KR100964568B1 - Advanced Probe cards of method of manufacturing the aligment plate - Google Patents

Abstract

The present invention is an assembly of a probe block used as a semiconductor device inspection device assembling the alignment plate in various configurations to accurately fix the probe pin, and the alignment plate of the probe head assembly for wafer inspection using a combination of the probe block and the multilayer circuit board It relates to a manufacturing method.

The alignment plate of the present invention includes an upper alignment plate, an intermediate contact alignment plate, a lower alignment plate, and a cross alignment plate, and are assembled by determining a matching groove position of the probe pin according to the direction of the protrusion alignment protrusion of each alignment plate.

The manufacturing method of the upper alignment plate, the intermediate contact alignment plate and the lower alignment plate may include a step of depositing an oxide film on an upper surface of the selected alignment plate; B) applying a primary photoresist on the deposited oxide film; Exposing and developing with a primary mask having an opening groove shape formed on the applied primary photoresist; D) through-opening the opening groove shape formed by exposure and development by dry etching; Removing the oxide film and the primary photoresist remaining on the top surface of the alignment plate; Depositing an oxide film on a lower surface of the alignment plate; G step of applying a second photoresist on the bottom surface of the alignment plate on which the oxide film is deposited; Exposing and developing with a secondary mask having protrusions formed on the applied secondary photoresist; I-wetting the projection shape formed by exposure and development; Removing the oxide film and the secondary photoresist remaining on the bottom surface of the alignment plate; K for depositing an insulating film on the entire alignment plate; Depositing a polymer on a surface without protrusions; It is made of.

Combination heat sink, middle contact heat sink, cross heat sink

Description

Advanced Probe cards of method of manufacturing the aligment plate}

The present invention relates to a method for manufacturing an alignment plate that facilitates assembly and replacement of probe pins on a probe head of a probe card used as a semiconductor chip inspection apparatus, and provides various methods for manufacturing an alignment plate required by a probe head. The semiconductor chip is classified into a normal chip and a bad chip through an electrical die sorting (EDS) process, and only the normal chip is packaged. In the EDS process, a needle of a probe card is contacted with an electrode pad of a semiconductor chip to apply an electrical signal to detect a response electrical signal corresponding to the electrical signal, and to check whether there is a normal or abnormality.

In addition, as the probe head increases in size, a probe card is manufactured in various combinations of probe blocks.

As it is well known, the semiconductor chip has recently been probed with a tens of thousands of pins that can be inspected as the number of electrode pads increases as the circuit processing line width is narrowed (fine pitch) by nano-technology processing and is highly integrated. In addition, the size of the electrode pad is gradually being reduced to less than 60um in length and 60um in length.

Accordingly, the position alignment and Z-axis flatness of the X-axis and Y-axis of the probe pins assembled to the probe head should be assembled to maintain more precisely. The probe head of a conventional semiconductor chip inspection probe card has a structure in which a probe pin is assembled to a high multilayer ceramic substrate to be in contact with an electrode pad of a semiconductor chip to be inspected. Probe pins assembled to the high-layer ceramic substrate are referred to as probe heads. 19um surface planar deformation occurs diagonally in the 6-inch by 6-inch and 6-inch by 6-inch wide areas of the ceramic substrate. When the size of the plate of the high-layer ceramic substrate is greater than 8 inches wide and 8 inches long, the surface flatness problem will occur more greatly due to the shrinkage and expansion of the ceramic material, and the high-layer layer having the large area size of the plate The manufacturing process of the ceramic substrate is complicated, the manufacturing cost is expensive and the production yield is a problem that is low. Another conventional probe head has a contact hole fixed on a silicon substrate to fix a probe pin to the contact hole. The method for processing a contact hole in the silicon substrate is to pattern the exposure and development by a photolithography process in a known MEMS process, and to form the contact hole phenomenon patterned by the exposure and development by vertical etching through dry etching. The contact pins of the silicon substrate are fixed to the probe pins because the probe pins are fixed and there is no alignment means. Therefore, the probe pins have problems in fixing the probe pins according to the size of the semiconductor chip object forming the test object because the probe pins are not precisely aligned. Accordingly, there is a demand for an alignment plate having alignment protrusions for accurately fixing and aligning probe pins of a probe card for inspecting semiconductor chips or a probe head alignment plate having a conducting electrode formed in a vertically penetrated contact hole. . The alignment protrusions may be formed into alignment plates by forming alignment protrusions on the silicon substrate by an etching process.The alignment protrusions may be formed by bonding the alignment protrusions to the protrusion recesses after processing the protrusion recesses on the silicon substrate. The other alignment plate may form a fixing pad groove and a mounting support groove for fixing the conductive electrode and the probe pin to which the probe pin is energized when the conductive metal is embedded with an electroplating in the opening formed in the vertical alignment plate on the alignment plate. . In addition, an insulating film is deposited by an oxide film or a nitride film by a chemical vapor deposition process on the entire surface of the heat exchanger.

On the other hand, in order to meet the savings in inspection cost, a probe card capable of simultaneously inspecting the entire semiconductor chip on a wafer is required.

For example, a semiconductor chip capable of simultaneously inspecting the entire semiconductor chip on a single 12-inch wafer has hundreds of chips formed in the case of a memory device, and tens of thousands of probe pins of a probe card can be inspected at a time. Will be assembled. Accordingly, the probe head to which the probe pin is assembled requires a variety of alignment plate manufacturing methods according to the type of semiconductor chip to be inspected. Detailed description of the present invention and the manufacturing method will be described in detail again in Examples 1 to 7 described later.

Recent probe cards require large-diameter 12-inch wafers to be inspected at a time. Single-layer multilayer circuit boards (MLC = transformers) are larger than 8 inches in size, making it difficult to implement circuit patterns on multilayer circuit board (MLC) materials. Due to thermal flatness, shrinkage problem, and electrode pad flatness problem, it is not developed well and supply is not smooth.

In addition, the wafer size is large and the probe card is also large, making it difficult to mount on the prober equipment.The mounted probe card is mounted on the prober equipment during wafer chip inspection. When the head contacts the wafer, the probe head contacts the wafer either one of the left side and the right side.

Thus, the pads of the semiconductor chip on the wafer in the first contacting area have a large contact mark, and the pads of the semiconductor chip on the wafer in the later contacting area have a small contact mark and become squeezed, resulting in unstable inspection.

The probe card, which has not solved this problem, is expected to further generate the instability problem when the entire semiconductor chip having a pattern formed on a wafer of 12 inches or more is examined at a time.

Meanwhile, the upper alignment member is formed on the upper probe pin through the assembly of the probe inspection probe pin and the probe pin bar, which is registered by the applicant of No. 10-0799237, and the X-axis, Y-axis precision and Z-axis flatness are problematic. Although the drawing is improved, the lower probe pin contacting the pad electrode of the conductive electrode disposed zigzag on the circuit board block or the printed circuit board is not properly contacted, resulting in poor contact inspection.

An object of the present invention is to configure the lower alignment plate to reduce the problem caused by poor contact between the lower probe pin and the conductive electrode pad land of the circuit board block or the intermediate substrate member and the printed circuit board.

Another object of the present invention is to solve the problems pointed out as a problem in the prior art, and further comprises an intermediate contact alignment plate, whereby the intermediate contact pin stabilizes the circuit board block or the multilayer circuit board and the printed circuit board. It is to provide a combination of the probe pin and the alignment plate, a variety of probe head assembly configuration method and a manufacturing method of the alignment plate to enable bonding and precise assembly.

