KR101053225B1 - Thin film deposition method - Google Patents

Abstract

The present invention relates to a method for depositing a thin film having uniform physical properties on a plurality of substrates seated in one reactor. The thin film deposition apparatus used in the thin film deposition method according to the present invention includes a substrate support and a gas injection unit. The gas injector includes a source gas supplier, a reaction gas supplier, and a plurality of purge gas supplies disposed between the source gas supplier and the reaction gas supplier, and the source gas supplier, the reaction gas supplier, and the purge gas supplier are disposed radially. The substrate support and the gas injector are rotatably installed. In the thin film deposition method according to the present invention, after placing a plurality of substrates on the substrate mounting portion, the pretreatment for supplying any one of the source gas and the reactive gas through the gas injection portion onto the substrate support portion while rotating the substrate support portion and the gas injection portion relative to each other. Perform the steps. After the substrate support and the gas injector are rotated relative to each other, a main process of depositing a thin film on the substrate by supplying the source gas and the reaction gas together on the substrate support through the gas injector is performed. At the same time, a post-treatment step of supplying one of the source gas and the reactive gas through the gas injection unit on the substrate support unit is performed.

Description

Thin film deposition method {Method of depositing thin film}

The present invention relates to a method for depositing a thin film during a semiconductor manufacturing process, and more particularly, to a method for depositing a uniform thin film on a plurality of substrates.

In the thin film manufacturing process, atomic layer deposition (ALD) or cyclic chemical vapor deposition (cyclic chemical vapor deposition) (cyclic CVD) has been studied to further improve the physical properties of the thin film. However, in the conventional ALD or cyclic CVD, since the gas supply is performed through the operation of the valve, the process becomes complicated, and the frequent operation of the valve shortens the life of the valve and increases the maintenance cost of the equipment. . In order to alleviate this drawback, a thin film deposition apparatus capable of implementing ALD or cyclic CVD without a valve operation has been developed. A schematic configuration of such a thin film deposition apparatus is shown in FIG. 1. FIG. 2 is a cross-sectional view taken along the line II-II of FIG. 1.

1 and 2, the thin film deposition apparatus 100 includes a reactor 110, a substrate supporter 120, and a gas injection unit 130.

The reactor 110 includes a bottom 111, an outer wall 112, and an upper plate 113. The bottom portion 111 is formed in the shape of a disc, the outer wall portion 112 is formed extending vertically upward from the edge of the bottom portion 111 is made of a closed curved shape. The outer wall portion 112 is provided with a substrate w transfer passage (not shown) through which the substrate w enters and exits. The upper plate 113 is formed in a disk shape, is detachably coupled to the upper surface of the outer wall portion 112. When the upper plate 113 is coupled to the upper surface of the outer wall portion 112, a predetermined space is formed in the reactor 110, and in particular, the upper portion of the substrate support portion 120 and the gas injector 130 is disposed above the substrate support portion 120. The thin film deposition space 140 is formed therebetween. A sealing member such as an O-ring (not shown) is interposed between the lower surface of the upper plate 113 and the upper surface of the outer wall portion 112. An exhaust port (not shown) for discharging unnecessary gas and particles remaining in the reactor 110 is formed at the bottom 111 or the outer wall 112.

The substrate support part 120 is installed inside the reactor 110 and includes a susceptor 121, a substrate seating part 122, a shaft 123, and a heater (not shown).

The susceptor 121 is rotatably installed in the reactor 110 in the shape of a disc. A plurality of substrate seating portions 122 are formed on the upper surface of the susceptor 121. The substrate seating part 122 is disposed along the circumferential direction of the upper surface of the substrate support part 120, and the substrate w is seated on each substrate seating part 122. One end of the shaft 123 is coupled to a lower surface of the susceptor 121, and the other end penetrates through the reactor 110, and is connected to a rotation driving means such as a motor (not illustrated). Therefore, as the shaft 123 rotates, the susceptor 121 rotates about the rotation center axis A shown in FIG. 1. In addition, the shaft 123 is connected to the lifting drive means for allowing the susceptor 121 to lift. Lifting drive means include, for example, a motor and a gear assembly (not shown). A heater (not shown) is embedded under the susceptor 121 to adjust the temperature of the substrate w.

The gas injection unit 130 is coupled to the upper plate 113 installed above the substrate support unit 120 and includes gas supplies 151, 152, 154, and 155. The gas supplies 151, 152, 154, and 155 are divided into process gas supplies 151 and 152 and purge gas supplies 154 and 155 according to the type of gas to be supplied.

The process gas supplies 151 and 152 may include a source gas supply 151 for supplying a source gas such as a precursor onto the substrate support 120, and a reaction gas for reacting with a central element of the precursor to form a reactant. It may be divided into a reaction gas supplier 152 for supplying a phase. In this case, two or more kinds of source gases may be supplied onto the substrate support unit 120 through one source gas supplier 151.

The purge gas supplies 154 and 155 are disposed between the process gas supplies 151 and 152 to supply the purge gas to the substrate support 120 to purge process gases such as precursors and reaction gases. do. That is, the purge gas supplyers 154 and 155 discharge the unreacted gas remaining in the thin film formation space 140 to the outside of the reactor 110 so that the unreacted gas is not mixed on the substrate support 120. It is a device for supplying gas. In particular, the purge gas supplier denoted by reference numeral 155 is a device for supplying the purge gas such that the unreacted gas is not mixed through the central portion of the substrate support 120.

As described above, when the gas injector 130 is fixed and the substrate supporter 120 is rotatably installed and the substrate supporter 120 rotates relative to the gas injector 130, the substrate supporter 120 is rotated. The substrate w, which is seated on the substrate, sequentially passes below each of the gas supplies 151, 152, and 154. In this case, when the source gas, the reaction gas, and the purge gas are supplied together onto the substrate support unit 120 through each gas supplier 151, 152, and 154, ALD may be realized. The cyclic CVD can be realized by supplying only source gas and reaction gas without supplying purge gas. Therefore, using the thin film deposition apparatus 100 shown in Figure 1, it is possible to implement ALD or cyclic CVD without the operation of the valve.

However, when the thin film is deposited using the thin film deposition apparatus 100, the supply order of the gas supplied to each substrate w is different, and thus the thin films having the same physical properties are deposited on all the substrates w. There is a difficult problem.

For example, when the substrate support part 120 is rotated as shown by the arrow of FIG. 2, the supply order of the gas supplied to the substrate indicated by reference numerals 161 and 163 of FIG. The gas supply order is different. This is illustrated in FIGS. 3 and 4.

FIG. 3 is a diagram illustrating a supply order of gases supplied on a substrate denoted by reference numbers 161 and 163 of FIG. 2, and FIG. 4 is a diagram illustrating a supply order of gases supplied on a substrate denoted by reference numerals 162 and 164 of FIG. 2. The figure shown.

As shown by the arrow of FIG. 2, when the substrate support part 120 is rotated by N (N is a natural number), the substrates indicated by reference numerals 161 and 163 of FIG. 2 have a source gas, a purge gas, a reaction gas, and the like. Gases are supplied in purge gas order. On the contrary, the substrates denoted by reference numerals 162 and 164 of FIG. 2 are supplied with gases in the order of reaction gas, purge gas, source gas and purge gas, as shown in FIG. That is, the source gas is first supplied to some of the substrates 161 and 163 and then the reaction gas is supplied, but the source gas is supplied to the remaining substrates 162 and 164 first.

In the case of the substrates 161 and 163 to which the source gas is supplied first, a thin film is deposited in a manner similar to a general ALD. That is, the source gas is first adsorbed on the substrate one layer, and then the reaction gas is reacted with the adsorbed source gas to deposit a thin film. Since this process is one cycle, when the substrate support 120 is rotated N times, atomic layer deposition of 2N cycles is performed.

However, in the case of the substrates 162 and 164 to which the reaction gas is supplied first, the reaction gas is supplied to the substrates 162 and 164 first, which is slightly different from the general ALD. At this time, if the reaction gas does not react with the substrate, the reaction gas does not chemically adsorb onto the substrate, but merely physical adsorption. Therefore, since the reaction gas is removed by the purge gas, the thin film is not deposited during the first 1/2 cycle. As a result, when the substrate support 120 is rotated N times, the thickness of the thin film deposited on the substrates 162 and 164 to which the reaction gas is first supplied is the thickness of the thin film deposited on the substrates 161 and 163 to which the raw material gas is first supplied. It is thinner than thickness. This difference may not be a big problem when depositing several cycles, but the thickness of the thin film is gradually decreasing, and a thin film having a large deposition thickness per cycle may be a big problem.

When the reaction gas is first supplied to the substrate to react the material forming the substrate with the reaction gas, an unwanted material may be formed between the substrate and the thin film or the substrate may be deteriorated.

The technical problem to be solved by the present invention is a thin film deposition method capable of depositing a uniform thin film on all substrates when the thin film is deposited using a thin film deposition apparatus that deposits a thin film while rotating the gas injection unit and the substrate support unit. To provide.

In order to solve the above technical problem, a preferred embodiment of the thin film deposition method according to the present invention is installed in the reactor, the substrate support is provided with a plurality of substrate seating portion on which the substrate is seated and installed on the substrate support And a source gas supplier for supplying a source gas onto the substrate support, a reaction gas supply for supplying a reaction gas reacting with the source gas onto the substrate support, and a source gas supply and a reaction gas supply between the source gas supply and the source gas supply. A plurality of purge gas supplies for supplying purge gas onto the substrate support, and a gas injector in which the source gas supply, the reaction gas supply, and the purge gas supply are disposed radially, wherein the substrate support and the gas injector are relative to each other. The thin film is increased by using a thin film deposition apparatus that is rotatably installed. Mounting a plurality of substrates on the substrate mounting portion; A pretreatment step of supplying any one of the source gas and the reactant gas onto the substrate support part through the gas injection part while rotating the substrate support part and the gas injection part relative to each other; A main process step of depositing a thin film on the substrate by supplying the source gas and the reactant gas together on the substrate support through the gas injector while rotating the substrate support and the gas injector relatively; And a post-processing step of supplying any one of the source gas and the reactant gas onto the substrate support part through the gas injection part while rotating the substrate support part and the gas injection part relative to each other.

The pretreatment step may include supplying the source gas onto the substrate support through the source gas supplier, and the posttreatment step may include supplying the reaction gas onto the substrate support through the reaction gas supply. .

