KR100944946B1 - Method of fabricating substrate where patterns are formed - Google Patents

Abstract

Disclosed is a method of manufacturing a substrate on which a pattern is formed. In the method of manufacturing a substrate having a pattern according to the present invention, a first binder pattern having a selective bonding force is formed at a position where an oxide bead pattern is to be formed on the substrate, and a bonding force with the first binder is greater than that with the substrate. Binary binder is coated on the oxide beads. The oxide binder coated with the second binder is then applied onto the substrate to form oxide beads coated with the second binder on the first binder pattern, and the substrate is heat treated. In another method of manufacturing a substrate on which a pattern is formed according to the present invention, a solution in which oxide beads are dispersed is prepared, a pattern is formed on a substrate, and a temporary structure is installed above the substrate so that microchannels are formed on the substrate. Then, a solution in which the oxide beads are dispersed is injected into the microchannel to fix the oxide beads on the substrate, and the substrate is heat treated. According to the present invention, inexpensive oxide beads can be patterned on a substrate in a desired shape, thereby preventing damage to the substrate during dry etching, and there is no problem of lowering the yield of the device because there is no etching process. Is increased. In addition, there is no need for expensive equipment investment for dry etching, so it is economically advantageous and has high productivity to manufacture a large amount of substrate in a short time.

Description

Method of fabricating substrate where patterns are formed}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate for a semiconductor device and a method of manufacturing the same, and more particularly, to a substrate on which a pattern is formed so as to be used for manufacturing a high output light emitting diode (LED).

The LED market grew based on low-power LEDs used in portable communication devices such as mobile phones, keypads of small home appliances, and back light units of liquid crystal displays (LCDs). Recently, as the need for high-power and high-efficiency light sources for interior lighting, exterior lighting, automotive interior and exterior, and large LCD backlight units has emerged, the LED market is shifting to high-power products.

The biggest problem with LEDs is their low luminous efficiency. In general, the luminous efficiency is determined by the light generation efficiency (internal quantum efficiency), the efficiency emitted outside the device (external light extraction efficiency), and the efficiency with which light is switched by the phosphor. In order to increase the output power of the LED, it is important to improve the active layer characteristics in terms of internal quantum efficiency, but it is very important to increase the external light extraction efficiency of the light actually generated.

The biggest obstacle to the emission of light out of the LED is the internal total reflection due to the difference in refractive index between each layer of the LED. Due to the difference in refractive index between the layers of the LED, the light exiting the interface corresponds to about 20% of the generated light. In addition, the light that has not passed through the interface moves inside the LED and is converted into heat. As a result, the luminous efficiency is low and the amount of heat generated by the device is increased, thereby shortening the life of the LED.

In order to improve the external light extraction efficiency, a method of increasing the roughness of the p-GaN surface or the n-GaN surface, a method of roughening the surface of the substrate, which is the base portion of the device, or forming a curved pattern is proposed.

FIG. 1A is a cross-sectional view of the LED 14 formed on the substrate 10 on which the pattern 12 is formed, and FIG. 1B is a view of the substrate 10 on which the pattern 12 is formed. In particular, in LEDs using heterogeneous substrates such as sapphire, forming a pattern on the substrate has an effect of improving external light extraction efficiency.

The pattern of the surface of the sapphire substrate is calculated to increase the external light extraction efficiency by 100% or more, and Korean Patent Application Nos. 2004-0021801 and 2004-0049329 refer to the shapes or patterns thereof. As a method of forming such a pattern, an etching method is currently used. In this method, the resist and the sapphire substrate are simultaneously etched by dry etching after several tens of micrometer thick films are formed to form a hemispherical pattern shape to be formed on the sapphire substrate.

The pattern formation method using such an etching has a problem that the height of the pattern is limited by the etching selectivity of the resist and the substrate, and the uniformity of the final formed pattern is low due to the low uniformity of the patterning process and the dry etching process of the thick film resist. There is this. Above all, the pollution caused by dry etching is the biggest problem. The reactants such as the resist and the gas used for etching remain on the surface of the sapphire substrate due to locally generated heat during etching and are not easily removed even after the cleaning process. In addition, damage to the substrate surface is also expected by the high energy gas particles used for etching. (Silicon processing for the VLSI era, vol 1. process technology, p.574 ~ 582) When such contamination occurs, a fatal defect in the nitride epitaxial layer due to contamination when GaN epitaxial growth, the next process to be connected, is performed. This can happen. Due to the above drawbacks, very low yields are expected when fabricating devices using sapphire substrates patterned using real etching.

