KR101087901B1 - Nitride semiconductor light emitting diode and manufacturing method thereof - Google Patents

Nitride semiconductor light emitting diode and manufacturing method thereof Download PDF

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KR101087901B1
KR101087901B1 KR20090073856A KR20090073856A KR101087901B1 KR 101087901 B1 KR101087901 B1 KR 101087901B1 KR 20090073856 A KR20090073856 A KR 20090073856A KR 20090073856 A KR20090073856 A KR 20090073856A KR 101087901 B1 KR101087901 B1 KR 101087901B1
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South Korea
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light emitting
thin film
substrate
nitride
reflector
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KR20090073856A
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Korean (ko)
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KR20110016247A (en
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김상묵
백종협
이승재
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한국광기술원
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Abstract

The present invention relates to a nitride semiconductor light emitting device capable of preventing the light extraction efficiency of the light emitting device due to total internal reflection from being lowered and a manufacturing method thereof. According to the present invention, the nitride semiconductor light emitting device includes a substrate, a nitride thin film formed on the substrate, a reflective portion formed between the substrate and the nitride thin film to prevent total reflection of light, and formed to cover the reflective portion, and reflected upon formation of the nitride thin film. It is characterized by including a protective film to prevent the disappearance of negative. As a result, the light-extraction efficiency can be increased by preventing the disappearance of the reflector when the nitride thin film is formed by the protective film wrapped around the reflector to reduce total internal reflection, thereby improving the reliability of the product.

Nitride, total reflection, light emitting element, cladding layer, protective film

Description

Nitride semiconductor light emitting device and its manufacturing method {NITRIDE SEMICONDUCTOR LIGHT EMITTING DIODE AND MANUFACTURING METHOD THEREOF}

The present invention relates to a nitride semiconductor light emitting device and a method of manufacturing the same, and more particularly, to form a protective film so as to prevent the disappearance of the reflective material and the nitride to prevent the light extraction efficiency of the light emitting device due to total internal reflection decreases A semiconductor light emitting device and a method of manufacturing the same.

In general, light emitting diodes (LEDs) are typically red, green, and blue light emitting diodes corresponding to three primary colors of light. Then, the light emitting diodes of various colors such as white are manufactured using the red, green, and blue light emitting diodes.

Among these red, green, and blue light emitting diodes, blue light emitting diodes have short wavelengths and high energy levels, and thus, various production methods have been proposed.

In the blue light emitting diode manufacturing method, a GaN (gallium nitride) thin film is generally formed on a substrate, and then an n-GaN semiconductor layer, an active layer for emitting light, and a p-GaN semiconductor layer are sequentially formed. Then, a mesa etching is performed to arrange an electrode for applying a current to the n-GaN semiconductor layer, and then electrodes are disposed on the n-GaN semiconductor layer and the p-GaN semiconductor layer, respectively.

Meanwhile, when the nitride semiconductor light emitting device is manufactured as described above, a problem occurs in that light extraction efficiency is lowered due to total internal reflection, and thus a reflective material that prevents total internal reflection is interposed between the substrate and the GaN thin film.

However, when the GaN thin film is formed on the substrate, the reflective material disappears due to the growth of the GaN thin film, and thus the light extraction efficiency is not overcome. Therefore, there is a demand for a manufacturing technology and method for preventing the disappearance of the reflective material when forming a GaN thin film.

Accordingly, an object of the present invention is to provide a nitride semiconductor light emitting device capable of forming a reflective material and preventing the light extraction efficiency from being lowered by total internal reflection, and a method of manufacturing the same.

In addition, another object of the present invention is to provide a nitride semiconductor light emitting device and a method of manufacturing the improved structure and manufacturing method to prevent the disappearance of the reflective material during the growth of the GaN thin film.

The objects of the present invention are not limited to the above-mentioned objects, and other objects that are not mentioned will be clearly understood by those skilled in the art from the following description.

According to the present invention, there is provided a solution for solving the above problems, wherein a nitride semiconductor light emitting device includes a substrate, a nitride thin film formed on the substrate, and a reflection formed between the substrate and the nitride thin film to prevent total reflection of light. And a protective film which is formed to cover the reflecting part and prevents the disappearance of the reflecting part when the nitride thin film is formed.

Here, the substrate may include any one of silicon (Si), silicon carbide (SiC), and sapphire (Al 2 O 3 ).