The pretreatment may include supplying the reaction gas onto the substrate support through the reaction gas supply, and the post-treatment may include supplying the source gas onto the substrate support through the source gas supply. In this case, after the post-treatment step, the reaction gas is supplied onto the substrate support through the reaction gas supply, and the substrate support and the substrate support are configured to pass under the reaction gas supply at least once. The method may further include relatively rotating the gas injection unit.

In the thin film deposition method according to the invention, the gas injector comprises m (m is a natural number) of the source gas supply and m reaction gas supply, the substrate support is 360 ° / m relative to the gas injection With one cycle of relative rotation at the corresponding angle, the pretreatment step rotates the substrate support and gas jet relative to correspond to a + ½ cycle (a is an integer greater than or equal to zero), and the main process step is b +. The substrate support and the gas injector are rotated relative to each other for ½ cycle (b is an integer greater than or equal to 0), and the post-processing step is performed relative to the substrate support and the gas injector to correspond to c + ½ cycle (c is an integer greater than or equal to 0). Can be rotated.

In this case, the plurality of substrates may be symmetrically seated with respect to the center of the substrate support, and the source gas supplier and the reactive gas supplier may be symmetrically disposed with respect to the center of the gas injection unit.

시간(a는 0 이상의 정수) 동안 수행하고, 상기 메인 공정 단계는

시간(b는 0 이상의 정수) 동안 수행하며, 상기 후처리 단계는

시간(c는 0 이상의 정수) 동안 수행할 수 있다.In the thin film deposition method according to the present invention, the gas injector comprises m (m is a natural number) of the source gas supply and the m reaction gas supply, the substrate support portion to rotate relative to the gas injection unit When the time required is t, the pretreatment step

Time (a is an integer greater than or equal to 0) and the main process step

Time (b is an integer greater than or equal to 0), and the post-processing step

C may be performed for a time equal to or greater than zero.

Another preferred embodiment of the thin film deposition method according to the present invention for solving the above technical problem is installed on the substrate support and the substrate support is provided inside the reactor, the substrate support is provided with a plurality of substrate seating portion is seated And a gas injector in which n (n is a natural water of 3 or more), a process gas supplier for supplying various kinds of process gases, and a gas injector in which a purge gas supplier disposed between each of the process gas suppliers is radially disposed. The n-th process gas supplier is sequentially disposed along the circumferential direction of the gas injector, and deposits a thin film using a thin film deposition apparatus in which the substrate support and the gas injector are rotatably installed. Mounting a plurality of substrates on the substrate; Relatively rotating the substrate support and the gas injector such that the substrate sequentially passes below the nth process gas supplier from the first process gas supplier; While sequentially rotating the substrate support and the gas injector, the gas supply step of step n-1 is sequentially performed, wherein p (p is 1 to n-1) th gas supply step of the gas supply step is performed through the first process gas. A pretreatment step of supplying a p-th process gas onto the substrate support; A main process step of depositing a thin film on the substrate by supplying all the process gases together on the substrate support while rotating the substrate support and the gas injector relatively; And sequentially rotating the substrate support and the gas injection unit, sequentially performing a gas supply step of n-1, wherein q (q is 1 to n-1) -th gas supply step of the gas supply step is q + 1. And a post-treatment step of supplying a process gas to an n-th process gas on the substrate support.

In the thin film deposition method according to the invention, the gas injection unit is provided with each of the process gas supply m (m is one or more natural water), the substrate support is an angle corresponding to 360 ° / m with respect to the gas injection unit With each cycle of relative rotation as a cycle, each gas supply step of the pretreatment step rotates the substrate support and the gas injector so as to correspond to 1 / n cycles, and the main process step includes a + 1 / n cycle ( a is an integer greater than or equal to 0) relative to the substrate support and the gas injection unit, and the post-processing step can be rotated relative to the substrate support and the gas injection unit to correspond to 1 / n cycles.

시간 동안 수행하고, 상기 메인 공정 단계는

시간(a는 0 이상의 정수) 동안 수행하며, 상기 후처리 단계는

시간 동안 수행할 수 있다.In the thin film deposition method according to the present invention, the gas injection unit is provided with each of the process gas supply m (m is one or more natural water), which is required when the substrate support portion rotates relative to the gas injection unit When the time is t, each gas supply step of the pretreatment step

Time, and the main process step

For a time (a is an integer greater than or equal to 0), the post-treatment step

Can be done for hours.

In this case, the gas injector includes a first process gas supplier, a second process gas supplier and a third process gas supplier for depositing a ternary thin film, and the pretreatment step supplies the first process gas for t / 3 hours. A first gas supply step and a second gas supply step of supplying the first process gas and the second process gas together for t / 3 hours are sequentially performed, and the main process step is (a + d) x t time. The first process gas, the second process gas and the third process gas is supplied together, the post-treatment step is a first gas supply step of supplying the second process gas and the third process gas together for t / 3 hours And a second gas supply step of supplying a third process gas for t / 3 hours may be performed sequentially.

According to the present invention, by introducing the pre-treatment step and the post-treatment step of supplying only one of the source gas and the reactive gas before and after the main process, the gas supply order to all the substrates becomes the same, so that a uniform thin film is applied to all the substrates. It is possible to deposit. In addition, when the gas is sequentially supplied through a plurality of steps in the pretreatment step and the post-treatment step, even when a thin film of ternary system or more is formed, the supply order of the gases supplied to all the substrates can be the same.

Hereinafter, with reference to the accompanying drawings will be described in detail a preferred embodiment of a thin film deposition method according to the present invention. However, the present invention is not limited to the embodiments disclosed below, but will be implemented in various forms, and only the present embodiments are intended to complete the disclosure of the present invention and to those skilled in the art to fully understand the scope of the invention. It is provided to inform you.

5 is a flowchart illustrating a process of performing an embodiment of a thin film deposition method according to the present invention. In the present embodiment will be described using the thin film deposition apparatus 100 shown in Figs.

However, the thin film deposition method according to the present invention is not limited to the thin film deposition apparatus 100 illustrated in FIGS. 1 and 2, and other thin film deposition apparatuses may be used as long as the substrate support unit and the gas injector are rotatably installed. have. At this time, the substrate support is provided in the reactor and a plurality of substrate seats on which the substrate is mounted is provided. The gas injector includes a source gas supplier, a reaction gas supplier, and a purge gas supplier disposed radially. The source gas supplier is a gas supply device for supplying source gas onto the substrate support, and the reaction gas supply device is a gas supply device for supplying reaction gas reacting with the source gas onto the substrate support. The purge gas supplier is a gas supply device that supplies a purge gas for purging the source gas and the reaction gas onto the substrate support, and is disposed between the source gas supply and the reaction gas supply. Preferably, the gas injectors are provided with the same number of source gas supplies and the reactive gas supplies, and the source gas supplies and the reactive gas supplies are symmetrically arranged with respect to the center of the gas injectors, respectively. Placed at equal intervals. And the substrate mounting portion is preferably formed symmetrically with respect to the center of the substrate support.

In this embodiment, the source gas supply and the reaction gas supply do not mean only a unit unit for supplying each gas. That is, in the case of the source gas supplier, even if a plurality of unit units for supplying the source gas are arranged in succession or a purge gas supplier is disposed between the unit units for supplying the source gas, the source gas supply is considered to be one source gas. Defined as a feeder. The same applies to the reactive gas supplier. After all, when the source gas supply and the reaction gas supply are not alternately arranged, each source gas supply and the reaction gas supply are one.

For example, it is assumed that the source gas is supplied from the upper gas supplier of the gas supplier indicated by reference numeral 152 of FIG. 2, and the reactant gas is supplied from the gas supplier on both the lower gas supplier and the lower gas supplier. And it is assumed that the purge gas is supplied from the remaining gas supply. In this case, since there is only one unit unit for supplying the source gas, not only one source gas supplier is provided, but also three unit units for supplying the reaction gas, but raw materials are supplied between the unit units for supplying the reaction gas. Since the gas supplier is not arranged, when three unit units for supplying the reaction gas are arranged in succession, the gas injection unit 130 is regarded as having one reaction gas supplier.

Referring to FIG. 5 together with FIGS. 1 and 2, in the thin film deposition method according to the present invention, first, a plurality of substrates are mounted on the substrate seating part 122 (S510). In this case, the substrate to be seated is symmetrical with respect to the center of the substrate supporter 120.

Next, while pre-rotating the substrate support 120 and the gas injector 130, the pretreatment step of supplying any one of the source gas and the reactive gas to the substrate support 120 is performed through the gas injector 130. (S520). Then, while relatively rotating the substrate support unit 120 and the gas injection unit 130, the main gas for supplying the source gas and the reaction gas together on the substrate support unit 120 through the gas injection unit 130 to deposit a thin film on the substrate Perform the process (S530). After the substrate support part 120 and the gas injector 130 are rotated relative to each other, a post-processing step of supplying one of the source gas and the reactive gas to the substrate support part 120 is performed through the gas injector 130. (S540).

In the thin film deposition method according to the present invention, the gas supplied to all the substrates seated on the substrate seating part 122 has the same gas supply order through the pretreatment step S520 and the post-treatment step S540. To this end, the pretreatment step (S520) supplies only the raw material gas onto the substrate support unit 120 through the source gas supplier 151, and the post-treatment step (S540) supports only the reactive gas through the reaction gas supplier 152. May be fed onto 120. As described above, a preferred embodiment of supplying only the source gas in the pretreatment step S520 and supplying only the reaction gas in the post-treatment step S540 is illustrated in FIG. 6.

In FIG. 6, a case in which the substrate supporter 120 sequentially passes below the source gas supplier 151, the purge gas supplier 154, the reaction gas supplier 152, and the purge gas supplier 154 corresponds to one cycle. . That is, when the source gas supplier 151 and the reactive gas supplier 152 are symmetrically arranged with each m (m is a natural number), one cycle indicates that the substrate support 120 rotates at an angle corresponding to 360 ° / m. it means. For example, as shown in FIG. 2, when the gas injector 130 includes two source gas supplies 151 and two reaction gas supplies 152, the substrate support 120 rotates 180 ° in one cycle. I mean.

시간 동안 수행한다. 여기서, t는 기판 지지부(120)가 가스 분사부(130)에 대해 한 바퀴 상대 회전할 때 소요되는 시간이다.

