KR101057119B1 - Exhaust system and substrate processing apparatus having same - Google Patents

Abstract

The exhaust device has an exhaust line and a valve unit. The exhaust line discharges foreign substances in the process chamber to the outside using the vacuum pressure. The valve is installed in the exhaust line and turns on / off that the vacuum pressure is provided to the input end side of the exhaust line. The valve unit has a bellows valve which relaxes and contracts according to the pressure of air injected therein, and opens and closes a passage in the exhaust line, and a cover covering the bellows valve. Since the cover prevents foreign matter from being deposited on the bellows valve, it is possible to prevent the bellows valve from being damaged by the foreign matter.

Description

Exhaust system and substrate processing apparatus having same TECHNICAL FIELD

The present invention relates to an exhaust device, and more particularly, to an exhaust device for exhausting reaction byproducts and a substrate processing apparatus having the same.

In order to manufacture a semiconductor device, a lithography process using a photoresist is necessarily accompanied. The photoresist is composed of a light-sensitive organic polymer or a mixture of a photosensitive agent and a polymer. After the exposure and dissolution process, a photoresist is formed on the substrate. Transcribe. Such a polymer is called a photoresist, and a process of forming a fine pattern on a substrate using a light source is called a lithography process.

In the semiconductor manufacturing process, photoresists used as masks in the ion implantation process or forming various microcircuit patterns such as line or space patterns on a substrate are mainly ashed. It is removed from the substrate through an ashing process.

In general, the ashing process is used to remove the photoresist by reacting the oxygen plasma with the photoresist while the wafer is placed on a heater chuck heated to a high temperature (200 ~ 300 ℃). Oxygen (O ₂ ) gas is mainly used as a reaction gas, and other gases may be mixed to increase ashing efficiency.

The ashing process is performed in a process chamber that is blocked from the outside, and the reaction gas, unreacted gas, and reaction by-products generated during the ashing process are discharged to the outside through an exhaust line connected to the process chamber. The exhaust line also controls the process pressure in the process chamber in addition to discharging reaction by-products.

In this exhaust line, a bellows valve is provided to turn on / off that vacuum pressure is provided to the process chamber. However, in the process of evacuating the reaction by-products, the reaction by-products are also deposited on the bellows valves, which may damage the bellows valves.

It is an object of the present invention to provide an exhaust device capable of extending the replacement timing of the valve.

Moreover, the objective of this invention is providing the substrate processing apparatus provided with said exhaust apparatus.

An exhaust device according to one feature for realizing the above object of the present invention comprises an exhaust line and a valve unit.

The exhaust line is connected to the process chamber and discharges foreign substances in the process chamber to the outside using a vacuum pressure. A valve unit is installed in the exhaust line and turns on / off that the vacuum pressure is provided to the input end side of the exhaust line.

The valve unit has a columnar shape, a bellows valve for opening and closing a passage in the exhaust line by being relaxed and contracted according to the pressure of air injected therein, and surrounding the bellows valve, wherein foreign matter is accumulated in the bellows valve. And a cover to prevent it.

Here, the cover surrounds the side of the bellows valve.

Specifically, the cover includes a first plate surrounding the side of the bellows valve, the first plate provided adjacent to the first end of the bellows valve, and the side of the bellows valve and opposing the first end of the bellows valve. And a second plate installed adjacent to the second end.

Further, the substrate processing apparatus according to one feature for realizing the above object of the present invention comprises a process chamber, a support member, and an exhaust member.

The process chamber provides a space in which a processing process of the substrate is performed, and an exhaust port is formed. A support member is installed in the process chamber and supports the substrate during the processing process. The exhaust member is connected to the exhaust port and exhausts foreign substances in the process chamber.

