KR100971945B1 - A X-ray detector and a method for fabricating thereof - Google Patents

Abstract

The present invention relates to an x-ray image sensing device, and more particularly, to a structure and a method of manufacturing the x-ray image sensing device for providing a stable image by increasing the auxiliary capacitance.

The X-ray image sensing device according to the present invention further configures an electrode in contact with the first electrode (pixel electrode) of the first auxiliary capacitor unit under the common wiring to form the auxiliary capacitor along with the common wiring.

Such a configuration has an advantage of obtaining a stable state image because the capacity of the X-ray image sensing device can be increased.

Description

X-ray detector and a method for manufacturing the same             

1 is a cross-sectional view showing the operation of the X-ray image sensing device,

2 is an enlarged plan view showing one pixel area of a conventional X-ray image sensing device,

3A to 3H are cross-sectional views illustrating a manufacturing process of the X-ray image sensing device according to a conventional process sequence.

4 is an enlarged plan view illustrating one pixel area of an X-ray image sensing device according to the present invention;

5A to 5H are cross-sectional views illustrating a process of manufacturing the X-ray image sensing device according to the process sequence of the present invention.

<Explanation of symbols for main parts of drawing>

100: substrate 102: gate wiring

104: gate electrode 105: first capacitor electrode

108: first semiconductor layer 110: second semiconductor layer                 

112: data wiring 116: source electrode

118: drain electrode 120: common wiring

132: auxiliary electrode 134: second capacitor electrode

140: pixel electrode

The present invention relates to an X-ray image sensing device using a TFT array process and a method of manufacturing the same.

Diagnostic X-ray (X-ray) test method, which is widely used for medical purposes today, is photographed using an X-ray detection film, and a predetermined film print time has to be passed in order to know the result.

However, in recent years, with the development of semiconductor technology, digital X-ray detectors (hereinafter referred to as X-ray image sensing devices) using thin film transistors have been researched and developed. The X-ray image sensing device has an advantage of using a thin film transistor as a switching device, and diagnosing a result by displaying an X-ray image on a screen in real time immediately after imaging of the X-ray.

Hereinafter, the configuration and operation of the X-ray image sensing device will be described.

FIG. 1 is a schematic diagram illustrating the configuration and operation of the X-ray image sensing device 9, wherein a substrate 1 is formed under the thin film transistor 3, the storage capacitor 10, the pixel electrode 12, and the luminous intensity. And the front film 2, the protective film 20, the high voltage electrode 24, the high voltage DC power supply 26, and the like.

The photoconductive film 2 forms an electrical signal, that is, electron and hole pair 6, internally in proportion to the signal intensity of an external electric wave or magnetic wave incident thereto. The photoconductive film 2 serves as a converter for converting an external signal, in particular, an X-ray into an electrical signal. The electron-hole pair 6 formed by the X-ray light is provided under the photoconductive film 2 by the voltage Ev applied from the high voltage DC power supply 26 to the high voltage electrode 24 positioned on the photoconductive film 2. Collected in the form of charge on the pixel electrode 12 is located, and is stored in the storage capacitor 10 formed with the capacitor electrode grounded from the outside. At this time, the charge stored in the storage capacitor 10 is turned on by the gate signal applied to the gate of the thin film transistor 3 and turned on through the data line connected to the source of the thin film transistor 3. It is sent to an image processing circuit to produce an x-ray image.

In order to detect and convert even weak X-ray light into charge in the X-ray image sensing device, the number of trap state densities trapping charge in the photoconductive film 2 is reduced, and the thin film transistor 3 is turned off. The leakage current when there is to be reduced.

2 is a plan view illustrating one pixel area of a conventional X-ray image sensing device.

As shown in the drawing, the gate wiring 32 is formed in the row direction and the data wiring 42 is formed in the column direction so as to cross the gate wiring 32.

