KR101050198B1 - Method of generating nanowire diode - Google Patents

Method of generating nanowire diode Download PDF

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KR101050198B1
KR101050198B1 KR1020100072024A KR20100072024A KR101050198B1 KR 101050198 B1 KR101050198 B1 KR 101050198B1 KR 1020100072024 A KR1020100072024 A KR 1020100072024A KR 20100072024 A KR20100072024 A KR 20100072024A KR 101050198 B1 KR101050198 B1 KR 101050198B1
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South Korea
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type layer
substrate
nanowire
method
forming
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KR1020100072024A
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Korean (ko)
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서정목
이슬아
이태윤
이현익
홍주리
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연세대학교 산학협력단
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035209Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
    • H01L31/035227Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures the quantum structure being quantum wires, or nanorods
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0384Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including other non-monocrystalline materials, e.g. semiconductor particles embedded in an insulating material
    • H01L31/03845Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including other non-monocrystalline materials, e.g. semiconductor particles embedded in an insulating material comprising semiconductor nanoparticles embedded in a semiconductor matrix
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus peculiar to the manufacture or treatment of these devices or of parts thereof

Abstract

PURPOSE: A method for forming a nano wire diode is provided to make a diode having high efficiency by etching only a relatively thin N(or P)-doped depth on a P(or N)-doped substrate to widen a surface area and using diffused reflection. CONSTITUTION: A photoresist pattern having a hole structure is formed at an upper part of a substrate including a P type layer and an N type layer. A metallic ion is deposited on the upper part of the substrate by using the hole structure. A nano wire is formed by performing an EMD(Electroless Metal Deposition) for an area except for the area on which the metal ion is deposited. Electrodes are formed at an upper part of the nano wire and a lower part of the substrate.

Description

Method of generating nanowire diodes

The present invention relates to a nanowire diode generation method, and more particularly to a nanowire diode generation method that can implement an integrated circuit.

Devices based on the nanowire building block structure have attracted great attention because they have superior electrical and optical characteristics than conventional devices. For devices based on nanowire building block structures, the most important factor is to effectively synthesize and assemble nanowire building block structures. Therefore, various methods for this are being studied all over the world, and researches to make nano structures of more regular and complex forms are actively conducted.

Existing silicon-based devices have already reached some limits in terms of physical size and performance, and new materials and new structures of new structures that exceed these limits are being researched and developed. As such a next-generation device, nanomaterials are in the spotlight, and research on nanowires having a one-dimensional structure (1-Dimension) is being actively conducted.

Nanowires have excellent electrical and optical properties, while at the same time distinguishing chemicals from energy structures, they have very high selectivity, crystalline quality and mobility of charge carriers. ), It is used in various nano devices such as sensors and transistors.

In particular, the sensor implementation using nanowires is of great industrial value because it can utilize the excellent electrical and optical performance of nanomaterials by growing nanowires to create vertically aligned building block structures.

However, in the case of the nanowire photodiodes currently being researched, PN structure diode devices are fabricated through doping after growing the nanowires, which is difficult to control the doping concentration due to the nature of the nanostructured material. It has the disadvantage of being difficult to show the characteristics of.

In addition, since the gas-liquid-solid (VLS) growth method is applied to the vertical growth of the nanowires, large-area growth of the nanowires is difficult, takes a long time to grow, and a large number of processes. There are problems such as this.

Therefore, in order to implement a photodiode integrated circuit having a high-performance integrated circuit, research to solve these problems is required.

An object of the present invention is to provide a method for producing a nanowire diode that can implement an integrated circuit.

Nanowire diode generation method for achieving the above object of the present invention comprises the steps of forming a photoresist pattern having a hole structure on the substrate consisting of a P-type layer and an N-type layer; Depositing metal ions on the substrate using the hole structure; Forming nanowires by performing electroless metal deposition (EMD) on regions other than the region where the metal ions are deposited; And forming an electrode on an upper portion of the formed nanowire and a lower portion of the substrate.

Here, the step of forming a photoresist pattern having a hole structure on the substrate may be to form a photoresist pattern using lithography ().

