JP5647834B2 - Charged particle beam drawing apparatus and irradiation amount correction method thereof - Google Patents

Description

  The present invention provides a charged particle in which a pattern corresponding to a figure included in drawing data is drawn on the resist in the drawing area of the sample by irradiating the drawing area of the sample with the resist coated on the upper surface thereof. The present invention relates to a beam drawing apparatus and an irradiation amount correction method thereof.

Conventionally, a charged particle beam in which a pattern corresponding to a figure included in the drawing data is drawn on the resist in the drawing area of the sample by irradiating the drawing area of the sample with the resist coated on the upper surface. A drawing apparatus is known. Examples of this type of charged particle beam drawing apparatus include those described in, for example, paragraph 0025, paragraph 0026, paragraph 0027, paragraph 0041, and FIG. 2 of Patent Document 1 (Japanese Patent Laid-Open No. 2007-150243).
In the charged particle beam drawing apparatus described in Patent Document 1, a pattern area density map (see FIG. 7 of Patent Document 1) is created based on drawing data (circuit pattern data) (see FIG. 2 of Patent Document 1). . In the charged particle beam drawing apparatus described in Patent Document 1, a pattern area density-dependent pattern dimension variation amount L (x, y) is calculated (see paragraph 0044 of Patent Document 1), and a position-dependent pattern dimension variation amount P is calculated. (X, y) is calculated (see paragraph 0041, paragraph 0050 and FIG. 9 of Patent Document 1). Furthermore, in the charged particle beam drawing apparatus described in Patent Document 1, the pattern dimension variation amount is calculated from the pattern area density-dependent pattern dimension variation amount L (x, y) and the position-dependent pattern dimension variation amount P (x, y). The total value ΔCD (x, y) (= L (x, y) + P (x, y)) is calculated (see paragraph 0051 of FIG. 7 and FIG. 7).
Further, in the charged particle beam lithography apparatus described in Patent Document 1, the position-dependent base dose is calculated (see paragraphs 0053 and 0056 of Patent Document 1), and the position-dependent proximity effect correction coefficient η (x, y) is calculated. (See paragraphs 0054 and 0056 of Patent Document 1). Further, the proximity effect correction dose is calculated based on the position dependent base dose and the position dependent proximity effect correction coefficient η (x, y) (see Patent Document 1, paragraph 0055, paragraph 0056, FIG. 12 and FIG. 13). .

JP 2007-150243 A JP 2009-88313 A JP 2007-220728 A JP 2010-161099 A

For example, in a general charged particle beam drawing apparatus such as the charged particle beam drawing apparatus described in Paragraph 0030, Paragraph 0053, Paragraph 0054, FIG. 3, FIG. 4 and FIG. In consideration of the pattern area density U in (A), FIG. 4 (C) and FIG. 5 (A)), the global region GA (see FIG. 4 (A), FIG. 4 (C) and FIG. 5 (A)). ) Without considering the pattern area density V in (), it is possible to obtain appropriate values for the base dose (reference dose) and the proximity effect correction coefficient. As a result, for example, the pattern dimension CD resulting from the chromium etching loading effect On the basis of the idea that the fluctuation amount of the pattern can be sufficiently reduced by correcting the irradiation amount of the charged particle beam, the pattern in which the value of the pattern area density V in the global area GA is changed is changed. Relationship between the emission area density U and the pattern area density V and dose latitude DL (U, V, DL) has not been used in the calculation of base dose (standard dose) and the proximity effect correction coefficient.
However, in earnest research by the present inventors, in addition to the pattern area density U in the local region LA (see FIGS. 4A, 4C, and 5A), the global region GA (FIG. 4) is used. (A), FIG. 4 (C) and FIG. 5 (A)) are also taken into consideration, for example, paragraph 0030, paragraph 0053, paragraph 0054, FIG. 3, FIG. 4 and FIG. As a result, it is possible to obtain appropriate values of the base dose (reference dose) and the proximity effect correction coefficient as compared with a general charged particle beam drawing apparatus such as the charged particle beam drawing apparatus described in FIG. The variation amount of the pattern dimension CD due to the etching loading effect can be reduced not only by correcting the irradiation amount of the charged particle beam, but also due to an unknown phenomenon that has not been fully elucidated. It has been found that the variation of turn dimension CD can be reduced by the correction of the dose of the charged particle beam.

  That is, the present invention provides a charged particle beam drawing apparatus and an irradiation amount correction method thereof that can calculate appropriate values of the position-dependent base dose and the position-dependent proximity effect correction coefficient and reduce the variation amount of the pattern dimension CD. The purpose is to do.

According to one aspect of the present invention, a pattern corresponding to a figure included in drawing data is applied to the resist in the drawing region of the sample by irradiating a charged particle beam onto the drawing region of the sample with the resist coated on the upper surface. A drawing unit for drawing, a pattern area density calculating unit for calculating an area density of a pattern drawn by a charged particle beam based on drawing data, a pattern area density calculated by the pattern area density calculating unit, and a first influence distribution A first convolution integral calculation unit for executing a convolution integral calculation with a function, a pattern area density dependent pattern dimension variation amount based on a value obtained by the first convolution integral calculation unit, and a position dependent pattern dimension variation amount. Pattern size variation total value calculation unit that calculates the total value of patterns and the pattern calculated by the pattern area density calculation unit A second convolution integral calculation unit that performs a convolution integral calculation of the area density and the second influence distribution function, a pattern area density in the local region, a pattern area density in the global region around the local region, and a local region And a second convolution integral calculation unit based on a relationship between a pattern area density value in the local region and a pattern area density value in the global region. A position-dependent base dose proximity effect correction coefficient calculation unit that calculates a position-dependent base dose and a position-dependent proximity effect correction coefficient based on a value corresponding to the value of the pattern area density in the global region Position-dependent base dose and position-dependent base dose obtained by proximity effect correction coefficient calculator Comprising a proximity effect dose correction amount calculation unit for calculating a proximity effect dose correction amount based on the contact effect correction coefficient,
The dose latitude is a ratio of the variation amount of the pattern dimension to the change amount of the irradiation amount of the charged particle beam, and the charged particle beam drawing apparatus is provided.

According to another aspect of the present invention, a pattern corresponding to the figure included in the drawing data is applied to the drawing area of the sample by irradiating the drawing area of the sample with the resist coated on the upper surface with a charged particle beam. In the dose correction method of the charged particle beam drawing apparatus for drawing on the resist, the area density of the pattern drawn by the charged particle beam is calculated by the pattern area density calculation unit based on the drawing data, and is calculated by the pattern area density calculation unit. The convolution integral calculation of the pattern area density and the first influence distribution function is executed by the first convolution integral calculation unit, and the pattern area density dependent pattern dimension variation amount based on the value obtained by the first convolution integral calculation unit, and the position The total value of the pattern dimension fluctuation amount from the dependent pattern dimension fluctuation amount is calculated by the pattern dimension fluctuation amount total value calculation unit. And the convolution integral calculation of the pattern area density calculated by the pattern area density calculation unit and the second influence distribution function is executed by the second convolution integral calculation unit, and the pattern area density in the local region and the local area This is the relationship between the pattern area density in the surrounding global area and the dose latitude of the pattern drawn in the local area, and changes the pattern area density value in the local area and the pattern area density value in the global area. And the position-dependent base dose and the position-dependent proximity effect correction coefficient based on the values obtained by the second convolution integral calculation unit and corresponding to the value of the pattern area density in the global region. Position-dependent base dose proximity calculated by the position-dependent base dose proximity effect correction coefficient calculator The proximity effect dose correction amount based on the result correction coefficient calculating unit position-dependent basis dose and position-dependent proximity effect correction coefficient obtained by calculated by the proximity effect dose correction amount calculating unit,
The dose latitude is a ratio of the variation amount of the pattern dimension to the change amount of the irradiation amount of the charged particle beam, and the irradiation amount correction method of the charged particle beam drawing apparatus is provided.

  According to the present invention, it is possible to calculate appropriate values for the position-dependent base dose and the position-dependent proximity effect correction coefficient, and to reduce the variation amount of the pattern dimension CD.

1 is a configuration diagram of a charged particle beam drawing apparatus 10 of a first embodiment. FIG. 2 is a detailed view of a control computer 10b1 of the control unit 10b shown in FIG. It is a figure for demonstrating an example of the pattern P which can be drawn on the resist of the drawing area | region of the sample M by one shot of the charged particle beam 10a1b in the charged particle beam drawing apparatus 10 of 1st Embodiment. It is explanatory drawing of the pre-processing performed in order to obtain the relationship (U, V, DL) of the pattern area density U, the pattern area density V, and the dose latitude DL. It is explanatory drawing of the pre-processing performed in order to obtain the relationship (U, V, DL) of the pattern area density U, the pattern area density V, and the dose latitude DL. It is explanatory drawing of the pre-processing performed in order to obtain the relationship (U, V, DL) of the pattern area density U, the pattern area density V, and the dose latitude DL. It is explanatory drawing of the pre-processing performed in order to obtain the relationship (U, V, DL) of the pattern area density U, the pattern area density V, and the dose latitude DL. It is explanatory drawing of the pre-processing performed in order to obtain the relationship (U, V, DL) of the pattern area density U, the pattern area density V, and the dose latitude DL. It is explanatory drawing of the pre-processing performed in order to obtain the relationship (U, V, DL) of the pattern area density U, the pattern area density V, and the dose latitude DL. It is the figure which showed an example of the convolution integral map (V map) produced by the convolution integral calculation part 10b1a4. It is explanatory drawing of the process in the position dependence base dose proximity effect correction coefficient calculation part 10b1a5 of the charged particle beam drawing apparatus 10 of 3rd Embodiment.

A charged particle beam drawing apparatus according to a first embodiment of the present invention will be described below. FIG. 1 is a schematic configuration diagram of a charged particle beam drawing apparatus 10 according to the first embodiment. FIG. 2 is a detailed view of the control computer 10b1 of the control unit 10b shown in FIG. In the charged particle beam drawing apparatus 10 of the first embodiment, as shown in FIG. 1, for example, a charged particle beam 10a1b is applied to a drawing region of a sample M on which a resist such as a mask (blank) or a wafer is applied. Is provided with a drawing unit 10a for drawing a target pattern on the resist in the drawing region of the sample M.
In the charged particle beam drawing apparatus 10 of the first embodiment, for example, an electron beam is used as the charged particle beam 10a1b. However, in the charged particle beam drawing apparatus 10 of the second embodiment, instead of the charged particle beam 10a1b, for example, It is also possible to use a charged particle beam other than an electron beam such as an ion beam.

In the charged particle beam drawing apparatus 10 of the first embodiment, as shown in FIG. 1, for example, a charged particle gun 10a1a and deflectors 10a1c, 10a1d, which deflect the charged particle beam 10a1b irradiated from the charged particle gun 10a1a, 10a1e and 10a1f and a movable stage 10a2a on which a sample M to be drawn by the charged particle beam 10a1b deflected by the deflectors 10a1c, 10a1d, 10a1e, and 10a1f is placed are provided in the drawing unit 10a.
Specifically, in the charged particle beam drawing apparatus 10 according to the first embodiment, as shown in FIG. 1, for example, a movable stage in which a sample M is placed in a drawing chamber 10a2 constituting a part of the drawing unit 10a. 10a2a is arranged. For example, the movable stage 10a2a is configured to be movable in the left-right direction in FIG. 1 and in the front-back direction in FIG.
Furthermore, in the charged particle beam drawing apparatus 10 of the first embodiment, as shown in FIG. 1, for example, an optical barrel 10a1 constituting a part of the drawing unit 10a is provided with a charged particle gun 10a1a, a deflector 10a1c, 10a1d, 10a1e, 10a1f, lenses 10a1g, 10a1h, 10a1i, 10a1j, 10a1k, a first shaping aperture 10a1l, and a second shaping aperture 10a1m are arranged.

