KR101136968B1 - Optical-electricity inspection apparatus suing probe array - Google Patents

Abstract

The present invention provides a probe array including a plurality of probes for supplying power to a test object, a second stage unit for moving the probe array to a target position for an electro-optical inspection of the fixed object, and a plurality of probes; Signal processing and control unit that provides signals for sequentially driving one of the probes, and optical / electrical analysis of the optical characteristics of the output light received from the chip of the object and the characteristics of the power output from the probe It relates to an electro-optical inspection device including an analysis unit. According to an embodiment of the present invention, the electro-optic inspection of the object can be performed at a high speed, so that high-speed data can be secured, and the higher the precision measurement, the shorter the measurement time is. Make it even higher.

Description

Optical-electricity inspection apparatus suing probe array}

The present invention relates to an electro-optical inspection device using an optical / electric probe. In particular, the present invention relates to an electro-optical inspection apparatus for inspecting optical / electrical characteristics of an object such as a wafer having an electro-optic characteristic, such as a light emitting diode (LED), an organic LED (OLED), or a laser diode (LD). It is about.

Although the present invention will be described with reference to LED wafers, the present invention is not limited thereto, and thus p / n junctions, solar cells, semiconductor laser structures, etc., as well as all types of light emitting materials systems based on semiconductors or organic low molecular weight or polymers. It can also be applied in the optical, electrical and optoelectronic evaluation of.

The present invention is derived from the research conducted as part of the production innovation technology development project of the SMBA [Task Management No .: S1047402, Project Name: Development of LED Wafer Electroluminescence (EL) Characteristic Measurement / Inspection System].

Light emission from semiconductor based and organic low molecular or polymeric material systems is generated through radioactive recombination of excess electrons and holes in the light emitting / activating layer by current injection. Thus, this type of light emission is collectively referred to as electroluminescence.

For optimization of material growth recipes or quality control for additional device fabrication, it is necessary to analyze electroluminescent properties at the wafer level as objects (eg, LEDs, OLEDs, LDs, etc.) function through electroluminescence.

In accordance with such a need, a wafer level test has been conventionally performed to test nondestructive characteristics of light emitting materials at the wafer level.

Wafer level testing belongs to the free laser process of device manufacturing processes. The free laser process refers to a process prior to the laser repair process, which serves to screen the defective chip in the wafer and take over the defective address of the repairable chip to the repair process.

In such a free laser process, equipment is needed to load and align the wafer so that it comes into contact with the test probes.

However, in the wafer level test of the conventional electro-optic device, an electro-optic inspection of the entire wafer is performed using one probe. In the case of performing an electro-optic inspection using one probe in this way, each scanning of the entire area of the wafer must be performed, and this requires time to move the precision stage up, down, left and right.

As a result, the conventional electro-optic inspection, which uses an probe to perform an electro-optic inspection, has a problem that the measurement time is long, and therefore, it is difficult to secure high-speed data at the time of high-resolution precision measurement.

An object of the present invention is to provide an electro-optical inspection apparatus using a probe array that can measure the electro-optic inspection of the object at high speed.

According to an aspect of the present invention, there is provided a probe array including a plurality of probes for supplying power to an object, and a method of moving the probe array to a target position for optical inspection of the fixed object. A second stage unit, a signal processing and control unit providing a signal for sequentially driving one of the plurality of probes, and an optical characteristic of an output light received from a chip of the object, and analyzing power characteristics of the probes Provided is an electro-optical inspection device including an optical / electrical analysis unit for analyzing characteristics.

The present invention also provides a probe array including a plurality of probes for supplying power to an object, and moving the probe array to a target position for optical inspection of the fixed object. A second stage unit, a signal processing and control unit providing a signal for sequentially driving one of the plurality of probes, an integrating sphere for receiving output light received from a chip of the object, and the output light through the integrating sphere It provides an electro-optic inspection device comprising an optical / electrical analysis unit for receiving the light and analyzes the optical characteristics of the output light and the characteristics of the power output from the probe.

