generated during doping and to improve the doping level.

Further, the embodiment can provide a gallium nitride film capable of contributing to the improvement of the brightness of the light emitting device by having a high crystallinity of the n-type gallium nitride film doped with high concentration such as coverage control and having a thickness of 3 μm or more. For example, since the curvature of the gallium nitride film on the silicon substrate is in the range of about -100 (1 / km) to about +100 (1 / km), the curvature has a thickness of 3 μm or more and no warpage and an edge It is possible to provide a high quality gallium nitride film with little step difference between the center and the center.

In addition, in the embodiment, the crystallinity level of the n-type gallium nitride film 140 having a thickness of 3 μm or more may be high quality such that (002) is 500 arcsec or less, and (102) is 900 arcsec or less.

For example, in an embodiment, the crystallinity level of the n-type gallium nitride film 140 on the silicon substrate is about c-axis, (002) property is about 450 arcsec, a-axis property, and (102) property is about 800 arcsec. Obtained high quality but not limited thereto.

The embodiment further includes a second Al _x Ga _y N film (not shown) on the buffer layer 120, where 0≤x, 0≤y to control strain and crack room in the n-type gallium nitride film. can do.

The second Al _x Ga _y N film (not shown) may be formed in a plurality of cycles, and may be formed between the n-type gallium nitride film 140 formed in plurality, but is not limited thereto.

The second Al _x Ga _y N film may be formed to a thickness of about 10nm to about 100nm, but is not limited thereto.

The second (not shown) Al _x Ga _y N film is a first GaN layer, a first AlGaN layer (not shown), and a first AlN layer (not shown), the first group of the second Al _x Ga _y N film containing (Not shown) and a second AlN film (not shown), a second AlGaN film (not shown), and a second GaN film (not shown) on the second Al _x Ga _y N film of the first group. A second group of Al _x Ga _y N films (not shown) may be included, but is not limited thereto.

The second Al _x Ga _y N film may be formed by including trimethyl aluminum gas (TMA) gas and trimethyl gallium gas (TMG), but is not limited thereto.

According to the embodiment, the second Al _x Ga _y N film is formed between the n-type gallium nitride film 140 to perform strain control and crack prevention in the n-type gallium nitride film so as to have a thickness of 3 μm or more on the silicon substrate. A high quality gallium nitride film having excellent properties can be provided.

The light emitting device according to the embodiment may be manufactured by forming an active layer (not shown) and a p-type gallium nitride film (not shown) on the semiconductor substrate 100.

For example, the light emitting device according to the embodiment includes a buffer layer 120 on the silicon substrate 110, an undoped Gallium Nitride film 130, and the undoped Gallium Nitride film 130 formed on the buffer layer 120. An active layer (n-type Gallium Nitride film 140) having a thickness of 3㎛ or more formed on the gallium nitride film 130, and formed on the n-type gallium nitride film 140 (not shown) ) And a p-type gallium nitride film (not shown) formed on the active layer.

The semiconductor substrate 100 may be the semiconductor substrate 100 described above.

The n-type gallium nitride film 140 may be formed of any one or more of GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN, AlGaAs, InGaAs, AlInGaAs, GaP, AlGaP, InGaP, AlInGaP, InP.

The active layer () may be formed of at least one of a single quantum well structure, a multi quantum well structure (MQW), a quantum-wire structure, or a quantum dot structure.

The p-type gallium nitride film is a p-type dopant is doped with a Group 3 -5 V compound semiconductor, for _{example, In x Al y Ga 1 -x-} y N (0≤x≤1, 0≤y≤1, 0≤x + and a semiconductor material having a compositional formula of y ≦ 1). The p-type gallium nitride film may include Mg, Zn, Ca, Sr, Ba, etc. as a dopant.

According to the semiconductor substrate including the gallium nitride film according to the embodiment, a manufacturing method thereof, and a light emitting device, a gallium nitride film having a thickness of 3 μm or more and no cracks or the like can be provided on the silicon substrate by strain control.

For example, embodiments may be fabricated by strain control in a buffer layer formed on a silicon substrate, an undoped Gallium Nitride film, and / or an n-type Gallium Nitride film. It is possible to provide a high quality gallium nitride film having a thickness of 3 µm or more on the substrate and having excellent crystallinity.