Specifically, in the charged particle beam drawing apparatus 10 of the first embodiment, as shown in FIGS. 1 and 2, for example, drawing data input to the control computer 10b1 is converted into a charged particle beam dose correction unit 10b1a. Can be directly transferred to the shot data generation unit 10b1g without intervening. In the charged particle beam drawing apparatus 10 of the first embodiment, for example, when drawing data is directly transferred to the shot data generation unit 10b1g without interposing the charged particle beam irradiation amount correction unit 10b1a, it is included in the drawing data. In order to draw a pattern corresponding to the figure (for example, see FIG. 3 of Patent Document 2 (Japanese Patent Laid-Open No. 2009-88313)) on the resist in the drawing region of the sample M, a certain base dose (reference dose) A charged particle beam 10a1b (see paragraph 0085 of Patent Document 3 (Japanese Patent Application Laid-Open No. 2007-220728)) is applied to the resist in the drawing region of the sample M from the optical barrel 10a1.
Further, in the charged particle beam drawing apparatus 10 of the first embodiment, as shown in FIGS. 1 and 2, for example, drawing data input to the control computer 10b1 is passed through the charged particle beam dose correction unit 10b1a. Later, it can be transferred to the shot data generation unit 10b1g. In the charged particle beam drawing apparatus 10 of the first embodiment, for example, when drawing data is transferred to the shot data generation unit 10b1g via the charged particle beam irradiation amount correction unit 10b1a, the figure included in the drawing data is displayed. In order to draw the corresponding pattern on the resist in the drawing region of the sample M, the charged particle beam 10a1b having the irradiation amount corrected by the charged particle beam irradiation amount correction unit 10b1a is transferred from the optical barrel 10a1 to the resist in the drawing region of the sample M. Irradiated.

Further, in the charged particle beam drawing apparatus 10 of the first embodiment, as shown in FIGS. 1 and 2, for example, a charged particle beam for drawing a pattern on a resist in a drawing region of the sample M by the shot data generation unit 10b1g. Shot data for irradiating 10a1b is generated.
Furthermore, in the charged particle beam drawing apparatus 10 of the first embodiment, as shown in FIGS. 1 and 2, for example, shot data generated by the shot data generation unit 10b1g is sent to the deflection control unit 10b1h. Further, for example, the deflectors 10a1c, 10a1d, 10a1e, and 10a1f are controlled by the deflection control unit 10b1h based on the shot data, and as a result, the charged particle beam 10a1b from the charged particle gun 10a1a is desired in the resist in the drawing region of the sample M. The position is irradiated.
Specifically, in the charged particle beam drawing apparatus 10 according to the first embodiment, as shown in FIGS. 1 and 2, for example, based on shot data generated by the shot data generation unit 10b1g, deflection is performed by the deflection control unit 10b1h. By controlling the blanking deflector 10a1c via the control circuit 10b2, the charged particle beam 10a1b irradiated from the charged particle gun 10a1a is transmitted through the opening 10a1l ′ (see FIG. 3) of the first shaping aperture 10a1l, for example. Whether the resist in the drawing region of the sample M is irradiated, or whether the resist in the drawing region of the sample M is blocked by a portion other than the opening 10a1l ′ of the first shaping aperture 10a1l is switched. That is, in the charged particle beam drawing apparatus 10 of the first embodiment, for example, the irradiation amount (irradiation time) of the charged particle beam 10a1b can be controlled by controlling the blanking deflector 10a1c.

Further, in the charged particle beam drawing apparatus 10 of the first embodiment, as shown in FIGS. 1 and 2, for example, based on the shot data generated by the shot data generation unit 10b1g, the deflection control circuit 10b1h performs a deflection control circuit. By controlling the beam size variable deflector 10a1d via 10b3, the charged particle beam 10a1b transmitted through the opening 10a1l ′ (see FIG. 3) of the first shaping aperture 10a1l is deflected by the beam size variable deflector 10a1d. The Next, a part of the charged particle beam 10a1b deflected by the beam size variable deflector 10a1d is transmitted through the opening 10a1m ′ (see FIG. 3) of the second shaping aperture 10a1m. That is, in the charged particle beam drawing apparatus 10 of the first embodiment, for example, by adjusting the amount and direction of deflection of the charged particle beam 10a1b by the beam size variable deflector 10a1d, the resist in the drawing region of the sample M is adjusted. The size, shape, and the like of the charged particle beam 10a1b irradiated to can be adjusted.
FIG. 3 is a diagram for explaining an example of a pattern P that can be drawn on the resist in the drawing region of the sample M by one shot of the charged particle beam 10a1b in the charged particle beam drawing apparatus 10 of the first embodiment. is there. In the charged particle beam drawing apparatus 10 of the first embodiment, as shown in FIGS. 1 and 3, for example, a pattern P (see FIG. 3) is drawn on the resist in the drawing region of the sample M by the charged particle beam 10a1b. Sometimes, a part of the charged particle beam 10a1b irradiated from the charged particle gun 10a1a (see FIG. 1) is transmitted through, for example, a square opening 10a1l ′ (see FIG. 3) of the first shaping aperture 10a1l. As a result, the horizontal sectional shape of the charged particle beam 10a1b transmitted through the opening 10a1l ′ of the first shaping aperture 10a1l becomes, for example, a substantially square shape. Next, a part of the charged particle beam 10a1b transmitted through the opening 10a1l ′ of the first shaping aperture 10a1l is transmitted through the opening 10a1m ′ (see FIG. 3) of the second shaping aperture 10a1m.

In the charged particle beam drawing apparatus 10 of the first embodiment, as shown in FIGS. 1 and 3, for example, the charged particle beam transmitted through the opening 10a1l ′ (see FIG. 3) of the first shaping aperture 10a1l. The horizontal cross-sectional shape of the charged particle beam 10a1b transmitted through the opening 10a1m ′ (see FIG. 3) of the second shaping aperture 10a1m by deflecting 10a1b by the beam size variable deflector 10a1d (see FIG. 1) is, for example, rectangular ( A square or a rectangle), for example, a triangle.
Furthermore, in the charged particle beam drawing apparatus 10 of the first embodiment, as shown in FIGS. 1 and 3, for example, the charged particle beam transmitted through the opening 10a1m ′ (see FIG. 3) of the second shaping aperture 10a1m. 10a1b is continuously irradiated to a predetermined position of the resist in the drawing region of the sample M for a predetermined irradiation time (that is, by irradiating a predetermined position of the resist in the drawing region of the sample M by a predetermined irradiation amount). A pattern P (see FIG. 3) having substantially the same shape as the horizontal sectional shape of the charged particle beam 10a1b transmitted through the opening 10a1m ′ (see FIG. 3) of the second shaping aperture 10a1m is drawn on the resist in the drawing region of the sample M. can do.
That is, in the charged particle beam drawing apparatus 10 of the first embodiment, as shown in FIGS. 1 and 3, the charged particle beam 10a1b transmitted through the opening 10a1l ′ (see FIG. 3) of the first shaping aperture 10a1l is provided. By controlling the amount and direction deflected by the beam size variable deflector 10a1d (see FIG. 1) by the deflection control unit 10b1h (see FIG. 2), for example, a roughly square pattern P as shown in FIG. It is possible to draw on the resist in the drawing region of the sample M with one shot of the particle beam 10a1b.
Further, in the charged particle beam drawing apparatus 10 of the first embodiment, as shown in FIG. 3, for example, by executing a shot of the charged particle beam 10a1b for drawing a roughly square pattern P a plurality of times, a predetermined line is obtained. A linear pattern PL having a width W can be drawn on the resist in the drawing region of the sample M.

Furthermore, in the charged particle beam drawing apparatus 10 of the first embodiment, as shown in FIGS. 1 and 2, for example, based on the shot data generated by the shot data generation unit 10b1g, the deflection control circuit 10b1h performs a deflection control circuit. By controlling the main deflector 10a1e via 10b4, the charged particle beam 10a1b transmitted through the opening 10a1m ′ (see FIG. 3) of the second shaping aperture 10a1m is deflected by the main deflector 10a1e.
Further, in the charged particle beam drawing apparatus 10 of the first embodiment, as shown in FIGS. 1 and 2, for example, based on the shot data generated by the shot data generation unit 10b1g, the deflection control circuit 10b1h performs a deflection control circuit. By controlling the sub deflector 10a1f via 10b5, the charged particle beam 10a1b deflected by the main deflector 10a1e is further deflected by the sub deflector 10a1f. In other words, in the charged particle beam drawing apparatus 10 of the first embodiment, for example, the amount and direction of the charged particle beam 10a1b deflected by the main deflector 10a1e and the sub deflector 10a1f are adjusted to draw the sample M. The irradiation position of the charged particle beam 10a1b irradiated to the resist in the region can be adjusted.
Furthermore, in the charged particle beam drawing apparatus 10 of the first embodiment, as shown in FIGS. 1 and 2, for example, based on shot data generated by the shot data generation unit 10b1g, a stage control circuit is provided by the stage control unit 10b1i. The movement of the movable stage 10a2a is controlled via 10b6.

Specifically, in the charged particle beam drawing apparatus 10 of the first embodiment, as shown in FIG. 2, when drawing data is transferred to the shot data generation unit 10b1g via the charged particle beam irradiation amount correction unit 10b1a, When the irradiation amount of the charged particle beam 10a1b (see FIG. 1) is corrected by the charged particle beam irradiation amount correction unit 10b1a, the pattern area density in the local region LA (the region surrounded by the broken line in FIG. 4A) U, the pattern area density V in the global area GA around the local area LA (area surrounded by the one-dot chain line in FIG. 4A), and the pattern PL drawn in the local area LA (FIG. 4 ( The relationship (U, V, DL) (see FIG. 4B, etc.) with the dose latitude DL is used.
Therefore, in the charged particle beam drawing apparatus 10 of the first embodiment, the local region LA used for correcting the irradiation amount of the charged particle beam 10a1b (see FIG. 1) by the charged particle beam irradiation amount correction unit 10b1a (see FIG. 2). (See FIG. 4A, etc.) The pattern area density U in the global area GA (see FIG. 4A, etc.), and the pattern PL drawn in the local area LA (FIG. 4). In order to obtain the relationship (U, V, DL) (see FIG. 4B, etc.) with the dose latitude DL (see (A) etc.), for example, pre-processing as shown in FIGS. It is executed by the developer / manufacturer of the particle beam drawing apparatus 10 or the user of the charged particle beam drawing apparatus 10 using the drawing unit 10a (see FIG. 1) of the charged particle beam drawing apparatus 10 of the first embodiment. .

  4 to 9 show the pattern area density U in the local area LA used for correcting the irradiation amount of the charged particle beam 10a1b, the pattern area density V in the global area GA around the local area LA, and the local area LA. FIG. 8 is a diagram for explaining preprocessing executed to obtain a relationship (U, V, DL) of a pattern PL drawn in FIG.

Specifically, in the example shown in FIGS. 4A and 4B, first, as shown in FIG. 4A, a predetermined target line width W such as 0.1 μm is set. The linear pattern PL thus formed is drawn in the local area LA of the preprocessing sample M by, for example, a charged particle beam 10a1b (see FIG. 1) having a first irradiation amount. At this time, for example, the pattern area density U in the local region LA of several tens of μm □ is set to 0% (U = 0.0), and the pattern area in the global region GA of, for example, several mm □ around the local region LA Density V is set to 0% (V = 0.0). Next, the pattern dimension CD (specifically, the actual line width W) of the drawn linear pattern PL is measured by, for example, an SEM (scanning electron microscope) or the like, for example, after execution of a chromium etching process. . As a result, the first point in the graph of FIG. 4B showing the relationship between the irradiation amount of the charged particle beam 10a1b and the pattern dimension CD (actual line width W) of the linear pattern PL is obtained.
In the example shown in FIGS. 4A and 4B, as shown in FIG. 4A, the linear pattern PL set to the same target line width W has the first dose. The charged particle beam 10a1b (see FIG. 1) having a second irradiation amount different from the above is drawn in the local area LA of the preprocessing sample M. Also at this time, the pattern area density U in the local area LA is set to 0% (U = 0.0), and the pattern area density V in the global area GA is set to 0% (V = 0.0). . Next, the pattern dimension CD (actual line width W) of the drawn linear pattern PL is measured, for example, after execution of a chromium etching process. As a result, the second point in the graph of FIG. 4B showing the relationship between the irradiation amount of the charged particle beam 10a1b and the pattern dimension CD (actual line width W) of the linear pattern PL is obtained. Next, by calculating the inclination of the line connecting the first point, the second point, etc. in the graph of FIG. 4B, the “pattern dimension CD corresponding to the change in the irradiation amount of the charged particle beam 10a1b corresponding to the inclination” It is possible to obtain a dose latitude DL which is “the ratio of the fluctuation amount of (actual line width W)”.
That is, in the example shown in FIGS. 4A and 4B, the pattern area density U in the local area LA, the pattern area density V in the global area GA, and the local area LA are obtained by the above-described preprocessing. (U, V, DL) = (0.0, 0.0, 0.6) (see FIG. 4B) with the dose latitude DL of the pattern PL drawn in FIG.

