KR101114774B1 - Light emitting module - Google Patents

Light emitting module Download PDF

Info

Publication number
KR101114774B1
KR101114774B1 KR1020100105527A KR20100105527A KR101114774B1 KR 101114774 B1 KR101114774 B1 KR 101114774B1 KR 1020100105527 A KR1020100105527 A KR 1020100105527A KR 20100105527 A KR20100105527 A KR 20100105527A KR 101114774 B1 KR101114774 B1 KR 101114774B1
Authority
KR
South Korea
Prior art keywords
light emitting
emitting device
temperature sensor
pad
emitting module
Prior art date
Application number
KR1020100105527A
Other languages
Korean (ko)
Inventor
조윤민
Original Assignee
엘지이노텍 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 엘지이노텍 주식회사 filed Critical 엘지이노텍 주식회사
Priority to KR1020100105527A priority Critical patent/KR101114774B1/en
Priority to EP11182413.2A priority patent/EP2447595B1/en
Priority to US13/242,915 priority patent/US9035326B2/en
Priority to JP2011208827A priority patent/JP2012094842A/en
Priority to CN201110305674.9A priority patent/CN102456681B/en
Application granted granted Critical
Publication of KR101114774B1 publication Critical patent/KR101114774B1/en

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19107—Disposition of discrete passive components off-chip wires

Landscapes

  • Led Device Packages (AREA)

Abstract

PURPOSE: A light emitting module is provided to secure the reliability of a device by directly mounting a package device in a cavity and improving the radiation efficiency of a light emitting device package. CONSTITUTION: A circuit board(100) comprises a metal plate(110), an insulating layer(140), a pad(135), and a guide pattern(130). A cavity(150), having a predetermined depth from the top side, is formed in the metal plate. The pad and guide pattern are electrically separated through a solder resist(120). A light emitting device package(200) is attached within the cavity of the circuit board. The light emitting device package comprises an insulating substrate(210), a plurality of pad parts(220), and a plurality of light emitting devices(250).

Description

Light emitting module {LIGHT EMITTING MODULE}

The present invention relates to a light emitting module.

In general, a circuit board is a circuit pattern formed of a conductive material such as copper on an electrically insulating board, and refers to a board immediately before mounting an electronic component related heating element. The circuit board as described above includes a semiconductor device and a heating device such as a light emitting diode (LED).

In particular, as circuit boards equipped with light emitting diodes are developed for automotive headlamps, heat resistance and heat transfer characteristics are required.

However, a device such as a light emitting diode emits serious heat, and when heat is not processed in a circuit board on which the heating element is mounted, the temperature of the circuit board on which the heating element is mounted increases, causing an inoperability and malfunction of the heating element. Not only does it lower the reliability of the product.

The embodiment provides a light emitting module for a vehicle headlamp having a new structure.

The embodiment provides a light emitting module for mounting a light emitting device package in a cavity of a circuit board on which a cavity is formed.

The embodiment provides a light emitting module having improved heat dissipation and light dust collection.

The embodiment provides an arrangement structure for controlling a current of the light emitting device package by sensing a temperature change of the light emitting device package from a temperature sensor.

Embodiments include a metal circuit board on which a cavity is formed; A light emitting device package including a nitride insulating substrate attached to the cavity of the metal circuit board, at least one pad portion formed on the insulating substrate, and at least one light emitting element attached to the pad portion; And a temperature sensor which is electrically separated from the light emitting device and whose resistance is changed by heat generation from the light emitting device.

According to the embodiment, the light emitting device package may be directly mounted in the cavity of the metal circuit board, thereby improving heat dissipation efficiency of the light emitting device package, thereby securing device reliability.

According to the embodiment, light may be collected in the emission direction by forming the guide protrusion and the solder resist in a color having a low light transmittance on the circuit board.

In addition, the embodiment may implement a fine circuit by forming the pad portion of the light emitting device package into a thin film through sputtering or the like.

In addition, the embodiment may sense the change in the temperature of the light emitting device package from the temperature sensor to control the current of the light emitting device package, it is possible to improve the detection performance by placing the temperature sensor in close proximity to the light emitting device.

1 is an exploded perspective view of a light emitting module according to a first embodiment.
2 is a combined top view of the light emitting module according to the first embodiment.
3 is a cross-sectional view taken along the line II ′ of the light emitting module of FIG. 2.
4 is a cross-sectional view of the light emitting module of FIG. 2 cut through II-II '.
5A to 5D show various application examples of the side cross section of the guide protrusion of FIG. 4.
6 is an enlarged view of the light emitting module of FIG. 3.
7 is a detailed cross-sectional view of a light emitting device formed in the light emitting module of FIG. 3.
8 is a circuit diagram of a light emitting module of the present invention.
9 is a cross-sectional view of a light emitting module according to a second embodiment of the present invention.
10 is a cross-sectional view of a light emitting module according to a third embodiment of the present invention.
11 is a cross-sectional view of a light emitting module according to a fourth embodiment of the present invention.

