KR100956143B1 - Reflector capable of removing yellow ring and semiconductor package using the reflector - Google Patents

Abstract

Unlike the conventional method, we propose a reflector and a semiconductor package using the reflector to remove the yellow ring by processing the shape of the reflector. The reflecting plate presented is a reflecting plate which is buried in the upper part of the substrate having the cavity on which the light emitting element is mounted, and a hole having a size larger than the size of the light emitting element and smaller than the size of the cavity is formed in the center opposite to the upper surface of the light emitting element. The hole consists of a lower hole portion vertically penetrated and an upper hole portion formed obliquely above the lower hole portion. The reflection plate located on the upper part of the light emitting device constantly removes the light emitted from the side of the light emitting device, so that no yellow ring is generated.

Description

Reflector capable of removing yellow ring and semiconductor package using same

The present invention relates to a reflector and a semiconductor package using the same, and more particularly, to a reflector capable of removing a yellow ring and a semiconductor package employing the same.

Light emitting diodes (hereinafter, referred to as LEDs) are semiconductor devices capable of realizing various colors. The LED constitutes a light emitting source by changing compound semiconductor materials such as GaAs, AlGaAs, GaN, InGaN, and AlGaInP. At present, many such semiconductor devices have been adopted in the form of packages in electronic components.

Packaged semiconductor devices (ie, semiconductor packages) are now widely used as light sources in lighting fixtures such as flashlights and camera flashes.

However, when light is emitted to a subject using a luminaire employing a reflector or a lens, a yellow ring is generated along an edge of the light that is reflected. In the case of ordinary camera flash, the yellow ring generated when taking a picture is a major cause of deterioration of the picture quality.

The cause of the yellow ring generation will be described with reference to FIGS. 1 and 2 as follows. The semiconductor package of FIGS. 1 and 2 is a structure commonly used.

In the semiconductor package 1 of FIG. 1, an LED chip 14 is mounted in a cavity 12 of a ceramic substrate 10. Light from the LED chip 14 passes through the phosphor (not shown) in the cavity 12 and is emitted forward (upward). The semiconductor package 1 of FIG. 1 is a schematic structure, in which pattern electrodes, wires, and the like are omitted. The phosphor not shown is filled in the cavity 12.

In the case of the semiconductor package 1 of FIG. 1, light (eg, blue light) in the LED chip 14 is output as white light via a phosphor (eg, yellow) in the cavity 12.

Looking at the movement path until the light emitted from the LED chip 14 is converted to white, the movement path that is emitted after hitting the innermost wall of the cavity 12, such as (1) and the shortest distance (2) It is a considerably longer moving path than ①).

Until the light in the LED chip 14 passes completely through the phosphor in the cavity 12, there are movement paths of different lengths, such as? And?. It is orthodox that the yellow ring phenomenon occurs because of the difference in the length of the moving path, in particular, by having a longer moving path.

The semiconductor package of FIG. 2 has the same configuration as the semiconductor package of FIG. 1 except for the difference in the shape of the cavity. As shown in FIG. 2A, the thickness (width) of the phosphor layer 16 (that is, the inside of the cavity filled with the phosphor) that surrounds the LED chip 14 is equal to all the light of the LED chip 14. They are not uniform with respect to the emitting surface but are different. When a secondary reflector (that is, an external reflector installed on the front side (top) of the semiconductor package 20, although not shown in the drawing) is mounted, a yellow ring (YR) as shown in FIG. 2B or 3. ) Is generated. In FIGS. 2 and 3, reference numeral 20 denotes a semiconductor package used as a sample for experiments, and has a condition of 5050 size, 30 mils, and a directivity angle of 60 degrees. In Fig. 3, reference numeral 22 denotes a secondary reflector (external reflector).

Accordingly, as shown in FIG. 4, a flip chip type in which the phosphor layer 34 is coated with the same thickness on all surfaces of the flip chip 32 (LED chip) mounted on the base substrate 30. The semiconductor package of was presented. In the semiconductor package of FIG. 4, the thicknesses of the phosphor layer 34 coated on the top and side surfaces of the flip chip 32 are the same. The phosphor layer 34 is formed by a spray technique, a screen printing technique, a dipping technique, a stenciling technique, or the like. Here, the spray technique, the screen printing technique, and the dipping technique are easily understood by those skilled in the art, and thus, further description thereof will be omitted. Stenciling techniques can be found in US patent application Ser. No. 09/688053.