Specifically, the exhaust member is connected to the exhaust port, the exhaust line for discharging foreign matter in the process chamber to the outside by using a vacuum pressure, and is provided in the exhaust line, the vacuum pressure to the input end side of the exhaust line And a valve unit for turning on / off the one provided. The valve unit has a columnar shape, a bellows valve for opening and closing a passage in the exhaust line by being relaxed and contracted according to the pressure of air injected therein, and surrounding the bellows valve, wherein foreign matter is accumulated in the bellows valve. And a cover to prevent it.

According to the present invention described above, the valve unit is provided with a cover for covering the bellows valve, it is possible to prevent the foreign matter deposited on the bellows valve. As a result, damage to the bellows valve can be prevented and the replacement cycle of the bellows valve can be extended.

Hereinafter, with reference to the accompanying drawings will be described in detail a preferred embodiment of the present invention. Hereinafter, an ashing apparatus will be described as an example, but the present invention can be applied to a semiconductor manufacturing apparatus including a cleaning apparatus and a deposition apparatus.

1 is a schematic view showing a substrate processing apparatus according to an embodiment of the present invention.

Referring to FIG. 1, the substrate processing apparatus 1000 includes a processing part 100, a plasma generating part 200, and an exhausting part 300. The process processor 100 performs a substrate treatment process such as an ashing process. The plasma generator 200 generates a plasma required for the substrate process and supplies the plasma to the process processor 100. The exhaust unit 300 discharges gas and reaction by-products inside the process processor 100 to the outside.

Specifically, the process processor 100 may include a housing 110, first and second chucks 120a and 120b, an airtight cover 140, and first and second shower heads 150a and 150b. ).

The process chamber 110 provides a space for performing the ashing process. That is, the internal space of the process chamber 110 is partitioned into a first space FS and a second space SS, and the substrate (in the first space FS and the second space SS, respectively) during the processing of the substrate. W) is loaded and an ashing process is performed in each of the first second spaces FS and SS.

The sidewall of the process chamber 110 is provided with a substrate entrance 112a through which the substrate W enters and leaves, and the substrate entrance 112a is opened and closed by an opening and closing member such as a slit door (not shown). Exhaust ports 111a, 111b, and 111c are provided in the bottom surface 111 of the process chamber 110. The exhaust ports 111a, 111b, and 111c discharge gas or reaction by-products inside the process chamber 110, are formed around the first and second chucks 120a and 120b, and are connected to the exhaust part 300. .

The first and second chucks 120a and 120b are installed in the process chamber 110. The first chuck 120a is installed in the first space FS, and the second chuck 120b is installed in the second space SS. During the process, the substrates W are seated on the first and second chucks 120a and 120b, respectively, and the substrates W are processed while being seated on the first and second chucks 120a and 120b. Here, the first and second chucks 120a and 120b may be an electrostatic chuck.

In addition, the first and second chucks 120a and 120b heat the substrate W mounted at the process to a predetermined process temperature. To this end, the first and second chucks 120a and 120b may include lift pins and at least one heater for loading and unloading the substrate W, respectively. The first and second chucks 120a and 120b are connected to the power supply units 130a and 130b, and the power supply units 130a and 130b apply bias power of a predetermined size to the connected chucks I 120a and 120b. do.

Meanwhile, an airtight cover 140 and first and second shower heads 150a and 150b are installed on the first and second chucks 120a and 120b. The sealing cover 140 is provided on the process chamber 110 and is coupled to the process chamber 110 to seal the first and second spaces FS and SS. That is, the airtight cover 140 includes a first cover part 141 and a second cover part 142 formed in one-to-one correspondence with the first and second spaces FS and SS. The first and second cover parts 141 and 142 are coupled to the plasma generating unit 200, respectively, and inlets through which the plasma from the plasma generating unit 200 flows are formed. Induction spaces GS1 and GS2 for providing plasma introduced through the inlets to the first and second shower heads 150a and 150b are provided in the first and second cover parts 141 and 142. It is formed in one-to-one correspondence with the second chuck (120a, 120b). In one example of the present invention, each of the guide spaces GS1 and GS2 is formed in an inverted funnel shape.

