KR100995313B1 - Fabricating method of mold for coloring body using nanoscale structure - Google Patents

Abstract

The invention alternates (a) at least one first photoresist and at least one second photoresist on a substrate, wherein either one of the first photoresist and the second photoresist has a higher sensitivity than the other. Laminating; (b) By selectively exposing the stacked first and second photoresists to a light or electron beam, the higher sensitivity of the first and second photoresist around the exposed area reacts in a wider area. At the same time, the lower sensitivity allows the reaction in a narrower area; And (c) forming a single or multiple T-type stacked structure in which the first and second photoresists are self-aligned by performing the development. Structures, and chromosome molds prepared using the same, are provided. According to the present invention, it is possible to manufacture a chromosome mold that can be semi-permanently repeated using a hard material such as a metal, and there is an advantage in that the chromosome can be easily produced in large quantities, thereby lowering the production cost. In addition, since various kinds of materials may be injected into the chromosome mold to produce a chromosome of a desired material, the chromophor may be applied to various materials. Moreover, the structure of the nanostructures for mold making can be modified as desired, allowing various optical properties of the final chromosome to be controlled.

Morpho butterfly, photonic crystal, nano structure, chromosome mold, chromophor

Description

Fabricating method of mold for coloring body using nanoscale structure}

The present invention relates to a method for manufacturing a chromosome mold using nanostructures, and more particularly, to a method for producing a nanostructure having a self-aligned pattern and to repeatedly produce various kinds of chromosomes from such nanostructures at low cost. A method for producing a chromosome mold.

In general, the 'color' of an object can be said to be the color of the wavelength of light reflected from visible light reaching the object. These colors include pigment colors derived from pigments and structural colors resulting from diffraction, interference and scattering of light.

Zooming in on an object with a structured color with an electron microscope reveals a regular array, just like a tile on it. This geometric form is called a photonic structure, and the photonic crystal is spread out in three dimensions with a regular arrangement called a photonic crystal. One of the most common is the Morpho butterfly, which lives in tropical forests in South America. Morpho butterfly is called a living jewel, and it shines in brilliant blue with a metallic luster. There are no blue pigments on the wings of the Morpho butterfly, and because of the specificity of the wing's surface structure, the wings reflect light of blue wavelengths. Usually, there is a characteristic that varies depending on the viewing angle different from the dye color. But in the case of Morpho butterfly, the brilliant blue color does not change much even if the viewing angle is changed.

In nature, there are many light creatures besides Morpho butterflies. In the case of fern plant Selaginella, the leaf surface has a multilayer structure. Opal light structures are arranged in three dimensions, and even beetles have light structures.

Recently, photochromic fibers (eg, "Morphotex") have been developed that have been hinted at by the morphological structure of morphona butterflies. Photochromic fibers are those in which the fibers are colored without using dyes or the like that have been conventionally performed using optical physics. Photochromic fiber, which is developed by the interference of light, has a multi-layered structure in which 61 layers of two kinds of polymers (polyester and nylon) having different refractive indices are stacked in the order of tens of nanometers, and the layer thickness is led to the optical size (nano level). It develops by

Recently, researchers from the Georgia Institute of Technology's Department of Materials Science, Professor Zhong Lin Wang, have treated dried Morpho butterfly wings using low-temperature atomic layer deposition technology to produce thin aluminum oxide (alumina) on the surface of the wing. We have developed a new technology that forms a film and processes it at over 800 degrees Celsius to remove the butterfly wing used as a template, which can precisely replicate the surface structure of the butterfly wing.

However, little is known about the manufacturing technology of molds of several tens of nanometer scale to produce inexpensively and repeatedly in a desired form a chromophore having a desired structure similar to a Morpho butterfly having a multi-T laminated structure without using natural products. . In addition, pattern formation of various structures is possible for the manufacture of such nanoscale molds, and when the photolithography technique widely used in the manufacture of semiconductor integrated circuits is used, several photoresist coating, exposure, development, and alignment processes are performed. There are costs and productivity issues that need to be addressed.

SUMMARY OF THE INVENTION An object of the present invention for solving the problems of the prior art is a method that can easily produce self-aligned nanostructures without the need for multiple photolithography and alignment processes for the production of chromosome mold nanostructures To provide.

Another object of the present invention for solving the problems of the prior art is to provide a method capable of manufacturing a chromosome mold of a solid material capable of repeatedly producing a variety of chromophores inexpensively.

As technical means for solving the above problems, an aspect of the present invention

(a) alternately stacking at least one first photoresist and at least one second photoresist on the substrate, wherein either one of the first photoresist and the second photoresist has a higher sensitivity than the other ; (b) By selectively exposing the stacked first and second photoresists to a light or electron beam, the higher sensitivity of the first and second photoresist around the exposed area reacts in a wider area. At the same time, the lower sensitivity allows the reaction in a narrower area; And (c) forming a single or multiple T-type stacked structure in which the first and second photoresists are self-aligned by performing the development. do.