The reflector may include any one of platinum (Pt), palladium (Pd), silver (Ag), and aluminum (Al).

The protective layer may include any one of silicon oxide (SiO 2 ) and silicon nitride (Si 3 N 4 ).

The protective film is preferably coated on the outer surface of the reflecting portion patterned on the substrate.

The protective film is coated on the reflecting portion composed of particles, and is preferably laminated on the substrate together with the reflecting portion.

On the other hand, according to the present invention, in the method for manufacturing a nitride semiconductor light emitting device according to the present invention, (a) forming a reflective portion on the substrate, (b) a protective film to surround the outer surface of the reflective portion And (c) growing a nitride thin film on the passivation layer.

Here, in the step (b), it is preferable that the protective film coats the surface of the reflecting portion patterned on the substrate.

On the other hand, according to the present invention, in the method for manufacturing a nitride semiconductor light emitting device, (a) preparing a reflector consisting of particles, (b) coating the reflector with a protective film, (c) stacking the reflector coated with the protective film on a substrate, and (d) growing a nitride thin film on the reflector. .

Specific details of other embodiments are shown and shown in the detailed description and drawings.

Therefore, according to the solution of the above problem, the nitride semiconductor light emitting device is provided with a reflector that can reduce the total internal reflection during manufacturing, it is possible to prevent the light extraction efficiency is lowered.

In addition, since the disappearance of the reflector when the nitride thin film is formed by a protective film wrapped around the reflector to reduce the total internal reflection, it is possible to provide a nitride semiconductor light emitting device capable of increasing light extraction efficiency and a method of manufacturing the same.

The effects of the present invention are not limited to the above-mentioned effects, and other effects not mentioned will be clearly understood by those skilled in the art from the description of the claims.

Advantages and features of the present invention, and methods for achieving them will be apparent with reference to the embodiments described below in detail in conjunction with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but may be implemented in various different forms, only the embodiments are to make the disclosure of the present invention complete, and common knowledge in the art to which the present invention pertains. It is provided to fully inform the person having the scope of the invention, which is defined only by the scope of the claims.

Hereinafter, a nitride semiconductor light emitting device and a method of manufacturing the same according to an exemplary embodiment of the present invention will be described in detail with reference to the accompanying drawings. For reference, in the following description of the present invention, if it is determined that a detailed description of a related known function or configuration may unnecessarily obscure the subject matter of the present invention, the detailed description thereof will be omitted.

Prior to the description, the nitride semiconductor light emitting device described below and the method of manufacturing the same are described in advance that the same names described in the other embodiments are denoted by the same reference numerals.

Hereinafter, a nitride semiconductor light emitting device and a method of manufacturing the same according to the present invention will be described in detail with reference to the accompanying drawings.

First, FIG. 1 is a perspective view of a nitride semiconductor light emitting device according to a preferred embodiment of the present invention.

As shown in FIG. 1, the nitride semiconductor light emitting device 1 according to an exemplary embodiment of the present invention may include a substrate 10, a nitride (GaN: gallium nitride) thin film 20, a cladding layer 40, and an active layer ( 50, an electrode 60, a reflector 80, and a protective film 90 (see FIGS. 2 and 3).

The substrate 10 is made of one of silicon (Si), silicon carbide (SiC), and sapphire (Al 2 O 3 ) as an embodiment of the present invention. In a preferred embodiment of the present invention, a silicon carbide or sapphire substrate is used.

The nitride thin film 20 is provided such that the lattice constant mismatch between the cladding layer 40 and the substrate 10 stacked on the substrate 10 and the coefficient of thermal expansion are low. That is, when the nitride thin film 20 is epitaxially grown in which the cladding layer 40 is grown as a single crystal thin film layer on the substrate 10, defects due to mismatch between the substrate 10 and the cladding layer are prevented. It acts as a buffer layer. Of course, the nitride thin film 20 is also epitaxially grown on the substrate 10. In this case, the epitaxial growth of the nitride thin film 20 will be described in detail with reference to the reflector 80 and the protective film 90 which will be described later.

In the nitride thin film 20 of the present invention, GaN (gallium nitride) is used. However, the nitride thin film 20 may be AlGaN (aluminum gallium nitride) or AlN (aluminum nitride).

Next, the cladding layer 40 is grown on the nitride thin film 20 after the nitride thin film 20 is grown on the substrate 10. The cladding layer 40 includes a first cladding layer 42 and a second cladding layer 44.