According to an embodiment of the present invention, the electro-optic inspection of the object can be performed at a high speed, so that high-speed data can be secured.

In addition, according to an embodiment of the present invention, the high-resolution precision measurement increases the effect of shortening the measurement time to further increase the utilization value as inspection equipment of the production process.

1 is a view showing a probe array according to an embodiment of the present invention.
2 is a flowchart illustrating an operation of a probe array according to an exemplary embodiment of the present invention.
3 is a view for explaining the concept of an electro-optical inspection method using a probe array according to a first embodiment of the present invention.
4 is a view for explaining the concept of an electro-optical inspection method using a probe array according to a second embodiment of the present invention.
5 is a diagram illustrating a configuration of an electro-optical inspection apparatus using a probe array according to the first exemplary embodiment of the present invention.
6 is a view showing the configuration of an electro-optical inspection device using a probe array according to a second embodiment of the present invention.
7 is a perspective view showing the structure of a probe in an electro-optical inspection apparatus using a probe array according to a second exemplary embodiment of the present invention.
FIG. 8 is an exploded perspective view illustrating an optical fiber configured in the probe illustrated in FIG. 7.
9 is a flowchart illustrating an electro-optical inspection method using a probe array according to an exemplary embodiment of the present invention.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art may easily implement the present invention. As those skilled in the art would realize, the described embodiments may be modified in various different ways, all without departing from the spirit or scope of the present invention. In the drawings, parts irrelevant to the description are omitted in order to clearly describe the present invention, and like reference numerals designate like parts throughout the specification.

Throughout the specification, when a part is said to "include" a certain component, it means that it can further include other components, without excluding other components unless specifically stated otherwise. In addition, the terms “… unit”, “… unit”, “module”, etc. described in the specification mean a unit that processes at least one function or operation, which may be implemented by hardware or software or a combination of hardware and software. have.

Now, an electro-optic inspection apparatus using a probe array according to an exemplary embodiment of the present invention will be described in detail with reference to the accompanying drawings.

1 is a view showing a probe array according to an embodiment of the present invention.

As illustrated in FIG. 1, the probe array 120 according to an exemplary embodiment may include a plurality of selection lines S1 through S4 and a plurality of power lines perpendicularly crossing the plurality of selection lines S1 through S4. P1 to Pn are formed, and an operation switch 124 and a single microprobe 121 are formed at each intersection of the plurality of selection lines S1 to S4 and the plurality of power lines P1 to Pn. .

Therefore, the probe array 120 according to an embodiment of the present invention includes a plurality of microprobes 121, wherein the plurality of microprobes 121 is a test set on an object (eg, a wafer) to inspect the electro-optic characteristics. Is aligned to the position.

Here, although a plurality of selection lines are illustrated as four for convenience of description, the present invention is not limited thereto, and the present invention is limited to the number of selection lines corresponding to the test object. In addition, the plurality of power lines P1 to Pn is two or more in the minimum and the number of power lines P1 to Pn is the number of the targets to be measured on the wafer to be measured.

One operation switch 124 is connected to one selection line to turn on / off operation according to the selected power applied through the selection line connected, the operation of the microprobe 121 according to the turn on / off operation It is installed to be determined.

For example, the operation switch 124 is a transistor for switching operation, specifically, a metal-oxide-semiconductor field effect transistor (MOSFET), and a gate thereof is connected to a select line (one of S1 to S4) and drained. It is connected to this power supply line (one of P1 to Pn).

Here, in the embodiment of the present invention with reference to FIG. 1, the operation switch 124 is shown as a MOSFET, but the present invention is not limited thereto. Thus, the operation switch 124 may include a junction field effect transistor (JFET), Various transistors, such as a thin film transistor, etc., In addition, it can be a device which functions as a switch, such as a relay switch.

The microprobe 121 is connected to the operation switch 124, that is, the source of the MOSFET, and is driven when the operation switch 124 is turned on and the operating power is applied to the source terminal. To provide current.

