KR101152889B1 - Supporting device for semiconductor package - Google Patents

Abstract

PURPOSE: A semiconductor package support apparatus is provided to prevent deformation by improving durability, thereby improving lifetime. CONSTITUTION: A semiconductor support device includes a laminated structure. The laminated structure is comprised of an insulating layer(530) and an elastic layer(520). The insulating layer maintains an insulating state with an external device which is closely located or attached on a surface. An elastic layer prevents deformation or damage of the insulating layer. A rigid layer(510) maintains strength of the outermost or inner layer of the laminated structure.

Description

Semiconductor package support device {SUPPORTING DEVICE FOR SEMICONDUCTOR PACKAGE}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor package support device used in a semiconductor package inspection process, and more particularly, to a semiconductor package support device for supporting a semiconductor package and providing good contact between the semiconductor package and the tester.

In general, a semiconductor device manufactured by cutting a wafer, mounting a semiconductor chip obtained from the frame, bonding the wire with a wire, and then molding the encapsulant is not used as a single component, but a plurality of components are used as a single component. It is produced by forming a module. Therefore, if a failure occurs in one component, it may bring a defect in the whole module, which may cause a decrease in the reliability of the product. Therefore, the semiconductor device is shipped after minimizing the defective rate through a test that inspects an electrical operation state. It is common.

In a semiconductor test process, a semiconductor device cut into package units is vacuum-adsorbed by a picker unit to be inserted into a semiconductor package insert, and connected to a tester for testing the semiconductor device in the semiconductor package insert. In particular, in the case of a ball grid array (BGA) type semiconductor package, a support device having a groove in which the solder ball of the semiconductor package can be placed may be located at the bottom of the semiconductor package insert, where the solder ball is fixed without being spaced apart on the semiconductor package insert. To make it possible.

1 and 2 are a perspective view and an exploded perspective view of a semiconductor package insert for inspecting a BGA semiconductor device according to the prior art. 1 and 2, the semiconductor package insert 100 includes a body 110, a pressing device 120, a support device 130, and a fixing device 140, on which a BGA semiconductor device may be mounted. .

The body 110 represents the overall frame structure of the semiconductor package insert, and a semiconductor accommodating groove 111 is formed in the center portion of the body 110 so as to mount and detach the semiconductor device. The lower portion of the semiconductor accommodating groove 111 is coupled to the support device 130 through a coupling means, and the semiconductor element is accommodated in the semiconductor accommodating groove 111 and seated on the support device 130. The width of the semiconductor accommodating groove 111 is narrowed toward the lower side, which is to allow the edge of the semiconductor element to slide downward from the upper portion of the semiconductor accommodating groove 111 to be seated in the support device 130.

The support device 130 is a flat plate having a very thin thickness, and allows the semiconductor device to be supported in the reaction body accommodating groove 111 to be connected to the tester.

A fixing device 140 for fixing a semiconductor device introduced into the semiconductor receiving groove 111 is coupled to both side walls of the semiconductor receiving groove 111.

The pressurizing device 120 serves to manipulate the fixing device 140 to fix the semiconductor element to the semiconductor receiving groove 111. When the pressing device 120 is pressed, the fixing device 140 is moved to both sides. When the pressure is released, the pressure is removed to return to the original position and the semiconductor element can be fixed in the semiconductor accommodating groove 111.

In such a semiconductor package insert, the conventional support device 130 is used by coating an insulating coating layer or an antistatic coating layer of a thin film on stainless steel (SUS: Steel Us Stainless). However, a problem of the stainless steel-based support device 130 is that the coating layer of the stainless steel may be peeled off due to hard objects such as solder balls, or the coating layer may be peeled off due to warpage. As the surface coating layer of the stainless steel is peeled off, the solder balls may come into contact with the stainless steel, causing a short circuit problem. In addition, the solder ball may be damaged by stainless steel, and furthermore, a problem may occur that the semiconductor package may be damaged during the semiconductor package test process.