DETAILED DESCRIPTION Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art may easily implement the present invention. The present invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. In the drawings, parts irrelevant to the description are omitted in order to clearly describe the present invention, and like reference numerals designate like parts throughout the specification.

Throughout the specification, when a part is said to "include" a certain component, it means that it can further include other components, without excluding other components unless specifically stated otherwise.

In order to clearly illustrate the present invention in the drawings, thicknesses are enlarged in order to clearly illustrate various layers and regions, and parts not related to the description are omitted, and like parts are denoted by similar reference numerals throughout the specification .

Whenever a portion of a layer, film, region, plate, or the like is referred to as being "on" another portion, it includes not only the case where it is "directly on" another portion, but also the case where there is another portion in between. On the contrary, when a part is "just above" another part, there is no other part in the middle.

Hereinafter, a light emitting module according to a first embodiment of the present invention will be described with reference to FIGS. 1 to 7.

1 is an exploded perspective view of a light emitting module according to a first embodiment, FIG. 2 is a combined top view of the light emitting module according to the first embodiment, and FIG. 3 is a cross-sectional view of the light emitting module shown in FIG. 4 is a cross-sectional view of the light emitting module of FIG. 2 taken along line II-II ', and FIGS. 5A to 5D show various application examples of side cross-sections of the guide protrusion of FIG. 4.

1 to 4, the light emitting module 300 includes a circuit board 100 and a light emitting device package 200 in a cavity 150 of the circuit board 100.

The light emitting module 300 has a structure in which a light emitting device package 200 is mounted in a cavity 150 of a circuit board 100, and the light emitting device package 200 includes a plurality of light emitting devices 250 on a substrate 210. May be arranged in one row or more rows, and the plurality of light emitting devices 250 may be connected to each other in series or in parallel. Such technical features may be changed within the technical scope of the embodiments.

The circuit board 100 includes a metal plate 110, an insulating layer 140, a pad 135 connected to a circuit pattern, and a guide pattern 130.

The metal plate 110 is a heat conduction plate having high thermal conductivity, and may be formed of an alloy including copper, aluminum, silver, or gold, and preferably, an alloy including copper.

The metal plate 110 has a rod-shaped cuboid shape that is long in the longitudinal direction, and a cavity 150 having a predetermined depth from an upper surface thereof is formed.

The metal plate 110 may be formed in a cylindrical shape in addition to a rectangular parallelepiped shape, but is not limited thereto.

The cavity 150 is a mounting part for mounting the light emitting device package 200, and may be formed to have a larger area than the light emitting device package 200.

In this case, the thickness of the metal plate 110 may be about 1000 μm or more, and the depth of the cavity 150 may be about 300 μm or more.

An insulating layer 140 is formed on the top surface of the metal plate 110 to expose the cavity 150.

The insulating layer 140 may include a plurality of insulating layers, and some of the plurality of insulating layers may be connected to the metal plate 110, a circuit pattern (not shown), and a pad connected to the circuit pattern. It can function as the adhesive layer which adhere | attaches the 135 and the metal layer, such as the copper foil layer used as the base of the guide pattern 130. FIG.

The insulating layer 140 may include an epoxy-based or polyimide-based resin, and solid components such as fillers or glass fibers may be dispersed therein. Alternatively, the insulating layer 140 may be an inorganic material such as an oxide or a nitride. .

The guide pattern 130 and the pad 135 are formed on the insulating layer 140.

The guide pattern 130 and the pad 135 may be formed of an alloy including copper formed by etching the copper foil layer, and the surface of the pad 135 may include an alloy including nickel, silver, gold, or palladium. Can be surface treated.

A solder resist 120 is formed on the insulating layer 140 to fill the circuit pattern and expose the guide pattern 130 and the pad 135.

The solder resist 120 is applied to the entire surface of the circuit board 100 and is colored in a dark color having low light transmittance and low reflectivity in order to improve scattering of light by absorbing scattered light. For example, the solder resist 120 may be black.

Meanwhile, the pad 135 and the guide pattern 130 are electrically separated by the solder resist 120 as shown in FIG. 4.

In detail, the guide pattern 130 surrounds the cavity 150 and is spaced apart from the cavity 150 by a predetermined distance d1 and d2.

The pad 135 is a pad 135 for bonding the light emitting device package 200 and the wire 262 mounted in the cavity 150, and is spaced apart from the cavity 150 and the guide pad 130. Exposed within the distance (d1, d2) is formed. Thus, the guide pattern 130 is separated from the region where the pad 135 is formed.

In this case, the distances d1 and d2 spaced apart between the guide pad 130 and the cavity 150 may include the distance d1 of the side where the pad 135 is formed and the pad 135 are not formed. The distances d2 of the sides may be different from each other.

That is, the distance d1 of the first side on which the pad 135 is formed may be greater than the distance d2 of the second side on which the pad 135 is not formed.

