KR101018833B1 - Apparatus for processing substrate - Google Patents

Abstract

The present invention relates to a semiconductor substrate processing apparatus. The present invention provides a chamber for performing a process on a semiconductor substrate, at least one connecting portion installed to communicate with an interior of the chamber, and coupled to the connecting portion. It relates to a semiconductor substrate processing apparatus including at least one measuring unit for measuring the internal process of the chamber and a heating unit for supplying and heating the heat to the connecting portion.

Chamber, Measuring Unit, Heating Section

Description

Semiconductor substrate processing apparatus {Apparatus for processing substrate}

The present invention relates to a semiconductor substrate processing apparatus, and more particularly, to a semiconductor substrate processing apparatus for preventing the deposition of metals and particles generated during the manufacturing process in the measuring unit for measuring the internal process of the chamber for manufacturing a semiconductor substrate. .

In general, in order to manufacture semiconductors, liquid crystal displays (LCDs), and organic light emitting diodes (OLEDs), semiconductor substrates are introduced into chambers capable of maintaining low, high and ultra-high vacuum conditions, and the injected substrates are subjected to various processes. To manufacture.

In the process of manufacturing the semiconductor substrate through this process, a vacuum gauge or the like is installed in communication with the inside of the chamber to measure the degree of vacuum inside the chamber in a vacuum state.

When the semiconductor substrate is introduced into the chamber, various processes are performed. For example, in the process of manufacturing through etching, deposition, and cleaning, a metal and a particle are installed in communication with the chamber instead of coexisting only in the chamber. It enters the gauge and deposits metals and particles, causing frequent failures.

As a result, the life of the vacuum gauge is shortened and physical waste is generated, and it is difficult to accurately measure the process inside the chamber during the process.

In addition, when the product is manufactured in a state where accurate measurement is not made, the problem that the defect rate increases was accompanied.

In addition, in order to prevent this is inconvenient because it involves work such as continuous inspection and replacement.

An object of the present invention for improving and solving the problems described above is to provide a semiconductor substrate processing apparatus that can prevent the deposition of metals and particles, etc. in the measuring unit for measuring the process inside the chamber during the semiconductor manufacturing process It is.

The semiconductor substrate processing apparatus of the present invention for achieving the object of the present invention as described above, the chamber for performing a process on the semiconductor substrate, at least one connection portion is installed in communication with the interior of the chamber, and coupled with the connection portion At least one measuring unit for measuring an internal process of the chamber and a heating unit for supplying heat to the connection portion to heat.

Preferably, the connection portion is formed integrally with the end of the insertion tube and the hollow insertion tube is inserted into the chamber, and comprises a hollow coupling piece to which the measuring unit is coupled.

Preferably, the heating unit includes a heating member disposed in the connection portion and a power supply unit for providing a heat source to the heating member.

Preferably, the heating member is wound in the form of a coil on the outside of the connecting portion.

Preferably, the heating unit further includes a heat transfer member provided between the hot wire member and the connection portion.

Preferably, the heating member is integrally formed inside the connection portion.

Preferably the measuring unit is characterized in that the vacuum gauge or ion gauge for measuring the degree of vacuum in the chamber.

Preferably, the apparatus further includes a temperature sensor for sensing a temperature of the connection part heated by the heating part.

In addition, the chamber for performing a process on the semiconductor substrate, at least one connecting portion provided to communicate with the interior of the chamber, at least one measuring unit for measuring the internal process of the chamber and the heat transfer between the connecting portion and the measuring unit It includes a heating unit provided to supply.

Preferably, the heating unit includes a hollow heat transfer member having both ends coupled to the connection unit and the measurement unit, a heating wire member disposed on the heat transfer member, and a power supply unit for providing a heat source to the heating wire member.

As described above, according to the present invention, the semiconductor substrate processing apparatus of the present invention has the following effects.

The present invention prevents the metal and particles generated during the manufacturing process from flowing through the connection unit by installing a heating unit that can provide a heat source outside the connection unit connected to the chamber or between the connection unit and the measurement unit, thereby improving the life of the measurement unit. There is an advantage to extend.

In addition, since metals and particles generated during the manufacturing process are not deposited on the measuring unit, it is possible to attenuate human and material waste caused by inspection and replacement.