As a technical means for solving the above problems, another aspect of the present invention

(a) stacking a plurality of photoresists over the substrate, at least one of the photoresists having a different sensitivity than the other photoresists; (b) By selectively exposing the stacked plurality of photoresists to a light or electron beam, the higher sensitivity of the photoresist reacts in a wider area around the exposed area, while the lower sensitivity is narrower. Allowing reaction in the region; And (c) forming the photoresist to form a single or multiple T-type stacked structure in a self-aligned state by performing development.

As a technical means for solving the above problems, another aspect of the present invention

Board; And a single or multiple T-type stacked structure formed on the substrate and formed by alternately stacking a first photoresist and a second photoresist.

As a technical means for solving the above problems, another aspect of the present invention

Board; And a single or multiple T-type stacked structure formed on the substrate and made of metal.

As a technical means for solving the above problems, another aspect of the present invention

(a) a substrate; And a single or multiple T-type stacked structure formed on the substrate and formed by alternately stacking a first photoresist and a second photoresist. (b) coating a metal to bond with the substrate while filling the empty spaces between the T-shaped stacked structures of the nanostructures; And (c) removing the T-type laminated structure composed of the first and second photoresists to obtain a chromosome mold.

As a technical means for solving the above problems, another aspect of the present invention

(a) a substrate; And a single or multiple T-type stacked structure formed on the substrate and made of metal; (b) injecting and curing a molding material to fill an empty space between the T-shaped stacked structures of the nanostructures; And (c) separating the cured molding material from the nanostructure to obtain a chromosome mold.

As a technical means for solving the above problems, another aspect of the present invention

(a) providing a chromosome mold transparent to ultraviolet rays produced according to the above production method; (b) applying a photocurable material on the substrate; (c) compressing the photocurable material on the substrate to which the photocurable material is coated with the chromosome mold to allow the photocurable material to penetrate into the empty space of the chromosome mold; (d) transmitting ultraviolet rays through the chromosome mold to cure the photocurable material under the chromosome mold; And (e) separating the chromosome mold to obtain a chromophore having a pattern of a single or multiple T-type laminated structure composed of the cured photocurable material on the substrate. do.

According to the present invention, there is an advantage that a nanostructure having a T-type stacked structure can be easily obtained without having to undergo several photolithography and alignment processes for forming a nanostructure having a T-type stacked structure.

In addition, it is possible to manufacture a chromosome mold that can be used semi-permanently repeatedly with a hard material such as metal, there is an advantage that can be produced in a large amount easily from the chromosome can lower the production cost.

In addition, since various kinds of materials may be injected into the chromosome mold to produce a chromosome of a desired material, the chromophor may be applied to various materials.

Moreover, the structure of the nanostructures for mold making can be modified as desired, allowing various optical properties of the final chromosome to be controlled.

Hereinafter, the present invention will be described in detail with reference to the drawings.

1 to 4 are diagrams for explaining each step of the method for manufacturing a nanostructure having a T-type laminated structure.

Photolithography techniques can be used to make nanostructures with T-shaped stacked structures on a substrate. In this case, in order to make such a structure, a complicated process of applying a photoresist on a substrate and aligning it after exposure and development is generally followed, but according to the present invention, there is no need to go through the alignment process. It is possible to obtain a nanostructure having a T-type laminated structure that is simply self-aligned by exposure alone.

Referring to FIG. 1, first, a substrate 100 is prepared. Various substrates may be used as the substrate 100, and the substrate 100 may be, for example, a semiconductor substrate (eg, a silicon substrate), a glass substrate, or a plastic substrate. Preferably, for the subsequent plating process, the substrate 100 is a conductive substrate or a substrate coated with a conductive material (for example, gold, silver, nickel, aluminum, tin, platinum, and the like).

Next, as shown in FIG. 2, the first photoresist 120 is coated on the substrate 100, and the second photoresist 130 is coated thereon. Preferably, one of the first photoresist and the second photoresist has higher sensitivity than the other.

In this specification, the sensitivity may be a sensitivity to a developer, and generically refers to various factors that may change the size of the pattern after exposure, such as photosensitivity of a material. In addition, each photoresist may be replaced with a material that can be developed by another material or a specific material such as electron beam resist, depending on the irradiation conditions.

 Each of the first and second photoresists 120 and 130 may be both positive or negative photoresist.

Examples of the first photoresist and the second photoresist may be any photoresist with different sensitivity. For example, in the case of polymethyl methacrylate (PMMA), different sensitivity characteristics can be realized simply by varying the molecular weight and the degree of dilution of the dispersion solvent. For example, when 950PMMA and 495PMMA are used as the first photoresist and the second photoresist, the 950PMMA reacts with the developer slower than 450PMMA in the developing step, so that a T-shaped structure to be described later can be manufactured. . The type and composition ratio of the dilute solvent of PMMA may be different. In addition, even if the first photoresist and the second photoresist are composed of different materials having different sensitivity, it is possible to produce patterns of different sizes aligned in one exposure. The photoresist coating method may be various coating methods such as spin coating, spray coating, dip coating, and the like. Most photoresists solidify by evaporating the solvent through a soft bake after coating. The above application and baking process can be repeated to deposit multiple layers of photoresist.