In addition, the probe array 120 according to an exemplary embodiment of the present invention may include a plurality of probe selection units 122 connected to the plurality of selection lines S1 to S4 in order to sequentially drive the plurality of microlubes 121 one by one. One end of each of the power lines P1 to Pn includes a plurality of power switches 125 connected to each other and a power applying unit 123 connected to the other ends of the plurality of power switches 125.

The probe selector 122 sequentially applies selection power to one selection line with respect to the plurality of selection lines S1 to S4.

The power applying unit 123 applies operating power to each of the power lines P1 to Pn in synchronization with the operation of the probe selecting unit 122, and the plurality of power switches 125 are used to operate the probe selecting unit 122. Synchronously turn on / off one by one.

Meanwhile, in the above-described embodiment, the plurality of power switches 125 are described as being configured separately from the power applying unit 123. However, those skilled in the art may designate the plurality of power switches 125 as the internal configuration of the power applying unit 123. It can be designed to be included.

On the other hand, those skilled in the art according to the embodiment of the present invention can be configured to separate the probe selector 122 and the power applying unit 123 to the probe array 120, the separate probe selector 122 and the power applied The unit 123 may be included in the signal processing and control unit 160 or may be constructed as a separate device.

Hereinafter, an operation of a probe array according to an exemplary embodiment of the present invention configured as described above will be described with reference to FIG. 2.

2 is a flowchart illustrating an operation of a probe array according to an exemplary embodiment of the present invention.

The probe selector 122 applies a selection power source to the first selection line S1 of the plurality of selection lines S1 to S4 (S201).

Then, while the probe selector 122 applies the selection power to the selection line S1, the power supply unit 123 applies the operating power to each of the power lines P1 to Pn.

While the probe selecting unit 122 applies the selected power to the selection line S1 and the power applying unit 123 applies the operating power to each of the power lines P1 to Pn, the power line P1 among the plurality of power switches. Is connected to the power switch 125 is turned on for a set time.

Accordingly, the operating power is applied only to the power line P1 among the operating powers applied to the respective power lines P1 to Pn by the power applying unit 123, so that the selection is connected to the power line P1 and the selection line S1. The switch 124 is turned on, and power is supplied to the wafer from only one microfruit 121 connected to the selection switch 124 (S202).

Then, when the select switch 124 connected to the power line P1 and the select line S1 is turned on for a set time and then turned off, the power switch 125 connected to the power line P2 is turned on for a set time. Thus, the selection switch 124 connected to the power supply line P2 and the selection line S1 is turned on for a set time, and thus the microprobe 121 at the intersection of the power supply line P2 and the selection line S1 is turned on. Operating power is applied to the operation (S203)

The sequential turn on / off of the power switch is repeated until the micropro unit 121 formed at the intersection of the selection line S1 and the power line Pn operates (S204).

Next, when the operation of all the microprobes 121 connected to the selection line S1 is completed, the probe array 120 repeats steps S202 to S204. That is, the probe selecting unit 122 applies the selection power to the selection line S2 adjacent to the selection line S1, and the power supply unit 123 applies the operating power to each of the power lines P1 to Pn. The plurality of power switches 125 sequentially turn on one power switch for a set time and then turn it off.

The probe array 120 repeats steps S202 to S204 until the microprobe 121 connected to the last selection line, that is, the selection line S4, is operated (S205 to S208).

Next, an electro-optical inspection method using a probe array according to an exemplary embodiment of the present invention will be briefly described with reference to FIGS. 3 and 4.

3 is a view for explaining the concept of an electro-optical inspection method using a probe array according to a first embodiment of the present invention.

As shown in FIG. 3, the electro-optic inspection method using the probe array according to the first exemplary embodiment of the present invention provides the electro-optical characteristics of the probe array 120 such as a light emitting diode (LED) or a laser diode (LD). After positioning on the excitation wafer 10, electrooptic inspection is performed on all regions on the wafer 10 without moving the probe array 120.

In this case, in the electro-optical inspection method using the probe array according to the first embodiment of the present invention, in order to omit the movement operation for the optical inspection of the probe array 120, the probe array 120 may be replaced with the total area of the wafer 10. ST).