Here, the photoresist material may be SU-8.

Here, the step of forming a photoresist pattern having a hole structure on the substrate may be to form a photoresist pattern using Reactive Ion Etching (RIE).

Here, the photoresist material may be a silicon compound.

Here, electroless metal deposition (EMD) is performed on regions other than the region where the metal ions are deposited, and the forming of the nanowires is performed by using a reaction time of the electroless metal etching. It may be to control.

Here, the electroless metal etching may be performed using HF / AgNO 3 solution.

Here, the forming of the electrode on the upper portion of the formed nanowire and the lower portion of the substrate may be to form different electrodes on the upper portion of the formed nanowire and the lower portion of the substrate.

Here, the nanowires generated by using the electroless metal etching may be formed of any one of the P-type layer and the N-type layer.

Here, the nanowires generated by using the electroless metal etching may be formed of the P-type layer and the N-type layer.

According to the nanowire diode generation method as described above, the PN nanowires selectively grown vertically may be grown as nanowires of PN homojunction, and relatively thin N (or P) on the P (or N) doped substrate. Only the doped depth can be etched to increase the surface area and use diffuse reflection to produce highly efficient diodes.

In addition, a high performance image sensor can be made without degrading the performance of the photodiode or increasing the cost of adding a process, and can improve the photodiode performance by increasing the surface area and increasing the reflectance by adjusting the etching degree.

In addition, it can be used in the fabrication of devices using nanowire building block structures as well as integrated circuits incorporating them, thereby enabling the excellent electrical and optical properties of nanowires at the scale of integrated circuits. If the technology is applied, high profits are expected.

Moreover, the role of a new building block integrated structure that can overcome the limitations of existing devices can be applied without the addition of new processes, leading to high profits and mass production in the real industry.

1 is a flowchart illustrating a method of generating a nanowire diode according to an embodiment of the present invention.
2 is an exemplary view for explaining a step of forming a photoresist pattern having a hole structure on the substrate consisting of a P-type layer and an N-type layer in the nanowire diode generation method according to an embodiment of the present invention.
3 is an exemplary view for explaining a step of depositing a metal ion on the substrate using the hole structure in the nanowire diode generation method according to an embodiment of the present invention.
FIG. 4 illustrates a step of forming a nanowire by performing electroless metal etching (EMD) on a region other than the region where the metal ion is deposited in the nanowire diode generation method according to an embodiment of the present invention. It is an exemplary view for explaining.
FIG. 5 is an exemplary view for explaining an operation of forming an electrode on an upper portion of the formed nanowire and a lower portion of the substrate in the nanowire diode generation method according to an embodiment of the present invention.
6 is an exemplary view for explaining that the nanowires are formed of any one of the P-type layer and the N-type layer in the nanowire diode generation method according to an embodiment of the present invention.
7 is an exemplary view for explaining that the nanowires are formed of the P-type layer and the N-type layer in the nanowire diode generation method according to an embodiment of the present invention.

As the present invention allows for various changes and numerous embodiments, particular embodiments will be illustrated in the drawings and described in detail in the written description.

However, this is not intended to limit the present invention to specific embodiments, it should be understood to include all modifications, equivalents, and substitutes included in the spirit and scope of the present invention.

Hereinafter, with reference to the accompanying drawings, it will be described in detail a preferred embodiment of the present invention. In describing the present invention, in order to facilitate the overall understanding, the same reference numerals are used for the same elements in the drawings, and redundant description of the same elements is omitted.

1 is a flowchart illustrating a method of generating a nanowire diode according to an embodiment of the present invention.

Referring to FIG. 1, the nanowire diode generation method according to an embodiment of the present invention includes forming a photoresist pattern having a hole structure on a substrate formed of a P-type layer and an N-type layer (step 110); Depositing metal ions on the substrate using the hole structure (step 120); Forming a nanowire by performing electroless metal deposition (EMD) on a region other than the region where the metal ion is deposited (step 130); And forming an electrode on an upper portion of the formed nanowire and a lower portion of the substrate (step 140).

