KR101060382B1 - Field emission apparatus, and manufacturing method thereof - Google Patents

Abstract

In order to concentrate the electric field efficiently to emit electrons and to realize high emission current density at a low driving voltage, the field emission device 101 is disposed on the cathode layer 102 made of a conductor and the cathode layer. The insulating layer 103, the gate layer 104 which is arrange | positioned on the insulating layer 103, and consists of the conductor in which the slit 106 was formed, and the emitter 105 are provided, The insulating layer 103, From the slit 106, a gap from the cathode layer 102 to the opposing region 108 facing the slit 106 is formed, and the emitter 105 is disposed on the opposing region 108. It consists of a plurality of, typically three to three layers of thin carbon nanotubes having a structure having a visible protrusion entangled.

Description

Field emission apparatus and its manufacturing method {FIELD EMISSION DEVICE AND METHOD FOR MANUFACTURING SAME}

BACKGROUND OF THE INVENTION Field of the Invention The present invention relates to a field emission device, and a manufacturing method thereof, which are suitable for efficiently concentrating an electric field, emitting electrons, and realizing a high emission current density at a low driving voltage.

Background Art Conventionally, various electronic devices using carbon nanotubes have been proposed. Such a technique is disclosed in the literature described later.

Here, Patent Literature 1 discloses a technique of providing a mask having a perforated hole on a substrate, supplying a catalyst material, supported on the substrate, and growing carbon nanotubes therefrom.

Therefore, when the perforated conductor is used as the gate layer, the substrate as the conductor is used as the cathode layer, and the carbon nanotube is used as the emitter, it is considered that a field emission device can be formed.

In the field emission apparatus using the carbon nanotube conventionally, in order to support the carbon nanotube itself, it was common to thicken the diameter.

[Patent Document 1: Patent Publication No. 2006-035379]

However, when thick carbon nanotubes are used as emitters, the degree of electric field concentration is lowered, the driving voltage is increased, the mounting density of the carbon nanotubes serving as emitters is low, and the amount of current per carbon nanotube is increased. Therefore, the possibility that the carbon nanotube itself will be destroyed becomes high, and it falls into the vicious cycle that the carbon nanotube must be thickened further.

On the other hand, in the technique disclosed in Patent Document 1, since thin carbon nanotubes can be formed, electric field concentration can be efficiently generated, but the amount of electrons emitted from the emitter is often small.

Therefore, while using a thin carbon nanotube to efficiently cause electric field concentration, there is a strong desire to make the amount of electrons emitted as high as possible.

The present invention solves the above problems, and provides a field emission device suitable for realizing a high emission current density at a low driving voltage by efficiently concentrating an electric field and emitting electrons, and a manufacturing method thereof. It aims to do it.

The field emission device according to the first aspect of the present invention is an emitter comprising a cathode layer made of a conductor, an insulating layer disposed on the cathode layer, a gate layer made of a conductor formed on the insulating layer, and formed of a slit, and an emitter. It comprises and comprises as follows.

That is, as for the insulating layer, the space | gap from the said slit to the opposing area | region which opposes the said slit in a cathode layer is formed.

On the other hand, the emitter is composed of a structure in which a plurality of carbon nanotubes arranged on the opposing area are entangled.

Moreover, in the field emission apparatus of this invention, one part or all part of the said some carbon nanotube extends toward the said slit from the said facing area | region, and the shape of the said structure is a mountain shape, a brush shape, and a heat sequence. Iii) It may be configured to have a shape or a grass strip shape.

Moreover, in the field emission apparatus of this invention, the said carbon nanotube can be comprised so that it may be a single | mono layer carbon nanotube, a two-layer carbon nanotube, or a three-layer carbon nanotube.

Moreover, in the field emission apparatus of this invention, the width | variety of the said slit is 0.1 micrometer-3 micrometers, the length of the said slit is 10 micrometers-500 micrometers, and the thickness of the said insulating layer is 0.03 micrometer-10 micrometers. The diameter of the carbon nanotubes is from 0.4 nm to 10 nm, and the number density on the counter region of the carbon nanotubes can be configured to be 10 ² to 10 ⁵ per 1 μm ² .

Moreover, in the field emission apparatus of this invention, two or more said slits are formed in parallel, and the space | interval of these several slits can be comprised so that it may be 1 micrometer-1000 micrometers.

