KR100953560B1 - Apparatus for supporting test of terahertz device - Google Patents

Abstract

The present invention relates to a test support apparatus for terahertz wave devices, comprising: a support for fixing a device substrate on which a terahertz wave device to be tested is mounted; A bracket positioned on the support and opened and closed in a folder manner; And a probe substrate fixedly disposed on the bracket, the probe substrate having probe pins electrically connected to the terahertz wave element in contact with the element substrate when the bracket is in a closed state. It makes it easy to run tests and reuse them after they run.

Terahertzpa, test

Description

Apparatus for supporting test of terahertz device}

The present invention relates to a test support apparatus for terahertz wave devices, and more particularly, to a test support apparatus for terahertz wave devices for enabling easier and simpler testing of terahertz wave devices.

The present invention is derived from the research conducted as part of the IT source technology development project of the Ministry of Information and Communication and the Ministry of Information and Communication Research and Development. And signal source technology development].

Terahertz (THz) waves are electromagnetic waves with a frequency in the range of 0.1 to 10 terahertz waves lying between microwaves and infrared light, and are located between conventional radio and light domains. This area is known as one of the most inaccessible areas of the electromagnetic spectrum because it belongs to the technical limits of radio and optical technologies.

However, with the commercialization of femtosecond lasers, the development of materials technology and the development of ultra-fine process technologies have led to the emergence of high-power terahertz wave sources, which marked the development of this field.

As a result, there is a growing interest in terahertz waves all over the world, because of the nature of terahertz waves, they are likely to be used in various applications in the future.

The unique characteristics of terahertzpa spectroscopy and imaging technology make it an attractive area of research that is of interest to many high value-added services and high-tech industries such as new materials, healthcare, biotechnology, security, defense, environment, space and communications. Growing.

In addition, it is expected that the applicability and ripple effect will be significant in the future even if advanced countries include terahertz wave-related technologies as one of the important future technologies.

The terahertz waves can be divided into continuous and pulse types according to their generation method.The terahertz waves generated by the femtosecond laser belong to the pulse type and are short pulses of picoseconds. (10) It is possible to obtain an electromagnetic wave having an ultra-wide frequency of up to terahertz wave.

The generation of such pulsed terahertz waves is mainly performed by a photoconductive antenna (PCA), an optical rectification (OR), and a surface-field of semiconductor.

1 is a diagram illustrating a concept of generation of terahertz waves using a photoconductive antenna.

As shown in FIG. 1, the photoconductive antenna deposits a photoconductive thin film 11 on a semi-insulating GaAs substrate 10, and again a metal parallel transmission line having a central projecting portion (electrode diagram). And (12).

The portion protruding in the central region of the metal parallel transmission line 12 acts as a small dipole antenna.

Intermittent excitation using a laser pulsed light (fs) having a time width of 100 femtoseconds or less with a bias voltage (Vb) applied to the metal parallel transmission line 12 causes carriers (electrons and holes) by light absorption. ) Is instantaneously flowed through the metal parallel transmission line 12, and a terahertz wave (dipole radiation) is generated which is proportional to the time derivative of this current.

In other words,

Where E is a radiated electric field at a distance (direction), i (t) is a photoconductive current, and P (t) is polarization.

Terahertz waves are strongly radiated from the substrate surface with high dielectric constant. The pulse width of the emitted terahertz wave is 1ps or less, and when optically excited using a laser pulse of ~ 30 fs or more, the spectrum obtained by Fourier transform has a broad spectrum from 0 to several terahertz waves. .

The spacing of the small dipole antennas is 5 μm, which is small enough for the wavelength of terahertz waves radiated at hundreds of μm, so that when the current excited by the light pulses flows, the carriers are considered to move in the same phase in a group. Radiation.

When terahertz waves are emitted from the semiconductor surface as described above, the current is generated instantaneously by the built-in electric field present on the semiconductor surface, and the optical denver effect in which the excited charges move to diffusion. There is a case, which varies depending on the semiconductor material and the excitation conditions.

However, in order to radiate electromagnetic waves on the surface of the semiconductor as described above, a high-precision alignment technique must be accompanied, which is a fundamental necessity of the present invention.