2 is an exemplary view for explaining a step of forming a photoresist pattern having a hole structure on the substrate consisting of a P-type layer and an N-type layer in the nanowire diode generation method according to an embodiment of the present invention.

The step (step 110) of forming a photoresist pattern having a hole structure on the substrate including the P-type layer and the N-type layer may be to form a photoresist pattern using lithography (). As described above, the photoresist material may use SU-8 to form the photoresist pattern using lithography.

In addition, the step (step 110) of forming a photoresist pattern having a hole structure on the substrate consisting of the P-type layer and the N-type layer may be to form a photoresist pattern using Reactive Ion Etching (RIE). have. As described above, in order to form the photoresist pattern using Reactive Ion Etching (RIE), the photoresist material may use a silicon compound.

3 is an exemplary view for explaining a step of depositing a metal ion on the substrate using the hole structure in the nanowire diode generation method according to an embodiment of the present invention.

Next, depositing metal ions on the substrate using the hole structure (step 120) may use a hole structure formed in the photoresist pattern for metal ion deposition. That is, the metal ions may be deposited on the substrate exposed by the hole structure.

In the subsequent electroless metal etching step, the metal ion deposited portion will not be etched by the effect of the metal ion deposition, and as a result, the metal ion deposited portion may be formed of nanowires.

As a result, the shape and the degree of integration of the nanowires may be determined according to the hole structure on the substrate formed in the step (110) of forming a photoresist pattern having a hole structure on the substrate consisting of the P-type layer and the N-type layer.

FIG. 4 illustrates a step of forming a nanowire by performing electroless metal etching (EMD) on a region other than the region where the metal ion is deposited in the nanowire diode generation method according to an embodiment of the present invention. It is an exemplary view for explaining.

Electroless Metal Deposition (EMD) is performed on the regions other than the regions where the metal ions are deposited, and the forming of the nanowires (Step 130) is performed by using the reaction time of the electroless metal etching. It may be to control the depth.

That is, by controlling the reaction time of the electroless metal etching, it is possible to control the depth of the etching, it is possible to control the nanowire to include both the P-type layer and the N-type layer by controlling the depth of the etching.

In addition, the electroless metal etching may be performed by using a HF / AgNO 3 solution.

In this case, the electroless metal deposition (EMD) is not performed on the portion where the metal ions are deposited, and only the portions where the metal ions are deposited are etched. It remains without being affected by etching, and the remaining part without being affected by the etching may be formed as a nanowire.

FIG. 5 is an exemplary view for explaining an operation of forming an electrode on an upper portion of the formed nanowire and a lower portion of the substrate in the nanowire diode generation method according to an embodiment of the present invention.

The step (step 140) of forming the electrode on the upper portion of the formed nanowire and the lower portion of the substrate may be to form different electrodes on the upper portion of the formed nanowire and the lower portion of the substrate.

That is, the electrode may be formed using Au in the P-type layer and the electrode may be formed in the N-type layer using ITO. In other words, a metal suitable for forming a diode structure may be freely formed as an electrode.

6 is an exemplary view for explaining that the nanowires are formed of any one of the P-type layer and the N-type layer in the nanowire diode generation method according to an embodiment of the present invention. 7 is an exemplary view for explaining that the nanowires are formed of the P-type layer and the N-type layer in the nanowire diode generation method according to an embodiment of the present invention.

Referring to FIGS. 6 and 7 in parallel, the nanowires generated by using the electroless metal etching may be formed including both the P-type layer and the N-type layer, and also by using the electroless metal etching. The generated nanowires may be formed of any one of the P-type layer and the N-type layer.

That is, according to the reaction time control of the electroless metal etching, nanowires may be formed only by the N-type layer, and nanowires may be formed only by the P-type layer. In addition, nanowires including both an N-type layer and a P-type layer may be formed. Eventually, it will be possible to freely form nanowires suitable for the purpose.