As a further improvement, a method of manufacturing the support device 130 from a polyimide (PI) film is used. The polyimide film is an insulating material, has the characteristics of being able to effectively withstand high temperatures, being thin and excellent in flexibility. However, when the support device 130 is manufactured from a polyimide film, the flexibility is excellent, but the rigidity is weak, and when it is used for a long time, it is easily deformed due to the ductility, and the reliability is deteriorated. The problem is that the solder ball of the package cannot be properly accommodated and the life is short.

Furthermore, in the case of the polyimide film, static electricity may be generated by contacting and rubbing with the solder ball, which is not suitable for electrical testing of semiconductor devices.

SUMMARY OF THE INVENTION An object of the present invention is to provide a semiconductor package support device having a high strength, excellent elasticity and resilience, which is not easily deformed and has a long lifetime.

Furthermore, another object of the present invention is to provide a support device that prevents disconnection and electrostatic phenomena between the terminal portion of the semiconductor package and the support device or the contact and enables the terminal part and the contact of the semiconductor package to be correctly contacted and tested so that the semiconductor package can be accurately tested. have.

According to an aspect of the present invention, there is provided a semiconductor package supporting apparatus, comprising: an insulating layer for maintaining an insulation state with an external device in contact with or positioned in proximity to the surface; And a lamination structure including a plurality of layers including an elastic layer to prevent deformation or damage of the insulating layer.

In this case, the elastic layer may be laminated on one or both surfaces of the insulating layer, or the insulating layer may be laminated on one or both surfaces of the elastic layer.

On the other hand, the outermost layer or the inside of the laminated structure may further include a rigid layer for maintaining strength, the rigid layer is composed of any one selected from a composite material including a metal, an insulating material, a metal and an insulating material.

Semiconductor package support device according to another embodiment of the present invention is a metal rigid layer for maintaining strength; And a lamination structure including a plurality of layers that protect the metal rigid layer and include an elastic layer for insulating the external device positioned in contact with or adjacent to the side of the metal rigid layer. In addition, in order to maintain an insulation state with an external device in contact with or in close proximity to the surface, an insulation layer may be further included in the outermost or inside of the laminated structure.

In this case, the elastic layer may be laminated on one or both surfaces of the metal rigid layer, or the metal rigid layer may be laminated on one or both surfaces of the elastic layer.

Further, in order to prevent static electricity generated between the support device and an external device which is in contact with or in close proximity to the support device, an antistatic layer may be further included on or in contact with the support device. The electromagnetic shielding layer may be further included in the outermost part or inside of the laminated structure in order to remove the electromagnetic interference from the external device located in close proximity.

The elastic layer is formed of at least one synthetic resin selected from silicon, urethane, and epoxy, and the metal rigid layer is formed to be more inwardly escaped from the side of the laminated structure than the elastic layer. In addition, the elastic layer may be formed integrally with the rigid layer or the metal rigid layer.

On the other hand, a part of the terminal portion provided in the semiconductor element is inserted into the ball receiving hole for fixing the semiconductor element; And a through hole in which another portion of the terminal portion is accommodated.

The support device may be coupled to one side of the semiconductor package insert or coupled to one side of the test socket or test substrate.

In addition, the support device guides the terminal portion and the contact to contact the terminal portion of the semiconductor element and the contact of the tester in the plurality of holes or the through hole, and at least one of the insulating layer, the metal rigid layer, and the elastic layer Can be stacked overlapping.

According to the present invention according to the above configuration, it is possible to provide a semiconductor package supporting apparatus that is high in yield and low in manufacturing cost, and which is not easily deformed by high strength and external pressure.

In addition, the flexibility and insulation may prevent static and disconnection between the solder ball of the semiconductor package and the supporting device, thereby providing a semiconductor package insert for accurate testing of the semiconductor package.