It is still another object of the present invention to manufacture a probe card capable of inspecting Conventional Perimeter and Area Array array pads, which are semiconductors such as non-memory and fusion memories, by adding cross-aligned projections in all directions by constructing a cross alignment plate.

In other words, by implementing a probe head assembled with a MEMS probe pin on a cross-shaped plate with a semiconductor pad disposed on all sides of a semiconductor chip, a probe card capable of inspecting a non-memory semiconductor with a multipara can be manufactured.

In addition, the alignment plate is processed by the MEMS process, and the alignment plate may be configured in various combinations to precisely assemble the probe pin.

In addition, a probe card is assembled by combining a probe head by constructing a structure using an integrated multilayer circuit board and a block type circuit board block according to an enlargement of a probe card.

According to the present invention, the alignment plate includes a top alignment plate, a bottom alignment plate, an intermediate contact alignment plate, and a cross alignment plate in various ways to form alignment protrusions and insertion grooves fixedly arranged at equal intervals on each alignment plate in the longitudinal direction. The slit groove is formed only a part of the depth in the alignment protrusion.

Also, the alignment protrusions of the upper and lower alignment plates may protrude upward, the alignment protrusions of the upper and lower alignment plates protrude downward, or the alignment protrusions protruding the alignment protrusions of the upper and lower alignment plates may be different from each other. Facing or aligning protrusions protruding the alignment projections of the upper and lower alignment plates to form a different probe block, it is possible to assemble the probe pin precisely.

By adding the alignment protrusions of the cruciform plates in all directions, it is possible to manufacture a probe card capable of inspecting conventional perimeter and area array array pads of semiconductors such as non-memory and fusion memory.

The cross alignment plate is formed of a structure in which the alignment plate protruding from the alignment plate and the alignment plate protruding to the lower surface of the alignment plate are bonded to each other without the alignment protrusion.

By implementing a probe head assembled with MEMS probe pins on the crosshair plate, a probe card capable of inspecting a non-memory semiconductor with a multi-chip can be manufactured.

The material of the upper alignment plate, the lower alignment plate, the intermediate contact alignment plate and the cross alignment plate is selected from quartz glass plate and silicon substrate.

In addition, the alignment protrusions may be integrally formed on the upper alignment plate, the lower alignment plate, the intermediate contact alignment plate and the cross alignment plate, or the protrusions may be separately molded and bonded to the upper alignment plate, the lower alignment plate, the intermediate contact alignment plate, and the cross alignment plate. Forming a projection or etching the projection groove in the upper alignment plate and lower alignment plate and the intermediate contact alignment plate and the cruciform alignment plate and to form the alignment projections by joining the alignment projections to the projection groove.

The exposed front surface of the upper alignment plate, the lower alignment plate, the intermediate contact alignment plate, and the cross alignment plate is to deposit an insulating thin film with an oxide film or a nitride film.

The insulating thin film is deposited by a desired thickness by chemical vapor deposition (CVD).

The probe pin insertion grooves and the alignment protrusions opened in the upper alignment plate, the lower alignment plate, the intermediate contact alignment plate, and the cross alignment plate are manufactured by a photolithography process and an etching process. The insertion grooves opened in the upper and lower alignment plates, the intermediate contact alignment plate, and the cross alignment plate are driven by dry etching using a reactive etching gas, and the alignment protrusions are isotropically wet or reactive etching gases. It is to proceed with dry etching using.

The probe pins are bonded to the insertion slots of the upper alignment plate, the lower alignment plate, the intermediate contact alignment plate, and the cross alignment plate, and the junction of the probe pins is inserted into the insertion grooves, which are connected to the electrode pad of the circuit board block. It is a method of joining the junction of the probe pin to the electrode pad formed by embedding the conductive metal in the opening groove of the plate and the cross-heating plate by electroplating.

In addition, as the size of the probe card increases, the probe head is composed of an integrated multilayer circuit board having a single plate size and a block circuit board block having a plurality of blocks to manufacture a probe card in which the probe heads are assembled in combination.

According to the present invention, the alignment plate may be variously configured to insert the probe pin in a precise position and to perform uniform and rapid assembly.

In addition, the upper alignment plate connection bar is formed between the upper alignment plate and the circuit board block, and the lower alignment plate connection bar is configured between the circuit board block and the lower alignment plate and separated from the circuit board block. It is assembled by the combination of the probe pin and the alignment plate having a structure capable of quickly replacing only the alignment plate, and the configuration of the probe head assembly.

In addition, the probe pin and the alignment plate may be variously combined to inspect the electrode pads that are variously arranged on the semiconductor chip, thereby fixing the probe pin at a precise position and assembling it quickly and uniformly.

In addition, it is possible to manufacture a probe card by combining the probe block in various configurations.

The present invention is not limited to the above-described embodiment, but various modifications are possible by those skilled in the art within the spirit and scope of the present invention.

[First Embodiment]

1A and 1B of the first embodiment of the present invention will be described below.

The overall configuration of the probe card 200 of the first embodiment is shown in Figure 1a, the probe head assembly is composed of a combination of a plurality of circuit board blocks 15 at both ends and a multi-layer circuit board 75 at the center It is done.

The probe head assembly may include a circuit board block connected to an upper probe plate 5 fixing upper probe pins 5 and upper probe pins 5 at both ends, and an upper alignment plate 10 at both ends of the probe head assembly. 15) and the lower end of the both ends of the circuit board block 15 is composed of a lower probe pin 20 in contact with the conduction pad of the lower surface and the lower alignment plate 25 for fixing the lower probe pin 20 is probe head frame ( 90) The lower probe pin 20 is mounted inside and is energized by contact with the pad land 108 disposed on the printed circuit board 100 to inspect the semiconductor chip for abnormality.

In addition, an intermediate contact array connected to the multi-layer circuit board 75 through which the probe pin 35 and the probe pin 35 are energized by connecting the probe pin 35 and the probe pin 35 to the upper end of the probe head assembly. It is comprised by the board 55.

The intermediate contact pin 54 is fixed to the alignment protrusion of the intermediate contact alignment plate 55 so that the upper junction pin and the lower junction pin of the intermediate contact pin 54 are the multilayer circuit board 75 and the printed circuit board 100. The pad land 108 disposed in the contact is energized.

As shown in Figure 1b, the registration groove (2a) formed in the support portion 2 of the upper probe pin (5) is a matching groove (2a) is a support portion when the alignment projection (7) formed in the upper alignment plate 10 protrudes to the upper surface (2) It is formed in the lower side is the matching groove (2a) is matched with the alignment projection 7 of the upper alignment plate 10 is fixed.

In addition, the junction part 3 formed at the central end of the support part 2 is inserted into the insertion groove 6 opened in the upper alignment plate 10 so that the cross section of the junction part 3 is the circuit board block 15. It is bonded to the intaglio pad 18a disposed in a zigzag pattern on the upper surface.

In addition, the upper junction 21 extending upward from the support 22 constituting the lower probe pin 20 is energized by bonding to the intaglio pads 18b disposed in a zigzag pattern on the lower surface of the circuit board block 15. The lower junction 23 extending downward from 22 is joined to and bonded to the pad land 108 disposed on the printed circuit board 100.

