KR101006676B1 - Charged particle beam lithography apparatus and charged particle beam lithography method - Google Patents

Abstract

The charged particle beam drawing apparatus includes a first block region dividing unit for dividing a drawing region into a plurality of first block regions at a size at which the number of shots at the time of drawing is approximately equal to each other, and the drawing region to any of the first block regions. An area density calculator for calculating the pattern area density of each of the small areas located inside each of the first block areas by using a plurality of small areas virtually divided into a mesh shape with a predetermined smaller size; A second block region divider for dividing the second block region into a plurality of second block regions having a uniform size larger than that of the small region, and a proximity effect in each of the small regions located inside the second block region for each of the second block regions. Corrected dose calculation section for calculating the corrected dose using the corresponding pattern area density of the small region, and beam irradiation of the charged particle beam in each small region And a beam irradiation amount calculating unit for calculating a small area using the proximity effect correction irradiation amount corresponding to the small area, and a drawing unit for irradiating the charged particle beam with the beam irradiation amount calculated for each small area to draw a predetermined pattern on a sample. It is characterized by.

Pattern Area Density, Beam Dose, Small Area, Block Area, Drawing Unit

Description

Charged Particle Beam Writing Apparatus and Charged Particle Beam Writing Method {CHARGED PARTICLE BEAM LITHOGRAPHY APPARATUS AND CHARGED PARTICLE BEAM LITHOGRAPHY METHOD}

<Related application>

This application is based on Japanese Patent Application No. 2007-229853 for which it applied on September 5, 2007, and claims that priority, The whole content is integrated in this specification as a reference.

TECHNICAL FIELD The present invention relates to a charged particle beam drawing apparatus and a charged particle beam drawing method, and for example, to a charged particle beam drawing apparatus and a charged particle beam drawing method for correcting dimensional variation due to a proximity effect.

Lithography technology, which is responsible for the progress of miniaturization of semiconductor devices, is a very important process for generating a unique pattern among semiconductor manufacturing processes. In recent years, with the high integration of LSI, the circuit line width required for semiconductor devices has been miniaturized year by year. In order to form a desired circuit pattern in these semiconductor devices, a highly accurate original pattern (also called a reticle or a mask) is required. Here, an electron beam (electron beam) drawing technique has inherently excellent resolution, and is used for production of a high-precision original pattern.

7 is a conceptual diagram for explaining the operation of the variable shaping electron beam drawing apparatus. The variable shaping electron beam (EB) drawing apparatus operates as follows. First, a rectangular, for example, rectangular opening 411 for forming the electron beam 330 is formed in the first aperture 410. The second aperture 420 is provided with a variable shaping opening 421 for shaping the electron beam 330 that has passed through the opening 411 into a desired rectangular shape. The electron beam 330 irradiated from the charged particle source 430 and passed through the opening 411 is deflected by the deflector. Then, the sample mounted on the stage is irradiated through a portion of the variable shaping opening 421. The stage is continuously moving in a predetermined one direction (for example, the X direction) during drawing. In this way, a rectangular shape that can pass through both the opening 411 and the variable shaping opening 421 is drawn in the drawing region of the sample 340. The method of creating an arbitrary shape by passing both the opening 411 and the variable shaping opening 421 is called a variable shaping system.

In the electron beam drawing described above, line width uniformity is required in a more accurate sample plane, for example, in the mask plane. Here, in the electron beam drawing, when the electron beam is irradiated to a mask coated with a resist to draw a circuit pattern, the electron beam penetrates the resist layer to reach the lower layer, and is called a proximity effect by backscattering which reenters the resist layer. A phenomenon occurs. Thereby, the dimension variation which draws in the dimension which shifted from the desired dimension at the time of drawing generate | occur | produces.