An area defined by the intersection of the two wires 32 and 42 is called a pixel area, and in the pixel area, a ground wire spaced apart from the data wire 42 in parallel (hereinafter, referred to as a "common wire") 50 To form.

The thin film transistor T including the gate electrode 34, the active layer 38, the source electrode 46, and the drain electrode 48 is positioned at the intersection of the two wires 32 and 42.

A capacitor electrode 66 and a pixel electrode 72 are formed in the pixel region, and the capacitor electrode 66 is connected to the common wiring 50 through a common wiring contact hole (which is formed twice through an etching process) 62. ) And the pixel electrode 72 is in contact with the drain electrode 48. In this case, the pixel electrode 72 is configured to contact the drain electrode 48 indirectly through the drain auxiliary electrode 64 directly contacting the drain electrode 48.

The capacitor electrode 66 and the pixel electrode 72 are formed with an inorganic insulating film (not shown) thinly deposited therebetween to constitute the storage capacitor C. Referring to FIG.

Although not shown, the pixel electrode 72 serves as a current collecting electrode that collects charges so that holes generated in the photoconductive film (2 of FIG. 1) can accumulate in the storage capacitor C.

The function of the above-described X-ray image sensing device is summarized as follows.

Holes generated from the photoconductive film (not shown) are collected by the pixel electrode 72 and stored in the storage capacitor C configured together with the capacitor electrode 66.                         

Also, holes stored in the storage capacitor C move to the source electrode 46 through the drain electrode 48 and the pixel electrode 72 by the operation of the thin film transistor T, and pass through the data line 42. The circuit is processed by an external circuit (not shown) to represent an image.

Here, the electric charges that do not completely escape to the outside through the external circuit, that is, the remaining electric charge remaining in the storage capacitor C, are completely removed by the external circuit before detecting the new X-ray phase.

Hereinafter, the manufacturing process of FIG. 2 described above with reference to the drawings.

3A to 3H are cross-sectional views taken along a cutting line III-III ′ of FIG. 2 and shown in a process sequence.

First, as shown in FIG. 3A, low-resistance aluminum (Al), aluminum alloy (mainly AlNd), and the like are deposited and patterned to form a gate wiring (32 in FIG. 2) and a gate electrode 34 extending from the gate wiring. ).

Next, an inorganic insulating material group including silicon nitride (SiN _X ) and silicon oxide (SiO ₂ ) on the entire surface of the substrate 30 on which the gate gate wiring 32 (FIG. 2) and the gate electrode 34 are formed. In some embodiments, the gate insulating layer 36 is formed by depositing or applying one selected from the group of organic insulating materials including benzocyclobutene (BCB), acryl resin, and the like.

As shown in FIG. 3B, the amorphous silicon (A-Si: H) and the impurity amorphous silicon (n + a-Si) and the impurity amorphous silicon (n + a-Si) are continuously formed on the gate insulating film 36 while the insulating film is not exposed to the outside air. : H) is laminated in order and patterned to form active layer 38 and ohmic contact layer 40.

As shown in FIG. 3C, molybdenum (Mo) is deposited on the entire surface of the substrate 30 on which the active layer 38 and the ohmic contact layer 40 are formed, and then patterned to form the gate wiring (32 in FIG. 2). A data line 42 crossing each other to define a pixel region, a source electrode 46 connected to the gate electrode 34 extending above one side of the gate electrode 34, a drain electrode 48 spaced apart from the predetermined distance, and the pixel The common wiring 50 is formed at the center of the region and spaced apart from the data wiring 42 in parallel.

Subsequently, some of the ohmic contact layers 40 exposed between the source and drain electrodes 46 and 48 are etched to expose a portion of the active layer 38.

As shown in FIG. 3D, a silicon insulating film (SiN _x ) or oxide is formed on the entire surface of the substrate 30 on which the data lines 42, the source and drain electrodes 46 and 48, and the common wiring 50 are formed. Silicon (SiO ₂ )) is deposited by a predetermined method to form the first passivation film 52.