Then, an upper alignment plate connecting bar 12a is formed between the upper alignment plate 10 and the circuit board block 15, and a lower alignment plate connection bar 12b is disposed between the circuit board block 15 and the lower alignment plate 25. When the upper alignment plate 10 and the upper alignment plate connecting bar 12a is separated from the circuit board block 15, the upper alignment plate 10 is broken when the upper probe pin 5 is broken during use. Only by separating the upper alignment plate connecting bar (12a) will have a structure that can be replaced quickly.

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8A shows an upper top alignment plate 10 and a bottom alignment plate 25 at the bottom. The upper alignment plate 10 of the upper end is formed by opening the alignment protrusion 7 and the upper probe pin insertion groove 6 for fixing the upper probe pin.

The upper alignment plate 10 has a structure in which a plurality of insertion grooves 6 are formed at equal intervals on the upper surface thereof, and alignment protrusions 7 protruding to the upper surface are formed on both sides of the insertion groove 6 opened. will be.

Upper probe pins are fixedly arranged at equal intervals on the alignment protrusions 7 formed on the upper alignment plate 10, and the insertion grooves 6 formed on the upper alignment plate 10 are arranged at equal intervals in a row in the same length direction. The alignment protrusions 7 of the upper alignment plate 10 having the two openings and the alignment protrusions 7 protruding upward on both sides of the insertion groove 6 are predetermined at the same intervals as the insertion grooves 6 opened in the longitudinal direction. A plurality of fixing slits 8a are formed in depth.

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8D shows an upper top alignment plate 10 and a bottom alignment plate 25 at the bottom. The lower alignment plate 25 of the lower end is formed by the alignment protrusion 27b and the lower probe pin insertion groove 26 for fixing the lower probe pins at equal intervals.

Insertion grooves 26 formed in the center of the lower alignment plate 25 is a plurality of openings in a zigzag arrangement at equal intervals in the same length direction, and lower alignment projections 27b protruding downward on both sides of the insertion grooves 26. A plurality of fixing slits 28a are formed in the alignment protrusions 27b of the hot plate 25 at equal intervals with the insertion grooves 26 opened in the same length direction of the lower alignment plate 25.

<< combination sorting board >＞

8A, 8B, 8C, and 8D show a combination alignment plate according to the protruding direction of the alignment protrusions formed on the upper alignment plate 10 and the lower alignment plate 25.

Combination alignment plate is the upper alignment plate 10 and the lower alignment plate 25 as shown in Figure 8a, the upper alignment plate 10 and the lower alignment plate 25 of the protruding alignment projections composed of opposite to each other, as shown in Figure 8b The protruding alignment protrusions of the upper alignment plate 10 and the lower alignment plate 25 face each other, and the alignment protrusions of the upper alignment plate 10 and the lower alignment plate 25 as shown in FIG. The upper alignment plate 10 and the lower alignment plate 25 is configured to protrude from the upper alignment plate 10 and the lower alignment plate 25 as shown in FIG. It can be configured in various combinations.

In addition, the upper alignment plate 10 and the lower alignment plate 25 are in parallel unit blocks according to the number of longitudinally arranged semiconductor chips formed on the wafer, and the number of alignment plate units is determined, and the alignment plate can be expanded to facilitate assembly. If the probe pin is broken, the broken probe pin can be replaced by removing the corresponding alignment plate block.

In addition, the total amount of semiconductor chips formed on the wafer may be configured as one alignment plate.

<< intermediate contact sorting plate >＞

As shown in FIG. 8E, the intermediate contact alignment plate 55 has alignment protrusions formed on the upper and lower surfaces thereof.

The intermediate contact alignment plate 55 is formed by inserting an insertion groove 56 for fixing the intermediate contact pins at regular intervals.

The intermediate contact alignment plate 55 has a plurality of intermediate contact pin insertion grooves 56 formed at the center thereof at the same length direction, and a plurality of alignment protrusions having the alignment protrusions protruding upward on both sides of the insertion groove 56. 57a) and the alignment protrusions 57b protruding downwardly are provided with a plurality of fixing slits 58a and 58b only partially deep at the same interval as the insertion grooves 56 opened in the longitudinal direction.

The alignment plate manufacturing method will be described below by describing the technical means and method for each step in Example 1 (manufacturing process A). Method of manufacturing the alignment plate of Example 2 (Manufacturing Process B) to Example 7 (Manufacturing Process F) The technical means and the method for each step are applied in the same manner as described in Example 1.

The manufacturing method of the upper alignment plate 10, the intermediate contact alignment plate 55 and the lower alignment plate 25 of Example 1 is to be manufactured in step A of the alignment plate manufacturing process as shown in FIG. 9A, and the manufacturing method of each step is performed. In Example 1, the technical means and the method described later will be used.

A step of depositing an oxide film on the selected top plate;

B) applying a primary photoresist on the deposited oxide film;

Exposing and developing with a primary mask having an opening groove shape formed on the coated photoresist;

D) through-opening the opening groove shape formed by exposure and development by dry etching;
The through-opening opening is performed by a dry etching process by a mixed gas in which SF 6, C4F8 and O2 gases, which are reactive etching gases, are mixed at a predetermined ratio. In this case, the dry etching process is performed by a deep dry etching method and is made by a known reactive ion etching (RIE) called a bosch process.

Removing the oxide film and the primary photoresist remaining on the top surface of the alignment plate;

Depositing an oxide film on a lower surface of the alignment plate;

G step of applying a second photoresist on the bottom surface of the alignment plate on which the oxide film is deposited;

Exposing and developing with a secondary mask having protrusions formed on the applied secondary photoresist;

I-wetting the alignment protrusions formed by exposure and development;
The alignment protrusion is a wet etching process using a chemical mixture of potassium hydroxide (KOH) and deionized water in a predetermined ratio, respectively, and is anisotropically etched by the chemical etching process to form columnar alignment protrusions. Is formed.

Removing the oxide film and the secondary photoresist remaining on the bottom surface of the alignment plate;

Depositing an insulating film on the entire alignment plate;
The insulating film deposition is a chemical vapor deposition (CVD) process by growing an oxide film at a temperature of 900 ℃ to 1100 ℃ for 150 minutes to 350 minutes time to form an insulating film of 1um to 2um thickness.

Depositing a polymer on a surface without protrusions; It is made of.