A guide protrusion 160 is formed on the guide pad 130 to surround the cavity 150.

The guide protrusion 160 connects two guide pads 130 that are separated to form a closed loop.

The guide protrusion 160 may be formed of an insulating inorganic material, and formed of an impermeable material. Preferably it may be an impermeable material, such as bulk aluminum oxide, and may have a height of about 800 μm. The guide protrusion 160 is a structure for condensing light emitted from the light emitting device package 200 and may function as an absorbing layer absorbing scattered light.

The guide protrusion 160 may have a curved side cross section 160a as shown in FIG. 5A, and may have a trapezoidal side cross section 160b as shown in FIG. 5B. When the side cross section 160b is trapezoidal, the area of the upper surface may be smaller than the area of the lower surface. In addition, the guide protrusion 160 may have a rectangular side cross section 160c as shown in FIGS. 5C and 3.

Meanwhile, the guide protrusion 160 may have a rectangular side cross section 160d as illustrated in FIG. 5D, and may include a plurality of convex patterns 161 on the surface thereof. The convex pattern 161 may have an irregular pattern size and arrangement, and the convex pattern 161 may be formed on the front surface of the guide protrusion 160. Alternatively, the convex pattern 161 may be formed only on the inner side facing the cavity 150. It may be formed.

The convex pattern 161 may be formed on the guide protrusion 160 having the side end surfaces 160a and 160b having a convex shape or a trapezoid as shown in FIGS. 5A to 5B.

The guide protrusion 160 may be attached to the solder resist 120 and the adhesive layer 165, and the adhesive layer 165 may support the side surface of the guide protrusion 160 and adhere to the solder resist 120. . The adhesive layer 165 may be formed by applying and sintering an adhesive paste containing silicon oxide.

In the meantime, the light emitting device package 200 is attached to the cavity 150 of the circuit board 100.

Hereinafter, the light emitting device package 200 will be described in detail with reference to FIGS. 6 and 7.

6 is an enlarged view of the light emitting module of FIG. 3, and FIG. 7 is a detailed cross-sectional view of the light emitting device formed in the light emitting module of FIG. 3.

The light emitting device package 200 includes an insulating substrate 210, a plurality of pad parts 220 formed on the insulating substrate 210, and a plurality of light emitting devices 250 attached to the pad part 220. .

The insulating substrate 210 has a rectangular parallelepiped shape having a cross-sectional area that is equal to or smaller than the bottom surface of the cavity 150 so that the insulating substrate 210 may be mounted in the cavity 150.

The insulating substrate 210 is a nitride substrate having high thermal conductivity, and preferably, may be an aluminum nitride substrate. The insulating substrate may have a thermal conductivity of 170 Kcal / m? H? The nitride insulating substrate 210 may have a thickness of 300 μm or more, preferably 350 μm or more, and may have a thickness greater than the depth of the cavity 150 to protrude out of the cavity 150.

As illustrated in FIG. 6, the insulating substrate 210 is attached to the cavity 150 by a high thermal conductive adhesive paste 271 applied to the bottom surface of the cavity 150. The adhesive paste 271 may be a conductive paste including AuSn.

The adhesive paste 271 is thinly dispersed under the bottom surface of the insulating substrate 210 by heat and pressure, and a fillet 270 is formed to surround a portion of the side surface of the insulating substrate 210. 210).

As described above, heat insulation can be ensured by directly attaching the insulating substrate 210 having high thermal conductivity to the metal plate 110 of the circuit board 100.

Meanwhile, a plurality of pad parts 220 are formed on the upper surface of the insulating substrate 210.

The plurality of pad parts 220 may be disposed in a row according to the arrangement of the light emitting devices 250.

The pad unit 220 has the same number as that of the light emitting device 250, and five light emitting devices 250 forming one row are formed in the light emitting device package 200 as shown in FIGS. 1 to 4. In this case, the pad unit 220 is composed of five in a row.

The pad part 220 includes an electrode area to which the light emitting device 250 is attached and a connection area 221 for wire bonding with the pad 135 of the adjacent light emitting device 250 or the circuit board 100. .

The electrode region may have a quadrangular shape along the shape of the area of the light emitting device 250, and the connection region 221 may extend from the electrode region to protrude toward the adjacent pad portion 220. .

In FIGS. 1 and 2, the connection region 221 is illustrated to have a quadrangular shape. However, the connection region 221 may be formed in various shapes.

Each light emitting device 250 is attached to an electrode region of the pad part 220.

The light emitting device 250 is a vertical light emitting diode, one end of which is attached to the pad part 220, and the other end of the light emitting device 250 is bonded through a connection area 221 and a wire 260 of the adjacent pad part 220. It can have a serial connection.

As described above, when the plurality of light emitting devices 250 are connected in series, the connection area 221 of the pad part 220 in the first row is connected to the pad 135 of the circuit board 100 adjacent through the wire 262. It is connected.

