KR101131495B1 - Cmp pad conditioner and its manufacturing method - Google Patents

Abstract

Here, a method of manufacturing a CMP pad conditioner having diamond abrasive grains having a height difference is disclosed. The manufacturing method of the CMP pad conditioner includes the steps of (a) forming a mask layer having a plurality of openings having different areas on the surface of the metal base material, (b) plating the surface of the base material on which the mask layer is formed, Forming base plating layers having different heights in the openings, and (c) arranging one diamond abrasive grain in each of the base plating layers having different heights to form a height difference between the diamond abrasive grains.

Description

CMP PAD CONDITIONER AND MANUFACTURING METHOD THEREOF {CMP PAD CONDITIONER AND ITS MANUFACTURING METHOD}

The present invention relates to a CMP pad conditioner and a manufacturing method thereof, and more particularly, to a CMP pad conditioner capable of controlling the height of the support layer of the diamond abrasive grains as desired, thereby forming diamond abrasive grains at the desired height. It relates to manufacturing technology.

Chemical Mechanical Polishing (CMP) processes are used in many industries to polish the surface of certain workpieces. In particular, in the field of manufacturing semiconductor devices, microelectronic devices or computer products, the CMP process is widely used for polishing ceramics, silicon, glass, quartz, metals and / or wafers thereof. The CMP process involves the use of a CMP pad that rotates to face a workpiece such as a wafer. In addition, during the CMP process, a liquid slurry containing a chemical substance and abrasive particles are added to the CMP pad.

In the field of manufacturing semiconductor devices, scratches or defects on the wafer during the CMP process reduce the yield and productivity of the semiconductor devices. In particular, in a CMP process in which a relatively large diameter wafer is planarized using a correspondingly large CMP pad, the impact and stress applied to the wafer and the CMP pad are further increased, and thus the frequency of defects such as scratches occurring on the wafer is increased. Is also higher.

Particularly important for the polishing quality by the CMP process is the distribution of abrasive particles spreading throughout the CMP pad. The top of the CMP pad typically supports abrasive particles by mechanisms such as fibers or small pores, where such fibers or small pores determine the performance of the CMP pad. Therefore, in order to maintain the performance of the CMP pad, it is necessary to keep the upper fibrous structure of the CMP pad as flexible as possible and have sufficient extra voids to accommodate new abrasive particles. For this purpose, a conditioning or dressing process of the CMP pad by the CMP pad conditioner is required.

The CMP pad conditioner is a tool for conditioning or dressing a CMP pad top while rotating facing the CMP pad, and includes a structure in which a plurality of diamond abrasive grains are fixed on a metal substrate. In a typical CMP pad conditioner, the diamond abrasive grains contained therein penetrate moderately or excessively into the CMP pad to make a practical dressing. However, such a CMP conditioner has a problem that there is little or little discharge passage of the slurry, there is a risk of damaging the upper part of the CMP pad.

Meanwhile, in the related art, a relatively high region and a small region are respectively formed on a plate-shaped metal base material, and a plurality of diamond abrasive grains are fixed to each of the region having a large height and the region having a small height, and diamond grains are formed according to the region. A method of manufacturing a CMP pad conditioner having different heights has been proposed.

However, the conventional technique adopts a method of fixing a plurality of diamond abrasive grains in one common region different in height from another region, and thus it is impossible to control the height of the individual diamond abrasive grains, and the depth direction in the common region is impossible. As a result, there is a problem in that the design for extending the flow path is impossible. That is, since a region having one height is conventionally defined on the base material and a plurality of diamond abrasive grains must be disposed in the region, the entire region is planar, and thus the flow path in the depth direction is impossible, and diamond abrasive grains are desired. There were many limitations in designing the height of the field differently. This is a major obstacle to increasing the main performance of CMP pad conditioners such as cutting forces and expanding the flow space of slurry and / or pad debris.

Accordingly, the problem to be solved by the present invention is that by controlling the height for each diamond abrasive grain, it is easier to form the individual diamond abrasive grains on the base material to a desired height, and to expand the flow space of the slurry and / or pad debris. It would be easier to provide a CMP pad conditioner manufacturing method.