The opening grooves and the alignment protrusions penetrating through the upper and lower alignment plates 10 and 110, the intermediate contact alignment plate 55, and the cross alignment plate 65, 70, and 165 of Examples 1 and 2 are photolithography processes. And an opening groove which is manufactured by an etching process, and is opened through the upper alignment plates 10 and 110, the lower alignment plate 25, the intermediate contact alignment plate 55, and the cross alignment plates 65, 70, and 165 of Examples 3 to 5. Is produced by the photolithography process and the etching process, the groove of the predetermined depth is processed by the photolithography process and the etching process, and the alignment process is carried out by a method of manufacturing and bonding separately. The opening grooves penetrated through the upper alignment plates 210 and 310 and the cruciform alignment plates 265 and 365 of Example 6 and Example 7 are manufactured by a photolithography process and an etching process. Looking in more detail the manufacturing method of forming an opening groove formed through the opening plate and the alignment protrusion pillar to a desired height or to form a projection groove to a predetermined depth in each of the alignment plates through the opening grooves are SF6, C4F8 and the reactive etching gas O 2 gas is carried out in a dry etching process by a mixed gas mixed in a proportion. In this case, the dry etching process is performed by a deep dry etching method and is made by a known reactive ion etching (RIE) called a Bosch process, and the alignment protrusion is potassium hydroxide (KOH) and deionized water (Deionized water). Is a wet etching process using chemicals, each of which is mixed in a predetermined ratio, and the alignment plates are anisotropically etched by the wet etching process by the chemical to form columnar alignment protrusions. Alternatively, the hydrofluoric acid (HF), nitric acid (HNO 3) and acetic acid (CH3 COOH) are each formed by a wet etching process using a chemical mixed in a predetermined ratio, each of the alignment plates by the wet etching process by the chemical. Isotropic etching is performed to form columnar alignment protrusions. In addition, the protrusion grooves, the fixed support grooves, and the conducting electrode grooves and the mounting support grooves having a predetermined depth, which are completely anisotropic, are dry-etched by a mixed gas in which the reactive etching gases SF 6, C4F8 and O2 gas are mixed at a constant ratio. Carried out in the process. At this time, the dry etching process is performed by a deep dry etching method and is made by a reactive ion etching (RIE) called a Bosch process. The predetermined depth of the protrusion groove and the fixed support groove is formed to 100㎛ to 200㎛.

The material of the upper alignment plate, the lower alignment plate, the intermediate contact alignment plate and the cross alignment plate of Examples 1 to 7 is formed of a silicon substrate.

The alignment protrusions of the upper alignment plate 10, the lower alignment plate 25, and the intermediate contact alignment plate 55 of Example 1 and the alignment protrusions of the upper alignment plate 10 and the lower alignment plate 25 of Example 2 are 45 degrees or more. It is etched at an angle of 90 degrees.

An insulating thin film is deposited by an oxide film or a nitride film on the exposed front surface of the upper and lower alignment plates, the intermediate contact alignment plate, and the cross alignment plate of Examples 1 to 7.

The method of insulating thin film deposition on the upper and lower alignment plates, the intermediate contact alignment plate, and the cross alignment plate of Examples 1 to 7 is performed by deposition to a desired thickness through a chemical vapor deposition (CVD) process or the like.

Polymers (polymer elastomers) are coated on the lower surfaces of the upper and lower alignment plates and the cruciform alignment plates of Examples 1 to 7.

The area size of the upper alignment plate, the lower alignment plate and the intermediate contact alignment plate of Examples 1 to 7 is molded into a circuit board block area size or a multilayer circuit board integrated area size.

[Second Embodiment]

Embodiment 2 of the present invention will be described below with reference to FIGS. 2A and 2B. The overall configuration of the probe card 300 of the second embodiment of the present invention, as shown in Figure 2a, a multi-layer circuit board 75 for fixing the prop pin 35 and the probe pin 35 at both ends of the probe head assembly ) And an intermediate contact alignment plate 55 connected to the multilayer circuit board 75, and an upper probe pin 5, an upper alignment plate 10, and a circuit board block 30 at the center of the probe head assembly. ) And the lower probe pin 20 and the lower alignment plate 25 will be configured.

The probe head assembly includes an upper alignment plate 10 having an upper probe pin 5 fixed to the upper end of the center portion, a circuit board block 30 at the central end thereof, and a lower alignment plate having a lower probe pin 20 fixed to the lower end of the center portion. It consists of (25).

In addition, a multi-layer circuit board 75 for bonding and fixing the prop pins 35 and the probe pins 35 to the upper ends of the probe head assembly, and intermediate contact alignment connected to the multi-layer circuit boards 75 at the lower ends of the probe head assembly. The upper contact pin and the lower contact pin, which are fixed to the plate 55 and the intermediate contact alignment plate 55, are integrated into the pad land 108 disposed on the printed circuit board 100 by the intermediate contact pin 54. The lower contact pin of the contact pin 54 is in contact with the electricity

As shown in FIG. 2B, an upper alignment plate connecting bar 12a is formed between the upper alignment plate 10 and the circuit board block 30, and the upper alignment plate 10 and the upper alignment plate are connected at the circuit board block 30. When the bar 12a is used as a separate structure when the probe pin is broken during use, the broken top alignment plate 10 and the top alignment plate connecting bar 12a have a structure that can be replaced quickly.

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8B shows an upper top alignment plate 10 and a bottom alignment plate 25 at the bottom. The upper alignment plate 10 of the upper end is formed by the alignment projection 7 and the insertion groove 6 for inserting the upper probe pin (not shown) to fix the upper probe pin (not shown) at regular intervals and is formed Opening the insertion groove (6) is a plurality of openings at equal intervals in the same longitudinal direction and the alignment projections (7) of the upper alignment plate (10) protruding downward alignment projections on both sides of the insertion groove (6) is the length A plurality of fixing slits 8b are formed at a predetermined depth at the same interval as the insertion groove 6 opened in the direction.

The upper alignment plate 10 can be easily assembled by the upper alignment plate 10 in an extended manner, and the quantity of the upper alignment plate 10 is determined in parallel according to the number of longitudinally arranged semiconductor chips formed on the wafer. When the probe pin 5 is broken, only the upper alignment plate 10 can be removed to replace the broken probe pin, thereby enabling immediate repair.

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8B shows an upper top alignment plate 10 and a bottom alignment plate 25 at the bottom. The lower alignment plate 25 at the bottom has an alignment protrusion 27 for arranging the lower probe pins (not shown) at equal intervals and an insertion groove 26 for inserting the lower probe pins (not shown) at equal intervals in the same direction. A plurality of openings in a zigzag arrangement and the lower alignment plate 25 protruding upward from the bottom alignment plate 25 protruding upwards on both sides of the insertion groove 26 and the lower alignment plate in the longitudinal direction ( A plurality of fixing slits 28b are formed at a predetermined depth with the same interval as the insertion groove 26 opened in the 25).

The manufacturing method of the upper alignment plate 10 and the lower alignment plate 25 of the second embodiment is manufactured by the alignment plate manufacturing process B as shown in FIG. 9B, and the manufacturing method of each step is described in the first embodiment. And the way.

A step of depositing an oxide film on the selected alignment plate;

B) applying a primary photoresist on the deposited oxide film;

Exposing and developing with a primary mask having protrusions formed on the applied primary photoresist;

D) forming a protrusion formed by exposure and development by wet etching;
The protrusion is formed by a wet etching process using a chemical mixture of hydrogen fluoride (HF), nitric acid (HNO 3), and acetic acid (CH 3 COOH) in predetermined ratios, and isotropically etched by the wet etching process by the chemical. Columnar alignment protrusions are formed.

E step of removing the oxide film and the primary photoresist remaining on the alignment plate;

F f applying a secondary photoresist on the wet etched alignment plate;

Exposing and developing with a secondary mask having an opening groove shape formed on the applied secondary photoresist;

H-opening the opening groove shape formed by exposure and development through dry etching;
The through-opening opening is performed by a dry etching process by a mixed gas in which SF6, C4F8 and O2 gas, which are reactive etching gases, are mixed at a predetermined ratio. In this case, the dry etching process is performed by a deep dry etching method and is made by a reactive ion etching (RIE) called a Bosch process.