  In the charged particle beam drawing apparatus 10 of the first embodiment, the pattern area density U, the pattern area density V, and the dose latitude are used to correct the irradiation amount of the charged particle beam 10a1b by the charged particle beam irradiation amount correction unit 10b1a. The relationship between the DL (U, V, DL) (see FIG. 4B, etc.) is not sufficient, and the relationship between the pattern area density U, the pattern area density V, and the dose latitude DL (see FIG. 4B) ( U, V, DL) (see FIG. 4B, FIG. 4D, etc.) is required. Therefore, in the charged particle beam drawing apparatus 10 of the first embodiment, not only the preprocessing shown in FIGS. 4A and 4B is performed, but also, for example, FIGS. 4C and 4D. The preprocessing shown in FIG.

Specifically, in the example shown in FIGS. 4C and 4D, as shown in FIG. 4C, a linear shape set to a predetermined target line width W such as 0.1 μm, for example. The pattern PL is drawn in the local region LA of the pretreatment sample M by, for example, the charged particle beam 10a1b (see FIG. 1) of the third irradiation amount. At this time, the pattern area density U in the local area LA is set to 50% (U = 0.5), for example, and the pattern area density V in the global area GA is set to 0% (V = 0.0). . Next, the pattern dimension CD (actual line width W) of the drawn linear pattern PL is measured, for example, after execution of a chromium etching process. As a result, the first point in the graph of FIG. 4D showing the relationship between the irradiation amount of the charged particle beam 10a1b and the pattern dimension CD (actual line width W) of the linear pattern PL is obtained.
In the example shown in FIGS. 4C and 4D, as shown in FIG. 4C, the linear pattern PL set to the same target line width W is the third dose. The charged particle beam 10a1b (see FIG. 1) having a fourth irradiation amount different from the above is drawn in the local region LA of the preprocessing sample M. Also at this time, the pattern area density U in the local area LA is set to 50% (U = 0.5), for example, and the pattern area density V in the global area GA is set to 0% (V = 0.0). The Next, the pattern dimension CD (actual line width W) of the drawn linear pattern PL is measured, for example, after execution of a chromium etching process. As a result, the second point in the graph of FIG. 4D showing the relationship between the irradiation amount of the charged particle beam 10a1b and the pattern dimension CD (actual line width W) of the linear pattern PL is obtained. Next, by calculating the slope of a line connecting the first point, the second point, etc. in the graph of FIG. 4D, a dose latitude DL corresponding to the slope can be obtained.
That is, in the example shown in FIGS. 4C and 4D, the relationship (U, V, DL) = (0.5, 0.0, 0.9) (FIG. 4 ( D) can be obtained.

  In the charged particle beam drawing apparatus 10 of the first embodiment, in order to correct the irradiation amount of the charged particle beam 10a1b by the charged particle beam irradiation amount correction unit 10b1a, for example, the pattern area density U in the local region LA is, for example, As shown in FIG. 4B and FIG. 4D, as in the relationship (U, V, DL) when 100% (U = 1.0) is set (see FIG. 5B) A relationship (U, V, DL) (see FIG. 5B) in a different case is also required. Therefore, in the charged particle beam drawing apparatus 10 of the first embodiment, not only the preprocessing shown in FIGS. 4A, 4B, 4C, and 4D is executed. For example, the preprocessing shown in FIGS. 5A and 5A is executed.

Specifically, in the example shown in FIGS. 5A and 5B, as shown in FIG. 5A, a linear shape set to a predetermined target line width W such as 0.1 μm, for example. The pattern PL is drawn in the local area LA of the pretreatment sample M by, for example, the charged particle beam 10a1b (see FIG. 1) of the fifth irradiation amount. At this time, the pattern area density U in the local area LA is set to 100% (U = 1.0), and the pattern area density V in the global area GA is set to 0% (V = 0.0). Next, the pattern dimension CD (actual line width W) of the drawn linear pattern PL is measured, for example, after execution of a chromium etching process. As a result, the first point in the graph of FIG. 5B showing the relationship between the irradiation amount of the charged particle beam 10a1b and the pattern dimension CD (actual line width W) of the linear pattern PL is obtained.
In the example shown in FIGS. 5A and 5B, as shown in FIG. 5A, the linear pattern PL set to the same target line width W has the fifth irradiation amount. The charged particle beam 10a1b (see FIG. 1) with a sixth irradiation amount different from the above is drawn in the local area LA of the preprocessing sample M. Also at this time, the pattern area density U in the local area LA is set to 100% (U = 1.0), and the pattern area density V in the global area GA is set to 0% (V = 0.0). . Next, the pattern dimension CD (actual line width W) of the drawn linear pattern PL is measured, for example, after execution of a chromium etching process. As a result, the second point in the graph of FIG. Next, by calculating the slope of a line connecting the first point and the second point in the graph of FIG. 5B, a dose latitude DL corresponding to the slope can be obtained.
That is, in the example shown in FIGS. 5A and 5B, the relationship (U, V, DL) = (1.0, 0.0, 1.2) (FIG. 5 ( B) can be obtained.

In other words, by executing the preprocessing shown in FIGS. 4 and 5, three sets of relationships (U, V, DL)
= (0.0, 0.0, 0.6) (see FIG. 4B)
= (0.5, 0.0, 0.9) (see FIG. 4D)
= (1.0, 0.0, 1.2) (see FIG. 5B)
Can be obtained.
For example, in a general charged particle beam drawing apparatus such as the charged particle beam drawing apparatus described in Paragraph 0030, Paragraph 0053, Paragraph 0054, FIG. 3, FIG. 4 and FIG. In consideration of the pattern area density U in (A), FIG. 4 (C) and FIG. 5 (A)), the global region GA (see FIG. 4 (A), FIG. 4 (C) and FIG. 5 (A)). ) Without considering the pattern area density V in (), it is possible to obtain appropriate values for the base dose (reference dose) and the proximity effect correction coefficient. As a result, for example, the pattern dimension CD resulting from the chromium etching loading effect Based on the idea that the fluctuation amount of (actual line width W) can be sufficiently reduced by correcting the irradiation amount of the charged particle beam 10a1b, the pattern area in the global region GA The relationship (U, V, DL) between the pattern area density U, the pattern area density V, and the dose latitude DL with varying values of degree V is used to calculate the base dose (reference dose) and the proximity effect correction coefficient. It wasn't.

That is, for example, in a general charged particle beam drawing apparatus such as the charged particle beam drawing apparatus described in Paragraph 0030, Paragraph 0053, Paragraph 0054, FIG. 3, FIG. 4 and FIG. Pre-processing as shown in FIG. 5 is executed, for example, the relationship (U, DL) between the pattern area density U in the three sets of local areas LA and the dose latitude DL of the pattern PL drawn in the local areas LA
= (0.0, 0.6) (see FIG. 4B)
= (0.5, 0.9) (see FIG. 4D)
= (1.0, 1.2) (see FIG. 5B)
Thus, appropriate values of the base dose (reference dose) and the proximity effect correction coefficient can be obtained. As a result, for example, the variation amount of the pattern dimension CD caused by the chrome etching loading effect can be obtained. It was thought that it can be sufficiently reduced by correcting the dose.
However, in earnest research by the present inventors, in addition to the pattern area density U in the local region LA (see FIGS. 4A, 4C, and 5A), the global region GA (FIG. 4) is used. (A), FIG. 4 (C) and FIG. 5 (A)) are also taken into consideration, for example, paragraph 0030, paragraph 0053, paragraph 0054, FIG. 3, FIG. 4 and FIG. As a result, it is possible to obtain appropriate values of the base dose (reference dose) and the proximity effect correction coefficient as compared with a general charged particle beam drawing apparatus such as the charged particle beam drawing apparatus described in FIG. Not only can the variation of the pattern dimension CD (actual line width W) due to the etching loading effect be reduced by correcting the irradiation amount of the charged particle beam 10a1b, but it is still fully elucidated. It has been found that the variation of the pattern dimension CD (actual line width W) due to the absence unknown phenomenon can be reduced due to the correction of the dose of the charged particle beam 10A1b.
Therefore, in the charged particle beam drawing apparatus 10 of the first embodiment, the pattern area density U and the pattern area density V obtained by changing the value of the pattern area density V in the global region GA (see FIG. 6A and the like) In order to obtain the relationship (U, V, DL) (see FIG. 6B, etc.) with the dose latitude DL, for example, preprocessing as shown in FIGS. It is executed by the manufacturer or the user of the charged particle beam drawing apparatus 10 using the drawing unit 10a (see FIG. 1) of the charged particle beam drawing apparatus 10 of the first embodiment.

Specifically, in the example shown in FIGS. 6 (A) and 6 (B), as shown in FIG. 6 (A), for example, a linear shape set to a predetermined target line width W such as 0.1 μm. The pattern PL is drawn in the local area LA of the pretreatment sample M by, for example, a charged particle beam 10a1b (see FIG. 1) having a seventh irradiation amount. At this time, the pattern area density U in the local area LA is set to 0% (U = 0.0), and the pattern area density V in the global area GA is set to 20% (V = 0.2), for example. . Next, the pattern dimension CD (actual line width W) of the drawn linear pattern PL is measured, for example, after execution of a chromium etching process. As a result, the first point in the graph of FIG. 6B showing the relationship between the irradiation amount of the charged particle beam 10a1b and the pattern dimension CD (actual line width W) of the linear pattern PL is obtained.
In the example shown in FIGS. 6A and 6B, as shown in FIG. 6A, the linear pattern PL set to the same target line width W has a seventh irradiation amount. The charged particle beam 10a1b (see FIG. 1) having an eighth irradiation amount different from the above is drawn in the local area LA of the preprocessing sample M. Also at this time, the pattern area density U in the local area LA is set to 0% (U = 0.0), and the pattern area density V in the global area GA is set to 20% (V = 0.2), for example. The Next, the pattern dimension CD (actual line width W) of the drawn linear pattern PL is measured, for example, after execution of a chromium etching process. As a result, the second point in the graph of FIG. 6B is obtained. Next, by calculating the slope of a line connecting the first point and the second point in the graph of FIG. 6B, a dose latitude DL corresponding to the slope can be obtained.
That is, in the example shown in FIGS. 6A and 6B, the relationship (U, V, DL) = (0.0, 0.2, 0.62) (FIG. 6 ( B) can be obtained.

In the example shown in FIGS. 6C and 6D, as shown in FIG. 6C, a linear pattern PL set to a predetermined target line width W such as 0.1 μm, for example. Is drawn in the local area LA of the pretreatment sample M by, for example, a charged particle beam 10a1b (see FIG. 1) of the ninth irradiation amount. At this time, the pattern area density U in the local area LA is set to 50% (U = 0.5), for example, and the pattern area density V in the global area GA is set to 20% (V = 0.2), for example. The Next, the pattern dimension CD (actual line width W) of the drawn linear pattern PL is measured, for example, after execution of a chromium etching process. As a result, the first point in the graph of FIG. 6D showing the relationship between the irradiation amount of the charged particle beam 10a1b and the pattern dimension CD (actual line width W) of the linear pattern PL is obtained.
Further, in the example shown in FIGS. 6C and 6D, as shown in FIG. 6C, the linear pattern PL set to the same target line width W is the ninth dose. A charged particle beam 10a1b (see FIG. 1) with a tenth irradiation amount different from FIG. 1 is drawn in the local region LA of the preprocessing sample M. Also at this time, the pattern area density U in the local area LA is set to 50% (U = 0.5), for example, and the pattern area density V in the global area GA is set to 20% (V = 0.2), for example. Is done. Next, the pattern dimension CD (actual line width W) of the drawn linear pattern PL is measured, for example, after execution of a chromium etching process. As a result, the second point in the graph of FIG. 6D is obtained. Next, by calculating the slope of a line connecting the first point, the second point, etc. in the graph of FIG. 6D, a dose latitude DL corresponding to the slope can be obtained.
That is, in the examples shown in FIGS. 6C and 6D, the relationship (U, V, DL) = (0.5, 0.2, 0.93) (FIG. 6 ( D) can be obtained.