맵을 이용하여, 묘화하기 위한 조사량을 산출하는 방법에 관한 기재가 문헌에 개시되어 있다(예를 들어, 일본 특허 공개2005-195787호 공보 참조).In order to correct this proximity effect, the effect map is created by dividing the entire circuit pattern into proximity effect small compartments of 0.5 µm on one side. And the irradiation amount (fixed value) which can draw the circuit pattern of 50% of predetermined | prescribed area density suitably, the proximity effect influence value (alpha) map, and the proximity effect correction coefficient

The description regarding the method of calculating the irradiation amount for drawing using a map is disclosed by literature (for example, refer Unexamined-Japanese-Patent No. 2005-195787).

In the conventional proximity effect correction calculation, the chip area is divided into calculation areas (blocks) of the same size, and the correction calculation is performed for each block. In order to perform the calculation, the block is calculated by dividing the block into smaller regions having a smaller mesh shape. In addition, a pattern area density map is defined for each block in which the pattern area density obtained by cumulatively adding the area of the internal figure cut out by the small area is defined at the small area position. The pattern area density map is used in the proximity effect correction calculation.

Here, the calculation time of the pattern area density calculation is proportional to the number of shots. Therefore, since the number of shots is different in blocks having the same size, there is a problem that the calculation time for each block is different and cannot be calculated efficiently. Therefore, by changing the size of the block so that the number of shots included in each block is about the same, the calculation time between the blocks can be made the same.

On the other hand, the calculation time of the proximity effect correction calculation is proportional to the number of small areas of the mesh shape. Therefore, the calculation time becomes long in the area where the block size is large, and the calculation time is shortened on the contrary in the area where the block size is small. Therefore, when the block size is made nonuniform for the calculation of the pattern area density, there is a problem in that the calculation time for each block is different in the proximity effect correction calculation, and the calculation cannot be performed efficiently. As described above, if one side is prioritized, a problem occurs on the other side.

An object of the present invention is to provide a drawing apparatus and method capable of efficiently performing a pattern area density calculation and a proximity effect correction calculation.

The charged particle beam drawing apparatus of one embodiment of the present invention,

A first block region dividing unit for dividing the drawing region into a plurality of first block regions at a size such that the number of shots at the time of drawing is substantially equal to each other;

Area density which calculates the pattern area density of each small area | region located inside every 1st block area | region using the several small area | region virtually divided | segmented by the mesh shape into the predetermined size smaller than any one of a 1st block area | region. The calculation unit,

A second block region dividing unit for dividing a drawing region divided into a plurality of first block regions into a plurality of second block regions with a uniform size larger than a small region again;

A correction dose calculator for calculating the proximity effect correction dose in each of the small regions located within the second block region for each second block region using the pattern area density of the corresponding small region;

A beam irradiation amount calculating unit that calculates the beam irradiation amount of the charged particle beam in each small region by using the corresponding small area proximity effect correction irradiation amount;

It is characterized by including the drawing part which irradiates a charged particle beam with the beam irradiation amount computed for every small area | region, and draws a predetermined pattern on a sample.

Moreover, the charged particle beam drawing method of one embodiment of the present invention,

The drawing area is divided into a plurality of first block areas so that the number of shots at the time of drawing becomes substantially the same as each other,

The pattern area density of each small region located inside each first block region is calculated using a plurality of small regions virtually divided into meshes in a predetermined size smaller than any of the first block regions. ,

The drawing area divided into the plurality of first block areas is further divided into a plurality of second block areas with a uniform size larger than the small area,

Proximity effect correction dose in each small region located inside the second block region for each second block region is calculated using the pattern area density of the corresponding small region,

The beam irradiation amount of the charged particle beam in each small area is calculated using the corresponding small area proximity effect correction irradiation amount,

It is characterized in that a predetermined pattern is drawn on the sample by irradiating the charged particle beam with the beam irradiation amount calculated for each small region.

According to the present invention, it is possible to provide a drawing apparatus and method capable of efficiently performing a pattern area density calculation and a proximity effect correction calculation.

Hereinafter, embodiment demonstrates the structure using an electron beam as an example of a charged particle beam. However, the charged particle beam is not limited to the electron beam, and may be a beam using other charged particles such as an ion beam.