Removing the secondary photoresist remaining on the alignment plate;

Depositing an insulating film on the entire alignment plate;
The insulating film deposition is a chemical vapor deposition (CVD) process by growing an oxide film at a temperature of 900 ℃ to 1100 ℃ for 150 minutes to 350 minutes time to form an insulating film of 1um to 2um thickness.

[Third Embodiment]

In the configuration of the probe card 400 according to the third embodiment of the present invention, as shown in FIG. 3, the probe head assembly is made up of a cross alignment plate 65.

As shown in Figure 3, the probe head assembly is connected to the upper probe pin (5) in the crisscross projections (67) of the crisscross plate (65) of the upper and the crisscross plate connection is connected to the crisscross plate (65) The bar 61 and the lower circuit board block 45 are embedded in the probe head frame 92.

The wiring pattern conducting electrode of the circuit board block 45 has an embossed pad shape.

The lower probe portion of the upper probe pin 5 is bonded to the embossed pad 46a disposed on the upper surface of the circuit board block 45 and connected to the circuit board block 45 to be mounted on the probe head frame 92 and the circuit. The flexible conductors 95 are bonded to the embossed pads 46b disposed in the zigzag pattern on the bottom surface of the substrate block 45, and the flexible conductors 95 are bonded to the pad lands 108 disposed in the zigzag pattern on the printed circuit board 100. Will be energized.

The crisscross alignment plate 65 forms a plurality of crisscross projections by continuously arranging the alignment protrusions vertically and horizontally on the same top surface in a vertical row. The method of forming the alignment protrusions on the cross alignment plate 65 includes forming the cross alignment protrusions by etching the protrusion grooves on the cross alignment plate 65 and forming the alignment protrusions separately to join separate alignment protrusions to the protrusion grooves. It is.

The cross alignment protrusions form a first alignment protrusion 67a and a second alignment protrusion 67b in a transverse direction on the same upper surface of the cross alignment plate 65, and the first alignment lines in the longitudinal direction on the same upper surface of the cross alignment plate 65. A plurality of cross alignment protrusions are formed by continuously forming the alignment protrusions 68a and the second alignment protrusions 68b up, down, left and right, and the width of the protrusions and the second alignment protrusions of the first alignment protrusions 67a formed in the transverse rows. The magnitude | size of protrusion width of (67b) is the same.

The matching groove of the upper probe pin 5 is fixed to the first alignment protrusion 68a and the second alignment protrusion 68b of the vertical row, and the first alignment protrusion 67a and the second alignment protrusion 67b are also transverse. ) Is to match the groove of the upper probe pin (5).

The probe head assembly in which the probe pin is assembled to the cross-shaped protrusions is a probe head capable of inspecting a plurality of semiconductor chips using a semiconductor chip pad (Conventional Perimeter, Area Array) multi-parametrically disposed.

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Fourth Embodiment

The overall configuration of the probe card 500 according to the fourth embodiment of the present invention is a probe head assembly formed by fixing the upper probe pin 5 to the crosshairs 70 as shown in FIG.

The cruciform heating plate 70 fixing the upper probe pin 5 and the cruciform heating plate connecting bar 61 and the circuit board block 50 connected to the cruciform heating plate 70 are connected to the probe head frame 92. The circuit board block 50 is mounted and is energized with the printed circuit board 100 by the conductive pin 97. The cross alignment plate 70 has a first alignment protrusion 67, a second alignment protrusion 68, and a third alignment protrusion 69 formed transversely on the same surface, and the cross alignment plate 70 is formed on the same surface. The first alignment protrusion 67a, the second alignment protrusion 68a, and the third alignment protrusion 69a are vertically formed in a vertical row in the up, down, left, and right directions to form a plurality of cross alignment protrusions. The projection width of 67 and the projection width of the third alignment projection 69 are the same size, and the projection width of the second alignment projection 68 is larger than the projection width of the first alignment projection 67. In addition, the protrusion width of the first alignment protrusion 67a of the vertical column and the protrusion width of the third alignment protrusion 69a are the same size, and the protrusion width of the second alignment protrusion 68a is the protrusion of the first alignment protrusion 67a. Larger than width In addition, the left end of the support part of the upper probe pin is fixed to the first alignment protrusion 67 and the second alignment protrusion 68 to the alignment protrusion formed in the transverse line, and the right end of the support part of the upper probe pin 5 is first It is fixed to the two alignment projections 68 and the third alignment projections 69. In addition, one end of the left side of the upper probe pin (5) support portion is fixed to the first alignment protrusion (67a) and the second alignment protrusion (68a) to the alignment protrusion formed in the vertical column, the right end of the support portion of the upper probe pin (5) The second alignment protrusion 68a and the third alignment protrusion 69a are fixed. The method of forming the alignment protrusions on the cross alignment plate 70 is to form the cross alignment protrusions by etching the protrusion grooves on the cross alignment plate 70 and forming the alignment protrusions separately to bond the separate alignment protrusions to the protrusion grooves. .

The probe head assembly in which the probe pin is assembled to the cross-shaped protrusion is a probe head capable of inspecting a plurality of semiconductor chips by using a semiconductor chip pad (Conventional Perimeter, Area Array) multi-parametrically disposed.

The method of manufacturing the cruciform heating plate 65 of Example 3 and the cruciform heating plate 70 of Example 4 is manufactured by the alignment plate manufacturing process C as shown in FIG. 9C, and the manufacturing method of each step is comprehensive in Example 1 The technical means and method described above are used.

A step of applying a primary photoresist on the selected top plate;

B) exposing and developing with a primary mask having an opening groove shape formed on the applied primary photoresist;

C) through-opening the opening groove shape formed by exposure and development by dry etching;
The through-opening opening is performed by a dry etching process by a mixed gas in which SF6, C4F8 and O2 gas, which are reactive etching gases, are mixed at a predetermined ratio. In this case, the dry etching process is performed by a reactive ion etching (RIE) called a Bosch process.

Removing the primary photoresist remaining on the top surface of the alignment plate;

(E) applying a second photoresist on the bottom surface of the alignment plate;

F and exposing with a secondary mask having protrusion recesses formed on the applied secondary photoresist;

G of deep dry etching the protrusion recesses formed by exposure and development;
The through-opening opening is performed by a dry etching process by a mixed gas in which SF6, C4F8 and O2 gas, which are reactive etching gases, are mixed at a predetermined ratio. In this case, the dry etching process is performed by a reactive ion etching (RIE) called a Bosch process. The predetermined depth of the protrusion recess is formed to 100㎛ to 200㎛.

Removing the secondary photoresist remaining on the lower surface of the alignment plate;

I step of joining the matching protrusion to the protrusion groove;
The alignment protrusions are separately molded to bond separate alignment protrusions to the protrusion grooves, and the separate alignment protrusions are formed of the same material as the alignment plate material to be bonded to the protrusion grooves by thermocompression bonding, and enodic bonding.

Depositing an insulating film on the entire alignment plate;
The insulating film deposition is a chemical vapor deposition (CVD) process by growing an oxide film at a temperature of 900 ℃ to 1100 ℃ for 150 minutes to 350 minutes time to form an insulating film of 1um to 2um thickness.

K depositing a polymer on the surface without protrusions; It is made of.

[Example 5]

Embodiment 5 of the present invention, as shown in Figures 5a and 5b, by forming a conducting electrode and the alignment projections on the upper alignment plate 110 and the cross-aligning plate 165 to bond the probe pin junction piece to the conducting electrode It is a probe head assembly that is energized by matching the matching pieces of the probe pin to the alignment projection.

