KR101001870B1 - Apparatus for fabricating semiconductor device and method for dry etching of silicon oxide using the same - Google Patents

Abstract

Provided are a semiconductor manufacturing apparatus and a silicon oxide dry etching method using the same. The semiconductor manufacturing apparatus according to the present invention is configured such that a circulation passage through which fluid circulates in a susceptor supporting a substrate cools or heats the susceptor, and includes a fluid inflow passage, a fluid outlet passage, and a fluid bypass passage connected to the circulation passage. It is configured to include at least three channels. According to the semiconductor manufacturing equipment of the present invention, since there are several channels, it is possible to flexibly cope with the selective use of the channel when the substrate temperature change is required during the process. In particular, when the susceptor and the substrate are cooled after the process is carried out at a high temperature, the substrate can be quickly cooled and taken out, thereby increasing throughput.

Description

Apparatus for fabricating semiconductor device and method for dry etching of silicon oxide using the same}

The present invention relates to a semiconductor manufacturing apparatus using a gas manufacturing process in a chamber and a semiconductor manufacturing process using the same. And a silicon oxide dry etching method using the same.

In general, the manufacturing process of a semiconductor device is a process of realizing an electronic circuit that performs a certain function by combining thin films, such as conductive films, semiconductor films, and insulating films, having different properties on a substrate, by combining the order of stacking and the shape of a pattern. I can speak. Accordingly, in the semiconductor device manufacturing process, various thin film deposition and etching unit processes are repeatedly performed. In order to perform the unit process, the substrate is loaded and processed into a chamber providing optimal conditions for the process.

On the other hand, since semiconductor manufacturing processes, such as a deposition process and an etching process, are mostly performed in a high temperature environment, a means for heating the substrate is provided in the chamber, and the substrate is cooled before being removed from the chamber. Is frequent.

As shown in FIG. 1, a semiconductor for heating a substrate 1 by embedding a heater 20 in a substrate support block 10 and circulating cooling water in the substrate support block 10 when the substrate 1 is cooled. Manufacturing equipment A is widely used. As shown in FIG. 1, the semiconductor manufacturing equipment 100 includes a chamber 30 and one substrate support block 10 installed inside the chamber 30 and in which the substrate 1 is in contact with and supported. . The chamber 30 is made of a metal material, and a substrate entrance 40 through which the substrate 1 enters and exits is formed on a side surface of the chamber 30 by a blade (not shown) of the substrate transfer robot. In addition, a rod-shaped supporter 50 is coupled to the substrate support block 10. In addition, the support 50 is formed with an inflow passage 51 and an outflow passage 52 through which cooling water flows in and out, respectively, and the substrate support block 10 is connected to the inflow passage 51 and the outlet passage 52. A circulating flow path 53 is formed.

In the semiconductor manufacturing equipment A configured as described above, the substrate transfer robot is operated to seat the substrate 1 on the substrate support block 10, and then the process is performed while heating to a high temperature using the heater 20. After the progress of the process, the coolant is supplied to the circulation flow path 53 through the inflow flow path 51 and the outflow flow path 52 to circulate to cool the high-temperature substrate 1.

By the way, since the above-described semiconductor manufacturing equipment A has a form in which the inflow passage 51 and the outflow passage 52 use one channel, the cooling of the substrate 1 is not performed unless the temperature of the cooling water circulating through the channel is controlled. There is a difficulty in controlling the degree, and even when the temperature of the substrate 1 is changed during the process, it depends on only the heater 20, and thus there is a limitation in that it cannot be handled more flexibly.

The present invention is to solve the above problems, an object of the present invention is to facilitate the cooling and heating of the substrate during the process to effectively control the substrate temperature change and to maximize the throughput (throughput) and It is to provide a silicon oxide dry etching method using this semiconductor manufacturing equipment.

