KR100953436B1 - Thin Film Transistor of Liquid Crystal Display Device and Method of Manufacturing The Same - Google Patents

Abstract

A thin film transistor substrate of a liquid crystal display device having a multi-cell gap transflective structure and a manufacturing method thereof are disclosed. The thin film transistor substrate includes a thin film transistor formed on the substrate and a pixel electrode formed to be electrically connected to the thin film transistor. In this case, the pixel electrode includes a reflection part and a transmission part that are separated from each other, and has a structure in which data lines are formed in a boundary area between the reflection part and the transmission part. While adopting a dual-division pixel structure as a base, the organic film stepping on the boundary between the reflecting unit and the transmitting unit overlaps with the data line, thereby minimizing afterimages and declining by the stepping.

Description

Thin Film Transistor of Liquid Crystal Display Device and Method of Manufacturing The Same

1 is a schematic cross-sectional view of a liquid crystal display device having a conventional transflective structure.

2 is a schematic plan view of a thin film transistor substrate of a liquid crystal display device having a transflective structure according to an exemplary embodiment of the present invention.

3 is a cross-sectional view taken along the line I-I of the thin film transistor substrate shown in FIG. 2.

4A to 4E are cross-sectional views illustrating a manufacturing process of the thin film transistor substrate illustrated in FIG. 3, and are shown as cross-sectional views taken along the line II-II of FIG. 3.

5A through 5E are cross-sectional views illustrating a manufacturing process of a thin film transistor substrate of a liquid crystal display device having a transflective structure according to a second exemplary embodiment of the present invention.

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin film transistor substrate of a liquid crystal display device and a method for manufacturing the same, and more particularly, to a thin film transistor substrate of a liquid crystal display device having a multi-cell gap transflective structure and an easy method for manufacturing the same.

In today's information society, the role of electronic display devices becomes more and more important, and various electronic display devices are widely used in various industrial fields.

In general, an electronic display device refers to a device that transmits various information to a human through vision. That is, an electronic display device may be defined as an electronic device that converts electrical information signals output from various electronic devices into optical information signals that can be recognized by a human vision, and plays a role of a bridge between humans and electronic devices. It can be defined as.

As the semiconductor technology rapidly advances, the demand for a flat panel display device is rapidly increasing due to solidification, low voltage, low power, small size, and light weight of various electronic devices. Among such flat panel display devices, the liquid crystal display device is thinner and lighter than other display devices, and has a low power consumption and a low driving voltage.

The liquid crystal display is classified into a transmissive type, a reflective type, and a transflective type according to a method of using light. That is, the transmissive liquid crystal display device includes a light generating device on the rear side of the liquid crystal panel to display an image by self light passing through the liquid crystal panel, and the reflective liquid crystal display device displays an image by reflecting external light provided from the outside. do. The transflective liquid crystal display displays an image using self light or external light generated from the light generating device by appropriately reacting according to the amount of external light.

The liquid crystal display includes a liquid crystal display panel including two substrates on which electrodes are formed and a liquid crystal layer injected therebetween, and light transmitted by applying a voltage to the electrodes of the liquid crystal display panel to rearrange the liquid crystal molecules of the liquid crystal layer. Display the image by adjusting the amount of.

1 is a cross-sectional view of a liquid crystal display device having a transflective structure according to the prior art.

As shown in FIG. 1, a liquid crystal display having a general transflective structure is a color filter provided to face a TFT substrate 100 and a TFT substrate 100 in which a thin film transistor (TFT) is formed in a matrix form. And a liquid crystal layer 150 injected between the substrate 140 and the TFT substrate 100 and the color filter substrate 140.

