KR101087901B1 - Nitride semiconductor light emitting diode and manufacturing method thereof - Google Patents
Nitride semiconductor light emitting diode and manufacturing method thereof Download PDFInfo
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- KR101087901B1 KR101087901B1 KR20090073856A KR20090073856A KR101087901B1 KR 101087901 B1 KR101087901 B1 KR 101087901B1 KR 20090073856 A KR20090073856 A KR 20090073856A KR 20090073856 A KR20090073856 A KR 20090073856A KR 101087901 B1 KR101087901 B1 KR 101087901B1
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Abstract
The present invention relates to a nitride semiconductor light emitting device capable of preventing the light extraction efficiency of the light emitting device due to total internal reflection from being lowered and a manufacturing method thereof. According to the present invention, the nitride semiconductor light emitting device includes a substrate, a nitride thin film formed on the substrate, a reflective portion formed between the substrate and the nitride thin film to prevent total reflection of light, and formed to cover the reflective portion, and reflected upon formation of the nitride thin film. It is characterized by including a protective film to prevent the disappearance of negative. As a result, the light-extraction efficiency can be increased by preventing the disappearance of the reflector when the nitride thin film is formed by the protective film wrapped around the reflector to reduce total internal reflection, thereby improving the reliability of the product.
Nitride, total reflection, light emitting element, cladding layer, protective film
Description
The present invention relates to a nitride semiconductor light emitting device and a method of manufacturing the same, and more particularly, to form a protective film so as to prevent the disappearance of the reflective material and the nitride to prevent the light extraction efficiency of the light emitting device due to total internal reflection decreases A semiconductor light emitting device and a method of manufacturing the same.
In general, light emitting diodes (LEDs) are typically red, green, and blue light emitting diodes corresponding to three primary colors of light. Then, the light emitting diodes of various colors such as white are manufactured using the red, green, and blue light emitting diodes.
Among these red, green, and blue light emitting diodes, blue light emitting diodes have short wavelengths and high energy levels, and thus, various production methods have been proposed.
In the blue light emitting diode manufacturing method, a GaN (gallium nitride) thin film is generally formed on a substrate, and then an n-GaN semiconductor layer, an active layer for emitting light, and a p-GaN semiconductor layer are sequentially formed. Then, a mesa etching is performed to arrange an electrode for applying a current to the n-GaN semiconductor layer, and then electrodes are disposed on the n-GaN semiconductor layer and the p-GaN semiconductor layer, respectively.
Meanwhile, when the nitride semiconductor light emitting device is manufactured as described above, a problem occurs in that light extraction efficiency is lowered due to total internal reflection, and thus a reflective material that prevents total internal reflection is interposed between the substrate and the GaN thin film.
However, when the GaN thin film is formed on the substrate, the reflective material disappears due to the growth of the GaN thin film, and thus the light extraction efficiency is not overcome. Therefore, there is a demand for a manufacturing technology and method for preventing the disappearance of the reflective material when forming a GaN thin film.
Accordingly, an object of the present invention is to provide a nitride semiconductor light emitting device capable of forming a reflective material and preventing the light extraction efficiency from being lowered by total internal reflection, and a method of manufacturing the same.
In addition, another object of the present invention is to provide a nitride semiconductor light emitting device and a method of manufacturing the improved structure and manufacturing method to prevent the disappearance of the reflective material during the growth of the GaN thin film.
The objects of the present invention are not limited to the above-mentioned objects, and other objects that are not mentioned will be clearly understood by those skilled in the art from the following description.
According to the present invention, there is provided a solution for solving the above problems, wherein a nitride semiconductor light emitting device includes a substrate, a nitride thin film formed on the substrate, and a reflection formed between the substrate and the nitride thin film to prevent total reflection of light. And a protective film which is formed to cover the reflecting part and prevents the disappearance of the reflecting part when the nitride thin film is formed.
Here, the substrate may include any one of silicon (Si), silicon carbide (SiC), and sapphire (Al 2 O 3 ).
The reflector may include any one of platinum (Pt), palladium (Pd), silver (Ag), and aluminum (Al).
The protective layer may include any one of silicon oxide (SiO 2 ) and silicon nitride (Si 3 N 4 ).
The protective film is preferably coated on the outer surface of the reflecting portion patterned on the substrate.
The protective film is coated on the reflecting portion composed of particles, and is preferably laminated on the substrate together with the reflecting portion.
On the other hand, according to the present invention, in the method for manufacturing a nitride semiconductor light emitting device according to the present invention, (a) forming a reflective portion on the substrate, (b) a protective film to surround the outer surface of the reflective portion And (c) growing a nitride thin film on the passivation layer.
Here, in the step (b), it is preferable that the protective film coats the surface of the reflecting portion patterned on the substrate.
On the other hand, according to the present invention, in the method for manufacturing a nitride semiconductor light emitting device, (a) preparing a reflector consisting of particles, (b) coating the reflector with a protective film, (c) stacking the reflector coated with the protective film on a substrate, and (d) growing a nitride thin film on the reflector. .
Specific details of other embodiments are shown and shown in the detailed description and drawings.
Therefore, according to the solution of the above problem, the nitride semiconductor light emitting device is provided with a reflector that can reduce the total internal reflection during manufacturing, it is possible to prevent the light extraction efficiency is lowered.
In addition, since the disappearance of the reflector when the nitride thin film is formed by a protective film wrapped around the reflector to reduce the total internal reflection, it is possible to provide a nitride semiconductor light emitting device capable of increasing light extraction efficiency and a method of manufacturing the same.