시간 동안 기판 지지부(120)와 가스 분사부(130)를 상대 회전시키면, a+1/2 사이클에 해당하는 만큼 기판 지지부(120)와 가스 분사부(130)가 상대 회전하게 된다.Referring to FIG. 6, first, a plurality of substrates are seated on the substrate seating portion 122 similarly to the step S510 (S610). Substantially rotating the substrate support 120 and the gas injector 130 so as to correspond to a + 1/2 cycle (a is an integer greater than or equal to 0), only the source gas is supplied to the substrate support 120 through the source gas supplier 151. Supply to the phase to perform a pretreatment step (S620). Preprocessing step (S620)

Perform for hours. Here, t is a time required when the substrate support part 120 rotates relative to the gas injection part 130.

When the substrate support 120 and the gas injector 130 rotate relative to each other, the substrate support 120 and the gas injector 130 rotate relative to each other by a + 1/2 cycles.

For example, as shown in FIG. 2, when two source gas supplies 151 and two reaction gas supplies 152 are provided, the pretreatment step S620 may supply only the source gas through the source gas supplier 151. , t / 4 hours (where a is 0). When the pretreatment step S620 is performed as described above, the substrate support part 120 is rotated relative to the gas injector 130 by 90 ° so that only the raw material gas is supplied for one half cycle.

시간 동안 수행한다.

시간 동안 기판 지지부(120)와 가스 분사부(130)를 상대 회전시키면, b+1/2 사이클에 해당하는 만큼 기판 지지부(120)와 가스 분사부(130)가 상대 회전하게 된다.Next, the source gas supply unit 151 and the reaction gas supply unit 152 are rotated while the substrate support unit 120 and the gas injection unit 130 rotate relative to each other to correspond to b + 1/2 cycle (b is an integer greater than or equal to 0). The raw material gas and the reactive gas are supplied together onto the substrate support 120 to perform a main process (S630). The main process (S630)

Perform for hours.

When the substrate support 120 and the gas injector 130 rotate relative to each other, the substrate support 120 and the gas injector 130 rotate relative to each other by b + 1/2 cycles.

For example, as shown in FIG. 2, when the source gas supplier 151 and the reactive gas supplier 152 are provided as two, respectively, the main process S630 may include the source gas supplier 151 and the reactive gas supplier ( While supplying the source gas and the reaction gas together through 152), it is carried out for (N + 1/4) × t time. Where N is b / 2. When the main process (S630) is performed as described above, the substrate support part 120 rotates relative to the gas injector 130 by N wheels, and further rotates by 90 ° further, and the raw material gas during the 2N + 1/2 cycle. The reaction gas is supplied and a thin film is deposited. At this time, when the purge gas is supplied together, the thin film is deposited by ALD. When the purge gas is not supplied, the thin film is deposited by cyclic CVD.

시간 동안 수행한다.

시간 동안 기판 지지부(120)와 가스 분사부(130)를 상대 회전시키면, c+1/2 사이클에 해당하는 만큼 기판 지지부(120)와 가스 분사부(130)가 상대 회전하게 된다.Next, while rotating the substrate support 120 and the gas injection unit 130 to correspond to c + 1/2 cycle (c is an integer greater than or equal to 0), only the reaction gas through the reaction gas supply 152 to the substrate support ( 120) the post-treatment step is performed by supplying the phase (S640). Post-processing step (S640)

Perform for hours.

When the substrate support 120 and the gas injector 130 rotate relative to each other, the substrate support 120 and the gas injector 130 rotate relative to each other by c + 1/2 cycles.

For example, as shown in FIG. 2, when the source gas supplier 151 and the reaction gas supplier 152 are each provided with two, the post-treatment step S640 may supply only the reaction gas through the reaction gas supplier 152. While running for t / 4 hours, where c is zero. When the post-processing step (S640) is performed as described above, the substrate support part 120 is rotated relative to the gas injector 130 by 90 °, so that only the reaction gas is supplied for 1/2 cycle.

In this manner, when the pretreatment step S620 and the post-treatment step S640 are performed before and after the main process S630, the gas is supplied to all the substrates in the same order, thereby making the physical properties of the thin film deposited on the substrate uniform.

As shown in FIG. 2, when the source gas supplier 151 and the reaction gas supplier 152 are each provided with two, that is, when m = 2, the substrate support 120 in the direction indicated by the arrow of FIG. 2. When the thin film is deposited by the method shown in FIG. 6 while rotating, the supply sequence of the gas supplied on the substrate is shown in FIGS. 7 and 8.

FIG. 7 is a diagram illustrating a supply order of gases supplied on a substrate denoted by reference numbers 161 and 163 of FIG. 2, and FIG. 8 is a diagram illustrating a supply order of gases supplied on a substrate denoted by reference numerals 162 and 164 of FIG. 2. The figure shown. In all the steps (S620, S630, S640), the purge gas was continuously supplied. In addition, the pretreatment step S620 and the post-treatment step S640 were performed for t / 4 hours to rotate the substrate support 120 by 1/2 cycle, that is, 90 °. The main process (S630) was performed for (N + 1/4) × t time to rotate the substrate support part 120 by N turns, and then rotated an additional 90 °. That is, the substrate support part 120 was rotated to correspond to 2N + 1/2 cycles. For convenience of description, the substrate indicated by reference numeral 161 of FIG. 2 is a first substrate, the substrate indicated by reference numeral 162 is a second substrate, the substrate indicated by reference numeral 163 is a third substrate, and the substrate indicated by reference numeral 164 is a fourth substrate. It is called.

First, the gas supply order supplied to the first substrate 161 will be described.

The first substrate 161 sequentially descends the source gas supplier 151 and the purge gas supplier 154 while the substrate support 120 is rotated 1/2 cycle in the pretreatment step S620, that is, t / 4 hours. You will pass by. While the first substrate 161 sequentially passes below the source gas supplier 151 and the purge gas supplier 154, the source substrate and the purge gas are sequentially disposed on the first substrate 161 as shown in FIG. 7. Supplied by. When the preprocessing step S620 is completed, the first substrate 161 reaches the position indicated by 162 of FIG. 2.

Next, while rotating the substrate support part 120, the main gas (S630) is performed by supplying the source gas and the reaction gas together for (N + 1/4) × t time. As such, when the main process S630 is performed, the first substrate 161 sequentially moves down the reaction gas supplier 152, the purge gas supplier 154, the source gas supplier 151, and the purge gas supplier 154. You will pass by. Therefore, as shown in FIG. 7, the first substrate 161 is sequentially supplied with a reaction gas, purge gas, source gas, and purge gas. While the main process S630 is performed, the substrate support 120 is rotated N times, and further rotates an additional 1/2 cycle, so that the reaction gas and the purge gas are shown in FIG. 7 during an additional 1/2 cycle. Are sequentially supplied to the first substrate 161. When the main process S630 is completed, the first substrate 161 reaches the position indicated by 163 of FIG. 2.

Next, the post-treatment step S640 for supplying only the reaction gas is performed for 1/2 cycle, that is, t / 4 hours. At this time, the first substrate 161 passes under the source gas supplier 151, but since the source gas is not supplied, as shown in FIG. 7, only the first purge gas is used during the post-treatment step S640. It is supplied on the substrate 161.

The time required to perform all three steps (S620, S630, S640) is (N + 3/4) × t, where the substrate support 120 corresponds to 2N + 1 + 1/2 cycles. The angle, that is, N × 360 ° + 270 ° rotation. Through such a process, a thin film having a thickness corresponding to 2N + 1 cycles is deposited on the first substrate 161, and is supplied from the source gas onto the first substrate 161, and finally, if the purge gas is not considered, the reaction gas is finally formed. Is supplied. The purge gas is not involved in the reaction and does not affect the properties of the deposited thin film.

Gas is supplied to the third substrate 163 in the same order as the first substrate 161.

The gas supply sequence supplied to the second substrate 162 is described.

The second substrate 162 sequentially moves down the reaction gas supplier 152 and the purge gas supplier 154 while the substrate support 120 rotates 1/2 cycle in the pretreatment step S620, that is, t / 4 hours. You will pass by. However, since only the raw material gas is supplied in the pretreatment step S620, only the purge gas is supplied to the second substrate 162 as shown in FIG. 8. When the preprocessing step S620 is completed, the second substrate 162 reaches the position indicated by 163 of FIG. 2.

Next, while rotating the substrate support part 120, the main gas (S630) is performed by supplying the source gas and the reaction gas together for (N + 1/4) × t time. As described above, when the main process S630 is performed, the second substrate 162 sequentially moves down the source gas supplier 151, the purge gas supplier 154, the reaction gas supplier 152, and the purge gas supplier 154. Passed by. Therefore, as shown in FIG. 8, the second substrate 162 is sequentially supplied with source gas, purge gas, reaction gas, and purge gas. While the main process S630 is performed, the substrate support 120 is rotated N times, and further rotates an additional 1/2 cycle, so that the source gas and the purge gas are as shown in FIG. 8 during the additional 1/2 cycle. Is sequentially supplied to the second substrate 162. When the main process S630 is completed, the second substrate 162 reaches the position indicated by 164 of FIG. 2.

Next, the post-treatment step S640 for supplying only the reaction gas is performed for 1/2 cycle, that is, t / 4 hours. At this time, since the second substrate 162 sequentially passes below the reaction gas supplier 152 and the purge gas supplier 154, as shown in FIG. 8, during the post-processing step (S640), the second substrate ( Reaction gas and purge gas are sequentially supplied to 162.

The time required to perform all three steps (S620, S630, S640) is (N + 3/4) × t, where the substrate support 120 corresponds to 2N + 1 + 1/2 cycles. The angle, that is, N × 360 ° + 270 ° rotation. Through this process, the raw material gas is supplied from the source gas onto the second substrate 162, and the reaction gas is supplied at the end unless the purge gas is considered. The purge gas is not involved in the reaction and does not affect the properties of the deposited thin film.

The fourth substrate 164 is supplied with gas in the same order as the second substrate 162.

As a result, when comparing FIG. 7 and FIG. 8, it turns out that the order in which purge gas is supplied differs slightly, but the order in which source gas and reaction gas are supplied is the same. Since the purge gas does not participate in the reaction and does not affect the physical properties of the deposited thin film, four substrates 161, 162, 163, and 164 are supplied with the same order and the same number of source gases and the reaction gas. Therefore, by depositing a thin film by the method of the present embodiment, it is possible to deposit a uniform thin film on the four substrates (161, 162, 163, 164).