Here, the TFT substrate 100 includes the TFT 110 formed on the first glass substrate 102 and the organic insulating layer 120 and the organic insulating layer 120 formed on the first glass substrate 102 including the TFT 110. The unit pixel formed of the pixel electrode 130 formed on the substrate is formed in a matrix form. The pixel electrode 130 is electrically connected to the thin film transistor, and includes a transmissive electrode for transmitting internal light and a reflective electrode for exposing a portion of the transmissive electrode and reflecting external light. The thin film transistor is composed of electrodes branched from a plurality of gate lines (not shown) and data lines (not shown).                         

In this case, the TFT 110 includes a gate electrode 111, a source electrode 112, and a drain electrode 113. In addition, the gate electrode 111 maintains an insulating state from the source electrode 112 and the drain electrode 113 through the gate insulating layer 114. As power is applied to the gate electrode 111, an active pattern 115 and an ohmic contact pattern 116 are formed on the gate insulating layer 114 to apply power to the drain electrode 113 from the source electrode 112. The source electrode 112 and the drain electrode 113 are formed on the active pattern 115 and the ohmic contact pattern 116.

An organic insulating film 120 is interposed between the TFT 110 and the pixel electrode 130, and a contact hole 125 for exposing the drain electrode 113 is formed in the organic insulating film 120. Here, the drain electrode 113 and the source electrode 112 are electrically connected through the contact hole 125.

Thereafter, the pixel electrode 130 is coated with a uniform thickness on the drain electrode 113 exposed by the organic insulating layer 120 and the contact hole 125. The pixel electrode 130 includes a transparent electrode 132 and a reflective electrode 134.

Specifically, on the organic insulating layer 120 and the contact hole 125, a transparent electrode made of indium tin oxide (hereinafter referred to as ITO) or indium zinc oxide (hereinafter referred to as IZO) 132 is stacked with a uniform thickness, and a reflective electrode 134 made of aluminum (Al) having excellent reflectance is stacked on the transparent electrode 132 with a uniform thickness. Here, the reflective region is a region where the reflective electrode 134 is formed, and the transmission region is a region where the transparent electrode 132 is exposed.

The color filter substrate 140 may include a black matrix 143, a color filter 144, an over coating layer 146, and a common electrode 148 to prevent light leakage on the second glass substrate 142. ) Is a substrate formed sequentially.

Specifically, the color filter 144 is an R (Red) color expressed in red by light, a G (Green) color expressed in green by light, and a B (Blue) color expressed in blue by light. It consists of pixels.

Further, each of the color pixels is formed on the second glass substrate 142 in which the black matrix 143 is not formed while partially overlapping with the black matrix 143, and thus, between the color filter 144 and the black matrix 143. Steps are formed in the. A planarization film 146 is formed to remove such a step, and a common electrode 148 is formed on the planarization film 146 with a uniform thickness. The common electrode 148 is made of a transparent conductive film such as an ITO or IZO film. At this time, the planarization film 146 is an organic film made of acrylic resin or polyamide resin, which is one of the photosensitive organic insulating films.

In addition, the color filter substrate 140 may be formed such that the color pixels partially overlap with adjacent color pixels without forming a black matrix between the color pixels in order to maximize the reflection efficiency of the liquid crystal display.

However, when the pixel electrode is formed to have a structure having multiple cell gaps according to the above-described method, an organic film step exists in the boundary region between the reflective electrode and the transparent electrode. Such a step has a problem of causing afterimage or disclination.

SUMMARY OF THE INVENTION An object of the present invention is to provide a thin film transistor substrate of a liquid crystal display device in which a data line is arranged in a boundary region of a transmissive part and a reflecting part, and which is used as one pixel.

Another object of the present invention is to provide an easy method for manufacturing a thin film transistor substrate of a liquid crystal display device as described above.

In the present invention to achieve the above object

It includes a thin film transistor formed on the substrate and a pixel electrode formed to be electrically connected to the thin film transistor,

The pixel electrode includes a reflective part and a transmission part separated from each other, and a thin film transistor substrate of a liquid crystal display device in which a data line is formed in a boundary region of the reflection part and the transmission part.