Since the lengths of the moving paths until the light emitted from the flip chip 32 passes through the phosphor layer 34 are the same, the yellow ring phenomenon is eliminated. Of course, as shown in FIG. 5, there may be a semiconductor package in which the phosphor layer 34 having a predetermined thickness is coated only on the upper surface of the flip chip 32. This is because most of the light emitted from the flip chip 32 is emitted through the light emitting surface of the upper surface. 5 is difficult to apply the phosphor layer 34 to the same thickness on all surfaces of the flip chip 32 (LED chip), so that the phosphor layer 34 is applied only to the upper surface, compared to the structure of FIG. Yellow ring removal rate is rather low.

Therefore, when the semiconductor package is constructed by adopting the structure as shown in FIG. 4, the yellow ring can be removed.

The semiconductor package of FIG. 4 is suitable for a structure in which the flip chip 32 is mounted on the base substrate 30 of the flat plate. As shown in FIGS. 1 and 2, the manufacturing process is fundamentally different from the structure in which the cavity is formed on the substrate 10 and the LED chip 14 is mounted in the cavity to be wire bonded. Very difficult to apply to the structure. That is, the structure of FIG. 4 is suitable for a semiconductor package using a flip chip type LED chip, but is difficult to apply to a stacked semiconductor package having a cavity as shown in FIGS. 1 and 2.

4, the phosphor layer 34 may be formed around the flip chip 32 using a spray technique, a screen printing technique, a dipping technique, a stencil technique, or the like. It is a very difficult process to apply the phosphor layer 34 uniformly to the chip 32.

In particular, the semiconductor package of FIG. 4 or FIG. 5 was applied to a luminaire using a lens (for example, a luminaire having a narrow orientation angle of about 10 degrees) and tested to confirm that a yellow ring was generated finely. .

Applicants have come to think of a structure and / or process that is conventionally difficult (ie, the method of uniformly applying the phosphor layer on the top surface or on all sides of the flip chip) so that anyone can easily access it.

Accordingly, Applicant has applied a yellow ring without applying the phosphor layer directly to the LED chip so that it is different from the conventional method (that is, the method of uniformly applying the phosphor layer on the top surface or all sides of the flip chip). I've been working on ways to get rid of). The present inventors have experimented with various semiconductor package structures under the judgment that the yellow ring can be removed by equalizing the moving distance of the light emitted from the light emitting element and passing through the phosphor layer, respectively. After experimenting with ink, I found that the yellow ring was removed. That is, it was found that the yellow ring can be removed by adjusting the passage area of the light passing through the phosphor layer. The applicant further confirmed that the yellow ring was removed even by using a reflector instead of black ink.

Accordingly, an object of the present invention is to process the shape of the reflecting plate unlike the conventional method so that the yellow ring can be easily removed.

In order to achieve the above object of the present invention, there is provided a reflecting plate capable of removing the yellow ring as in the following embodiment and a semiconductor package using the same.

In order to achieve the above object, the reflecting plate according to the preferred embodiment of the present invention is a reflecting plate placed on an upper portion of a substrate having a cavity in which a light emitting element is mounted.

A hole having a size larger than the size of the light emitting element and smaller than the size of the cavity is formed in a central portion opposite to the upper surface of the light emitting element, and the hole is an upper hole formed inclined from the upper side of the lower hole and the lower hole. It is composed.

On the other hand, a semiconductor package according to an embodiment of the present invention, a substrate having a cavity on which the light emitting element is mounted; And a reflecting plate formed on an upper portion of the substrate and opposed to an upper surface of the light emitting element, and having a hole having a size larger than the size of the light emitting element and smaller than the size of the cavity, the lower hole being vertically penetrated. And an upper hole portion formed obliquely above the lower hole portion.

In the above embodiments, the upper hole portion of the hole is formed round inwardly.

A reflective material layer is formed on the inner surface of the upper hole of the hole.

The reflective material layer comprises at least one of TiO ₂ , ZnO, Lithopone, ZnS, BaSO ₄ , SiO ₂ , PTFE (polytetrafluoroethylene).