In addition, a preferred embodiment in the case of supplying only the reaction gas in the pretreatment step S520 and only the source gas in the post-treatment step S540 is illustrated in FIG. 9.

시간 동안 수행한다. 여기서, t는 기판 지지부(120)가 가스 분사부(130)에 대해 한 바퀴 상대 회전할 때 소요되는 시간이다.

시간 동안 기판 지지부(120)와 가스 분사부(130)를 상대 회전시키면, a+1/2 사이클에 해당하는 만큼 기판 지지부(120)와 가스 분사부(130)가 상대 회전하게 된다.Referring to FIG. 9, first, a plurality of substrates are mounted on the substrate seating portion 122 similarly to the step S510 (S910). Substantially rotating the substrate support 120 and the gas injector 130 to correspond to a + 1/2 cycle (a is an integer greater than or equal to 0), and only the reaction gas is supplied through the reaction gas supplier 152 to support the substrate 120. Supplying to the phase to perform a pretreatment step (S920). Preprocessing step (S920)

Perform for hours. Here, t is a time required when the substrate support part 120 rotates relative to the gas injection part 130.

When the substrate support 120 and the gas injector 130 rotate relative to each other, the substrate support 120 and the gas injector 130 rotate relative to each other by a + 1/2 cycles.

For example, as shown in FIG. 2, when the source gas supplier 151 and the reaction gas supplier 152 are each provided with two, the pretreatment step S920 may supply only the reaction gas through the reaction gas supplier 1512. t / 4 hours, where a is 0. When the pretreatment step S920 is performed as described above, the substrate support 120 is rotated relative to the gas injector 130 by 90 °, and the cycle is 1/2 cycle. While only the reaction gas is supplied.

시간 동안 수행한다.

시간 동안 기판 지지부(120)와 가스 분사부(130)를 상대 회전시키면, b+1/2 사이클에 해당하는 만큼 기판 지지부(120)와 가스 분사부(130)가 상대 회전하게 된다.Next, the source gas supply unit 151 and the reaction gas supply unit 152 are rotated while the substrate support unit 120 and the gas injection unit 130 rotate relative to each other to correspond to b + 1/2 cycle (b is an integer greater than or equal to 0). The main gas is supplied through the raw material gas and the reactive gas onto the substrate supporter 120 at step S930. The main process (S930)

Perform for hours.

When the substrate support 120 and the gas injector 130 rotate relative to each other, the substrate support 120 and the gas injector 130 rotate relative to each other by b + 1/2 cycles.

For example, as shown in FIG. 2, when the source gas supplier 151 and the reactive gas supplier 152 are provided as two, respectively, the main process S930 may include the source gas supplier 151 and the reactive gas supplier. While supplying the source gas and the reaction gas together at 152, the process is performed for (N + 1/4) × t time. Where N is b / 2. When the main process (S930) is performed as described above, the substrate support part 120 rotates relative to the gas injector 130 by N wheels, and further rotates by 90 ° further, and the raw material gas during 2N + 1/2 cycles. The reaction gas is supplied and a thin film is deposited. At this time, when the purge gas is supplied together, the thin film is deposited by ALD. When the purge gas is not supplied, the thin film is deposited by cyclic CVD.

시간 동안 수행한다.

시간 동안 기판 지지부(120)와 가스 분사부(130)를 상대 회전시키면, c+1/2 사이클에 해당하는 만큼 기판 지지부(120)와 가스 분사부(130)가 상대 회전하게 된다.Next, while rotating the substrate support 120 and the gas injector 130 to correspond to c + 1/2 cycle (c is an integer greater than or equal to 0), only the source gas through the source gas supply 151, the substrate support ( 120) the post-treatment step is performed by supplying the phase (S940). Post-processing step (S640)

Perform for hours.

When the substrate support 120 and the gas injector 130 rotate relative to each other, the substrate support 120 and the gas injector 130 rotate relative to each other by c + 1/2 cycles.

For example, as shown in FIG. 2, when the source gas supplier 151 and the reaction gas supplier 152 are each provided with two, the post-treatment step S940 may supply only the reaction gas through the source gas supplier 151. While running for t / 4 hours, where c is zero. When the post-treatment step S940 is performed as described above, the substrate support part 120 is rotated relative to the gas injector 130 by 90 °, so that only the raw material gas is supplied for 1/2 cycle.

Next, while rotating the substrate support 120 for at least t / m time corresponding to one cycle, only the reaction gas is supplied onto the substrate support 120 through the reaction gas supplier 152 (S950). This is to complete the reaction since the raw material gas is adsorbed on the thin film after completing the post-treatment step S940. For example, as shown in FIG. 2, when the source gas supplier 151 and the reaction gas supplier 152 are each provided with two, the step S950 may supply only the reaction gas through the reaction gas supplier 151 and t / By performing for 2 hours, the substrate support 120 may be rotated 180 °. Step S950 is an optional step.

In this manner, when the pre-treatment step S920 and the post-treatment step S940 are performed before and after the main process S930, the gas is supplied to all the substrates in the same order to uniform the physical properties of the thin film deposited on the substrate.

As shown in FIG. 2, when the source gas supplier 151 and the reaction gas supplier 152 are each provided with two, that is, m = 2, the substrate support 120 in the direction indicated by the arrow of FIG. 2. When the thin film is deposited by the method shown in FIG. 9 while rotating, the supply sequence of the gas supplied on the substrate is shown in FIGS. 10 and 11.

FIG. 10 is a diagram illustrating a supply sequence of gases supplied to the first substrate 161 and the third substrate 163. FIG. 11 is a diagram illustrating a supply sequence of the second substrate 162 and the fourth substrate 164 of FIG. 2. It is a figure which shows the supply sequence of gas. In all the steps S920, S930, S940 and S950, purge gas was continuously supplied. In addition, the pretreatment step S620 and the post-treatment step S640 were performed for t / 4 hours to rotate the substrate support 120 by 1/2 cycle, that is, 90 °. The main process (S630) was performed for (N + 1/4) × t time to rotate the substrate support part 120 by N turns, and then rotated an additional 90 °. That is, the substrate support 120 is rotated to correspond to 2N + 1/2 cycle. In operation S950, the substrate support part 120 is rotated one cycle, that is, 180 ° by performing t / 2 hours.

First, the gas supply order supplied to the first substrate 161 will be described.

The first substrate 161 sequentially descends the source gas supplier 151 and the purge gas supplier 154 while the substrate support 120 is rotated 1/2 cycle in the pretreatment step S920, that is, t / 4 hours. You will pass by. However, since only the reaction gas is supplied in the pretreatment step S920, only the purge gas is supplied to the first substrate 161 as shown in FIG. 10. When the preprocessing step S920 is completed, the first substrate 161 reaches the position indicated by 162 of FIG. 2.

Next, while rotating the substrate support 120, the main gas (S930) is performed by supplying the source gas and the reaction gas together for (N + 1/4) × t time. As described above, when the main process S930 is performed, the first substrate 161 sequentially moves down the reaction gas supplier 152, the purge gas supplier 154, the source gas supplier 151, and the purge gas supplier 154. Passed by. Accordingly, as shown in FIG. 10, the reaction gas, the purge gas, the source gas, and the purge gas are sequentially supplied to the first substrate 161. At this time, since the substrate support 120 is rotated N times, and further rotates 1/2 cycle, the first substrate 161 is sequentially reacted with the purge gas as shown in FIG. 10 during the additional 1/2 cycle. Supplied to. When the main process S930 is completed, the first substrate 161 reaches the position indicated by 163 of FIG. 2.

Next, the post-treatment step S940 for supplying only the raw material gas is performed for 1/2 cycle, that is, t / 4 hours. At this time, since the first substrate 161 sequentially passes below the source gas supplier 151 and the purge gas supplier 154, as shown in FIG. 10, during the post-processing step S940, the first substrate ( Source gas and purge gas are sequentially supplied to 161. When the post-processing step S940 is completed, the first substrate 161 reaches the position indicated by 164 of FIG. 2.

In addition, when only the reaction gas is supplied through the reaction gas supplier and the step S950 is performed for t / 2 hours, the substrate support unit 120 rotates one cycle. As described above, when the operation S950 is performed, as illustrated in FIG. 10, the reaction gas and the purge gas are sequentially supplied to the first substrate 161.

The time required to perform all four steps (S920, S930, S940, S950) is (N + 5/4) × t, and at this time, the substrate support 120 is placed in 2N + 2 + 1/2 cycles. The corresponding angle, that is, (N + 1) × 360 ° + 90 ° will be rotated. Through this process, a thin film having a thickness corresponding to 2N + 1 cycles is deposited on the first substrate 161. The reaction gas is supplied from the reaction gas onto the first substrate 161, and the reaction gas is supplied at the end if the purge gas is not considered. The purge gas is not involved in the reaction and does not affect the properties of the deposited thin film.

Gas is supplied to the third substrate 163 in the same order as the first substrate 161.

In addition, the gas supply sequence supplied to the second substrate 162 will be described.

The second substrate 162 sequentially moves down the reaction gas supplier 152 and the purge gas supplier 154 while the substrate support 120 rotates 1/2 cycle in the pretreatment step S920, that is, t / 4 hours. You will pass by. Therefore, as shown in FIG. 11, the reaction gas and the purge gas are sequentially supplied to the second substrate 162. When the preprocessing step S920 is completed, the second substrate 162 reaches the position indicated by 163 of FIG. 2.

Next, while rotating the substrate support 120, the main gas (S930) is performed by supplying the source gas and the reaction gas together for (N + 1/4) × t time. As such, when the main process S930 is performed, the second substrate 162 sequentially moves down the source gas supplier 151, the purge gas supplier 154, the reaction gas supplier 152, and the purge gas supplier 154. Passed by. Therefore, as shown in FIG. 11, the source substrate, the purge gas, the reaction gas, and the purge gas are sequentially supplied to the second substrate 162. At this time, since the substrate support 120 is rotated N times, and further rotates 1/2 cycle, as shown in FIG. 11 during the additional 1/2 cycle, the source substrate and the purge gas sequentially rotate the second substrate 162. Supplied to. When the main process S930 is completed, the second substrate 162 reaches the position indicated by 164 of FIG. 2.

