KR100958329B1 - Light emitting diode package substrate having side reflective surface coated with metals using mask and manufacturing method thereof - Google Patents
Light emitting diode package substrate having side reflective surface coated with metals using mask and manufacturing method thereof Download PDFInfo
- Publication number
- KR100958329B1 KR100958329B1 KR1020090075307A KR20090075307A KR100958329B1 KR 100958329 B1 KR100958329 B1 KR 100958329B1 KR 1020090075307 A KR1020090075307 A KR 1020090075307A KR 20090075307 A KR20090075307 A KR 20090075307A KR 100958329 B1 KR100958329 B1 KR 100958329B1
- Authority
- KR
- South Korea
- Prior art keywords
- package substrate
- opening
- light emitting
- emitting diode
- metal
- Prior art date
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
Abstract
The present invention provides an expensive photoresist process when coating a metal reflective layer on a side of a polymer in an opening to increase brightness reliability and light extraction efficiency of a light emitting diode package substrate molded by polymer-based plastic on a metal electrode. Instead, the present invention relates to a light emitting diode package substrate manufactured by applying a mask and a method of manufacturing the same. When there is no heat slug at the bottom of the opening, the metal reflective layer is divided into regions electrically insulated by the number of electrodes, and each region is connected to one of the bottom metal electrodes. In the LED package substrate according to the present invention, a mask that can be repeatedly used in a three-dimensional structure having a through hole corresponding to a light reflection surface area inside the opening is mounted on a package substrate having an opening for mounting the LED chip. In addition, the metal reflective surface is formed by coating a metal material on the light reflection surface area by a predetermined coating method.
Description
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a package substrate for a light emitting diode, wherein the first package of a light emitting diode improves luminance reliability by preventing continuous degradation of the polymer due to deterioration of the polymer as the use time increases. In order to increase light extraction efficiency by using an excellent metal material, a light emitting diode package substrate coated with a metal reflective layer on the side of an opening made of a polymer, and a method of manufacturing the same. An expensive photoresist and an exposure device are generally used. The present invention relates to a light emitting diode package substrate manufactured by forming a metal reflective layer in a desired pattern in an opening by applying a mask having a three-dimensional shape, which can be repeatedly used instead of using a process.
The light emitting diode is a structure in which an active layer is bonded between a p-type semiconductor layer and an n-type semiconductor layer, and when a forward voltage is applied, the light emitting diode recombines the excited electrons in the active layer to emit light. Such light emitting diodes are used as light emitting lamps of various electronic devices such as automobile dashboards, taillights, keyboards, traffic lights and LCD backlights.
Since these light emitting diodes are made in a chip form, they are often applied to a system (primarily a PCB) required in a package form mounted on a package substrate. BACKGROUND ART Package substrates for light emitting diodes, which are commonly used, include a metal electrode for supplying power, a housing (polymer or ceramic) that collects light forward, and a metal heat slug for dissipating heat generated from the device. (There is also a substrate without heat slug). The package substrate made of ceramic is excellent in durability against heat and light generated in the device, but is used only in special cases where high reliability is necessary because of its high price, and in most cases, a package substrate made of a polymer housing is used. However, the inner side of the opening in which the light emitting diode is mounted on the substrate having the polymer housing is affected by heat and short wavelength light generated from the device so that the color of the polymer turns black or leaks light due to cracks in the polymer. As a result, the phenomenon that the luminance gradually decreases with time occurs. When this happens, it becomes a serious problem in LCD-TV, monitor BLU, etc., which require high reliability even after long time use.
