KR101061254B1 - Semiconductor device and manufacturing method thereof - Google Patents

Abstract

The present invention relates to an infrared sensing element of a micro-bolometer type. The infrared sensing element according to the present invention is formed of a storage heat canceller and a beam structure spaced apart from the storage heat canceller and at least one end thereof is supported thereon and elastically deformed to contact the storage heat canceller. And a sensing structure for erasing accumulated heat. The sensing structure is formed integrally with the sensing unit to surround a secondary property, for example, an electrical resistance characteristic by heat, and the sensing unit to surround the sensing unit when viewed in cross section, and absorbs light to convert energy of incident photons into heat. Contains wealth. The sensing structure of the beam structure elastically deforms and contacts the accumulated heat collection unit spaced below, thereby eliminating the accumulated heat.

According to another aspect of the present invention, a structure that is curved forward in the form of '또는' or '때' in plan view in the vicinity of the support structure of the sensing structure, the overall width is narrow and curved shape (surpentine) It is formed into a structure.

Description

Semiconductor device and method for manufacturing the same

The present invention relates to a semiconductor device, and more particularly to an infrared sensing device of the micro-bolometer type.

Micro-bolometer-type infrared sensing element is a device for detecting the infrared ray by detecting a change in the secondary attribute (secondary attribute) due to heat generated when the infrared ray is irradiated. Among the secondary properties that are detected are those using TCR (Temperature Coefficent of resistance). In the resistive sensing element, the resistive sensing unit includes vanadium oxide (VOx), poly-silicon, amorphous silicon, and thermistor (MnNiCO) ₃ O. ₄ ), diodes and the like were used. These have the advantage that the resistance change rate with the temperature change is large, but the flicker noise (Flicker Noise, 1 / f Noise) due to the inherent characteristics of the material is excessive, there is a problem that the performance is significantly reduced, especially at low frequencies.

Infrared sensing devices need to be as thermally isolated as possible from the surrounding environment to improve sensitivity, which results in delays in image acquisition. In order to solve this problem, there is a conventional chopper (Chopper) to reset the sensing unit by periodically blocking the heat in the infrared sensing element. However, such a mechanical chopper has a problem of limiting the operation of the infrared sensing element, complicating the configuration, and increasing manufacturing cost due to a complicated manufacturing process.

In order to solve this problem, the applicant uses a crystalline silicon thin film formed by a silicon on insulator (SOI) substrate manufacturing method as a sensing unit, and a sensing structure having a spentine shape is provided on a spaced spaced substrate. A semiconductor device for contacting and eliminating accumulated heat has been proposed and registered in Korean Patent No. 704,378.

Although the device is superior in terms of improved sensitivity and simple structure compared to the prior art, there are problems due to the limitations of the mechanical properties of the Spentine structure and irregular deformation due to the stress difference between different layers. In addition, there is a limit in optimizing performance due to the correlation between mechanical and thermal characteristics.

An object of the present invention is to further improve the infrared sensing performance and image delay characteristics compared to the conventional device.

Furthermore, an object of the present invention is to propose a structure for optimizing the mechanical and thermal characteristics of a spontaneous structure in a microbolometer-type infrared sensing element.

According to an aspect of the present invention, there is provided a semiconductor device in which a sensing structure of a beam structure is elastically deformed to contact an accumulation heat canceling unit spaced below and erases heat accumulated therein. In the sensing structure, the light absorbing unit is integrally formed on at least the upper and lower parts of the sensing unit when viewed from the cross section.

The sensing unit is a structure showing a change in secondary attribute due to heat absorption of the light absorbing unit, and may be, for example, a material showing a change in TCR or a change in ferroelectric.

According to another aspect of the present invention, the light absorbing portion is formed on the left and right as well as the upper and lower portions of the sensing portion to form the surrounding sensing portion.