Subsequently, the first passivation layer 52 is patterned to form a first drain contact hole 54 exposing a part of the drain electrode 48 and a first common line exposing most of the common wiring 50. The contact hole 56 is formed.

Next, as illustrated in FIG. 3E, a transparent organic insulating layer is deposited on the first passivation layer 52 to form and pattern a second passivation layer 58. A second drain contact hole 60 is formed, and a second common wiring contact hole 62 is formed corresponding to the first common wiring contact hole.

As described above, the reason for forming the first protective film 52 which is the inorganic insulating film under the second protective film 58 which is the organic insulating film is as follows.

That is, when the first passivation layer 52, which is a layer in direct contact with the exposed active layer 40, is formed of a silicon insulating layer, the interface property between the exposed active layer 38 and the first passivation layer 52 is excellent. The area trapping electrons becomes smaller, and therefore, the result is that the mobility of electrons becomes faster.

Therefore, an increase in leakage current due to the direct contact between the second protective film 58 made of the organic insulating film and the channel can be prevented.

As shown in FIG. 3F, a transparent conductive material such as indium tin oxide (ITO) is deposited and patterned on the entire surface of the substrate 30 on which the second passivation layer 58 is formed. The drain auxiliary electrode 64 in contact with each other and the capacitor electrode 66 in contact with the exposed common wiring 50 are formed.

The common wiring 50 is formed to pass a part of the pixel (FIG. 2), but the capacitor electrode 66 is wider than the common wiring 50 so as not to overlap with the data wiring 42. It overlaps with at least half of the area of the pixel electrode formed at.

Next, as shown in FIG. 3G, one of the above-described inorganic insulating material groups is deposited on the entire surface of the substrate 30 including the drain auxiliary electrode 64 and the capacitor electrode 66 to form a third passivation layer 68. ).

The third passivation layer 68 is patterned to form a third drain contact hole 70 exposing the drain auxiliary electrode 64.

As described above, the third drain contact hole 70 is formed to have a smaller area than the drain auxiliary electrode 64 already formed. Since the drain auxiliary electrode 64 is formed on the drain electrode 48, damage to the drain electrode 48 can be prevented when the third drain contact hole 70 is formed.

As shown in FIG. 3H, a transparent conductive layer including indium tin oxide (ITO) and indium zinc oxide (IZO) on the entire surface of the third passivation layer 68 having the third drain contact hole 70 formed therein. A metal is deposited and patterned to form a pixel electrode 72 on the source and drain electrodes 46 and 48 and on the pixel region P while contacting the exposed drain auxiliary electrode 64.

The pixel electrode 72 is formed to overlap the capacitor electrode 66 with the third passivation layer 68 interposed therebetween.

The passivation layer inserted between the pixel electrode 72 and the capacitor electrode 66 electrode forms a storage capacitor (C).

 The storage capacitor electrode 66 is a first electrode, and the pixel electrode 72 also functions as a second electrode.

Although the following process is not shown, the photosensitive material is applied, and the photosensitive material is used as a transducer for receiving an external signal and converting it into an electrical signal. The compound of amorphous selenium is transferred using a vacuum evaporator. Deposit 100-500 μm thick. In addition, an X-ray photosensitive material having a low dark conductivity and sensitive to an external signal, particularly X-ray photoconductivity, may be used, such as HgI ₂ , PbO, CdTe, CdSe, thallium bromide, cadmium sulfide, and the like. When the photosensitive material is exposed to X-ray light, electrons and hole pairs are generated in the photosensitive material according to the light intensity.

After application of the X-ray photosensitive material, the metal layer is formed thin enough to transmit transparent conductive electrodes or X-ray light as high voltage electrodes.

When the X-ray light is received while applying a voltage to the conductive electrode, electrons and hole pairs formed in the photosensitive material are separated from each other, and holes separated by the conductive electrode are collected in the pixel electrode 72 and stored in the storage capacitor C.