Next, the post-treatment step S940 for supplying only the raw material gas is performed for 1/2 cycle, that is, t / 4 hours. In this case, the second substrate 162 sequentially passes below the reaction gas supplier 152 and the purge gas supplier 154. However, since only the raw material gas is supplied to the post-treatment step S940, as shown in FIG. 11, only the purge gas is supplied to the second substrate 162 during the post-treatment step S940. When the post-processing step S940 is completed, the second substrate 162 reaches the position indicated by 161 of FIG. 2.

In addition, when only the reaction gas is supplied through the reaction gas supplier and the step S950 is performed for t / 2 hours, the substrate support unit 120 rotates one cycle. As described above, when the operation S950 is performed, as shown in FIG. 11, the purge gas, the reaction gas, and the purge gas are sequentially supplied to the second substrate 162.

The time required to perform all four steps (S920, S930, S940, S950) is (N + 5/4) × t, and at this time, the substrate support 120 is placed in 2N + 2 + 1/2 cycles. The corresponding angle, that is, (N + 1) × 360 ° + 90 ° will be rotated. Through this process, a thin film having a thickness corresponding to 2N + 1 cycles is deposited on the second substrate 162. The second substrate 161 is supplied from the reaction gas, and if the purge gas is not considered, the reaction gas is also supplied at the end. The purge gas is not involved in the reaction and does not affect the properties of the deposited thin film.

The fourth substrate 164 is supplied with gas in the same order as the second substrate 162.

As a result, when comparing FIG. 10 and FIG. 11, although the order in which purge gas is supplied differs slightly, it turns out that the order in which source gas and reaction gas are supplied is the same. Since the purge gas does not participate in the reaction and does not affect the physical properties of the deposited thin film, four substrates 161, 162, 163, and 164 are supplied with the same order and the same number of source gases and the reaction gas. Therefore, by depositing a thin film by the method of the present embodiment, it is possible to deposit a uniform thin film on the four substrates (161, 162, 163, 164). And even if the step S950 is not performed, since the supply order of the gases supplied to the four substrates 161, 162, 163, and 164 is the same, a uniform thin film may be deposited.

In the above, the method for depositing a thin film by using a thin film deposition apparatus in which the process gas supplier is divided into two types, a raw material gas supplier and a reactive gas supplier, has been described. However, in the case of a method of depositing a thin film using a thin film deposition apparatus in which a process gas supplier is divided into three or more types, a uniform thin film may be deposited on all substrates through a more complicated process. Hereinafter, a method of depositing a thin film using a thin film deposition apparatus having a process gas supplier divided into three or more types will be described.

12 is a flowchart illustrating a process of performing another preferred embodiment of the thin film deposition method according to the present invention, which shows a method of depositing a thin film using a thin film deposition apparatus in which a process gas supplier is divided into three or more types.

In the present embodiment will be described using the thin film deposition apparatus 100 shown in FIG.

However, the thin film deposition method according to the present invention is not limited to the thin film deposition apparatus 100 shown in FIG. 1, and other thin film deposition apparatuses may be used as long as the substrate deposition unit and the gas injection unit are rotatably installed. At this time, the substrate support is provided in the reactor and a plurality of substrate seats on which the substrate is mounted is provided. The gas injection unit includes a process gas supply and a purge gas supply for supplying n kinds of process gases (n is a natural water of 3 or more), and the process gas supply and the purge gas supply are disposed radially. The process gas supplier is a gas supply device for supplying a process gas to be supplied onto the substrate support, and is classified into a n-th process gas supplier from the first process gas supplier according to the type of process gas, and the n-th process from the first process gas supplier. The gas supplies are arranged sequentially along the circumferential direction of the gas injector. Preferably, the gas injectors are provided with the nth process gas supplies from the same number of first process gas supplies, and each process gas supply is symmetrically disposed with respect to the center of the gas injectors. For example, the gas injection unit may include one n-th process gas supplier from the first process gas supplier, and each process gas supplier may be disposed at an angle of 360 ° / n along the circumferential direction of the gas injection unit. As another example, the gas injector may include two n-th process gas supplies from the first process gas supplier, and each process gas supplier may be disposed at an angle of 360 ° / 2n along the circumferential direction of the gas injector. have. The purge gas supplier is a gas supply device that supplies a purge gas for purging the process gas onto the substrate support, and is disposed between the process gas supplies. The substrate seating portion is preferably formed symmetrically with respect to the center of the substrate support portion.

The process gas supplier in the present embodiment also does not mean only a unit unit for supplying each process gas, similar to the above-described source gas supply and reaction gas supply, and a plurality of unit units for supplying process gas are arranged in succession, Even when a purge gas supplier is disposed between unit units for supplying a process gas, it is defined as one process gas supplier as one group. The same applies to the reactive gas supplier. After all, if different process gas suppliers are not disposed between, even if a plurality of process gas supplies for supplying one kind of process gas are arranged, the process gas supply is considered to be one.

Even in the present embodiment, the thin film deposition apparatus 100 may be applied when the gas injector 130 as shown in FIG. 2 is provided. However, the gas injector 130 may be more suitable for describing the present embodiment. An example of) is shown in FIG. 13.

The gas injector 130 illustrated in FIG. 13 includes twelve gas supplies 151a to 151l. Each gas supplier 151a to 151l is symmetrically disposed with respect to the center of the gas injector as shown in FIG. 13, and each gas supplier 151a to 151l is disposed along the circumferential direction of the gas injector 130. Can be arranged at intervals of °.

In order to supply three process gases in order to deposit the ternary thin film using the gas injection unit 130, each gas supplier 151a to 151l may be a first process gas supplier or a second process gas supplier. It may be classified into a third process gas supplier and a purge gas supplier. In this case, the gas injection unit 130 may include one first process gas supplier, a second process gas supplier, and a third process gas supplier. For example, the gas supplier indicated by reference numeral 157a may be a first process gas supplier, the gas supplier indicated by reference numeral 157e may be a second process gas supplier, and the gas supplier indicated by reference numeral 157i may be a third process gas supplier. The remaining gas supplies 157b, 157c, 157d, 157f, 157g, 157h, 157j, 157k, and 157l may be purge gas supplies. The case where the gas injection unit 130 is configured as described above is referred to as case 1 for convenience of description.

As another example, the gas injection unit 130 may include two first process gas suppliers, a second process gas supplier, and a third process gas supplier. For example, two process gas supplies indicated by reference numerals 157a and 157g are first process gas supplies, and two process gas supplies indicated by reference numerals 157c and 157i are second process gas supplies and 2 denoted by reference numerals 157e and 157k. Two process gas suppliers may be a third process gas supplier. The remaining gas supplies 157b, 157d, 157f, 157h, 157j, and 157l may be purge gas supplies. When the gas supplier is disposed as described above, a purge gas supplier is disposed between each process gas supplier, and the first process gas supplier, the second process gas supplier, and the third process gas supplier are arranged along the circumferential direction of the gas injector 130. It will be arranged sequentially. The case where the gas injection unit 130 is configured as described above is referred to as case 2 for convenience of description.

In addition, in order to supply four process gases in order to deposit the ternary thin film using the gas injector 130, each gas supplier 151a to 151l may include a first process gas supplier, a second process gas supplier, The third process gas supplier, the fourth process gas supplier and may be divided into a purge gas supplier. In this case, the gas injection unit 130 may include one first process gas supplier, a second process gas supplier, a third process gas supplier, and a fourth process gas supplier. For example, the gas supplier indicated by reference numeral 157a is the first process gas supplier, the gas supplier indicated by reference numeral 157d is the second process gas supplier, the gas supplier indicated by reference numeral 157g is the third process gas supplier, and 157j The gas supplier indicated by may be a fourth process gas supplier. The remaining gas supplies 157b, 157c, 157e, 157f, 157h, 157i, 157k, and 157l may be purge gas supplies. The case where the gas injection unit 130 is configured as described above is referred to as case 3 for convenience of description.

Referring to FIG. 12 together with FIGS. 1 and 13, in the thin film deposition method according to the present invention, first, a plurality of substrates are mounted on the substrate seating part 122 (S1210). In this case, the substrate to be seated is symmetrical with respect to the center of the substrate supporter 120.

Next, the substrate support part 120 and the gas injection part 130 are rotated relative to each other (S1220). In this case, the substrate support part 120 and the gas injection part 130 are rotated relative to each other so that the substrate seated on the substrate seating part 122 sequentially passes below the nth process gas supplier from the first process gas supplier.

Next, a pretreatment step is performed (S1230). The pretreatment step S1230 includes a gas supply step of n-1 steps. The p (p is 1 to n−1) th gas supply step of the gas supply step of the pretreatment step S1230 may supply the first to pth process gases onto the substrate support 120. That is, the first gas supply step, the first gas supply step, supplies only the first process gas, and the second gas supply step, the second gas supply step, supplies the first process gas and the second process gas together. When the gas supply step is performed once in this manner, the next gas supply step supplies one more process gas. The n-th gas supplying step, which is the last gas supplying step, supplies the first to n-th process gases together.

When performing each gas supply step of the pretreatment step (S1230), the time required and the degree of relative rotation of the substrate support unit 120 and the gas injection unit 130 are as follows. Prior to this, the cycle in the present embodiment is defined. In this embodiment, one cycle includes the substrate support 120 and the gas injector 130 being rotated relative to each other so that the substrate seated on the substrate seat 122 is lowered from the nth process gas supplier from the first process gas supplier. It means to pass one by one. Therefore, when each process gas supplier is provided with m (m is one or more natural water) in the gas injector 130, one cycle corresponds to 360 ° / m relative to the gas injector 130 by the substrate support 120. It means to rotate at an angle.

For example, as in case 1, when the gas injection unit 130 includes the first process gas supplier 157a, the second process gas supplier 157e, and the third process gas supplier 157i, one cycle. Means that the substrate support 120 rotates at an angle of 360 ° with respect to the gas injector 130. As in Case 2, the gas injection unit 130 includes two first process gas supplies 157a and 157g, second process gas supplies 157c and 157i, and two third process gas supplies 157e and 157k, respectively. In this case, one cycle means that the substrate support 120 rotates 180 ° with respect to the gas injector 130. And in case 3, as in case 1, since the gas injection unit 130 is provided with each process gas supply, one cycle, the substrate support 120 is rotated at an angle of 360 ° with respect to the gas injection unit 130 Means that.