Further, the field emission device of the present invention further includes a catalyst layer for promoting growth of the carbon nanotubes between the emitter and the cathode layer, and for suppressing alloying of the catalyst layer and the cathode layer, the catalyst layer. It can be configured to further comprise a catalyst carrier layer supporting.

Moreover, the field emission apparatus of this invention can be comprised as follows.

That is, the cathode layer may include Mo, W, Ta, MoW, MoTa, Cr, other metals or alloys, TaSi _x , MoSi _x , WSi _x , CrSi _x , other metal silicides, TiN, TaN, other metal nitrides, It is formed by a single layer structure made of n-type or p-type dope polycrystalline silicon, or a lamination structure of these and Al or Cu, or a clad structure of Al or Cu.

The gate layer may be formed of Mo, W, Ta, MoW, MoTa, Cr, other metals or alloys, TaSi _x , MoSi _x , WSi _x , CrSi _x , other metal silicides, TiN, TaN, and other metal nitrides. By a single layer structure, and a laminated structure in which a part of n-type or p-type dope polycrystalline silicon is silicided.

The catalyst carrier layer is formed of a material containing any one or more elements of Si, Al, Mg, 0, N, and C.

The catalyst layer is formed of cobalt, iron, nickel, molybdenum, or a mixture containing these.

On the other hand, the insulating layer is formed by SiO _x, SiO _x N _y, a single layer structure, or, those of the laminated structure of SiN _x.

The manufacturing method of the field emission apparatus which concerns on the other viewpoint of this invention is equipped with a cathode layer film forming process, an insulation layer film forming process, a gate layer film forming process, a slit process, a void process, an emitter formation process, and is comprised as follows. do.

That is, in the cathode layer film forming process, a cathode layer made of a conductor is formed on the substrate.

On the other hand, in the insulating layer film forming process, an insulating layer made of an insulator is formed on the formed cathode layer.

In the gate layer film forming step, a gate layer made of a conductor is formed on the formed insulating layer.

And in a slit process, a slit is formed in the gate layer formed into a film.

On the other hand, in a space | gap process, an insulating layer is removed and a space | gap is formed so that the opposing area | region which opposes the said slit of a cathode layer may expose through the formed slit.

In the emitter forming step, an emitter made of a structure in which a plurality of carbon nanotubes is entangled is formed on the opposite region.

Moreover, in the manufacturing method of the field emission apparatus of this invention, in the emitter formation process, one part or all part of the said some carbon nanotube is extended toward the said slit from the said opposing area | region, and the shape of the said structure is extended, It can be configured to have a mountain range shape, a brush shape, a sequence shape, or a grass strip shape.

Moreover, in the manufacturing method of the field emission apparatus of this invention, the said carbon nanotube is formed by the chemical vapor deposition method which supplies carbon, and the said carbon nanotube is a single layer carbon nanotube and a two layer carbon nanotube. Alternatively, the supply concentration and the supply time of the carbon source can be set so as to form a three-layer carbon nanotube.

Moreover, in the manufacturing method of the field emission apparatus of this invention, the width | variety of the said slit is 0.1 micrometer-3 micrometers, the length of the said slit is 10 micrometers-500 micrometers, and the thickness of the said insulating layer is 0.03 micrometer. It is-10 micrometers, the diameter of the said carbon nanotube is 0.4 nm-10 nm, and the number density on the said opposing area | region of the said carbon nanotube can be comprised so that it may be 10 <^2> -10 <^5> per 1micrometer <^2> .

Moreover, in the manufacturing method of the field emission apparatus of this invention, two or more said slits are formed in parallel, and the space | interval of these some slits can be comprised so that it may be 1 micrometer-1000 micrometers.

Moreover, in the manufacturing method of the field emission apparatus of this invention, the said slit forms a resist layer on the said gate layer, and forms a slit in the said resist layer by lithography, a stamp, a scratch, or a crack formation. And it can be comprised so that it may form by etching the said gate layer through the said slit.

Moreover, the manufacturing method of the field emission apparatus of this invention further includes a catalyst carrier layer process and a catalyst layer process, and can be comprised as follows.