That is, the electro-optical inspection method using the probe array according to the first exemplary embodiment of the present invention is a method in which the electro-optic inspection is performed at one time without the movement of the probe array 120.

4 is a view for explaining the concept of an electro-optical inspection method using a probe array according to a second embodiment of the present invention.

As shown in FIG. 4, the electro-optic inspection method using the probe array according to the second embodiment of the present invention uses the probe array 120 smaller than the probe array according to the first embodiment of the present invention when the objects are the same. . That is, the electro-optical inspection method using the probe array according to the second embodiment of the present invention uses the probe array 120 having an area smaller than the area of the wafer 10 as the inspection object.

For example, the area of the probe array 120 according to the second embodiment of the present invention is expressed as 1 / n (n is a real number) such as 1/2 or 1/3 of the area of the wafer 10 as the inspection object. can do.

Therefore, the electro-optical inspection method using the probe array according to the second embodiment of the present invention cannot perform the entire inspection on the wafer 10 by one optical inspection. After performing, the probe array 120 is moved to the next position through the transfer process to perform optical inspection.

For example, as shown in FIG. 4, the electro-optic inspection method using the probe array according to the second exemplary embodiment of the present invention performs optical inspection on the first local area ST1 on the wafer 10, and then ST2 and ST3. Next, the optical inspection is performed in the order of ST4, and finally, the optical inspection of the local area ST20 is performed.

At this time, the electro-optical inspection method using the probe array according to the second embodiment of the present invention, in order to perform the optical inspection sequentially from the local area (ST1) to the local area (ST2), forward and backward movement (X-axis movement), Left-right movement (Y-axis movement) and up-down movement (Z-axis movement) are required.

However, the electro-optical inspection method using the probe array according to the second exemplary embodiment of the present invention inspects one chip at a time because the area to be inspected by one optical inspection is large even though the probe array 120 has a transfer process. Compared with the conventional method, the number of movements of the probe array is small, so that high-speed electro-optic inspection is performed.

Hereinafter, an electro-optical inspection apparatus using probe arrays according to first and second embodiments of the present invention will be described with reference to FIGS. 5 to 8.

First, an electro-optical inspection apparatus using a probe array according to a first embodiment of the present invention will be described with reference to FIG. 5. 5 is a diagram illustrating a configuration of an electro-optical inspection apparatus using a probe array according to the first exemplary embodiment of the present invention.

As shown in FIG. 5, the electro-optical inspection apparatus 100 using the probe array according to the first embodiment of the present invention includes a wafer 10 having an electro-optic characteristic, a first stage unit 110, and a probe 120. ), A second stage unit 130, an optical / electrical analysis unit 140, an integrating sphere 150, and a signal processing and control unit 160.

The optical / electric analyzer 140 includes a current / voltage generator 141, a current / voltage measurer 142, an optical power analyzer 143, and an optical wavelength analyzer 144.

The wafer 10 may be, for example, an LED wafer, an OLED wafer or an LD wafer, or another wafer having electro-optic characteristics as an object for performing an optical inspection. Herein, in the present invention, all semiconductor devices requiring electro-optic inspection in the manufacturing process may be used as objects of the wafer 10. Therefore, in the following description, the object requiring optical inspection is collectively referred to as the wafer 10, but is not limited to a specific wafer.

The first stage unit 110 has a multi-axis transfer means (not shown) for moving the wafer 10 in a plurality of directions (x-axis, y-axis, z-axis), the wafer 10 is loaded on the And a chuck 111.

The chuck 111 may fix the wafer 10 to be seated by vacuum adsorption, and an electrode part may be formed at the lower portion of the chuck 111 to be electrically connected to the wafer 10 to flow a current applied to the wafer.

The multi-axis conveying means may be composed of at least one rail system, a ball screw system or a cylinder to guide in both directions. Each of the transfer means may include an electric driving means operating according to the signal processing and the signal of the controller 160 and a sensor to fix the first stage unit 110 to a testable position.