Another object of the present invention described above

Stacking and etching a metal layer on the substrate to form a gate pattern including a gate line, a gate pad, and a gate electrode;

Stacking a gate insulating layer on the gate pattern;

Forming a semiconductor layer and a doped amorphous silicon layer on the gate insulating layer, and then performing a photolithography process to form a semiconductor layer pattern and an ohmic contact layer pattern;                     

Forming a data pattern including a data line, a data pad, and a source / drain electrode by photolithography after coating the wiring material;

Stacking a passivation layer on the data pattern;

Applying a photosensitive material to form an organic insulating film and forming a plurality of irregularities on the surface, and at the same time, removing a region exposing the remaining region and a part of the drain electrode, leaving the region where the reflective electrode is to be formed;

Etching the passivation layer to form contact holes exposing a portion of the drain electrode in a region where an electrode is to be formed;

Stacking and patterning a transparent conductive material to form a transparent electrode, wherein the transparent conductive material is alternately formed in an area defined by the data line and the gate line, and at the same time, the center is separated to form two transmission portions; And

The reflective material is stacked and patterned to form a reflective electrode on the photosensitive material with a predetermined distance from the transparent electrode, alternately formed with the transparent electrode in an area defined by the data line and the gate line, and at the same time. Is separated so that two reflecting portions are formed, thereby achieving the thin film transistor substrate manufacturing method of the liquid crystal display device.

In this case, it is preferable that a data line is formed between the reflecting unit and the transmitting unit, and separate thin film transistors are electrically connected to the reflecting unit and the transmitting unit.

In particular, the source electrode, the drain electrode, the data pad and the data line are formed of a double layer of aluminum-nedium alloy / chromium, and then exposing the data pad when performing an etching process for exposing the drain electrode. It is desirable to perform a front etch process on the neodium alloy to remove it.

In addition, another object of the present invention described above

Stacking and etching a metal layer on the substrate to form a gate pattern including a gate line, a gate pad, and a gate electrode;

Stacking a gate insulating layer on the gate pattern;

Forming a semiconductor layer and a doped amorphous silicon layer on the gate insulating layer, and then performing a photolithography process to form a semiconductor layer pattern and an ohmic contact layer pattern;

Applying a photosensitive material to form an organic insulating film and forming a plurality of irregularities on the surface, and removing the organic insulating film of the remaining area while leaving a region where a reflective electrode is to be formed;

After the wiring material is applied, the photo is etched to form a data pattern including a data line, a data pad, and a source / drain electrode, and at the same time to form a reflective electrode extending to the drain electrode, in a region defined by the data line and the gate line. Forming alternately and at the same time separating the center to form two reflectors;

Stacking a protective film on the entire surface of the resultant product;

Etching the passivation layer to form contact holes exposing a portion of the drain electrode; And                     

Stacking and patterning a transparent conductive material to form a transparent electrode, wherein the transparent conductive material is alternately formed in the region defined by the data line and the gate line, alternately formed with the reflective electrode, and separated from the center to form two transmission parts. This is also achieved by a method for manufacturing a thin film transistor substrate of a liquid crystal display device.

According to the present invention, the reflection part and the transmission part are formed separately from each other, but the data line is disposed on the boundary surface, thereby minimizing defects due to the organic film step existing at the interface between the reflection part and the transmission part.

Hereinafter, the present invention will be described in more detail with reference to the accompanying drawings.

2 is a schematic plan view of a thin film transistor substrate of a liquid crystal display device having a transflective structure according to the present invention.

Referring to FIG. 2, transparent electrodes 332 and reflective electrodes 334 are alternately formed in regions defined by data lines 222 formed in a vertical direction and gate lines 211 formed in a horizontal direction. It can be seen that the transparent electrode 332 and the reflective electrode 334 are divided into two regions.