Further, the embodiment can provide a high quality gallium nitride film having a thickness of 3 μm or more by curvature control and strain control, without warping, and hardly having a step and edge step.

For example, the embodiment has a high quality that has a thickness of 3 μm or more on a silicon substrate and no warp, and almost no step between edges and centers by coverage control in an undoped gallium nitride film and / or an n-type gallium nitride film. Gallium nitride film can be provided.

In addition, the embodiment provides a gallium nitride film capable of contributing to the improvement of the brightness of the light emitting device by having a high crystallinity of a high-doped n-type gallium nitride film by strain control, coverage control, etc., and having a thickness of 3 μm or more. Can be.

Hereinafter, a method of manufacturing a semiconductor substrate including a gallium nitride film according to an embodiment will be described with reference to FIGS. 2 to 4.

First, as shown in FIG. 2, a buffer layer 120 is formed on a substrate. In addition, the substrate may include any one or more of silicon substrate 110, sapphire (Al ₂ O ₃ ) substrate, silicon carbide substrate (SiC), but is not limited thereto. In the embodiment, the substrate is described with respect to the silicon substrate 110 but is not limited thereto.

The embodiment can provide a high quality gallium nitride film having excellent crystallinity with a thickness of 3 μm or more on the silicon substrate by strain control and potential blocking in the buffer layer 120 formed on the silicon substrate.

For example, the buffer layer 120 may include forming a first Al _x Ga _y N film (not shown), where 0 ≦ x, 0 ≦ y, and the first Al _x Ga _y N film may be formed. It may comprise a reverse graded Al _x Ga _y N film.

For example, in the reverse graded Al _x Ga _y N film, in the first Al _x Ga _y N film, the composition ratio x of Al is maintained to have a value of zero or more, and the composition ratio of Ga ( y) may be made zero at values greater than zero.

For example, the first Al _x Ga _y N film may be formed of AlN grading from AlGaN, but is not limited thereto.

For example, in forming the first Al _x Ga _y N film, in the flow rate control of trimethyl aluminum gas (TMA) gas and trimethyl gallium gas (TMG), the trimethyl aluminum gas (TMA) gas continues to exist even if its flow rate changes. And the flow rate of trimethyl gallium gas (TMG) is initially present, and may be zero at the end of the first Al _x Ga _y N film process.

Accordingly, the first Al _x Ga _y N film is an Al _p Ga _q N film (not shown) (where 0 <p, 0 <q) and an Al _p N film (not shown) on the Al _p Ga _q N film. (Where 0 &lt; p), but the first Al _x Ga _y N film does not include only these two.

In an embodiment, the buffer layer 120 formed on the silicon substrate includes a reverse graded Al _x Ga _y N film, thereby effectively preventing strain due to the lattice constant difference between the silicon substrate and the gallium nitride film formed subsequently. It is possible to provide a high quality gallium nitride film having excellent crystallinity with a thickness of 3 μm or more on the silicon substrate by controlling the crack and preventing the crack of the gallium nitride film effectively.

In addition, the buffer layer 120 forms a first Al _x N _y film (not shown) between the silicon substrate 110 and the first Al _x Ga _y N film (where 0 ≦ x, 0 ≦ y). The method may further include, but is not limited to. For example, the embodiment may effectively block a potential transition from the silicon substrate by forming a first Al _x N _y film on the silicon substrate 110 at about 900 ° C to about 13000 ° C.

In addition, the buffer layer 120 forms a first Si _x N _y film (not shown) between the silicon substrate 110 and the first Al _x Ga _y N film (where 0 ≦ x, 0 ≦ y). The method may further include, but is not limited to. The first Si _x N _y film may include, but is not limited to, silane gas (Si _n H _{2n + 2} ) and nitrogen gas (N ₂ ). The first Si _x N _y film may be formed on the upper side, the lower side, or the upper and lower sides of the first Al _x N _y layer, but is not limited thereto.

In an embodiment, the first Si _x N _y film effectively controls strain due to a difference in thermal expansion coefficient between a silicon substrate and a gallium nitride film formed thereafter, and blocks dislocations from the silicon substrate. And bending, it is possible to provide a high quality gallium nitride film having a crystallinity of 3 μm or more on a silicon substrate.

Next, as shown in FIG. 3, an undoped Gallium Nitride film 130 is formed on the buffer layer 120.