The second stage unit 130 controls the transfer of the probe array 120. Like the first stage unit 110, the second stage unit 130 has a multi-axis transfer unit which is moved in a plurality of directions, and the operation of the multi-axis transfer unit is controlled according to the control signal. Controlled. The second stage unit 130 may bring the probe array 120 as close to the wafer 10 as possible by lifting and lowering the probe array 120.

As shown in FIG. 1, the probe array 120 includes a probe selector 122, a power supply unit 123, and an operation switch 124 for selectively operating each of the plurality of probes 121 and the plurality of probes 121. And a power switch 125. The probe array 120 operates as described with reference to FIG. 2.

In this case, each probe 121 supplies power to a corresponding position of the wafer 10 so that electroluminescence is performed at the corresponding position.

The integrating sphere 150 receives the electroluminescence generated by the probe 121 and provides the received light to the optical / electrical analysis unit 140. The integrating sphere 150 may be configured to be integrally connected to the probe array 120 or may be configured to be independent of the probe array 120.

The optical / electric analysis unit 140 outputs a control signal for operating the probe selection unit 122, the power applying unit 123, and the power switch 125 of the probe array 120 to be synchronized with each other, and A power supply (voltage or current) is provided to the array 120, and the optical characteristics of the optical signal received by the probe array 120 are analyzed.

To this end, the optical / electric analyzer 140 includes a voltage / current generator 141 and a current / voltage measurer 142 for determining electrical characteristics, and an optical power analyzer 143 for determining optical characteristics. An optical wavelength analyzer 144 is included. Here, the optical / electrical analysis unit 140 has been described in the form of a configuration for grasping electrical characteristics and a configuration for grasping optical characteristics, but the present invention is not limited thereto. Each configuration can be configured separately.

The voltage / current generator 141 serves to transfer a voltage or current to the probe array 120 at a constant level in order to measure electrical characteristics of the wafer 10. In this case, the voltage / current generator 141 may change a voltage or current generated for various inspections.

The current / voltage measuring unit 142 measures the strength of the current or voltage applied to the probe array 120.

The optical power analyzer 143 analyzes the output light of the wafer 10 received through the integrating sphere 150 to determine the optical power, and the optical wavelength analyzer 144 receives the wafer 10 received through the integrating sphere 150. Analyze the output light (spectrum) of the sensor to determine the wavelength of light.

The signal processing and control unit 160 serves to control the overall operation for controlling the optical inspection apparatus 100 according to an embodiment of the present invention, and the probe array for fixing the wafer 10 and inspecting the multi-point optically. The control signal for moving the 120 to the target point is transmitted to the first stage unit 110 and the second stage unit 130.

In addition, although omitted in the drawings, the signal processing and control unit 160 visually displays the data of the test results analyzed through the optical / electrical analysis unit 140 and the optical signal unit 150 in conjunction with a multifunctional operating system such as a computer. Can be printed, stored and saved.

Electro-optic inspection device 100 using a probe array according to the first embodiment of the present invention configured as described above is an electro-optic inspection method using a probe array according to the first embodiment of the present invention described with reference to FIG. "The first electro-optic inspection method" and the electro-optic inspection method (hereinafter referred to as "the second electro-optic inspection method") using the probe array according to the second embodiment of the present invention described with reference to FIG. Use one method.

In addition, in response to the difference in the electro-optic inspection method used, the electro-optic inspection apparatus 100 according to the first embodiment of the present invention is different in operation.

For example, in the case of using the first electro-optic inspection method, the probe array 120 has a larger number of probes 121 than in the case of using the second electro-optic inspection method. As many probes 121 as possible can be made to the electro-optical inspection of the entire wafer (10).

In the case of using the first electro-optic inspection method, since the probe array 120 does not require a movement operation for optical inspection, the second stage unit 130 may be an initial position of the probe array 120 through the multi-axis transfer means. It only performs the transfer for the alignment (that is, the alignment for alignment), and does not perform a separate transfer operation for optical inspection.