According to one aspect of the present invention, a method of manufacturing a CMP pad conditioner having diamond abrasive grains having a height difference is provided. The CMP pad conditioner manufacturing method includes the steps of: (a) forming a mask layer having a plurality of openings having different areas on the surface of the metal base material, (b) plating the surface of the base material on which the mask layer is formed, and Forming base plating layers having different heights in the openings, and (c) arranging one diamond abrasive grain in each of the base plating layers having different heights to form a height difference between the diamond abrasive grains.

Preferably, the step (a) includes the steps of forming a photoresist film on the surface of the metal base material, and removing the photoresist film to different sizes in a plurality of regions, thereby forming a mask layer including openings having different areas. Steps.

Preferably, the CMP pad conditioner manufacturing method may include removing the mask layer after the step (c).

Preferably, the CMP pad conditioner manufacturing method may further include forming a finish plating layer on the surface of the metal base material from which the mask layer is removed.

According to another aspect of the invention there is provided a CMP pad conditioner, the CMP pad conditioner, a metal base material, a plurality of base plated layers formed on the surface of the metal base material at different heights, and disposed in each of the plurality of base plated layers Contains diamond abrasive grains.

Preferably, the plurality of base plating layers include a first base plating layer having a first height and a first area, a second base having a second height larger than the first height and a second area smaller than the first area. It includes a plating layer.

Preferably, the CMP pad conditioner includes a plurality of pattern regions on a metal base material, wherein a plurality of first base plating layers are formed in a first pattern region of the plurality of pattern regions, and a first one of the plurality of pattern regions is formed. A plurality of second base plating layers are formed in the second pattern region, and the diamond abrasive grain height of the first pattern region is different from the diamond abrasive grain height of the second pattern region.

Preferably, the CMP pad conditioner includes a pattern region on the metal base material, wherein a first base plating layer and a second base plating layer are formed on the pattern region, so that diamond abrasive grains have different heights in the pattern region.

The plurality of base plating layers have a height difference of two or more stages, more preferably, two to five stages.

Metals applicable to the formation of the underlying plating layer according to the present invention include all kinds of metals that can be electroplated including Ni, Cu and the like and all kinds of metals that can be plated by chemical reactions such as electroless plating.

In addition, the metal applicable to the formation of the finish plating layer according to the present invention may include all kinds of metals capable of electroplating and chemical plating such as Ni, Cu, Pd, Cr, and the like.

In addition, the diamond abrasive grains applied to the present invention may be the same size or different.

According to the present invention, by controlling the height with respect to each of the diamond abrasive grains, it is possible to easily form individual diamond abrasive grains on a base material at a desired position, desired number, and desired height, and slurry and / or between neighboring diamond abrasive grains. It is possible to extend the flow space of the pad debris in the depth direction. In addition, the diamond abrasive grains can be formed in a desired position, a desired number, and a desired height, thereby implementing a CMP pad conditioner with improved cutting force.

1 is a view for explaining a manufacturing method of the CMP pad conditioner according to an embodiment of the present invention.
2 and 3 illustrate various forms of CMP pad conditioners that may be manufactured according to the method shown in FIG. 1.
4 is a view for explaining a manufacturing method of the CMP pad conditioner according to another embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. The following embodiments are provided as examples to ensure that the spirit of the present invention to those skilled in the art will fully convey. Accordingly, the present invention is not limited to the embodiments described below and may be embodied in other forms. And, in the drawings, the width, length, thickness, etc. of the components may be exaggerated for convenience. Like numbers refer to like elements throughout.

1 is a view for explaining a manufacturing method of the CMP pad conditioner according to an embodiment of the present invention.

Referring to FIG. 1A, a photoresist film P is first formed on a surface of a disk-shaped metal base material 10, and a mask M that locally covers the photoresist film P over the photoresist film P. Is located. An exposure process and a developing process of irradiating U.V (ultraviolet rays) to the photosensitive film P on the mask M are performed. The mask M includes a portion blocking light having a diameter (or width) and an area different from each other. In this embodiment, the photosensitive film P is preferably a dry film photoresist (DFR). For example, a portion not covered by the mask M by a negative method is cured by ultraviolet rays, and then, by a subsequent developing process, portions of the photoresist film P irradiated with the ultraviolet rays are formed on the base material 10. Remains on the surface.