One configuration of the semiconductor manufacturing equipment according to the present invention for achieving the above object is a chamber in which a semiconductor manufacturing process is performed, a susceptor for supporting a substrate, a susceptor for supporting a substrate, is disposed above the susceptor, and the semiconductor Shower head for injecting the process gas for the manufacturing process, the inlet flow passage for supplying the fluid into the susceptor from the outside of the chamber so that the fluid for heating or cooling the susceptor circulates inside the susceptor A circulating flow passage connected to the fluid to circulate in the susceptor and an outlet passage connected to the circulation passage to discharge the fluid out of the chamber, and a fluid inflow passage connected to the inflow passage and a fluid outlet passage connected to the outlet passage And a fluid bypass flow path connecting the fluid inflow flow path and the fluid outflow flow path. At least three channels are included.

That is, a first fluid inflow passage connected to the inflow passage and a first fluid outlet passage connected to the outlet passage and a first fluid bypass passage connecting the first fluid inflow passage and the first fluid outlet passage, the inflow passage A second fluid inflow passage connected to the second fluid inflow passage connected to the outflow passage, a second fluid bypass passage connecting the second fluid inflow passage and the second fluid outlet passage, and a third connected to the inflow passage And a third fluid outlet channel connected to the fluid inflow channel and the outlet channel, and a third fluid bypass channel connecting the third fluid inflow channel and the third fluid outlet channel.

The present invention also provides a silicon oxide dry etching method using the semiconductor manufacturing equipment.

The first fluid for heating is circulated in the circulation passage through the first fluid inflow passage and the first fluid outlet passage to maintain the susceptor at a first set temperature, and then the substrate on which the silicon oxide film is formed is brought into the chamber. To be seated on an upper surface of the susceptor. An etching gas is injected through the shower head to etch the silicon oxide layer and to produce an etch byproduct on the substrate. Then, the second fluid for heating is circulated through the second fluid inflow passage and the second fluid outlet passage to maintain the susceptor at a second set temperature higher than the first set temperature. Then, the etch byproduct on the substrate is removed. After removing the etch by-products on the substrate, the third fluid for cooling is circulated through the third fluid inflow passage and the third fluid outlet passage to cool the susceptor, and then the substrate is taken out of the chamber. can do.

The etching gas may be a mixture of HF gas, NH ₃ gas, and isopropyl alcohol (IPA), the first set temperature may be 10 ° C. to 70 ° C., and the second set temperature may be 110 ° C. to 200 ° C. The temperature of the third fluid is lower than the first set temperature, for example 0 ° C.

According to the semiconductor manufacturing equipment of the present invention having the above-described configuration, since there are three or more channels as the circulating flow path, when the fluid temperature of each channel is selectively circulated by varying the fluid temperature, it is possible to deal more flexibly when the substrate temperature change is required during the process. have. In particular, when the susceptor and the substrate are cooled at a high temperature, the coolant can be cooled very quickly by circulating the lowest temperature fluid, so it is easy to control the degree of cooling of the substrate, and the substrate can be quickly removed for further processing. do.

This can significantly shorten the process run time and increase throughput. In addition, since both heating and cooling can be performed in one chamber, the equipment layout is smaller than that of a type of equipment in which a heating chamber and a cooling chamber are separately provided, thereby effectively using a clean room space.

In particular, when the semiconductor manufacturing equipment according to the present invention is used for dry etching of the silicon oxide film, the silicon oxide film is etched at a low temperature to produce an etch byproduct, and the substrate is taken out after the etching byproduct is removed by heating to a high temperature. The post heat treatment can be carried out in one chamber, which is convenient.

Hereinafter, the present invention will be described in more detail with reference to the accompanying drawings. Like reference numerals in the drawings indicate like elements. The embodiments described below may be modified in many different forms, and the scope of the present invention is not limited to the embodiments described below. Embodiments of the present invention are provided to more fully describe the present invention to those skilled in the art.

2 is a schematic diagram illustrating a semiconductor manufacturing equipment according to a first embodiment of the present invention.