On the other hand, in the case of using the second electro-optic inspection method, the probe array 120 has a smaller number of probes 121 than in the case of using the first electro-optic inspection method.

In addition, the second stage unit 130 transfers to the initial position of the probe array 120 through multi-axis transfer means (ie, transfer for alignment), and a plurality of transfers for optical inspection on the same wafer 10. Perform the action.

Next, an electro-optical inspection apparatus using a probe array according to a second embodiment of the present invention will be described with reference to FIG. 6. 6 is a view showing the configuration of an electro-optical inspection device using a probe array according to a second embodiment of the present invention.

As shown in FIG. 6, the electro-optical inspection apparatus 100a using the probe array according to the second embodiment of the present invention generally includes the electro-optic inspection apparatus 100 using the probe array according to the first embodiment of the present invention. ) And the configuration is the same.

However, the electro-optical inspection apparatus 100a using the probe array according to the second embodiment of the present invention does not use the integrating sphere 150, and the probe part forming the probe array 120 is different.

Specifically, as illustrated in FIGS. 7 and 8, the probe 121a used in the electro-optical inspection apparatus 100a using the probe array according to the second embodiment of the present invention may be electrically connected according to the first embodiment of the present invention. It is different from the probe 121 used for the optical inspection apparatus 100. This difference prevents the electro-optical inspection apparatus 100a using the probe array according to the second embodiment of the present invention from using the integrating sphere 150.

As shown in FIG. 7, the probes 121a applied to the electro-optical inspection device according to the second embodiment of the present invention may include a conductive wire 1211, an optical fiber array 1212, and a condenser lens. 1213 and coating 1214.

The wire 1211 is a linear thin conductor that serves to emit light by applying voltage / current to a target position (point) of the wafer 10 to be examined for optical / electrical characteristics.

The optical fiber array 1212 is configured in the form of a bundle wrapped with a plurality of optical fibers on the outer circumferential surface of the wire 1211 to receive light emitted from a target position of the wafer 10. That is, the optical fiber array 1212 arranges a plurality of optical fibers in a circular shape with the wire 1211 formed in the longitudinal direction as a center axis, and concentrates the light to the minute portion of the wafer 10 through the lens effect of the optical fiber itself. can do.

The probe 121a using the optical fiber array 1212 according to the present invention may locally capture light of the wafer 10 to increase the resolution in a technique such as wafer inspection mapping. In addition, since the object such as the wafer 10 can be approached very close, it is possible to effectively remove other noise light, such as ambient light, there is an advantage that can obtain a reliable inspection results.

Meanwhile, in FIG. 7, six optical fibers are arranged in a circle in one wire 121, but the present invention is not limited thereto. If the wire cross section is formed in a polygon, the optical fiber array may fit the shape. 1212 may be formed.

The condenser lens 1213 is formed in the shape of a lens at each end of the optical fiber, and serves to improve the performance of condensing light emitted from the wafer 10.

The cladding 1214 protects the optical fiber array 1212 from impact, and serves to fix the array of optical fibers to remain constant.

Here, the probe 121a illustrated in FIG. 7 will be described in more detail with reference to FIG. 8.

As shown in FIG. 8, the optical fiber is composed of a core 1212a and a cladding 1212b, and has a double cylindrical shape in which the round core 1212a is uniformly wrapped with the cladding 1212b. The optical fiber has a structure in which the core 1212a has a higher refractive index than the cladding 1212b, and thus has the effect of using a lens in itself, and the light is focused on the core 1212a and proceeds without being easily escaped. In addition, the material is thin and light plastic or glass has the advantage of direct and transfer.

The condenser lens 1213 is attached to the end of the optical fiber as a hemispherical glass or transparent synthetic resin, and serves to improve the condensing performance as well as condensing by the lens effect of the optical fiber itself.

Hereinafter, an electro-optical inspection method using a probe array according to an exemplary embodiment of the present invention will be described with reference to FIG. 9. 9 is a flowchart illustrating an electro-optical inspection method using a probe array according to an exemplary embodiment of the present invention.