In order to solve this problem, coating the metal on the side reflecting surface of the polymer housing opening prevents discoloration over time, thereby improving luminance reliability and increasing the light extraction efficiency by coating a metal with better reflection efficiency than polymer. Can be. However, as shown in FIG. 1, the polymer that insulates the metal electrodes on the bottom surface of the package substrate should not be coated, and the metal reflective layer on the side of the opening portion is also two or more regions electrically separated by the number of metal electrodes. You must have In order to classify and coat the above-mentioned areas, a patterned barrier film is required to prevent the coating on a desired portion in advance. However, since the light emitting diode package substrate has a three-dimensional surface having a three-dimensional shape rather than a plane, it is not only a technically difficult problem but also expensive materials and materials when the existing PR (Photo Resist) or Dry Film PR is applied. The use of equipment (exposures) leads to a high cost and low productivity, which leads to a significant increase in price, which makes it more advantageous to use a packaging substrate with a high performance ceramic housing. Therefore, it is necessary to develop a metal coating method and a package substrate using the same in a desired form at a low cost.
Accordingly, an object of the present invention is to solve the above-described problem, and an object of the present invention is to provide a three-dimensional mask in close contact with an opening of a package substrate without using an expensive PR, and to provide an inclined surface inside the opening in which the LED chip is mounted. The present invention provides a package substrate for a light emitting diode manufactured by easily coating a metal reflective layer and a method of manufacturing the same.
In order to enable the formation of such a low-cost metal reflective layer, a metal electrode, which is a package board for low-cost LEDs, which is widely used in the past, is electrically insulated from a substrate having a polymer housing and separated into regions separated from each other by the number of electrodes. It has a structure for forming a true metal reflective layer. At this time, since each reflective layer is connected to one of the metal electrodes, the shape of the mask can be simplified to reduce the manufacturing cost of the mask and to apply electricity to the electrodes commonly connected to the plurality of substrate arrays in the plating process. Since the main surface is electrically connected to the reflective layers of each substrate at the same time, electroplating can be easily performed.
Another object of the present invention is to place a mask on a curved package substrate, and to coat the metal material on the side of the opening of the package substrate by vacuum deposition (Sputtering, Evaporation, CVD, etc.), electroplating or chemical plating, etc. The present invention provides a light emitting diode package substrate and a method of manufacturing the same by forming a reflective layer and improving light extraction efficiency and luminance reliability at low cost.
First, to summarize the features of the present invention, a light emitting diode package substrate for mounting a light emitting diode chip in a housing having an opening in accordance with an aspect of the present invention for achieving the above object, the bottom of the opening It includes at least two metal electrodes formed to be electrically insulated from the surface, and is predetermined in the reflective layer region except for the insulation portion of the bottom surface other than the metal electrodes and the insulation portion of the inclined surface inside the opening extending from the insulation portion of the bottom surface. It characterized in that it comprises a structure in which a reflective surface is coated with a metal material in a coating manner.
In the method of manufacturing a light emitting diode package substrate, a penetrating portion corresponding to a reflective layer region having a desired pattern (shape) is formed on a housing having an opening for mounting a light emitting diode chip (an opening may be formed in a polymer housing or a ceramic housing). A mask having a hole is placed thereon, and a reflective surface is formed by coating a metal material on the reflective layer region by a predetermined coating method. The mask is made of metal or polymer, or a combination of both, and can be reused at least thousands of times, depending on the working conditions, and has a three-dimensional shape that exactly matches the concave-convexities that do not coat the desired area within the package substrate opening. Are manufactured precisely.
In the LED package substrate manufactured by the above method, the reflective surface includes a bottom surface of the opening and an inclined surface from the bottom surface to the top surface of the package substrate and does not include the outside of the housing.
Before the coating, the bottom surface of the opening includes two or more metal electrodes formed to be electrically insulated, and the protruding portion of the bottom surface of the mask is in close contact with an insulating portion other than the metal electrodes to mask the metal material from being coded. It is characterized in that the manufactured.
Sides of the openings are made of polymer (or ceramic) series.
At least one or more of the adhesive layer, the intermediate layer, and the light reflection layer may be sequentially coated with a metal material.