The reflective material layer includes at least one of TiO ₂ , ZnO, lithopone, ZnS, BaSO ₄ , SiO ₂ , and PTFE (polytetrafluoroethylene) as a main material, and adds 5 to 60 wt% of the main material. In this case, the reflective material layer uses a component material having a silicone resin of 5 to 30 wt% and an epoxy resin of 20 to 65 wt% together with the main material.

A light scattering layer having a dome shape or a flat top shape may be further formed in the upper hole portion of the hole.

When the size of the light emitting element is 1.0 mm x 1.0 mm, the lower hole portion of the hole has a size of 1.1 mm x 1.1 mm to 1.8 mm x 1.8 mm.

According to the present invention having such a configuration, since the reflecting plate located on the upper portion of the light emitting device constantly removes the light emitted from the side of the light emitting device, there is no occurrence of a yellow ring.

In particular, even when the semiconductor package of the present invention is employed in a luminaire employing a separate lens having a narrow angle of view of about 10 degrees, yellow light is generated by scattering light in the light scattering layer formed in the upper hole of the hole of the reflector. Remove it.

In addition, as the amount of light is increased by the reflective material layer formed on the inner side of the upper hole of the hole of the reflector, the amount of light loss is minimized.

Hereinafter, a reflective plate and a semiconductor package using the same according to an embodiment of the present invention will be described with reference to the accompanying drawings. The semiconductor package to be described below is applicable to all SMD type packages such as ceramic packages, plastic packages, lead frame type packages, and plastic + lead frame type packages.

(First embodiment)

6 is a cross-sectional view illustrating a structure of a reflective plate that can remove a yellow ring and a semiconductor package using the same according to the first embodiment of the present invention.

In FIG. 6, the yellow plate removing reflective plate is denoted by reference numeral 50, and the semiconductor package using the yellow plate removing reflective plate 50 extends to the reflecting plate 50 and the substrate 40 under the reflecting plate 50. Include.

A cavity 42 is formed in the substrate 40 of the semiconductor package of the first embodiment. A light emitting element (LED chip) 44 is mounted in the center of the bottom surface of the cavity 42. The substrate 40 may be any substrate that can mount the light emitting element 44 at a high density. For example, alumina, quartz, calcium zirconate, forsterite, SiC, graphite, fusedsilica, mullite, cordierite, zirconia (zirconia), beryllia, aluminum nitride, low temperature co-fired ceramic (LTCC), high temperature co-fired ceramic (HTCC), plastics, metals, varistors, and the like.

The light emitting element 44 is electrically connected to an anode (not shown) and a cathode (not shown) by a wire 46. Although the anode and the cathode are not shown in FIG. 6, those skilled in the art can fully understand the present technology.

The phosphor layer 48 is formed inside the cavity 42. For example, assuming that the light emitting element 44 is a blue LED, the phosphor layer 48 is formed of a yellow phosphor.

The reflecting plate 50 is mounted on the substrate 40. The hole 54 is formed in the center part of the reflecting plate 50. The hole 54 is a passage through which the light passing through the phosphor layer 48 can go out. The hole 54 is composed of a lower hole 51 and an upper hole 52. Typically, the light emitting element 44 emits most of the light (about 80 to 90% of the light) to the upper surface, and emits some light (about 10 to 20% of the light) to the side except the upper surface. 1 and 2, since the yellow ring is ordinarily generated by the light emitted from the side of the light emitting device 44, in the first embodiment, only the light emitted from the upper surface of the light emitting device 44 is phosphor. It goes out through layer 48 and hole 54. To this end, in the first embodiment, by adjusting the light passage area that can exit the phosphor layer 48 with the holes 54 so that the lengths of the movement paths of the light passing through the phosphor layer 48 are equal to each other. The yellow ring is removed.

The reflective plate 50 is made of the same material as the substrate 40. Typically, since the light emitting device 44 is mounted at the center of the bottom surface of the cavity 42, the hole 54 of the reflecting plate 50 is preferably formed at the center of the light emitting device 44 opposite to the top surface of the light emitting device 44.