In an embodiment, the undoped gallium nitride film 130 may be formed in one or more periods. For example, the undoped gallium nitride film 130 may be formed of a plurality of layers 1 to 5 times, but is not limited thereto.

When the undoped gallium nitride film 130 is formed, the undoped gallium nitride film 130 is maintained by using a TMG and NH ₃ gas to maintain a Group 5 element-to-Group 3 element ratio (V / III ratio) of about 600 to about 1600. It may form a but is not limited thereto.

The undoped gallium nitride film 130 may be formed to a thickness of about 0.5 μm to about 2.5 μm to contribute to the improvement of crystallinity of the gallium nitride film formed thereafter.

An embodiment may further include forming a second Al _x N _y film (not shown) on the buffer layer 120 (where 0 ≦ x, 0 ≦ y), but is not limited thereto. For example, the embodiment may effectively block the dislocation by forming the second Al _x N _y film on the buffer layer 120 at about 700 ° C to about 900 ° C. The second Al _x N _y film (not shown) may be formed in a plurality of cycles, but is not limited thereto. For example, the second Al _x N _y film may be formed between the layers in which the undoped gallium nitride film 130 is formed in a plurality of cycles, but is not limited thereto.

In addition, the embodiment may further include forming a second Si _x N _y film (not shown) on the buffer layer 120 (where 0 ≦ x, 0 ≦ y), but is not limited thereto. The second Si _x N _y film may include, but is not limited to, silane gas (Si _n H _{2n + 2} ) and nitrogen gas (N ₂ ). The second Si _x N _y film may be formed between each layer formed in the plurality of cycles, but is not limited thereto.

In addition, the second Si _x N _y layer may be formed on the upper side, the lower side, or the upper and lower sides of the second Al _x N _y layer, but is not limited thereto.

In an embodiment, the second Si _x N _y film effectively controls strain due to a difference in thermal expansion coefficient between a silicon substrate and a gallium nitride film formed thereafter, and blocks dislocations from the silicon substrate. And bending, it is possible to provide a high quality gallium nitride film having a crystallinity of 3 μm or more on a silicon substrate.

Next, as shown in FIG. 4, an n-type gallium nitride film 140 is formed on the undoped gallium nitride film 130. The n-type gallium nitride layer 140 may be an n-type gallium nitride layer having a thickness of about 3 μm or more.

The n-type gallium nitride layer 140 may be doped with n-type by n-type doping, for example, doping of silicon (Si) ions, and may be doped to a concentration of 5E18 / cm ³ or more, thereby contributing to the performance improvement of the light emitting device. Can be.

For example, in the embodiment, the n-type gallium nitride film 140 may provide a high quality gallium nitride film having excellent crystallinity while maintaining a thickness of about 3 μm or more while being doped with a concentration of 7E18 / cm ³ .

The n-type gallium nitride layer 140 may be doped by a modulation doping method, but is not limited thereto. For example, the growth and doping of the n-type gallium nitride layer 140 may be performed at a ratio of 4-18: 1, but is not limited thereto. According to the embodiment, by improving the doping method, it is possible to prevent cracks generated during doping and to improve the doping level.

FIG. 5 is a diagram illustrating a control of a curvature of a semiconductor substrate including a gallium nitride film according to an embodiment.

The embodiment can provide a gallium nitride film capable of contributing to the luminance improvement of a light emitting device by having a high crystallinity of a high concentration doped n-type gallium nitride film by coverage control or the like and having a thickness of 3 μm or more. For example, since the curvature of the gallium nitride film on the silicon substrate is in the range of about -100 (1 / km) to about +100 (1 / km), the curvature has a thickness of 3 μm or more and no warpage and an edge It is possible to provide a high quality gallium nitride film with little step difference between the center and the center.

In addition, the embodiment of the present invention provides that the curvature of the n-type gallium nitride film 140 is about − when forming the n-type gallium nitride film 140 having a thickness of 3 μm or more on the undoped gallium nitride film. By controlling to a range of 300 (1 / km) or less, the curvature of the gallium nitride film on the silicon substrate after cooling is in the range of about -100 (1 / km) to about +100 (1 / km). It is possible to provide a high quality gallium nitride film having a thickness of 3 μm or more and no warping and almost no step difference between the edge and the center.