FIG. 2 is a front view of a terahertz wave element using a conventional photoconductive antenna. Referring to FIG. 2, the terahertz wave element 20 is formed of a photoconductive antenna type metal pattern 21 patterned on a GA / AS substrate. It can be seen that it is formed through the electrode pads 22 formed at both ends of the metal pattern 21.

Accordingly, the terahertz wave device of FIG. 2 generates a terahertz wave THz by emitting laser pulsed light fs of 100 femtoseconds or less as described above, and radiates to the outside.

However, the terahertz wave device configured as described above was not packaged as a complete device, and in order to test the characteristics of the device, the terahertz wave device had to be electrically or mechanically coupled to the test system by performing a conductive adhesive or an indium bonding directly on the terahertz wave device. That is, the power supply to which the high field is applied and the wire connected to the contactor of the test system had to be integratedly connected to the metal pattern 21 of the terahertz wave element.

As a result, it was very cumbersome and difficult to test the characteristics of terahertz wave devices.

In addition, after the test is completed, the signal lines bonded through the conductive adhesive or the indium junction must be removed again, so that there is a problem that the alignment of the device is disturbed and contaminated and cannot be reused.

Accordingly, the present invention provides a test support apparatus for terahertz wave devices that can be used to test the terahertz wave devices more easily and conveniently and to be reused after testing.

According to an aspect of the present invention as a means for solving the above problems, a support for fixing a device substrate mounted with a terahertz wave device to be tested; A bracket positioned on the support and opened and closed in a folder manner; And a probe substrate fixedly disposed on the bracket, the probe substrate having probe pins electrically connected to the terahertz wave element in contact with the element substrate when the bracket is in a closed state. To provide.

And the support is implemented in the form of a plate opening the central region, both sides of the support plate for converging the element substrate; And a ball plunger installed at an outer region of the support plate to support the support plate from the air and fixing the position of the device substrate.

The bracket may include a lower bracket that is formed in a "c" shape in which an area corresponding to the opening area of the support plate is opened and a front side of the bracket is opened to allow the device substrate to be inserted or removed; And an upper bracket configured to open an area corresponding to the opening area of the support plate, the rear side of which is rotated a predetermined angle with respect to the rear side of the lower bracket after the rear side of the lower bracket is coupled.

At this time, the lower bracket is disposed on the upper side of both sides of the lower bracket fixing magnet for uniformly adjusting the coupling pressure with the upper bracket; An opening button disposed on both sides of the lower bracket to induce opening and closing of the upper bracket; And an upper bracket coupling hole formed at a rear side of the lower bracket to induce coupling with the upper bracket.

And the upper bracket is disposed on the lower side of both sides of the upper bracket fixing magnet for uniformly adjusting the coupling pressure with the lower bracket; And a lower bracket coupling shaft formed through the rear surface of the upper bracket so that a rotation shaft coupled to the upper bracket coupling hole of the lower bracket can be inserted therein.

The probe substrate is a substrate; First probe pins fixedly disposed on the substrate to be electrically connected to second contact pads of the device substrate; Second probe pins fixedly disposed on the substrate such that the external terminals can be coupled; And a signal line patterned on the substrate to electrically connect the first and second probe pins.

The device substrate may further include a stacked board having a position corresponding to an area in which the terahertz wave element receives laser pulse light or emits terahertz wave; First contact pads formed on the stacked board to have positions corresponding to the contact terminals of the terahertz wave element; Second contact pads formed on the stacked board to have positions corresponding to probe pins of the probe substrate; And a signal line patterned on the stacked board to electrically connect the first contact pads and the second contact pads.

As described above, the test support apparatus of the terahertz wave device of the present invention includes probe pins connected to the terahertz wave device, and an external terminal connected to the test system can be coupled thereto, thereby providing a separate conductive adhesive or indium bonding operation. Without it, an external test system can test the operating characteristics of terahertz wave devices.

Therefore, the test support apparatus of the terahertz wave device of the present invention not only makes the test of the terahertz wave device easier and more convenient, but also supports re-use after the test.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, in describing in detail the operating principle of the preferred embodiment of the present invention, if it is determined that the detailed description of the related known function or configuration may unnecessarily obscure the subject matter of the present invention, the detailed description thereof will be omitted.

In addition, the same reference numerals are used for parts having similar functions and functions throughout the drawings.