First embodiment

1 is a conceptual diagram showing the configuration of a drawing device in a first embodiment. In FIG. 1, the drawing apparatus 100 is equipped with the drawing part 150 and the control part 160. As shown in FIG. The drawing apparatus 100 becomes an example of a charged particle beam drawing apparatus. And the drawing apparatus 100 draws the desired pattern on the sample 101. FIG. The drawing unit 150 has an electron barrel 102 and a drawing chamber 103. In the electron barrel 102, an electron gun 201, an illumination lens 202, a blanking (BLK) deflector 212, a blanking (BLK) aperture 214, a first aperture 203, and a projection lens 204. ), A deflector 205, a second aperture 206, an objective lens 207, and a deflector 208 are disposed. In the drawing chamber 103, an XY stage 105 arranged to be movable is arranged. In addition, the sample 101 is disposed on the XY stage 105. As the sample 101, for example, an exposure mask substrate for transferring a pattern onto a wafer is included. As a mask substrate, the mask blank which nothing is drawn yet is contained. The control unit 160 includes a drive circuit 108, magnetic disk devices 109 and 140, a deflection control circuit 110, a digital-to-analog converter (DAC) 112, 114, and 116, a control calculator 120, and a memory 121. ) In the control calculator 120, the block area divider 122, 128, and 132, the mesh divider 124, the area density calculator 126, the proximity effect correction calculator 130, the dose calculator 134, Each function has an irradiation time calculation unit 136 and a drawing data processing unit 138. The drawing data stored in the magnetic disk device 109 is input to the control calculator 120. The information input to the control calculator 120 or the information during and after the arithmetic processing is stored in the memory 121 each time.

The memory 121, the deflection control circuit 110, and the magnetic disk devices 109, 140 are connected to the control calculator 120 via a bus (not shown). The deflection control circuit 110 is connected to the DACs 112, 114, and 116. The DAC 112 is connected to the BLK deflector 212. The DAC 114 is connected to the deflector 205. The DAC 116 is connected to the deflector 208.

In FIG. 1, the component parts which are necessary for demonstrating this 1st Embodiment are described. In the drawing apparatus 100, of course, the other structures normally required are included. In addition, in Fig. 1, a block calculator 122, 128, 132, mesh divider 124, area density calculator 126, and proximity effect correction calculator 130, the irradiation amount calculation unit 134, the irradiation time calculation unit 136, and the drawing data processing unit 138 are described so as to execute the processing of each function. For example, you may implement by hardware by an electrical circuit. Or you may implement by the combination of hardware and software by an electrical circuit. Or it may be a combination of such hardware and firmware.

The electron beam 200 is irradiated from the electron gun 201 which is an example of an irradiation part. The electron beam 200 from the electron gun 201 illuminates the entirety of the first aperture 203 having a rectangular, for example rectangular, hole by the illumination lens 202. Here, the electron beam 200 is first shaped into a rectangle, for example, a rectangle. And the electron beam 200 of the 1st aperture image which passed the 1st aperture 203 is projected on the 2nd aperture 206 by the projection lens 204. FIG. This position on the first aperture on the second aperture 206 may be deflected by the deflector 205 to change the beam shape and dimensions. As a result, the electron beam 200 is shaped. The electron beam 200 on the second aperture that has passed through the second aperture 206 is focused by the objective lens 207 and is deflected by the deflector 208. As a result, it irradiates to the desired position of the sample 101 on the XY stage 105 which moves continuously. Movement of the XY stage 105 is driven by the drive circuit 108. The deflection voltage of the deflector 205 is controlled by the deflection control circuit 110 and the DAC 114. The deflection voltage of the deflector 208 is controlled by the deflection control circuit 110 and the DAC 116.

Here, when the electron beam 200 on the sample 101 reaches the irradiation time t which causes the desired irradiation amount to enter the sample 101, it blanks as follows. That is, in order to prevent the electron beam 200 from being irradiated on the specimen 101 more than necessary, for example, the BLK aperture 214 is deflected by the electrostatic BLK deflector 212. Cut the electron beam 200 in. This prevents the electron beam 200 from reaching the sample 101 surface. The deflection voltage of the BLK deflector 212 is controlled by the deflection control circuit 110 and the DAC 112.