By a process as shown in FIG. 1A, the photosensitive film P has the first opening P1 of the first diameter D1 and the second opening P2 of the second diameter D2 of FIG. 1. It is formed as shown in (b) of, through the first opening (P1) and the second opening (P2) the surface of the metal base material 10 is exposed in the form of an island in their corresponding area. The areas of the base material 10 exposed and defined by the first and second openings P1 and P2 of the photosensitive film P are areas where plating is performed by the processes described below. It includes the first region 12 and the second region 14, the area of which is determined differently by two diameters D2. At this time, the first diameter (D1) is larger than the second diameter (D2), in this embodiment, the first diameter (D1) is approximately 270㎛ and the second diameter (D2) is approximately 230㎛. However, since one diamond abrasive grain is disposed in each of the openings P1 and P2 as described below, the diameters of the openings P1 and P2 are not too large or smaller than the width of the diamond abrasive grains. It is preferred that they are defined differently within the range of, for example, 50 μm of the diamond abrasive grain size.

Next, as shown in (c) of FIG. 1, the first base plating layer 22 and the second base plating layer 24 are formed on the metal base material 10. In this case, the metal base material 10 may be plated on the first region 12 and the second region 14 having different surface areas by the first opening P1 and the second opening P2 of the photosensitive film P. Since the first base plating layer 22 is formed to have a first height H1 in the first region 12 having a relatively large area, the second base plating layer 24 has a relatively small area. The second region 14 is formed to have a second height H2 greater than the first height H1. It is well known in the art that the greater the surface area to be plated, the smaller the plating thickness (or height).

Next, as illustrated in FIG. 1D, one diamond abrasive grains 30 are disposed in each of the first under plating layer 22 and the second under plating layer 24. In FIG. 1D, two first base plating layers 22 and two second base plating layers 24 can be seen, and one diamond abrasive grain is formed in each of these base plating layers 22, 22, 24, and 24. It can be seen that 30) is arranged and set.

Next, as shown in FIG. 1E, the photoresist film P is removed, and then, as shown in FIG. 1F, the photosensitive film P is removed. The finish plating layer 40 is formed over the entire surface. The finish plating layer 40 covers the surface of the metal base 10 and the first and second base plating layers 22 and 24.

2 and 3 are diagrams for explaining various types of CMP pad conditioners that can be manufactured according to the method shown in FIG. 2 and 3 together show enlarged views, for convenience of explanation, the CMP pad conditioner in the manufacturing process rather than the finished CMP pad conditioner.

Referring to FIGS. 2 and 3, the CMP pad conditioner includes a plurality of pattern regions A having diamond abrasive grains attached thereto and gradually extending from the position close to the center of the base material to the outer edge or the position close thereto. , B), and neighboring pattern regions A, B are divided by a linear slurry passage C to which no diamond abrasive grains are attached. Note that in the present embodiment, the pattern regions have the same shape as described above, but may have an annular shape or other shapes.

At this time, the CMP pad conditioner illustrated in FIG. 2 includes a plurality of first base plating layers 22 having a first height H1 in the first pattern region A, and a second pattern region B in the second pattern region B. Diamond abrasive grains 30 having a second base plating layer 24 having a second height H2 greater than one height, so that the diamond abrasive grains 30 in the second pattern region B are diamond abrasive grains in the first pattern region A. FIG. It protrudes higher than 30 overall.

In contrast, the CMP pad conditioner illustrated in FIG. 3 has a first base plating layer 22 having a first height H1 and a second base plating layer having a second height H2 in one pattern region A. 24) are present together, and are formed such that the heights of the diamond abrasive grains 30 are different in the corresponding pattern region A. FIG.

4 is a flowchart illustrating a CMP pad conditioner manufacturing method according to another embodiment of the present invention.

Referring to FIG. 4A, the first opening portion P1 of the first diameter D1, the second opening portion P2 of the second diameter D2, and the third diameter D3 are formed on the metal base material 10. The photosensitive film P including the third opening P3 is positioned. In this case, the photoresist layer P may be formed to include the openings P1, P2, and P3 by an exposure and development process according to the previous embodiment. Alternatively, the photoresist may be replaced by a mask layer other than the photoresist, where the mask layer has openings of different diameters as described above.

Referring to FIG. 4B, the first region 12 and the second region 12 of the metal base material exposed to different areas by the first, second and third openings P1, P2 and P3 having different diameters ( 14 and the first under plated layer 22, the second under plated layer 24, and the third under plated layer 26 are formed in the third region 16. As in the previous embodiment, the first base plating layer 22, the second base plating layer 24, and the third base plating layer 26 are formed by one plating process on the metal base material 10. In this case, the plating height of the first base plating layer 22 is the lowest as H1, the second base plating layer 24 is the lowest as H2, and the third base plating layer 26 is the highest as H3.