The X-ray image sensing device may be formed by the process as described above.

In the above-described configuration, since the X-ray image sensing device accumulates a hole-shaped signal in the storage capacitor, and the accumulated signal is exported to the outside through the thin film transistor to display an image, the area of the storage capacitor is as low as possible. It is good to secure a lot.

The present invention has been proposed in order to further secure the capacities of the X-ray image sensing device, and further includes a second storage electrode in contact with the pixel electrode under the common wiring, thereby forming the common wiring and the second storage electrode. Configure storage capacitors in between.

Such a configuration has an advantage of providing a stable image because the capacity of the storage capacitor can be further secured.

An x-ray image sensing device according to a feature of the present invention for achieving the above object, the substrate; Gate wirings and data wirings intersecting each other vertically with a gate insulating film interposed therebetween to define pixel regions; A thin film transistor positioned at the intersection of the two wires, the thin film transistor comprising a gate electrode, a first semiconductor layer, a source electrode, and a drain electrode; A common wiring spaced apart from the data wiring in parallel with the data line and extending in one direction; A first capacitor electrode below the common wiring, having a second semiconductor layer and the gate insulating layer interposed therebetween, at least one end of which overlaps the common wiring in a wiring form; A transparent second capacitor electrode disposed on the pixel area and in contact with the common wiring and overlapping the first capacitor electrode; And a transparent pixel electrode disposed on the second capacitor electrode with the first passivation layer interposed therebetween and in contact with the drain electrode and the first capacitor electrode, wherein the first storage capacitor electrode, the gate insulating layer, and the common wiring are formed on the first capacitor layer. The pixel electrode, the first passivation layer, and the second capacitor electrode form a second capacitor, and the first and second capacitors overlap each other.

An inorganic insulating layer and an organic insulating layer are stacked between the thin film transistor and the first passivation layer. The contact hole exposes the side surface through the drain electrode and exposes the first capacitor electrode under the drain electrode. It further comprises a second protective film having, wherein the non-insulating film is silicon nitride (SiN _x ) or silicon oxide (SiO ₂ ), the organic insulating film is used benzocyclobutene (BCB) and acrylic resin (resin) do.

The drain auxiliary electrode is further configured to contact the drain electrode and the first capacitor electrode through the contact hole on the second passivation layer, and to also contact the pixel electrode.

Since the common wiring and the source and drain electrodes are made of molybdenum (Mo), when the first drain contact hole is formed, a lower gate insulating layer is etched through the drain electrode to expose the first capacitor electrode. will be.

The second capacitor electrode and the pixel electrode are transparent conductive metals including indium tin oxide (ITO) and indium zinc oxide (IZO).

The first half body layer and the second semiconductor layer are formed by stacking a pure amorphous silicon layer and an impurity amorphous silicon layer. In this case, the first semiconductor layer extends below the data line, so that the contact characteristic of the data line is improved.

According to an aspect of the present invention, there is provided a method of manufacturing an X-ray image sensing device, comprising: a gate wiring extending along one side of the pixel region on a substrate on which a switching region, a pixel region, and a common wiring region are defined, and a switching region in the gate wiring; Forming a gate electrode extending to the first capacitor electrode in the common wiring region; Forming a gate insulating film on an entire surface of the substrate over the gate electrode, the gate wiring, and the first capacitor electrode; Forming a first semiconductor layer on the gate insulating film on the gate electrode and a second semiconductor layer on the common wiring region; A source electrode spaced apart from the source electrode on the first semiconductor layer and overlapping the first capacitor electrode and one end thereof; a pixel region connected to the source electrode on the gate insulating layer and perpendicularly crossing the gate line; Forming a data line and a common line spaced apart from the data line in parallel with the data line; Forming a first protective film, which is an inorganic insulating film, on the entire surface of the substrate over the source and drain electrodes, the data lines, and the common wiring, and patterning the first drain contact hole to expose the drain electrode and the first capacitor electrode; Forming a first common wiring contact hole to expose; Forming and patterning a second passivation layer, which is an organic insulating layer, on the first passivation layer to expose the drain electrode and the first capacitor electrode, and a second common wiring contact hole exposing the common wiring; Forming; Forming a transparent second capacitor electrode in contact with the common wiring exposed over the second passivation layer and overlapping the first capacitor electrode; Forming and patterning a third passivation layer over the second capacitor electrode on the entire surface of the substrate to form a third drain contact hole exposing the drain electrode and the first capacitor electrode; And forming a pixel electrode positioned in the pixel region while contacting the drain electrode and the first capacitor electrode exposed over the third passivation layer.