In the case of beam ON (blanking OFF), the electron beam 200 which came out from the electron gun 201 advances the track | orbit shown by the solid line in FIG. On the other hand, in the case of beam OFF (blanking ON), the electron beam 200 which came out from the electron gun 201 advances the track | orbit shown by the dotted line in FIG. In addition, the inside of the electron barrel 102 and the inside of the drawing chamber 103 are degassed by the vacuum pump which is not shown in figure, and it is set as the vacuum atmosphere which becomes pressure lower than atmospheric pressure.

Here, the inventors aim to improve efficiency by calculating a plurality of blocks having non-uniform sizes, which are the same number of shots, when calculating the pattern area density, and by calculating a plurality of blocks having uniform sizes, by calculating the proximity effect correction amount. I found something I could do. Hereinafter, the drawing method by the calculation method which aimed at efficiency is demonstrated.

Fig. 2 is a flowchart showing main parts of the drawing method in the first embodiment. First, the control calculator 120 reads drawing data from the magnetic disk device 109. And the following calculation is performed in each step using the drawing data.

In S (step) 102, as the block division process, the block region division section 122 (first block region division section) moves the drawing regions to a plurality of block regions with a non-uniform size so that the number of shots at the time of drawing is approximately equal to each other. It is divided into (first block area).

3 is a diagram showing an example of a block area in which the number of shots in the first embodiment is substantially the same. In Fig. 3, the chip region 10 serving as the drawing region is first virtually divided into a stripe frame region 12 (or also referred to as a stripe region). Each frame region 12 is divided into deflectable widths by a deflector 208. Each frame region 12 is divided into non-uniform sizes so that the number of shots at the time of drawing becomes approximately equal to each other. Each area divided into this nonuniform size becomes a block area 14. Here, in FIG. 3, each frame region 12 is divided in the longitudinal direction at the time of dividing into the block region 14, but the present invention is not limited thereto, and each frame region 12 may be further divided in a short direction. good.

In S104, the drawing data processing unit 138 converts the drawing data into shot data in an in-device format as the shot data generating step. At that time, conversion is performed for each block area 14.

In addition, the chip region 10 is virtually divided by the mesh dividing unit 124 into a plurality of small regions having a mesh shape at a predetermined size smaller than any of the plurality of block regions 14.

4 is a diagram illustrating an example in which arbitrary block regions in which the number of shots in the first embodiment are substantially equal to each other are mesh divided. The chip region 10 is classified into a plurality of small regions 20 having a mesh shape. In FIG. 4, an arbitrary block region 14 of the chip region 10 is illustrated. The mesh size is preferably 1/10 or less of the influence range σ of the proximity effect. For example, it is preferable to divide the mesh into grid dimensions of 1 µm or less in width and width.

In S106, as the area density calculation step, the area density calculation unit 126 uses the plurality of small areas 20 described above, and the pattern area density of each small area 20 located inside each block area 14. Compute ρ (x, y). Here, dispersion processing is performed for each of the block regions 14 in the area density calculation unit 126. Coordinates (x, y) are defined as, for example, the position of the small region 20 from the reference position of the block region 14. However, the present invention is not limited to this and may be defined as the position of the small region 20 from the reference position of the chip region 10. Or you may reference other positions. The pattern area density ρ (x, y) may be expressed as a value obtained by dividing the area of the figure located in the small area 20 by the area of the corresponding small area 20. Since the number of shots uses the block areas 14 substantially equal to each other, the calculation time between the block areas 14 can be made to the same degree. Then, the area density calculator 126 creates the pattern area density map 142 defined at the position of the small region 20 using the calculated pattern area density ρ (x, y). The pattern area density map 142 is stored in the magnetic disk device 140. However, when the proximity effect correction calculation is performed as described above, the calculation time between the block regions 14 cannot be set to the same degree, so that the following correspondence.