이다. 이와 같이, 전처리 단계(S1230)에서는 1/n 사이클 동안 즉,

시간 동안 기판 지지부(120)와 가스 분사부(130)를 상대 회전시키면서, n-1 단계의 가스 공급 단계를 수행한다. 전처리 단계(S1230)는 n-1 단계의 가스 공급 단계로 이루어지므로, 총 전처리 단계(S1230)에 소요되는 시간은

시간이 된다.At this time, each gas supply step in the pretreatment step S1230 rotates the substrate support 120 and the gas injector 130 relative to the 1 / n cycle. When the time required for the substrate support 120 to rotate relative to the gas injector 130 by t is t, the substrate support 120 and the gas injector 130 correspond to 1 / n cycles. The time it takes to rotate relative

to be. As such, in the preprocessing step S1230, that is, for 1 / n cycle,

While the substrate support part 120 and the gas injector 130 are rotated relative to each other, the gas supply step of step n-1 is performed. Since the pretreatment step (S1230) is made of a gas supply step of n-1 step, the time required for the total pretreatment step (S1230)

It's time.

For example, in case 1, since n is 3 and m is 1, the pretreatment step (S1230) performs a gas supply step of two steps, and one cycle is performed by the substrate support part 120 and the gas injection part by 360 °. It means to rotate the relative (130). Therefore, each gas supply step rotates the substrate support part 120 and the gas injection part 130 by 120 °, which is an angle corresponding to 1/3 cycle, and the time required is t / 3 hours. That is, in case 1, the pretreatment step S1230 may include a first gas supply step for supplying only the first process gas for t / 3 hours (120 ° rotation) and a first process gas for t / 3 hours (120 ° rotation). And a second gas supply step of supplying the second process gas together. Therefore, the time required for the total pretreatment step S1230 is 2t / 3 hours.

And in case 2, since n is 3 and m is 2, the pretreatment step (S1230) is to perform a gas supply step of two steps, one cycle of the substrate support 120 and the gas injection unit (180 degrees) 130 means relative rotation. Accordingly, each gas supply step rotates the substrate support 120 and the gas injector 130 by 60 °, which is an angle corresponding to 1/3 cycle, and the time required is t / 6 hours. That is, in case 2, the pretreatment step S1230 may include a first gas supply step supplying only the first process gas for t / 6 hours (60 ° rotation) and a first process gas for t / 6 hours (60 ° rotation). And a second gas supply step of supplying the second process gas together. Therefore, the time required for the total pretreatment step S1230 is t / 3 hours.

And in case 3, since n is 4 and m is 1, the pretreatment step (S1230) performs a three-stage gas supply step, and one cycle is performed by the substrate support unit 120 and the gas injection unit by 360 °. 130 means relative rotation. Therefore, each gas supply step rotates the substrate support 120 and the gas injector 130 by 90 °, which is an angle corresponding to a quarter cycle, and the time required is t / 4 hours. That is, in case 3, the pretreatment step S1230 may include a first gas supply step of supplying only the first process gas for t / 4 hours (90 ° rotation) and a first process gas and a second process gas for t / 4 hours. The second gas supply step of supplying together and the third gas supply step of supplying the first process gas, the second process gas and the third process gas together for t / 4 hours (90 ° rotation) is sequentially performed . Therefore, the time required for the total pretreatment step S1230 is 3t / 4 hours.

시간이다. Next, the main process is performed (S1240). The main process S1240 is a process of depositing a thin film on a substrate by supplying all of the first to n th process gases together. After the main process S1240 performs a (a is an integer greater than or equal to 0) cycles, an additional 1 / n cycle is performed. The time required is

It's time.

For example, in case 1, since one cycle rotates the substrate support part 120 with respect to the gas injector 130, the main process S1240 may include the first process gas, the second process gas, and the third process gas. While supplying, the substrate support 120 is rotated by N (N = a) wheels with respect to the gas injector 130, followed by an additional 120 ° rotation (1/3 cycle). The time required is (N + 1/3) × t time. In the case of case 2, since one cycle rotates the substrate support portion 120 by half a turn with respect to the gas injector 130, the main process S1240 may include the first process gas, the second process gas, and the third process gas. While supplying, the substrate support 120 is rotated by N (N = a / 2) wheels with respect to the gas injector 130, and then rotated further by 60 ° (1/3 cycles). The time required is (N + 1/6) × t time. In the case of case 3, since one cycle rotates the substrate support part 120 with respect to the gas injector 130, the main process S1240 includes the first process gas, the second process gas, and the third process gas. While supplying the fourth process gas, the substrate support part 120 is rotated by N (N = a) wheels with respect to the gas injector 130, and then rotated further by 90 °. The time required is (N + 1/4) × t time.

When performing the main process (S1240), when a purge gas is supplied together, a thin film is deposited by ALD. When the purge gas is not supplied, a thin film is deposited by cyclic CVD.

Next, a post-processing step is performed (S1250). The post-treatment step S1250 consists of a gas supply step of n-1 steps. The q (q is 1 to n-1) -th gas supply step of the gas supply step of the post-processing step S1250 supplies the q + 1 th process gas to the n th process gas onto the substrate support 120. The first gas supply step, which is the first gas supply step, supplies the second to n th process gases together. That is, the first gas supply step supplies all the other process gases except the first process gas. The second gas supply step, which is the second gas supply step, supplies the third to n th process gases together. That is, the second gas supply step supplies all the other process gases except the first process gas and the second process gas together. As a result, the gas supply step of the post-stage step S1250 is performed in a manner of not supplying one process gas after performing one gas supply step. The n-th gas supply step, which is the last gas supply step, supplies only the n-th process gas.

이다. 이와 같이, 후처리 단계(S1230)에서는 1/n 사이클 동안 즉,

시간 동안 기판 지지부(120)와 가스 분사부(130)를 상대 회전시키면서, n-1 단계의 가스 공급 단계를 수행한다. 후처리 단계(S1250)는 n-1 단계의 가스 공급 단계로 이루어지므로, 총 전처리 단계(S1250)에 소요되는 시간은

시간이 된다.Each gas supply step in the post-treatment step S1250 rotates the substrate support 120 and the gas injector 130 to correspond to a 1 / n cycle similarly to the gas supply step of the pretreatment step S1230. The time required is

to be. As such, in the post-processing step S1230, that is, for 1 / n cycles,

While the substrate support part 120 and the gas injector 130 are rotated relative to each other, the gas supply step of step n-1 is performed. Since the post-treatment step (S1250) is composed of a gas supply step of n-1, the time required for the total pre-treatment step (S1250)

It's time.

For example, in case 1, since n is 3 and m is 1, the post-processing step (S1250) performs a gas supply step of two steps, and one cycle is performed by the substrate support 120 and the gas part by 360 °. It means to rotate the sand 130. Therefore, each gas supply step rotates the substrate support part 120 and the gas injection part 130 by 120 °, which is an angle corresponding to 1/3 cycle, and the time required is t / 3 hours. That is, in case 1, the post-treatment step S1250 is performed for t / 3 hours (120 ° rotation) and for the first gas supply step for supplying the second process gas and the third process gas together for t / 3 hours (120). ° rotation) A step of sequentially performing the second gas supply step of supplying only the third process gas. Therefore, the time required for the total post-processing step (S1250) is 2t / 3 hours.

And in case 2, since n is 3 and m is 2, the post-processing step (S1250) performs a gas supply step of two steps, and one cycle includes the substrate support part 120 and the gas injection part by 180 ° angle. It means to rotate the relative (130). Accordingly, each gas supply step rotates the substrate support 120 and the gas injector 130 by 60 °, which is an angle corresponding to 1/3 cycle, and the time required is t / 6 hours. That is, in case 2, the post-treatment step S1250 is performed for t / 6 hours (60 ° rotation) and the first gas supply step for supplying the second process gas and the third process gas together for t / 6 hours (60 ° C.). ° rotation) A step of sequentially performing the second gas supply step of supplying only the third process gas. Therefore, the time required for the total post-processing step S1250 is t / 3 hours.

And in case 3, since n is 4 and m is 1, the post-processing step (S1250) performs a three-stage gas supply step, and one cycle is performed by the substrate support part 120 and the gas injection part by 360 °. It means to rotate the relative (130). Therefore, each gas supply step rotates the substrate support 120 and the gas injector 130 by 90 °, which is an angle corresponding to a quarter cycle, and the time required is t / 4 hours. That is, in case 3, the post-treatment step (S1250) is a first gas supply step for supplying the second process gas, the third process gas, and the fourth process gas together for t / 4 hours (90 ° rotation) and t /. Sequentially performing the second gas supply step of supplying the third process gas and the fourth process gas together for 4 hours and the third gas supply step of supplying only the fourth process gas for t / 4 hours (90 ° rotation) to be. Therefore, the time required for the total pretreatment step S1230 is 3t / 4 hours.

In this way, when the pre-treatment step (S1230) and the post-treatment step (S1250) are performed before and after the main process (S1240), the gas is supplied to all the substrates in the same order even when three or more kinds of process gases are deposited. Thus, the physical properties of the thin film deposited on the substrate are uniform.

In case 1, when the thin film is deposited by the method shown in FIG. 12 while rotating the substrate support part 120 in the direction indicated by the arrow of FIG. 13, the supply sequence of the gas supplied on the substrate is shown in FIGS. Shown in

FIG. 14 is a view illustrating a supply order of gases supplied on a substrate indicated by reference numeral 171 of FIG. 13, and FIG. 15 is a view illustrating a supply order of gases supplied on a substrate denoted by reference numeral 172 of FIG. 13. FIG. 16 is a view showing a supply order of gases supplied on a substrate indicated by reference numeral 173 of FIG. 13. In all the steps S1230, S12430, S1250, the purge gas was continuously supplied. Each gas supply step of the pretreatment step (S1230) and the post-treatment step (S1250) was performed for t / 3 hours to rotate the substrate support part 120 by 1/3 cycle, that is, 120 °. The main process (S1240) was performed for (N + 1/3) × t time to rotate the substrate support part 120 N times, and then rotated an additional 120 °. That is, the substrate support 120 was rotated to correspond to N + 1/3 cycles. For convenience of description, a substrate indicated by reference numeral 171 of FIG. 13 is referred to as a first substrate, a substrate indicated by reference numeral 172 as a second substrate, and a substrate indicated by reference numeral 173 is referred to as a third substrate.

First, the gas supply order supplied to the first substrate 171 will be described.