The lower hole 51 of the hole 54 of the reflecting plate 50 has a size slightly larger than that of the light emitting element 44. This is to remove the light emitted from the side of the light emitting device 44 and to pass through the lower hole 51 so that all the light emitted from the light emitting device 44 is emitted from the upper surface. For example, when the size of the light emitting element 44 is 1.0 mm x 1.0 mm, the size of the lower hole 51 is about 1.1 mm x 1.1 mm-1.8 mm x 1.8 mm. If the size of the lower hole 51 is too large, there is no effect of removing the yellow ring. Therefore, the size of the lower hole 51 must be appropriately adjusted according to the size of the light emitting element 44. The upper hole 52 is rounded inwardly to have a diameter that decreases downward when viewed from the top. That is, the width of the lower hole 51 and the lower diameter of the upper hole 52 are equal to each other and larger than the width of the light emitting element 44. If the light emitting element 44 has a rectangular chip shape, the lower hole portion 51 is formed in a quadrangle shape, and the bottom portion of the upper hole portion 52 (that is, the portion that contacts the upper surface of the lower hole portion 51) has a square shape. The upper portion of the upper hole 52 is formed in a circular shape. Here, the method of forming the hole 54 is easily understood by those skilled in the art using a well-known technique and will not be described separately.

When the reflecting plate 50 is positioned on the upper portion of the substrate 40 configured as described above and then coupled, the light emitted from the light emitting element 44 is as if the light emitted from the upper surface is the phosphor layer 48 and the lower hole 51. Through) to the upper hole 52. As a result, the light passing through the phosphor layer 48 to the outside is equal in length to each other so that no yellow ring is generated. That is, the blue ray emitted from the light emitting element 44 is converted into white ray through the phosphor layer 48, wherein the light causing the yellow ring is generated among the light emitted from the light emitting element 44. (I.e., light emitted from the side) is removed, so that no yellow ring is generated.

Of course, in order to more completely remove the yellow ring, as shown in FIG. 6, the light scattering layer 56 formed by dome-shaped transparent silicon (or epoxy) is formed in the upper hole 52. When the semiconductor package of the first embodiment (that is, the structure without the light scattering layer 56) is used for a luminaire that does not use a lens, there is no occurrence of a yellow ring. However, some yellow rings were generated when the semiconductor package of the first embodiment (that is, the structure without the light scattering layer 56) was used for a luminaire using a lens having a direction angle of about 10 to 30 degrees. Therefore, when the dome-shaped light scattering layer 56 is further formed, the yellow ring component of the white light passing through the lower hole 51 is scattered by the light scattering layer 56 of the upper hole 52. Is removed by

(Second embodiment)

7 is a cross-sectional view illustrating a structure of a reflective plate that can remove a yellow ring and a semiconductor package using the same according to a second embodiment of the present invention.

Most of the components of the second embodiment are the same as those of the first embodiment described above. Accordingly, the same reference numerals are given to the same components as those of the first embodiment among the components of the second embodiment, and description thereof will be omitted.

In the first embodiment, the dome-shaped light scattering layer 56 is employed. In the second embodiment, the top surface of the light scattering layer 58 is flattened. In the first embodiment, the light scattering layer 56 is formed of transparent silicon or epoxy, but the light scattering layer 58 of the second embodiment is formed using a diffuser as a main material. In the light scattering layer 58, for example, a diffuser of Al ₂ O ₃ and silicon (or epoxy) are blended in a predetermined compounding ratio. Since there may be a change in optical characteristics according to the blending ratio of the diffuser, the range for the blending ratio of the diffuser may be determined in consideration of the optical characteristics. In practice the diffuser has a cross section, for example a star or a cogwheel. In the light scattering layer 58, light scattering by the diffuser occurs a lot and the yellow ring component is removed.

8 is a flowchart illustrating a process of manufacturing the semiconductor package of the first or second embodiment of the present invention. The following manufacturing process assumes the manufacture of the semiconductor package of the first embodiment. Since the process of manufacturing the semiconductor package of the second embodiment is not so different compared to the following manufacturing process, those skilled in the art can fully grasp the following description even if there is no separate description.

First, after preparing the board | substrate 40 in which the cavity 42 was formed, the light emitting element 44 is mounted on the bottom surface of the cavity 42 (refer FIG. 8 (a)).