In the upper alignment plate 110 and the cruciform alignment plate 165, a junction piece of the probe pin is joined to a conducting electrode formed on the upper surface of the upper alignment plate 110 and the cross alignment plate 165, and intermediate contact alignment. The upper contact pin of the intermediate contact pin fixed to the plate is bonded to the conductive pad formed on the lower surface of the upper alignment plate 110 and the cruciform alignment plate 165, the lower portion of the intermediate contact pin fixed to the intermediate contact alignment plate The contact pin is energized by contacting the conduction pad formed on the printed circuit board.

That is, the upper alignment plate 110 and the cross alignment plate 165 are bonded to a probe pin (not shown) to a conducting electrode 89 formed by burying a conductive metal in an opening groove into which the junction of the probe pin is inserted. It is energized by the alignment projections (not shown) of the alignment pin is fixed to the top alignment plate 110 and the cross-aligning plate 165 in a way that the probe pin is fixed and energized.

As shown in Figure 5a, the junction portion (not shown) of the probe pin is bonded to the conducting electrode (89a) of the upper alignment plate 110 and the matching piece (not shown) of the probe pin is the alignment projection 107 of the upper alignment plate. A plurality of conducting electrodes 89a are disposed at equal intervals in the same length direction on the upper surface of the upper alignment plate 110, which is fixed to match and fixed to the probe pins (not shown). On both sides of the alignment protrusion 107 is formed of a structure formed. In addition, the alignment protrusion 107 protruding upward is a plurality of fixed slits 108a are partially formed in the longitudinal direction.

As shown in FIG. 5B, the junction (not shown) of the probe pin is connected to the conduction electrode 89a of the cross alignment plate 165, and the registration piece (not shown) of the probe pin is aligned on the cross alignment protrusion 167. It is fixed to match the projections, the cross-aligning plate 165 is to form the alignment projections cross to assemble the probe pin (not shown) to the cross-aligned projections 167.

The crisscross projections 167 are formed on the upper surface of the cruciform heating plate 165 in succession up, down, left, and right to form a plurality of cross crystal projections 167.

The cruciform plates 165 fixedly arranged at equal intervals have a plurality of conducting electrodes 89a disposed at equal intervals around the cruciform projections 167 and a crisscross projections 167 on both sides of the conducting electrodes 89a. ) Is made of a structure formed.

In addition, the protruding cross-vertical protrusion 167 has a fixed slit 168a only at a partial depth.

The manufacturing method of the upper alignment plate 110 and the cruciform alignment plate 165 of Example 5 is manufactured by the alignment plate manufacturing process D as shown in FIG. 9D, and the manufacturing method of each step is described above in the first embodiment. It is by means and by means.

A step of depositing an oxide film on the selected top plate;

B) applying a photoresist on the deposited oxide film;

Exposing and developing a mask having a probe pin conducting electrode groove shape and an alignment protrusion recess shape on a coated photoresist;

D-opening through the conductive electrode groove shape formed by exposure and development by dry etching and dry etching the alignment protrusion recess groove shape to a predetermined depth;
The through-opening conduction electrode grooves and the alignment protrusion recesses having a predetermined depth are performed in a dry etching process by a mixed gas in which SF 6, C 4 F 8, and O 2 gases, which are reactive etching gases, are mixed at a predetermined ratio. At this time, the dry etching process is performed by a deep dry etching method and is made by a reactive ion etching (RIE) called a Bosch process. The predetermined depth of the alignment protrusion groove is formed to 100㎛ to 200㎛.

Removing the photoresist remaining on the top surface of the alignment plate;

Depositing a conductive film in the through-opened conducting electrode groove;

G step of performing electroplating for embedding the conductive electrode material in the conductive electrode groove in which the conductive film is deposited;

A step h of planarizing the conductive electrode material metal embedded in the conductive electrode groove;

I step of bonding the alignment protrusion to the alignment protrusion groove;
The alignment protrusions are separately molded to bond separate alignment protrusions to the protrusion grooves, and the separate alignment protrusions are formed by insulating materials having excellent workability and thermocompression bonding to the protrusion grooves formed on each alignment plate. It is to join with a dick joint.

Depositing an insulating film on the entire surface of the alignment plate except for the shape of the conductive electrode groove;
The insulating film deposition is a chemical vapor deposition (CVD) process by growing an oxide film at a temperature of 900 ℃ to 1100 ℃ for 150 minutes to 350 minutes time to form an insulating film of 1um to 2um thickness.

K for depositing a polymer on a surface without a matching protrusion; It is made of.

[Sixth Embodiment]

As shown in FIGS. 6A and 6B, the sixth embodiment of the present invention forms a conducting electrode 89 and a fixing pad 82 on the upper alignment plate 210 and the cross alignment plate 265 to form the upper alignment plate. The probe head assembly is electrically connected to the junction groove of the probe pin to the conduction electrode 89 formed on the 210 and the cross-shaped heat exchanger plate 265 and the fixing support piece of the probe pin is fixed to the fixing pad by bonding. to be.

The upper alignment plate 210 and the cruciform alignment plate 265 are joined to the conductive electrode of the upper surface of the upper alignment plate 210 and the cruciform alignment plate 265, the junction groove of the probe pin, and the intermediate substrate member The connecting pin is energized by bonding to the pad land disposed on the printed circuit board by bonding to the bottom pad of the upper alignment plate 10 and the cross alignment plate 265.

That is, the junction part (not shown) of the probe pin is bonded to the upper electrode plate 210 and the cruciform plate 265 to a conducting electrode 89 formed by embedding a conductive metal in an opening groove into which the junction of the probe pin is inserted. It is energized, and the fixing support groove (not shown) of the probe pin is inserted into the fixing support groove of a predetermined depth to be the upper alignment plate 210 and the cross-aligning plate 265 in a way that the probe pin is energized and fixed. .

As shown in Figure 6a, the bonding groove (not shown) of the probe pin is bonded to the conducting electrode (89a) of the upper alignment plate 210 and the fixed support piece (not shown) of the probe pin is the upper alignment plate 210 Although not shown, the upper connection pin connected to the upper electrode pad of the intermediate substrate member is fixed to the fixing pad 82 of the lower substrate connected to the electrode pad when it is bonded to the lower surface conduction pad 89b of the upper alignment plate. The connecting pin is energized by bonding to the pad land disposed on the printed circuit board. The lower surface of the upper alignment plate 210 is coated with a polymer 94 (polymer elastomer). The polymer 94 coated on the lower surface of the upper alignment plate 210 acts as a buffer when the probe pin (not shown) fixed to the upper alignment plate 210 receives pressure to damage the upper alignment plate 210. To prevent.

In addition, a plurality of conductive electrodes 89a are disposed on the upper surface of the upper alignment plate 210 fixing the probe pins at equal intervals in the same length direction, and a plurality of fixing pads 82 are provided at both sides of the conductive electrode 89a. It is made of a formed structure.

As shown in FIG. 6B, a junction groove (not shown) of the probe pin is bonded to the conduction electrode 89a of the cross alignment plate 265, and the fixed support piece (not shown) of the probe pin is the cross alignment plate 265. Although not shown, the upper connection pin connected to the upper electrode pad of the intermediate board member is bonded to the lower surface conduction pad of the cross-shaped heat sink board and is attached to the lower electrode pad of the intermediate board member. The connected lower connection pins are energized by bonding to pad lands disposed on the printed circuit board.