That is, in the catalyst carrier layer step, after the opposing region is exposed, the catalyst carrier layer is formed on the opposing region through the slit.

On the other hand, in the catalyst layer process, the catalyst layer which promotes the growth of the carbon nanotubes is formed on the catalyst carrier layer through the slits, and is supported on the catalyst carrier layer.

In this manner, alloying of the catalyst layer and the cathode layer is suppressed in the catalyst carrier layer.

Moreover, in the manufacturing method of the field emission apparatus of this invention, a cathode layer and a gate layer are formed by the sputtering method which supplies molybdenum, and a catalyst carrier layer is formed by the sputtering method which supplies aluminum oxide, The catalyst layer can be formed by a sputtering method for supplying cobalt, and the insulating layer can be configured to be formed by a chemical vapor deposition method for supplying silicon oxide.

According to the present invention, it is possible to provide a field emission device and a manufacturing method thereof, which are suitable for efficiently concentrating an electric field to emit electrons and realizing a high emission current density at a low driving voltage.

EMBODIMENT OF THE INVENTION Embodiment of this invention is described below. In addition, embodiment described below is for description, and does not limit the scope of the present invention. Therefore, although those skilled in the art can employ | adopt the embodiment which substituted each of these elements or all elements with equivalent to this, such embodiment is also included in the scope of the present invention.

Example 1

1 is a perspective view showing a state of a field emission device according to one of embodiments of the present invention, and FIG. 2 is a cross-sectional view of the field emission device. A description with reference to these drawings is as follows.

As shown in this figure, the field emission device 101 includes a cathode layer 102, an insulating layer 103, a gate layer 104, and an emitter 105.

The cathode layer 102 and the gate layer 104 have a thin plate-like shape made of a conductor such as molybdenum, and the insulating layer 103 made of an insulator such as silicon oxide is sandwiched therebetween.

In the case where molybdenum or the like is used as the cathode layer 102, it is common to form a thin film of a conductor on a substrate 121 such as a silicon substrate with an oxide film or a glass plate, but the conductive dope is used as the cathode layer 102. It is also possible to use the silicon substrate itself.

The slit 106 is formed in the gate layer 104, and the gap 107 is formed in the insulating layer 103 from the slit 106 to the cathode layer 102. .

Generally, although the shape of the space | gap 107 is drawn in inclined surface shape (it is the same below) in this figure, for easy understanding, it is the semi-cylindrical shape like the center of the slit 106, a fish cake shape, and a rectangular parallelepiped shape. It is also possible to comprise such a shape. Such a shape can be appropriately selected depending on the technique employed for etching and the conditions thereof.

The emitter 105 is composed of a structure in which a plurality of carbon nanotubes are entangled, and the carbon nanotubes have a narrow structure such as single-wall carbon nanotubes, two-layer carbon nanotubes, or three-layer carbon nanotubes. .

The emitter 105 is disposed on the opposing region 108 that is exposed to the void 107 in the cathode layer 102 and faces the slit 106. In the shape of the opening, while the thin carbon nanotubes support each other, a part of the protruding end protrudes to the outside like a thorn.

Typically, a shape such as a mountain range when the surface of the cathode layer 102 is considered to be plain, a shape such as a grass-like shape or a strip when the surface of the cathode layer 102 is considered to be flat, or The hair of the brush is shaped like a strip on the plane. Hereinafter, such a shape and a structure are called "visible shape structure." In this figure, it shows that the open shape of this visible structure is mountain range shape.

In the figure, only one slit 106 is shown. However, when the field emission device 101 is used as an element for a field emission display, the same width (for example, 0.1 µm or more) is used. 3 탆), and a plurality of slits 106 of the same length (for example, 10 탆 to 500 탆) are arranged in plural and in parallel at equal intervals (for example, 1 탆 to 1000 탆 interval.), Each facing each other. From the region 108, the emitter 105 by the carbon nanotube having a visible structure extends in the direction of the slit 106.

Since the thickness of the insulating layer 103 is typically 0.03 µm to 10 µm, and the carbon nanotubes constituting the emitter 105 are single layers to three layers, the diameter is typically 0.4 nm to 10 nm. to be. The mill can turn, 1㎛ 10 ² to 10 ⁵ per dog ² of the art on the opposing area of the carbon nanotube.

