KR101066934B1 - 도파관 전압 조절 발진기 - Google Patents
도파관 전압 조절 발진기 Download PDFInfo
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- KR101066934B1 KR101066934B1 KR1020100098362A KR20100098362A KR101066934B1 KR 101066934 B1 KR101066934 B1 KR 101066934B1 KR 1020100098362 A KR1020100098362 A KR 1020100098362A KR 20100098362 A KR20100098362 A KR 20100098362A KR 101066934 B1 KR101066934 B1 KR 101066934B1
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- diode
- jig
- waveguide
- gun
- bias
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- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims abstract description 19
- 238000003780 insertion Methods 0.000 claims abstract description 14
- 230000037431 insertion Effects 0.000 claims abstract description 14
- 230000010355 oscillation Effects 0.000 claims abstract description 12
- 238000000926 separation method Methods 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 3
- 230000008878 coupling Effects 0.000 abstract 1
- 238000010168 coupling process Methods 0.000 abstract 1
- 238000005859 coupling reaction Methods 0.000 abstract 1
- 230000001105 regulatory effect Effects 0.000 description 7
- 238000004891 communication Methods 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B9/00—Generation of oscillations using transit-time effects
- H03B9/12—Generation of oscillations using transit-time effects using solid state devices, e.g. Gunn-effect devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P7/00—Resonators of the waveguide type
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B9/00—Generation of oscillations using transit-time effects
- H03B9/12—Generation of oscillations using transit-time effects using solid state devices, e.g. Gunn-effect devices
- H03B9/14—Generation of oscillations using transit-time effects using solid state devices, e.g. Gunn-effect devices and elements comprising distributed inductance and capacitance
- H03B9/141—Generation of oscillations using transit-time effects using solid state devices, e.g. Gunn-effect devices and elements comprising distributed inductance and capacitance and comprising a voltage sensitive element, e.g. varactor
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B9/00—Generation of oscillations using transit-time effects
- H03B9/12—Generation of oscillations using transit-time effects using solid state devices, e.g. Gunn-effect devices
- H03B2009/123—Generation of oscillations using transit-time effects using solid state devices, e.g. Gunn-effect devices using Gunn diodes
Landscapes
- Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
Abstract
Description
도 2는 도 1에 도시된 A를 확대하여 도시한 도면이다.
120: 제2 지그 125: 도파로
140: 건 다이오드 150: 바렉터 다이오드
155: 다이오드 받침대 170: 제1 바이어스 포스트
175: 제2 바이어스 포스트 180: 공진기
210: 홈
Claims (5)
- 발진 신호를 생성하는 건 다이오드;
상기 건 다이오드로부터 이격되어 배치되고 상기 발진 신호의 주파수를 변환하는 바렉터 다이오드;
상기 건 다이오드 및 상기 바렉터 다이오드 각각과 결합하여 전원을 공급하는 복수의 바이어스 포스트;
상기 바이어스 포스트들이 삽입되는 복수의 삽입홀을 구비하는 제1 지그;
상기 제1 지그와 결합하여 도파관을 형성하고, 상기 도파관을 형성하는 일면에 상기 건 다이오드가 결합하는 제2 지그; 및
상기 제2 지그의 일면에 접촉하여 상기 바이어스 포스트에 결합된 상기 바렉터 다이오드를 지지하며, 상기 제2 지그의 일면을 따라 상기 바렉터 다이오드의 위치를 이동시키는 다이오드 받침대를 포함하되,
상기 제2 지그는 상기 바렉터 다이오드에 연결된 상기 바이어스 포스트와 중첩하는 상기 일면에 구비된 홈을 더 포함하고,
상기 다이오드 받침대는 상기 바렉터 다이오드를 지지하여 상기 건 다이오드에 대한 상기 바렉터 다이오드의 이격 거리를 조절하는 받침부 및 상기 홈에 삽입되어 상기 받침부를 지지하는 지지부를 포함하는 도파관 전압 조절 발진기.
- 삭제
- 삭제
- 제1 항에 있어서,
상기 홈은 상기 바이어스 포스트의 직경에 상응하는 폭을 갖는 것을 특징으로 하는 도파관 전압 조절 발진기.
- 제1 항에 있어서,
상기 건 다이오드와 결합하는 상기 바이어스 포스트에 설치되어 상기 건다이오드와 상기 바렉터 다이오드를 동조시키는 공진기를 더 포함하는 것을 특징으로 하는 특징으로 하는 도파관 전압 조절 발진기.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020100098362A KR101066934B1 (ko) | 2010-10-08 | 2010-10-08 | 도파관 전압 조절 발진기 |
Applications Claiming Priority (1)
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KR1020100098362A KR101066934B1 (ko) | 2010-10-08 | 2010-10-08 | 도파관 전압 조절 발진기 |
Publications (1)
Publication Number | Publication Date |
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KR101066934B1 true KR101066934B1 (ko) | 2011-09-23 |
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KR1020100098362A Active KR101066934B1 (ko) | 2010-10-08 | 2010-10-08 | 도파관 전압 조절 발진기 |
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06204405A (ja) * | 1992-12-26 | 1994-07-22 | Nissan Motor Co Ltd | 高周波発振器 |
KR100443440B1 (ko) * | 1996-06-29 | 2004-10-08 | 로베르트 보쉬 게엠베하 | 마이크로파발진기 |
US20050126696A1 (en) * | 2003-12-11 | 2005-06-16 | Kook-Jin Oh | Snap cure device for semiconductor chip attachment |
KR100601594B1 (ko) | 2005-04-29 | 2006-07-24 | 우리테크 주식회사 | 고주파 스위칭 다이오드를 이용한 광대역 전압 제어 발진기 |
-
2010
- 2010-10-08 KR KR1020100098362A patent/KR101066934B1/ko active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06204405A (ja) * | 1992-12-26 | 1994-07-22 | Nissan Motor Co Ltd | 高周波発振器 |
KR100443440B1 (ko) * | 1996-06-29 | 2004-10-08 | 로베르트 보쉬 게엠베하 | 마이크로파발진기 |
US20050126696A1 (en) * | 2003-12-11 | 2005-06-16 | Kook-Jin Oh | Snap cure device for semiconductor chip attachment |
KR100601594B1 (ko) | 2005-04-29 | 2006-07-24 | 우리테크 주식회사 | 고주파 스위칭 다이오드를 이용한 광대역 전압 제어 발진기 |
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