The photoresist may be laminated using a block copolymer.

Block copolymers are polymers in which polymer blocks having different chemical structures are connected through covalent bonds. The different blocks within a molecule cause phase separation to form nanostructures of various shapes and sizes in a self-assembled manner.

Thus, block copolymers can be used to make a multilayered photoresist layer of self-assembly by a single coating and baking process.

After applying the first photoresist 120, a soft baking process is performed to improve adhesion with drying of the first photoresist. Thereafter, the process of applying and softbaking the second photoresist 130 is repeated. In this manner, the first and second photoresists 120 and 130 coated on the substrate in an iterative order may be obtained.

Referring to FIG. 3, light or electron beams are selectively exposed to the first and second photoresists 120 and 130. Selective exposure of the light or electron beam can be performed in a variety of ways. By way of example, selective exposure schemes used in electron beam lithography, interference lithography or photolithography may be used.

If each of the first and second photoresists 120 and 130 is a negative photoresist, curing of the photoresist occurs in the exposed area. At this time, if the sensitivity of the second photoresist 130 is higher than that of the first photoresist 120, the first photoresist 120 has a relatively low sensitivity, and thus, the first photoresist 120 has a relatively low sensitivity. Curing takes place in region 120A. In contrast, since the second photoresist 130 has a relatively high sensitivity, curing is performed in a relatively wide region 130A around the exposed region.

Since the curing process occurs simultaneously in the photoresist region through which the light or electron beams are transmitted, a reaction may occur to produce a desired T-type stacked structure even when the light or electron beam is exposed only once.

In this case, it is assumed that a region other than the exposed region shown in FIG. 3 is selectively exposed to light or an electron beam.

If each of the first and second photoresists 120 and 130 is a positive photoresist, decomposition of the photoresist occurs in the exposed region. At this time, if the sensitivity of the second photoresist 130 is lower than the sensitivity of the first photoresist 120, the first photoresist 120 has a relatively high sensitivity, and thus, the first photoresist 120 has a relatively high sensitivity. Decomposition occurs in the region (except 120A for 120A). On the contrary, since the second photoresist 130 has a relatively low sensitivity, decomposition occurs in a relatively narrow region (parts 130 to 130A except for the exposed region).

Referring to Figure 4, after the development is carried out to obtain a laminated structure 140 having a T-shaped cross section.

When the development is performed, it may be developed with one or more developer in accordance with the material properties of the applied photoresist. In order to develop a plurality of layers of photoresists, only one developer may be developed at a time. In this case, the difference in the degree of development is indicated by the difference in the degree of development for the developer according to the photoresist or the difference in the exposure area that occurred during the exposure process.

In addition, in the case of using a variety of developer solutions, it is possible to use developers that selectively develop each photoresist and simultaneously do not develop another photoresist. In this case, development is performed while changing the developer by the number of stacked layers.

Through this development step, the uncured or degraded photoresist is removed. As described above, since the first photoresist 120 and the second photoresist 130 have a difference in reactivity, a nanostructure for forming the T-type stacked structure 140 on the substrate 100 as shown in FIG. 4 may be manufactured. Can be.

According to the above method, in order to form the T-type stacked structure 140 on the substrate 100, it is necessary to repeat the process of stacking photoresist, photolithography, aligning, stacking photoresist and photolithography again. Without, it is possible to easily produce a nanostructure having a self-aligned T-type stacked structure 140.

5 to 8 are diagrams for explaining each step of the method for manufacturing a nanostructure having an inverse T-shaped laminated structure.

This is almost similar to the method of manufacturing the nanostructures described in FIGS. 1 to 4. 5 and 6 illustrate the steps of applying and stacking the first and second photoresists 120 and 130 on the substrate 100 as described above with reference to FIGS. 1 and 2.

As described above, any one of the first and second photoresists 120 and 130 may have higher sensitivity than the other one, and each may be a positive photoresist or a negative photoresist.

Referring to FIG. 7, light or electron beams are selectively exposed to the first and second photoresists 120 and 130. Selective exposure of the light or electron beam can be performed in a variety of ways. By way of example, selective exposure schemes used in electron beam lithography, interference lithography or photolithography may be used.

If each of the first and second photoresists 120 and 130 is a negative photoresist, curing of the photoresist occurs in the exposed area. At this time, if the sensitivity of the second photoresist 130 is lower than the sensitivity of the first photoresist 120, the first photoresist 120 has a relatively high sensitivity, so that curing is performed in a relatively wide area 120A. Is done. On the contrary, since the second photoresist 130 has a relatively low sensitivity, curing is performed in a relatively narrow region 130A.