1 is a perspective view of a semiconductor package insert for inspecting a BGA semiconductor device according to the prior art.
2 is an exploded perspective view of a semiconductor package insert for inspecting a BGA semiconductor device according to the prior art.
3 is a plan view of a semiconductor package insert support apparatus according to an embodiment of the present invention.
4A to 4C are cross-sectional views of the supporting apparatus formed of a laminated structure according to an embodiment of the present invention.
5A to 5C are cross-sectional views of support devices formed in a laminated structure according to another embodiment of the present invention.
6 is a cross-sectional view illustrating a process of forming a laminated structure of a support apparatus according to another embodiment of the present invention.
7A to 7C are views for explaining contact between a solder ball of a semiconductor package and a contact of a tester in a supporting device.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. Prior to this, terms or words used in the specification and claims should not be construed as having a conventional or dictionary meaning, and the inventors should properly explain the concept of terms in order to best explain their own invention. Based on the principle that can be defined, it should be interpreted as meaning and concept corresponding to the technical idea of the present invention. Therefore, the embodiments described in this specification and the configurations shown in the drawings are merely the most preferred embodiments of the present invention and do not represent all the technical ideas of the present invention. Therefore, It is to be understood that equivalents and modifications are possible.

3 is a plan view of a semiconductor package support apparatus according to an embodiment of the present invention. Referring to FIG. 3, the support device 300 includes a through hole 310 and a ball receiving hole 320 to guide the solder ball of the semiconductor device.

The through hole 310 is formed to have a large area so that a plurality of solder balls provided in the semiconductor device may contact the tester. In particular, the through hole 310 may be provided in a rectangular shape at the center of the support device 300.

The ball receiving hole 320 is provided at both sides of the through hole 310 or is provided at the corners of the support device 300, so that the solder ball of the semiconductor element is introduced into the ball receiving hole 320 to correctly contact the contact of the tester. To guide. One or more solder balls are accommodated in each ball receiving hole 320, and the remaining solder balls except the solder balls introduced into the ball receiving hole 320 are accommodated in the through holes 310 to be in contact with the tester.

4A to 4C are cross-sectional views taken along line a-a 'of the support device shown in FIG. 3, and show a support device having a laminated structure according to an embodiment of the present invention.

Referring to FIG. 4A, the support device is formed in a laminated structure by centering the insulating layer 410 and stacking the elastic layer 420 on both surfaces of the insulating layer 410. Inserting the insulating layer 410 between the elastic layer 420 is to increase the elasticity or rigidity of the support device to prevent the support device is stretched or bent, that is, to prevent deformation or damage of the support device.

The insulating layer 410 serves to maintain an insulating state between the supporting device and an external device (eg, a solder ball of a semiconductor element) which is in contact with or in close proximity to the supporting device. The insulating layer 410 has a high wear resistance. It is preferable to use a material such as a polyimide film, but is not limited thereto, and any material having insulating properties may be used. For example, thin film vinyl materials, engineering plastics, papers, tapes, and the like may be used. If the support device is composed of only the insulating layer 410, there is a problem in that the support device is torn or deformed and broken in the process of handling the support device during the process. For example, when a support device is used for guiding between a semiconductor package and a contact, if misalignment occurs between components, the support device is deformed or torn by solder balls or contacts of the semiconductor device. Cases often occur.

The elastic layer 420 is to solve the problems of the conventional support device as described above, by increasing the elasticity or rigidity of the support device by placing the elastic layer 420 on both sides of the insulating layer 410. Can prevent deformation or damage of the support device caused by stretching or bending. The elastic layer 420 is preferably formed of at least one synthetic resin selected from silicon, urethane, and epoxy, but is not limited thereto. Any material having elastic properties may be used. In addition, the elastic layer 420 may be manufactured by including one or more materials of an antistatic additive, carbon nanotubes, conductive powder in order to provide a variety of functionality.

Meanwhile, as shown in FIG. 4B, the insulating layer 410 may be positioned on both sides of the elastic layer 420 with respect to the elastic layer 420. As shown in FIG. 4A, when the elastic layer 420 is stacked around the insulating layer 410, the elasticity and strength of the supporting device are greatly improved, thereby preventing the supporting device from being deformed or broken by external pressure. On the contrary, when the insulating layer 410 is stacked around the elastic layer 420 as shown in FIG. 4B, the disconnection with the solder ball may be reliably blocked.

In addition, in FIG. 4A, the elastic layer 420 is stacked on both sides of the insulating layer 410, and in FIG. 4B, the insulating layer 410 is stacked on both sides of the elastic layer 420, but the insulating layer 410 is not necessarily stacked on both sides. The lamination of each layer on any one surface should also be considered to be included in the present invention.