The first substrate 171 is purged with the first process gas supplier 157a during a third cycle of rotation of the substrate support 120 in the first gas supply step of the pretreatment step S1230, that is, t / 3 hours. The gas supplies 157b, 157c, and 157d are sequentially passed below. Since only the first process gas is supplied in the first gas supply step, while the first substrate 171 sequentially passes below the first process gas supplier 157a and the purge gas supplies 157b, 157c, and 157d, As illustrated in FIG. 14, the first substrate 171 is sequentially supplied with the first process gas and the purge gas. When the first gas supply step of the pretreatment step S1230 is completed, the first substrate 171 reaches the position indicated by 172 in FIG. 13.

Next, the first process gas and the second process gas are supplied together for t / 3 hours, and the second gas supply step of the pretreatment step S1230 is performed. In the second gas supply step, since the substrate support part 120 rotates one third of the cycles, the first substrate 171 sequentially descends the second process gas supplier 157e and the purge gas supplier 157f, 157g, and 157h. Passed by. Therefore, as shown in FIG. 14, the second substrate and the purge gas are sequentially supplied to the first substrate 171. When the second gas supply step of the pretreatment step S1230 is completed, the first substrate 171 reaches the position indicated by 173 of FIG. 13.

Next, while rotating the substrate support 120, the main gas (S1240) is performed by supplying the source gas and the reaction gas together for (N + 1/3) × t time. As such, when the main process S1240 is performed, the first substrate 171 may include the third process gas supplier 157i, the purge gas supplier 157j, 157k, and 157l, the first process gas supplier 157a, and the purge gas supplier. 157b, 157c, and 157d, the second process gas supplier 157e and the purge gas supplier 157f, 157g, and 157h are sequentially passed. Therefore, as shown in FIG. 14, the third process gas, the purge gas, the first process gas, the purge gas, the second process gas, and the purge gas are sequentially supplied to the first substrate 171. While the main process S1240 is performed, the substrate support 120 is rotated N times, and further rotated for an additional 1/3 cycle, so that the third process gas and the third process gas are rotated as shown in FIG. 14 during an additional 1/3 cycle. The purge gas is sequentially supplied to the first substrate 171. When the main process S1240 is completed, the first substrate 171 reaches the position indicated by 171 of FIG. 13.

Next, the first gas supply step of the post-treatment step S1250 for supplying the second process gas and the third process gas together for t / 3 hours is performed. In the first gas supply step of the post-processing step (S1250), since the substrate support part 120 rotates 1/3 cycle, the first substrate 171 may include the first process gas supplier 157a and the purge gas supplier 157b, 157c, 157d) is sequentially passed below. Since no gas is supplied through the first process gas supplier 157a, only the purge gas is supplied to the first substrate 171, as shown in FIG. 14. When the first gas supply step of the post-processing step S1250 is completed, the first substrate 171 reaches the position indicated by 172 in FIG. 13.

Next, the second gas supply step of the post-treatment step S1250 for supplying only the third process gas for t / 3 hours is performed. In the second gas supply step of the post-processing step (S1250), since the substrate support part 120 rotates one third of the cycles, the first substrate 171 may include the second process gas supplier 157e and the purge gas supplier 157f, 157g, 157h) is passed sequentially down. Since no gas is supplied through the second process gas supplier 157e, only the purge gas is supplied to the first substrate 171, as shown in FIG. 14.

The time required to perform all three steps (S1230, S1240, S1250) is (N + 5/3) × t, where the substrate support 120 has an angle corresponding to N + 5/3 cycles, That is, N × 360 ° + 360 ° + 240 ° rotation. Through this process, a thin film having a thickness corresponding to N + 1 cycles is deposited on the first substrate 171, supplied from the first process gas on the first substrate 171, and finally, if the purge gas is not considered, The third process gas is supplied. The purge gas is not involved in the reaction and does not affect the properties of the deposited thin film.

In addition, the gas supply order supplied to the second substrate 172 will be described.

The second substrate 172 is the second process gas supplier 157e and the purge gas while the substrate support 120 is rotated 1/3 cycle in the first gas supply step of the pretreatment step S1230, that is, t / 3 hours. Passed below the feeders 157f, 157g, and 157h sequentially. Since only the first process gas is supplied in the first gas supplying step, while the second substrate 172 sequentially passes below the second process gas supplier 157e and the purge gas supplier 157f, 157g, and 157h, As shown in FIG. 15, only the purge gas is supplied to the second substrate 172. When the first gas supply step of the pretreatment step S1230 is completed, the second substrate 172 reaches the position indicated by 173 of FIG. 13.

Next, the first process gas and the second process gas are supplied together for t / 3 hours, and the second gas supply step of the pretreatment step S1230 is performed. In the second gas supply step, since the substrate support part 120 rotates one third of the cycles, the second substrate 172 sequentially descends the third process gas supplier 157i and the purge gas supplier 157j, 157k, and 157l. Passed by. Since no gas is supplied through the third process gas supplier 157i, only the purge gas is supplied to the second substrate 172, as shown in FIG. 15. When the second gas supply step of the pretreatment step S1230 is completed, the second substrate 172 reaches the position indicated by 171 of FIG. 13.

Next, while rotating the substrate support 120, the main gas (S1240) is performed by supplying the source gas and the reaction gas together for (N + 1/3) × t time. As described above, when the main process S1240 is performed, the second substrate 172 may include the first process gas supplier 157a, the purge gas supplier 157b, 157c, and 157d, the second process gas supplier 157e, and the purge gas supplier. 157f, 157g, and 157h, the third process gas supplier 157i and the purge gas supplier 157j, 157k and 157l are sequentially passed. Accordingly, as shown in FIG. 15, the second substrate 172 is sequentially supplied with a first process gas, a purge gas, a second process gas, a purge gas, a third process gas, and a purge gas. While the main process S1240 is performed, the substrate support 120 is rotated N times, and further rotated an additional 1/3 cycle, so that the first process gas and the first process gas are rotated as shown in FIG. 15 during an additional 1/3 cycle. The purge gas is sequentially supplied to the second substrate 172. When the main process S1240 is completed, the second substrate 172 reaches the position indicated by 172 of FIG. 13.

Next, the first gas supply step of the post-treatment step S1250 for supplying the second process gas and the third process gas together for t / 3 hours is performed. In the first gas supply step of the post-processing step (S1250), since the substrate support part 120 rotates 1/3 cycle, the second substrate 172 may include the second process gas supplier 157e and the purge gas supplier 157f, 157g, 157h) is passed sequentially down. Since the second process gas is supplied through the second process gas supplier 157a, as shown in FIG. 15, the second process gas and the purge gas are sequentially supplied to the second substrate 172. When the first gas supply step of the post-processing step S1250 is completed, the second substrate 172 reaches the position indicated by 173 of FIG. 13.

Next, the second gas supply step of the post-treatment step S1250 for supplying only the third process gas for t / 3 hours is performed. In the second gas supply step of the post-processing step (S1250), since the substrate support part 120 rotates 1/3 cycle, the second substrate 172 may include the third process gas supplier 157i and the purge gas supplier 157j, 157k, 157l) will pass sequentially down. Since the third process gas is supplied through the third process gas supplier 157e, the third process gas and the purge gas are sequentially supplied to the second substrate 172 as shown in FIG. 15.

The time required to perform all three steps (S1230, S1240, S1250) is (N + 5/3) × t, where the substrate support 120 has an angle corresponding to N + 5/3 cycles, That is, N × 360 ° + 360 ° + 240 ° rotation. Through this process, a thin film having a thickness corresponding to an N + 1 cycle is deposited on the second substrate 172, and is supplied from the first process gas on the second substrate 172, and finally, if the purge gas is not considered, The third process gas is supplied. The purge gas is not involved in the reaction and does not affect the properties of the deposited thin film.

And the gas supply order to be supplied to the third substrate 173 will be described.

The third substrate 173 is purged with the third process gas supplier 157i for one third cycle of rotation of the substrate support 120 in the first gas supply step of the pretreatment step S1230, that is, t / 3 hours. The gas supplies 157j, 157k, and 157l are sequentially passed below. Since only the first process gas is supplied in the first gas supplying step, while the third substrate 173 sequentially passes below the third process gas supplier 157i and the purge gas supplier 157j, 157k, and 157l, As shown in FIG. 16, only the purge gas is supplied to the third substrate 173. When the first gas supply step of the pretreatment step S1230 is completed, the third substrate 173 reaches the position indicated by 171 of FIG. 13.

Next, the first process gas and the second process gas are supplied together for t / 3 hours, and the second gas supply step of the pretreatment step S1230 is performed. In the second gas supply step, since the substrate support part 120 rotates one third of the cycles, the third substrate 173 sequentially descends the first process gas supplier 157a and the purge gas suppliers 157b, 157c, and 157d. Passed by. Since the first process gas is supplied through the first process gas supplier 157a, the first process gas and the purge gas are sequentially supplied to the third substrate 173 as shown in FIG. 16. When the second gas supply step of the pretreatment step S1230 is completed, the third substrate 173 reaches the position indicated by 172 of FIG. 13.

Next, while rotating the substrate support 120, the main gas (S1240) is performed by supplying the source gas and the reaction gas together for (N + 1/3) × t time. When the main process S1240 is performed as described above, the third substrate 173 includes the second process gas supplier 157e, the purge gas supplier 157f, 157g, and 157h, the third process gas supplier 157i, and the purge gas supplier. 157j, 157k and 157l, the first process gas supplier 157a and the purge gas supplier 157b, 157c and 157d are sequentially passed. Therefore, as shown in FIG. 16, the second process gas, the purge gas, the third process gas, the purge gas, the first process gas, and the purge gas are sequentially supplied to the third substrate 173. While the main process S1240 is performed, the substrate support 120 is rotated N times, and further rotates an additional 1/3 cycle, and thus, during the additional 1/3 cycle, as shown in FIG. The purge gas is sequentially supplied to the third substrate 173. When the main process S1240 is completed, the third substrate 173 reaches the position indicated by 173 of FIG. 13.

Next, the first gas supply step of the post-treatment step S1250 for supplying the second process gas and the third process gas together for t / 3 hours is performed. In the first gas supply step of the post-processing step (S1250), since the substrate support part 120 rotates one third of the cycles, the third substrate 173 includes the third process gas supplier 157i and the purge gas supplier 157j, 157k, 157l) will pass sequentially down. Since the second process gas is supplied through the second process gas supplier 157e, as shown in FIG. 16, the second process gas and the purge gas are sequentially supplied to the third substrate 173. When the first gas supply step of the post-processing step S1250 is completed, the third substrate 173 reaches the position indicated by 171 of FIG. 13.