According to another aspect of the invention, it includes a structure to bend forward in the form of '또는' or '⊃' in plan view near the end where the sensing structure is supported. Such curved structures increase stiffness without increasing the size of the entire structure. As the overall structure increases in size, heat dissipation undesirably increases.

According to another aspect of the invention, the light absorbing portion is formed of silicon nitride (Silicon Nitride (Si ₃ N ₄ )), the sensing portion is formed of a crystalline silicon thin film.

According to an aspect of the present invention, after stacking a sensing layer on a handle wafer, and patterning it to form a cavity, to form a sensing unit pattern of the beam structure on the cavity, a light receiving layer on the sensing unit pattern There is provided a method of manufacturing a semiconductor device in which an additional light-receiving layer is stacked on the opposite sensing part pattern after stacking, inverting a wafer to remove a handle wafer.

According to another aspect of the invention, this cavity is filled with a packed bed during the process and removed at the end of the process.

According to another aspect of the present invention, an accumulation heat scavenger layer is further stacked on the packed layer. The upper portion of the packed layer is polished in advance so as to smooth the lower portion of the accumulated heat elimination layer to increase the heat elimination efficiency.

The present invention can improve the absorption of infrared energy compared to the case where the light absorbing portion is formed on the upper, lower or circumference of the sensing portion, to simply increase the thickness of the light absorbing portion, it is possible to prevent undesirable bending in the sensing structure In addition, the durability of the sensor can be improved.

In addition, the sensing structure is formed of a crystalline silicon thin film and the light absorbing portion surrounding the sensing structure is formed of silicon nitride (Si ₃ N ₄ ), thereby overcoming the interdependency of the thermal and mechanical properties of the sensing structure. Since these can be adjusted independently, it is possible to improve the sensitivity and the operation speed simultaneously.

Furthermore, since the present invention resets the accumulated heat by the elastic deformation structure based on the MEMS technology, the response speed is eliminated by eliminating the image delay, which is advantageous for high speed photography.

Furthermore, since the present invention has a reset structure for dissipating heat accumulated in the substrate under the sensing structure, the present invention has an advantage of providing a reset structure without sacrificing the area of the light receiving area. Moreover, such elastic deformation is driven by electrostatic deformation when the potential difference is applied, and such a driving circuit can be formed by a CMOS process, so that the entire device can be manufactured only by the CMOS process. Furthermore, the present invention has the advantage that CMOS circuits are formed under the sensor structure, so as not to sacrifice the area of the light receiving region.

In addition, the method of manufacturing a semiconductor device according to the present invention forms a cavity in the sensing layer, and processes the same to form a bent beam-shaped sensing unit, so that the sensing unit can be thinned to increase the resistance value, and the mechanical strength is low. Ease mechanical deformation and improve responsiveness when eliminating accumulated heat. The thin cross section of the sensing part also helps to improve sensitivity by preventing parasitic heat leakage from the sensor through the support beam structure.

The semiconductor device manufacturing method according to the present invention also ensures that no mechanical stress remains in the resulting sensor pattern since the sensing pattern in the cavity is fixed by the filling layer during the process. This makes the characteristics of the sensor uniform and improves responsiveness.

The foregoing and further aspects of the present invention will become more apparent through the following embodiments. Hereinafter, such aspects of the present invention will be described in detail with reference to preferred embodiments described with reference to the accompanying drawings.

1 is a plan view illustrating a schematic structure of one pixel portion of a semiconductor device according to an exemplary embodiment of the present invention, and FIG. 2 is a cross-sectional view thereof. 1 and 2, a semiconductor device according to an exemplary embodiment of the present invention includes a storage heat canceling unit 3 and a beam spaced apart from the storage heat canceling unit 3 and supported at both ends thereof. It includes a sensing structure (1) formed of a) structure.

In the illustrated embodiment, both ends of the sensing structure 1 are supported by the accumulation heat canceling unit 3, but this is not essential, and only one end of the left and right sides may be supported. For example, it may be a spiral shape in which one side is supported. At this time, the sensing unit is doubled along the spiral, and meets at the end of the spiral to form a circuit.