In this case, it is assumed that a region other than the exposed region shown in FIG. 7 is selectively exposed to light or an electron beam.

If each of the first and second photoresists 120 and 130 is a positive photoresist, decomposition of the photoresist occurs in the exposed region. At this time, if the sensitivity of the second photoresist 130 is higher than the sensitivity of the first photoresist 120, the first photoresist 120 has a relatively low sensitivity. Decomposition takes place). On the contrary, since the second photoresist 130 has a relatively high sensitivity, decomposition occurs in a relatively large region (parts 130 except 130A).

Referring to FIG. 8, the development is then performed to obtain a stacked structure 150 having a T-shaped inverse cross section.

Through this development step, the uncured or degraded photoresist is removed. As described above, since the first photoresist 120 and the second photoresist 130 have a difference in reactivity, a nanostructure for forming an inverted T-type stacked structure 150 on the substrate 100 may be manufactured. .

 1 to 4 and 5 to 8, a T-type or an inverted T-type stacked structure may be formed on a substrate depending on whether the sensitivity of each photoresist is high depending on whether the photoresist is positive or negative.

By using the above method, a nanostructure having a structure in which a T-type is stacked twice can be manufactured.

9 to 12 are diagrams for explaining each step of the method for producing a nanostructure having a double T-type laminated structure.

9 shows a step of preparing the substrate 100, and FIG. 10 shows a step of applying the first photoresist 120 and the second photoresist 130 and alternately stacking them twice.

When the light or electron beam is irradiated under the same conditions as described above in the steps of FIGS. 1 to 4, as shown in FIG. 11, the regions 120A and 130A are cured or other regions are decomposed and then subjected to a development step, as shown in FIG. 12. A nanostructure having a double T-type stacked structure 160 on the substrate 100 may be obtained.

It is also possible to manufacture a nanostructure having a double T-shaped laminate inverted in this manner.

13 to 16 are diagrams for explaining each step of the method for manufacturing a nanostructure having an inverted double T-type laminated structure.

Referring to this, FIG. 13 shows a step of preparing the substrate 100, and FIG. 14 shows a step of applying the first photoresist 120 and the second photoresist 130 and alternately stacking them twice.

 In addition, when the light or electron beam is irradiated under the same conditions as described above in the steps of FIGS. 5 to 8, as shown in FIG. 11, the 120A and 130A regions are cured or the other regions are decomposed, and as shown in FIG. A nanostructure having an inverted double T-type stacked structure 170 on the substrate 100 can be obtained (FIG. 16).

Using the method of FIGS. 9 to 12 and 13 to 16 as described above, it is possible to obtain nanostructures having triple, quadruple, or more multi-T stacked structures as necessary. Where the T-type includes an inverse form.

FIG. 17 is a cross-sectional view of a nanostructure having a multi-T stacked structure, and FIG. 18 is a cross-sectional view of a nanostructure having a multi-T stacked structure upside down.

In other words, if the above-described manufacturing method is applied; And it can be seen that a variety of nanostructures formed on the substrate and having a multi-T stacked structure (180, 190) formed by alternately stacking the first photoresist and the second photoresist.

Until now, using the above-described manufacturing method has a feature that can be produced T-shaped nanostructure using only one patterning process. In addition, the cured (or disassembled and remaining) first photoresist 120A and the cured (or disassembled and remaining) second photoresist 130A are self-aligned (self-aligned). In other words, this patterning method does not require the use of multiple masks to achieve the correct arrangement of the patterns. According to this method, since the size of the pattern is determined by the sensitivity of the photoresist, this method is naturally a process of using a single mask considering the characteristics of the structure of the nanometer scale, which is difficult to obtain a pattern that is accurately aligned in the general method. The advantage is that the patterns are aligned.

In addition, although the above embodiment uses two different photoresists, three or more different photoresists may be used.

It may also be a periodic structure in which a photoresist and a different kind of photoresist are regularly stacked or irregularly stacked aperiodic structures.

In addition, the thickness of each layer may be changed according to the number of application of each photoresist, and the width of the laminated structure is changed after development according to the difference in sensitivity of the photoresist, thereby controlling the size of the T-shaped structure.

By applying such a process, various kinds of nanoscale nanostructures can be manufactured, and these nanostructures can then be used for chromosome mold manufacturing.

Nanostructures of the present specification is a structure having a T-type laminated structure of about tens to hundreds of nm specification, the material of the T-type laminated structure is made of photoresist as in the above examples. However, since the photoresist material is not strong enough to use such a nanostructure as a chromosome mold, the material of the T-type laminated structure may be made of metal so that the nanostructure may be used as a mold for producing a chromosome.

Hereinafter, a method of manufacturing the metal nanostructure is described in detail.