The adhesive layer is coated by a vacuum deposition method or an electroless chemical plating method, and in the case of vacuum deposition, a mask is placed on a package substrate and plasma is applied to modify the exposed polymer surface to improve the adhesion of the adhesive layer. Coat the metal corresponding to the adhesive layer. On the other hand, in the case of electroless chemical plating of the adhesive layer, the mask is placed on the package substrate, the polymer surface exposed to the plasma is modified, the mask is removed, and the chemical plating is performed so that only the portion where the surface is modified is plated. .
The intermediate layer may be coated by a vacuum deposition method or an electroless chemical plating method or a combination of an electroless plating and an electrochemical method, and the light reflection layer may be coated by a vacuum deposition method or an electroplating method.
Before coating the adhesive layer, the metal material may be coated on the metal electrode formed on the bottom surface of the opening. The surface treatment may be performed by electroplating or electroless chemical plating.
According to the light emitting diode package substrate and the method of manufacturing the same, a metal reflective layer is easily formed in a desired shape on an inclined surface inside the opening in which the light emitting diode chip is mounted by closely attaching a mask to the package substrate without a complicated process with an expensive material such as a photoresist. It is possible to provide a package substrate for a light emitting diode manufactured by coating.
In addition, according to the light emitting diode package substrate and the manufacturing method thereof according to the present invention, the mask is placed on a curved package substrate, and the method is applied by vacuum deposition (Sputtering, Evaporation, CVD, etc.), electroplating or chemical plating. Since the side reflective layer can be formed by simply coating a metal material, it is possible to provide a light emitting diode package with improved light extraction efficiency and luminance reliability at low cost. Because light extraction efficiency is improved, less power may be used to achieve the same brightness, which reduces the amount of heat generated, thus facilitating the heat dissipation design of the entire system.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Reference will now be made in detail to the preferred embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to the like elements throughout. Like reference numerals in the drawings denote like elements.
1 is a perspective view of a light
Referring to FIG. 1, a light emitting
As can also be seen in FIG. 2, which shows a cross-sectional view between AB of FIG. 1, two metal electrodes formed to be electrically insulated from the bottom surface inside the opening of the
3 is a cross-sectional view between A-B of a package in which the light
As shown in FIG. 3, the light
Accordingly, the light emitting
4 is a view for explaining a manufacturing process of the
As shown in Figure 4, in order to manufacture the
As shown in FIG. 5, the
4 or 6, the lower surface of the mask is provided with a protruding portion 40, and the protruding portion 40 is formed on the bottom surface of the inside of the opening of the
As such, the process of forming the
TABLE 1
For example, first, in order to coat the
In some cases, a metal material, eg, on the exposed surface of the
Next, in order to coat the
In addition, when the
Meanwhile, in the case of the second coating method of Table 1, the
As another example, as in the third coating method of [Table 1], after coating the
In order to make the
As such, in the present invention, a
7 is a perspective view of a light emitting
8 is a perspective view of a light emitting
As shown in FIG. 8, in the
As described above, the present invention has been described by way of limited embodiments and drawings, but the present invention is not limited to the above embodiments, and those skilled in the art to which the present invention pertains various modifications and variations from such descriptions. This is possible. Therefore, the scope of the present invention should not be limited to the described embodiments, but should be determined not only by the claims below but also by the equivalents of the claims.
1 is a perspective view of a light emitting diode package substrate according to an embodiment of the present invention.
2 is a cross-sectional view taken along the line A-B of FIG.
3 is a cross-sectional view taken along line A-B of a package in which a light emitting diode chip is mounted on the package substrate of FIG. 1.
4 is a view for explaining a manufacturing process of the LED package substrate according to an embodiment of the present invention.
5 is a top view of a mask according to an embodiment of the present invention.
6 is a cross-sectional view of a mask according to an embodiment of the present invention.
7 is a perspective view of a light emitting diode package substrate according to another embodiment of the present invention.
8 is a perspective view of a light emitting diode package substrate according to another embodiment of the present invention.