In this case, as illustrated in FIG. 4C, a rigid layer 430 for maintaining strength may be further included in the outermost part or the inside of the laminated structure constituting the support device illustrated in FIGS. 4A and 4B. Forming a rigid layer 430 in the outermost or inside of the laminated structure, instead of reducing the ductility of the support device to increase the rigidity to prevent deformation or excessive tension of the elastic layer or insulating layer and to increase the reliability of the support device to be. The rigid layer 430 may be formed of a metal, an insulating material, or a composite material including the metal and the insulating material, but is not limited thereto. Any material that may increase the rigidity of the supporting device may be used. For example, the rigid layer 430 may be made of a thin metal material such as copper, titanium, or an alloy thereof, and may be made of high strength synthetic resins such as engineering plastics, ceramics, plastics, fine fibers, paper, hard epoxy, or the like. It may be formed as. In addition, the rigid layer may be formed by bonding a metal material to a heat resistant plastic film such as polyester (PET) or polyimide (PI), which is a flexible insulating material used in a flexible printed circuit (FPCB). The surface of the rigid layer 430 may be plated with a plating material, or may be surface treated by coating, oxidation, or the like in order to configure corrosion prevention and stronger rigidity. In addition, in order to prevent the rigid layer 430 from being in electrical contact with an external object, the surface of the rigid layer 430 may be coated using an insulating material.

In addition, the rigid layer 430 may be used as a single case, but in this case, when an alignment defect occurs, deformation such as damage to the solder ball or cracking or bending of the support device is not preferable.

Therefore, it is preferable to integrate the elastic layer 420 and the rigid layer 430. For example, the rigid layer 430 is coated or absorbed with the elastic layer 420, which is a synthetic resin such as silicone, urethane, and epoxy, to form a single body. It can be used as a layer (layer).

In particular, in the case of a rigid layer made of a fiber material, an effect of preventing the lattice of the fiber from being released can also be expected.

In addition, as shown in Figure 4c, the outer surface of the support device may be coupled to the antistatic layer 440 to remove the static electricity that may occur between the support device and the external device located in close proximity to the support device. . The antistatic layer 440 is changed due to static electricity generated between an external device (eg, a solder ball of a semiconductor device) and an insulating layer 410 that is in contact with or close to a supporting device, and thus, an operation characteristic of the semiconductor device is changed when testing the semiconductor device. It is to prevent becoming.

In addition, the electromagnetic shielding layer 450 may be further coupled to an outer surface of the supporting device to remove the electromagnetic interference from an external device that is in contact with or in close proximity to the supporting device. The electromagnetic shielding layer is for preventing an external device (for example, a solder ball of a semiconductor device) in which an electromagnetic interference signal is in contact with or in proximity to a support device, to prevent deformation of its characteristics due to electromagnetic interference. The electromagnetic wave shielding layer 450 may be manufactured by applying an electromagnetic interference (EMI) shielding sheet or a shielding agent. Alternatively, the antistatic layer 440 may be made of an electromagnetic shielding sheet having a similar level of impedance, thereby achieving both the purpose of preventing static electricity and removing electromagnetic interference.

In FIG. 4C, the stacking order is shown in the order of the insulating layer, the elastic layer, the rigid layer, the antistatic layer, and the electromagnetic shielding layer. However, any one of the layers may be omitted, overlapped, or stacked in a different order. Forming should also be considered to be included in the spirit of the present invention. In addition, although each layer is laminated so as to form a symmetrical shape with respect to the center layer, it should also be seen that the lamination to either side is included in the present invention.

For example, the support device may be formed in the form of a plurality of insulating layers 410 or a plurality of elastic layers 420 between the antistatic layer 440. By stacking a plurality of insulating layers 420 or elastic layers 420, it is possible to prevent the support device from being easily stretched or bent and deformed by external pressure, and an electrostatic phenomenon may occur between the insulating layer 410 and the solder ball. Is removed by the antistatic layer 440. Furthermore, an antistatic layer 440 is alternately stacked on the elastic layer 420 for maintaining the elasticity and strength of the support device to prevent static electricity generated between the support device and an external device which is in contact with or close to the support device. It may be a structure, or the layers may be stacked in duplicate.