3 and 4 are perspective and exploded views showing a test support apparatus for a terahertz wave device according to an embodiment of the present invention.

3 and 4, the test apparatus of the present invention is located on the support 31, the support 31 for supporting the element substrate 40 mounted with the terahertz wave element 20 to be tested Lower bracket 32 to fix the substrate 40, the upper side bracket 33, one side is coupled to the lower bracket 32 to open and close in a fold manner based on one side coupled to the lower bracket 32, the upper bracket The first and second probe pins 35-1 fixedly disposed on the 33 and electrically connected to the terahertz wave element 20 by contacting the element substrate 40 when the upper bracket 33 is closed. And a probe substrate 34 having 35-2.

In this case, the predetermined probe pins 35 fixedly disposed on the probe substrate 34 may be coupled to an external terminal 50 connected to an external test system.

That is, the external test system is electrically connected to the terahertz wave element 20 to be tested by coupling the external terminal 50 connected thereto to the second probe pin 35-2 fixedly disposed on the probe substrate 34. Is connected.

Therefore, in the test support apparatus of the terahertz wave device of the present invention, the test system is electrically connected to the terahertz wave device 20 using only the external terminal 50 without a separate conductive adhesive or indium bonding operation to test device characteristics. To help.

5 is a perspective view for explaining the structure of a device substrate according to an embodiment of the present invention.

Referring to FIG. 5, a stacked board 41 and a terahertz wave element 20 having a position corresponding to an area where a terahertz wave element 20 to be tested receives a laser pulse light or emits a terahertz wave are opened. The first contact pads 42 formed on the stacked board 41 to have a position corresponding to the contact terminal, and the stacked board 41 to have a position corresponding to the probe pins 35 of the probe substrate 34. The formed second contact pads 43, the signal lines 44 patterned on the stacked board 41 to electrically connect between the first contact pads 42 and the second contact pads 43 are included.

In addition, a plurality of ball plunger fastening holes 45 are formed in the outer region of the device substrate 40, and the device substrates (not shown) are formed by a ball plunger (not shown) of the support 31 which is later fastened to the ball plunger fastening holes 45. 40) can be fixed without flow.

As such, the device substrate 40 may include a first contact pad 42 in electrical contact with the terahertz wave element 20 and a second contact pad in contact with the probe pins 35 of the probe substrate 34. 43) and connect them to the signal line 44.

When the terahertz wave element 20 is mounted and the contact terminals of the terahertz wave element 20 are in contact with the first contact pads 42, the second contact pads 43 also have the terahertz wave element 20. Is electrically connected to the

As a result, the probe pin 35 of the probe substrate 34 may be electrically connected to the terahertz wave element 20 by contacting the second contact pads 43.

Figure 6 is a perspective view for explaining the structure of the support according to an embodiment of the present invention.

Referring to FIG. 6, the support 31 is implemented in the form of a plate in which a central region is opened, and the support plate 31-1 having the grooves 31-11 converging the device substrate 40 on the inner side of both sides thereof; It supports the support plate 31-1 from the air, and includes the ball plungers 31-2 provided in the outer region of the support plate 31-1.

In addition, lower bracket fastening holes 31-12 for inducing coupling with the lower bracket 32 may be further formed in the outer region of the support plate 31-1.

At this time, the ball plunger (31-2) is provided with a compression spring in the groove portion of the plunger body, the ball is installed in the compression spring, the ball is fastened to the ball plunger fastening hole 45 of the element substrate 40 The position of the element substrate 40 is fixed.

7A and 7B are perspective views illustrating the structure of upper and lower brackets according to an embodiment of the present invention.

7A and 7B, the lower bracket 32 has a “c” shape in which an area corresponding to the opening area of the support 31 is opened and the front side is opened to allow the element substrate 40 to be inserted or removed. Is implemented. In addition, the upper bracket 33 is implemented such that an area corresponding to the opening area of the support 31 is opened, and after the rear side of the upper bracket 33 and the rear side of the lower bracket 32 are combined, the lower bracket 32 It is rotated by a predetermined angle with respect to the rear side of the.