In this case, the upper surface of the light emitting device package 200 includes a pad island 225 adjacent to the pad unit 220 to which the last light emitting device 250 is attached and including only the connection region 221. .

The pad island 225 is connected to the light emitting device 250 of the neighboring pad unit 220 through a wire 260, and connects the pad 135 and the wire 262 of the neighboring circuit board 100. Connected through.

The pad part 220 and the pad island 225 are disposed toward the zener diode 170 and the temperature sensor 180 such that the connection area 221 is close to the pad 135 of the circuit board 100. .

In this case, the pad part 220 and the pad island 225 are formed of a plurality of metal layers 222, 223, and 224 as shown in FIG. 6.

The pad part 220 and the pad island 225 have a lamination structure of the first metal layer 222, the second metal layer 223, and the third metal layer 224, and each metal layer 222, 223, 224 is titanium, nickel, or gold. Or it may be formed of an alloy containing platinum.

Preferably, the first metal layer 222 is formed of an alloy containing titanium, the second metal layer 223 is formed of an alloy containing nickel, and the third metal layer 224 is formed of an alloy containing gold. The sum of the total thicknesses of the first metal layer to the third metal layer 222, 223, 224 may satisfy 0.45 μm to 0.75 μm.

The first to third metal layers 222, 223, and 224 may be formed by thin film deposition such as sputtering, ion beam deposition, and electron beam deposition. By forming the first to third metal layers 222, 223, and 224 in a thin film to satisfy a few μm, a fine pattern may be implemented in the light emitting device package 200.

The light emitting device 250 is attached to the electrode area of the pad part 220. The light emitting device 250 may include a conductive adhesive layer 252 below, and the conductive adhesive layer 252 may be a conductive paste including AuSn. The conductive adhesive layer 252 has a thickness of 30 μm or less, preferably 25 μm or less.

The light emitting device 250 may selectively include a semiconductor light emitting device manufactured using a compound semiconductor of Group III and Group V elements, such as AlInGaN, InGaN, GaN, GaAs, InGaP, AllnGaP, InP, InGaAs, and the like. have.

In addition, each light emitting device 250 may be composed of a blue LED chip, yellow LED chip, green LED chip, red LED chip, UV LED chip, amber LED chip, blue-green LED chip, etc. It may be a blue LED chip.

The light emitting device 250 may include the conductive support substrate 252, the bonding layer 253, the second conductive semiconductor layer 255, the active layer 257, and the first conductive semiconductor layer 259 as shown in FIG. 7. Include.

 The conductive support substrate 252 may be formed of a metal or an electrically conductive semiconductor substrate.

 A group III-V nitride semiconductor layer is formed on the substrate 252. The semiconductor growth equipment includes an electron beam evaporator, physical vapor deposition (PVD), chemical vapor deposition (CVD), plasma laser deposition (PLD), and dual thermal It can be formed by a dual-type thermal evaporator sputtering, metal organic chemical vapor deposition (MOCVD), etc., but is not limited to such equipment.

 The bonding layer 253 may be formed on the conductive support substrate 252. The bonding layer 253 bonds the conductive support substrate 252 to the nitride semiconductor layer. In addition, the conductive support substrate 252 may be formed by a plating method instead of a bonding method, and in this case, the bonding layer 253 may not be formed.

 A second conductive semiconductor layer 255 is formed on the bonding layer 253, and the second conductive semiconductor layer 255 is electrically connected to the electrode region of the pad part 220.

 The second conductivity type semiconductor layer 255 may be formed of at least one of a group III-V group compound semiconductor, for example, GaN, InN, AlN, InGaN, AlGaN, InAlGaN, and AlInN. The second conductive semiconductor layer 323 may be doped with a second conductive dopant, and the second conductive dopant may be a p-type dopant, and may include Mg, Zn, Ca, Sr, and Ba.

 The second conductive semiconductor layer 255 may be formed of a p-type GaN layer having a predetermined thickness by supplying a gas including a p-type dopant such as NH 3, TMGa (or TEGa), and Mg.

 The second conductive semiconductor layer 255 includes a current spreading structure in a predetermined region. The current spreading structure includes semiconductor layers in which the current spreading speed in the horizontal direction is higher than the current spreading speed in the vertical direction.

 The current spreading structure can include, for example, semiconductor layers having a difference in concentration or conductivity of the dopant.

 The second conductivity-type semiconductor layer 255 may supply a carrier diffused in a uniform distribution to another layer thereon, for example, the active layer 257.

 The active layer 257 is formed on the second conductive semiconductor layer 255. The active layer 257 may be formed in a single quantum well or multiple quantum well (MQW) structure. One period of the active layer 257 may optionally include a period of InGaN / GaN, a period of AlGaN / InGaN, a period of InGaN / InGaN, or a period of AlGaN / GaN.