First, nanostructures are prepared according to the method described in FIGS. 1 to 16. Next, the metal is plated so as to be bonded to the substrate while filling the empty space between the T-shaped stacked structures of the nanostructures. For such plating, it is preferable to use a conductive substrate so that a current flows or a substrate having a metal layer formed as a seed layer before or after forming the laminated structure. Finally, by removing the T-type laminated structure, it is possible to manufacture a new metal nanostructure having a reverse phase with the original nanostructure.

The mold for producing a chromosome from the nanostructure may be prepared by the following method.

19 to 22 are views for explaining each step of manufacturing a chromosome mold of a metal material.

Referring to FIG. 19, first, a substrate 100; And a single or multiple T-type stacked structure 170 formed on the substrate and formed by alternately stacking a first photoresist and a second photoresist. Such nanostructures can be produced by any method including the above-described manufacturing method.

Next, the empty space 170A between the T-shaped stacked structures 170 of the nanostructures is filled with a metal to be bonded to the substrate 100.

The reason for the coating with metal is that if the material of the mold is not a metal, its life will be shortened by repeated use, so a new mold must be made from the nanostructure at the end of its life. In addition, in the fabrication of nanostructures, since it takes a lot of time and cost to manufacture by photoresist coating and photolithography process, in order to avoid such risks that can occur by using nanostructures containing weakly durable photoresist as it is. The coating step is preferably performed by plating or pre-plating metal. For example, referring to FIG. 20 as a method of plating a metal on a plated material by using electrolysis, the nanostructure is immersed in an electrolytic cell 230 containing a metal salt solution 220 of the metal 210 to be plated. After that, the conductive substrate of the nanostructure 200 is connected to the cathode of the power source, and the metal 210 is connected to the anode of the power source, and then electroplating is performed by flowing a current, and the metal is electrodeposited onto the nanostructure. The metal to be used is preferably nickel or copper. Plating and electroplating are distinguished by their thickness. In general, plating is 0.001 mm to 0.05 mm, whereas electroplating is possible to 0.0025 to 25 mm. Especially for electroplating, record disc, printing roll, mold manufacturing, etc. Suitable. Therefore, by adjusting the conditions as necessary, the metal can be coated to a desired thickness.

Referring to FIG. 21, it can be seen that the metal may be coated in the empty space 170A between the T-type stacked structures 170 by coating with metal as described above.

Finally, the chromosome mold 300 of the metal material is obtained by removing the T-type laminated structure formed of the first and second photoresists to obtain a chromosome mold including the substrate 100 and the metal T-type structure 310. ) Can be prepared (FIG. 22).

Wet and dry methods can be used to remove the photoresist. For example, a wet method such as acetone, methanol, and deionized water, or a dry method such as plasma ashing can be used.

The metal chromosome mold 300 manufactured as described above is excellent in durability and may repeatedly produce chromophores therefrom.

In addition, the chromosome mold itself may be produced by a molding method like a chromophore.

23 to 26 are diagrams for explaining each step of another method of manufacturing a chromosome mold.

Referring to FIG. 23, first, a substrate; And a single or multiple T-type stacked structure formed on the substrate and made of metal. This nanostructure 300 may be manufactured by any method including the above-described manufacturing method.

Next, a molding material is injected (FIG. 24) and cured (FIG. 25) to fill an empty space between the T-shaped stacked structures of the nanostructures.

Finally, the cured molding material may be separated from the nanostructure to obtain a chromosome mold, thereby preparing a new chromosome mold 400 (FIG. 26).

The cured molding material is required to be flexible to maintain the T-shape without disturbing its shape upon separation. Also, unless specifically indicated throughout the present specification, the T-type laminate includes an inverted T-type.

Thus, a chromosome mold made using a molding material may be directly used as a chromophor in some cases.

Here, as a material capable of molding, the mechanical strength is sufficient to be used as a mold, and the type is not particularly limited as long as it is flexible to be separated from the nanostructure, but it is an optical material that can effectively generate reflection and interference of light rays. Thermoplastic polymers are preferable in view of properties and easy formability, and the chromosome mold 400 may be manufactured by melting and injecting the same into the container 310 in which the chromosome mold or the nanostructure 300 is located.

The thermoplastic polymer here is polypropylene, polyvinylidene fluoride, nylon, polyvinyl alcohol, polyethylene terephthalate, polystyrene, polymethyl methacrylate ester, polycarbonate, polyester ether ketone, polyparaphenylene terephthalate amide, polyphenylene sulfide And it may be one or more selected from the group consisting of copolymers thereof.

In addition, the molding material may be a liquid silicone rubber. For example, polydimethylsiloxane is preferred.

Since the nanostructure or the chromosome mold made of metal is expensive and complicated, the nanostructure or the chromosome mold made of the metal is manufactured and then the reversed chromosome mold is formed by using the molding material as described above. By remanufacturing, it is possible to produce chromosomes at a lower cost in large quantities using them.