In S108, as the block region repartitioning process, the block region dividing unit 128 (second block region dividing unit) further divides the chip region 10 divided into the plurality of block regions 14 to be larger than the small region 20 again. Subdivided into a plurality of block regions 16 (second block regions) at one size. For example, it is divided into a size larger than the frame width.

Fig. 5 is a diagram showing an example of block areas of uniform size in the first embodiment. In Fig. 5, the chip region 10 serving as the drawing region is virtually divided into a stripe frame region 12 as described above. Each frame region 12 is divided into uniform sizes. Each area divided into this uniform size becomes a block area 16. Here, in FIG. 5, when dividing into the block regions 16, each frame region 12 is divided in the longitudinal direction. However, the present invention is not limited thereto, and each frame region 12 may be further divided in a short direction. good.

FIG. 6 is a diagram showing an example in which block regions of uniform size are mesh-divided in the first embodiment. FIG. Since the chip region 10 is classified into a plurality of small regions 20 having a mesh shape, the plurality of small regions 20 is also applied here. In FIG. 6, an arbitrary block region 16 of the chip region 10 is illustrated.

In S110, the proximity effect correction calculator 130 (correction dose calculator) is a proximity in each of the small regions 20 located inside the block region 16 for each block region 16 as the proximity effect correction calculation process. The effect correction dose Dp (x, y) is calculated using the pattern area density p (x, y) of the corresponding small region 20. Here, dispersion processing is performed for each block area 16 in the proximity effect correction calculation unit 130. Here, (x, y) is defined as the position of the small region 20 from the reference position of the block region 16, for example. However, the present invention is not limited to this and may be defined as the position of the small region 20 from the reference position of the chip region 10. Or you may reference other positions. The proximity effect correction calculator 130 reads the pattern area density map 142 from the magnetic disk device 140. The pattern area density ρ (x, y) of the corresponding small region 20 may be referred to from the pattern area density map 142. The coordinate proximity effect correction dosage Dp can be obtained by the following equation (1).

을 이용한 계수를 곱한 것이 근접 효과 보정 조사량 Dp으로서 정의할 수 있다. 여기에서 말하는 커널 함수란, 근접 효과량의 확대를 나타내는 함수로, 예를 들어 가우스 함수를 이용하면 적합하다. 균일한 사이즈의 블록 영역(16)을 사용하기 위해 블록 영역(16) 사이의 계산 시간을 동일한 정도로 할 수 있다. 그리고, 근접 효과 보정 계산부(130)는 계산된 근접 효과 보정 조사량 Dp(x, y)를 이용하여 소영역(20)의 위치로 정의된 근접 효과 보정 조사량 맵(144)을 작성한다. 그리고, 근접 효과 보정 조사량 맵(144)은 자기 디스크 장치(140)에 저장된다.Here g (x, y) represents the kernel function of the variation due to the proximity effect. As shown in Equation 1, the convolution integration of the pattern area density function and the kernel function is performed to calculate the proximity effect correction coefficient.

Multiplying the coefficient by using can be defined as the proximity effect correction dose Dp. The kernel function referred to here is a function representing the expansion of the proximity effect amount. For example, a Gaussian function is suitable. In order to use the block area 16 of uniform size, the calculation time between the block areas 16 can be made to the same degree. The proximity effect correction calculator 130 creates a proximity effect correction dose map 144 defined by the position of the small region 20 using the calculated proximity effect correction dose Dp (x, y). In addition, the proximity effect correction dose map 144 is stored in the magnetic disk device 140.

In S112, as the block region repartitioning process, the block region division unit 132 (third block region division unit) returns the chip region 10 divided into the plurality of block regions 16 to the original plurality of block regions 14. Repartition with While the coordinates of the proximity effect correction dosage map 144 are defined from the reference position of the block region 16, the shot data is defined as the block region 14, so the proximity effect correction dosage Dp (x, y) and the shot data are defined. It is inconvenient to take the consistency of. By re-dividing into the original plurality of block regions 14 and unifying the coordinate system, consistency can be easily obtained. However, in order to improve convenience here, it was subdivided, but it is not limited to this, It may be in the block area 16 state.