 A second conductive cladding layer (not shown) may be formed between the second conductive semiconductor layer 255 and the active layer 257. The second conductive cladding layer may be formed of a p-type GaN-based semiconductor. The second conductivity type clad layer may be formed of a material having a band gap higher than that of the well layer.

 The first conductivity type semiconductor layer 259 is formed on the active layer 257. The first conductive semiconductor layer 259 may be implemented as an n-type semiconductor layer doped with a first conductive dopant. The n-type semiconductor layer may be formed of any one of compound semiconductors such as GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN, and the like. The first conductivity type dopant is an n-type dopant, and at least one of Si, Ge, Sn, Se, Te, and the like may be added.

 For example, the first conductive semiconductor layer 255 may supply a gas containing an n-type dopant such as NH 3, TMGa (or TEGa), and Si to form an n-type GaN layer having a predetermined thickness.

In addition, the second conductive semiconductor layer 259 may be a p-type semiconductor layer, and the first conductive semiconductor layer 259 may be an n-type semiconductor layer. The light emitting structure may be implemented as any one of an n-p junction structure, a p-n junction structure, an n-p-n junction structure, and a p-n-p junction structure. Hereinafter, for the purpose of description, the first conductive semiconductor layer will be described as an example of the uppermost layer of the semiconductor layer.

 A first electrode and / or an electrode layer (not shown) may be formed on the first conductivity type semiconductor layer 259. The electrode layer may be an oxide or nitride-based light-transmitting layer such as indium tin oxide (ITO), indium tin oxide nitride (ITON), indium zinc oxide (IZO), indium zinc oxide nitride (IZON), indium zinc tin oxide (IZTO), or IAZO. (indium aluminum zinc oxide), IGZO (indium gallium zinc oxide), IGTO (indium gallium tin oxide), AZO (aluminum zinc oxide), ATO (antimony tin oxide), GZO (gallium zinc oxide), IrOx, RuOx, NiO It may be selected from materials. The electrode layer may function as a current spreading layer capable of diffusing current.

Although the light emitting device package 200 of FIGS. 1 to 7 has been described as having a plurality of vertical light emitting devices 250 connected in series, in contrast, the vertical light emitting devices 250 may be connected in parallel. It is also possible that the light emitting device 250 is connected in series or in parallel.

As described above, the light emitting module 300 of FIGS. 1 to 7 uses the insulating substrate 210 of the light emitting device package 200 as a nitride, and the metal plate 110 of the insulating substrate 210 and the circuit board 100. ) Is directly bonded through a thermally conductive adhesive paste 271, thereby ensuring heat dissipation, so that the pad portion 220 on the light emitting device package 200 is formed by patterning a thick copper metal. By forming a thin metal film, a fine pattern can be formed.

Meanwhile, referring back to FIGS. 1 and 2, a zener diode 170 and a temperature sensor 180 are formed on the solder resist 120 on the upper surface of the metal plate 110 of the circuit board 100.

The zener diode 170 and the temperature sensor 180 are formed outside the guide protrusion 160 as shown in FIG. 1.

8 is a circuit diagram of a light emitting device, a zener diode and a temperature sensor of the present invention.

Referring to FIG. 8, the zener diode 170 is connected in parallel with the plurality of light emitting devices 250 of the light emitting device package 200 to prevent a reverse voltage that may be applied to the light emitting device package 200. .

That is, the zener diode 170 and the light emitting diodes 250 are connected in parallel between the first positive voltage V1 + and the first negative voltage V1-.

The temperature sensor 180 may be a thermistor, which is a variable resistor whose resistance value changes with temperature, and preferably, may be a negative temperature coefficient (NTC), in which a specific resistance decreases as the temperature increases.

The temperature sensor 180 receives a second positive voltage V2 + and a second negative voltage V2- that are separate voltages from the zener diode 170 as a positive terminal, and receives the light from the light emitting device 250. The changed output current flows by varying the resistance value according to the heat released.

First and second positive voltages V1 + and V2 + and first and second negative voltages V1 and V2 are formed in the edge region of the upper surface of the metal plate 110 by the Zener diode 170 and the temperature sensor 180. A connector 190 is provided that provides-).

The connector 190 has one end connected to a plurality of wires 195 for receiving a signal from the outside, and the other end connected to a circuit pattern of the circuit board 100 so that the zener diode 170 and the temperature sensor 180 are connected. And the voltages V1 +, V2 +, V1-, and V2- are applied to the light emitting device package 200, and a current output from the temperature sensor 180 flows to the outside.

An external controller (not shown) senses the heat generated by the light emitting device 250 according to the current value output from the temperature sensor 180 and applies the first positive voltage V1 + applied to the light emitting device 250. And the first negative voltage V1-.

On the other hand, unlike FIG. 8, the temperature sensor 180 may be connected in series between the first positive voltage V1 + and the zener diode 170. As the resistance of the sensor 180 changes, the voltage distribution changes.