The first shower head 150a is installed under the first cover part 141, and the second shower head 150b is installed under the second cover part 142. The first shower head 150a is installed on the upper portion of the first chuck 120a, and the substrate W on which the plasma introduced into the guide space GS1 of the first cover part 141 is seated on the first chuck 120a. Spray toward The second shower head 150b is installed on the upper portion of the second chuck 120b, and the substrate W on which the plasma introduced into the guide space GS2 of the second cover portion 142 is seated on the second chuck 120b. Spray toward

On the other hand, the plasma generating unit 200 is provided on the upper portion of the first and second cover portions (141, 142). The plasma generation unit 200 includes first and second remote plasma generation units 210 and 220 for generating plasma, respectively. The first remote plasma generating unit 210 is installed above the first cover part 141, and generates plasma and provides the plasma to the guide space GS1 in the first cover part 141. The second remote plasma generating unit 220 is installed on the upper portion of the second cover portion 142, and generates plasma and provides the plasma to the guide space GS2 in the second cover portion 142.

In detail, the first and second remote plasma generators 210 and 220 may include the magnetrons 211 and 221, the waveguides 212 and 222, the plasma source units 213 and 223, and the gas supply pipes 214. 224).

In detail, the magnetrons 211 and 221 generate microwaves for plasma generation, and the waveguides 212 and 222 transmit microwaves generated from the connected magnetrons 211 and 221 to the plasma source parts 213. , 223). The gas supply pipes 214 and 224 are connected to the plasma source parts 213 and 223, and supply the reaction gas required for plasma generation to the connected plasma source parts 213 and 223.

In the plasma source portions 213 and 223, plasma is generated by the reaction gas from the gas supply pipes 214 and 224 and the microwaves from the magnetrons 211 and 221.

The plasma source parts 213 and 223 are coupled to the first and second cover parts 141 and 142, and the plasma generated from the plasma source parts 213 and 223 may be the first and second cover parts 141 and 141. 142 is provided in the guide spaces GS1 and GS2 and is provided to the first and second spaces FS and SS through the first and second showerheads 150a and 150b.

On the other hand, the exhaust unit 300 is provided below the process processing unit 100. The exhaust unit 300 controls the pressure of the first and second spaces FS and SS and exhausts the internal air. The exhaust part 300 includes a main exhaust part 310, auxiliary exhaust parts 320a and 320b, and a valve unit 330.

In detail, the main exhaust part 310 communicates with the main exhaust hole 111a formed in the bottom surface 111 of the process chamber 110. The main exhaust hole 111a is located in the region between the first chuck 120a and the second chuck 120b, and the main exhaust portion 310 is the first and second spaces FS introduced through the main exhaust hole 111a. Exhaust gas and reaction byproduct in SS). The sub exhaust parts 320a and 320b communicate with the sub exhaust holes 111b and 111c formed in the bottom surface 111 of the process chamber 110. The sub exhaust holes 111b and 111c are positioned adjacent to the sidewall 112 of the process chamber 110, and the sub exhaust parts 320a and 320b are introduced through the sub exhaust holes 111b and 111c. The gas and reaction byproducts in the second spaces FS and SS are exhausted. Output terminals of the sub exhaust parts 320a and 320b are connected to the main exhaust part 310.

The main exhaust part 310 includes a first exhaust line 311 connected to the bottom surface 111 of the process chamber 110, a second exhaust line 312 connected to the first exhaust line 311, and a second exhaust line And a third exhaust line 313 connected to 312.

