KR100976988B1 - 신규 폴리머, 폴리머 합성 방법 및 포토레지스트 조성물 - Google Patents

신규 폴리머, 폴리머 합성 방법 및 포토레지스트 조성물 Download PDF

Info

Publication number
KR100976988B1
KR100976988B1 KR1020037011229A KR20037011229A KR100976988B1 KR 100976988 B1 KR100976988 B1 KR 100976988B1 KR 1020037011229 A KR1020037011229 A KR 1020037011229A KR 20037011229 A KR20037011229 A KR 20037011229A KR 100976988 B1 KR100976988 B1 KR 100976988B1
Authority
KR
South Korea
Prior art keywords
substituted
unsubstituted
polymerization
delete delete
reaction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020037011229A
Other languages
English (en)
Korean (ko)
Other versions
KR20040030516A (ko
Inventor
바클레이조지지.
카포레일스테판제이.
카바나흐로버트제이.
푸글리아노니콜라스
Original Assignee
롬 앤드 하스 일렉트로닉 머트어리얼즈, 엘.엘.씨
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 롬 앤드 하스 일렉트로닉 머트어리얼즈, 엘.엘.씨 filed Critical 롬 앤드 하스 일렉트로닉 머트어리얼즈, 엘.엘.씨
Publication of KR20040030516A publication Critical patent/KR20040030516A/ko
Application granted granted Critical
Publication of KR100976988B1 publication Critical patent/KR100976988B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F232/00—Copolymers of cyclic compounds containing no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F234/00—Copolymers of cyclic compounds having no unsaturated aliphatic radicals in a side chain and having one or more carbon-to-carbon double bonds in a heterocyclic ring
    • C08F234/02—Copolymers of cyclic compounds having no unsaturated aliphatic radicals in a side chain and having one or more carbon-to-carbon double bonds in a heterocyclic ring in a ring containing oxygen
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F234/00—Copolymers of cyclic compounds having no unsaturated aliphatic radicals in a side chain and having one or more carbon-to-carbon double bonds in a heterocyclic ring
    • C08F234/04—Copolymers of cyclic compounds having no unsaturated aliphatic radicals in a side chain and having one or more carbon-to-carbon double bonds in a heterocyclic ring in a ring containing sulfur
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2012—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image using liquid photohardening compositions, e.g. for the production of reliefs such as flexographic plates or stamps
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
KR1020037011229A 2001-02-27 2002-02-26 신규 폴리머, 폴리머 합성 방법 및 포토레지스트 조성물 Expired - Fee Related KR100976988B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US27140101P 2001-02-27 2001-02-27
US60/271,401 2001-02-27
PCT/US2002/005609 WO2002069040A1 (en) 2001-02-27 2002-02-26 Novel polymers, processes for polymer synthesis and photoresist compositions

Related Child Applications (2)

Application Number Title Priority Date Filing Date
KR1020097008576A Division KR100970661B1 (ko) 2001-02-27 2002-02-26 신규 폴리머, 폴리머 합성 방법 및 포토레지스트 조성물
KR1020107003751A Division KR20100025596A (ko) 2001-02-27 2002-02-26 신규 폴리머, 폴리머 합성 방법 및 포토레지스트 조성물

Publications (2)

Publication Number Publication Date
KR20040030516A KR20040030516A (ko) 2004-04-09
KR100976988B1 true KR100976988B1 (ko) 2010-08-19

Family

ID=23035387

Family Applications (3)

Application Number Title Priority Date Filing Date
KR1020037011229A Expired - Fee Related KR100976988B1 (ko) 2001-02-27 2002-02-26 신규 폴리머, 폴리머 합성 방법 및 포토레지스트 조성물
KR1020097008576A Expired - Fee Related KR100970661B1 (ko) 2001-02-27 2002-02-26 신규 폴리머, 폴리머 합성 방법 및 포토레지스트 조성물
KR1020107003751A Ceased KR20100025596A (ko) 2001-02-27 2002-02-26 신규 폴리머, 폴리머 합성 방법 및 포토레지스트 조성물