Accordingly, the amount of light emitted from the light emitting device 250 may be controlled by varying the voltage transmitted to the light emitting device 250 according to the resistance of the temperature sensor 180.

In this case, the temperature sensor 180 may be formed close to the cavity 150 in which the light emitting device package 200 is formed, and the distance from the cavity 150 to the temperature sensor 180 is within about 5 mm. Can be.

Hereinafter, various embodiments in which the temperature sensor 180 and the light emitting device package 200 are disposed in close proximity will be described.

9 is a cross-sectional view of a light emitting module according to a second embodiment of the present invention.

In the description of the second embodiment, the same parts as in the first embodiment will be referred to the first embodiment, and redundant description thereof will be omitted.

Referring to FIG. 9, the circuit board 100 of the light emitting module 300A is the same as the circuit board 100 of the first embodiment, and the light emitting device package 200 is the same as the light emitting device package 200 of the first embodiment. Do.

That is, the circuit board 100 includes a metal plate 110, an insulating layer 140, a guide pattern 130, a pad 135, and a solder resist 120 covering the insulating layer 140.

The metal plate 110 is formed with a cavity 150 having a predetermined depth from an upper surface.

The cavity 150 is a mounting portion for mounting the light emitting device package 200. The cavity 150 is formed to have a larger area than the light emitting device package 200, and thus the inner surface of the cavity 150 and the light emitting device package 200. A space is formed between them.

The solder resist 120 is applied to the entire surface of the circuit board 100 and is colored in a dark color having low light transmittance and low reflectivity in order to improve scattering of light by absorbing scattered light.

A guide protrusion 160 is formed on the guide pad 130 to surround the cavity 150. The guide protrusion 160 connects two guide pads 130 that are separated to form a closed loop.

The light emitting device package 200 includes an insulating substrate 210, a plurality of pad parts 220 formed on the insulating substrate 210, and a plurality of light emitting devices 250 attached to the pad part 220. . In this case, the temperature sensor 180A is attached to the insulating substrate 210 of the light emitting device package 200. The temperature sensor 180A is attached to a sensor pad 228 that is electrically separated from the pad portion 220.

The temperature sensor 180A is a thermistor which is a variable resistor whose resistance value changes with temperature. Preferably, the temperature sensor 180A may be a negative temperature coefficient (NTC) whose specific resistance decreases as the temperature increases.

The electrical connection between the temperature sensor 180A and the light emitting device 250 is the same as that of FIG. 8.

In this case, the temperature sensor 180A is mounted on the same insulating substrate 210 as the light emitting device 250 so that the temperature sensor 180A accurately detects a temperature change caused by heat generated from the light emitting device 250. It is disposed in close proximity to the light emitting device 250.

One end of the temperature sensor 180A may be electrically connected to the sensor pad 228, and the other end thereof may be connected to a pad of the circuit board 100 through a wire. In contrast, the temperature sensor 180A may be insulated from the sensor pad 228. Both ends may be connected to pads of the circuit board 100 through respective wires.

 The sensor pad 228 may be formed of a plurality of thin film metal layers in the same manner as the pad part 220.

On the insulating substrate 210, the temperature sensor 180A receives a second positive voltage V2 + and a second negative voltage V2- different from the zener diode 170 and from the light emitting device 250. The changed output current flows by varying the resistance value according to the heat released.

10 is a cross-sectional view of a light emitting module according to a third embodiment of the present invention.

In the description of the third embodiment, the same parts as those of the first embodiment are referred to the first embodiment, and redundant description thereof will be omitted.

Referring to FIG. 10, the circuit board 100 of the light emitting module 300B includes a metal plate 110, an insulating layer 140, a guide pattern 130, and a solder resist 120 covering the insulating layer 140. Include.

The metal plate 110 is formed with a cavity 150 having a predetermined depth from an upper surface.

The cavity 150 is a mounting portion for mounting the light emitting device package 200. The cavity 150 is formed to have a larger area than the light emitting device package 200, and thus the inner surface of the cavity 150 and the light emitting device package 200. A space is formed between them.

The temperature sensor 180B is embedded in the insulating layer 140.

The insulating layer 140 includes a plurality of insulating layers 141, 142, and 143, and fills the temperature sensor 180B between the insulating layers 141, 142, and 143.

In detail, a first insulating layer 141 is formed on the metal plate 110, and a temperature sensor 180B is formed on the first insulating layer 141.

A second insulating layer 142 is formed on the first insulating layer 141 to fill the temperature sensor 180B, and is connected to the temperature sensor 180B on the second insulating layer 142. The pattern 138 is formed.

The circuit pattern 138 is electrically connected to the temperature sensor 180B through vias formed in the second insulating layer 142 to form a second positive voltage V2 + or a second negative voltage V2-. ) Is applied.

A third insulating layer 143 is formed on the second insulating layer 142 to cover the circuit pattern 138, and a solder resist 120 is formed on the third insulating layer 143.