Further, in the example shown in FIGS. 7A and 7B, as shown in FIG. 7A, a linear pattern PL set to a predetermined target line width W such as 0.1 μm, for example. Is drawn in the local area LA of the sample M for pretreatment by, for example, the charged particle beam 10a1b (see FIG. 1) of the eleventh irradiation amount. At this time, the pattern area density U in the local area LA is set to 100% (U = 1.0), and the pattern area density V in the global area GA is set to 20% (V = 0.2), for example. . Next, the pattern dimension CD (actual line width W) of the drawn linear pattern PL is measured, for example, after execution of a chromium etching process. As a result, the first point in the graph of FIG. 7B showing the relationship between the irradiation amount of the charged particle beam 10a1b and the pattern dimension CD (actual line width W) of the linear pattern PL is obtained.
Further, in the example shown in FIGS. 7A and 7B, as shown in FIG. 7A, the linear pattern PL set to the same target line width W is the eleventh irradiation amount. The image is drawn in the local area LA of the pretreatment sample M by a charged particle beam 10a1b (see FIG. 1) having a twelfth irradiation amount different from FIG. At this time, the pattern area density U in the local area LA is set to 100% (U = 1.0), and the pattern area density V in the global area GA is set to 20% (V = 0.2), for example. The Next, the pattern dimension CD (actual line width W) of the drawn linear pattern PL is measured, for example, after execution of a chromium etching process. As a result, the second point in the graph of FIG. 7B is obtained. Next, by calculating the slope of a line connecting the first point and the second point in the graph of FIG. 7B, a dose latitude DL corresponding to the slope can be obtained.
That is, in the examples shown in FIGS. 7A and 7B, the relationship (U, V, DL) = (1.0, 0.2, 1.22) (FIG. 7 ( B) can be obtained.

Further, in the example shown in FIGS. 8A and 8B, as shown in FIG. 8A, a linear pattern PL set to a predetermined target line width W such as 0.1 μm, for example. Is drawn in the local area LA of the pretreatment sample M by, for example, a charged particle beam 10a1b (see FIG. 1) of a thirteenth dose. At this time, the pattern area density U in the local area LA is set to 0% (U = 0.0), and the pattern area density V in the global area GA is set to 80% (V = 0.8), for example. . Next, the pattern dimension CD (actual line width W) of the drawn linear pattern PL is measured, for example, after execution of a chromium etching process. As a result, the first point in the graph of FIG. 8B showing the relationship between the irradiation amount of the charged particle beam 10a1b and the pattern dimension CD (actual line width W) of the linear pattern PL is obtained.
In the example shown in FIGS. 8A and 8B, as shown in FIG. 8A, the linear pattern PL set to the same target line width W has a thirteenth dose. The charged particle beam 10a1b (see FIG. 1) with a 14th irradiation amount different from FIG. 1 is used to draw in the local region LA of the preprocessing sample M. At this time, the pattern area density U in the local area LA is set to 0% (U = 0.0), and the pattern area density V in the global area GA is set to 80% (V = 0.8), for example. The Next, the pattern dimension CD (actual line width W) of the drawn linear pattern PL is measured, for example, after execution of a chromium etching process. As a result, the second point in the graph of FIG. 8B is obtained. Next, by calculating the slope of a line connecting the first point and the second point in the graph of FIG. 8B, a dose latitude DL corresponding to the slope can be obtained.
That is, in the example shown in FIGS. 8A and 8B, the relationship (U, V, DL) = (0.0, 0.8, 0.65) (FIG. 8 ( B) can be obtained.

In the example shown in FIGS. 8C and 8D, as shown in FIG. 8C, a linear pattern PL set to a predetermined target line width W such as 0.1 μm, for example. Is drawn in the local area LA of the pretreatment sample M by, for example, a charged particle beam 10a1b (see FIG. 1) of the fifteenth irradiation amount. At this time, the pattern area density U in the local area LA is set to 50% (U = 0.5), for example, and the pattern area density V in the global area GA is set to 80% (V = 0.8), for example. The Next, the pattern dimension CD (actual line width W) of the drawn linear pattern PL is measured, for example, after execution of a chromium etching process. As a result, the first point in the graph of FIG. 8D showing the relationship between the irradiation amount of the charged particle beam 10a1b and the pattern dimension CD (actual line width W) of the linear pattern PL is obtained.
In the example shown in FIGS. 8C and 8D, as shown in FIG. 8C, the linear pattern PL set to the same target line width W has the fifteenth dose. The charged particle beam 10a1b (see FIG. 1) with a 16th irradiation dose different from FIG. 1 is drawn in the local area LA of the preprocessing sample M. Also at this time, the pattern area density U in the local area LA is set to 50% (U = 0.5), for example, and the pattern area density V in the global area GA is set to 80% (V = 0.8), for example. Is done. Next, the pattern dimension CD (actual line width W) of the drawn linear pattern PL is measured, for example, after execution of a chromium etching process. As a result, the second point in the graph of FIG. 8D is obtained. Next, by calculating the slope of a line connecting the first point and the second point in the graph of FIG. 8D, a dose latitude DL corresponding to the slope can be obtained.
In other words, in the example shown in FIGS. 8C and 8D, the relationship (U, V, DL) = (0.5, 0.8, 1.0) (FIG. 8 ( D) can be obtained.

Further, in the example shown in FIGS. 9A and 9B, as shown in FIG. 9A, a linear pattern PL set to a predetermined target line width W such as 0.1 μm, for example. Is drawn in the local area LA of the pretreatment sample M by, for example, a charged particle beam 10a1b (see FIG. 1) of the seventeenth irradiation amount. At this time, the pattern area density U in the local area LA is set to 100% (U = 1.0), and the pattern area density V in the global area GA is set to 80% (V = 0.8), for example. . Next, the pattern dimension CD (actual line width W) of the drawn linear pattern PL is measured, for example, after execution of a chromium etching process. As a result, the first point in the graph of FIG. 9B showing the relationship between the irradiation amount of the charged particle beam 10a1b and the pattern dimension CD (actual line width W) of the linear pattern PL is obtained.
In the example shown in FIGS. 9A and 9B, as shown in FIG. 9A, the linear pattern PL set to the same target line width W has a seventeenth irradiation amount. The charged particle beam 10a1b (see FIG. 1) with an 18th irradiation amount different from the above is drawn in the local area LA of the preprocessing sample M. Also at this time, the pattern area density U in the local area LA is set to 100% (U = 1.0), and the pattern area density V in the global area GA is set to 80% (V = 0.8), for example. The Next, the pattern dimension CD (actual line width W) of the drawn linear pattern PL is measured, for example, after execution of a chromium etching process. As a result, the second point in the graph of FIG. 9B is obtained. Next, by calculating the slope of a line connecting the first point and the second point in the graph of FIG. 9B, a dose latitude DL corresponding to the slope can be obtained.
That is, in the examples shown in FIGS. 9A and 9B, the relationship (U, V, DL) = (1.0, 0.8, 1.3) (FIG. 9 ( B) can be obtained.
Specifically, in the example shown in FIGS. 4A to 9B, for example, the same pretreatment sample M is used in the pretreatment described above. More specifically, FIG. 4 (A), FIG. 4 (C), FIG. 5 (A), FIG. 6 (A), FIG. 6 (C), FIG. 7 (A), FIG. The pattern PL shown in FIG. 9C and FIG. 9A is drawn at a plurality of locations on the same pretreatment sample M by charged particle beams 10a1b (see FIG. 1) having different irradiation amounts. Next, for example, a chrome etching process or the like is performed on the pretreatment sample M, and then a measurement process is performed.

In other words, nine sets of pattern area density U, pattern area density V, and dose in which the value of pattern area density U and the value of pattern area density V are changed by performing the preprocessing shown in FIGS. Relationship with latitude DL (U, V, DL)
= (0.0, 0.0, 0.6) (see FIG. 4B)
= (0.5, 0.0, 0.9) (see FIG. 4D)
= (1.0, 0.0, 1.2) (see FIG. 5B)
= (0.0, 0.2, 0.62) (see FIG. 6B)
= (0.5, 0.2, 0.93) (see FIG. 6D)
= (1.0, 0.2, 1.22) (see FIG. 7B)
= (0.0, 0.8, 0.65) (see FIG. 8B)
= (0.5, 0.8, 1.0) (see FIG. 8D)
= (1.0, 0.8, 1.3) (see FIG. 9B)
Can be obtained.
Specifically, in the charged particle beam drawing apparatus 10 of the first embodiment, as shown in FIG. 2, when drawing data is transferred to the shot data generation unit 10b1g via the charged particle beam irradiation amount correction unit 10b1a. For example, nine sets of relationships (U, V, DL) in which the value of the pattern area density U and the value of the pattern area density V are changed are charged particle beam irradiation amount correction units 10b1a by the user of the charged particle beam drawing apparatus 10. Is used to correct the irradiation amount of the charged particle beam 10a1b (see FIG. 1).
In the modified example of the charged particle beam drawing apparatus 10 according to the first embodiment, for example, nine sets of relationships (U, V, DL) in which the value of the pattern area density U and the value of the pattern area density V are changed are used instead. The developer / manufacturer of the charged particle beam drawing apparatus 10 can be incorporated in the charged particle beam irradiation amount correction unit 10b1a in advance and used for correcting the irradiation amount of the charged particle beam 10a1b (see FIG. 1).

In the charged particle beam drawing apparatus 10 of the first embodiment, as shown in FIG. 2, when the charged particle beam 10a1b (see FIG. 1) irradiation amount correction processing by the charged particle beam irradiation amount correction unit 10b1a is started. First, the area density ρ (x) (x is a position vector) of the pattern P (see FIG. 3) drawn by the charged particle beam 10a1b (see FIG. 3) is used as the drawing data by the pattern area density calculating unit 10b1a2. For example, a pattern area density map corresponding to the entire drawing region of the sample M (see FIG. 3) is created.
Then, the charged particle beam drawing apparatus 10 of the first embodiment, as shown in FIG. 2, the convolution of the impact distribution function kappa _L pattern area density calculated by the pattern area density calculation unit 10b1a2 ρ (x) integral The calculation (∫ρ (x ′) κ _L (xx ′) dx ′) is executed by the convolution integral calculation unit 10b1a2, and for example, a convolution integral map (W corresponding to the entire drawing region of the sample M (see FIG. 3)). Map) is created.
Specifically, in the charged particle beam drawing apparatus 10 of the first embodiment, the influence distribution function kappa _L and to for example a Gaussian distribution is used, the effect distribution function kappa _L is the development and manufacturer of the charged particle beam drawing apparatus 10 The charged particle beam dose correction unit 10b1a is incorporated in advance. Furthermore, in the charged particle beam drawing apparatus 10 according to the first embodiment, the user of the charged particle beam drawing apparatus 10 can use an arbitrary Gaussian distribution instead of the Gaussian distribution previously installed by the developer / manufacturer of the charged particle beam drawing apparatus 10. it can be used a function as impact distribution function kappa _L.

Next, in the charged particle beam drawing apparatus 10 according to the first embodiment, as shown in FIG. 2, a value (値 ρ (x ′) κ _L (xx ′) dx ′) obtained by the convolution integral calculation unit 10b1a2. The pattern area density-dependent pattern dimension variation amount L (x) (= γ∫ρ (x ′) κ _L (xx ′) dx ′) (γ is loading) by the pattern dimension variation total value calculation unit 10b1a3. Effect correction factor) is calculated.
Next, in the charged particle beam drawing apparatus 10 according to the first embodiment, as shown in FIG. 2, the pattern area density dependent pattern dimension variation amount L (x) and the position dependent pattern are obtained by the pattern dimension variation total value calculation unit 10 b 1 a 3. Based on the dimension variation P (x), the pattern dimension variation total value ΔCD (x) (= L (x) + P (x)) is calculated, and corresponds to the entire drawing region of the sample M (see FIG. 3), for example. A pattern dimension variation total value map (ΔCD map) to be created is created.
Specifically, in the charged particle beam drawing apparatus 10 of the first embodiment, in order to obtain the position-dependent pattern dimension variation amount P (x), for example, the first developer / manufacturer of the charged particle beam drawing apparatus 10 The drawing unit 10a (see FIG. 1), the preprocessing sample M, the SEM (scanning electron microscope), and the like of the charged particle beam drawing apparatus 10 according to the embodiment are used. For example, the preprocessing described in FIG. Are executed in advance. That is, in the charged particle beam drawing apparatus 10 of the first embodiment, for example, the position-dependent pattern dimension fluctuation amount P (x) obtained by the preprocessing described in FIG. It is incorporated in advance in the correction unit 10b1a (see FIG. 2). Furthermore, in the charged particle beam drawing apparatus 10 according to the first embodiment, the user of the charged particle beam drawing apparatus 10 has a position-dependent pattern dimension variation amount P () previously incorporated by the developer / manufacturer of the charged particle beam drawing apparatus 10. Instead of x), the position-dependent pattern dimension variation P (x) obtained by the preprocessing described in FIG. 9 of Patent Document 1, for example, executed by the user of the charged particle beam drawing apparatus 10 can be used. .