Hereinafter, the configuration and operation according to the embodiment of the present invention will be described with reference to the accompanying drawings.

Example

The present invention is characterized by further configuring a separate electrode in contact with the pixel electrode under the common wiring, which is a first electrode, and further comprises a storage capacitor having the common wiring as a second electrode.

4 is a plan view illustrating one pixel area of the X-ray image sensing device according to the present invention.

As shown in the drawing, the gate wiring 102 is formed in the row direction and the data wiring 112 is formed in the column direction so as to intersect the gate wiring 102.

An area defined by the intersection of the two wires 102 and 112 is called a pixel area, and a ground wire 120 (hereinafter referred to as a "common wire") 120 is formed in the pixel area to be spaced apart in parallel with the data wire 112. do.

The thin film transistor T including the gate electrode 104, the first semiconductor layer 108, the source electrode 116, and the drain electrode 118 is positioned at the intersection of the two wires 102 and 112.

A second semiconductor layer 110 formed of the same material as the first semiconductor layer 108 is further formed below the common wiring 120, which serves as an etch stopper when forming the common wiring contact hole. Done.

In addition, the first semiconductor layer 108 extends below the data line 112 to improve contact characteristics of the data line 112.

A second capacitor electrode 134 and a pixel electrode 140 are formed in the pixel region, and the second capacitor electrode 134 contacts the common wiring 120 through the common wiring contact hole 130 and the pixel. The electrode 140 is configured to contact the drain electrode 118 indirectly through the drain auxiliary electrode 132.

In this case, the first capacitor electrode 105 further contacting the pixel electrode 140 while overlapping the common wiring planarly with a gate insulating layer interposed therebetween.

Therefore, the X-ray image sensing device according to the present invention includes first and second storage capacitors C ₁ and C ₂ , and the first electrode of the first storage capacitor C ₁ is the first storage electrode ( 105, the second electrode is the common wiring 120, the first electrode of the second storage capacitor C ₂ is the second capacitor electrode 134, and the second electrode is the pixel electrode 140.

Although not shown, the pixel electrode 140 serves as a current collecting electrode that collects charges so that holes generated in the photoconductive film (2 of FIG. 1) can accumulate in the storage capacitors C ₁ and C ₂ .

Hereinafter, a manufacturing process of an X-ray image sensing device according to the present invention will be described with reference to the drawings.

5A through 5H are cross-sectional views taken along the cutting line VV ′ of FIG. 3, and according to the process sequence of the present invention.

First, referring to FIG. 5A, as illustrated, a data region D, a switching region T, a pixel region P, and a common wiring region G are defined on a substrate 100.

 Low-resistance aluminum (Al), aluminum alloy (mainly AlNd), and the like are deposited and patterned to form a gate electrode 104 extending from the gate wiring (102 in FIG. 4) and the switch region T in the gate wiring. Form. At the same time, the first capacitor electrode 105 extending to the pixel region P in a portion close to the gate electrode 104 is formed.

In this case, the gate electrode 104 may be formed as a double layer including an aluminum (Al) layer. The reason for this is as the material of the gate electrode 104, which has a low resistance to reduce the RC delay. Although this is mainstream, pure aluminum is chemically weak in corrosion resistance and causes a wiring defect problem due to hillock formation in a subsequent high temperature process, and thus a laminated structure may be applied as described above.