 In the above, the insulating layer 140 has been described as having three layered structures, that is, the first to third insulating layers 141, 142, and 143, but it is apparent that the insulating layer 140 may be formed of a plurality of layers according to a circuit design.

In this case, the temperature sensor 180B may be buried in an upper insulating layer of the plurality of insulating layers 141, 142, and 143 in order to be disposed close to the light emitting device 250. It may be formed inwardly and disposed close to the cavity 150.

11 is a cross-sectional view of a light emitting module according to a fourth embodiment of the present invention.

Referring to FIG. 11, in describing the fourth embodiment, the same parts as those in the first embodiment are referred to the first embodiment, and redundant description thereof will be omitted.

Referring to FIG. 11, the circuit board 100 of the light emitting module 300C is the same as the circuit board 100 of the first embodiment.

That is, the circuit board 100 includes a metal plate 110, an insulating layer 140, a guide pattern 130, a pad 135, and a solder resist 120 covering the insulating layer 140.

A cavity 150 having a predetermined depth is formed from an upper surface of the metal plate 110, and a light emitting device package 200 is attached to the cavity 150.

The guide protrusion 160 surrounding the cavity 150 is formed on the metal plate 110, and a zener diode 170 and a temperature sensor 180 are formed outside the guide protrusion 160.

The light emitting device package 200 includes an insulating substrate 210, a plurality of pad parts 220C formed on the insulating substrate 210, and a plurality of light emitting devices 250 attached to the pad part 220C. .

A plurality of pad portions 220C is formed on the upper surface of the insulating substrate 210.

The plurality of pad parts 220C may be disposed in a row according to the arrangement of the light emitting devices 250.

The pad part 220C includes an electrode region to which the light emitting element 250 is attached, and a connection region 221C for wire bonding with the pad 135 of the adjacent light emitting element 250 or the circuit board 100. .

The electrode region may have a quadrangular shape along the shape of the area of the light emitting device 250, and the connection region 221C may extend from the electrode region to protrude toward the adjacent pad portion 220C. .

Each light emitting device 250 is attached to an electrode region of the pad portion 220C.

The light emitting device 250 is a vertical light emitting diode, one end of which is attached to the pad part 220C, and the other end of which is bonded to the connection area 221C of the adjacent pad part 220C through a wire 260. It can have a serial connection.

As described above, when the plurality of light emitting devices 250 are connected in series, the upper surface of the light emitting device package 200 is adjacent to the pad portion 220C to which the first light emitting device 250 is attached. Pad island 225C including only).

The connection region 221C of the pad portion 22C0 in the last row is connected to the pad 135 of the circuit board 100 adjacent through the wire 262.

In this case, the pad portion 220C and the pad island 225C may have an electrode region of the pad portion 220C facing the temperature sensor 180 so that the light emitting device 250 is close to the temperature sensor 180. The region 221C is formed in a direction opposite to the temperature sensor 180.

Thus, unlike FIGS. 1 and 2, the light emitting device 250 is disposed toward the temperature sensor 180 such that a distance between the temperature sensor 180 of the circuit board 100 and the light emitting device 250 is close to each other. By doing so, the sensing capability of the temperature sensor 180 is improved.

Although the embodiments of the present invention have been described in detail above, the scope of the present invention is not limited thereto, and various modifications and improvements of those skilled in the art using the basic concepts of the present invention defined in the following claims are also provided. It belongs to the scope of rights.

Light emitting module 300, 300A, 300B, 300C
Circuit Board 100
LED Package 200
Light emitting element 250

Claims (14)

A metal circuit board on which a cavity is formed;
A light emitting device package including a nitride insulating substrate attached to the cavity of the metal circuit board, at least one pad portion formed on the insulating substrate, and at least one light emitting element attached to the pad portion;
A temperature sensor which is electrically separated from the light emitting device and whose resistance is changed by heat generation from the light emitting device; And
Guide protrusions surrounding the cavity on the metal circuit board
Light emitting module comprising a. The method of claim 1,
The thermal conductivity of the nitride insulating substrate is more than 170 Kcal / m? H? ℃ light emitting module.
delete The method of claim 1,
The metal circuit board,
Metal plate,
An insulating layer on the metal plate,
A substrate pad electrically connected to a pad portion of the light emitting device package on the insulating layer;
And a cover layer exposing the substrate pad on the insulating layer. The method of claim 1,
The temperature sensor is a light emitting module formed within 5mm from the cavity. The method of claim 1,
The temperature sensor is a light emitting module formed to the outside of the guide projection. The method of claim 1,
The temperature sensor is a light emitting module mounted on the light emitting device package. The method of claim 4, wherein
The temperature sensor is a light emitting module embedded in an insulating layer of the circuit board. The method of claim 8,
The temperature sensor embedded in the insulating layer is formed in the interior of the guide projection light emitting module. The method of claim 1,
The pad portion of the light emitting device package
An electrode region to which the light emitting element is attached;
A light emitting module protruding from the electrode region and including a connection region wire bonded. The method of claim 10,
The light emitting module is disposed so that the electrode area of the pad portion toward the temperature sensor. The method of claim 1,
The temperature sensor is a light emitting module comprising NTC. The method of claim 1,
The light emitting module is a plurality of light emitting elements are connected in series. The method of claim 1,
And a Zener diode connected in parallel with the light emitting device on the circuit board.
KR1020100105527A 2010-10-27 2010-10-27 Light emitting module KR101114774B1 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1020100105527A KR101114774B1 (en) 2010-10-27 2010-10-27 Light emitting module
EP11182413.2A EP2447595B1 (en) 2010-10-27 2011-09-22 Light emitting module
US13/242,915 US9035326B2 (en) 2010-10-27 2011-09-23 Light emitting module
JP2011208827A JP2012094842A (en) 2010-10-27 2011-09-26 Light emitting module
CN201110305674.9A CN102456681B (en) 2010-10-27 2011-09-29 Light emitting module