In addition, in the embodiment, the crystallinity level of the n-type gallium nitride film 140 having a thickness of 3 μm or more may be high quality such that (002) is 500 arcsec or less, and (102) is 900 arcsec or less.

For example, in an embodiment, the crystallinity level of the n-type gallium nitride film 140 on the silicon substrate is about c-axis, (002) property is about 450 arcsec, a-axis property, and (102) property is about 800 arcsec. Got high quality.

In addition, the embodiment further comprises the step of forming a second Al _x Ga _y N film (not shown) (0≤x, 0≤y) on the buffer layer 120, strain in the n-type gallium nitride film Can control and crack room area.

The second Al _x Ga _y N film (not shown) may be formed in a plurality of cycles, and may be formed between the n-type gallium nitride film 140 formed in plurality, but is not limited thereto.

The second Al _x Ga _y N film may be formed to a thickness of about 10nm to about 100nm, but is not limited thereto.

The second (not shown) Al _x Ga _y N film is a first GaN layer, a first AlGaN layer (not shown), and a first AlN layer (not shown), the first group of the second Al _x Ga _y N film containing (Not shown) and a second AlN film (not shown), a second AlGaN film (not shown), and a second GaN film (not shown) on the second Al _x Ga _y N film of the first group. A second group of Al _x Ga _y N films (not shown) may be included, but is not limited thereto.

The second Al _x Ga _y N film may be formed by including trimethyl aluminum gas (TMA) gas and trimethyl gallium gas (TMG), but is not limited thereto.

According to the embodiment, the second Al _x Ga _y N film is formed between the n-type gallium nitride film 140 to perform strain control and crack prevention in the n-type gallium nitride film so as to have a thickness of 3 μm or more on the silicon substrate. A high quality gallium nitride film having excellent properties can be provided.

According to the semiconductor substrate including the gallium nitride film according to the embodiment, a manufacturing method thereof, and a light emitting device, a gallium nitride film having a thickness of 3 μm or more and no cracks or the like can be provided on the silicon substrate by strain control.

For example, embodiments may be fabricated by strain control in a buffer layer formed on a silicon substrate, an undoped Gallium Nitride film, and / or an n-type Gallium Nitride film. It is possible to provide a high quality gallium nitride film having a thickness of 3 µm or more on the substrate and having excellent crystallinity.

Further, the embodiment can provide a high quality gallium nitride film having a thickness of 3 μm or more by curvature control and strain control, without warping, and hardly having a step and edge step.

For example, the embodiment has a high quality that has a thickness of 3 μm or more on a silicon substrate and no warp, and almost no step between edges and centers by coverage control in an undoped gallium nitride film and / or an n-type gallium nitride film. Gallium nitride film can be provided.

In addition, the embodiment provides a gallium nitride film capable of contributing to the improvement of the brightness of the light emitting device by having a high crystallinity of a high-doped n-type gallium nitride film by strain control, coverage control, etc., and having a thickness of 3 μm or more. Can be.

The features, structures, effects and the like described in the embodiments are included in at least one embodiment and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects, and the like illustrated in the embodiments may be combined or modified with respect to other embodiments by those skilled in the art to which the embodiments belong. Accordingly, the contents of such combinations and modifications should be construed as being included in the scope of the embodiments.

In addition, the above description has been made with reference to the embodiments, which are merely examples and are not intended to limit the embodiments, and those skilled in the art to which the embodiments belong may not be exemplified above without departing from the essential characteristics of the embodiments. It will be understood that various modifications and applications are possible. For example, each component specifically shown in the embodiment can be modified. And differences relating to these modifications and applications will have to be construed as being included in the scope of the embodiments defined in the appended claims.

Claims (22)