Then, the wire 46 is used to electrically connect the light emitting element 44 to the cathode (not shown) and the anode (not shown) (see FIG. 8B).

Then, the phosphor is dispensed into the cavity 42 to form the phosphor layer 48 (see FIG. 8C).

And the reflecting plate 50 is prepared (refer FIG. 8 (d)). The reflective plate 50 has a hole 54 formed in the center thereof. In the present specification, the hole 54 is represented, but may be a cavity. The hole 54 is composed of a lower hole 51 having a constant size and an upper hole 52 rounded inward as described above. Here, the reflective material layer 55 having a high reflectance may be formed on the inner surface of the upper hole 52 to increase the amount of light. Since the semiconductor package of the embodiment of the present invention has a smaller size of the bottom opening of the reflective member in contact with the phosphor layer, the amount of light will also be smaller than that of the conventional semiconductor package. Therefore, in order to minimize the amount of light loss compared to the existing, it is more preferable to form the reflective material layer 55. When the reflective material layer 55 is formed, the reflective material layer 55 has a thermosetting property. For example, the reflective material layer 55 uses a material having a reflectance of 90% or more (see Table 1 below).

Table 1

            material           content Titanium dioxide, Zinc Oxide, Lithopone (BaSO ₂ + ZnS) ZnS, BaSO ₄ , SiO ₂ , PTFE (polytetrafluoroethylene)           5 to 60 wt%    Silicone Resin        5 to 30% by weight   Additives such as solvents, epoxy resins, etc.        20 to 65 wt%

In Table 1, white TiO ₂ , ZnO, lithopone, ZnS, BaSO ₄ , PTFE (polytetrafluoroethylene) and the like were used as materials having good reflectance. Of course, if necessary, is also possible to use other materials instead of additional other materials may be used, for example, ZnS, BaSO _4, PTFE (polytetrafluoroethylene). Silicone resins and epoxy resins were used for the viscosity and tack. In Table 1, TiO ₂ , ZnO, lithopone, ZnS, BaSO ₄ , SiO ₂ , PTFE (polytetrafluoroethylene), etc. are used as the main material having excellent reflectance and whiteness, silicone resin and epoxy resin. Etc. become a subsidiary material. In Table 1, the use of TiO ₂ , ZnO, lithopone, ZnS, BaSO ₄ , SiO ₂ , PTFE (polytetrafluoroethylene) at less than 5% by weight is difficult to achieve white. When TiO ₂ , ZnO, Lithopone (Lithopone), ZnS, BaSO ₄ , SiO ₂ , and PTFE (polytetrafluoroethylene) are used in excess of 60% by weight, the amount of addition of silicone resin and epoxy resin is reduced and the desired viscosity and Hard to get adhesiveness If the silicone resin is used at less than 5% by weight, the viscosity becomes too low. When the silicone resin is used in excess of 30% by weight, the viscosity becomes too high. When the epoxy resin is used in less than 20% by weight, the adhesive strength is weakened. When the epoxy resin is used in excess of 65% by weight, the content of TiO ₂ , ZnO, lithopone, ZnS, BaSO ₄ , SiO ₂ , PTFE (polytetrafluoroethylene) or silicone resin is insufficient, resulting in white color. This makes it difficult to achieve the desired viscosity.

In order to increase the amount of light, the reflective material layer 55 was white. Implementing in white results in less light absorption than black. The visible light region is formed by forming the reflective material layer 55 by selecting TiO ₂ , ZnO, lithopone, ZnS, BaSO ₄ , SiO ₂ , PTFE (polytetrafluoroethylene) and the like having low light absorption and good reflectance. In addition to almost no light absorption in the light source, the light emitted from the light emitting element 44 is almost reflected, thereby improving light efficiency (light quantity).

Here, the process of manufacturing the reflector 50 is described as if the process is performed after FIG. 8C, but in practice, the process of manufacturing the reflector 50 and the process of manufacturing the reflector 50. Can be done on different lines at the same time.

Subsequently, as shown in FIG. 8E, the reflector 50 is placed on the completed substrate 40 and then coupled to each other.

Then, after dispensing the silicon or diffuser 57 in the lower hole 51 of the reflecting plate 50 as shown in FIG. 8 (f), the reflecting plate 50 of FIG. Silicon is dispensed into the upper hole 52 to form a dome-shaped light scattering layer 56.