The sensing structure 1 includes the sensing units 11 and 15 in which the electrical resistance characteristic changes by heat, and the light absorbing units 11 and 15 that are integrally formed with the sensing unit 13 and convert energy of incident photons into heat. Include. However, the present invention is not limited thereto, and the sensing units 11 and 15 may change secondary attributes such as physical and chemical properties by heat, and any material capable of measuring the degree of change of the attributes may be used. Can be.

In the cross-sectional view of FIG. 1, the light absorbing units 11 and 15 enclose the beam sensing unit 13. However, the present invention is not limited thereto, and the light absorbing units 11 and 15 may be formed only on the upper and lower portions of the sensing unit 13.

According to this aspect of the present invention, although the light absorbing portions 11 and 15 and the sensing portion 13 made of materials having different thermal expansion coefficients are integrally formed, the light absorbing portions 11 and 15 are centered on the sensing portion 13. Since it is formed in a symmetrical shape, the stress due to thermal expansion is canceled out to prevent undesired curvature. As will be described later, each step of the manufacturing process is also carefully balanced so that no accumulated deformation due to the stress of the light absorbing portion occurs.

In addition, the additional thickness obtained by configuring the light absorbing portions 11 and 15 in two layers improves absorption of IR energy. Increasing the thickness to two layers is better than doubling the thickness of a single layer because the vertical thermal time constant is reduced, resulting in faster heat transfer in the vertical direction.

Since the light absorbing part has a sensing structure that is completely passivated by completely surrounding the sensing part, the life of the sensor is longer. In addition, a suitable material may be added to the light absorbing portion, or an additional light absorbing layer may be coated to tune the characteristic of the sensitive wavelength band. Such tuning, for example, allows the device according to the invention to be used for X-ray detection.

As illustrated in FIG. 3, the sensing structure 1 is elastically deformed to contact the accumulation heat canceling unit 3, thereby eliminating heat accumulated in the light absorbing units 11 and 15. According to one aspect of the invention, the supported end of the sensing structure includes a structure (91, 95) to bend forward in a '⊂' or '⊃' shape in plan view. This structure restricts the strain for accumulating heat elimination to concentrate on the bend, which greatly increases the mechanical strength (by constraining angular component of the deflection).

In the illustrated embodiment, the sensing structure is formed as a spentine structure 91, 95 that is narrow and curved overall. In the illustrated embodiment, the central portion 93 of the sensing structure is of a lattice shape. This also has a narrow width, which is advantageous in that the cross-sectional area of the sensing unit is small and curved to increase the resistance value.

In the illustrated embodiment, the sensing unit 13 is formed of a crystalline silicon thin film (SOI: Silicon On Insulator), and the light absorbing units 11 and 15 surrounding the sensing unit 13 are formed of nitride (Silicon Nitride (Si ₃ N ₄ )). . Due to the structure in which the light absorbing units 11 and 15 surround the sensing unit 13, the mechanical and thermal characteristics of the sensor can be optimized. That is, the mechanical stiffness of the beam structure is required to be somewhat strong, and the thermal conductivity thereof is preferably low. However, conventionally, in order to increase the mechanical strength, the thickness of the beam should be thick, but in order to lower the thermal conductivity, there was a contradiction that the thickness of the beam should be thin.

In a preferred embodiment, the mechanical strength of the sensing structure depends on the light absorbing portions _{11 and 15} of nitride (Silicon Nitride (Si ₃ N ₄ )), and the thermal characteristics of the sensing portion 13 of the crystalline silicon thin film. Depends on On the other hand, the electrical characteristics can be controlled by controlling the implant (implant) applied to the sensing unit (13). The implants are injected into the structural parts 91, 93 and 95 of the sensing unit independently to tune the electrical characteristics. Therefore, due to the structure surrounding the light absorbing portions 11 and 15 around the sensing unit 13, mechanical strength is achieved, and the thickness of the sensing unit 13 is reduced to improve thermal characteristics, and the sensing unit 13 is provided. By controlling the implant to be applied to optimize the electrical properties it can provide an overall optimized sensor.