Next, referring to FIGS. 27 to 30, a process of making a chromosome using a chromosome mold made of such a molding material will be described.

For example, first, a chromosome mold 400 made of a molding material is prepared (FIG. 27). The chromosome 500 can be prepared by injecting a molding material into the chromosome mold (FIG. 28), curing (FIG. 29), and then separating it from the chromosome mold (FIG. 30).

The molding material that can be injected into the chromophor mold 400 may include various kinds of materials in addition to the above materials, and may produce a chromophor of a desired material as necessary. The chromophore prepared as described above can be applied to various materials such as fibers and display devices.

Next, another method for producing a chromosome using the chromosome mold according to the present invention will be described.

31 to 34 is a view showing a method for producing a chromosome by nanoimprinting according to an embodiment of the present invention.

Referring to FIG. 31, first, a chromosome mold 410 manufactured according to the above-described manufacturing method is provided.

The chromosome mold 410 is used as a stamp for nanoimprinting. In this case, the chromosome mold 410 is preferably a transparent material through which ultraviolet rays can be transmitted to suit the subsequent ultraviolet irradiation process.

Next, a photocurable material layer 710 is applied onto the predetermined substrate 700. The photocurable material is a low-viscosity material that can be cured by reacting with ultraviolet rays, and the coating method may be various coating methods such as spin coating, spray coating, and dip coating.

Next, referring to FIG. 32, the photocurable material 710 penetrates into the empty space of the chromophor mold 410 by compressing a portion of the substrate 700 on which the photocurable material 710 is applied by the chromophor mold 410. Do it.

Thereafter, as shown in FIG. 33, ultraviolet rays are transmitted to the chromosome mold 410 to cure the photocurable material under the chromosome mold 410. The photocurable material 710 is polymerized by the transmitted ultraviolet rays to cure.

Subsequently, as shown in FIG. 34, the chromosome mold 410 is separated to obtain a chromophore having a pattern of a single or multiple T-type stacked structure made of a photocurable material 720 cured on the substrate 700. At this time, the photocurable material should have good reactivity with the activation wavelength of the material when cured by light, and preferably has a selectivity that can be attached only to the substrate 700 and not to the mold during release.

The photocurable material may be a liquid silicone rubber. For example, it is preferable that it is polydimethylsiloxane.

Hereinafter, the reason for making a chromophor having various optical properties will be described in more detail.

The chromophore has a single or multiple T-type stacked structure of nanometer scale, and the optical properties of the chromophore vary depending on the shape of the material constituting it or the shape and dimensions of each part thereof.

The size of the chromosome is determined by the mold required to mold it, and the size of the mold can be said to be almost the same as that of the nanometer-scale nanostructure, which is the form of the previous stage for mold manufacturing.

35 is a view for explaining that the specifications of the manufactured chromosome can be variously adjusted.

Referring to FIG. 35, the height 501 of the chromophore and the structure by adjusting various process variables such as pattern shape, photoresist type, photoresist coating frequency, exposure range of light or electron beam, etc. in the manufacturing step of the nanostructure before mold formation. Layer thickness 502, spacing 503 between structure layers, height direction period 504, central axis thickness 505, chromosome width 506, distance 507 between each T-shaped laminate on a substrate, and the like. Many sizes can be varied. In addition, non-periodic elements can be placed throughout the specification of the structure to prevent interference from the periodic structure and scattering in various directions, so that the color can be evenly distributed over a wide viewing angle range.

Depending on the desired optical properties, preferably the height 501 of the chromophore has a value between 200 nm and 5 μm, depending on the number of stacked layers, and the structure layer thickness 502 is between 10 nm and 1 μm, between the structure layers. The interval 503 is 10 nm to 1 μm, the height direction period 504 is 20 nm to 1 μm, the central axis thickness 505 is 10 nm to 1 μm, and the chromosome width 506 is visible in the range of 20 nm to 1 μm. Color development of the ray region can be obtained. The distance between the T-type stacked structure 507 affects the degree of reflection of light, which is determined to be greater than or equal to 100 times of the chromosome width 506 and less than 100 times the chromosome width 506.

Therefore, since the structure of the nanostructure for manufacturing a mold can be changed as desired, optical properties such as reflection and transmission intensity, spectral characteristics, and viewing angle of the final chromophore can be variously adjusted.

The color development of such a structure is determined by the difference in refractive index between the material constituting the structure and the background material (including air), the thickness of the structure layer 502, the spacing 503 between the structure layers, and the like. Since the T-type laminated structure generally reflects and develops a specific wavelength range of the light illuminated by the interference of light in the multi-layered structure, the thickness of each layer of the T-type structure is different from that of the structure and the background material. It is important to achieve the proper ratio for the refractive index. When materials having the same refractive index are used, as the structure layer thickness 502 and the spacing 503 between the structure layers increase, the size of the wavelength that satisfies the condition that the light reflected from each layer forms a constructive interference pattern increases. Therefore, color development occurs in the red region where the wavelength of light is long. On the contrary, as the structure layer thickness 502 and the space 503 between the structure layers decrease, the color of the blue region becomes more pronounced.