More specifically, the fixing magnet 32-1 disposed on the upper side of both sides of the lower bracket 32 to uniformly adjust the coupling pressure with the upper bracket 33, and the upper side of the both side surfaces of the lower bracket 32. And an opening button 32-2 for inducing opening and closing of the upper bracket 33 and an upper bracket coupling hole 32-3 formed at the rear side of the lower bracket 32 to induce coupling with the upper bracket 33. And a support fastening hole 32-4 formed at a position corresponding to the lower bracket fastening holes 31-12 of the support 31 to guide the fastening with the support 31.

At this time, the open button 32-2 is arranged to be positioned on the upper side of one of the two sides of the lower bracket 32 to open and close the upper bracket 33 coupled to the upper portion of the lower bracket 32 through the lever principle. .

The upper bracket 33 is disposed below both sides of the upper bracket 33 to fix the bonding pressure with the lower bracket 32 uniformly (not shown), the upper bracket engaging hole of the lower bracket 32 It includes a lower bracket coupling shaft 33-2 formed through the rear side of the upper bracket 33 so that the rotation shaft 36 coupled to the (32-3) can be inserted.

At this time, the fixing seat of the upper bracket 33 and the fixing seat magnet 32-1 of the lower bracket 32, which are disposed at positions corresponding to each other and coupled to each other when the upper bracket 33 is closed, are complementary to each other. The upper bracket 33 in the closed state has a constant pressure on the lower bracket 32 so that the lower bracket 32 can be combined with the lower bracket 32.

This is to allow the probe pins fixed to the probe substrate 34 mounted on the upper bracket 33 to be in contact with the contact pad 42 of the device substrate 40 at a constant pressure.

One side of the lower bracket 32 and the upper bracket 33 having such a structure is coupled to one side is opened and closed in a folder method, the electrical terminal between the external terminal 50 and the terahertz wave element 20 coupled to the probe substrate 34 To be connected.

For example, when testing the terahertz wave element 20, the upper bracket 33 is closed to couple the upper bracket 33 to the lower bracket 32, and thus the probe substrate fixedly disposed on the upper bracket 33. The first probe pins 35 of 34 may be in contact with the second contact pad 43 of the device substrate 40 on which the terahertz wave element 20 is mounted.

Then, the test system is electrically connected to the terahertz wave element 20 by coupling the external terminal 50 connected thereto to the second probe pin 35-2 electrically connected to the first probe pins 35-1. It is possible to test the characteristics of the terahertz wave element 20 accordingly.

On the other hand, before and after the test of the terahertz wave element 20, the upper bracket 33 is opened, and the element substrate 40 is inserted or previously inserted between the lower bracket 32 and the support 31. Remove it.

At this time, in order to more easily open the upper bracket 33 coupled to the lower bracket 32, one side of the open button 32-2 provided on the lower bracket 32 is pressed to open the open button 32-2. The upper bracket 33 is spaced apart from the lower bracket 32 using the lever principle.

8 is a front view and a perspective view for explaining the structure of the probe substrate according to an embodiment of the present invention.

Referring to FIGS. 8A and 8B, the probe substrate 34 may include a substrate 34-1 and second contact pads 42 of the device substrate 40 on one side of the substrate 34-1. The first probe pin bonding pad 34-1 patterned to have a position corresponding to the first probe pin bonding pad 34-1, and the other side of the substrate 34-1 adjacent to the first probe pin bonding pad 34-1 of the external terminal 50. The substrate may be electrically connected between the second probe pin bonding pad 34-2, the first probe pin bonding pad 34-1, and the second probe pin bonding pad 34-2 patterned to correspond to the pin arrangement. And patterned signal lines 34-3 in 34-1.

The first probe pins 35-1 contacting the second contact pads 43 of the device substrate 40 are fixedly disposed on the first probe pin bonding pad 34-1 of the probe substrate 34. Second probe pins 35-2 to which the external terminal 50 is coupled are fixedly disposed on the two probe pin bonding pads 34-2.

Accordingly, the first probe pins 35-1 and the second probe pins 35-2 are connected to the first probe pin bonding pad 34-1 and the second probe pin bonding pad 34-2 of the probe substrate 34. And by signal lines 34-3.

As a result, the test system can be electrically connected to the terahertz wave element 20 by coupling the external terminal 50 to the second probe pins 35-2 fixedly disposed on the probe substrate 34 as shown in FIG. have.