In the semiconductor package manufactured as described above, since the reflective plate 50 positioned on the upper portion of the light emitting device 44 removes light emitted from the side surface of the light emitting device 44 constantly, there is no occurrence of a yellow ring.

In addition, the amount of light loss is minimized by the reflective material layer 55 formed on the inner surface of the upper hole 52 of the hole 54.

Hereinafter, a description will be made by comparing the semiconductor package of the present invention with the conventional semiconductor package.

FIG. 9 illustrates a case where a typical semiconductor package (the semiconductor package of FIG. 2) in which a light emitting element is mounted in a cavity of a substrate and a phosphor is filled in the cavity is used. It can be seen that a yellow ring occurs when a typical semiconductor package is employed in a luminaire using a separate metal reflector as shown in FIG. 9 (a). In addition, it can be seen that the yellow ring occurs even when employed in a luminaire using a separate lens having a narrow orientation angle as shown in FIGS. 9 (b), 9 (c) and 9 (d). The lens of FIG. 9B has an orientation angle of approximately 30 degrees to 40 degrees, the lens of FIG. 9C has an orientation angle of approximately 25 degrees, and the lens of FIG. It has an orientation angle of about 10 degrees. 9, it can be seen that the narrower the angle of incidence of the lens, the higher the yellow ring occurrence rate.

10 is a case using a conventional LED package of another company. When a conventional LED package of another company is employed in a luminaire using a separate metal reflector as shown in FIG. 10 (a), no yellow ring is generated. Also, even when employed in a luminaire using a separate lens having a narrow orientation angle as shown in FIGS. 10B and 10C, no yellow ring was generated. The lens of FIG. 10B has a direction angle of about 30 degrees to 40 degrees, and the lens of FIG. 10C has a direction angle of about 25 degrees. However, it can be seen that the yellow ring occurs when the luminaire employing a separate lens having a directing angle of about 10 degrees as shown in FIG. 10 (d).

11 is a case using a conventional LED package of another company. When a conventional LED package of another company is employed in a luminaire using a separate metal reflector as shown in (a) of FIG. 11, no yellow ring is generated. In addition, even when employed in a luminaire using a separate lens having a narrow orientation angle as shown in Figs. 11 (b) and 11 (c), no yellow ring was generated. The lens of FIG. 11B has a directing angle of approximately 30 degrees to 40 degrees, and the lens of FIG. 11C has a directing angle of approximately 25 degrees. However, it can be seen that the yellow ring occurs when the luminaire employing a separate lens having a directing angle of about 10 degrees as shown in FIG. 11 (d).

FIG. 12 illustrates a case in which the reflecting plate 50 of the present invention is mounted on and bonded to the upper portion of the substrate 40. For example, the phosphor layer 48 is formed in the cavity 42 of FIG. 6, and the hole 54 of the reflecting plate 50 is formed. Is a case where a semiconductor package filled with transparent silicon is used for the lower hole 51 in FIG. 6. Yellow ring was not generated when it was adopted. Also, even when the semiconductor package illustrated based on FIG. 6 is employed in a luminaire using a separate lens having a narrow orientation angle as shown in FIGS. 12B and 12C, no yellow ring is generated. The lens of FIG. 12B has a direction angle of approximately 30 degrees to 40 degrees, and the lens of FIG. 12C has a direction angle of approximately 25 degrees. Here, an exemplary semiconductor package (ie, a semiconductor package in which the phosphor layer 48 is formed in the cavity 42 of FIG. 6 and the transparent silicon is filled in the lower hole 51 in the hole 54 of the reflecting plate 50) When applied to a luminaire employing a separate lens having a directing angle of about 10 degrees, the yellow ring is minutely generated. In this case, therefore, it is preferable to form the light scattering layer 56 or 58 in the upper hole 52.

In the case of FIG. 12, the reflecting plate 50 on the light emitting device 44 serves to uniformly remove the light emitted from the side surface of the light emitting device 44 so that the yellow ring is not generated.