Next, an inorganic insulating material group including silicon nitride (SiN _X ) and silicon oxide (SiO ₂ ) on the entire surface of the substrate 100 on which the gate wiring (102 of FIG. 4) and the gate electrode 104 are formed. In some embodiments, the gate insulating layer 106 may be formed by depositing or applying one selected from the group of organic insulating materials including benzocyclobutene (BCB), acryl resin, and the like.

As shown in FIG. 5B, the amorphous silicon (A-Si: H) and the impurity amorphous silicon (n + a-Si) are continuously formed on the gate insulating film 106 while the insulating film is not exposed to the outside air. : H is stacked in order and patterned to form a first semiconductor layer 108 in the switching region T and a data region D, and a second semiconductor layer 110 in the common wiring region.

In this case, the first and second semiconductor layers 108 and 110 are formed by stacking amorphous silicon layers 108a and 110a and ohmic contact layers 108b and 110b, respectively. In particular, the amorphous regions formed to correspond to the switching region T are formed. The silicon layer 108a is called an active layer, and the amorphous silicon layer 108b containing impurities is called an ohmic contact layer.

As shown in FIG. 5C, molybdenum (Mo) is deposited and patterned on the entire surface of the substrate 100 on which the first and second semiconductor layers 108 and 110 are formed, and intersect with the gate wiring 102 (FIG. 4). A data line 112 defining a pixel region, a source electrode 116 connected to the source electrode 116 extending to an upper side of the gate electrode 104, a drain electrode 118 spaced apart from the predetermined region, and a pixel region of the pixel region. The common wiring 120 is positioned in the center and spaced apart from the data wiring 112 in parallel.

Subsequently, some of the ohmic contact layers 108b exposed between the source and drain electrodes 116 and 118 are etched to expose a portion of the active layer 108.

As shown in FIG. 5D, a silicon insulating film (SiN _x or silicon oxide) is formed on the entire surface of the substrate 100 on which the data lines 112, the source and drain electrodes 116 and 118, and the common wiring 120 are formed. SiO ₂ )) is deposited by a predetermined method to form the first passivation layer 121.

Subsequently, the first passivation layer 121 is patterned by dry etching, so that the first drain contact hole 122 exposing a part of the drain electrode 118 and a part of the common wiring 129 have a large area. The common wiring contact hole 124 is formed on an upper portion of the portion.

The first drain contact hole 122 is formed by etching a drain electrode 118 corresponding to the drain electrode 118 and a gate insulating layer 106 below the first drain contact hole 122. The first capacitor electrode 105 on the side and bottom of the drain electrode 118 is etched. ) At the same time.

The common wiring contact hole 124 exposes a lower side of the common wiring 120. In this case, during the process of forming the common wiring contact hole 124, the second semiconductor layer 110 formed below the common wiring 120 serves as an etch stopper so that the second semiconductor layer 110 is not etched any more. do.

Next, as illustrated in FIG. 5E, a transparent organic insulating film is deposited on the first passivation layer 121 to form and pattern a second passivation layer 126 to form a second pattern corresponding to the first drain contact hole. A drain contact hole 128 is formed, and a second common wiring contact hole 130 is formed corresponding to the first common wiring contact hole.

As described above, the reason for forming the first passivation layer 121 as the inorganic insulation layer under the second passivation layer 126 as the organic insulation layer is as follows.

This is as described above. That is, when the first passivation layer 121, which is a layer in direct contact with the exposed active layer 108b, is formed of a silicon insulating layer, the interface property between the exposed active layer 108b and the first passivation layer 121 is excellent. The area trapping electrons becomes smaller, and therefore, the result is that the mobility of electrons becomes faster.

Therefore, an increase in leakage current due to direct contact between the second protective film 126 made of the organic insulating film and the channel can be prevented.