The first cladding layer 42 is an n-GaN nitride semiconductor grown on the nitride thin film 20, and the second cladding layer 44 is a p-GaN nitride semiconductor. The first cladding layer 42 and the second cladding layer 44 emit electrons and holes, respectively.

The active layer 50 is a quantum well structure of InGaN (Indium Gallium Nitride) or GaN and is designed to maximize internal quantum efficiency. The active layer 50 emits light by combining electrons from the first cladding layer 42 and holes from the second cladding layer 44.

The electrode 60 includes a first electrode 62 disposed on the first cladding layer 42 and a second electrode 64 disposed on the second cladding layer 44. The electrode 60 serves to apply current from an external power source to the first cladding layer 42 and the second cladding layer 44, respectively. Here, the first electrode 62 is stacked on the first clad layer 42 exposed by mesa etching.

Next, FIG. 2 is a schematic configuration diagram of the reflector and the protective film of the first embodiment of the present invention, and FIG. 3 is a schematic configuration diagram of the reflector and the protective film of the second embodiment of the present invention.

The reflector 80 is formed between the substrate 10 and the nitride thin film 20. The reflector 80 reduces the total internal reflection of light emitted from the active layer 50 to prevent the light extraction efficiency from being lowered. As the reflector 80 of the present invention, any one of platinum (Pt), palladium (Pd), silver (Ag), and aluminum (Al) is used.

As shown in FIG. 2, the reflector 80 is patterned and formed on the substrate 10 as a first embodiment of the present invention. On the other hand, as shown in Figure 3, the reflector 80 is provided in the form of particles (particle) as a second embodiment of the present invention (10) by spin casting (drop casting) or drop (drop) method Stacked on.

The passivation layer 90 covers the reflector 80 to prevent the disappearance of the reflector 80 when the nitride thin film 20 is formed. That is, when the nitride thin film 20 is epitaxially grown, the protective film 90 is coated on the outer surface of the reflecting portion 80 to prevent the reflecting portion 80 from disappearing due to the growth of the nitride thin film 20. In one embodiment of the present invention, the passivation layer 90 may be formed of any one of silicon oxide (SiO 2 ) and silicon nitride (Si 3 N 4 ).

Herein, in the case of the first embodiment of the present invention, the passivation layer 90 is coated on the reflector 80 patterned on the substrate 10. On the other hand, in the second embodiment of the present invention, the protective film 90 is coated on the reflector 80 in the form of particles, and then laminated on the substrate 10 together with the reflector 80.

After forming the reflector 80 and the passivation layer 90 of the first and second embodiments of the present invention, the nitride thin film 20 is formed between the reflector 80 as shown in FIGS. 2 and 3. First grow vertically and then grow horizontally.

4 is a manufacturing flowchart of the nitride semiconductor light emitting device according to the first embodiment of the present invention, Figure 5 is a manufacturing flowchart of the nitride semiconductor light emitting device according to the second embodiment of the present invention.

With this configuration, the method of manufacturing the nitride semiconductor light emitting device 1 according to the first and second embodiments of the present invention will be described below.

First, as shown in FIG. 4, in the method of manufacturing the nitride semiconductor light emitting device 1 according to the first exemplary embodiment of the present invention, the reflector 80 is patterned on the substrate 10 (S10). Here, the patterning of the reflecting portion 80 may use a known method such as a photoresist.

In addition, the protective film 90 is coated on the reflective part 80 patterned on the substrate 10 (S30). After coating the protective film 90 on the reflector 80, the nitride thin film 20 is formed through vertical and horizontal epitaxial growth (S50).

An n-GaN semiconductor layer, which is the first cladding layer 42, is formed on the nitride thin film 20 (S70). An active layer 50 is formed on the first cladding layer 42 to emit light (S90). A p-GaN semiconductor layer, which is the second cladding layer 44, is formed on the active layer 50 (S110). After exposing the first cladding layer 42 using mesa etching, the negative electrode, which is the first electrode 62, is disposed, and the second electrode 64, which is the second electrode 64, is disposed on the second cladding layer 44. (S130).

Meanwhile, in the method of manufacturing the nitride semiconductor light emitting device 1 according to the second embodiment of the present invention, the reflective portion 80 having a particle shape is coated with the protective film 90 (S300). The reflective portion 80 coated with the protective film 90 is laminated on the substrate using spin casting or a drop method (S320).