In S114, as a beam dose calculation step, the dose calculator 134 (beam dose calculator) corresponds to the beam dose D (x, y) of the electron beam 200 in each small region 20. FIG. It calculates using the proximity effect correction irradiation amount Dp (x, y) of the small area 20. The dose calculator 134 reads the proximity effect corrected dose map 144 from the magnetic disk device 140. The proximity effect correction dose Dp (x, y) of the corresponding small region 20 may be referred to from the proximity effect correction dose map 144. In this way, the beam dose D (x, y) is calculated using the proximity effect correction dose Dp (x, y) of each of the small regions 20 located inside the block region 14. The beam dose D (x, y) can be obtained by the following equation (2) using the reference dose D ₀ .

In S116, as the irradiation time calculating step, the irradiation time calculating unit 136 uses the current density J set to the irradiation amounts D (x, y) obtained for each of the small regions 20, and the irradiation time t (= irradiation amount D (x). , y) / current density J).

In S118, as a drawing process, the control calculator 120 outputs a signal to the deflection control circuit 110 so that beam irradiation to the sample 101 is turned off at the determined irradiation time t. In addition, the deflection control circuit 110 controls the BLK deflector 212 to deflect the electron beam 200 in accordance with the irradiation time t obtained according to this signal. Then, after irradiating the sample 101 with the desired dose D (x, y), the electron beam 200 deflected by the BLK deflector 212 is shielded by the BLK aperture 214 so as not to reach the sample 101. do. In this way, the drawing unit 150 irradiates the electron beam 200 with the beam irradiation amount calculated for each small region 20. As a result, a predetermined pattern is drawn on the sample 101.

As described above, different block areas are used in the pattern area density calculation and the proximity effect correction calculation. In the pattern area density calculation, the first block area in which the number of shots is substantially equal to each other is used. On the other hand, the proximity effect correction calculation uses a second block area of uniform size. This makes it possible to calculate the appropriate blocks respectively. Therefore, even if the number of shots is dense, the pattern area density calculation and the proximity effect correction calculation can be executed efficiently. As a result, both of the pattern area density calculations and the proximity effect correction calculations can avoid variations in the calculation time for each block area and can be made to the same degree. And even if the amount of data becomes large, the drawing apparatus 100 can process it at high speed.

In the above description, the processing contents or the operation contents of what is described as "parts" or "steps" can be configured by a program that can be operated by a computer. Or you may implement not only the program used as software but a combination of hardware and software. Or it may be a combination with firmware. In addition, when configured by a program, the program is recorded in a recording medium such as a magnetic disk device, a magnetic tape device, an FD, or a ROM (lead only memory). For example, it is recorded in the magnetic disk device 140.

The control calculator 120, which is a computer, is also a keyboard (K) which is an example of RAM (random access memory), ROM, magnetic disk (HD) device, and input means, which is an example of a storage device via a bus (not shown). / B), a mouse, a monitor serving as an example of the output means, a printer, or an external interface (I / F) serving as an example of the input output means, FD, DVD, CD or the like.

In the above, embodiment was described, referring the specific example. However, the present invention is not limited to these embodiments.

In addition, although description is abbreviate | omitted about the part which is not directly needed in description of this invention, such as an apparatus structure and a control method, you may select and use the required apparatus structure and a control method suitably. For example, although description is abbreviate | omitted about the control part structure which controls the drawing apparatus 100, of course, the required control part structure is selected suitably and used.

In addition, all charged particle beam imaging methods and apparatuses having elements of the present invention and which can be appropriately modified by those skilled in the art are included in the scope of the present invention.

Those skilled in the art will be able to make additional advantages and modifications. Accordingly, the present invention is not limited to the above-described descriptions and examples in a broad sense. Accordingly, various modifications may be made without departing from the spirit or scope defined by the appended claims and their equivalents.