5A to 5C are cross-sectional views taken along line a-a 'of the support device shown in FIG. 3, and show a support device having a laminated structure according to another embodiment of the present invention.

Referring to FIG. 5A, the support apparatus is formed to include a laminated structure formed by stacking an elastic layer 520 on both sides of the rigid layer 510 and centering the rigid layer 510. In addition, the laminate structure may further include an insulating layer (not shown) for maintaining an insulation state with an external device which is in contact with or is in close proximity to the surface.

The insertion of the rigid layer 510 between the elastic layers 520 is to increase the rigidity, to increase or increase the rigidity of the support device, to prevent the deformation of the support device, instead of reducing the ductility or elasticity of the support device. The rigid layer 510 may be made of a thin metal material such as copper, titanium, or an alloy thereof, but is not limited thereto, and any material may be used to increase the rigidity of the supporting device.

The surface of the rigid layer 510 may be plated with a plating material, or may be surface treated by coating, oxidation, or the like in order to prevent corrosion and have a stronger rigidity. In addition, in order to prevent the rigid layer 510 from being in electrical contact with an external object, the surface of the rigid layer 510 may be coated using an insulating material.

On the other hand, when the rigid layer 510 is formed of a conductive material such as metal, even if the conductive rigid layer and the insulating layer are alternately stacked in the support device, the solder ball and the conductive rigid layer may be disconnected from the inner wall of the ball receiving hole. In order to solve the problem that it can be, in order to prevent the contact between the conductive rigid layer and the solder ball in the ball receiving hole, the conductive rigid layer may be formed to be further escaped from the inner side of the laminated structure such as an insulating layer. Here, the conductive rigid layer is formed to be escaped when etching the ball receiving hole with respect to the conductive rigid layer, by etching to have a width larger than the ball receiving hole of the laminated structure including the insulating layer, the ball receiving hole of the conductive rigid layer is different It means that it is formed larger than the layer. When the ball receiving hole of the conductive rigid layer is larger than the insulating layer or the like, the conductive rigid layer is formed to escape from other layers of the laminated structure, so that the solder balls only contact the insulating layer or the like on the inner wall of the ball receiving hole. Therefore, the problem of disconnection does not occur.

In the laminated structure including the conductive rigid layer and the insulating layer, when the gap between the ball receiving holes is wide, it is sufficient to solve the disconnection problem due to the sufficient escape length. However, when the gap between the ball receiving holes becomes short, the escape length is sufficiently secured. Failure to do so may cause disconnection. For example, when the semiconductor package is horizontally moved by a pusher or the like after being seated on the support structure, the inner surface of the ball receiving hole of the support structure is compressed in the horizontally moving direction, whereby contact between the solder ball and the conductive rigid layer may occur and disconnection may occur.

The elastic layer 520 is located on both sides of the conductive rigid layer to increase the elasticity of the supporting device to prevent deformation or damage of the supporting device, to prevent the solder balls from being disconnected in contact with the conductive rigid layer, and to the supporting device and the supporting device. It serves to maintain an insulating state between external devices (eg, solder balls of semiconductor devices) that are in contact with or in close proximity to each other. The elastic layer 520 is preferably formed of at least one synthetic resin selected from silicone, urethane, and epoxy, but is not limited thereto. Any material having elastic properties may be used. In this case, the elastic layer 520 is more preferably formed of an insulating material.

6 is a cross-sectional view illustrating a process of forming a laminated structure of a support device according to another embodiment of the present invention. After the elastic layer 520 is positioned on both sides of the rigid layer 510, the support device is compressed by being pressed up and down. To form. As a crimping method, there are a heat crimping method using a hot press and a general crimping method performed at room temperature, but are not particularly limited to such a crimping method. When the rigid layer 510 and the elastic layer 520 are laminated and then compressed, the elastic layer 520 is compressed to apply a part or all of the side surfaces of the rigid layer 510 to form a conductive rigid layer 510. The contact with the solder ball is inherently prevented from generating a disconnection failure.