In addition, since the metal and particles generated during the manufacturing process by the heating unit are not deposited in the measuring unit, a more accurate process inside the chamber can be measured, and thus, a failure rate can be attenuated and thus material waste can be attenuated.

In addition, by installing a heating unit to prevent the deposition of metal and particles in the measuring unit, since frequent replacement work is not necessary due to the failure of the conventional measuring unit, it is possible to selectively install the on-off valve installed between the measuring unit and the connecting portion There is an advantage.

As the invention allows for various changes and numerous embodiments, particular embodiments will be illustrated in the drawings and described in detail in the written description. However, this is not intended to limit the present invention to specific embodiments, it should be understood to include all modifications, equivalents, and substitutes included in the spirit and scope of the present invention. Like reference numerals are used for like elements in describing each drawing.

All terms used in the present invention may have the same meaning as commonly understood by those of ordinary skill in the art. Terms such as those defined in the commonly used dictionaries should be construed as having meanings consistent with the meanings in the context of the related art, and shall not be construed in ideal or excessively formal meanings unless expressly defined in this application. Does not.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. In order to facilitate a thorough understanding of the present invention, the same reference numerals are used for the same means regardless of the number of the drawings.

1 is a perspective view of a semiconductor substrate processing apparatus according to an embodiment of the present invention, FIG. 2 is an exploded perspective view of a semiconductor substrate processing apparatus according to an embodiment of the present invention, and FIG. 3 is a heating unit of an embodiment of the present invention. Is a perspective view further including a heat transfer member, Figure 4 shows a perspective view of the on-off valve mounted state according to an embodiment of the present invention.

1 to 4, a semiconductor substrate processing apparatus according to an embodiment of the present invention includes a chamber 10, a connection part 100, a heating part 200, a measuring unit 300, and the like.

The chamber 10 is hermetically sealed to maintain a vacuum state, that is, a low vacuum, high vacuum, or ultrahigh vacuum state, and is mounted on which a semiconductor substrate to be manufactured is processed through deposition, etching, and cleaning processes. A part (not shown) is provided.

Here, the chamber 10 is a known technique, and detailed description thereof will be omitted.

In addition, at least one connection hole 11 is formed at one side of the chamber 10 to measure the inside of the vacuum state.

The connection part 100 is coupled to the at least one connection hole 11 so that the insertion tube 110 of the hollow is formed so as to communicate with the chamber 10, and integrally formed at the end of the insertion tube 110, measurement to be described later The hollow coupling piece 120 to which the unit 300 is coupled is formed.

On the other hand, the insertion tube 110 may be fixed to the connection hole 11 by the joining operation or the like, or close contact by the interference fitting coupling or screw coupling of the insertion tube 110 and the connection hole (11). Of course, it can be combined, as well as can be combined by a variety of other coupling methods.

At this time, the sealing member (not shown), that is, the gasket or the O-ring, etc. may be coupled between the connection hole 11 and the insertion pipe 110 to increase the sealing.

In addition, the connection portion 100 is preferably made of a material that is excellent in heat conduction (heat conduction) and does not easily occur, for example, silver, copper, gold, aluminum, and the like may be used.

The heating unit 200 includes a hot wire member 210 and a heat transfer member 220.

Here, the heating part 200 is installed outside the connection part 100 installed in the chamber 10 to supply electric heat.

In addition, the metal and particles generated during the etching or deposition and the cleaning process are blocked by the supplied heat to the connection part 100.

The heating wire member 210 is formed in a coil shape, and when power is supplied from the power supply unit 700, heat is generated while the heating wire member 210 wound in a coil shape is heated. At this time, if the heating member 210 is installed in the connecting portion 100, the heated heat is provided to the connecting portion 100.

In addition, in the exemplary embodiment of the present invention, the coil-type hot wire member 210 has been described as an example, but of course, the heat wire member 210 may be implemented in various forms.

In addition, the heat transfer member 220 is provided in the connection portion 100 to provide the connection portion 100 by receiving the heat of the heat ray member 210 primarily, rather than directly providing heat generated by the heat ray member 210. It may be further included. That is, the heat transfer member 220 is further provided between the connection portion 100 and the hot wire member 210. (See FIG. 3).