Referring to FIG. 2, the semiconductor manufacturing equipment 100 includes a chamber 130 in which a semiconductor manufacturing process is performed. The chamber 130 is made of a metal material, and a substrate entrance 140 through which the substrate W enters and exits is formed on a side surface of the chamber 130 by a blade (not shown) of the substrate transfer robot.

The susceptor S for supporting the substrate is disposed in the chamber 130. As shown in FIG. 3, the susceptor S may have a structure in which a substrate support block 110 on which the substrate W is contacted and supported and a rod-shaped support 150 supporting the substrate support block 110 are combined. .

Above the susceptor S, a shower head 105 for injecting a process gas for a semiconductor manufacturing process is provided. Depending on the type of process, the gas for the thin film deposition or gas for etching may be injected from the shower head 105. Heating means (not shown) may be provided in the chamber 130 and the showerhead 105 to prevent the process gas from condensing in the chamber 130 and the showerhead 105.

An inflow passage 151, a circulation passage 153, and an outlet passage 152 are provided to circulate the fluid for heating or cooling the susceptor S. The inflow passage 151 supplies fluid into the susceptor S from the outside of the chamber 130. The circulation passage 153 is connected to the inflow passage 151 to circulate the fluid in the susceptor S. The circulated fluid is discharged to the outside of the chamber 130 through the outlet passage 152 connected to the circulation passage 153.

One end of the first fluid inflow passage 201 is connected to the inflow passage 151, and the first fluid circulated along the circulation passage 153 in the susceptor S through the inflow passage 151 is an outflow passage ( 152 is discharged to the outside of the chamber 130 through the first fluid outlet passage 202 connected to one end. Each other end of the first fluid inlet passage 201 and the first fluid outlet passage 202 is in communication with the first fluid reservoir so that the first fluid is continuously circulated. In addition, the first fluid inflow passage 201 and the first fluid outlet passage 202 are connected to the first fluid bypass passage 203.

In the process of supplying, circulating, and discharging the first fluid, the first fluid inflow passage 201 and the first fluid outlet passage 202 are used, and the first fluid bypass passage 203 is not used. On the contrary, when other channels are used, the first fluid inflow from the first fluid inflow passage 201 to the inflow passage 152 is blocked and the first fluid inflow from the outlet passage 152 to the first fluid outlet passage 202 is prevented. It also blocks and communicates with the first fluid reservoir using only the first fluid bypass flow path 203.

Accordingly, valves V1, V2, and V3 are provided in the first fluid inflow passage 201, the first fluid outlet passage 202, and the first fluid bypass passage 203, respectively, so that the first fluid inflow passage 201 is provided. ) And the first fluid outflow channel 202 and the first fluid bypass channel 203 are not used, so that the valves V1 and V2 are open and the valve V3 is closed. When the first fluid inflow passage 201 and the first fluid outlet passage 202 are not used and the first fluid bypass passage 203 is used, the valves V1 and V2 are closed and the valve V3 is closed. To operate the valve to open.

One end of the second fluid inflow passage 301 is connected to the inflow passage 151, and the second fluid circulated along the circulation passage 153 in the susceptor S through the inflow passage 151 is an outflow passage. The first fluid is discharged to the outside of the chamber 130 through the second fluid outlet flow passage 302 connected to the 152. Each other end of the second fluid inlet 301 and the second fluid outlet 302 is in communication with the second fluid reservoir so that the second fluid is continuously circulated. The second fluid inflow passage 301 and the second fluid outlet passage 302 are connected to the second fluid bypass passage 303. In the process of supplying, circulating, and discharging the second fluid without using the channel for circulating the first fluid, the second fluid inflow passage 301 and the second fluid outlet passage 302 are used, and the second fluid bypass passage ( 303) is not used. On the contrary, in the case of using a channel for circulating the first fluid, the second fluid inflow passage 301 and the second fluid outlet passage 302 are not used, and only the second fluid reservoir 303 is used. Communicate with.