The fixing pad 82 is formed up, down, left, and right of the conduction electrode of the crosshair plate 265, and the probe pin is assembled to the fixing pad 82.

A polymer 94 (polymer elastomer) is coated on the lower surface of the heat exchanger plate 265. The polymer 94 coated on the lower surface of the cruciform heating plate 265 serves as a buffer when the probe pin fixed to the cruciform heating plate 265 receives pressure to prevent the cruciform heating plate 265 from being damaged.

The cruciform plates 265 fixedly arranged at equal intervals have a plurality of conducting electrodes 89a disposed at equal intervals in all directions, and fixing pads 82 are formed on both sides of the conducting electrodes 89a. will be.

The manufacturing method of the upper alignment plate 210 and the cruciform alignment plate 265 of the sixth embodiment is manufactured by the alignment plate manufacturing process E as shown in FIG. 9E, and the manufacturing method of each step is described above in the first embodiment. It is by means and by means.

A step of depositing an oxide film on the selected top plate;

B) applying a photoresist on the deposited oxide film;

Exposing and developing with a mask having a probe pin conducting electrode groove shape and a fixed pad groove shape formed on the coated photoresist;

D) dry-etching the through hole and the fixed pad groove shape to a predetermined depth from the conducting electrode groove shape formed by exposure and development;
The through-electrode opening and the fixed pad groove having a predetermined depth are performed by a dry etching process by a mixed gas in which a reactive etching gas, SF 6, C4F8 and O2 gas, is mixed at a predetermined ratio. At this time, the dry etching process is performed by a deep dry etching method and is made by a reactive ion etching (RIE) called a Bosch process. The predetermined depth of the fixing pad groove is formed to 100㎛ to 200㎛.

Removing the photoresist remaining on the top surface of the alignment plate;

Depositing an insulating film on the entire surface of the alignment plate except for the shape of the conductive electrode groove and the shape of the fixed pad groove;
The insulating film deposition is a chemical vapor deposition (CVD) process by growing an oxide film at a temperature of 900 ℃ to 1100 ℃ for 150 minutes to 350 minutes time to form an insulating film of 1um to 2um thickness.

Depositing a conductive film in the penetrating opening electrode groove and the fixed pad groove having a predetermined depth;

Performing an electroplating process in which the conductive electrode material is embedded in the conductive electrode groove and the fixed pad groove in which the conductive film is deposited;

I) planarizing the conductive electrode material metal embedded in the conductive electrode groove and the fixed pad groove;

Depositing a polymer on a surface having no matching protrusion; It is made of.

[Seventh Embodiment]

7A and 7B of the present invention, as shown in FIGS. 7A and 7B, an upper support plate 310 and a cross alignment plate 365 form a conducting electrode and mounting support piece grooves on both sides of the conducting electrode to form the upper alignment plate. (310) and the junction groove (not shown) of the probe pin to the conduction electrode formed on the cross-shaped heat plate (365) is energized and the mounting support piece of the probe pin in the mounting support piece grooves formed on both sides of the conduction electrode A probe head assembly that is mounted and fixed.

That is, the junction part (not shown) of the probe pin is bonded to the upper electrode plate 310 and the cruciform plate 365 by forming a conductive metal in the opening groove into which the junction of the probe pin is inserted. It is energized so that the mounting support groove (not shown) of the probe pin is inserted into the mounting support groove of the through opening to be the upper alignment plate 310 and the cross alignment plate 365 in such a way that the probe pin is fixed with electricity. .

As shown in FIG. 7A, a bonding groove (not shown) of the probe pin is bonded to the conducting electrode 89a of the upper alignment plate 310, and the mounting support piece (not shown) of the probe pin is the upper alignment plate 310. Although not shown, the upper junction pin of the intermediate contact pin fixed to the intermediate contact alignment plate is bonded to the conduction pad 89b formed on the lower side of the upper alignment plate, The lower junction pin of the intermediate contact pin is energized by bonding to the pad land disposed on the printed circuit board. The upper and lower intermediate contact pins fixed to the intermediate contact alignment plate are made of an intermediate contact pin in which the upper junction pin, the contact pin support part, and the lower junction pin are integrated.

In addition, a plurality of conducting electrodes 89 are disposed on the upper surface of the upper alignment plate 310 for joining the probe pins at equal intervals in the same length direction, and a plurality of mounting support piece grooves 84 are provided at both sides of the conducting electrodes. It is made of a formed structure.

As shown in FIG. 7B, a joining groove (not shown) of the probe pin is joined to the conducting electrode 89a of the cruciform plate 365, and the mounting support piece of the probe pin is a mounting support piece groove of the cruciform plate 365. Although not shown, the upper bonding pins of the intermediate contact pins fixed to the intermediate contact alignment plates are joined to the conduction pads 89b formed on the lower surface of the cruciform plates, and the lower junctions of the intermediate contact pins are fixed to the 84. The pins are energized by bonding to pad lands disposed on the printed circuit board.

The mounting support piece groove 84 is composed of a plurality of mounting support grooves 84 are formed continuously up, down, left and right around the conducting electrode.

The mounting support piece groove 84 is formed on the upper surface of the cruciform plate 365 to fix and assemble the probe pin to the mounting support piece groove 84.

The cruciform plates 365 fixedly arranged at equal intervals have a structure in which a plurality of conducting electrodes 89a are disposed at equal intervals in all directions and mounting support piece grooves 84 are formed at both sides of the conducting electrodes 89a. It consists of.

The manufacturing method of the upper alignment plate 310 and the cruciform alignment plate 365 of the seventh embodiment is manufactured by the alignment plate manufacturing process F as shown in FIG. 9F, and the manufacturing method of each step is described above in the first embodiment. It is by means and by means.

A step of depositing an oxide film on the selected top plate;

B) applying a photoresist on the deposited oxide film;

C) patterning the photoresist on the coated photoresist with exposure and development using a mask having a probe pin conducting electrode groove shape and a mounting support groove shape;

D) through-opening the conductive electrode groove shape and the mounting support groove shape patterned by exposure and development through dry etching;
The through-opening electrode groove and the mounting support groove are performed by a dry etching process by a mixed gas in which SF6, C4F8 and O2 gas, which are reactive etching gases, are mixed at a predetermined ratio. At this time, the dry etching process is performed by a deep dry etching method and is made by a reactive ion etching (RIE) called a Bosch process.

Removing the photoresist remaining on the top surface of the alignment plate;

Depositing an insulating film on the entire surface of the mounting support groove and the alignment plate except for the shape of the conductive electrode groove;

Depositing a conductive film in the through-opened conducting electrode groove and the mounting support groove;

Performing an electroplating process for embedding the conductive electrode material in the conductive electrode groove in which the conductive film is deposited;

I) planarizing the conductive cathode material metal overfilled in the conducting electrode groove;

Depositing a polymer on a surface having no matching protrusion; It is made of.

1A is a cross-sectional view illustrating a probe card 200 having a probe pin assembled to a probe head of a first embodiment.

Figure 1b is a cross-sectional view illustrating a probe block assembled with a probe pin on the alignment plate of the first embodiment.

Figure 2a is a cross-sectional view illustrating a probe card 300, the probe pin is assembled to the probe head of the second embodiment.