Meanwhile, as shown in FIG. 5C, the rigid layer 510 may be positioned on both sides of the elastic layer 520 with respect to the elastic layer 520. As shown in FIG. 5A, when the elastic layer 520 is stacked around the rigid layer 510, the elasticity of the supporting device is greatly improved, and the disconnection between the conductive rigid layer 510 and the solder ball is surely ensured. On the contrary, when the rigid layer 510 is laminated around the elastic layer 520 as shown in FIG. 5C, the strength is greatly improved, thereby preventing the support device from being deformed or broken by external pressure. . In addition, in FIG. 5A, the elastic layer 520 is stacked on both sides of the rigid layer 510, and in FIG. 5C, the rigid layer 510 is stacked on both sides of the elastic layer 520, but it is not necessarily stacked on both sides. The lamination of each layer on any one surface should also be considered to be included in the present invention.

Meanwhile, as illustrated in FIGS. 5B and 5C, solder balls are prevented from being disconnected by contacting the rigid layer 510 on the outer surface or the inside of the laminated structure of the support device, and are positioned in contact with or close to the support device and the support device. The semiconductor device may further include an insulating layer 530 which serves to maintain an insulating state between external devices (eg, solder balls of a semiconductor device). The insulating layer 530 preferably uses a material having high abrasion resistance, such as a polyimide film, but is not limited thereto. Any material having insulating properties may be used. For example, thin film vinyl materials, engineering plastics, papers, tapes, and the like may be used. By using a material having a high wear resistance, the insulating layer 530 may be peeled off to expose the rigid layer 510 to the outside, and the solder ball may be prevented from contacting the rigid layer 510. By coupling the insulating layer 530 to both sides of the rigid layer 510, the rigid layer 510 may be blocked so that insulation is completely maintained from the outside.

In addition, as shown in Figures 5b and 5c, the outer surface of the support device is coupled to the antistatic layer 540 to remove the static electricity that may occur between the support device and the external device located in close proximity to the support device can do. The antistatic layer 540 is changed in operation characteristics of the semiconductor device during testing of the semiconductor device due to static electricity generated between an external device (eg, a solder ball of the semiconductor device) and the insulating layer 530 which are in contact with or close to the support device. It is to prevent becoming.

In addition, the electromagnetic shielding layer 550 may be further coupled to the outer surface of the support device to remove the electromagnetic interference phenomenon from the external device which is in contact with or close to the support device. The electromagnetic shielding layer is for preventing an external device (for example, a solder ball of a semiconductor device) in which an electromagnetic interference signal is in contact with or in proximity to a support device, to prevent deformation of its characteristics due to electromagnetic interference. The electromagnetic wave shielding layer 550 may be manufactured by applying an electromagnetic interference (EMI) shielding sheet or shielding agent. By manufacturing the antistatic layer 540 as an electromagnetic shielding sheet having a similar level of impedance, it is possible to achieve both the purpose of antistatic and electromagnetic interference removal.

In FIGS. 5B and 5C, the stacking order is shown in the order of a rigid layer (or elastic layer), an elastic layer (or rigid layer), an insulating layer, an antistatic layer, and an electromagnetic shielding layer, but any one of these layers is omitted or overlapped. Laminating or laminating in other order to form the supporting device should also be considered to be included in the technical idea of the present invention. In addition, although each layer is laminated so as to form a symmetrical shape with respect to the center layer, it should also be seen that the lamination to either side is included in the present invention. For example, the support device may be formed in the form of stacking a plurality of insulating layers 530 between the antistatic layer 540. By stacking a plurality of insulating layers 530, the supporting device can be easily prevented from being stretched or deformed by external pressure, and an electrostatic phenomenon that may occur between the insulating layer 530 and the solder ball is prevented from being charged. Is removed by Furthermore, in the rigid layer 510 for maintaining the strength of the supporting device, an antistatic layer 540 for preventing static electricity generated between the supporting device and an external device positioned in close proximity to the supporting device is alternately stacked or Each layer may overlap each other. In this case, the rigid layer 510 may be coated with an insulating material or a rigid layer may be manufactured using an insulating material in order to prevent a disconnection phenomenon with the solder ball.