Here, the heat transfer member 220 may be formed in a tubular shape, of course, may be formed in various shapes to be fixed to the connecting portion 100.

In addition, it may be configured to measure the heat provided by installing the temperature sensor 230 in the heat transfer member 220 or the connection portion 100.

This is provided to provide heat at an appropriate temperature or to prevent the supply of excessive heat.

The measuring unit 300 is coupled to one side of the connection portion 100 to measure the interior of the chamber 10. At this time, the coupling unit 100 is coupled to the measurement unit 300 in close contact, the coupling method may be combined in a variety of ways, such as the screw coupling or fitting coupling described.

In addition, when the connection unit 100 and the measurement unit 300 are coupled to each other, when the connection unit 100 and the measurement unit 300 are combined with a sealing member at the coupling portion, the adhesion may be increased.

Here, the measuring unit 300 may be any one of a vacuum gauge or an ion gauge for measuring the degree of vacuum in the chamber 10, and may check not only the degree of vacuum in the chamber 10, but also the temperature, pressure, and process state. Various measuring units 300 can be applied.

In addition, the measuring unit 300 preferably uses a vacuum gauge capable of measuring both the vacuum state inside the chamber 10, that is, the ultra high vacuum, the high vacuum, and the low vacuum state.

In addition, by forming a jaw protruding to the outside of each of the end of the coupling piece 120 and the end of the measuring unit 300 may be implemented to be tightly fixed by a pair of coupling members (400a, 400b) provided separately. .

In this way, by using a pair of coupling members 400a and 400b, the connection part 100 and the measurement unit 300 can be easily separated.

In addition, one side of the pair of coupling members (400a, 400b) is provided with a fastening member such as screws or bolts to loosen or tighten the pair of coupling members (400a, 400b), preferably by hand to easily pull Butterfly bolts that can be fastened or tightened can be used.

In addition, an opening / closing valve 600 capable of opening and closing the connecting unit and the measuring unit to be in communication with each other between the measuring units 300 coupled to the connecting unit 100 may be installed. (See FIG. 4).

Here, the opening and closing valve 600 is installed to maintain the internal vacuum degree, pressure and temperature of the chamber 10 during the replacement operation due to the failure of the measuring unit 300.

At this time, if the measurement unit 300 is detached without closing the on / off valve 500, the internal vacuum degree of the chamber 10 is changed, so that continuous work becomes difficult, and a lot of time is required to position the preset vacuum degree to the normal state. In general, it is installed between the connecting portion 100 and the measuring unit 300 of the chamber 10.

However, in the present invention, since metals and particles are not deposited on the measuring unit 300 due to the heat provided by the heating unit 200, frequent failures do not occur, and thus, a separate on / off valve 600 may not be installed. will be.

5 is a perspective view illustrating a semiconductor substrate processing apparatus having a separate heating unit as another embodiment of the present invention.

Referring to FIG. 5, a connection part 100 and a measurement unit 300 are provided, and a heating part 200 is provided between the connection part 100 and the measurement unit 300.

The heating unit 200 is composed of a hot wire member 210 and the heat transfer member 220.

The heating unit 200 is disposed between the connecting unit 100 and the measuring unit 300 so that both ends of the heating unit 200 are connected to the connecting unit 100 and the measuring unit 300, respectively.

In this case, the heating unit 200 is preferably connected to the connection part 100 and the measurement unit 300, preferably, at one end of the coupling piece 120 and the measurement unit 300 of the connection part 100. Each of the jaws protruding to the outside, the jaw formed on the coupling piece 120 and the measuring unit 300 may be coupled to each other by forming the jaws at both ends of the heat transfer member 220 to be the same or corresponding.

At this time, when the sealing member 500 is disposed and connected to both ends of the heating part 200 which is disposed between and coupled between the connection part 100 and the measuring unit 300, the adhesion and the sealing can be increased.

In addition, the heating wire member 210 is installed on the outer circumference between the jaws formed at both ends of the heat transfer member 220.