In addition, in order to grow the carbon nanotubes constituting the emitter 105 to the above-described water density, a transition metal such as molybdenum, cobalt, iron or nickel is formed between the emitter 105 and the cathode layer 102. The catalyst layer 112 which consists of these is arrange | positioned. As a catalyst used for the catalyst layer 112, although the binary system of cobalt- molybdenum or iron- molybdenum is considered especially effective, it is not limited to this, The mixture containing the said transition metal can be used.

In addition, a catalyst carrier layer 111 is disposed in order to suppress alloying of the catalyst layer 112 and the cathode layer 102 and to support the catalyst layer 112.

The catalyst carrier layer 111 is formed of a material containing any one or more elements of Si, Al, Mg, O, N, and C. For example, AlO _x or aluminosilicate (AlO _x and SiO _x). Complex oxides).

In the conventional field emission apparatus, a round hole was formed in a gate layer, and several carbon nanotubes were made to stand as an emitter toward this hole. For this reason, the diameter of a carbon nanotube becomes thick and the drive voltage becomes high because the efficiency of electric field concentration worsens, and for this reason, the vicious cycle that the diameter of a carbon nanotube must be made thicker has arisen.

In the present embodiment, the thin carbon nanotubes are entangled with each other, are supported together to form a visible structure, and face the slits 106, so that each tip of the emitter 105 can be made thin and very sharp. Therefore, the electric field can be efficiently concentrated, and when used as an FED, for example, the driving voltage can be reduced.

In addition, since the carbon nanotubes forming the emitter 105 are grown in a self-organized structure in a short time (typically several seconds) by distributing the catalyst layer 112 at an appropriate density, it is easy to manufacture. Do.

In the conventional field emission apparatus, in order to drill a round hole in the gate layer, an expensive pattern formation technique such as lithography has to be used, but in the present embodiment, in the formation of the slit 106, lithography Of course, mechanical pattern formation techniques, such as stamping, scratching, and crack formation, can be used, and manufacturing cost can be reduced.

Compared to a method of forming a hole in a gate layer proposed in the related art and disposing an emitter in the shape of a dot thereunder, in this embodiment, a slit 106 is formed in the gate layer 104 and an emitter ( By arranging 105 in a straight line, the mounting density of the emitter 105 can be greatly improved. As a result, the emission current can be greatly improved as a result. In addition, it is proven by experiment that the mounting density of the emitter 105 can be improved by at least two orders of magnitude.

In addition, in this embodiment, the emitter 105 can be arranged in a straight line because the emitter 105 is made of thin carbon nanotubes in which electric field concentration is effectively performed. In the conventional thick carbon nanotubes, since the electric field concentration is insufficient, the linear arrangement is inappropriate.

Hereinafter, an example of the manufacturing method of the field emission apparatus 101 which concerns on this embodiment is demonstrated in detail. In addition, the numerical specification shown below can be suitably changed and adjusted according to a use.

3A to 3L are cross-sectional views showing steps (a) to (l) of manufacturing the field emission device 101. A description with reference to this drawing is as follows.

First, in step (a), a glass substrate or a silicon substrate with an oxide film is prepared as the substrate 121 on which the field emission device 101 is to be formed (FIG. 3A).

Next, in step (b), molybdenum is deposited to a thickness of about 100 nm on the substrate 121 by a sputtering method to form a cathode layer 102 (FIG. 3B).

In step (c), silicon oxide is formed into a film with a thickness of 1 탆 by CVD to form an insulating layer 103 (Fig. 3C).

Subsequently, in step (d), molybdenum is deposited to a thickness of about 100 nm by sputtering to form a gate layer 104 (FIG. 3D).

In step (e), a resist for pattern forming is applied to form a resist layer 301 (FIG. 3E). In step (f), a pattern is applied to the resist layer 301 by electron beam lithography, photolithography, or the like. 302 is formed (FIG. 3F).

In general, there are a plurality of slits 106, so that the number of the patterns 302 becomes a plurality, and in this embodiment, the slit width of the patterns 302 is 0.1 µm to 0.5 µm, and the patterns 302 Although the space | interval is made into 5 micrometer space | interval, in this figure, the state with one pattern 302 is shown.

In step (g), the gate layer 104 is etched with a mixture of phosphoric acid, acetic acid and nitric acid to form the slit 106 (FIG. 3G).