In the illustrated embodiment, the heat accumulating portion 3 in contact with the sensing structure in FIG. 3 in deformation in the space 7 of FIG. 2 to effectively dissipate heat accumulated in the light absorbing portions 11 and 15. The flatness of the top of the is ensured with sufficient precision. This helps the amount of heat dissipation generated through contact with the accumulated heat canceling unit 3 to be much larger than the heat dissipation through the structure supporting the sensing structure when the sensing structure is deformed.

In the illustrated embodiment, the accumulation heat canceling unit is a handle wafer, but the present invention is not limited thereto, and any structure having a relatively large area and good heat transfer characteristics, including a multi-layered multilayer structure, may be used.

Reference numeral 5 is an electrode for supplying or drawing an electrical signal to the sensing unit 13. Although not shown, a heat dischage driving part is provided to reset the accumulated heat by elastically deforming the sensing structure by applying a potential difference between the sensing unit 13 and the accumulated heat eliminating unit 3. That is, the sensing structure 1 is in contact with the accumulation heat eliminating portion 3, which is a handle wafer, through electrostatic actuation to radiate heat in the vertical direction.

Here, it is necessary to pay attention to the asymmetry (disparity) of heat leakage in the two states, that is, the heat dissipation state and the measurement state. In the non-reset measurement state, the heat must flow in the horizontal direction along the long spanned structure, so that the sensing unit 93 is effectively isolated from the thermal leak which may impair the sensitivity characteristics. However, when the sensor is driven to contact the accumulation heat canceling unit 3, heat flows in the vertical direction, which is a thin thickness direction in the structure. This property makes it easy to obtain at least five times the difference in magnitude of thermal conductivity between the two states.

In the illustrated embodiment, the resistance value of the detector 13 is detected by the current flowing across the detector. The sensed sensing current is stored in the pixel capacitor and is read out through a circuit similar to the general readout circuit of the CMOS image sensor (CIS).

These drive and sensing circuits are integrated with the sensing structures in the device as CMOS circuits. These CMOS circuits may be integrated on the side of the sensing structure 1 or on the opposite side of the handle wafer, which is the accumulation heat eraser 3. When integrated under the sensing structure 1 of the handle wafer, there is an advantage of not having to sacrifice the light receiving area.

4A to 4J are diagrams illustrating a method of manufacturing a semiconductor device in accordance with an embodiment of the present invention. According to the present invention, a method of manufacturing a semiconductor device includes stacking a sensing layer whose resistance value is changed by heat on a handle wafer, patterning the sensing layer to form a cavity, and sensing the beam structure of the cavity. Forming a pattern, laminating a light receiving layer for converting energy of photons incident along the detector pattern into heat, and inverting the wafer to remove the first handle wafer to expose the opposite side of the detector pattern; and a6) stacking the light receiving layer on the opposite side of the light receiving layer previously stacked in the sensing unit pattern to form a sensing structure having a beam structure.

Referring to FIG. 4A, an oxide layer 102 is first stacked on a handle wafer 101, an Si sensing layer 103, which is a crystalline silicon thin film, is sequentially stacked on the handle wafer 101.

In the present exemplary embodiment, the sensing layer 103 whose resistance is changed by heat is formed of crystalline silicon manufactured using a silicon on insulator (SOI) substrate manufacturing process. Various methods of manufacturing a SOI substrate are known.

The crystalline silicon has a temperature coefficient of resistance (TCR) of 0.2% / ° K, which is a change rate of resistance according to temperature change. This value is 2 ~ 3% / ° K of Vanadium Oxide (VOx), Poly-Silicon, Amorphous-Silicon, Distorter (MnNiCO) 3O4, Diode, etc. Small for value However, the noise generated in the case of crystalline silicon can be much smaller than in polysilicon, amorphous silicon and the like. This is because Johnson noise (or thermal noise) of Equation 1 is the main noise in the case of crystalline silicon, but flicker noise (or 1 / f noise) is the main noise in the case of polysilicon and amorphous silicon.