The first exhaust line 311 communicates with the main exhaust hole 111a formed in the bottom surface 111 of the process chamber 110 and extends substantially perpendicular to the ground. The second exhaust line 312 extends such that an input end is connected to the first exhaust line 311 and is inclined with respect to the ground from the first exhaust line 311. The third exhaust line 313 extends such that the input end is connected to the second exhaust line 312 and inclined in a direction opposite to the second exhaust line 312 with respect to the ground. The third exhaust line 313 is connected with the vacuum pump 340. The vacuum pump 340 forcibly sucks gas in the first and second spaces FS and SS through the main exhaust part 310 and the sub exhaust part 320 to adjust the internal pressure of the process chamber 110, Reaction by-products in the first and second spaces FS and SS are also forcibly sucked and exhausted to the outside.

Meanwhile, a valve unit 330 is installed in the second exhaust line 312 to turn on / off that the vacuum pressure from the vacuum pump 340 is provided to the first and second spaces FS and SS. The valve unit 330 is installed to correspond to the point at which the second exhaust line 312 and the third exhaust line 313 are connected, and communicates between the second exhaust line 312 and the third exhaust line 313. Block it.

Hereinafter, the configuration of the valve unit 330 will be described in detail with reference to FIGS. 2 to 4.

FIG. 2 is a cross-sectional view illustrating the valve unit illustrated in FIG. 1, FIG. 3 is a perspective view illustrating the first plate illustrated in FIG. 2, FIG. 4 is a perspective view illustrating the second plate illustrated in FIG. 2, and FIG. It is sectional drawing along the cutting line II 'of FIG.

1 and 2, in this embodiment, the valve unit 330 has a generally circular columnar shape, but the shape of the valve unit 330 is not limited thereto. The valve unit 330 may include a blocking part 331, a bellows 332, a coupling part 333, and a cover 336. The blocking unit 331 is positioned adjacent to the input end of the second exhaust line 312, has a disc shape, and is movable in the longitudinal direction of the second exhaust line 312 by the bellows 332.

The bellows 332 is interposed between the blocking part 331 and the coupling part 333, and has a long columnar shape in a length direction of the second exhaust line 312, and has an input end of the third exhaust line 313 on one side. This is located. The bellows 332 relaxes and contracts in the longitudinal direction according to the pressure of the air injected therein, thereby changing the vertical position of the blocking portion 331 in the second exhaust line 312. The connecting passage between the second exhaust line 312 and the third exhaust line 313 is opened and closed according to the vertical position of the blocking portion 331.

The coupling part 333 is positioned at the output end side of the second exhaust line 312 and is fixedly coupled to the second exhaust line 312. The bellows driver 350 which controls the relaxation and contraction of the bellows 332 is coupled to the bottom surface of the coupling part 333. The bellows driving unit 350 controls the degree of relaxation and contraction of the bellows 332 by adjusting the pressure of air injected into the bellows 332.

As such, since the valve unit 330 is installed in the exhaust passage through which the gas and the reaction byproduct of the process processing unit 100 are exhausted, that is, the second exhaust line 312, the reaction byproduct is deposited on the valve 330 during the exhaust process. Can be. In particular, when the reaction by-products are deposited on the bellows 332, the bellows may be damaged during the shrinking of the bellows 332.

In order to prevent damage of the bellows 332, the valve unit 330 includes a cover 336 that protects the bellows 332. The cover 336 surrounds the bellows 332 and prevents foreign matter, ie reaction byproducts, from being deposited on the bellows 332.

Hereinafter, the configuration of the cover 336 will be described in detail with reference to the drawings.

2 to 5, the cover 336 may include first and second plates 334 and 335. The first plate 334 surrounds the side of the bellows 332 and has a generally circular columnar shape, and one end is fixed to the blocking portion 331. In this embodiment, the first plate 334 is sized to cover the entire side of the bellows 332. The second plate 335 surrounds the side of the bellows 332, has a generally circular columnar shape, and one end is fixed to the coupling part 333. Accordingly, since the side of the bellows 322 and the side of the coupling portion 333 are located inside the cover 336, the cover 336 prevents the reaction by-products from being deposited on the bellows 332 and the coupling portion 333. can do.