Claims (17)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020090075307A KR100958329B1 (en) | 2009-08-14 | 2009-08-14 | Light emitting diode package substrate having side reflective surface coated with metals using mask and manufacturing method thereof |
PCT/KR2010/004644 WO2011019145A2 (en) | 2009-08-14 | 2010-07-16 | Light-emitting diode package substrate and method for manufacturing same employing a mask to form a metal coating on a reflective side surface of the light-emitting diode package substrate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020090075307A KR100958329B1 (en) | 2009-08-14 | 2009-08-14 | Light emitting diode package substrate having side reflective surface coated with metals using mask and manufacturing method thereof |
Publications (1)
Publication Number | Publication Date |
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KR100958329B1 true KR100958329B1 (en) | 2010-05-17 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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KR1020090075307A KR100958329B1 (en) | 2009-08-14 | 2009-08-14 | Light emitting diode package substrate having side reflective surface coated with metals using mask and manufacturing method thereof |
Country Status (2)
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KR (1) | KR100958329B1 (en) |
WO (1) | WO2011019145A2 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101253268B1 (en) | 2011-03-10 | 2013-04-10 | 한국기계연구원 | An Electroforming Master and Manufacturing Method thereof |
CN105428507A (en) * | 2015-11-20 | 2016-03-23 | 华天科技(昆山)电子有限公司 | Chip packaging structure and method |
KR102658589B1 (en) | 2023-08-14 | 2024-04-18 | 주식회사 동부엘이디 | High efficiency uv led package |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114300587B (en) * | 2021-12-29 | 2023-08-18 | 江苏第三代半导体研究院有限公司 | Preparation method of micro LED |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100643333B1 (en) | 2005-05-20 | 2006-11-10 | 럭스피아 주식회사 | Light emitting diode package having a reflector cup by metal thin film and its manufacturing method |
JP2007013067A (en) | 2005-07-04 | 2007-01-18 | Element Denshi:Kk | Method of manufacturing mounting substrate with reflector |
KR100834925B1 (en) * | 2006-12-22 | 2008-06-03 | (주) 아모센스 | Manufacturing method of semiconductor package |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7339198B2 (en) * | 2004-01-16 | 2008-03-04 | Yu-Nung Shen | Light-emitting diode chip package body and packaging method thereof |
JP4659421B2 (en) * | 2004-09-30 | 2011-03-30 | 株式会社トクヤマ | Manufacturing method of light emitting element storage package |
JP4981342B2 (en) * | 2006-04-04 | 2012-07-18 | 日立協和エンジニアリング株式会社 | Submount and manufacturing method thereof |
-
2009
- 2009-08-14 KR KR1020090075307A patent/KR100958329B1/en not_active IP Right Cessation
-
2010
- 2010-07-16 WO PCT/KR2010/004644 patent/WO2011019145A2/en active Application Filing
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100643333B1 (en) | 2005-05-20 | 2006-11-10 | 럭스피아 주식회사 | Light emitting diode package having a reflector cup by metal thin film and its manufacturing method |
JP2007013067A (en) | 2005-07-04 | 2007-01-18 | Element Denshi:Kk | Method of manufacturing mounting substrate with reflector |
KR100834925B1 (en) * | 2006-12-22 | 2008-06-03 | (주) 아모센스 | Manufacturing method of semiconductor package |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101253268B1 (en) | 2011-03-10 | 2013-04-10 | 한국기계연구원 | An Electroforming Master and Manufacturing Method thereof |
CN105428507A (en) * | 2015-11-20 | 2016-03-23 | 华天科技(昆山)电子有限公司 | Chip packaging structure and method |
KR102658589B1 (en) | 2023-08-14 | 2024-04-18 | 주식회사 동부엘이디 | High efficiency uv led package |
Also Published As
Publication number | Publication date |
---|---|
WO2011019145A2 (en) | 2011-02-17 |
WO2011019145A3 (en) | 2011-04-07 |
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