Accordingly, valves V4, V5, and V6 are also provided in the second fluid inflow passage 301, the second fluid outflow passage 302, and the second fluid bypass passage 303, respectively, so that the second fluid inflow passage 301 is provided. ) And the second fluid outflow channel 302 and the second fluid bypass channel 303 are not used, the valves V4 and V5 are opened, the valve V6 is closed, and the second fluid inflow is When the second fluid bypass passage 303 is not used without the flow passage 301 and the second fluid outflow passage 302, the valves V4 and V5 are closed and the valve V6 is opened. Do it.

A third fluid inflow passage 401 is also connected to the inflow passage 151, and the third fluid circulated along the circulation passage 153 in the susceptor S through the inflow passage 151 is the outflow passage 152. Is discharged to the outside of the chamber 130 through the third fluid outlet passage 402 connected to the third fluid inlet passage 401 and the third fluid outlet passage 402 are connected to the third fluid bypass passage 403. It is. In the process of supplying, circulating, and discharging the third fluid without using a channel for circulating the first and second fluids, a third fluid inflow passage 401 and a third fluid outlet passage 402 are used. The bypass passage 403 is not used. On the contrary, when using the channel for circulating the first fluid or the second fluid, the third fluid inflow channel 401 and the third fluid outlet channel 402 are not used, and only the third fluid bypass channel 403 is used. Communicate with a third fluid reservoir.

Therefore, the valves V7, V8, and V9 are also provided in the third fluid inflow passage 401, the third fluid outlet passage 402, and the third fluid bypass passage 403, respectively, and the third fluid inflow passage 401 is provided. ) And the third fluid outflow channel 402 and the third fluid bypass channel 403 are not used, the valves V7 and V8 are open, the valve V9 is closed, and the third fluid inflow is If the flow path 401 and the third fluid outflow path 402 are not used and the third fluid bypass flow path 403 is used, the valves V7 and V8 are closed and the valve V9 is opened. Do it.

The temperatures of the first fluid, the second fluid and the third fluid are different from each other. When the temperature of the first fluid and the second fluid is higher than room temperature, the susceptor S may be heated by circulating the first fluid or the second fluid. Therefore, it is not necessary to provide a separate heating means such as a heater for heating the susceptor (S). In addition, when the temperature of the second fluid is higher than the first fluid, the susceptor S may be heated by circulating the second fluid and the susceptor S may be cooled by circulating the first fluid. In particular, with the third fluid at the lowest temperature, the first fluid and the second fluid are for heating, and the third fluid is for cooling.

As described above, the semiconductor manufacturing apparatus 100 according to the present invention may freely perform the susceptor S temperature change by configuring three channels, thereby adjusting the temperature of the substrate W seated on the susceptor S. It works smoothly.

The semiconductor manufacturing equipment 100 may be operated as a thin film deposition equipment or an etching equipment according to the selection of the process gas supplied to the shower head 105, hereinafter, the case of operating as a device for dry etching the silicon oxide film. Will be explained.

First the valves V1, V2, V6, V9 are opened and the remaining valves V3, V4, V5, V7, V8 are closed. As the valves V1 and V2 are opened, a first fluid for heating is circulated through the first fluid inflow passage 201 and the first fluid outlet passage 202 in the circulation passage 153. Due to the closing of the valves V4 and V5 and opening of the valve V6, the second fluid does not flow into the susceptor S and is circulated in its own channel. According to the closing of the valves V7 and V8 and opening of the valve V9, the third fluid does not flow into the susceptor S and the circulation occurs in its own channel.

The susceptor S is maintained at a first set temperature between 10 ° C. and 70 ° C. through the circulation of the first fluid. Assuming that the heat transfer is 100%, the first fluid may supply water having a first set temperature between 10 ° C and 70 ° C.