Prior to the description, there are two methods for measuring the electrical characteristics of the wafer by the optical inspection apparatus 100, 100a by applying a current and measuring a voltage, and by applying a voltage and measuring a current.

First, there is a method of measuring a change in voltage while changing the current flowing to the wafer 10 little by little, and measuring the wavelength and power of the output light generated at this time. Second, applying a voltage to the wafer 10 little by little. It is a method of measuring the current flowing while changing and measuring the wavelength and power of the output light generated at this time.

Referring to FIG. 9 in consideration of such a measuring method, the second stage unit 130 of the optical inspection apparatus 100 or 100a according to the embodiment of the present invention having the above-described configuration may include a signal processor and a controller 160. The probe array 120 is positioned at a target position for optical inspection of the fixed wafer 10 according to the control of S1101.

Here, the probe array 120 may be a target position for the optical inspection of the wafer 10 may be a position of the chip to be tested and preferably as close as possible.

Then, the signal processing and control unit 160 applies a current or voltage to the probe array 120 through the optical / electrical analysis unit 140, and supplies power to the probe selection unit 122 of the probe array 120. The unit 123 and the power switch 125 are operated.

Accordingly, the probe selector 122, the power applying unit 123, and the power switch 125 of the probe array 120 operate in synchronization with each other, as described with reference to FIG. 2. The probe 121 is sequentially operated in the set order.

That is, the electro-optical inspection apparatus 100 operates by applying a current or voltage to one of the probes 121 and 121a of the probe array 120 (S1102), and the wafer 10 in the operated probes 121 and 121a. Measure the intensity of the voltage or current applied to (S1103).

At this time, the voltage / current generator 141 of the optical / electrical analysis unit 140 may change the voltage or current generated over time for various inspection.

When the voltage / current is applied to the target position to emit light, the probes 121 and 121a applying the current or voltage receive the output light through the optical fiber array 122 or the integrating sphere 150 and then the optical power analyzer 143. ) And the optical wavelength analyzer 144 (S1104).

The optical power analyzer 143 analyzes the optical power of the received output light, and the optical wavelength analyzer 144 analyzes the optical wavelength of the received output light (S1105).

The electro-optical inspection apparatus 100 repeats the processes S1102 to S1105 until the optical power and the optical wavelength of the output light of the chip which are optically inspected by the last probe 121 (S1106). Here, the last probe 121 is, for example, a probe provided at an intersection point of the selection line S4 and the power supply line Pn.

When the optical inspection apparatus 100 finishes the optical inspection using all the probes, the analyzed value (optical power / wavelength) is matched with at least one of measurement time, wafer target position, measurement voltage, and measurement current, and the data is output. Save (S1107).

On the other hand, the electro-optic inspection method using the probe array according to the second embodiment of the present invention is almost similar to the process described with reference to Figure 9, between the process S1106 and S1107, the probe array 120 is set to the next position set After positioning, a process of repeating steps S1102 to S1106 is required.

As described above, according to the present invention, the probe 121 composed of the thin conductive wire 1211 and the bundle-type optical fiber array 1212 can be used to locally capture the light emitted from the wafer 10 to provide a technique such as wafer inspection mapping. This has the advantage of increasing the resolution at. In addition, since the probe is very close to the object to remove other noise light in the surroundings, there is an effect of increasing the reliability of the measured value.

The embodiments of the present invention described above are not only implemented by the apparatus and method but may be implemented through a program for realizing the function corresponding to the configuration of the embodiment of the present invention or a recording medium on which the program is recorded, The embodiments can be easily implemented by those skilled in the art from the description of the embodiments described above.

Although the embodiments of the present invention have been described in detail above, the scope of the present invention is not limited thereto, and various modifications and improvements of those skilled in the art using the basic concepts of the present invention defined in the following claims are also provided. It belongs to the scope of rights.