In addition, it can be seen that the pixel electrode adjacent to the reflective part of one pixel electrode in the thin film transistor substrate according to the present invention includes the reflective part, and the pixel electrode adjacent to the transmissive part of the pixel electrode includes the transparent part. As a result, adjacent pixels are arranged so that the arrangement of the reflecting portion and the transmitting portion is symmetrical with each other. The reflection part and the transmission part in one pixel share one source electrode and are electrically connected to each thin film transistor.                     

This will be described in more detail. One transmission part 332 and one reflection part 334 are arranged around one data line 222 to form one pixel. In addition, the first drain electrode 313a and the organic insulating layer which are in electrical contact with the transparent electrode 332 through the contact hole formed in the organic insulating layer while using the source electrode 312 branched from the data line 222 as a common source electrode. A second drain electrode 313b is formed in electrical contact with the reflective electrode 334 through the contact hole formed on the 320. As power is applied to the gate electrodes 311a and 311b insulated from the source electrodes 312 and the drain electrodes 313a and 313b through the gate insulating film, power is supplied from the source electrodes 312 to the drain electrodes 313a and 313b. Active patterns 315a and 315b and an ohmic contact pattern (not shown) for application are also formed.

3 is a cross-sectional view taken along the line I-I of the thin film transistor substrate shown in FIG. 2.

Referring to FIG. 3, a gate insulating film 314 is formed on a substrate 302, and data lines 222 are formed on the gate insulating film 314 at regular intervals. The box shown by the dotted line is an area forming one pixel. The reflective electrode 334 and the transparent electrode 332 are formed to be spaced apart from the data line 222, and the gap between them is filled by the data line 222.

Hereinafter, the manufacturing method of the thin film transistor substrate of the present invention as described above will be described.

4A through 4E are cross-sectional views illustrating a manufacturing process of the thin film transistor substrate illustrated in FIG. 3, and are shown in cross-sectional views along the line II-II of FIG. 3. The section shown in cross-sectional view will be described with reference to FIG. 3 simultaneously as a box-marked section in FIG. 3.

First, as shown in FIG. 4A, a first gate wiring layer made of chromium, an aluminum-neodymium alloy, or the like, and a gate wiring layer of a second gate wiring layer made of an aluminum-neodium alloy, molybdenum, or the like are stacked on the insulating substrate 302. Next, the gate line 211 is patterned to extend in the horizontal direction, the gate electrodes 311a and 311b and the gate line 211 of the thin film transistor are connected to the gate line 211 to receive a gate signal from the outside. It includes a gate pad (not shown) for transmitting to form a gate pattern extending in the horizontal direction.

Next, a three-layer film of a gate insulating film 314 made of silicon nitride, a semiconductor layer made of amorphous silicon, and a doped amorphous silicon layer is successively stacked, and the semiconductor layer and the doped amorphous silicon layer are photo-etched to form gate electrodes 311a and 311b. The island-like semiconductor layers 315a and 315b and the ohmic contacts 316a and 316b are formed on the gate insulating layer 314.

Next, as shown in FIG. 4B, a data wiring layer made of a molybdenum-tungsten alloy film or the like is formed on the ohmic contacts 316a and 316b and the gate insulating film 314. Thereafter, by performing a photolithography process to etch the wiring layer, the common source electrode connected to the data line 222 and the data line 222 crossing the gate line 211 and extending to the upper portions of the gate electrodes 311a and 311b ( 312, which is connected to one end of the data line 222 and is separated from the data pad (not shown) and the source electrode 312 receiving an image signal from the outside, the source electrode around the gate electrodes 311a and 311b. A data pattern including drain electrodes 313a and 313b facing 312 is formed. More preferably, the data wiring layer is formed of a double layer of aluminum-neodium alloy / chromium. In this case, upon etching the insulating layer for forming the electrode layer, a process of opening the data pad and removing the aluminum-neodium alloy layer, which is the upper layer, must be performed through the entire surface etching process.