Figure 2b is a cross-sectional view illustrating a probe block assembled with a probe pin on the alignment plate of the second embodiment.

3A is a perspective view illustrating a probe card 400 in which probe pins are assembled on a cross alignment plate 60 in which alignment protrusions are formed on the same surface of the third embodiment.

Figure 3b is a perspective view illustrating a probe card (400A) of another structure in which the probe pin is assembled to the cross-aligning plate (65A) is formed with alignment projections on the upper and lower surfaces of the third embodiment.

4 is a perspective view illustrating a probe card 500 in which probe pins are assembled on a cross alignment plate 70 having alignment protrusions formed on the same surface of the fourth embodiment.

5A and 5B are perspective views illustrating a state in which a conductive electrode is formed on the upper alignment plate 110 and the cross alignment plate 165 of the fifth embodiment.

6A and 6B are perspective views illustrating a state in which a conductive electrode and a fixing pad are formed on the upper alignment plate 210 and the cross alignment plate 265 of the sixth embodiment.

7A and 7B are perspective views illustrating a state in which a conducting electrode and a mounting support groove are formed in the upper alignment plate 310 and the cross alignment plate 365 of the seventh embodiment.

8A, 8B, 8C, and 8D are perspective views illustrating a state in which the alignment plates are combined.

8E is a perspective view illustrating an intermediate contact alignment plate.

9A, 9B, 9C, 9D, 9E, and 9F are process charts illustrating manufacturing methods A, B, C, D, E, and F of the alignment plate of the present invention.

<Code for main part of drawing>

5: Upper probe pin 7: Alignment protrusion 10: Upper alignment plate

12: upper alignment plate connecting bar 20: lower probe pin 25: lower alignment plate

55: intermediate contact heat exchanger 65: crisscross heat exchanger 90: probe head frame

100: printed circuit board 200, 300, 400, 500: probe card

Claims (6)

The manufacturing method A of the upper alignment plate 5, the intermediate contact alignment plate 55 and the lower alignment plate 25 is A step of depositing an oxide film on the selected top plate; B) applying a primary photoresist on the deposited oxide film; Exposing and developing with a primary mask having an opening groove shape formed on the coated photoresist; D) through-opening the opening groove shape formed by exposure and development by dry etching; Removing the oxide film and the primary photoresist remaining on the top surface of the alignment plate; Depositing an oxide film on a lower surface of the alignment plate; G step of applying a second photoresist on the bottom surface of the alignment plate on which the oxide film is deposited; Exposing and developing with a secondary mask having protrusions formed on the applied secondary photoresist; I-wetting the projection shape formed by exposure and development; Removing the oxide film and the secondary photoresist remaining on the bottom surface of the alignment plate; K for depositing an insulating film on the entire alignment plate; Depositing a polymer on a surface without protrusions; Method for manufacturing a heat sink plate of the advanced probe card. The manufacturing method B of the upper and lower alignment plates 5 and 25 A step of depositing an oxide film on the selected alignment plate; B) applying a primary photoresist on the deposited oxide film; Exposing and developing with a primary mask having protrusions formed on the applied primary photoresist; D) forming a protrusion formed by exposure and development by wet etching; E step of removing the oxide film and the primary photoresist remaining on the alignment plate; F coating a second photoresist on the wet etched plate oxide film; Exposing and developing with a secondary mask having an opening groove shape formed on the applied secondary photoresist; Step h, through opening of the opening groove shape formed by exposure and development through dry etching Removing the secondary photoresist remaining on the alignment plate; Depositing an insulating film on the entire alignment plate; Method for manufacturing a heat sink plate of the advanced probe card. Method C of the crisscross heating plates 60, 70 is A step of applying a primary photoresist on the selected top plate; B) exposing and developing with a primary mask having an opening groove shape formed on the applied primary photoresist; C) through-opening the opening groove shape formed by exposure and development by dry etching; Removing the primary photoresist remaining on the top surface of the alignment plate; (E) applying a second photoresist on the bottom surface of the alignment plate; F and exposing with a secondary mask having protrusion recesses formed on the applied secondary photoresist; G of deep dry etching the protrusion recesses formed by exposure and development; Removing the secondary photoresist remaining on the lower surface of the alignment plate; I step of joining the matching protrusion to the protrusion groove; Depositing an insulating film on the entire alignment plate; K depositing a polymer on the surface without protrusions; Method for manufacturing a heat sink plate of the advanced probe card. The manufacturing method D of the upper alignment plate 110 and the cross alignment plate 165 is A step of depositing an oxide film on the selected top plate; B) applying a photoresist on the deposited oxide film; Exposing and developing a mask having a probe pin conducting electrode groove shape and an alignment protrusion recess shape on a coated photoresist; A d step of through-opening the conductive electrode groove shape formed by exposure and development through dry etching and dry etching the alignment protrusion recess groove to a predetermined depth; Removing the photoresist remaining on the top surface of the alignment plate; Depositing a conductive film in the through-opened conducting electrode groove; G step of performing electroplating for embedding the conductive electrode material in the conductive electrode groove in which the conductive film is deposited; A step h of planarizing the conductive electrode material metal embedded in the conductive electrode groove; I step of bonding the alignment protrusion to the alignment protrusion groove; Depositing an insulating film on the entire surface of the alignment plate except for the shape of the conductive electrode groove; K for depositing a polymer on a surface without a matching protrusion; Method for manufacturing a heat sink plate of the advanced probe card. The manufacturing method E of the upper alignment plate 210 and the cross alignment plate 265 is A step of depositing an oxide film on the selected top plate; B) applying a photoresist on the deposited oxide film; Exposing and developing with a mask having a probe pin conducting electrode groove shape and a fixed pad groove shape formed on the coated photoresist; D) through-opening the conductive electrode groove shape formed by exposure and development and dry etching the fixed pad groove shape to a predetermined depth; Removing the photoresist remaining on the top surface of the alignment plate; Depositing an insulating film on the entire surface of the alignment plate except for the shape of the conductive electrode groove and the shape of the fixed pad groove; Depositing a conductive film in the through-opened conducting electrode groove and the fixed pad groove; Performing an electroplating process in which the conductive electrode material is embedded in the conductive electrode groove and the fixed pad groove in which the conductive film is deposited; I) planarizing the conductive electrode material metal embedded in the conductive electrode groove and the fixed pad groove; Depositing a polymer on a surface having no matching protrusion; Method for producing a alignment plate of the probe head assembly consisting of. The manufacturing method E of the upper alignment plate 310 and the cross alignment plate 365 is A step of depositing an oxide film on the selected top plate; B) applying a photoresist on the deposited oxide film; Exposing and developing a mask having a probe pin conducting electrode groove shape and a mounting support groove shape formed on the coated photoresist; D) through-opening the conductive electrode groove shape and the mounting support groove shape formed by exposure and development through dry etching; Removing the photoresist remaining on the top surface of the alignment plate; Depositing an insulating film on the entire surface of the mounting support groove and the alignment plate except for the shape of the conductive electrode groove; Depositing a conductive film in the through-opened conducting electrode groove; Performing an electroplating process for embedding the conductive electrode material in the conductive electrode groove in which the conductive film is deposited; I) planarizing the conductive cathode material metal overfilled in the conducting electrode groove; Depositing a polymer on a surface having no matching protrusion; Method for manufacturing a heat sink plate of the advanced probe card.

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