In addition, the nanowire diode generated by using the nanowire diode generation method according to an embodiment of the present invention comprises the steps of forming a photoresist pattern having a hole structure on the substrate consisting of a P-type layer and an N-type layer; Depositing metal ions on the substrate using the hole structure; Forming nanowires by performing electroless metal deposition (EMD) on regions other than the region where the metal ions are deposited; And forming an electrode on an upper portion of the formed nanowire and a lower portion of the substrate.

In addition, the nanowire photodiode produced using the nanowire diode generation method according to an embodiment of the present invention comprises the steps of forming a photoresist pattern having a hole structure on the substrate consisting of a P-type layer and an N-type layer; Depositing metal ions on the substrate using the hole structure; Forming nanowires by performing electroless metal deposition (EMD) on regions other than the region where the metal ions are deposited; And forming an electrode on an upper portion of the formed nanowire and a lower portion of the substrate.

In addition, since the diode and the photodiode may constitute various types of devices, the diode and the photodiode may be used in various electronic / electrical devices such as an image sensor.

Although described with reference to the embodiments above, those skilled in the art will understand that the present invention can be variously modified and changed without departing from the spirit and scope of the invention as set forth in the claims below. Could be.

210: P type layer (or N type layer)
220: N type layer (or P type layer)
230: photoresist pattern layer
240: first electrode layer
250: second electrode layer

Claims (10)

  1. Forming a photoresist pattern having a hole structure on the substrate composed of a P-type layer and an N-type layer;
    Depositing metal ions on the substrate using the hole structure;
    Forming nanowires by performing electroless metal deposition (EMD) on regions other than the region where the metal ions are deposited; And
    And forming an electrode on an upper portion of the formed nanowire and a lower portion of the substrate.
  2. The method of claim 1,
    Forming a photoresist pattern having a hole structure on the substrate is characterized in that to form a photoresist pattern using lithography ().
  3. The method of claim 2,
    And the photoresist material is SU-8.
  4. The method of claim 1,
    The forming of the photoresist pattern having a hole structure on the substrate may include forming a photoresist pattern using Reactive Ion Etching (RIE).
  5. The method of claim 4, wherein
    And the photoresist material is a silicon compound.
  6. The method of claim 1,
    Electroless Metal Deposition (EMD) is performed on regions other than the region where the metal ions are deposited, and the forming of the nanowires is performed by controlling the depth of etching using the reaction time of the electroless metal etching. Nanowire diode generation method, characterized in that.
  7. The method of claim 1,
    The electroless metal etching method of producing a nanowire diode, characterized in that performed using HF / AgNO 3 solution.
  8. The method of claim 1,
    Forming an electrode on the top of the formed nanowire and the bottom of the substrate is a nanowire diode generation method, characterized in that to form a different electrode on the top of the formed nanowire and the bottom of the substrate, respectively.
  9. The method of claim 1,
    The nanowires produced by using the electroless metal etching are nanowire diode generation method, characterized in that formed in any one of the P-type layer and N-type layer.
  10. The method of claim 1,
    The nanowires produced by using the electroless metal etching are nanowire diode generation method, characterized in that formed by the P-type layer and the N-type layer.
KR1020100072024A 2010-07-26 2010-07-26 Method of generating nanowire diode KR101050198B1 (en)

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030087642A (en) * 2001-03-14 2003-11-14 유니버시티 오브 매사츄세츠 Nanofabrication
KR20070069956A (en) * 2005-12-28 2007-07-03 동부일렉트로닉스 주식회사 Method for fabricating micro pattern
JP2009260238A (en) 2008-03-18 2009-11-05 Fujitsu Ltd Sheet type structure and its manufacturing method as well as electronic instrument and its manufacturing method

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030087642A (en) * 2001-03-14 2003-11-14 유니버시티 오브 매사츄세츠 Nanofabrication
KR20070069956A (en) * 2005-12-28 2007-07-03 동부일렉트로닉스 주식회사 Method for fabricating micro pattern
JP2009260238A (en) 2008-03-18 2009-11-05 Fujitsu Ltd Sheet type structure and its manufacturing method as well as electronic instrument and its manufacturing method

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