Next, the doped amorphous silicon layer pattern not covered by the data pattern is etched and separated on both sides of the gate electrodes 311a and 311b, while the semiconductor layer pattern between the doped amorphous silicon layers 316a and 316b ( 315a, 315b). Subsequently, oxygen plasma is preferably performed to stabilize the surfaces of the exposed semiconductor layers 315a and 315b.

Next, referring to FIG. 4C, an inorganic insulating film 321 used as an interlayer insulating film and a protective film is deposited, and then an organic insulating film is formed by applying a photosensitive organic material. After the lens is exposed to the surface of the organic insulating film by an exposure process using a mask, the organic insulating film of the thin film transistor region, the transmission region, the gate pad, and the data pad is exposed and developed. Then, a plurality of irregularities for light scattering are formed on the surface of the organic insulating film, and the organic insulating film of the thin film transistor region and the transmission region is removed and the organic insulating film pattern 322 is formed. Preferably, the unevenness has a major gradient of about 5 to 15 degrees.                     

Referring to FIG. 4D, the inorganic insulating layer 319 on the drain electrodes 313a and 313b is removed to form contact holes exposing the drain electrodes 313a and 313b.

Referring to FIG. 4E, a transparent electrode material, such as ITO or IZO, is deposited on the front surface of the resultant and etched to form a transparent electrode 332 connected to the drain electrode 313a through a contact hole. At the same time, although not shown, an auxiliary gate pad and an auxiliary data pad connected to the gate pad and the data pad are formed through the second and third contact holes, respectively.

Thereafter, a reflective material such as aluminum is deposited on the entire surface of the resultant and then etched to form a reflective electrode 334 separated from the transparent electrode 332 while being connected to the drain electrode 313b.

The formed thin film transistor has a semi-transmissive structure, and the insulating layer under the reflecting portion is formed thicker than the insulating layer under the transmissive portion. This is because the distance between the common electrode and the reflective electrode is smaller than the distance between the common electrode and the transparent electrode during bonding with the color filter substrate. Preferably, the gap between the common electrode and the reflective electrode is half the distance between the common electrode and the transparent electrode.

The process of the present invention may omit a separate process for forming the reflective electrode and perform the process for forming the data line and simultaneously form the reflective electrode. This has the advantage of reducing the number of masks required for the process. This process is described as follows.

5A through 5E are cross-sectional views illustrating a manufacturing process of a thin film transistor substrate of a liquid crystal display device having a transflective structure according to a second exemplary embodiment of the present invention.

Referring to FIG. 5A, as in FIG. 4A, a gate wiring layer is stacked on an insulating substrate 302, and then patterned to form a gate line 211 extending in a horizontal direction, and gate electrodes 311a and 311b of a thin film transistor. And a gate pad (not shown) connected to an end of the gate line 211 to receive a gate signal from the outside and to be transmitted to the gate line 211, and forms a gate pattern extending in a horizontal direction.

Next, a three-layer film of a gate insulating film 314 made of silicon nitride, a semiconductor layer made of amorphous silicon, and a doped amorphous silicon layer is successively stacked, and the semiconductor layer and the doped amorphous silicon layer are photo-etched to form gate electrodes 311a and 311b. The island-like semiconductor layers 315a and 315b and the ohmic contacts 316a and 316b are formed on the gate insulating layer 314.

Next, referring to FIG. 5B, an organic insulating layer is formed by coating a photosensitive organic material. After the lens is exposed to the surface of the organic insulating film by an exposure process using a mask, the organic insulating film is exposed and developed to the remaining regions except for the region where the reflective electrode is to be formed. Then, a plurality of irregularities for scattering light are formed on the surface of the organic insulating layer and an organic insulating layer pattern 319 is formed.