Then, the substrate W on which the silicon oxide film is formed is loaded into the chamber 130 and seated on the upper surface of the susceptor S. Heat is transferred from the susceptor S to the substrate W, so that the substrate W is also maintained at the first set temperature.

An etching gas including a mixed gas of HF gas, NH ₃ gas, and isopropyl alcohol (IPA) is injected through the shower head 105 to etch the silicon oxide film on the substrate W and generate an etch byproduct thereon. When the etching gas and the silicon oxide film react, an etching by-product of the form (NH ₄ ) ₂ SiF ₆ is formed, and the etching by-product is attached to the substrate W while being maintained at the first set temperature.

Next, the valves V3, V4, V5 are opened and the remaining valves V1, V2, V6 are closed. The opening of the valve V9 and the closed state of the remaining valves V7 and V8 are maintained. As the valves V4 and V5 are opened, a second fluid for heating is circulated through the second fluid inflow passage 301 and the second fluid outlet passage 302 in the circulation passage 153. According to the closing of the valves V1 and V2 and opening of the valve V3, the first fluid does not flow into the susceptor S and is circulated in its own channel. As the valves V7 and V8 are closed and the valve V9 remains open, the third fluid does not flow into the susceptor S, and circulation in its own channel continues.

The susceptor S may be maintained at a second set temperature higher than the first set temperature through the second fluid circulation. The second set temperature is 110 ° C to 200 ° C. Assuming that the heat transfer of the fluid is 100%, the second fluid may select and supply a fluid having a second set temperature between 1100 ° C and 200 ° C.

In response to heat transfer from the second fluid, the susceptor S and the substrate W are heated to a second set temperature. In this temperature range, by-products of the form (NH ₄ ) ₂ SiF ₆ are volatilized and removed from the substrate (W). In addition, since the susceptor S is maintained at a high temperature and does not act as a condensation place of any particles, powder generation in the susceptor S can be suppressed.

Then, in order to cool the susceptor S, the valves V3, V6, V7, V8 are opened and the remaining valves V1, V2, V4, V5, V9 are closed. As the valves V7 and V8 are opened, a third fluid for cooling is circulated in the circulation passage 153 through the third fluid inflow passage 401 and the third fluid outlet passage 402. With the closing of the valves V1 and V2 and opening of the valve V3, the first fluid does not flow into the susceptor S and continues to circulate in its own channel, closing the valves V4 and V5 and the valve V6. Upon opening, the second fluid does not flow into the susceptor S and is circulated in its own channel.

The third fluid is preferably used having a temperature lower than the first set temperature, for example 0 ° C. As the third fluid circulates at a lower temperature than the first fluid, the susceptor S and the substrate W thereon cool very rapidly. When the substrate W is cooled to almost room temperature, the substrate W is taken out of the chamber.

Then, the susceptor (S) heating using the first fluid is performed again for dry etching of the next substrate, and the silicon oxide dry etching process as described above is performed again, and the series of process loops is the desired number of sheets. The process is performed repeatedly until all of the substrates are processed.

In this case, since the etching process and the necessary post-heating process are performed in one chamber, the throughput is improved and the chamber is removed from the state in which the by-products are removed. Therefore, in the process of moving to another post-treatment chamber without removing the by-products, there is an effect of preventing contamination that may occur in other parts such as a transfer module.

(2nd Example)

3 is a schematic diagram illustrating a semiconductor manufacturing apparatus according to a second embodiment of the present invention.

The semiconductor manufacturing equipment 100 ′ of FIG. 3 further includes a thermocouple 500 and a control device 510 in the semiconductor manufacturing equipment 100 of FIG. 2.

Thermocouple 500 is provided below the upper surface of the susceptor (S). If possible, close to the upper surface of the substrate support block 110 to ensure accurate temperature measurement. The thermocouple 500 measures the susceptor S temperature and sends the electrical signal to the control device 510. The controller 510 controls the opening and closing of the respective valves V1 to V9 in accordance with this signal, so that only fluid of a specific channel can circulate in the circulation passage 153.