Further, in the charged particle beam drawing apparatus 10 of the first embodiment, as shown in FIG. 2, the convolution of the calculated pattern area density [rho (x) and effect distribution function kappa _G by the pattern area density calculation unit 10b1a2 integration The calculation (∫ρ (x ′) κ _G (xx ′) dx ′) is executed by the convolution integral calculation unit 10b1a4, and for example, a convolution integral map (V corresponding to the entire drawing region of the sample M (see FIG. 3)). Map) is created.
Specifically, in the charged particle beam drawing apparatus 10 of the first embodiment, the influence distribution function kappa _G and to for example a Gaussian distribution is used, the effect distribution function kappa _G is the development and manufacturer of the charged particle beam drawing apparatus 10 The charged particle beam dose correction unit 10b1a is incorporated in advance. Furthermore, in the charged particle beam drawing apparatus 10 according to the first embodiment, the user of the charged particle beam drawing apparatus 10 can use an arbitrary Gaussian distribution instead of the Gaussian distribution previously installed by the developer / manufacturer of the charged particle beam drawing apparatus 10. it can be used a function as impact distribution function kappa _G.
FIG. 10 is a diagram showing an example of a convolution integration map (V map) created by the convolution integration calculation unit 10b1a4. In the example shown in FIG. 10, the drawing area of the sample M (see FIG. 3) is virtually divided into _, for example, (m × n) meshes ME _1,1 ,..., ME _{m, n} , and each mesh ME _1,1 , ..., the size of ME _{m, n} is set to several hundred μm □, for example. Furthermore, in the example shown in FIG. 10, the calculated value vME ₁ of the convolution integral calculation (∫ρ (x ′) κ _G (xx ′) dx ′) in each mesh ME _1,1 ,..., ME _{m, n} . _{, 1} ,..., VME _{m, n} are values from 0.0 to 1.0, for example, and are set to values in increments of 0.1, for example.

Referring to FIG. 10, for example, the convolution integral calculation in the mesh _{ME 1,1 (∫ρ (x ')} κ G (x-x') dx ') Calculated _{VME 1, 1} is, for example, "0.0" For example, the calculated value vME _2,1 of the convolution integral calculation (∫ρ (x ′) κ _G (xx ′) dx ′) in the mesh ME _2,1 becomes “0.2”, for example. becomes convolution integral calculation in the _{ME 1,2 (∫ρ (x ')} κ G (x-x') dx ') is calculated values _{VME 1, 2} for example, "0.5", for example, a mesh _{ME 2, 2} The calculated value vME _2,2 of the convolution integral calculation (∫ρ (x ′) κ _G (x−x ′) dx ′) becomes “0.8”, for example, for example, the convolution integral in the mesh ME _{1, n} An example in which the calculated value vME _{1, n of the} calculation (∫ρ (x ′) κ _G (xx ′) dx ′) is, for example, “0.1” will be described.
In the charged particle beam drawing apparatus 10 according to the first embodiment, as shown in FIG. 2, the pattern area density U obtained by changing, for example, the above-described nine sets of pattern area density U values and pattern area density V values. And the pattern area density V and the dose latitude DL (U, V, DL) and the convolution integral calculation (∫ρ () in each mesh ME _1,1 ,..., ME _{m, n} (see FIG. 10). x ′) κ _G (xx ′) dx ′) calculated values vME _1,1 ,..., vME _{m, n} , based on the value corresponding to the value of the pattern area density V, the position-dependent base dose proximity The base dose (position dependent base dose) D _b ^ΔCD (x) of each position x in the drawing region of the sample M (see FIG. 3) is calculated by the effect correction coefficient calculator 10b1a5 and the sample M (see FIG. 3). ) Drawing area Proximity effect correction coefficient for each position x of the (position-dependent proximity effect correction coefficient) eta (x) is calculated.
Specifically, in the charged particle beam drawing apparatus 10 according to the first embodiment, each position in the drawing region of the sample M (see FIG. 3) is determined by the position-dependent base dose proximity effect correction coefficient calculation unit 10b1a5 (see FIG. 2). When the base dose (position-dependent base dose) D _b ^ΔCD (x) of x is calculated, the following formula (1) is used.

In Expression (1), “D _b ” indicates a base dose (constant). In the charged particle beam drawing apparatus 10 of the first embodiment, as the value of the base dose D _b in Equation (1), for example, the value of the base dose described in paragraph 0085 of Patent Document 3 (constant) is used. Further, each position x in the drawing area of the sample M (see FIG. 3) calculated by the pattern dimension variation total value calculation unit 10b1a3 as the value of the pattern dimension variation total value ΔCD (x) in Equation (1). The pattern dimension variation total value ΔCD (x) is used. Further, in Expression (1), “DL (1.0)” is a pattern area density U (see FIG. 5 (FIG. 5 (A))) in the local region LA (see FIGS. 5A, 7 A, and 9 A). B), the dose latitude DL (FIG. 5B, FIG. 7B and FIG. 9B) when the value of FIG. 7B and FIG. 9B is set to “1.0”. )) Value).

Specifically, in the charged particle beam drawing apparatus 10 of the first embodiment, the convolution integral calculation (∫ρ in the mesh ME _2,1 (see FIG. 10) of the convolution map (V map) (see FIG. 10). (X ′) κ _G (xx ′) dx ′) calculated value vME _2,1 is “0.2”, and the base dose (position dependence) of the position x in the drawing region of the sample M (see FIG. 3). When the base dose) D _b ^ΔCD (x) is calculated by the position-dependent base dose proximity effect correction coefficient calculation unit 10b1a5 (see FIG. 2), first, for example, the above-described nine sets of pattern area density U and pattern area From the relationship (U, V, DL) between the density V and the dose latitude DL, the pattern area density U (in the local region LA (see FIGS. 5A, 7A, and 9A)) ( 5B, FIG. 7B, and FIG. B) refer) relationship between the pattern area density U and the pattern area density V and dose latitude DL values are three sets which is set to "1.0" in the (U, V, DL)
= (1.0, 0.0, 1.2) (see FIG. 5B)
= (1.0, 0.2, 1.22) (see FIG. 7B)
= (1.0, 0.8, 1.3) (see FIG. 9B)
Is selected. Next, for example, from the relationship (U, V, DL) of the three sets of pattern area density U, pattern area density V, and dose latitude DL, the value “0.2” of the calculated value vME _2,1 is set. A set of pattern area density U, pattern area density V and dose having a value “0.2” of pattern area density V (see FIG. 7B) in the corresponding global region GA (see FIG. 7A). Relationship with latitude DL (U, V, DL)
= (1.0, 0.2, 1.22) (see FIG. 7B)
Is selected.

That is, in the charged particle beam drawing apparatus 10 of the first embodiment, the convolution integral calculation (∫ρ (x ′ ′) in the mesh ME _2,1 (see FIG. 10) of the convolution integral map (V map) (see FIG. 10). ) Base dose of the position x in the drawing region of the sample M (see FIG. 3) where the calculated value vME _{2,1 of} κ _G (xx ′) dx ′) becomes “0.2” (position dependent base dose) When D _b ^ΔCD (x) is calculated by the position-dependent base dose proximity effect correction coefficient calculator 10b1a5 (see FIG. 2), the pattern area density U and the value of “DL (1.0)” in Equation 1 are Relationship between pattern area density V and dose latitude DL (U, V, DL) = (1.0, 0.2, 1.22) (see FIG. 7B). 22 "is used.
As a result, in the charged particle beam drawing apparatus 10 of the first embodiment, a mesh of a convolution integral map (V map) (see FIG. 10) within the drawing region of the sample M (see FIG. 3) based on Equation 1. The base dose (position-dependent base dose) D _b ^ΔCD (x) of the position x in ME _2,1 (see FIG. 10) is calculated by the position-dependent base dose proximity effect correction coefficient calculation unit 10b1a5 (see FIG. 2). Can do.

Furthermore, in the charged particle beam drawing apparatus 10 of the first embodiment, the convolution integral calculation (∫ρ (x ′ ′) in the mesh ME _2,2 (see FIG. 10) of the convolution integral map (V map) (see FIG. 10). ) Base dose of the position x in the drawing region of the sample M (see FIG. 3) in which the calculated value vME _{2,2 of} κ _G (xx ′) dx ′) becomes “0.8” (position dependent base dose) When D _b ^ΔCD (x) is calculated by the position-dependent base dose proximity effect correction coefficient calculation unit 10b1a5 (see FIG. 2), first, for example, the above-described nine sets of pattern area density U and pattern area density V From the relationship (U, V, DL) to the dose latitude DL, the pattern area density U (see FIG. 5 (FIG. 5 (A), FIG. 7 (A)) is determined in the local region LA (see FIG. 5 (A)). B), FIG. 7 (B) and FIG. 9 (B) Relationship between three sets of pattern area density U and the pattern area density V and dose latitude DL value is set to "1.0" of irradiation) (U, V, DL)
= (1.0, 0.0, 1.2) (see FIG. 5B)
= (1.0, 0.2, 1.22) (see FIG. 7B)
= (1.0, 0.8, 1.3) (see FIG. 9B)
Is selected. Next, for example, from the relationship (U, V, DL) of these three sets of pattern area density U, pattern area density V, and dose latitude DL, the value “0.8” of the calculated value vME _2,2 is obtained. A set of pattern area density U, pattern area density V and dose having a value “0.8” of pattern area density V (see FIG. 9B) in the corresponding global region GA (see FIG. 9A). Relationship with latitude DL (U, V, DL)
= (1.0, 0.8, 1.3) (see FIG. 9B)
Is selected.

That is, in the charged particle beam drawing apparatus 10 of the first embodiment, the convolution integral calculation (∫ρ (x ′ ′) in the mesh ME _2,2 (see FIG. 10) of the convolution integral map (V map) (see FIG. 10). ) Base dose of the position x in the drawing region of the sample M (see FIG. 3) in which the calculated value vME _{2,2 of} κ _G (xx ′) dx ′) becomes “0.8” (position dependent base dose) When D _b ^ΔCD (x) is calculated by the position-dependent base dose proximity effect correction coefficient calculator 10b1a5 (see FIG. 2), the pattern area density U and the value of “DL (1.0)” in Equation 1 are Relationship between pattern area density V and dose latitude DL (U, V, DL) = (1.0, 0.8, 1.3) (see FIG. 9B) The value “1. 3 "is used.
As a result, in the charged particle beam drawing apparatus 10 of the first embodiment, a mesh of a convolution integral map (V map) (see FIG. 10) within the drawing region of the sample M (see FIG. 3) based on Equation 1. The base dose (position dependent base dose) D _b ^ΔCD (x) of the position x in ME _2,2 (see FIG. 10) is calculated by the position dependent base dose proximity effect correction coefficient calculation unit 10b1a5 (see FIG. 2). Can do.

Furthermore, in the charged particle beam drawing apparatus 10 of the first embodiment, the convolution integral calculation (∫ρ (x ′ ′) in the mesh ME _1,1 (see FIG. 10) of the convolution integral map (V map) (see FIG. 10). ) Base dose of the position x in the drawing region of the sample M (see FIG. 3) where the calculated value vME _{1,1 of} κ _G (xx ′) dx ′) becomes “0.0” (position dependent base dose) When D _b ^ΔCD (x) is calculated by the position-dependent base dose proximity effect correction coefficient calculation unit 10b1a5 (see FIG. 2), first, for example, the above-described nine sets of pattern area density U and pattern area density V From the relationship (U, V, DL) to the dose latitude DL, the pattern area density U (see FIG. 5 (FIG. 5 (A), FIG. 7 (A)) is determined in the local region LA (see FIG. 5 (A)). B), FIG. 7 (B) and FIG. 9 (B) Relationship between three sets of pattern area density U and the pattern area density V and dose latitude DL value is set to "1.0" of irradiation) (U, V, DL)
= (1.0, 0.0, 1.2) (see FIG. 5B)
= (1.0, 0.2, 1.22) (see FIG. 7B)
= (1.0, 0.8, 1.3) (see FIG. 9B)
Is selected. Next, for example, from the relationship (U, V, DL) of these three sets of pattern area density U, pattern area density V, and dose latitude DL, the value “0.0” of the calculated value vME _1,1 is set. A set of pattern area density U, pattern area density V, and dose having a value “0.0” of pattern area density V (see FIG. 5B) in the corresponding global region GA (see FIG. 9A). Relationship with latitude DL (U, V, DL)
= (1.0, 0.0, 1.2) (see FIG. 5B)
Is selected.