In addition, the formation of the slit 106 may be carried out not only by the process from the application of the resist layer 301 to the etching but also by a mechanical patterning method such as stamp or scratch as described above.

In addition, in step (h), the insulating layer 103 is etched by the hydrofluoric acid aqueous solution, and the space | gap 107 is formed (FIG. 3H).

Next, in step (i), aluminum oxide is deposited to a thickness of 10 nm by the sputtering method, and the catalyst carrier layer 111 is formed on the opposite region 108 where the cathode layer 102 is exposed to the cavity 107. ) (FIG. 3i). At this time, the aluminum oxide layer 303 of the same thickness is also formed on the resist layer 301.

Thereafter, in step (j), the resist layer 301 and the aluminum oxide layer 303 on the resist layer 301 are peeled off with a peeling liquid (Fig. 3J).

In step (k), cobalt is supplied through the slit 106 according to the sputtering method, and the catalyst layer 112 is formed by forming a film having a thickness of 1 nm on the surface of the catalyst carrier layer 111 (FIG. 3K). .

The catalyst carrier layer 111 prevents the catalyst layer 112 and the cathode layer 102 from alloying, and also plays a role of further promoting the growth when the carbon nanotubes are grown on the catalyst layer 112. .

A catalyst layer is also formed on the gate layer 104, but since the catalyst carrier layer does not exist in between, the catalyst layer is alloyed with the gate layer 104. Therefore, even if the catalyst layer is formed on the gate layer 104, the effect can be eliminated.

In addition, the order of peeling of the resist layer 301 and the aluminum oxide layer 303 and formation of the catalyst layer 112 may be changed.

Subsequently, in step (l), carbon nanotubes are grown from the catalyst layer 112 by a CVD process for supplying a carbon source such as alcohol, to form an emitter 105 (FIG. 3L). As an example of the conditions for driving the CVD apparatus, a mixture of hydrogen and argon can be supplied at a pressure of 20 Torr (about 2670 Pa) and a temperature of 800 ° C. for up to 10 minutes at the time of catalytic reduction, and at the time of carbon nanotube growth, ethanol and argon Can be supplied at a pressure of 30 Torr (about 4000 Pa) and a temperature of 800 ° C. for up to 1 minute.

In this way, the field emission device 101 is manufactured. In addition, said manufacturing conditions are changeable and are also included in the scope of the present invention also about various modified examples.

For example, the following aspects can be considered about the material of each member.

First, as the cathode layer 102 or the gate layer 104, metals or alloys such as Mo, W, Ta, MoW, MoTa, Cr, n-type or p-type dope polycrystalline silicon, TaSi _x , MoSi _x , WSi _x Metal silicides such as metal silicide such as CrSi _x , TiN, TaN, etc. may be employed, and different materials may be employed in both layers.

Next, as the cathode layer 102, it is typical to adopt a single layer structure of the above material. However, when resistance is a problem due to the enlargement of the panel, it is also possible to manufacture the field emission device 101 by a low temperature process. Do. In this case, the cathode layer 102 may be a laminated structure of the common material and Al to Cu, or a clad structure of the common material and Al to Cu. Here, a "clad structure" covers the surface of Al-Cu with the said material, and provides chemical resistance etc ..

In addition, as the gate layer 104, a part of polycrystalline silicon may be silicided. This is because when Co, Ni, Mo, Fe, and the like are sprayed to form the catalyst layer 112, part of the silicon of the gate becomes CoSi _x , NiSi _x , MoSi _x , FeSi _x , and the resistance decreases.

When the gate layer 104 is made of polysilicon, since self-alignment occurs at the time of formation of the catalyst layer 112, the gate layer 104 necessarily has a laminated structure with silicide. In this case, there is an advantage that the resistance can be reduced. However, depending on the panel size, the gate layer 104 may not be formed as a single layer, but may be configured by combining the member and the wiring. .

In addition, the insulating layer 103 includes not only SiO _x as described above, but also any one or more elements of Si, C, O, and N, such as SiO _x N _y , SiN _x , or a laminated structure thereof. It is also possible to employ an insulator.