When the bellows 332 is relaxed, the other end of the first plate 334 surrounds the other end of the second plate 335 and is spaced apart from the other end of the second plate 335. When the bellows 332 is retracted, the first plate 334 vertically moves toward the second plate 335 by the retraction of the bellows 332. As such, since the cover 336 is configured to be separated into two plates 334 and 335, bending of the cover 336 does not occur when the bellows 332 is relaxed and contracted.

In addition, the first plate 334 may further include a brush 334b for removing the foreign matter deposited on the second plate 335. The brush 334b is installed to protrude inward from the other end of the first plate 334 and is interposed between the first plate 334 and the second plate 335. The brush 334b is vertically moved by the vertical movement of the first plate 334 to remove foreign substances deposited on the outer surface of the second plate 335 by applying a physical force. Accordingly, foreign matter deposited on the outer surface of the second plate 335 is prevented from flowing into the cover 336 and deposited on the bellows 332.

On the other hand, the second plate 335 may further include a stopper 335b for limiting the vertical movement distance of the brush 334b. The stopper 335b protrudes outward from the other end of the second plate 335 and functions as a locking jaw. When the brush 334b moves to the blocking portion 331, the stopper 335b stops the brush 334b from moving to the blocking portion 331. Accordingly, the stopper 335b can prevent the brush 334b from escaping from the region where the second plate 335 is located, thereby preventing the brush 334b from entering the inside of the second plate 335. .

In addition, the first and second plates 334 and 335 may further include a coupling groove 334c and a coupling protrusion 335c for fixing the moving shaft during vertical movement by contraction and relaxation of the bellows 332. That is, the coupling groove 334c extending in the longitudinal direction of the first plate 334 is formed on the inner surface of the first plate 334. A coupling protrusion 335c extending in the longitudinal direction of the second plate 335 is formed on the outer surface of the second plate 335, and the coupling protrusion 335c is inserted into the coupling groove 334c. In the vertical movement of the first plate 334, since the coupling protrusion 335c is inserted into the coupling groove 334c, the vertical movement is performed while the moving shaft is fixed, and the first plate 334 is stable. Can be moved.

FIG. 6 is a cross-sectional view illustrating an operation state of removing the foreign matter deposited on the cover illustrated in FIG. 2.

Referring to FIG. 6, reaction byproducts are deposited on an outer surface of the second plate 335 in a process of removing reaction byproducts in the process processor 100. To remove this, the bellows drive 350 alternately repeats the contraction and relaxation of the bellows 332, and the first plate 334 reciprocates in the vertical direction by contraction and relaxation of the bellows 332. Accordingly, the brush 334b removes reaction by-products deposited on the second plate 335 while reciprocating in the vertical direction.

Although described with reference to the embodiments above, those skilled in the art will understand that the present invention can be variously modified and changed without departing from the spirit and scope of the invention as set forth in the claims below. Could be.

1 is a schematic view showing a substrate processing apparatus according to an embodiment of the present invention.

2 is a cross-sectional view of the valve unit shown in FIG. 1.

3 is a perspective view illustrating the first plate illustrated in FIG. 2.

4 is a perspective view illustrating the second plate illustrated in FIG. 2.

5 is a cross-sectional view taken along the line II ′ of FIG. 2.

FIG. 6 is a cross-sectional view illustrating an operation state of removing the foreign matter deposited on the cover illustrated in FIG. 2.

Description of the Related Art [0002]

100: process processing unit 200: plasma generation unit

300: exhaust

Claims (16)