That is, in the charged particle beam drawing apparatus 10 of the first embodiment, the convolution integral calculation (∫ρ (x ′ ′) in the mesh ME _1,1 (see FIG. 10) of the convolution integral map (V map) (see FIG. 10). ) Base dose of the position x in the drawing region of the sample M (see FIG. 3) where the calculated value vME _{1,1 of} κ _G (xx ′) dx ′) becomes “0.0” (position dependent base dose) When D _b ^ΔCD (x) is calculated by the position-dependent base dose proximity effect correction coefficient calculator 10b1a5 (see FIG. 2), the pattern area density U and the value of “DL (1.0)” in Equation 1 are Relationship between pattern area density V and dose latitude DL (U, V, DL) = (1.0, 0.0, 1.2) (see FIG. 5B) The value of the dose latitude DL “1. 2 "is used.
As a result, in the charged particle beam drawing apparatus 10 of the first embodiment, a mesh of a convolution integral map (V map) (see FIG. 10) within the drawing region of the sample M (see FIG. 3) based on Equation 1. The base dose (position-dependent base dose) D _b ^ΔCD (x) of the position x in ME _1,1 (see FIG. 10) is calculated by the position-dependent base dose proximity effect correction coefficient calculator 10b1a5 (see FIG. 2). Can do.

Furthermore, in the charged particle beam drawing apparatus 10 of the first embodiment, the convolution integral calculation (∫ρ (x ′ ′) in the mesh ME _1,2 (see FIG. 10) of the convolution integral map (V map) (see FIG. 10). _{) κ G (x-x '} ) dx') sample M which calcd _{VME 1, 2} is "0.5" (base dose (position-dependent basis dose position x of the drawing area in FIG. 3)) When D _b ^ΔCD (x) is calculated by the position-dependent base dose proximity effect correction coefficient calculator 10b1a5 (see FIG. 2), that is, the mesh ME _1,2 (see FIG. 10) of the convolution integral map (V map) (see FIG. 10). The calculated value vME _1,2 of the convolution integral calculation (∫ρ (x ′) κ _G (xx ′) dx ′) in FIG. 10 is larger than the value “0.2” of the calculated value vME _2,1. Calculated value vME ₂ , ₂ is smaller than “0.8” The base dose (position-dependent base dose) D _b ^ΔCD (x) of the position x in the drawing region of the sample M (see FIG. 3) that becomes “0.5” is the position-dependent base dose proximity effect correction coefficient calculation unit 10b1a5 (FIG. 2). (Refer to FIG. 7A), the value “0.2” of the pattern area density U in the global area GA (see FIG. 7A) corresponding to the calculated value vME _2,1 “0.2”. B) (see FIG. 7 (B)) and global value GA corresponding to the calculated value vME _2,2 “0.8” (see FIG. 9 (A)). In the interpolation operation based on the value “1.3” (see FIG. 9B) of the dose latitude DL corresponding to the value “0.8” (see FIG. 9B) of the pattern area density U in FIG. The resulting dose latitude DL value “1.26” is It is used as the value of the "DL (1.0)" in the formula 1.
As a result, in the charged particle beam drawing apparatus 10 of the first embodiment, a mesh of a convolution integral map (V map) (see FIG. 10) within the drawing region of the sample M (see FIG. 3) based on Equation 1. The base dose (position-dependent base dose) D _b ^ΔCD (x) of the position x in ME _{1, 2} (see FIG. 10) is calculated by the position-dependent base dose proximity effect correction coefficient calculation unit 10b1a5 (see FIG. 2). Can do.

Furthermore, in the charged particle beam drawing apparatus 10 of the first embodiment, the convolution integral calculation (∫ρ (x ′ ′) in the mesh ME _{1, n} (see FIG. 10) of the convolution integral map (V map) (see FIG. 10). ) Base dose of the position x in the drawing region of the sample M (see FIG. 3) in which the calculated value vME _{1, n} of “K” _G (xx ′) dx ′) becomes “0.1” (see FIG. 3) (position-dependent base dose) When D _b ^ΔCD (x) is calculated by the position-dependent base dose proximity effect correction coefficient calculation unit 10b1a5 (see FIG. 2), that is, mesh ME _{1, n} (see FIG. 10) of the convolution integral map (V map) (see FIG. 10). The calculated value vME _{1, n} of the convolution integral calculation (∫ρ (x ′) κ _G (xx ′) dx ′) in FIG. 10) is smaller than the value “0.2” of the calculated value vME _2,1. Calculated value vME ₁ , ₁ value “0.0” greater than “ The base dose (position-dependent base dose) D _b ^ΔCD (x) of the position x in the drawing region of the sample M (see FIG. 3) that becomes “0.1” is the position-dependent base dose proximity effect correction coefficient calculation unit 10b1a5 (FIG. 2). (Refer to FIG. 7A), the value “0.2” of the pattern area density U in the global area GA (see FIG. 7A) corresponding to the calculated value vME _2,1 “0.2”. B) (see FIG. 7 (B)) and the global area GA corresponding to the calculated value vME _1,1 “0.0” (see FIG. 5 (A)). In the interpolation operation based on the value “1.2” (see FIG. 5B) of the dose latitude DL corresponding to the value “0.0” (see FIG. 5B) of the pattern area density U in FIG. The obtained dose latitude DL value “1.21” is It is used as the value of the "DL (1.0)" in the formula 1.
As a result, in the charged particle beam drawing apparatus 10 of the first embodiment, a mesh of a convolution integral map (V map) (see FIG. 10) within the drawing region of the sample M (see FIG. 3) based on Equation 1. The base dose (position dependent base dose) D _b ^ΔCD (x) of the position x in ME _{1, n} (see FIG. 10) is calculated by the position dependent base dose proximity effect correction coefficient calculation unit 10b1a5 (see FIG. 2). Can do.

Similarly, in the charged particle beam drawing apparatus 10 of the first embodiment, all of the convolution integral map (V map) (see FIG. 10) within the drawing region of the sample M (see FIG. 3) based on Equation 1. mesh _{ME 1,1, ..., ME m,} n based dose position x in (see FIG. 10) (position-dependent basis dose) _{D b} ^{[Delta] CD} to (x), the position-dependent basis dose proximity effect correction coefficient calculation unit 10b1a5 (See FIG. 2).
Next, in the charged particle beam drawing apparatus 10 according to the first embodiment, the base dose (position-dependent base dose) D _b ^ΔCD (x) obtained by the above-described calculation, the following formulas (2), and (3) And the position-dependent base dose proximity effect correction coefficient calculation unit 10b1a5 (see FIG. 2) uses the proximity effect correction coefficient (position-dependent proximity effect correction coefficient) at each position x in the drawing region of the sample M (see FIG. 3). ) Η (x) is calculated.

数式（２）および数式（３）において、「η」は近接効果補正係数（定数）を示している。第１の実施形態の荷電粒子ビーム描画装置１０では、数式（２）中の近接効果補正係数ηの値として、例えば特許文献４（特開２０１０−１６１０９９号公報）の段落００２８、段落００３２、段落００４７等に記載された近接効果補正係数（定数）の値が用いられる。

In Equations (2) and (3), “η” indicates a proximity effect correction coefficient (constant). In the charged particle beam drawing apparatus 10 according to the first embodiment, as the value of the proximity effect correction coefficient η in Equation (2), for example, paragraph 0028, paragraph 0032, paragraph of Patent Document 4 (Japanese Patent Laid-Open No. 2010-161099) The value of the proximity effect correction coefficient (constant) described in 0047 etc. is used.

Specifically, in the charged particle beam drawing apparatus 10 according to the first embodiment, for example, a convolution integral calculation (see FIG. 10) in a mesh ME _2,1 (see FIG. 10) of a convolution integral map (V map) (see FIG. 10). Proximity effect correction of the position x in the drawing region of the sample M (see FIG. 3) where the calculated value vME _{2,1 of} ∫ρ (x ′) κ _G (xx ′) dx ′) is “0.2”. When the coefficient (position-dependent proximity effect correction coefficient) η (x) is calculated by the position-dependent base dose proximity effect correction coefficient calculator 10b1a5 (see FIG. 2), first, for example, the above-described nine sets of pattern area densities A pattern in the global area GA (see FIG. 6A, FIG. 6C, and FIG. 7A) from the relationship (U, V, DL) between U, the pattern area density V, and the dose latitude DL. Area density V (FIGS. 6B and 6D) Beauty Figure 7 (B) refer) relationship value of the three sets of pattern area density U and the pattern area density V and dose latitude DL which is set to "0.2" in the (U, V, DL)
= (0.0, 0.2, 0.62) (see FIG. 6B)
= (0.5, 0.2, 0.93) (see FIG. 6D)
= (1.0, 0.2, 1.22) (see FIG. 7B)
Is selected.
Next, in the charged particle beam drawing apparatus 10 of the first embodiment, the pattern area density U of the relationship (U, V, DL) of the three sets of the pattern area density U, the pattern area density V, and the dose latitude DL described above. The position-dependent proximity effect correction coefficient η (U) at each value is calculated by the position-dependent base dose proximity effect correction coefficient calculation unit 10b1a5 (see FIG. 2).

Specifically, when the value of the pattern area density U is “0.0”, the value of “U” in Equation (2) and Equation (3) becomes “0.0”, and Equation (2) The value of “DL (U)” is “0.62”. As a result, the value of “D _p (U)” when the value of the pattern area density U is “0.0” is obtained based on Expression (2). Further, the value of “η (U)” when the value of the pattern area density U is “0.0” is obtained based on the value of “D _p (U)” and the formula (3).
When the value of the pattern area density U is “0.5”, the value of “U” in Equation (2) and Equation (3) becomes “0.5”. The value of “DL (U)” becomes “0.93”. As a result, the value of “D _p (U)” when the value of the pattern area density U is “0.5” is obtained based on Expression (2). Further, the value of “η (U)” when the value of the pattern area density U is “0.5” is obtained based on the value of “D _p (U)” and the formula (3).
Furthermore, when the value of the pattern area density U is “1.0”, the value of “U” in Equation (2) and Equation (3) becomes “1.0”, and the value in Equation (2) The value of “DL (U)” becomes “1.22”. As a result, the value of “D _p (U)” when the value of the pattern area density U is “1.0” is obtained based on Expression (2). Further, the value of “η (U)” when the value of the pattern area density U is “1.0” is obtained based on the value of “D _p (U)” and the formula (3).
Next, in the charged particle beam drawing apparatus 10 of the first embodiment, the position-dependent proximity effect correction at each value of the pattern area density U described above, for example, is performed by the position-dependent base dose proximity effect correction coefficient calculation unit 10b1a5 (see FIG. 2). The average value of the coefficient η (U) is calculated, and the convolution integral calculation (∫ρ (x ′) κ _G (in the mesh ME _2,1 (see FIG. 10)) of the convolution map (V map) (see FIG. 10) is calculated. The proximity effect correction coefficient (position dependent proximity effect correction coefficient) of the position x in the drawing region of the sample M (see FIG. 3) where the calculated value vME _{2,1 of} xx ′) dx ′) becomes “0.2” Used as η (x).

Furthermore, in the charged particle beam drawing apparatus 10 according to the first embodiment, for example, the convolution integral calculation (∫ρ () in the mesh ME _2,2 (see FIG. 10) of the convolution map (V map) (see FIG. 10). Proximity effect correction coefficient (position) of the position x in the drawing region of the sample M (see FIG. 3) where the calculated value vME _{2,2 of} x ′) κ _G (xx ′) dx ′) becomes “0.8” When the dependent proximity effect correction coefficient) η (x) is calculated by the position-dependent base dose proximity effect correction coefficient calculation unit 10b1a5 (see FIG. 2), first, for example, the above-described nine sets of pattern area density U and pattern Of the relationship (U, V, DL) between the area density V and the dose latitude DL, the pattern area density V in the global region GA (see FIGS. 8A, 8C, and 9A). (Fig. 8 (B), Fig. 8 (D) and figure (B) Relationship value of the three sets of pattern area density U and the pattern area density V and dose latitude DL which is set to "0.8" in Reference) (U, V, DL)
= (0.0, 0.8, 0.65) (see FIG. 8B)
= (0.5, 0.8, 1.0) (see FIG. 8D)
= (1.0, 0.8, 1.3) (see FIG. 9B)
Is selected.
Next, in the charged particle beam drawing apparatus 10 of the first embodiment, the pattern area density U of the relationship (U, V, DL) of the three sets of the pattern area density U, the pattern area density V, and the dose latitude DL described above. The position-dependent proximity effect correction coefficient η (U) at each value is calculated by the position-dependent base dose proximity effect correction coefficient calculation unit 10b1a5 (see FIG. 2).