FIG. 13 illustrates a case in which the reflecting plate 50 of the present invention is mounted on the upper portion of the substrate 40 and bonded. For example, as shown in FIG. 7, the phosphor layer 48 is formed in the cavity 42 and the lower side of the reflecting plate 50. This is the case where the semiconductor package in which the diffuser is dispensed is used for the hole 51 and the upper hole 52. When the semiconductor package illustrated based on FIG. 7 is employed in a luminaire using a separate metal reflector as shown in FIG. 13A, a yellow ring does not occur. In addition, even when the semiconductor package illustrated on the basis of FIG. 7 is employed in a luminaire using a separate lens having a narrow orientation angle as shown in FIGS. 13B, 13C, and 13D, a yellow ring is generated. It wasn't. The lens of FIG. 13B has an orientation angle of approximately 30 degrees to 40 degrees, the lens of FIG. 13C has an orientation angle of approximately 25 degrees, and the lens of FIG. It has an orientation angle of about 10 degrees.

In the case of FIG. 13, the reflective plate 50 serves to uniformly remove the light emitted from the side of the light emitting device 44 on the light emitting device 44 so that the yellow ring is not generated. In addition, light is scattered in the light scattering layer 58 having a flat top surface to eliminate yellow ring generation.

FIG. 14 illustrates a case in which the reflecting plate 50 of the present invention is mounted on the upper portion of the substrate 40 and bonded. For example, as shown in FIG. 6, the phosphor layer 48 is formed in the cavity 42 and the lower side of the reflecting plate 50. The semiconductor package in which the diffuser or transparent silicon is dispensed in the hole 51 and the transparent silicon is dispensed in the dome shape in the upper hole 52 is used to form the light scattering layer 56. When the semiconductor package illustrated on the basis of FIG. 6 is employed in a luminaire using a separate metal reflector as shown in FIG. 14A, no yellow ring is generated. In addition, a yellow ring is generated even when the semiconductor package illustrated on the basis of FIG. 6 is employed in a luminaire using a separate lens having a narrow orientation angle as shown in FIGS. 14B, 14C, and 14D. It wasn't. The lens of FIG. 14B has an orientation angle of about 30 degrees to 40 degrees, the lens of FIG. 14C has an orientation angle of about 25 degrees, and the lens of FIG. It has an orientation angle of about 10 degrees.

In the case of FIG. 14, the reflecting plate 50 on the light emitting device 44 serves to uniformly remove the light emitted from the side surface of the light emitting device 44 so that the yellow ring is not generated. In addition, light is scattered in the dome-shaped light scattering layer 56 to eliminate yellow ring generation.

In particular, when the LED package of another company is employed in a luminaire using a lens having a directivity of about 10 degrees, as a result of the experiment, not only a yellow ring but also a blue ring phenomenon was detected. When the semiconductor package according to the embodiment was applied to a luminaire using a lens having a direction of about 10 degrees, it was found that not only a yellow ring but also a blue ring phenomenon did not occur.

15 is a table showing the results of experiments by placing the reflector 50 of the present invention on top of a conventional 1W power chip. As a result of experiment by placing the reflective plate 50 of the present invention on top of a conventional 1W power chip, the yellow ring was not generated as in the case of FIGS. 12 to 14 described above. However, the total light amount (TLF) is about 10% compared to the existing, it can be seen that the coupling of the reflector 50 of the present invention to the existing substrate structure is very efficient in that the yellow ring does not occur.

In the color coordinate data (chrom x and chrom y) in the table of FIG. 15, when the deviation between the minimum value MIN and the maximum value MAX is chrom x, respectively, it is approximately "0.038 (0.340-0.302)" and chrom. In the case of y, it is approximately "0.059 (0.344-0.285)". As described above, since the deviation between the minimum and maximum values of the color coordinate data is extremely small, the color coordinate scattering is also narrowed (that is, the color coordinate scattering is stable), and thus the occurrence rate of the product to be treated as an external product is very low.

On the other hand, the present invention is not limited only to the above-described embodiment, but can be modified and modified within the scope not departing from the gist of the present invention, the technical idea to which such modifications and variations are also applied to the claims Must see

1 is a schematic structural diagram of a semiconductor package employed to explain a conventional yellow band phenomenon.

2 and 3 are views illustrating a conventional yellow band phenomenon on the basis of a sample.

4 is a schematic structural diagram of a conventional semiconductor package proposed to remove a yellow band phenomenon.