Referring to FIG. 5C, a data wiring layer made of a molybdenum-tungsten alloy film or the like is formed on the entire surface of the resultant product. Thereafter, a photolithography process is performed to etch the wiring layer to connect the data line 222 and the data line 222 crossing the gate line 211 to extend to the upper portions of the gate electrodes 311a and 311b. 312, which is connected to one end of the data line 222, is separated from a data pad (not shown) and a source electrode 312 receiving an image signal from the outside, and has a source centered on the gate electrodes 311a and 311b. A data pattern including drain electrodes 313a and 313b facing the electrode 312 is formed. At the same time, the reflective electrode 334 is formed to extend to the drain electrode 313b in the region where the reflective electrode is formed.

More preferably, the data wiring layer and the reflective electrode are formed of a double layer of aluminum-nedium alloy / chromium. In this case, upon etching the insulating layer for forming the electrode layer, a process of opening the data pad and removing the aluminum-neodium alloy layer, which is the upper layer, must be performed through the entire surface etching process.

Next, the doped amorphous silicon layer pattern not covered by the data pattern is etched and separated on both sides of the gate electrodes 311a and 311b, while the semiconductor layer pattern between the doped amorphous silicon layers 316a and 316b ( 315a, 315b). Subsequently, oxygen plasma is preferably performed to stabilize the surfaces of the exposed semiconductor layers 315a and 315b.

Next, referring to FIG. 5D, after depositing an inorganic insulating film used as an interlayer insulating film and a protective film, contact holes are formed by removing the inorganic insulating film on the drain electrode 313a and the reflective electrode 334.

Referring to FIG. 5E, a transparent electrode material such as ITO or IZO is deposited on the front surface of the resultant and etched to form a transparent electrode 332 connected to the drain electrode 313a and the reflective electrode 334 through a contact hole. do. At the same time, although not shown, an auxiliary gate pad and an auxiliary data pad connected to the gate pad and the data pad are formed through the second and third contact holes, respectively.

As described above, when the reflective electrode is formed at the time of forming the data line, the transmissive portion is directly connected to the drain electrode, but the reflective portion is connected to the transparent electrode while the voltage is applied to the liquid crystal by the transparent electrode, and the optical reflection is the source / drain metal. Will be done at.

According to this process, it is also possible to reduce the number of masks. That is, a first mask for forming a gate, a second mask for forming an active layer pattern, third and 3.5 masks for forming an embossed pattern / via, a 4.5 mask for forming a source / drain electrode, an insulating layer etching Since the 5.5 mask for the 6.5 and the 6.5 mask for the etching of the transparent electrode are required, the transistor substrate can be formed by a so-called 6.5 sheet mask process. This is advantageous in terms of process efficiency as it reduces one mask process compared to the existing 7.5 mask process.

According to the present invention as described above, since the organic film step existing on the boundary between the reflecting part and the transmitting part overlaps with the data line while adopting the dual-division pixel structure as a base, afterimage or declining due to the step can be minimized. .

In addition, it is possible to replace the reflective electrode with a source / drain electrode, in which case the process is simplified and the number of masks can be reduced, which is advantageous in terms of cost and productivity.

Although the above has been described with reference to the preferred embodiments of the present invention, those skilled in the art can variously modify and change the present invention without departing from the spirit and scope of the present invention as set forth in the claims below. It will be appreciated.

Claims (14)