Where Vn is Johnson noise, K is Boltzmann's constant, B is frequency band, and R is resistance

In addition, when the material of the sensing layer 103 is made of crystalline silicon, the electrical resistance increases, thereby improving the signal noise ratio (SNR), thereby greatly improving the sensor performance. The reason for the large resistance is first, because the current flowing through the sensing section must be reduced. This is to reduce self-heating caused by bias current.

Second, to improve the SNR as shown in Equation 2 below.

Where SNR is the Signal Noise Ratio, i is the current, TCR is the Temperature coefficient of Resistance, ΔT is the change in temperature, R is the sensor resistance, K is the Boltzmann constant, T is the temperature, and B is the frequency band.

Thereafter, as shown in FIG. 4B, the oxide film 104 and a part of the sensing layer 103, which is crystalline silicon, are etched by reactive ion etching (RIE) to form a cavity 150. The cavity 150 not only provides space for filling polysilicon, but also reduces the thickness of the crystalline silicon layer, which is a sensing part in the sensor region. In the transistor process, thick silicon is required, but the sensing unit 103 needs to be made thin because it must be flexibly mechanically bent. This facilitates mechanical deformation during heat scavenging in the finished sensing structure, thereby improving the responsiveness of the sensor.

The electrical resistance value is then adjusted through ion implantation and annealing on the sensing layer 103 exposed by etching. This adjusts the electrical characteristics of the sensor.

Next, as illustrated in FIG. 4C, the silicon 103 and the sacrificial oxide film are RIE-processed to form a detector pattern of a beam structure. In the present specification, the expression 'beam structure' means that the sensing structure is a structure in which beams are woven or beams are connected to reduce the cross-sectional area of the sensing unit. It may be an array of lattice-shaped beams, may be a sppentine structure, may be an S-shape or a spring. For good mechanical properties it is preferred to include a form that is curved and advanced in the form of '⊂' or '⊃' in plan view near the end where the sensing structure is supported. Here, the form of advancing means not the circular form in which the curves continue and return to the place, but the form of the road moving forward by repeating the curve from side to side. This allows the deformation to concentrate on the bend, improving the mechanical elasticity. By making the width of the beam of the bent portion wider than the other portions, the mechanical characteristics can be further improved.

Afterwards, an SiO 2 pad oxide 105 is grown. The pad oxide film 105 serves as an insulating isolation between the sensing unit 13 and the light absorbing units 11 and 15 in the sensing structure 1 (see FIG. 2).

Next, referring to FIG. 4D, light absorbing portions 106 and 106-1, which are silicon nitride, are deposited on the pad oxide film 105. At this time, the light absorbing portion 106 is formed by self-aligned (cavity 130) by the cavity (130). Reference numeral 106 denotes a light absorbing portion in the sensor region, and reference numeral 106-1 denotes a light absorbing portion incidentally formed outside the sensor region. As the light receiving layer 105 for converting the energy of incident photons into heat, CMOS process-friendly materials such as SiO and Si ₃ N ₄ may be used as a single layer or a multilayer structure.

4E, polysilicon 107 is deposited to fill the cavity 130. Next, the wafer is chemically-mechanical polishing (CMP) polished with a flat surface until silicon nitride outside the sensor region is exposed. Nitride acts here as a CMP etch stop. As a result, the polysilicon is processed to have a smooth upper surface of about 200 nm in thickness so as to be about the same height as the silicon nitride. It is important that the bottom surface of the oxide layer 108, ie the polysilicon and the interface, be smooth. This is because the sensing area in the finished device can be electrostatically deformed to dissipate the accumulated heat, thereby widening the contact area.