Therefore, when the test support apparatus for the terahertz wave device of the present invention is used, not only does the signal line joining work be required as in the related art, but also the problem that the arrangement of the device is disturbed and contaminated by the test operation does not occur. .

The present invention described above is not limited to the above-described embodiments and the accompanying drawings, and it is common in the art that various substitutions, modifications, and changes can be made without departing from the technical spirit of the present invention. It will be apparent to those skilled in the art.

1 is a diagram illustrating a concept of generation of terahertz waves using a photoconductive antenna;

2 is a front view of a terahertz wave device using a conventional photoconductive antenna,

3 and 4 are a perspective view and a perspective exploded view showing a test support apparatus for a terahertz wave device according to an embodiment of the present invention;

5 is a perspective view for explaining the structure of a device substrate according to an embodiment of the present invention;

Figure 6 is a perspective view for explaining the structure of the support according to an embodiment of the present invention,

7a and 7b are perspective views for explaining the structure of the upper and lower brackets according to an embodiment of the present invention, and

8 is a front view and a perspective view for explaining the structure of the probe substrate according to an embodiment of the present invention.

Claims (12)

A support fixing the device substrate on which the terahertz wave device to be tested is mounted; A bracket positioned on the support and opened and closed in a folder manner; And And a probe substrate fixedly disposed on the bracket, the probe substrate having probe pins electrically contacting the device substrate and electrically connected to the terahertz wave device when the bracket is in a closed state. The method of claim 1, wherein the support is It is implemented in the form of a plate opening the central region, the support plate for converging the device substrate on the inside of both sides; And And a ball plunger installed at an outer region of the support plate to support the support plate from the air and fixing the position of the device substrate. The method of claim 2, wherein the bracket An area corresponding to the opening area of the support plate is opened and a front side surface of the lower bracket is implemented to have a “c” shape in which the device substrate is opened so that the device substrate can be inserted or removed; And An area corresponding to the opening area of the support plate is implemented to be opened, and the rear side includes an upper bracket which is rotated a predetermined angle with respect to the rear side of the lower bracket after the rear side of the lower bracket is coupled. Test support device for terahertz wave devices. The method of claim 3, wherein the support is And a lower bracket fastening hole formed in an outer region of the support plate to induce coupling with the lower bracket. The method of claim 3, wherein the lower bracket A fixing magnet disposed on both sides of the lower bracket to uniformly adjust a coupling pressure with the upper bracket; An opening button disposed on both sides of the lower bracket to induce opening and closing of the upper bracket; And And an upper bracket coupling hole formed at a rear surface of the lower bracket to induce coupling with the upper bracket. The method of claim 5, wherein the open button Test support device for terahertz wave device, characterized in that for opening and closing the upper bracket through the lever principle. The method of claim 5, wherein the lower bracket And a support fastening hole formed at a position corresponding to the lower bracket fastening holes of the support to induce coupling with the support. The method of claim 3, wherein the upper bracket A fixing magnet disposed below both sides of the upper bracket to uniformly adjust a coupling pressure with the lower bracket; And And a lower bracket coupling shaft formed through the rear surface of the upper bracket so that the rotating shaft coupled to the upper bracket coupling hole of the lower bracket can be inserted therein. The method according to claim 5 or 8, And the fixing seat of the upper bracket and the fixing seat of the lower bracket coupled to each other when the upper bracket is in a closed state have polarities complementary to each other. The method of claim 1, wherein the probe substrate Board; First probe pins fixedly disposed on the substrate to be electrically connected to second contact pads of the device substrate; Second probe pins fixedly disposed on the substrate such that external terminals can be coupled; And And a signal line patterned on the substrate to electrically connect the first probe pins to the second probe pins. The method of claim 1, wherein the device substrate  A laminated board having a position corresponding to an area in which the terahertz wave element receives laser pulse light or emits terahertz wave; First contact pads formed on the stacked board to have positions corresponding to the contact terminals of the terahertz wave element; Second contact pads formed on the stacked board to have positions corresponding to probe pins of the probe substrate; And And a signal line patterned on the stacked board to electrically connect the first contact pads to the second contact pads. 12. The device of claim 2 or 11, wherein the device substrate is And a ball plunger fastening hole formed in an outer region of the stacked board and inducing fastening with the ball plunger of the support.

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