Based on the multi-T structure, the results of optical simulations showed the relationship between color development and structure size and thickness.

36 is a view showing results of performing optical simulation according to the thickness of a multi-T structure. In the case of Fig. 36, a double T-type structure is taken as an example.

Referring to this, as the distance 503 between the structure layer thickness 502 and the structure layer increases, it can be seen that the color develops in a long wavelength region. The ratio of the size of the structure layer thickness 502 and the spacing 503 between the structure layers is constant in all three cases, which is a value determined by the difference in refractive index of the two materials. The structure layer thickness 502 for color development is greatly influenced by the refractive index of the material and generally satisfies the color development conditions when the light paths in the respective layers 502 and 503 of the T-type structure are the same. The optical path in each layer is obtained by multiplying the refractive index of the layer (eg, the refractive index of the structure and the refractive index of the background material, such as air), by considering the vertical incidence and reflection. The actual thickness of the structure is about 10 nm to 1 μm, depending on the refractive index of the material and the wavelength and material of the color to be developed. It is expected that as the number of T-type stacks is increased, the sharper spectrum will be clearer, but a sufficient color spectrum can be obtained with the two-layer structure.

As described above, according to the present invention, a chromophor having a desired color spectrum can be easily produced in large quantities using a mold.

As described above, although the present invention has been described by way of limited embodiments, the present invention is not limited thereto, and various modifications and variations are possible to those skilled in the art to which the present invention pertains. Therefore, the scope of the present invention should not be limited to the described embodiments, but should be determined not only by the claims below but also by the equivalents of the claims.

1 to 4 are diagrams for explaining each step of the method for manufacturing a nanostructure having a T-type laminated structure.

5 to 8 are diagrams for explaining each step of the method for manufacturing a nanostructure having an inverted T-shaped laminated structure.

9 to 12 are diagrams for explaining each step of the method for producing a nanostructure having a double T-type laminated structure.

13 to 16 are diagrams for explaining each step of the method for manufacturing a nanostructure having an inverted double T-type laminated structure.

17 is a cross-sectional view of a nanostructure having a multi-T stacked structure.

18 is a cross-sectional view of a nanostructure having an inverted multiple T-shaped stacked structure.

19 to 22 are views for explaining each step of the method for manufacturing a metal chromosome mold.

23 to 26 are diagrams for explaining each step of another method of manufacturing a chromosome mold.

27 to 30 is a view showing a process for producing a chromosome using a chromosome mold made of a molding material.

31 to 34 is a view showing a method for producing a chromosome by nanoimprinting.

35 is a view for explaining that the specifications of the manufactured chromosome can be variously adjusted.

36 is a view showing results of performing optical simulation according to the thickness of a multi-T structure.

<Description of the symbols for the main parts of the drawings>

100 ........ substrate 120 ............ first photoresist

130 ........ 2nd photoresist 180, 190 ... T type laminated structure

200, 300 ... nano structure 400 ........ chromoform mold

500 ....... chromosome

Claims (24)