After that, the nitride 106-1 is peeled off and an oxide film 108 is formed which will form a part of the accumulated heat elimination layer 3. Next, the surface of the oxide film 108 is polished to provide a bonding surface.

Another handle wafer 111 is bonded to this bonding surface. The handle wafer 101 of the original SOI wafer is then completely removed through back-grinding to expose the opposite side of the sensing pattern. Referring now to FIG. 4F, a new SOI wafer is provided with the silicon layer flipped over, a new handle wafer 111 bonded below, and a sensing structure embedded therein.

In FIG. 4F, the wafer is patterned by lithography until the patterns of the sensor are fully exposed. Meanwhile, the sensor patterns are fully supported by the polysilicon layer filled in the cavity 130. By patterning another cavity is formed in the opposite direction of the cavity 130 previously filled with polysilicon relative to the sensor. This cavity also reduces the thickness of the sensor and provides space for polysilicon filling. Thereafter, a sacrificial oxide layer is deposited on the exposed upper surface of the sensing structure, and an oxide layer except for the upper surface of the sensor is removed by a RIE using a mask. As a result, the pad oxide layer 112 for insulation between the light absorbing portion 113 and the sensing portion is further grown.

Referring to FIG. 4G, silicon nitride constituting the light absorbing portion is further deposited and patterned on the oxide film. As a result, the crystalline silicon serving as the sensing unit is completely surrounded by the light absorbing unit. The oxide film remaining on the original polysilicon is removed so that the new polysilicon 107-1 can be attached to the old polysilicon 107.

Referring to FIG. 4H, as previously described, the polysilicon is further deposited around the sensing structure using the cavity as a mask by self alignment, thereby integrating with the previous polysilicon below. The wafer is then subjected to CMP processing so that the polysilicon is at the same height as the nitride absorbing portion. The nitride is then stripped off and the wafer further subjected to CMP and surface polishing to meet the flatness that meets the requirements of a typical CMOS process.

Thereafter, the sacrificial oxide film 114 is grown. Thereafter, the silicon layer 115 is deposited, and in a state as shown in FIG. 4I, a standard CMOS process is performed to form driving circuits. Standard CMOS processes for the circuit then go away from the sensor portion of the wafer. After the metal process finishes the circuit process, the sensor part is exposed using a PAD mask. RIE etching is stopped on polysilicon. Next, anisotropic wet etching using tetramethylammonium hydroxide (TMAH) is performed to remove all polysilicon 107 and 107-1 around the sensor. TMAH etching exhibits a selectivity of about 100: 1 for silicon over nitrides and oxides. (TMAH etch is 100: 1 selective to silicon over nitride and oxide) By this, as shown in FIG. 4J, the sensor structure is exposed in the form of being suspended on the cavity, resulting in a MEMS device that acts as a sensor and is thermally reset. .

It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the invention. Therefore, the scope of the present invention should not be limited to the above-described embodiments, but should be construed to include various embodiments within the scope of the claims.

1 is a plan view showing a schematic structure of a semiconductor device according to an embodiment of the present invention.
2 is a cross-sectional view of the semiconductor device of FIG. 1.
FIG. 3 is a front view schematically showing a state in which a sensing structure is elastically deformed for accumulating heat elimination in the embodiment shown in FIG. 2.

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4A to 4J are views illustrating a process of manufacturing a semiconductor device for resetting accumulated heat according to an embodiment of the present invention.