Next, the second gas supply step of the post-treatment step S1250 for supplying only the third process gas for t / 3 hours is performed. In the second gas supply step of the post-processing step (S1250), since the substrate support part 120 rotates one third of the cycles, the third substrate 173 may include the first process gas supplier 157a and the purge gas supplier 157b, 157c, 157d) is sequentially passed below. Since no gas is supplied through the first process gas supplier 157a, only the purge gas is supplied to the third substrate 173 as shown in FIG. 16.

The time required to perform all three steps (S1230, S1240, S1250) is (N + 5/3) × t, where the substrate support 120 has an angle corresponding to N + 5/3 cycles, That is, N × 360 ° + 360 ° + 240 ° rotation. Through this process, a thin film having a thickness corresponding to an N + 1 cycle is deposited on the third substrate 173, supplied from the first process gas on the third substrate 173, and finally, if the purge gas is not considered, The third process gas is supplied. The purge gas is not involved in the reaction and does not affect the properties of the deposited thin film.

As a result, when comparing FIGS. 14-16, the order in which purge gas is supplied differs slightly. When the first process gas is supplied to the first substrate 171, the first gas supply step of the pretreatment step S1230 and the second substrate 172, the main process S1240 and the third substrate ( 173 is different from the second gas supply step of the pretreatment step S1230. However, it can be seen that the supply order of the gases supplied to the substrates 171, 172, and 173 is the same. Since the purge gas is not involved in the reaction and does not affect the physical properties of the deposited thin film, process gases are eventually supplied to the three substrates 171, 172, and 173 in the same order. Therefore, when the thin film is deposited by the method of the present embodiment, it is possible to deposit a uniform thin film on the three substrates 171, 172, and 173.

14 to 16, only the case of the case of supplying the gas supplied to the substrate for the case 1 has been described, but in the case of case 2 and case 3 also supply the gas in the same manner as described above in Figure 12, Process gases are supplied to the substrate in the same order. Furthermore, as described with reference to FIG. 12, which is not a specific case, in general, even when n kinds of process gases are supplied, process gases are supplied to all substrates in the same order to deposit thin films by the method according to the present embodiment. It is possible to deposit a uniform thin film on all substrates.

Although the preferred embodiments of the present invention have been shown and described above, the present invention is not limited to the specific preferred embodiments described above, and the present invention belongs to the present invention without departing from the gist of the present invention as claimed in the claims. Various modifications can be made by those skilled in the art, and such changes are within the scope of the claims.

1 is a view showing a schematic configuration of a thin film deposition apparatus used in the present invention.

FIG. 2 is a cross-sectional view taken along the line II-II of FIG. 1.

3 and 4 are diagrams illustrating a gas supply sequence supplied to a substrate when the thin film is deposited by a conventional method using the thin film deposition apparatus shown in FIG. 1.

5 is a flowchart illustrating a process of performing a preferred embodiment of the thin film deposition method according to the present invention.

FIG. 6 is a flowchart illustrating a process of performing a preferred embodiment in the case of supplying only source gas in a pretreatment step and supplying only reaction gas in a posttreatment step in the thin film deposition method according to the present invention.

7 and 8 illustrate a gas supply sequence supplied to a substrate when the thin film is deposited using the method illustrated in FIG. 6.

9 is a flowchart illustrating a preferred embodiment of the present invention in the case of supplying only the reaction gas in the pretreatment step and only the source gas in the post-treatment step in the thin film deposition method according to the present invention.

10 and 11 are diagrams illustrating a gas supply sequence supplied to a substrate when the thin film is deposited using the method illustrated in FIG. 9.

12 is a flowchart illustrating a process of performing another preferred embodiment of the thin film deposition method according to the present invention.

FIG. 13 is a diagram for describing FIG. 12 as another example of the gas injector of the thin film deposition apparatus illustrated in FIG. 1.

14 to 16 illustrate a gas supply sequence supplied to a substrate when the thin film is deposited using the method illustrated in FIG. 12.

Claims (14)

A substrate support provided in the reactor and provided with a plurality of substrate seats on which the substrate is seated; A source gas supplier disposed above the substrate support and supplying source gas to the substrate support; a reaction gas supply to supply reaction gas reacting with the source gas onto the substrate support; and reacting with the source gas supply. A plurality of purge gas supplies disposed between gas supplies to supply purge gas onto the substrate support, and a gas injector in which the source gas supply, the reaction gas supply and the purge gas supply are radially disposed, and the substrate A method of depositing a thin film by using a thin film deposition apparatus that the support portion and the gas injection unit is installed to be relatively rotatable, Mounting a plurality of substrates on the substrate mounting portion; A pretreatment step of supplying any one of the source gas and the reactant gas onto the substrate support part through the gas injection part while rotating the substrate support part and the gas injection part relative to each other; A main process step of depositing a thin film on the substrate by supplying the source gas and the reaction gas together on the substrate support through the gas injector while relatively rotating the substrate support and the gas injector; And And a post-treatment step of supplying any one of the source gas and the reactive gas onto the substrate support through the gas ejection, while rotating the substrate support and the gas ejection relative to each other. The method of claim 1, The pretreatment step is a step of supplying the source gas onto the substrate support through the source gas supply, The post-treatment step is a thin film deposition method characterized in that for supplying the reaction gas on the substrate support through the reaction gas supply. The method of claim 1, The pretreatment step is a step of supplying the reaction gas on the substrate support through the reaction gas supply, The post-treatment step is a thin film deposition method characterized in that for supplying the raw material gas on the substrate support through the source gas supply. The method of claim 3, After the post-treatment step, Supplying the reaction gas onto the substrate support through the reaction gas supply, wherein the substrate support and the gas injector are rotated relative to each other so that all of the plurality of substrates pass under the reaction gas supply at least once. Thin film deposition method, characterized in that. The method according to any one of claims 1 to 4, The gas injection unit is provided with m (m is natural water) the source gas supply and m reaction gas supply, In one cycle, when the substrate support portion rotates relative to the gas ejection portion at an angle corresponding to 360 ° / m, The pretreatment step rotates the substrate support and the gas jet relative to correspond to a + ½ cycle (a is an integer greater than or equal to 0), The main process step rotates the substrate support and the gas ejector relative to correspond to b + ½ cycles (b is an integer greater than or equal to 0), The post-treatment step is a thin film deposition method characterized in that for rotating the substrate support and the gas injection unit to correspond to c + ½ cycle (c is an integer greater than 0). The method of claim 5, And the plurality of substrates are symmetrically seated with respect to the center of the substrate support. The method of claim 6, And the source gas supplier and the reactant gas supplier are symmetrically disposed with respect to the center of the gas injector. The method according to any one of claims 1 to 4, The gas injection unit is provided with m (m is natural water) the source gas supply and m reaction gas supply, When the time required when the substrate support rotates relative to the gas ejection portion is t, The pretreatment step

Run for a time (a is an integer greater than or equal to 0), The main process step

Runs for time (b is an integer greater than or equal to 0), The post-treatment step

Thin film deposition method characterized in that performed for a time (c is an integer of 0 or more). A substrate support provided in the reactor and provided with a plurality of substrate seats on which the substrate is seated; A gas injection part disposed on the substrate support part and having a radially arranged purge gas supply disposed between each of the process gas supplies and a process gas supply supplying n (n is a natural water of 3 or more) kinds of process gases; , The first process gas supplier to the n-th process gas supplier is sequentially disposed along the circumferential direction of the gas injector, a method of depositing a thin film by using a thin film deposition apparatus that the substrate support and the gas injector is rotatably installed, Mounting a plurality of substrates on the substrate mounting portion; Relatively rotating the substrate support and the gas injector such that the substrate sequentially passes below the nth process gas supplier from the first process gas supplier; While sequentially rotating the substrate support and the gas injector, the gas supply step of step n-1 is sequentially performed, wherein p (p is 1 to n-1) th gas supply step of the gas supply step is performed through the first process gas. A pretreatment step of supplying a p-th process gas onto the substrate support; A main process step of depositing a thin film on the substrate by supplying all the process gases together on the substrate support while rotating the substrate support and the gas injector relatively; And While sequentially rotating the substrate support and the gas injector, the gas supply step of step n-1 is sequentially performed, wherein q (q is 1 to n-1) th gas supply step of the gas supply step is a q + 1 process. And a post-treatment step of supplying a gas to an n-th process gas on the substrate support. 10. The method of claim 9, The gas injection unit is provided with each of the process gas supply m (m is one or more natural water), In one cycle, when the substrate support portion rotates relative to the gas ejection portion at an angle corresponding to 360 ° / m, Each gas supply step of the pretreatment step rotates the substrate support and the gas injection unit to correspond to 1 / n cycle, The main process step rotates the substrate support and the gas jet relative to correspond to a + 1 / n cycle (a is an integer greater than or equal to 0), Each gas supply step of the post-treatment step is a relatively thin film deposition method characterized in that for rotating the substrate support and the gas injection unit to correspond to 1 / n cycles. 10. The method of claim 9, The gas injection unit is provided with each of the process gas supply m (m is one or more natural water), When the time required when the substrate support rotates relative to the gas ejection portion is t, Each gas supply step of the pretreatment step

Perform for hours, The main process step

Run for a time (a is an integer greater than or equal to 0), Each gas supply step of the post-treatment step

Thin film deposition method characterized in that performed for a time. The method of claim 11, The gas injector includes a first process gas supplier, a second process gas supplier, and a third process gas supplier for depositing a ternary thin film, The pretreatment step may sequentially perform a first gas supply step of supplying the first process gas for t / 3 hours and a second gas supply step of supplying the first process gas and the second process gas together for t / 3 hours. Step, The main process step is a step of supplying the first process gas, the second process gas and the third process gas together for (a + ⅓) x t time, The post-treatment step sequentially performs a first gas supply step of supplying a second process gas and a third process gas together for t / 3 hours and a second gas supply step of supplying a third process gas for t / 3 hours. Thin film deposition method characterized in that the step. The method according to claim 10 or 11, wherein And the plurality of substrates are symmetrically seated with respect to the center of the substrate support. The method according to claim 10 or 11, wherein Each process gas supplier is a thin film deposition method, characterized in that arranged symmetrically with respect to the center of the gas injection unit.

Images