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020100105527A KR101114774B1 (en) 2010-10-27 2010-10-27 Light emitting module

Publications (1)

Publication Number Publication Date
KR101114774B1 true KR101114774B1 (en) 2012-03-13

Family

ID=46140949

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020100105527A KR101114774B1 (en) 2010-10-27 2010-10-27 Light emitting module

Country Status (1)

Country Link
KR (1) KR101114774B1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101423514B1 (en) * 2013-02-01 2014-07-29 주식회사 포스코 Light emitting diode package and light emitting apparatus of use it
TWI489056B (en) * 2012-03-21 2015-06-21 Young Lighting Technology Inc Light source module

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20050102395A (en) * 2004-04-22 2005-10-26 엘지전자 주식회사 Plasma display panel and method of removing afterimage in the same
JP2006253288A (en) 2005-03-09 2006-09-21 Fuji Photo Film Co Ltd Light emitting device and manufacturing method thereof
JP2007324547A (en) * 2006-06-05 2007-12-13 Fujikura Ltd Light emitting diode light source, illuminator, display unit, and traffic signal
JP2009533860A (en) * 2006-04-10 2009-09-17 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ Light emitting diode module

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20050102395A (en) * 2004-04-22 2005-10-26 엘지전자 주식회사 Plasma display panel and method of removing afterimage in the same
JP2006253288A (en) 2005-03-09 2006-09-21 Fuji Photo Film Co Ltd Light emitting device and manufacturing method thereof
JP2009533860A (en) * 2006-04-10 2009-09-17 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ Light emitting diode module
JP2007324547A (en) * 2006-06-05 2007-12-13 Fujikura Ltd Light emitting diode light source, illuminator, display unit, and traffic signal

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI489056B (en) * 2012-03-21 2015-06-21 Young Lighting Technology Inc Light source module
US9557470B2 (en) 2012-03-21 2017-01-31 Young Lighting Technology Inc. Light source module
KR101423514B1 (en) * 2013-02-01 2014-07-29 주식회사 포스코 Light emitting diode package and light emitting apparatus of use it

Similar Documents

Publication Publication Date Title
US9035326B2 (en) Light emitting module
US10546977B2 (en) Light emitting device, light emitting device package including the device, and lighting apparatus including the package
US9478526B2 (en) Light emitting module
US9472742B2 (en) Light emitting device and light unit having the same
CN105529387B (en) Light emitting device package and lighting device including the encapsulation
KR101666442B1 (en) Light emitting diode and Light emitting device comprising the same
CN107924968B (en) Light emitting element, light emitting element package including the same, and light emitting device including the same
US9172004B2 (en) Light emitting device package
JP6810927B2 (en) Light emitting element package and lighting equipment including it
KR101114774B1 (en) Light emitting module
KR101933016B1 (en) Light emitting module
KR101172203B1 (en) Light emitting module
KR102455091B1 (en) Light emitting device and light emitting device package including the device
KR101154646B1 (en) Light emitting module
KR101843426B1 (en) Light emitting module
KR102251225B1 (en) Light source module
KR101734544B1 (en) Light emitting device package
KR20130027271A (en) Light emitting module
KR102326926B1 (en) Light emitting device, and lighting emitting device package
KR101540762B1 (en) Luminous element and luminous element package
KR101842177B1 (en) Light emitting device
KR101892923B1 (en) The light emitting device
KR20140104719A (en) luminous element and luminous element package

Legal Events

Date Code Title Description
A201 Request for examination
A302 Request for accelerated examination
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20150107

Year of fee payment: 4

FPAY Annual fee payment

Payment date: 20160107

Year of fee payment: 5

FPAY Annual fee payment

Payment date: 20170105

Year of fee payment: 6

FPAY Annual fee payment

Payment date: 20180105

Year of fee payment: 7

FPAY Annual fee payment

Payment date: 20190114

Year of fee payment: 8