An exhaust line connected to the process chamber and discharging foreign substances in the process chamber to the outside by using a vacuum pressure; And A valve unit installed in the exhaust line and configured to turn on / off that the vacuum pressure is provided to an input end side of the exhaust line; The valve unit, A bellows valve having a columnar shape and relaxed and contracted according to the pressure of the air injected therein, to open and close a passage in the exhaust line; And A cover surrounding a side of the bellows valve and preventing foreign matter from being deposited on the bellows valve; The cover, A first plate disposed adjacent the first end of the bellows valve; A second plate disposed adjacent to a second end of said bellows valve opposite said first end; A brush part interposed between the first plate and the second plate and applying a physical frictional force to remove foreign substances deposited on any one of the first and second plates, The first plate and the second plate are positioned so that the ends adjacent to each other overlap, And the first and second plates are movable in the longitudinal direction of the bellows valve. delete delete delete The method of claim 1, And the first and second plates each have a ring shape and horizontally move in opposite directions to each other. The method of claim 5, One end of the first plate is fixed to the first end, One end of the second plate is fixed to the second end, And when the bellows valve closes the passage of the exhaust line, the other end of the first plate and the other end of the second plate overlap each other. delete The exhaust apparatus according to claim 1, wherein the brush unit is fixed to one of the first and second plates. The method of claim 1, Exhaust device of the first and second plate, the plate is not provided with the brush portion further comprises a stopper protruding from one surface to limit the moving distance of the brush portion. An exhaust line connected to the process chamber and discharging foreign substances in the process chamber to the outside by using a vacuum pressure; And A valve unit installed in the exhaust line and configured to turn on / off that the vacuum pressure is provided to an input end side of the exhaust line; The valve unit, A bellows valve having a columnar shape and relaxed and contracted according to the pressure of the air injected therein, to open and close a passage in the exhaust line; And A cover surrounding a side of the bellows valve and preventing foreign matter from being deposited on the bellows valve; The cover, A first plate disposed adjacent the first end of the bellows valve; A second plate disposed adjacent to a second end of the bellows valve opposite the first end, Either one of the first and second plate is provided with a coupling projection, the other one of the exhaust device characterized in that for providing a coupling groove into which the coupling projection is inserted. An exhaust line connected to the process chamber and discharging foreign substances in the process chamber to the outside by using a vacuum pressure; And A valve unit installed in the exhaust line, the valve unit turning on / off that the vacuum pressure is provided to an input end side of the exhaust line, The valve unit, A bellows valve having a columnar shape and relaxed and contracted according to the pressure of the air injected therein, to open and close a passage in the exhaust line; And A cover surrounding the bellows valve and preventing foreign matter from being deposited on the bellows valve; The exhaust line, A first exhaust line connected to the process chamber and extending generally perpendicular to the ground; A second exhaust line extending inclined with respect to the ground from the first exhaust line; And A third exhaust line extending from the second exhaust line and inclined in a direction opposite to the second exhaust line with respect to the ground; The vacuum pressure is provided to the first exhaust line through the second exhaust line from the third exhaust line, And the bellows valve is installed in the second exhaust line to open and close a connection passage between the second exhaust line and the third exhaust line. A process chamber providing a space in which a processing process of the substrate is performed, wherein an exhaust port is formed; A support member installed in the process chamber and supporting the substrate during the processing process; And A exhaust member connected to the exhaust port and configured to exhaust foreign matter in the process chamber; The exhaust member, An exhaust line connected to the exhaust port and configured to discharge foreign substances in the process chamber to the outside by using a vacuum pressure; And A valve unit installed in the exhaust line, the valve unit turning on / off that the vacuum pressure is provided to an input end side of the exhaust line, The valve unit, A bellows valve having a columnar shape and relaxed and contracted according to the pressure of air injected into the bellows to open and close a passage in the exhaust line; And A cover surrounding a side of the bellows valve and preventing foreign matter from being deposited on the bellows valve; The cover, A first plate disposed adjacent the first end of the bellows valve; A second plate disposed adjacent to a second end of said bellows valve opposite said first end; And a brush part interposed between the first plate and the second plate and applying a physical frictional force to remove foreign substances deposited on any one of the first and second plates. delete delete delete The method of claim 12, And a plasma generating member connected to an upper portion of the process chamber and generating a plasma during the process and providing the plasma to an upper portion of the substrate placed on the support member.

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