The effects of the present invention are not limited to the above-mentioned effects, and other effects not mentioned will be clearly understood by those skilled in the art from the description of the claims.
Advantages and features of the present invention, and methods for achieving them will be apparent with reference to the embodiments described below in detail in conjunction with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but may be implemented in various different forms, only the embodiments are to make the disclosure of the present invention complete, and common knowledge in the art to which the present invention pertains. It is provided to fully inform the person having the scope of the invention, which is defined only by the scope of the claims.
Hereinafter, a nitride semiconductor light emitting device and a method of manufacturing the same according to an exemplary embodiment of the present invention will be described in detail with reference to the accompanying drawings. For reference, in the following description of the present invention, if it is determined that a detailed description of a related known function or configuration may unnecessarily obscure the subject matter of the present invention, the detailed description thereof will be omitted.
Prior to the description, the nitride semiconductor light emitting device described below and the method of manufacturing the same are described in advance that the same names described in the other embodiments are denoted by the same reference numerals.
Hereinafter, a nitride semiconductor light emitting device and a method of manufacturing the same according to the present invention will be described in detail with reference to the accompanying drawings.
First, FIG. 1 is a perspective view of a nitride semiconductor light emitting device according to a preferred embodiment of the present invention.
As shown in FIG. 1, the nitride semiconductor
The
The nitride
In the nitride
Next, the
The
The
The
Next, FIG. 2 is a schematic configuration diagram of the reflector and the protective film of the first embodiment of the present invention, and FIG. 3 is a schematic configuration diagram of the reflector and the protective film of the second embodiment of the present invention.
The
As shown in FIG. 2, the
The
Herein, in the case of the first embodiment of the present invention, the
After forming the
4 is a manufacturing flowchart of the nitride semiconductor light emitting device according to the first embodiment of the present invention, Figure 5 is a manufacturing flowchart of the nitride semiconductor light emitting device according to the second embodiment of the present invention.
With this configuration, the method of manufacturing the nitride semiconductor
First, as shown in FIG. 4, in the method of manufacturing the nitride semiconductor
In addition, the
An n-GaN semiconductor layer, which is the
Meanwhile, in the method of manufacturing the nitride semiconductor
After stacking the
Subsequently, in the subsequent manufacturing process, as in a series of manufacturing processes of the first embodiment of the present invention, the
Accordingly, since the reflecting unit may be provided in the nitride semiconductor light emitting device to reduce total internal reflection during manufacturing, the light extraction efficiency may be prevented from being lowered.
In addition, the disappearance of the reflector when the nitride thin film is formed by the protective layer wrapped around the reflector to reduce the total internal reflection can increase the light extraction efficiency, thereby improving the reliability of the product.
Although the embodiments of the present invention have been described above with reference to the accompanying drawings, those skilled in the art to which the present invention pertains may implement the present invention in other specific forms without changing the technical spirit or essential features thereof. I can understand that. Therefore, it should be understood that the embodiments described above are exemplary in all respects and not restrictive. The scope of the present invention is shown by the following claims rather than the above description, and all changes or modifications derived from the meaning and scope of the claims and their equivalents should be construed as being included in the scope of the present invention. do.
1 is a perspective view of a nitride semiconductor light emitting device according to an embodiment of the present invention;
2 is a schematic configuration diagram of a reflector and a protective film according to the first embodiment of the present invention;
3 is a schematic configuration diagram of a reflector and a protective film according to a second embodiment of the present invention;
4 is a manufacturing flowchart of the nitride semiconductor light emitting device according to the first embodiment of the present invention;
5 is a manufacturing flowchart of a nitride semiconductor light emitting device according to the second embodiment of the present invention.
<Description of the symbols for the main parts of the drawings>
1: nitride semiconductor light emitting device 10: substrate
20: nitride thin film 40: cladding layer
42: first clad layer 42: second clad layer
50: active layer 60: electrode
62: first electrode 64: second electrode
80: reflecting unit 90: protective film
Claims (9)
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KR20090073856A KR101087901B1 (en) | 2009-08-11 | 2009-08-11 | Nitride semiconductor light emitting diode and manufacturing method thereof |
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KR20090073856A KR101087901B1 (en) | 2009-08-11 | 2009-08-11 | Nitride semiconductor light emitting diode and manufacturing method thereof |
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KR101087901B1 true KR101087901B1 (en) | 2011-11-30 |
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Citations (3)
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JP2005123619A (en) | 2003-10-13 | 2005-05-12 | Samsung Electro Mech Co Ltd | Nitride semiconductor formed on silicon substrate, and manufacturing method therefor |
JP2006128450A (en) * | 2004-10-29 | 2006-05-18 | Toyoda Gosei Co Ltd | Group iii nitride semiconductor light-emitting element |
JP2008526015A (en) | 2004-12-23 | 2008-07-17 | エルジー イノテック カンパニー リミテッド | Nitride semiconductor issuance element and manufacturing method thereof |
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Patent Citations (3)
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JP2005123619A (en) | 2003-10-13 | 2005-05-12 | Samsung Electro Mech Co Ltd | Nitride semiconductor formed on silicon substrate, and manufacturing method therefor |
JP2006128450A (en) * | 2004-10-29 | 2006-05-18 | Toyoda Gosei Co Ltd | Group iii nitride semiconductor light-emitting element |
JP2008526015A (en) | 2004-12-23 | 2008-07-17 | エルジー イノテック カンパニー リミテッド | Nitride semiconductor issuance element and manufacturing method thereof |
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