100: optical inspection device 110: first stage
10: object (wafer) 120: probe array
121: Probe 122: Probe selection part
123: power supply unit 124: operation switch
125: power switch

Claims (12)

Probe array including a plurality of probes for supplying power to the test object,
A second stage unit which transfers the probe array to a target position for optical inspection of the fixed object;
Signal processing and control unit for providing a signal for sequentially driving one of the plurality of probes, and
An optical / electrical analysis unit for analyzing an optical characteristic of the output light received from the object and analyzing a characteristic of a power output from the probe;
The probe array,
A plurality of selection lines to which a selection power is applied;
A plurality of power lines perpendicular to the plurality of selection lines and to which operating power is applied;
A plurality of operation switches formed at respective crossing points of the plurality of selection lines and the plurality of power lines, one ends of which are connected to the plurality of power lines and are turned on / off by the selected power source;
And a plurality of probes connected to the operation switch, the probes being operated by receiving the operating power when the connected operation switch is turned on. delete The method of claim 1,
The probe array,
A probe selection unit connected to the plurality of selection lines and sequentially applying the selection power to each of the selection lines among the plurality of selection lines;
Further comprising a power applying unit for applying the operating power to the plurality of power lines in synchronization with the operation of the probe selector,
The plurality of operation switches are sequentially turned off after one operation switch is turned on for a predetermined time while the selection power is applied from the probe selecting unit and the operation power is applied to the plurality of power lines. Electro-optic inspection device using a probe array. The method of claim 3,
Each probe of the probe array,
Electro-optic inspection device using a probe array, characterized in that the linear conductive wire and the optical fiber array in the form of a bundle on the outer peripheral surface of the conductive wire. The method of claim 4, wherein
Each probe is
Electro-optic inspection device using a probe array, characterized in that hemispherical condensing lens is attached to each optical fiber end of the optical fiber array. The method of claim 5,
Each probe is
Electro-optic inspection device using a probe array, characterized in that it further comprises a coating to protect the optical fiber array and the conductive wire from external impact and the array is kept constant. The method of claim 4, wherein
The optical / electrical analysis unit,
A voltage / current generator for generating a voltage or current applied to the target position through the conductive wire;
A current / voltage measuring unit measuring the voltage or current applied to the probe,
An optical power analyzer for measuring the optical power by analyzing the output light;
Electro-optic inspection device using a probe array characterized in that it comprises an optical wavelength analyzer for measuring the wavelength of the light by analyzing the output light. The method of claim 6,
And a first stage unit for moving the object in a plurality of directions and a chuck on which the object is seated under the control of the signal processing and the controller. Probe array including a plurality of probes for supplying power to the test object,
A second stage unit which transfers the probe array to a target position for optical inspection of the fixed object;
Signal processing and control unit for providing a signal for sequentially driving one by one of the plurality of probes,
An integrating sphere for receiving the output light received from the chip of the object, and
And an optical / electric analyzer configured to receive the output light through the integrating sphere to analyze the optical characteristics of the output light and to analyze the characteristics of the power output from the probe.
The probe array,
A plurality of selection lines to which a selection power is applied;
A plurality of power lines perpendicular to the plurality of selection lines and to which operating power is applied;
A plurality of operation switches formed at respective crossing points of the plurality of selection lines and the plurality of power lines, one ends of which are connected to the plurality of power lines and are turned on / off by the selected power source;
And a plurality of probes respectively connected to the operation switch, the probes being operated by receiving the operation power when the connected operation switch is turned on. delete 10. The method of claim 9,
The probe array may include: a probe selection unit connected to the plurality of selection lines and sequentially applying the selection power to one selection line among the plurality of selection lines;
Further comprising a power applying unit for applying the operating power to the plurality of power lines in synchronization with the operation of the probe selector,
The plurality of operation switches are sequentially turned off after one operation switch is turned on for a predetermined time while the selection power is applied from the probe selecting unit and the operation power is applied to the plurality of power lines. Electro-optic inspection device using a probe array. The method of claim 11,
And a first stage unit for moving the object in a plurality of directions and a chuck on which the object is seated under the control of the signal processing and the controller.

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