5A to 5C, the ball receiving hole is described as an example. In order to prevent contact between the solder ball and the conductive rigid layer in the through hole, the through hole of the conductive rigid layer is formed in the elastic layer 520, the insulating layer 530, and the antistatic layer. It may be etched inward from the 540 and the electromagnetic shielding layer 550. Alternatively, by applying or coating the surface of the support device with an insulating material may solve the disconnection problem that may occur in the solder ball.

The support device according to the present invention may be used in combination with a semiconductor package insert, or may be used alone for guiding between the semiconductor package and the contact.

When the support device is used in combination with the semiconductor package insert, the support device can insert injection into one surface of the semiconductor package insert, thereby allowing the semiconductor package insert and the support device to be integrated. In addition, the support device and the semiconductor package insert may be combined as a bolt, or the support device may be awakened using a protrusion formed on the bottom surface of the semiconductor package insert and then fused with a hot plate or ultrasonically fused, or the surface of the support device and the semiconductor package insert may be combined. It is possible to integrate the semiconductor package insert and the support device by bonding the surface of the adhesive by applying an adhesive.

When the support device is used in combination with the semiconductor package insert, since the support device is generally formed to have a thin thickness, as shown in FIG. 7A, the ball receiving hole 320 of the support device 300 includes a contact ( For easy contact between the 21 and the solder ball 11, the semiconductor device 10 serves to fix the semiconductor device 10.

When the support device is formed to a thin thickness, it is preferable to use it in combination with the semiconductor package insert, which is one of the testers 20, as shown in FIG. 7B, when play occurs between the semiconductor package and the tester. This is because the contact 21 may be in contact with the plurality of solder balls 11, or a poor contact may occur in which the contacts 21 and the solder balls 11 do not contact each other.

However, when the thickness of the support device 300 is thicker than the height of the solder ball 11, as shown in FIG. 7C, one contact 21 contacts the plurality of solder balls 11 or a poor contact occurs. As a result, it is possible to prevent the semiconductor package from operating normally. In this case, one solder ball 11 and one contact 21 are in contact with the inside of the ball receiving hole 320, and the movement due to the separation of the contacts 21 can be prevented, so that the solder ball 11 and the contact ( Good contact of 21) can be maintained.

In order to adjust the thickness of the support device 300, the present invention may utilize a method for adjusting the number of layers to be stacked. That is, the plurality of metal rigid layers 510, the plurality of elastic layers 520, and the plurality of insulating layers 530 are stacked in any order, and then the antistatic layer 540 and the electromagnetic shielding layer 550 are laminated on the outer surface. Alternatively, the plurality of metal rigid layers 510, the plurality of elastic layers 520, and the plurality of insulating layers 530 may be stacked, and then the antistatic layer 540 and the electromagnetic shielding layer 550 may be stacked on an outer surface thereof. The thickness of the device can be increased. That is, by stacking a plurality of layers, it is possible to allow one solder ball and one contact 21 to contact each other in the ball receiving groove of the support device.

When using the support device 300 as a guiding member for good contact between the solder ball 11 and the contact 21, the support device 300 is coupled to one surface of the test socket or test substrate, so that the semiconductor device is fixed Can play the role of

In the present embodiment, for easy description of the invention, the terminal portion of the semiconductor device is described with limited solder balls, but this is only an example of application, and not only a ball grid array (BGA) type but also a thin small outline package (TSOP) type and the like. It should be appreciated that it can be applied to the terminal portions of all semiconductor devices.

In addition, the support device according to the present invention may be used in an inspection apparatus such as a test socket assembly for inspecting a semiconductor package. In this case, the support device serves to guide the semiconductor package so that the contacts provided in the semiconductor package and the test socket assembly correctly contact the terminal portions of the semiconductor package. In this case, the through hole of the support device can receive the contact of the test socket assembly, so that the terminal portion of the semiconductor package can be correctly contacted.