That is, the valve opening and closing operations in the silicon oxide film etching method described with reference to FIG. 1 are both performed by the controller 510, and in particular, after the heat treatment at the second set temperature, the susceptor (eg, When cooling the S), when the susceptor S reaches the first set temperature, the third fluid circulated in the circulation passage 153 through the closing of the valves V7 and V8 is blocked, and the valves V1 and V2 are closed. An operation to circulate the first fluid through the opening can be made by this control device 510.

Although the present invention has been described with reference to the embodiments illustrated in the accompanying drawings, this is merely exemplary, and it will be understood by those skilled in the art that various modifications and equivalent other embodiments are possible. Could be. In the embodiments, the case of three channels is exemplified, but the three or more channels are used to express the effect of temperature control intended in the present invention, and the true scope of protection of the present invention should be defined only by the appended claims. .

1 is a schematic configuration diagram illustrating a conventional semiconductor manufacturing equipment.

2 is a schematic diagram illustrating a semiconductor manufacturing equipment according to a first embodiment of the present invention.

3 is a schematic diagram illustrating a semiconductor manufacturing apparatus according to a second embodiment of the present invention.

<Explanation of symbols for the main parts of the drawings>

100, 100 '... semiconductor manufacturing equipment 105 ... shower head

W ... substrate 110 ... substrate support block

130 ... chamber 140 ...

150 Support S ... Susceptor

151.Inflow Euro 152 ... Inflow Euro

153 Circulation flow path 201 ... First fluid inflow flow path

202 ... first fluid outflow 203 ... first fluid bypass

301 ... Second fluid inflow channel 302 ... Second fluid inflow channel

303 ... 2nd fluid bypass flow path 401 ... 3rd fluid flow path

402 ... 3rd fluid outflow 403 ... 3rd fluid bypass

500 Thermocouple 510 Control Unit

V1, V2, V3, V4, V5, V6, V7, V8, V9 ... Valves

Claims (5)

delete delete A chamber in which a semiconductor manufacturing process is performed; A susceptor disposed in the chamber and supporting the substrate; A shower head disposed above the susceptor and injecting a process gas for the semiconductor manufacturing process; An inflow passage for supplying the fluid from the outside of the chamber to the susceptor and the inflow passage connected to the inflow passage so that fluid for heating or cooling the susceptor circulates inside the susceptor, and the fluid is circulated in the susceptor An outlet passage connected to the circulation passage and the circulation passage for discharging the fluid to the outside of the chamber; And By using the semiconductor manufacturing equipment including three channels comprising a fluid inlet flow passage connected to the inflow passage and a fluid outflow passage connected to the outlet flow passage and a fluid bypass flow passage connecting the fluid inflow passage and the fluid outlet flow passage, Circulating a first fluid for heating in the circulation passage through a first one of the channels to maintain the susceptor at a first set temperature; Importing a substrate on which the silicon oxide film is formed into the chamber to be seated on an upper surface of the susceptor; Spraying an etching gas through the shower head to etch the silicon oxide layer and to produce an etching byproduct on the substrate; Circulating a second fluid for heating in the circulation passage through a second one of the channels to maintain the susceptor at a second set temperature higher than the first set temperature; Removing etch byproducts on the substrate; And And circulating a third fluid for cooling in the circulation passage through a third channel of the channels to cool the susceptor and to carry the substrate out of the chamber. The method of claim 3, wherein the etching gas is a mixture of HF gas, NH ₃ gas and isopropyl alcohol (IPA), the first set temperature is 10 ℃ to 70 ℃ and the second set temperature is 110 ℃ to 200 ℃ and the temperature of the third fluid is a silicon oxide dry etching method, characterized in that lower than the first set temperature. The method of claim 3, further comprising: blocking the third fluid circulated in the circulation passage and circulating the first fluid when the first set temperature is reached when the susceptor is cooled. Silicon oxide dry etching method.

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