After stacking the reflector 80 coated with the protective film 90 on the substrate 10, the nitride thin film 20 is formed by epitaxial growth as in the first embodiment of the present invention (S340).

Subsequently, in the subsequent manufacturing process, as in a series of manufacturing processes of the first embodiment of the present invention, the first cladding layer 42 is formed (S360), and the active layer 50 is formed (S380). After forming the active layer 50, the second clad layer 44 is formed (S400). Finally, the first electrode 62 is disposed on the first cladding layer 42 after mesa etching so that a current can be applied to the first cladding layer 42 and the second cladding layer 44, and the second cladding layer 44. The second electrode 64 is disposed on the S (S420).

Accordingly, since the reflecting unit may be provided in the nitride semiconductor light emitting device to reduce total internal reflection during manufacturing, the light extraction efficiency may be prevented from being lowered.

In addition, the disappearance of the reflector when the nitride thin film is formed by the protective layer wrapped around the reflector to reduce the total internal reflection can increase the light extraction efficiency, thereby improving the reliability of the product.

Although the embodiments of the present invention have been described above with reference to the accompanying drawings, those skilled in the art to which the present invention pertains may implement the present invention in other specific forms without changing the technical spirit or essential features thereof. I can understand that. Therefore, it should be understood that the embodiments described above are exemplary in all respects and not restrictive. The scope of the present invention is shown by the following claims rather than the above description, and all changes or modifications derived from the meaning and scope of the claims and their equivalents should be construed as being included in the scope of the present invention. do.

1 is a perspective view of a nitride semiconductor light emitting device according to an embodiment of the present invention;

2 is a schematic configuration diagram of a reflector and a protective film according to the first embodiment of the present invention;

3 is a schematic configuration diagram of a reflector and a protective film according to a second embodiment of the present invention;

4 is a manufacturing flowchart of the nitride semiconductor light emitting device according to the first embodiment of the present invention;

5 is a manufacturing flowchart of a nitride semiconductor light emitting device according to the second embodiment of the present invention.

<Description of the symbols for the main parts of the drawings>

 1: nitride semiconductor light emitting device 10: substrate

20: nitride thin film 40: cladding layer

42: first clad layer 42: second clad layer

50: active layer 60: electrode

62: first electrode 64: second electrode

80: reflecting unit 90: protective film

Claims (9)

delete delete delete delete delete In a nitride semiconductor light emitting device, Board; A reflection part formed on a portion of the substrate and preventing total reflection of light; A nitride thin film growing from a surface of the substrate on which the reflective portion is not formed; It is formed to cover the reflector, and includes a protective film to prevent the disappearance of the reflector when the nitride thin film, The protective film is coated on the reflecting portion made of particles, the nitride semiconductor light emitting device, characterized in that laminated on the substrate with the reflecting portion. delete delete In the method of manufacturing a nitride semiconductor light emitting device, (a) preparing a reflector composed of particles; (b) coating the reflector with a protective film; (c) stacking the reflective portion coated with the protective film on a portion of the substrate, and (d) growing a nitride thin film from the surface of the substrate on which the reflective portion coated with the protective film is not laminated; The nitride thin film is a method of manufacturing a nitride semiconductor light emitting device, characterized in that for growing to cover the reflective portion coated with the protective film.
KR20090073856A 2009-08-11 2009-08-11 Nitride semiconductor light emitting diode and manufacturing method thereof KR101087901B1 (en)

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005123619A (en) 2003-10-13 2005-05-12 Samsung Electro Mech Co Ltd Nitride semiconductor formed on silicon substrate, and manufacturing method therefor
JP2006128450A (en) * 2004-10-29 2006-05-18 Toyoda Gosei Co Ltd Group iii nitride semiconductor light-emitting element
JP2008526015A (en) 2004-12-23 2008-07-17 エルジー イノテック カンパニー リミテッド Nitride semiconductor issuance element and manufacturing method thereof

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005123619A (en) 2003-10-13 2005-05-12 Samsung Electro Mech Co Ltd Nitride semiconductor formed on silicon substrate, and manufacturing method therefor
JP2006128450A (en) * 2004-10-29 2006-05-18 Toyoda Gosei Co Ltd Group iii nitride semiconductor light-emitting element
JP2008526015A (en) 2004-12-23 2008-07-17 エルジー イノテック カンパニー リミテッド Nitride semiconductor issuance element and manufacturing method thereof

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