Here, the heat wire member 210 provides heat to the heat transfer member 220 when the power is supplied from the power supply 700, and the provided heat is provided to the inner space of the heat transfer member 220 to process semiconductor etching or deposition. When the metal and particles generated during the inflow through the connection portion 100 is blocked by the heat of the heating unit 200.

Therefore, metals and particles generated during the process are not deposited on the measuring unit 300 connected to the heating unit 200, thereby preventing failure, and extending the life of the measuring unit 300.

In addition, it is possible to more accurately measure the degree of vacuum, pressure and temperature inside the chamber (not shown).

6 is a cross-sectional perspective view showing another embodiment of the present invention in which a heating wire member is included in a connection portion.

Referring to FIG. 6, the heating wire member 210 is integrally formed inside the connection portion 100 to which the chamber (not shown) and the measurement unit (not shown) are connected.

When the heating wire member 210 is integrally formed in the connection part 100 as described above, it is possible to block metals and particles introduced into the connection part 100 by providing heat by itself without installing a separate heating part (not shown). Can be implemented.

It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the present invention as defined by the following claims It can be understood that

1 is a perspective view of a semiconductor substrate processing apparatus according to an embodiment of the present invention.

2 is an exploded perspective view of a semiconductor substrate processing apparatus according to an embodiment of the present invention.

Figure 3 is a perspective view further comprising a heat transfer member in the heating unit of an embodiment of the present invention.

Figure 4 is a perspective view of the on-off valve mounted state according to an embodiment of the present invention.

5 is a perspective view of a semiconductor substrate processing apparatus having a separate heating unit according to another embodiment of the present invention.

6 is a cross-sectional perspective view of a heating wire member including a connection part of another embodiment of the present invention;

Explanation of symbols on the main parts of the drawings

10 chamber 11: connecting hole

100: connection 110: insertion tube

120: coupling piece 200: heating part

210: heat wire member 220: heat transfer member

230: temperature sensor 300: measuring unit

400a, 400b: coupling member 500: sealing member

600: on-off valve 700: power supply

Claims (10)

A chamber for performing a process on the semiconductor substrate; At least one connection part installed to communicate with an inside of the chamber; At least one measuring unit coupled to the connection unit and measuring an internal process of the chamber; And It includes a heating unit for supplying heat by heating the connection portion, And a temperature sensor for sensing a temperature of the connection part heated by the heating part. The method of claim 1, wherein the connection portion, A hollow insertion tube inserted into the chamber; And And a hollow coupling piece which is integrally formed at an end of the insertion tube and to which the measurement unit is coupled. The method of claim 1, wherein the heating unit, A heating member disposed on the connection unit; And And a power supply unit for providing a heat source to the hot wire member. The method of claim 3, wherein The heating element is a semiconductor substrate processing apparatus, characterized in that wound in the form of a coil on the outside of the connecting portion. A chamber for performing a process on the semiconductor substrate; At least one connection part installed to communicate with an inside of the chamber; At least one measuring unit coupled to the connection unit and measuring an internal process of the chamber; And It includes a heating unit for supplying heat by heating the connection portion, Further comprising a temperature sensor for sensing the temperature of the connection portion heated by the heating unit, The heating unit, A heating member disposed on the connection unit; And It includes a power supply for providing a heat source to the hot wire member, The heating member is wound in the form of a coil on the outside of the connecting portion, The heating unit further comprises a heat transfer member provided between the hot wire member and the connection portion. The method of claim 3, wherein The heating element is a semiconductor substrate processing apparatus, characterized in that formed integrally in the connecting portion. The method of claim 1, The measuring unit is a semiconductor substrate processing apparatus, characterized in that the vacuum gauge or ion gauge for measuring the degree of vacuum in the chamber. delete A chamber for performing a process on the semiconductor substrate; At least one connection part installed to communicate with an inside of the chamber; At least one measuring unit measuring an internal process of the chamber; And It includes a heating unit provided to supply the heat between the connecting unit and the measuring unit, And a temperature sensor for sensing a temperature of the connection part heated by the heating part. The method of claim 9, wherein the heating unit, A hollow heat transfer member having both ends coupled to the connection unit and the measurement unit, respectively; A heating wire member disposed on the heat transfer member; And And a power supply unit for providing a heat source to the hot wire member.

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