As shown in FIG. 5F, a transparent conductive material such as indium tin oxide (ITO) is deposited and patterned on the entire surface of the substrate 100 on which the second passivation layer 126 is formed, thereby exposing the exposed drain electrode 118 and A drain auxiliary electrode 132 in contact with the first capacitor electrode 105 and a capacitor electrode 134 in contact with the exposed common wiring 120 are formed.

The common wiring 120 is formed to pass a part of the pixel (FIG. 4), but the capacitor electrode 134 is wider than the common wiring 120 so as not to overlap with the data wiring 112, and then the process. It overlaps with at least half of the area of the pixel electrode formed at.

Next, as shown in FIG. 5G, one of the above-described organic insulating material groups is deposited on the entire surface of the substrate 100 including the drain auxiliary electrode 132 and the capacitor electrode 134 to form a third passivation layer 136. ).

The third passivation layer 136 is patterned to form a third drain contact hole 138 exposing the drain auxiliary electrode 132.

The third drain contact hole 138 is formed to have a smaller area than the drain auxiliary electrode 132 already formed. Since the drain auxiliary electrode 132 is formed on the drain electrode 118, damage to the drain electrode 118 can be prevented when the third drain contact hole 138 is formed, and stable contact characteristics can be obtained.

As shown in FIG. 5H, a transparent conductive metal is deposited and patterned on the entire surface of the third passivation layer 136 to contact the exposed drain auxiliary electrode 132 and the upper portions of the source and drain electrodes 116 and 118. The pixel electrode 140 is formed on the pixel region P.

The pixel electrode 140 is formed to overlap the second capacitor electrode 134 in a planar manner with the third passivation layer 136 interposed therebetween.

In the above-described process, the first storage capacitor C ₁ having the first capacitor electrode 105 in contact with the pixel electrode 140 as the first electrode and the common wiring 120 thereon as the second electrode is And a second storage capacitor C ₂ having a second capacitor electrode 105 in contact with the common wiring 120 as a first electrode and a pixel electrode 140 thereon as a second electrode. Can be formed.

Although the following process is not shown, the photosensitive material is applied, and the photosensitive material is used as a transducer which receives an external signal and converts the signal into an electrical signal. The compound of amorphous selenium is converted to 100 by using an evaporator. Deposit at -500 μm thickness. In addition, an X-ray photosensitive material having a low dark conductivity and sensitive to an external signal, particularly X-ray photoconductivity, may be used, such as HgI ₂ , PbO, CdTe, CdSe, thallium bromide, cadmium sulfide, and the like. When the photosensitive material is exposed to X-ray light, electrons and hole pairs are generated in the photosensitive material according to the light intensity.

The X-ray image sensing device according to the embodiment of the present invention can be manufactured by the above process.

As described above, the X-ray image sensing device formed by the manufacturing method according to the present invention forms a second storage capacitor electrode in contact with the pixel electrode under the common wiring so that two auxiliary capacitors are formed in one pixel. Since it can be the effect that can implement a stable image compared to the conventional.

Claims (14)