Family Applications After (2)

Application Number Title Priority Date Filing Date
KR1020097008576A Expired - Fee Related KR100970661B1 (ko) 2001-02-27 2002-02-26 신규 폴리머, 폴리머 합성 방법 및 포토레지스트 조성물
KR1020107003751A Ceased KR20100025596A (ko) 2001-02-27 2002-02-26 신규 폴리머, 폴리머 합성 방법 및 포토레지스트 조성물

Country Status (4)

Country Link
US (2) US6841331B2 (https=)
JP (1) JP2004524564A (https=)
KR (3) KR100976988B1 (https=)
WO (1) WO2002069040A1 (https=)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6841331B2 (en) * 2001-02-27 2005-01-11 Shipley Company, L.L.C. Polymers, processes for polymer synthesis and photoresist compositions
DE10203839B4 (de) * 2002-01-31 2007-10-18 Infineon Technologies Ag Resist für die Fotolithografie mit reaktiven Gruppen für eine nachträgliche Modifikation der Resiststrukturen
TWI349831B (en) * 2003-02-20 2011-10-01 Maruzen Petrochem Co Ltd Resist polymer and method for producing the polymer
US20050160934A1 (en) 2004-01-23 2005-07-28 Molecular Imprints, Inc. Materials and methods for imprint lithography
US7307118B2 (en) 2004-11-24 2007-12-11 Molecular Imprints, Inc. Composition to reduce adhesion between a conformable region and a mold
TWI371657B (en) * 2004-02-20 2012-09-01 Fujifilm Corp Positive resist composition for immersion exposure and method of pattern formation with the same
US8076386B2 (en) * 2004-02-23 2011-12-13 Molecular Imprints, Inc. Materials for imprint lithography
US7759407B2 (en) 2005-07-22 2010-07-20 Molecular Imprints, Inc. Composition for adhering materials together
US8557351B2 (en) 2005-07-22 2013-10-15 Molecular Imprints, Inc. Method for adhering materials together
US8808808B2 (en) 2005-07-22 2014-08-19 Molecular Imprints, Inc. Method for imprint lithography utilizing an adhesion primer layer
JP4774252B2 (ja) * 2005-08-17 2011-09-14 富士フイルム株式会社 ポジ型レジスト組成物、該ポジ型レジスト組成物の製造方法及び該ポジ型レジスト組成物を用いたパターン形成方法
KR100688569B1 (ko) * 2005-08-30 2007-03-02 삼성전자주식회사 플루오르를 함유하는 탑 코팅 조성물과 이를 이용한포토레지스트 패턴 형성 방법
US8142703B2 (en) 2005-10-05 2012-03-27 Molecular Imprints, Inc. Imprint lithography method
JP5215228B2 (ja) * 2009-04-16 2013-06-19 株式会社ダイセル フォトレジスト用樹脂組成物の製造法
US8541523B2 (en) 2010-04-05 2013-09-24 Promerus, Llc Norbornene-type polymers, compositions thereof and lithographic process using such compositions
KR101805239B1 (ko) * 2010-10-18 2017-12-05 미쯔비시 케미컬 주식회사 리소그라피용 공중합체 및 그 제조 방법, 레지스트 조성물, 패턴이 형성된 기판의 제조 방법, 공중합체의 평가 방법, 공중합체 조성 해석 방법
JP5743858B2 (ja) * 2011-11-14 2015-07-01 丸善石油化学株式会社 低分子量レジスト用共重合体の製造方法
US9796815B2 (en) * 2013-07-31 2017-10-24 Dow Global Technologies Llc Process for preparing polycarbamate and reaction product thereof
US9006379B2 (en) * 2013-07-31 2015-04-14 Dow Global Technologies Llc Process to produce polycarbamate using a gradient feed of urea
CN108264605A (zh) * 2016-12-30 2018-07-10 罗门哈斯电子材料韩国有限公司 单体、聚合物和光致抗蚀剂组合物
JP7734309B2 (ja) * 2019-07-29 2025-09-05 サイエンスコ スペシャルティ ポリマーズ イタリー エス．ピー．エー． 二次電池