Specifically, when the value of the pattern area density U is “0.0”, the value of “U” in Equation (2) and Equation (3) becomes “0.0”, and Equation (2) The value of “DL (U)” in the middle becomes “0.65”. As a result, the value of “D _p (U)” when the value of the pattern area density U is “0.0” is obtained based on Expression (2). Further, the value of “η (U)” when the value of the pattern area density U is “0.0” is obtained based on the value of “D _p (U)” and the formula (3).
When the value of the pattern area density U is “0.5”, the value of “U” in Equation (2) and Equation (3) becomes “0.5”. The value of “DL (U)” becomes “1.0”. As a result, the value of “D _p (U)” when the value of the pattern area density U is “0.5” is obtained based on Expression (2). Further, the value of “η (U)” when the value of the pattern area density U is “0.5” is obtained based on the value of “D _p (U)” and the formula (3).
Furthermore, when the value of the pattern area density U is “1.0”, the value of “U” in Equation (2) and Equation (3) becomes “1.0”, and the value in Equation (2) The value of “DL (U)” becomes “1.3”. As a result, the value of “D _p (U)” when the value of the pattern area density U is “1.0” is obtained based on Expression (2). Further, the value of “η (U)” when the value of the pattern area density U is “1.0” is obtained based on the value of “D _p (U)” and the formula (3).
Next, in the charged particle beam drawing apparatus 10 of the first embodiment, the position-dependent proximity effect correction at each value of the pattern area density U described above, for example, is performed by the position-dependent base dose proximity effect correction coefficient calculation unit 10b1a5 (see FIG. 2). The average value of the coefficient η (U) is calculated, and the convolution integral calculation (∫ρ (x ′) κ _G () in the mesh ME _2,2 (see FIG. 10) of the convolution map (V map) (see FIG. 10) is calculated. The proximity effect correction coefficient (position dependent proximity effect correction coefficient) of the position x in the drawing region of the sample M (see FIG. 3) where the calculated value vME _{2,2 of} xx ′) dx ′) is “0.8”. Used as η (x).

Furthermore, in the charged particle beam drawing apparatus 10 according to the first embodiment, for example, the convolution integral calculation (∫ρ () in the mesh ME _1,1 (see FIG. 10) of the convolution map (V map) (see FIG. 10). The proximity effect correction coefficient (position) of the position x in the drawing region of the sample M (see FIG. 3) where the calculated value vME _{1,1 of} x ′) κ _G (xx ′) dx ′) becomes “0.0”. When the dependent proximity effect correction coefficient) η (x) is calculated by the position-dependent base dose proximity effect correction coefficient calculation unit 10b1a5 (see FIG. 2), first, for example, the above-described nine sets of pattern area density U and pattern Of the relationship (U, V, DL) between the area density V and the dose latitude DL, the pattern area density V in the global region GA (see FIGS. 4A, 4C, and 5A). (FIG. 4 (B), FIG. 4 (D) and FIG. (B) Relationship value of the three sets of pattern area density U and the pattern area density V and dose latitude DL which is set to "0.0" in Reference) (U, V, DL)
= (0.0, 0.0, 0.6) (see FIG. 4B)
= (0.5, 0.0, 0.9) (see FIG. 4D)
= (1.0, 0.0, 1.2) (see FIG. 5B)
Is selected.
Next, in the charged particle beam drawing apparatus 10 of the first embodiment, the pattern area density U of the relationship (U, V, DL) of the three sets of the pattern area density U, the pattern area density V, and the dose latitude DL described above. The position-dependent proximity effect correction coefficient η (U) at each value is calculated by the position-dependent base dose proximity effect correction coefficient calculation unit 10b1a5 (see FIG. 2).

Specifically, when the value of the pattern area density U is “0.0”, the value of “U” in Equation (2) and Equation (3) becomes “0.0”, and Equation (2) The value of “DL (U)” is “0.6”. As a result, the value of “D _p (U)” when the value of the pattern area density U is “0.0” is obtained based on Expression (2). Further, the value of “η (U)” when the value of the pattern area density U is “0.0” is obtained based on the value of “D _p (U)” and the formula (3).
When the value of the pattern area density U is “0.5”, the value of “U” in Equation (2) and Equation (3) becomes “0.5”. The value of “DL (U)” becomes “0.9”. As a result, the value of “D _p (U)” when the value of the pattern area density U is “0.5” is obtained based on Expression (2). Further, the value of “η (U)” when the value of the pattern area density U is “0.5” is obtained based on the value of “D _p (U)” and the formula (3).
Furthermore, when the value of the pattern area density U is “1.0”, the value of “U” in Equation (2) and Equation (3) becomes “1.0”, and the value in Equation (2) The value of “DL (U)” becomes “1.2”. As a result, the value of “D _p (U)” when the value of the pattern area density U is “1.0” is obtained based on Expression (2). Further, the value of “η (U)” when the value of the pattern area density U is “1.0” is obtained based on the value of “D _p (U)” and the formula (3).
Next, in the charged particle beam drawing apparatus 10 of the first embodiment, the position-dependent proximity effect correction at each value of the pattern area density U described above, for example, is performed by the position-dependent base dose proximity effect correction coefficient calculation unit 10b1a5 (see FIG. 2). The average value of the coefficient η (U) is calculated, and the convolution integral calculation (∫ρ (x ′) κ _G () in the mesh ME _1,1 (see FIG. 10) of the convolution map (V map) (see FIG. 10) is calculated. The proximity effect correction coefficient (position dependent proximity effect correction coefficient) of the position x in the drawing region of the sample M (see FIG. 3) where the calculated value vME _{1,1 of} xx ′) dx ′) becomes “0.0”. Used as η (x).

Furthermore, in the charged particle beam drawing apparatus 10 of the first embodiment, the convolution integral calculation (∫ρ (x ′ ′) in the mesh ME _1,2 (see FIG. 10) of the convolution integral map (V map) (see FIG. 10). _{) κ G (x-x '} ) dx') of the proximity effect correction coefficient position x in the drawing area of the calculated value sample _{VME 1, 2} is "0.5" M (see FIG. 3) (position-dependent proximity When the effect correction coefficient) η (x) is calculated by the position-dependent base dose proximity effect correction coefficient calculation unit 10b1a5 (see FIG. 2), that is, the mesh ME _{1 of the} convolution integral map (V map) (see FIG. 10). ₂ (see FIG. 10), the calculated value vME _1,2 of the convolution integral calculation (∫ρ (x ′) κ _G (xx ′) dx ′) in the calculation value vME _2,1 is “0.2”. Larger calculated value vME ₂ , ₂ value smaller than “0.8” “0” .5 "is the proximity effect correction coefficient (position dependent proximity effect correction coefficient) η (x) at the position x in the drawing region of the sample M (see FIG. 3). 2), for example, the proximity effect correction coefficient (position-dependent proximity effect correction) of the position x in the drawing region of the sample M (see FIG. 3) where the calculated value vME _2,1 is “0.2”. Coefficient) Proximity effect correction coefficient (position-dependent proximity effect correction coefficient) at the position x in the drawing area of the sample M (see FIG. 3) where the value of η (x) and the calculated value vME _2,2 are “0.8”. An interpolation operation based on the value of η (x) is executed, and the proximity effect correction coefficient (position) of the position x in the drawing region of the sample M (see FIG. 3) where the calculated values vME _{1 and 2} are “0.5”. Dependent proximity effect correction coefficient) η (x).

Further, in the charged particle beam drawing apparatus 10 of the first embodiment, the convolution integral calculation (∫ρ (x ′ ′) in the mesh ME _{1, n} (see FIG. 10) of the convolution integral map (V map) (see FIG. 10). ) The proximity effect correction coefficient (position-dependent proximity) of the position x in the drawing region of the sample M (see FIG. 3) where the calculated value vME _{1, n of} κ _G (xx ′) dx ′) becomes “0.1”. When the effect correction coefficient) η (x) is calculated by the position-dependent base dose proximity effect correction coefficient calculation unit 10b1a5 (see FIG. 2), that is, the mesh ME _1, The calculated value vME _{1, n} of the convolution integral calculation (∫ρ (x ′) κ _G (xx ′) dx ′) in _n (see FIG. 10) is the value “0.2” of the calculated value vME _2,1. A smaller value “0” than the calculated value vME _1,1 “0.0” “0” .1 ”in the drawing region of the sample M (see FIG. 3), the proximity effect correction coefficient (position dependent proximity effect correction coefficient) η (x) at the position x is the position dependent base dose proximity effect correction coefficient calculator 10b1a5 (FIG. 2), for example, the proximity effect correction coefficient (position-dependent proximity effect correction) of the position x in the drawing region of the sample M (see FIG. 3) where the calculated value vME _2,1 is “0.2”. Coefficient) η (x) value and the calculated value vME _1,1 are “0.0”. The proximity effect correction coefficient (position dependent proximity effect correction coefficient) of the position x in the drawing region of the sample M (see FIG. 3). An interpolation operation based on the value of η (x) is executed, and the proximity effect correction coefficient (position) of the position x in the drawing region of the sample M (see FIG. 3) where the calculated value vME _{1, n} becomes “0.1” Dependent proximity effect correction coefficient) η (x).

In the charged particle beam drawing apparatus 10 of the first embodiment, all of the convolution integral map (V map) (see FIG. 10) in the drawing region of the sample M (see FIG. 3) based on the same interpolation operation. A proximity effect correction coefficient (position dependent proximity effect correction coefficient) η (x) of a position x in the mesh ME _1,1 ,..., ME _{m, n} (see FIG. 10) is converted into a position dependent base dose proximity effect correction coefficient calculation unit. 10b1a5 (see FIG. 2).
Next, in the charged particle beam drawing apparatus 10 of the first embodiment, as shown in FIG. 2, the position-dependent base dose D _b ^ΔCD (x) obtained by the position-dependent base dose proximity effect correction coefficient calculation unit 10b1a5 and the position-dependent Based on the proximity effect correction coefficient η (x) and the mathematical expressions described in FIGS. 12 and 13 of Patent Document 1, for example, the proximity effect correction dose calculation unit 10b1a6 within the drawing region of the sample M (see FIG. 3). The proximity effect correction dose D _p (x) at each position x is calculated, and for example, a proximity effect correction dose map corresponding to the entire drawing region of the sample M (see FIG. 3) is created.

In other words, in the charged particle beam drawing apparatus 10 of the first embodiment, for example, the pattern area density U and the pattern area density V in which the values of the nine patterns of pattern area density U and the pattern area density V are changed as described above. And the dose latitude DL (U, V, DL) and the convolution integral calculation in each mesh ME _1,1 ,..., ME _{m, n} of the convolution map (V map) (see FIG. 10) ( ∫ρ (x ′) κ _G (x−x ′) dx ′) calculated values vME _1,1 ,..., VME _{m, n} based on the value corresponding to the value of the pattern area density V A dependent base dose D _b ^ΔCD (x) and a position dependent proximity effect correction factor η (x) are calculated. That is, in the charged particle beam drawing apparatus 10 of the first embodiment, the local region LA (FIG. 4A) is calculated when calculating the position-dependent base dose D _b ^ΔCD (x) and the position-dependent proximity effect correction coefficient η (x). In addition, the pattern area density U in the global region GA (see FIG. 4A, etc.) is also considered, and further, a convolution integral map (V map) (see FIG. 4). each mesh _ME 1, 1 of the 10 _reference), ..., _{ME m,} the calculated value of the convolution integral calculated in _{n (∫ρ (x ') κ} G (x-x') dx ') vME 1,1, ..., A value of vME _{m, n} corresponding to the value of the pattern area density V is considered.
Therefore, according to the charged particle beam drawing apparatus 10 of the first embodiment, the pattern area density V in the global region GA is not taken into account when calculating the base dose (reference dose) and the proximity effect correction coefficient, and The calculated values vME _1,1 ,..., VME _{m, n} in each mesh ME _1,1 ,..., ME _{m, n} of the convolution integral map (V map) (see FIG. 10) are not taken into account. Compared to a general charged particle beam writing apparatus such as the charged particle beam writing apparatus described in FIG. 3, FIG. 4, FIG. 4 and FIG. 5, the position-dependent base dose D _b ^ΔCD (x) and An appropriate value of the position-dependent proximity effect correction coefficient η (x) can be calculated, and as a result, the variation amount of the pattern dimension CD can be reduced.