1 is a conceptual diagram showing the configuration of a writing apparatus in a first embodiment.

Fig. 2 is a flowchart showing main parts of the drawing method in the first embodiment.

3 is a diagram showing an example of a block area in which the number of shots in the first embodiment is substantially the same.

Fig. 4 is a diagram showing an example in which arbitrary block regions are mesh-partitioned in which the number of shots in the first embodiment is approximately equal to each other.

Fig. 5 is a diagram showing an example of block areas of uniform size in the first embodiment.

Fig. 6 is a diagram showing an example in which block regions of uniform size are mesh-divided in the first embodiment.

7 is a conceptual view for explaining the operation of the conventional variable shaping electron beam drawing apparatus.

<Explanation of symbols for the main parts of the drawings>

100: drawing device

101: sample

102: electron barrel

150: drawing unit

160: control unit

Claims (5)

A first block region dividing section for dividing the drawing region into a plurality of first block regions at a size such that the number of shots of the shot irradiating the charged particle beam to the sample at the time of drawing is approximately equal to each other; The pattern area density of each small region located inside each of the first block regions is obtained by using a plurality of small regions virtually divided into meshes in a predetermined size smaller than any of the first block regions. Area density calculation part to calculate, A second block region dividing unit for dividing the drawing region divided into the plurality of first block regions into a plurality of second block regions with a uniform size larger than that of the small region; A correction dose calculation unit that calculates the proximity effect correction dose in each of the small regions located inside the second block region for each of the second block regions using the pattern area density already calculated in the same small region; A beam irradiation amount calculation unit that calculates the beam irradiation amount of the charged particle beam in each of the small regions in which the drawing region is virtually divided into a mesh shape by using the proximity effect correction irradiation amount already calculated in the same small region; The charged particle beam drawing apparatus characterized by including the drawing part which irradiates the charged particle beam with the beam irradiation amount computed for every said small area | region where the said drawing area | region was virtually divided into the mesh shape, and draws a predetermined pattern on a sample. The apparatus of claim 1, further comprising: a third block region dividing unit configured to subdivide the drawing region divided into the plurality of second block regions again into the plurality of first block regions, The beam irradiation amount calculating unit calculates the beam irradiation amount of each small region located inside the subdivided first block region by using the proximity effect correction irradiation amount already calculated in the same small region. Drawing device. The pattern area density map according to claim 1 or 2, wherein the area density calculator generates a pattern area density map for each of the small areas in which the drawing area is virtually divided into a mesh shape. The charged particle beam drawing apparatus, wherein the correction dose calculation unit refers to the pattern area density of a small region for calculating the proximity effect correction dose from the pattern area density map. The method according to claim 1, wherein the correction dose calculator generates a proximity effect correction dose map for each of the small regions in which the drawing region is virtually divided into a mesh shape, The charged particle beam writing apparatus, characterized in that the beam irradiation amount calculation unit refers to the proximity effect corrected irradiation amount of the small area for calculating the beam irradiation amount from the proximity effect corrected dose map. The drawing area is divided into a plurality of first block areas in a size such that the number of shots of the shot irradiating the charged particle beam to the sample at the time of drawing is approximately equal to each other, The pattern area density of each small region located inside each of the first block regions is calculated by using a plurality of small regions virtually divided into meshes in a predetermined size smaller than any of the first block regions. and, The drawing region divided into the plurality of first block regions is further divided into a plurality of second block regions with a uniform size larger than the small region, Proximity effect correction irradiation amount in each small region located inside the second block region for each of the second block regions is calculated using the pattern area density already calculated in the same small region, The beam irradiation amount of the charged particle beam in each said small area | region where the said drawing area | region was virtually divided into the mesh shape is computed using the proximity effect correction irradiation amount already computed in the same small area | region, The charged particle beam writing method, characterized in that a predetermined pattern is drawn on a sample by irradiating the charged particle beam with the beam irradiation amount calculated for each of the small areas where the drawing area is virtually divided into a mesh shape.

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