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4384037A (en) * 1980-03-01 1983-05-17 Japan Synthetic Rubber Co., Ltd. Positive type photosensitive resin composition
WO1999050322A1 (en) * 1998-03-27 1999-10-07 Mitsubishi Rayon Co., Ltd. Copolymer, process for producing the same, and resist composition

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100258494B1 (ko) * 1992-06-02 2000-06-15 미우라 아끼라 레지스트 표면 반사 방지막 형성 조성물 및 패턴 형성방법
DE69611664T2 (de) * 1995-12-11 2001-08-02 Mitsui Chemicals, Inc. Wärmebeständige Polymerzusammensetzungen mit hohem Nitril-Gehalt und Verfahren zu deren Herstellung
JPH1060214A (ja) * 1996-08-22 1998-03-03 Nippon Oil Co Ltd カラーフィルター用アクリル樹脂組成物
DE60033338T2 (de) * 1999-06-07 2007-11-29 Canon Kabushiki Kaisha Toner und Bildaufzeichnungsverfahren
TWI227377B (en) * 1999-10-06 2005-02-01 Fuji Photo Film Co Ltd Positive-type resist composition
US6841331B2 (en) 2001-02-27 2005-01-11 Shipley Company, L.L.C. Polymers, processes for polymer synthesis and photoresist compositions

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4384037A (en) * 1980-03-01 1983-05-17 Japan Synthetic Rubber Co., Ltd. Positive type photosensitive resin composition
WO1999050322A1 (en) * 1998-03-27 1999-10-07 Mitsubishi Rayon Co., Ltd. Copolymer, process for producing the same, and resist composition

Also Published As

Publication number Publication date
KR20040030516A (ko) 2004-04-09
KR20090074222A (ko) 2009-07-06
US20040259025A1 (en) 2004-12-23
KR20100025596A (ko) 2010-03-09
KR100970661B1 (ko) 2010-07-15
US20030027075A1 (en) 2003-02-06
US6841331B2 (en) 2005-01-11
WO2002069040A1 (en) 2002-09-06
JP2004524564A (ja) 2004-08-12
US7208261B2 (en) 2007-04-24

Similar Documents

Publication Publication Date Title
KR100976988B1 (ko) 신규 폴리머, 폴리머 합성 방법 및 포토레지스트 조성물
US6306554B1 (en) Polymers containing oxygen and sulfur alicyclic units and photoresist compositions comprising same
KR20010040033A (ko) 페놀릭/알리시클릭 코폴리머 및 포토레지스트
JP2001272783A (ja) フォトレジスト組成物
US6777157B1 (en) Copolymers and photoresist compositions comprising same
KR20080080053A (ko) 신규 폴리머 및 포토레지스트 조성물
KR20180124007A (ko) 신규 수지 및 이를 포함하는 포토레지스트 조성물
JP2013028820A (ja) シアノアダマンチル化合物およびポリマー
US6849376B2 (en) Polymers and photoresist compositions comprising same
KR20040030511A (ko) 신규 코폴리머 및 포토레지스트 조성물
KR20050071348A (ko) 폴리머 및 이를 함유하는 포토레지스트 조성물
JP2005258438A (ja) シアノアダマンチル化合物およびポリマーおよびこれを含有するフォトレジスト
WO2005086901A2 (en) Cynoadamantyl compound and polymers and photoresists compresing same

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

A201 Request for examination
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T12-X000 Administrative time limit extension not granted

St.27 status event code: U-3-3-T10-T12-oth-X000

E90F Notification of reason for final refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

A107 Divisional application of patent
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0104 Divisional application for international application

St.27 status event code: A-0-1-A10-A18-div-PA0104

St.27 status event code: A-0-1-A10-A16-div-PA0104

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

A107 Divisional application of patent
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0104 Divisional application for international application

St.27 status event code: A-0-1-A10-A17-div-PA0104

St.27 status event code: A-0-1-A10-A16-div-PA0104

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20130814

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20130814

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301