Experimental Example

Below, the result which confirmed the performance of the field emission apparatus 101 manufactured by various manufacturing conditions by experiment is demonstrated. The experiment was performed by manufacturing the five kinds of field emission apparatuses 101 of A-E.

In the gate layer 104 of the field emission device 101, slits 106 each having a width of 0.5 m, an interval of 5 m, and a length of about 0.5 mm were arranged in sections of 2 mm x 2 mm.

The thickness of the insulating layer 103 by silicon oxide is 1 μm, the thickness of the gate layer 104 by molybdenum is 120 nm, the thickness of the catalyst carrier layer 111 by aluminum oxide is 10 nm, and the catalyst layer (112) used cobalt.

Moreover, each specification of five types of A-E is as follows.

(Sample A) The cathode layer 102 is a silicon substrate, the thickness of the catalyst layer 112 is 1 nm, the CVD time is 15 seconds, and the CVD temperature is 700 ° C.

(Sample B) The cathode layer 102 is a silicon substrate, the thickness of the catalyst layer 112 is 1 nm, the CVD time is 5 seconds, and the CVD temperature is 800 ° C.

(Sample C) The cathode layer 102 is a silicon substrate, the thickness of the catalyst layer 112 is 1.2 nm, the CVD time is 5 seconds, and the CVD temperature is 800 ° C.

(Sample D) The cathode layer 102 is a silicon substrate, the thickness of the catalyst layer 112 is 1 nm, the CVD time is 15 seconds, and the CVD temperature is 800 ° C.

(Sample E) The cathode layer 102 forms molybdenum at a thickness of 140 nm on a silicon substrate with an oxide film, the thickness of the catalyst layer 112 is 1 nm, the CVD time is 5 seconds, and the CVD temperature is 800 ° C.

4, 5, 6, and 7 are explanatory diagrams showing the electron micrographs of the field emission device 101 manufactured according to the above specification. A description with reference to this drawing is as follows. Sample A is shown in FIG. 4, Sample B is shown in FIG. 5, Sample C is shown in FIG. 6, and Sample D is shown in FIG.

As shown in these photographs, it can be seen that the carbon nanotubes are entangled to form a visible structure, and the external shape forms a brush shape, a mountain range shape, a grass shape, or a hydrothermal shape.

6 and 7, in particular, the shape of the cavity 107 is found to be a semi-cylindrical shape having the slit 106 as a central axis, or a fish cake shape.

8 is a graph showing the relationship between the gate voltage and the emitter (anode) current density in Samples A to D. FIG. A description with reference to this drawing is as follows. In the figure, an anode current density (gate voltage) in which the horizontal axis is applied between the cathode layer 102 and the gate layer 104 and the vertical axis is flowed by electrons emitted from the emitter 105 is shown. , Respectively.

From this figure, it turns out that Sample A and Sample B have a high performance as a field emission apparatus compared with Sample C and Sample C. FIG.

Moreover, in Sample B, it turns out that a favorable value is obtained with an anode current density of 1 mA / cm <^2> with respect to a gate voltage of 70V.

9 is an explanatory diagram showing a state in which Samples A to C are used as a field emission display to emit light. A description with reference to this drawing is as follows.

As shown in the figure, light emission starts consistently when Sample V is applied at 25V and Sample B is applied at 20V, and in Sample B, it is understood that favorable light emission phenomenon is observed.

10 is a graph showing the relationship between the gate voltage and the emission (anode) current density in Sample B and Sample E. FIG. A description with reference to this drawing is as follows. The figure shows a gate voltage applied between the cathode layer 102 and the gate layer 104 on the horizontal axis, and an anode current density through which electrons are emitted from the emitter 105 on the vertical axis. The relationship between

In this experiment, the distance between the gate layer 104 and the anode electrode is 150 占 퐉, the gate voltage is changed between OV and 70V, and the anode voltage (voltage between the cathode layer 102 and the anode electrode) is 300V. The vacuum degree was 1 × 10 ^-5 Pa.

Comparing the example shown in this drawing with Sample B, it can be seen that the emission start voltage is reduced to 15V and the anode current density when viewed at the same gate voltage is improved.

Thus, the experiment showed that the field emission apparatus 101 which concerns on a present Example is favorable.

In addition, in this application, the priority based on patent application No. 2008-089078 for which it applied to Japan on March 31, 2008 shall be claimed, and as long as the law of the country to which this application is applied allows, It is assumed that the contents of the basic application are all followed.