5 is a schematic structural diagram of another conventional semiconductor package proposed to remove the yellow band phenomenon.

6 is a cross-sectional view for describing the configuration of a reflector and a semiconductor package using the same according to the first embodiment of the present invention.

7 is a cross-sectional view for describing a configuration of a reflector and a semiconductor package using the same according to the second embodiment of the present invention.

8 is a flowchart illustrating a manufacturing process of a reflective plate and a semiconductor package using the same according to the first or second embodiment of the present invention.

9 to 14 are photographs illustrating the comparison between the semiconductor package of the present invention and the conventional semiconductor package, and FIGS. 9 to 11 are photographs showing yellow ring generation when the conventional semiconductor package is employed in a lighting device. 12 to 14 are photographs showing that the yellow ring is not generated when the semiconductor package of the present invention is employed in a luminaire.

Fig. 15 is a table showing the results of experiments in which the reflector of the present invention was placed on a conventional 1W power chip.

Claims (17)

A reflector is placed on top of a substrate having a cavity in which a light emitting element is mounted. A hole having a size larger than the size of the light emitting device and smaller than the size of the cavity is formed in a central portion facing the upper surface of the light emitting device, wherein the hole is formed at the upper side of the lower hole and the lower hole. Reflector, characterized in that consisting of the upper hole formed inclined. The method according to claim 1, The upper hole of the hole is a reflection plate, characterized in that formed inwardly rounded. The method according to claim 1, A reflective plate, characterized in that the reflective material layer is formed on the inner surface of the upper hole of the hole. The method according to claim 3, The reflective material layer is a reflector comprising at least one of TiO ₂ , ZnO, lithopone, ZnS, BaSO ₄ , SiO ₂ , PTFE (polytetrafluoroethylene). The method according to claim 3, The reflective material layer includes at least one of TiO ₂ , ZnO, lithopone, ZnS, BaSO ₄ , SiO ₂ , and PTFE (polytetrafluoroethylene) as a main material, and the main material is added at 5 to 60 wt%. Reflector. The method according to claim 5, The reflecting material layer is a reflector, characterized in that the use of a subsidiary material with a silicone resin of 5 ~ 30wt% and an epoxy resin of 20 ~ 65wt% with the main material. The method according to any one of claims 1 to 6, The upper plate of the hole is a reflector, characterized in that the light scattering layer of the dome shape or the top shape is further formed. The method according to claim 7, When the size of the light emitting element is 1.0mm × 1.0mm, the lower hole portion of the hole has a size of 1.1mm × 1.1mm ~ 1.8mm × 1.8mm. A substrate having a cavity in which a light emitting element is mounted; And A reflection plate formed on an upper portion of the substrate, the hole having a size larger than the size of the light emitting element and smaller than the size of the cavity, the center portion facing the top surface of the light emitting element; The hole is a semiconductor package, characterized in that consisting of the lower hole portion vertically penetrated and the upper hole portion formed inclined above the lower hole portion. The method according to claim 9, And the upper hole portion of the hole is rounded inwardly. The method according to claim 9, And a reflective material layer formed on an inner surface of the upper hole of the hole. The method according to claim 11, The reflector layer comprises at least one of TiO ₂ , ZnO, lithopone, ZnS, BaSO ₄ , SiO ₂ , PTFE (polytetrafluoroethylene). The method according to claim 11, The reflective material layer includes at least one of TiO ₂ , ZnO, lithopone, ZnS, BaSO ₄ , SiO ₂ , and PTFE (polytetrafluoroethylene) as a main material, and the main material is added at 5 to 60 wt%. Semiconductor package. The method according to claim 13, The reflective material layer is a semiconductor package, characterized in that the use of a subsidiary material having a silicon resin of 5 to 30wt% and an epoxy resin of 20 to 65wt% with the main material. The method according to any one of claims 9 to 14, And a light scattering layer having a dome shape or a flat top shape in the upper hole portion of the hole. The method according to claim 15, And the lower hole of the hole has a size of 1.1 mm x 1.1 mm to 1.8 mm x 1.8 mm when the size of the light emitting element is 1.0 mm x 1.0 mm. The method according to claim 15, And a phosphor layer is formed in the cavity.

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