Claims (24)

An accumulation heat canceling unit; Forming a beam structure spaced apart from the accumulated heat canceling unit and supported at least one end thereof, and elastically deformed to erase the accumulated heat by contacting the accumulated heat canceling unit; And a sensing unit having an electrical resistance characteristic changed by heat, and a light-absorbing part formed integrally with the sensing unit at least on and under the sensing unit when viewed in cross section, and converting energy of incident photons into heat. It includes a sensing structure; When viewed from the cross section of the sensing structure, the light absorbing portion is formed on the left and right as well as the upper and lower portions of the sensing unit is formed to surround the sensing unit. delete The semiconductor device of claim 1, further comprising a structure in which the sensing structure is curved and advanced in a '⊂' or '⊃' shape when viewed in plan view near the end where the sensing structure is supported. The semiconductor device of claim 3, wherein the sensing structure is formed in a curved shape having a curved shape. The semiconductor device of claim 4, wherein the sensing structure has a width of a beam of a curved portion thicker than a width of a beam of a straight portion. The semiconductor device of claim 3, wherein the light absorbing part is formed of silicon nitride (Si ₃ N ₄ ), and the sensing part is a crystalline silicon thin film. The semiconductor device of claim 1, wherein the semiconductor device comprises: And a heat dischage driving part configured to elastically deform the sensing structure to reset the accumulated heat by applying a potential difference to the sensing unit and the accumulated heat canceling unit. The semiconductor device of claim 1, wherein the light absorber is tuned to convert energy of infrared rays into heat. The semiconductor device of claim 1, wherein the light absorber is tuned to convert energy of X-rays into heat. An accumulation heat canceling unit; Forming a beam structure spaced apart from the accumulated heat canceling unit and supported at least one end thereof, and elastically deformed to erase the accumulated heat by contacting the accumulated heat canceling unit; A detector that changes its secondary attribute by heat, and a light-absorbing unit that is formed integrally with the detector at least above and below the detector when viewed in cross section, and converts energy of incident photons into heat. and a sensing structure including part), When viewed from the cross section of the sensing structure, the light absorbing portion is formed on the left and right as well as the upper and lower portions of the sensing unit is formed to surround the sensing unit. delete The semiconductor device of claim 10, wherein the semiconductor device includes a structure that is bent and advanced in a '⊂' or '⊃' shape when viewed in plan view near the end where the sensing structure is supported. The semiconductor device of claim 12, wherein the sensing structure is formed in a curved shape having a curved shape. The semiconductor device of claim 13, wherein the sensing structure has a width of a beam of a curved portion thicker than a width of a beam of a straight portion. The semiconductor device of claim 10, wherein the light absorber is tuned to convert energy of infrared rays into heat. The semiconductor device of claim 10, wherein the light absorber is tuned to convert energy of X-rays into heat. a1) laminating a sensing layer on which the secondary attribute of the material is changed by heat on the handle wafer; a2) patterning the sensing layer to form a cavity; a3) forming a detector pattern of a beam structure in the cavity; a4) stacking a light receiving layer for converting energy of photons incident along the sensing unit pattern into heat; a5) flipping the wafer to remove the first handle wafer to expose the opposite side of the sensing pattern; a6) forming a beam structure sensing structure by further stacking the light receiving layer on the opposite side of the light receiving layer previously stacked in the sensing unit pattern; After the above step a4) b1) forming a filling layer to fill the cavity above the light receiving layer; More, After step a6) Selectively removing a packed layer to expose the sensing structure in a hanging form on the cavity; A semiconductor device manufacturing method further comprising. delete 18. The method of claim 17, wherein after step b1) b2) forming a heat accumulation layer on the packed layer; A semiconductor device manufacturing method further comprising. 20. The method of claim 19 wherein between step b1) and step b2) c1) grinding the upper surface of the packed layer to make the surface flat; A semiconductor device manufacturing method further comprising. 20. The method of claim 19, wherein after step b2) b3) further bonding a handle wafer on top of the heat accumulation layer; A semiconductor device manufacturing method further comprising. The method of claim 17, wherein the stacking of the sensing layer comprises stacking a crystalline silicon thin film by thin film transition. 18. The method of claim 17, wherein the light receiving layer is made of silicon nitride (Si ₃ N ₄ ). The method of claim 17, wherein the filling layer is made of poly-silicon, and the removing of the filling layer is performed by anisotropic wet etching.

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