According to the present invention, it is possible to provide a field emission device and a manufacturing method thereof, which are suitable for efficiently concentrating an electric field to emit electrons and realizing a high emission current density at a low driving voltage.

1 is a perspective view showing a state of a field emission device according to one of the embodiments of the present invention.

2 is a cross-sectional view of the field emission device.

3A is a cross-sectional view showing step (a) of the process of manufacturing a field emission device.

3B is a cross-sectional view showing step (b) of the process of manufacturing the field emission device.

3C is a cross-sectional view showing step (c) of the process of manufacturing the field emission device.

3D is a cross-sectional view showing step (d) of the process of manufacturing the field emission device.

3E is a cross-sectional view showing step (e) of the process of manufacturing the field emission device.

3F is a cross-sectional view showing step (f) of the process of manufacturing the field emission device.

3G is a cross-sectional view showing step (g) of the process of manufacturing the field emission device.

3H is a cross-sectional view showing step (h) of the process of manufacturing the field emission device.

3I is a cross-sectional view showing step (i) of the process of manufacturing the field emission device.

3J is a cross-sectional view showing step (j) of the process of manufacturing the field emission device.

3K is a cross-sectional view showing step (k) of the process of manufacturing the field emission device.

3l is a cross-sectional view showing step (l) of the process of manufacturing the field emission device.

4 is an explanatory diagram showing an electron microscope photograph of Sample A of the field emission device.

5 is an explanatory diagram showing an electron micrograph of Sample B of the field emission device.

6 is an explanatory diagram showing an electron micrograph of Sample C of the field emission device.

7 is an explanatory diagram showing an electron micrograph of Sample D of the field emission device.

8 is a graph showing the relationship between the gate voltage and the emitter (anode) current density in Samples A to D of the field emission device.

Fig. 9 is an explanatory diagram showing a state in which Samples A to C of the field emission device are used as a field emission display to emit light.

10 is a graph showing the relationship between the gate voltage and the emission (anode) current density in Sample B and Sample E of the field emission device.

Claims (15)