A substrate; Gate wirings and data wirings intersecting each other vertically with a gate insulating film interposed therebetween to define pixel regions; A thin film transistor positioned at the intersection of the two wires, the thin film transistor comprising a gate electrode, a first semiconductor layer, a source electrode, and a drain electrode; A common wiring spaced apart from the data wiring in parallel with the data line and extending in one direction; A first capacitor electrode below the common wiring, having a second semiconductor layer and the gate insulating layer interposed therebetween, at least one end of which overlaps the common wiring in a wiring form; A transparent second capacitor electrode disposed on the pixel area and in contact with the common wiring and overlapping the first capacitor electrode; A transparent pixel electrode disposed on the second capacitor electrode with a first passivation layer interposed therebetween and in contact with the drain electrode and the first capacitor electrode; Wherein the first storage capacitor electrode, the gate insulating layer, and the common wiring form a first capacitor, the pixel electrode, the first passivation layer, and the second capacitor electrode form a second capacitor, and the first and second capacitors. The X-ray image sensing device, characterized in that formed overlapping. The method of claim 1, An inorganic insulating layer and an organic insulating layer are stacked between the thin film transistor and the first passivation layer. The contact hole exposes the side surface through the drain electrode and exposes the first capacitor electrode under the drain electrode. The x-ray image sensing device further comprises a second protective film having. The method of claim 2, And the inorganic insulating layer is silicon nitride (SiN _x ) or silicon oxide (SiO ₂ ), and the organic insulating layer is benzocyclobutene (BCB) and an acrylic resin. The method of claim 2, And a drain auxiliary electrode in contact with the drain electrode and the first capacitor electrode through the contact hole on the second passivation layer and in contact with the pixel electrode. The method of claim 1, The common wiring and the source and drain electrodes are molybdenum (Mo) X-ray image sensing device. The method of claim 1, And the second capacitor electrode and the pixel electrode are transparent conductive metals including indium tin oxide (ITO) and indium zinc oxide (IZO). The method of claim 1, The first half layer and the second semiconductor layer is an X-ray image sensing device configured by stacking a pure amorphous silicon layer and an impurity amorphous silicon layer. The method of claim 1, The first semiconductor layer is an X-ray image sensing device extending below the data line. A gate wiring extending along one side of the pixel region on a substrate on which a switching region, a pixel region and a common wiring region are defined, a gate electrode extending from the gate wiring to a switching region, and a first wiring in the common wiring region; Forming a capacitor electrode; Forming a gate insulating film on an entire surface of the substrate over the gate electrode, the gate wiring, and the first capacitor electrode; Forming a first semiconductor layer on the gate insulating film on the gate electrode and a second semiconductor layer on the common wiring region; A source electrode spaced apart from the source electrode on the first semiconductor layer and overlapping the first capacitor electrode and one end thereof; a pixel region connected to the source electrode on the gate insulating layer and perpendicularly crossing the gate line; Forming a data line and a common line spaced apart from the data line in parallel with the data line; Forming a first protective film, which is an inorganic insulating film, on the entire surface of the substrate over the source and drain electrodes, the data lines, and the common wiring, and patterning the first drain contact hole to expose the drain electrode and the first capacitor electrode; Forming a first common wiring contact hole to expose; Forming and patterning a second passivation layer, which is an organic insulating layer, on the first passivation layer to expose the drain electrode and the first capacitor electrode, and a second common wiring contact hole exposing the common wiring; Forming; Forming a transparent second capacitor electrode in contact with the common wiring exposed over the second passivation layer and overlapping the first capacitor electrode; Forming and patterning a third passivation layer over the second capacitor electrode on the entire surface of the substrate to form a third drain contact hole exposing the drain electrode and the first capacitor electrode; Forming a pixel electrode positioned in the pixel region while contacting the drain electrode and the first capacitor electrode exposed on the third passivation layer; X-ray image sensing device manufacturing method comprising a. The method of claim 9, The first passivation layer is formed of silicon nitride (SiN _x ) or silicon oxide (SiO ₂ ), and the second passivation layer is made of benzocyclobutene (BCB) or an acrylic resin. Way. The method of claim 9, And forming a drain auxiliary electrode in contact with the drain electrode, the gate electrode, and the pixel electrode at the same time on the second passivation layer. The method of claim 9, The common wiring and the source and drain electrodes are formed of molybdenum (Mo) X-ray image sensing device manufacturing method. The method of claim 9, And the second capacitor electrode and the pixel electrode are made of a transparent conductive metal including indium tin oxide (ITO) and indium zinc oxide (IZO). The method of claim 9, The first half layer and the second semiconductor layer is a method of manufacturing an X-ray image sensing device formed by stacking a pure amorphous silicon layer (a-Si: H) and an impurity amorphous silicon (n + a-Si: H) layer.

Images