The terminology used herein is for the purpose of describing particular example embodiments only and is not intended to be limiting of the invention. Singular expressions include plural expressions unless the context clearly indicates otherwise.

Although the present invention has been described by way of limited embodiments and drawings, the present invention is not limited thereto, and the technical spirit of the present invention and the claims to be described below by those skilled in the art to which the present invention pertains. Various modifications and variations are possible within the scope of equivalents.

10 semiconductor device 11 solder ball
20: Tester 21: Contact
100 semiconductor package insert 110 body
120: pressurizing device 130: support device
140: fixing device 300: support device
310: through hole 320: ball receiving hole
410, 530: insulation layer 420, 520: elastic layer
430, 510: rigid layer 440, 540: antistatic layer
450, 550: electromagnetic wave shielding layer

Claims (19)

An insulating layer for maintaining insulation with an external device in contact with or located in proximity to the surface; And
It includes a laminated structure consisting of a plurality of layers including an elastic layer for preventing deformation or damage of the insulating layer,
And a rigid layer for maintaining strength in the outermost part or inside of the laminated structure.
The method of claim 1,
The semiconductor package support device, characterized in that the elastic layer is laminated on one side or both sides of the insulating layer.
The method of claim 1,
The semiconductor package support device, characterized in that the insulating layer is laminated on one side or both sides of the elastic layer.
The method of claim 1,
The rigid layer is a semiconductor package support device, characterized in that used in combination or composed of any one selected from a metal, an insulating material, a composite including a metal and an insulating material, synthetic resin, ceramic, plastic, paper, and epoxy and fiber materials.
An insulation layer for maintaining an insulation state;
A rigid layer for maintaining strength; And
And a laminated structure including a plurality of layers including an elastic layer for protecting the rigid layer and the solder ball and maintaining an insulation state with an external device in contact with or in proximity to the surface of the rigid layer. A semiconductor package support apparatus.
The method of claim 5, wherein
And the elastic layer is laminated on one or both surfaces of the rigid layer.
The method of claim 5, wherein
The semiconductor package support device, characterized in that the rigid layer is laminated on one side or both sides of the elastic layer.
The method of claim 5, wherein
The rigid layer is a semiconductor package support device, characterized in that used in combination or composed of any one selected from a metal, an insulating material, a composite including a metal and an insulating material, synthetic resin, ceramic, plastic, paper, and epoxy and fiber materials.
6. The method according to any one of claims 1 to 5,
And an antistatic layer on an outermost side or inside of the laminated structure to prevent static electricity generated between external devices in contact or close proximity.
6. The method according to any one of claims 1 to 5,
And an electromagnetic shielding layer in an outermost part or inside of the laminated structure to remove electromagnetic interference from external devices that are in contact with or in close proximity to each other.
6. The method according to any one of claims 1 to 5,
The elastic layer is a semiconductor package support device, characterized in that formed by any one of silicon, urethane, epoxy and synthetic resin.
The method of claim 11,
The elastic layer is a semiconductor package support device, characterized in that it is produced by containing one or more materials of antistatic additives, carbon nanotubes, conductive powder.
6. The method according to any one of claims 1 to 5,
And the elastic layer is formed integrally with the rigid layer.
6. The method according to any one of claims 1 to 5,
And the rigid layer is conductive and escapes further from the side surface of the laminated structure than the elastic layer.
6. The method according to any one of claims 1 to 5,
The semiconductor package support apparatus guides the terminal portion and the contact to contact the terminal portion of the semiconductor element with the contact of the tester in the ball receiving hole.
The ball receiving hole is a semiconductor package support device, characterized in that the part or the whole of the terminal portion of the semiconductor element is guided to guide the semiconductor element.
6. The method according to any one of claims 1 to 5,
The semiconductor package support device is characterized in that coupled to one surface of the semiconductor package insert.
6. The method according to any one of claims 1 to 5,
The semiconductor package support device is characterized in that coupled to the test socket or one surface of the test substrate.
delete 6. The method according to any one of claims 1 to 5,
And at least one of the insulating layer, the rigid layer, and the elastic layer is stacked in an overlapping manner.

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