A cathode layer 102 made of a conductor, An insulating layer 103 disposed on the cathode layer 102, A gate layer 104 disposed on the insulating layer 103 and formed of a conductor having a slit 106 formed therein; In the insulating layer 103, a gap 107 is formed from the slit 106 to the opposing region 108 facing the slit 106 in the cathode layer 102. It further comprises an emitter 105 made of a structure in which a plurality of carbon nanotubes disposed on the opposing region 108 is entangled, The emitter (105) is field emission device (101), characterized in that arranged in a straight line along the shape of the slit (106). The method according to claim 1, Some or all of the plurality of carbon nanotubes extend from the opposing region 108 toward the slit 106, The open shape of the structure is a field emission device 101, characterized in that the mountain shape, brush shape, hydrothermal shape, or grass strip shape. The method according to claim 1, The carbon nanotubes are single-layer carbon nanotubes, two-layer carbon nanotubes, or three-layer carbon nanotubes. The method of claim 3, The width of the slit 106 is 0.1㎛ to 3㎛, The length of the said slit 106 is 10 micrometers-500 micrometers, The thickness of the said insulating layer 103 is 0.03 micrometers-10 micrometers, The carbon nanotubes have a diameter of 0.4 nm to 10 nm, The number density on the said counter region 108 of the said carbon nanotube is 10 <^2> -10 <^5> per 1 micrometer <^2> , The field emission apparatus 101 characterized by the above-mentioned. The method according to claim 4, The slits 106 are formed in plural in parallel, The field emission apparatus 101 characterized by the space | interval of the said some slit 106 being 1 micrometer-1000 micrometers. The method of claim 3, A catalyst layer 112 is further provided between the emitter 105 and the cathode layer 102 to promote growth of the carbon nanotubes. A field emission device (101), further comprising a catalyst carrier layer (111) carrying the catalyst layer (112) to suppress alloying of the catalyst layer (112) and the cathode layer (102). The method according to claim 6, The cathode layer 102 includes Mo, W, Ta, MoW, MoTa, Cr, other metals or alloys, TaSi _x , MoSi _x , WSi _x , CrSi _x , other metal silicides, TiN, TaN, other metals It is formed by a single layer structure made of nitride, n-type or p-type dope polycrystalline silicon, or a lamination structure of these and Al or Cu, or a clad structure of Al or Cu, The gate layer 104 may include Mo, W, Ta, MoW, MoTa, Cr, other metals or alloys, TaSi _x , MoSi _x , WSi _x , CrSi _x , other metal silicides, TiN, TaN, other metals. It is formed by a single layer structure made of nitride, a laminate structure in which a part of n-type or p-type dope polycrystalline silicon is silicided, The catalyst carrier layer 111 is formed of a material containing at least one element of Si, Al, Mg, O, N, C, The catalyst layer 112 is formed of cobalt, iron, nickel, molybdenum, or a mixture containing these, The insulation layer (103) is formed by a single layer structure of SiO _x , SiO _x N _y , SiN _x , or a stacked structure thereof. A cathode layer deposition step of forming a cathode layer 102 made of a conductor on a substrate, An insulating layer forming step of forming an insulating layer 103 made of an insulator on the formed cathode layer 102, A gate layer forming step of forming a gate layer 104 made of a conductor on the formed insulating layer 103, A slit process of forming a slit 106 in the deposited gate layer 104, The air gap process of forming the voids 107 by removing the insulating layer 103 so as to expose the opposite region 108 of the cathode layer 102 facing the slits 106 through the formed slit 106. , And a emitter forming step of forming an emitter 105 formed of a structure in which a plurality of carbon nanotubes are entangled on the opposing region 108 and arranged in a linear shape along the shape of the slit 106. Method for manufacturing a field emission device 101, characterized in that. The method according to claim 8, In the said emitter formation process, one part or all part of the said some carbon nanotube is extended from the said facing area 108 toward the said slit 106, and the shape shape of the said structure is made into a mountain shape, a brush shape, and a hydrothermal shape. Or, the manufacturing method of the field emission apparatus 101 characterized by having a grass strip shape. The method according to claim 9, The carbon nanotubes are formed by a chemical vapor deposition method for supplying carbon, The supply concentration and supply time of the carbon source are set so that the carbon nanotubes become single-walled carbon nanotubes, two-layered carbon nanotubes, or three-layered carbon nanotubes. Manufacturing method. The method according to claim 9, The width of the slit 106 is 0.1㎛ to 3㎛, The length of the said slit 106 is 10 micrometers-500 micrometers, The thickness of the said insulating layer 103 is 0.03 micrometer-10 micrometers, The carbon nanotubes have a diameter of 0.4 nm to 10 nm, The number density of the said carbon nanotubes on the said counter region (108) is 10 <^2> -10 <^5> per 1 micrometer <^2> , The manufacturing method of the field emission apparatus (101) characterized by the above-mentioned. The method of claim 11, The slits 106 are formed in plural in parallel, The space | interval of the said some slit (106) is 1 micrometer-1000 micrometers, The manufacturing method of the field emission apparatus 101 characterized by the above-mentioned. The method of claim 11, The slit 106 forms a resist layer on the gate layer 104, forms slit 106 in the resist layer by lithography, stamping, scratching, or cracks, and forms the slit 106. A method of manufacturing a field emission device (101), characterized in that it is formed by etching the gate layer (104). The method according to claim 10, A catalyst carrier layer process of forming a catalyst carrier layer 111 on the opposite region 108 through the slit 106 after the opposite region 108 is exposed, A catalyst layer process is further provided on the catalyst carrier layer 111 to form a catalyst layer 112 for promoting growth of the carbon nanotubes on the catalyst carrier layer 111 and supported on the catalyst carrier layer 111. and, A method for producing a field emission device (101), wherein the catalyst carrier layer (111) suppresses alloying of the catalyst layer (112) and the cathode layer (102). The method according to claim 14, The cathode layer 102 and the gate layer 104 are formed by a sputtering method for supplying molybdenum, The catalyst carrier layer 111 is formed by a sputtering method for supplying aluminum oxide, The catalyst layer 112 is formed by a sputtering method for supplying cobalt, The said insulating layer (103) is formed by the chemical vapor deposition method which supplies a silicon oxide, The manufacturing method of the field emission apparatus (101) characterized by the above-mentioned.

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