FIG. 11 is a diagram for explaining processing in the position-dependent base dose proximity effect correction coefficient calculation unit 10b1a5 of the charged particle beam drawing apparatus 10 of the third embodiment. In the charged particle beam drawing apparatus 10 according to the first embodiment, as described above, the position-dependent base dose D _b ^ΔCD (x) and the position-dependent proximity are obtained by using the expressions (1), (2), and (3). Although the effect correction coefficient η (x) is calculated, the charged particle beam drawing apparatus 10 according to the third embodiment uses a position-dependent base by using the equations (4) and (5) in FIG. 11 instead. A dose Db (see FIG. 11) and a position-dependent proximity effect correction coefficient η (see FIG. 11) are calculated.
Specifically, in the charged particle beam drawing apparatus 10 according to the third embodiment, for example, a convolution integral calculation (see FIG. 10) in a mesh ME _1,1 (see FIG. 10) of a convolution integral map (V map) (see FIG. 10). The base dose of the position x in the drawing region of the sample M (see FIG. 3) in which the calculated value vME _{1,1 of} ∫ρ (x ′) κ _G (xx ′) dx ′) becomes “0.0” (see FIG. 3). The position-dependent base dose) Db (see FIG. 11) and the proximity effect correction coefficient (position-dependent proximity effect correction coefficient) η (see FIG. 11) are calculated by the position-dependent base dose proximity effect correction coefficient calculation unit 10b1a5 (see FIG. 2). First, for example, the global area GA (FIG. 4 (A)) is selected from the above-described nine sets of pattern area density U, pattern area density V, and dose latitude DL (U, V, DL). Fig. 4 (C) And the pattern area density V (see FIGS. 4B, 4D, and 5B) in FIG. 5A is a convolution integral map (V map) (see FIG. 10). Of three sets of pattern area density U, pattern area density V set to “0.0” corresponding to calculated value vME _1,1 in mesh ME _1,1 (see FIG. 10), and dose latitude DL (U, V, DL)
= (0.0, 0.0, 0.6) (see FIG. 4B)
= (0.5, 0.0, 0.9) (see FIG. 4D)
= (1.0, 0.0, 1.2) (see FIG. 5B)
Is selected.

Next, in the charged particle beam drawing apparatus 10 of the third embodiment, the pattern area density U of the relationship (U, V, DL) of the above-described three sets of pattern area density U, pattern area density V, and dose latitude DL. Dose D after correction of proximity effect / loading effect at each value (U = 0.0, U = 0.5, U = 1.0) (vertical axis of the graph in FIG. 11, mathematical formula (4) in FIG. 11 11) is calculated by the position-dependent base dose proximity effect correction coefficient calculation unit 10b1a5 (see FIG. 2) using Equation (4) in FIG.
In Expression (4), “Db” represents a base dose (constant). In the charged particle beam drawing apparatus 10 according to the third embodiment, the value of the base dose (constant) described in paragraph 0085 of Patent Document 3, for example, is used as the value of the base dose Db in Equation (4). Each position x in the drawing area of the sample M (see FIG. 3) calculated by the pattern dimension variation total value calculation unit 10b1a3 as the value of the pattern dimension variation total value ΔCD (x) in Equation (4). The pattern dimension variation total value ΔCD (x) is used. Furthermore, as the value of the dose latitude DL (U) in the equation (4), “0.6” (see FIG. 4B), “0.9” (see FIG. 4D), and “1.2 (See FIG. 5B). In addition, the function “Dp (η, U)” in Expression (4) is set to “((1/2) + η) / ((1/2) + η × U)”, for example, As the value of the proximity effect correction coefficient η (constant), for example, the value of the proximity effect correction coefficient (constant) described in paragraph 0028, paragraph 0032, paragraph 0047, etc. of Patent Document 4 (Japanese Patent Laid-Open No. 2010-161099) is used. It is done.

Specifically, in the charged particle beam drawing apparatus 10 of the third embodiment, the pattern area density of the relationship (U, V, DL) between the three sets of pattern area density U, pattern area density V, and dose latitude DL described above. By using three values of U (U = 0.0, U = 0.5, U = 1.0), three points in the graph shown in FIG. 11 are obtained.
Next, in the charged particle beam drawing apparatus 10 according to the third embodiment, processing related to a function (the right side of Expression (5)) corresponding to the curve in the graph shown in FIG. 11 is executed. Specifically, the base dose Db (ΔCD) and the proximity effect correction coefficient η (ΔCD) in Equation (5) are set as parameters (variables), and the fitting process is executed using the least square method or the like. In the charged particle beam drawing apparatus 10 of the third embodiment, the optimum value obtained by this fitting process is within the mesh ME _1,1 (see FIG. 10) of the convolution integral map (V map) (see FIG. 10). A position x in the drawing area of the sample M (see FIG. 3) where the calculated value vME _{1,1 of the} convolution integral calculation (∫ρ (x ′) κ _G (xx ′) dx ′) becomes “0.0”. Base dose (position-dependent base dose) Db (see FIG. 11) and proximity effect correction coefficient (position-dependent proximity effect correction coefficient) η (see FIG. 11).

  In 4th Embodiment, it is also possible to combine suitably the 1st-3rd embodiment mentioned above, its modification, and each example.

DESCRIPTION OF SYMBOLS 10 Charged particle beam drawing apparatus 10a Drawing part 10a1b Charged particle beam 10b1a Charged particle beam irradiation amount correction | amendment part 10b1a1 Pattern area density calculation part 10b1a2 Convolution integral calculation part 10b1a3 Pattern dimension fluctuation amount total value calculation part 10b1a4 Convolution integral calculation part 10b1a5 Position dependence base Dose proximity effect correction coefficient calculation unit 10b1a6 Proximity effect correction dose calculation unit M Sample

Claims (5)

A drawing unit that draws a pattern corresponding to a figure included in the drawing data on the resist in the drawing region of the sample by irradiating the drawing region of the sample with the resist applied on the upper surface by a charged particle beam;
A pattern area density calculation unit for calculating an area density of a pattern drawn by a charged particle beam based on drawing data;
A first convolution integral calculator that performs a convolution integral calculation of the pattern area density calculated by the pattern area density calculator and the first influence distribution function;
A pattern dimension variation total value calculation unit for calculating a total value of the pattern dimension variation from the pattern area density dependent pattern dimension variation based on the value obtained by the first convolution integral calculation unit and the position dependent pattern dimension variation;
A second convolution integral calculation unit that performs a convolution integral calculation of the pattern area density calculated by the pattern area density calculation unit and the second influence distribution function;
The relationship between the pattern area density in the local area, the pattern area density in the global area around the local area, and the dose latitude of the pattern drawn in the local area, and the value of the pattern area density in the local area And the value obtained by the second convolution integral calculation unit based on the relationship in which the value of the pattern area density in the global region is changed, and based on the value corresponding to the value of the pattern area density in the global region, A position-dependent base dose proximity effect correction coefficient calculation unit for calculating a position-dependent base dose and a position-dependent proximity effect correction coefficient;
A proximity effect correction dose calculation unit for calculating a proximity effect correction dose based on the position dependent base dose obtained by the position dependent base dose proximity effect correction coefficient calculation unit and the position dependent proximity effect correction coefficient ;
The charged particle beam drawing apparatus , wherein the dose latitude is a ratio of a variation amount of the pattern dimension to a change amount of the irradiation amount of the charged particle beam. Position-dependent base dose proximity effect correction coefficient calculator
Corresponds to the first value when calculating the position-dependent base dose and the position-dependent proximity effect correction coefficient of the first position in the drawing region of the sample where the value obtained by the second convolution integral calculation unit becomes the first value Use the dose latitude value corresponding to the pattern area density value in the global area
When calculating the position-dependent base dose and the position-dependent proximity effect correction coefficient of the second position in the drawing region of the sample in which the value obtained by the second convolution integral calculation unit becomes a second value larger than the first value, Using the dose latitude value corresponding to the pattern area density value in the global region corresponding to the second value,
When calculating the position-dependent base dose and the position-dependent proximity effect correction coefficient of the third position in the drawing region of the sample in which the value obtained by the second convolution integral calculation unit becomes a third value smaller than the first value, The charged particle beam drawing apparatus according to claim 1, wherein a dose latitude value corresponding to a pattern area density value in a global region corresponding to the third value is used. Position-dependent base dose proximity effect correction coefficient calculator
When calculating the position-dependent base dose of the fourth position in the drawing region of the sample in which the value obtained by the second convolution integral calculation unit becomes the fourth value that is larger than the first value and smaller than the second value, Based on the value of the dose latitude corresponding to the value of the pattern area density in the global region corresponding to the value of 1, and the value of the dose latitude corresponding to the value of the pattern area density in the global region corresponding to the second value Using the value of the dose latitude obtained by the interpolation operation,
When calculating the position-dependent base dose of the fifth position in the drawing region of the sample in which the value obtained by the second convolution integral calculation unit is the fifth value smaller than the first value and larger than the third value, Based on the value of the dose latitude corresponding to the value of the pattern area density in the global region corresponding to the value of 1, and the value of the dose latitude corresponding to the value of the pattern area density in the global region corresponding to the third value The charged particle beam drawing apparatus according to claim 2, wherein a dose latitude value obtained by an interpolation operation is used. Irradiation of a charged particle beam drawing apparatus that draws a pattern corresponding to a figure included in drawing data on a resist in the drawing region of the sample by irradiating the drawing region of the sample coated with a resist on the upper surface of the sample. In the amount correction method,
The area density of the pattern drawn by the charged particle beam is calculated by the pattern area density calculation unit based on the drawing data,
A convolution integral calculation of the pattern area density calculated by the pattern area density calculation unit and the first influence distribution function is executed by the first convolution integral calculation unit;
The pattern dimension variation total value calculation unit calculates the total value of the pattern dimension variation from the pattern area density dependent pattern dimension variation based on the value obtained by the first convolution integral calculation unit and the position dependent pattern dimension variation,
The convolution integral calculation of the pattern area density calculated by the pattern area density calculation unit and the second influence distribution function is executed by the second convolution integral calculation unit,
The relationship between the pattern area density in the local area, the pattern area density in the global area around the local area, and the dose latitude of the pattern drawn in the local area, and the value of the pattern area density in the local area And the value obtained by the second convolution integral calculation unit based on the relationship in which the value of the pattern area density in the global region is changed, and based on the value corresponding to the value of the pattern area density in the global region, The position dependent base dose and the position dependent proximity effect correction coefficient are calculated by the position dependent base dose proximity effect correction coefficient calculation unit,
Based on the position dependent base dose and the position dependent proximity effect correction coefficient obtained by the position dependent base dose proximity effect correction coefficient calculator, the proximity effect correction dose is calculated by the proximity effect correction dose calculator .
The dose latitude is a ratio of a variation amount of the pattern dimension to a change amount of the irradiation amount of the charged particle beam. When the value obtained by the second convolution integral calculation unit at the first position in the drawing region of the sample becomes the first value, it corresponds to the value of the pattern area density in the global region corresponding to the first value. Based on the dose latitude value, the position-dependent base dose and the position-dependent proximity effect correction coefficient are calculated by the position-dependent base dose proximity effect correction coefficient calculation unit,
The pattern area in the global region corresponding to the second value when the value obtained by the second convolution integral calculation unit at the second position in the drawing region of the sample is a second value larger than the first value. Based on the dose latitude value corresponding to the density value, the position dependent base dose and the position dependent proximity effect correction coefficient are calculated by the position dependent base dose proximity effect correction coefficient calculation unit,
The pattern area in the global region corresponding to the third value when the value obtained by the second convolution integral calculation unit at the third position in the drawing region of the sample becomes the third value smaller than the first value. The position-dependent base dose and the position-dependent proximity effect correction coefficient are calculated by a position-dependent base dose proximity effect correction coefficient calculation unit based on a dose latitude value corresponding to the density value. Irradiation amount correction method for charged particle beam drawing apparatus.

Images