A buffer layer on a substrate including a silicon substrate;
An undoped Gallium Nitride film on the buffer layer; And
And an n-type Gallium Nitride film having a thickness of 3 μm or more on the undoped gallium nitride film.
The buffer layer includes a first AlxGayN film (where 0 ≦ x, 0 ≦ y), and the first AlxGayN film includes a reverse graded AlxGayN film. delete delete The method according to claim 1,
The first Al _x Ga _y N film,
Al _p Ga _q N films (where 0 <p, 0 <q); And
And a gallium nitride film comprising an Al _p N film (where 0 &lt; p) on the Al _p Ga _q N film. The method according to claim 1,
And a gallium nitride film further comprising a second Si _x N _y film (where 0 ≦ x, 0 ≦ y) between the buffer layer and the undoped gallium nitride film. The method according to claim 1,
And a gallium nitride film further comprising a second Al _x Ga _y N film (where 0 ≦ x, 0 ≦ y) between the undoped gallium nitride film and the n-type gallium nitride film. The method of claim 6,
The second Al _x Ga _y N film,
A second Al _x Ga _y N film of the first group including the first GaN film, the first AlGaN film, and the first AlN film; And
Gallium containing; a second AlN layer, a second AlGaN layer and the second including GaN film a second Al _x Ga _y N layer of a second group formed on the first-second Al _x Ga _y N layer of A semiconductor substrate comprising a film. The method according to claim 1,
And a gallium nitride film having a curvature of the gallium nitride film on the silicon substrate in a range of -100 (1 / km) to +100 (1 / km). The method according to claim 1,
The n-type gallium nitride film having a thickness of 3 µm or more on the undoped gallium nitride film,
5E18 / cm ³ or higher concentration A semiconductor substrate comprising a gallium nitride film. The method according to claim 1,
The crystalline level of the n-type gallium nitride film having a thickness of 3 μm or more on the undoped gallium nitride film includes a gallium nitride film having a (002) value of 500 arcsec or less and (102) of 900 arcsec or less. The method according to claim 1,
The substrate
A semiconductor substrate comprising at least one of a sapphire (Al ₂ O ₃ ) substrate and a silicon carbide substrate (SiC). Forming a buffer layer on a substrate comprising a silicon substrate;
Forming an undoped Gallium Nitride film on the buffer layer; And
Forming an n-type Gallium Nitride film having a thickness of 3 μm or more on the undoped gallium nitride film;
The forming of the buffer layer may include forming a first AlxGayN film (where 0 ≦ x, 0 ≦ y), and the first AlxGayN film may include a reverse graded AlxGayN film. . delete delete The method of claim 12,
In the first Al _x Ga _y N film, the composition ratio x of Al is maintained to have a value greater than or equal to zero, and the composition ratio y of Ga is zero at a value greater than zero. A method of manufacturing a semiconductor substrate comprising a gallium nitride film. The method of claim 12,
After the buffer layer is formed,
A method of manufacturing a semiconductor substrate comprising a gallium nitride film further comprising forming a second Si _x N _y film (where 0 ≦ x, 0 ≦ y) on the buffer layer. The method of claim 12,
After the undoped gallium nitride film is formed,
And forming a second Al _x Ga _y N film (where 0 ≦ x, 0 ≦ y) on the undoped gallium nitride film. The method of claim 17,
Forming the second Al _x Ga _y N film,
Forming a first group of second Al _x Ga _y N films including a first GaN film, a first AlGaN film, and a first AlN film; And
Forming a second Al _x Ga _y N film of a second group including a second AlN film, a second AlGaN film, and a second GaN film on the second Al _x Ga _y N film of the first group; A method of manufacturing a semiconductor substrate comprising a gallium nitride film. 13. The method of claim 12,
In the step of forming an n-type gallium nitride film of 3㎛ or more thickness on the undoped gallium nitride film,
The n-type gallium nitride film is 5E18 / cm³ More than concentration A method of manufacturing a semiconductor substrate comprising a gallium nitride film. The method of claim 12,
Controlling the curvature of the n-type gallium nitride film to be in the range of -300 (1 / km) or less when forming an n-type gallium nitride film having a thickness of 3 µm or more on the undoped gallium nitride film; And
After cooling the n-type gallium nitride film on the silicon substrate, the curvature of the gallium nitride film on the silicon substrate is controlled in the range of -100 (1 / km) to about +100 (1 / km). A method of manufacturing a semiconductor substrate comprising a film. A buffer layer on a substrate including a silicon substrate, an undoped Gallium Nitride film on the buffer layer, and an n-type Gallium Nitride film having a thickness of 3 μm or more on the undoped gallium nitride film a semiconductor substrate comprising a gallium nitride film including a film);
An active layer formed on the n-type gallium nitride film; And
P-type gallium nitride film formed on the active layer;
The buffer layer includes a first AlxGayN layer (where 0 ≦ x, 0 ≦ y), and the first AlxGayN layer includes a reverse graded AlxGayN layer. delete

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