Next, referring to FIG. 4C, the diamond abrasive grains 30 are disposed on the first base plating layer 22, the second base plating layer 24, and the third base plating layer 26, one by one. It is arranged in each of the first, second and third openings P1, P2, P3 of P). Diamond abrasive grains 30 may be temporarily or permanently attached on the undercoat layers 22, 24, and 26.

Next, referring to FIG. 4D, the photoresist film P used for the formation of the underplating layers 22, 24, and 26 having different heights and different areas, and for setting the diamond abrasive grains 30, is described. ) Is removed. Next, referring to FIG. 4E, the finish plating layer 40 is formed to entirely cover the surface of the base material 10 on which the diamond abrasive grains 30 are set. The finish plating layer 40 may serve to strongly adhere the diamond abrasive grains 30 to the surface of the base material 10.

In the upper part, it is divided into three base plated layers, that is, the first base plated layer 22, the second base plated layer 24, and the third base plated layer 26, depending on the height, one diamond abrasive grain 30, one for each base plated layer. Have been described for their placement. However, two or more underplating layers of the underplating layers supporting diamond abrasive grains one by one are included within the scope of the present invention.

According to the present invention, there is one diamond abrasive grain 30 in one underplating layer 22, 24 or 26. In the prior art in which a plurality of diamond abrasive grains are present on a common undercoating layer forming a pattern, a passage of slurry / or pad debris between the adjacent diamond abrasive grains 30 and 30 is deep on the common undercoating layer. Difficult to form in the direction of expansion. However, in the present invention, since the two base plating layers 22 and 24 are spaced between the adjacent diamond abrasive grains 30 and 30, a flow path for slurry / or pad debris is formed to correspond to the depth of the base plating layer. Can be.

According to the present invention, the CMP pad conditioner can be manufactured by arbitrarily adjusting the heights of the base plating layers supporting the diamond abrasive grains one by one on the metal base material. Accordingly, the height difference between the diamond abrasive grains between the patterns on the metal base material is two or more stages. Or two or more steps of diamond abrasive grains between the closest center and the center and far side, or two or more steps of diamond abrasive grains in the radial direction, or adjacent diamond abrasive grains in a pattern The advantage is that there is no limit to the height difference between the rows or to the height difference of the diamond abrasive grains as other designers desire.

10: base material 22, 24, 26: base plated layer
30: diamond abrasive grain P: photosensitive film
P1, P2, P3: opening

Claims (9)

In the manufacturing method of a CMP pad conditioner having diamond abrasive grains having a height difference,
(a) forming a mask layer having a plurality of openings having different areas on a surface of the metal base material;
(b) plating the surface of the base material on which the mask layer is formed to form base plating layers having different heights in the openings; And
and (c) disposing one diamond abrasive grain in each of the base plating layers having different heights to form a height difference between the diamond abrasive grains. The method according to claim 1, wherein step (a),
Forming a photoresist on the surface of the metal base material;
And removing the photoresist film to different sizes in the plurality of areas, thereby forming a mask layer including openings having different areas. The method of claim 1, comprising removing the mask layer after step (c). 4. The method of claim 3, further comprising forming a finish plating layer covering the surface of the metal base material from which the mask layer is removed and the base plating layers. 5. delete Metal base material;
A plurality of base plating layers formed on surfaces of the metal base materials at different heights; And
Comprising a diamond abrasive grains, one disposed in each of the plurality of base plating layer,
The plurality of base plating layers,
A first base plated layer having a first height and a first area,
And a second undercoat layer having a second height greater than the first height and a second area less than the first area. Metal base material;
A plurality of base plating layers formed on surfaces of the metal base materials at different heights; And
Comprising a diamond abrasive grains, one disposed in each of the plurality of base plating layer,
A plurality of pattern regions are included on the metal base material, wherein a plurality of first base plating layers are formed in a first pattern region among the plurality of pattern regions, and a second base plating layer is formed in a second pattern region among the plurality of pattern regions. And a plurality of diamond abrasive grains of the first pattern region and a diamond abrasive grain height of the second pattern region are different from each other. delete delete

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