Gate line; A data line crossing the gate line; A first thin film transistor including a first gate electrode connected to the gate line, a first source electrode connected to the data line, and a first drain electrode spaced apart from the first source electrode; A second thin film transistor including a second gate electrode connected to the gate line, a second source electrode connected to the data line, and a second drain electrode spaced apart from the second source electrode; And A reflective electrode electrically connected to the first drain electrode and disposed in one region with the data line therebetween, and a transparent electrode electrically connected to the second drain electrode and disposed in the other region with the data line therebetween The thin film transistor substrate of the liquid crystal display device including the pixel electrode including a. The thin film transistor substrate of claim 1, wherein the reflective electrode of the pixel electrode is disposed adjacent to the reflective electrode of the adjacent pixel electrode. The thin film transistor substrate of claim 1, wherein the transparent electrode extends to the one region so as to overlap the reflective electrode and is connected to the reflective electrode through a contact hole. The method of claim 1, further comprising a data pad connected to one end of the data line, And the data line is formed of a double layer of an aluminum-neodium alloy / chromium, and the data pad is formed of chromium. The thin film transistor substrate of claim 1, wherein the reflective electrode extends from the first drain electrode. The thin film transistor substrate of claim 1, further comprising an organic insulating layer pattern disposed under the reflective electrode. Stacking and etching a metal layer on a substrate to form a gate pattern including a gate line, a gate pad formed at an end of the gate line, and a first gate electrode and a second gate electrode connected to the gate line; Stacking a gate insulating layer on the substrate on which the gate pattern is formed; Forming a semiconductor layer and a doped amorphous silicon layer on the gate insulating layer, and then performing a photolithography process to form a semiconductor layer pattern and an ohmic contact layer pattern; Applying a wiring material and then etching the photo to intersect the gate line, a data pad connected to one end of the data line, a first source electrode and a second source electrode connected to the data line, and the first and second source electrodes. Forming a data pattern including a first drain electrode and a second drain electrode spaced apart from each other; Stacking a protective film on the substrate on which the data pattern is formed; Forming an organic insulating layer by applying a photosensitive material and forming an organic insulating layer pattern having a plurality of irregularities formed on a surface thereof; Etching the passivation layer to form contact holes exposing the first and second drain electrodes; Stacking and patterning a transparent conductive material to form a transparent electrode disposed in one region having the data line interposed therebetween and connected to the first drain electrode through a contact hole; And Stacking and patterning a reflective material to form a reflective electrode disposed on the organic insulating pattern in the other region having the data line therebetween, the reflective electrode being spaced apart from the transparent electrode and connected to the second drain electrode through a contact hole; The thin film transistor substrate manufacturing method of the liquid crystal display device. delete delete The method of claim 7, wherein the first and second source electrodes, the first and second drain electrodes, the data pad, and the data line are formed of a double layer of aluminum-neodium alloy / chromium, and subsequently expose the drain electrode. And exposing the data pads during the etching process and performing a front side etching process on the aluminum-neodium alloy. Stacking and etching a metal layer on a substrate to form a gate pattern including a gate line, a gate pad formed at an end of the gate line, a first gate electrode connected to the gate line, and a second gate electrode; Stacking a gate insulating layer on the substrate on which the gate pattern is formed; Forming a semiconductor layer and a doped amorphous silicon layer on the gate insulating layer, and then performing a photolithography process to form a semiconductor layer pattern and an ohmic contact layer pattern; Forming an organic insulating layer by applying a photosensitive material and forming an organic insulating layer pattern having a plurality of irregularities formed on a surface thereof; A data line intersecting the gate line by applying a wiring material and then etching the data line, a data pad connected to one end of the data line, a first source electrode connected to the data line, a first drain electrode spaced apart from the first source electrode, and the first line electrode A reflective electrode extending from the first drain electrode and disposed on the organic insulating pattern and disposed in one region with the data line interposed therebetween; a second source electrode connected to the data line; and a second drain electrode spaced apart from the second source electrode Forming a data pattern comprising a; Stacking a passivation layer on the substrate on which the data pattern is formed; Etching the passivation layer to form contact holes exposing the second drain electrode and the reflective electrode; And A transparent electrode stacked and patterned on the other side region having the data line interposed therebetween and the one side region on which the reflective electrode is disposed, and the transparent electrode connected to the second drain electrode and the reflective electrode through the contact holes, respectively. Forming a thin film transistor substrate of the liquid crystal display device comprising the step of forming a. delete delete The method of claim 11, wherein the first and second source electrodes, the first and second drain electrodes, the data pads and the data lines are formed of a double layer of aluminum-nedium alloy / chromium, and then exposed to the drain electrode. Exposing the data pads during the etching process and performing a front-side etching process on the aluminum-neodium alloy.

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