(a) at least one first photoresist and at least one second photoresist on the substrate, wherein either one of the first photoresist and the second photoresist has a higher sensitivity than the other. Alternately stacking by self-assembly; (b) By selectively exposing the stacked first and second photoresists to a light or electron beam, the higher sensitivity of the first and second photoresist around the exposed area reacts in a wider area. At the same time, the lower sensitivity allows the reaction in a narrower area; And (c) performing development to form single or multiple T-type stacked structures with the first and second photoresists self-aligned. Method of producing a nanostructure comprising a. The method of claim 1, The substrate is a method of manufacturing a nanostructure, characterized in that the conductive substrate or a conductive material coated. The method of claim 1, In the step (a), the method of manufacturing a nanostructure, characterized in that the lamination by applying, drying and baking the first and second photoresist. delete The method according to any one of claims 1 to 3, The first and second photoresist is a negative resist, In the step (b), the photoresist having a relatively low sensitivity is cured in a relatively narrow area, the photoresist having a relatively high sensitivity is cured in a relatively wide area Method of preparation. The method according to any one of claims 1 to 3, The first and second photoresists are positive resists, In the step (b), the photoresist having a relatively low sensitivity is a decomposition in a relatively narrow region, the photoresist having a relatively high sensitivity is a nano structure, characterized in that the decomposition in a wide area Method of preparation. The method according to any one of claims 1 to 3, In the step (b), the method of manufacturing a nanostructure, characterized in that the reaction can be reacted even if only one exposure of the light or beam. The method according to any one of claims 1 to 3, (d) coating with metal to fill the void spaces between the T-shaped stacked structures of the nanostructures and bonding to the substrate; And (e) removing the T-type stacked structure composed of the first and second photoresists. Method of producing a nanostructure, characterized in that it further comprises. (a) depositing a plurality of photoresists on the substrate by self-assembly of a block copolymer, wherein at least one of the photoresists has a different sensitivity than the other photoresists; (b) By selectively exposing the stacked plurality of photoresists to a light or electron beam, the higher sensitivity of the photoresist reacts in a wider area around the exposed area, while the lower sensitivity is narrower. Allowing reaction in the region; And (c) performing development to form a single or multiple T-type stacked structure with the photoresist self-aligned. Method of producing a nanostructure comprising a. The method according to any one of claims 1 to 3 and 9, Method of manufacturing a nanostructure, characterized in that to form a T-type laminated structure of a desired standard by adjusting at least one of the type of photoresist, the number of coating or the exposure range of the light or electron beam. Board; And A nanostructure comprising: a single or multiple T-type stacked structure formed on the substrate and formed by alternately stacking a first photoresist and a second photoresist. The chromosome of the nanostructure or the chromophore generated from the nanostructure can reflect the desired wavelength range by the interference phenomenon of light, The height 501 of the chromophore has a value of 200 nm to 5 μm according to the number of stacked layers, the structure layer thickness 502 is 10 nm to 1 μm, the spacing 503 between the structure layers is 10 nm to 1 μm, The height direction period 504 is 20nm to 1㎛, the central axis thickness 505 is 10nm to 1㎛, the chromosome width 506 varies in the range of 20nm to 1㎛, the distance between the T-shaped laminated structure 507 is Nanostructure having a value of 1 to 100 times the chromosome width 506. Board; And A nanostructure comprising: a single or multiple T-type stacked structure formed on the substrate and made of metal, The chromosome of the nanostructure or the chromophore generated from the nanostructure can reflect the desired wavelength range by the interference phenomenon of light, The height 501 of the chromophore has a value of 200 nm to 5 μm according to the number of stacked layers, the structure layer thickness 502 is 10 nm to 1 μm, the spacing 503 between the structure layers is 10 nm to 1 μm, The height direction period 504 is 20nm to 1㎛, the central axis thickness 505 is 10nm to 1㎛, the chromosome width 506 varies in the range of 20nm to 1㎛, the distance between the T-shaped laminated structure 507 is Nanostructure having a value of 1 to 100 times the chromosome width 506. delete 13. The method according to claim 11 or 12, And the T-type stacked structure further comprises an aperiodic element. (a) a substrate; And Providing a nanostructure including a single or multiple T-type stacked structure formed on the substrate and formed by alternately stacking a first photoresist and a second photoresist; (b) coating a metal to bond with the substrate while filling the empty spaces between the T-shaped stacked structures of the nanostructures; And (c) removing the T-type laminated structure composed of the first and second photoresists to obtain a chromosome mold. Method for producing a chromosome mold comprising a. The method of claim 15, The substrate is a method of manufacturing a chromosome mold, characterized in that the conductive substrate or coated with a conductive material. The method of claim 15, The coating step is a method of manufacturing a chromosome mold, characterized in that performed by plating or pre-plating a metal. (a) a substrate; And Providing a nanostructure including a single or multiple T-type stacked structure formed on the substrate and made of metal; (b) injecting and curing a molding material to fill an empty space between the T-shaped stacked structures of the nanostructures; And (d) separating the cured molding material from the nanostructures to obtain a chromosome mold Method for producing a chromosome mold comprising a. The method of claim 18, In performing the step (b), the molding material is a thermoplastic polymer, characterized in that the injection of the thermoplastic polymer melt manufacturing method. The method of claim 19, The thermoplastic polymer is polypropylene, polyvinylidene fluoride, nylon, polyvinyl alcohol, polyethylene terephthalate, polystyrene, polymethyl methacrylate ester, polycarbonate, polyester ether ketone, polyparaphenylene terephthalate amide, polyphenylene sulfide And at least one selected from the group consisting of copolymers thereof. The method of claim 18, The molding material is a manufacturing method of a chromosome mold, characterized in that the liquid silicone rubber. (a) providing a chromosome mold transparent to ultraviolet rays prepared according to the method of any one of claims 15 to 18; (b) applying a photocurable material on the substrate; (c) compressing the photocurable material on the substrate to which the photocurable material is coated with the chromosome mold to allow the photocurable material to penetrate into the empty space of the chromosome mold; (d) transmitting ultraviolet rays through the chromosome mold to cure the photocurable material under the chromosome mold; And (e) separating the chromosome mold to obtain a chromophore having a pattern of a single or multiple T-type laminated structure composed of the cured photocurable material on the substrate; Method for producing a chromosome comprising a. The method of claim 22, In the step (d), the photocurable material has a selectivity that can be attached only to the substrate without sticking to the mold during mold release. The method of claim 22, The photocurable material is a liquid silicone rubber, characterized in that the manufacturing method of the chromophore.

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