In the dry etching process described above, an expensive etching apparatus having a cooling function must be used for excessive heat emission generated during a forced etching of sapphire, which is difficult to etch. In order to increase the light extraction efficiency, a process of further reducing the pattern size to be etched using an expensive photo equipment such as a stepper should be used. Therefore, in order to perform the dry etching process described above, high cost is required. In addition, a process using a photo equipment such as a stepper has a disadvantage in that it is difficult to increase the process throughput due to a complicated process.

The technical problem to be achieved by the present invention is to provide a substrate manufacturing method that can increase the pattern uniformity without damaging the device characteristics due to damage or residue of the substrate crystal, which is a problem when patterning the substrate by the conventional etching method. It's there.

According to an aspect of the present invention, there is provided a method of manufacturing a substrate on which a pattern is formed, the method comprising: forming a first binder pattern having a selective bonding force at a position to form an oxide bead pattern on a substrate; Coating the oxide beads with a second binder having a greater bonding force with the first binder than with the substrate; Applying oxide beads coated with the second binder onto the substrate to form oxide beads coated with the second binder on the first binder pattern; And heat treating the substrate.

According to another aspect of the present invention, there is provided a method of manufacturing a substrate on which another pattern is formed, the method including: forming a first binder pattern having a selective bonding force in a region except for a position at which an oxide bead pattern is to be formed on a substrate; Coating the oxide beads with a second binder having a smaller binding force with the first binder than with the substrate; Applying oxide beads coated with the second binder onto the substrate to form oxide beads coated with the second binder on a region where the surface of the substrate is exposed; And heat treating the substrate.

According to another aspect of the present invention, there is provided a method of manufacturing a substrate on which a pattern is formed, comprising: preparing a solution in which oxide beads are dispersed; Forming a pattern on the substrate; Installing a temporary structure above the substrate such that microchannels are formed on the substrate; Immobilizing the oxide beads onto the substrate by injecting a solution in which the oxide beads are dispersed into the microchannels; And heat treating the substrate.

According to another aspect of the present invention, there is provided a method of manufacturing a substrate on which a pattern is formed, comprising: preparing a solution in which oxide beads are dispersed; Forming a pattern on the substrate; Fixing the oxide beads on the substrate by immersing the patterned substrate in a solution in which the oxide beads are dispersed and removing the substrate at least once; And heat treating the substrate.

According to another aspect of the present invention, there is provided a method of manufacturing a substrate on which a pattern is formed, the method including: installing a temporary structure above the substrate to form a microchannel on the substrate; Injecting the bead mixture into the microchannels to assemble the oxide beads and the polymer beads on the substrate; Separating the temporary structure from the substrate; Removing the polymer beads; And heat treating the substrate.

According to the substrate manufacturing method according to the present invention, it is possible to pattern inexpensive oxide beads on the substrate in a desired shape to prevent damage to the substrate during dry etching, there is no problem of lowering the yield of the device because there is no etching process as a result The mass productivity of the device is increased. In addition, there is no need for expensive equipment investment for dry etching, so it is economically advantageous and has high productivity to manufacture a large amount of substrate in a short time.

Hereinafter, with reference to the accompanying drawings will be described in detail a preferred embodiment of the substrate manufacturing method according to the present invention. However, the present invention is not limited to the embodiments disclosed below, but will be implemented in various forms, and only the present embodiments are intended to complete the disclosure of the present invention and to those skilled in the art to fully understand the scope of the invention. It is provided to inform you.

The present invention is characterized in that an oxide bead pattern is formed on a substrate using oxide beads as a method of manufacturing a substrate for manufacturing a semiconductor device. As a method of manufacturing a patterned substrate using oxide beads, three embodiments are possible as follows. Of course, various modifications will be possible.

First embodiment  (Substrate Manufacturing Method Using Selective Bonding Force)

2 is a flowchart illustrating a process of manufacturing a substrate using a selective bonding force according to the first embodiment of the present invention. 3 (a) to 3 (c) are cross-sectional views illustrating an example of manufacturing a substrate using a selective bonding force according to the first embodiment of the present invention.

Referring to FIGS. 2 to 3C, first, as shown in FIG. 3A, a first binder pattern having a selective bonding force at a position where an oxide bead pattern 340 is to be formed on the substrate 310 is formed. 320 is formed (S210). The substrate 310 uses any one of sapphire, lithium aluminum oxide (LiAlO ₂ ), and magnesium oxide (MgO). The refractive index of the oxide bead 330 is 1.2 to 2.0, and SiO ₂ , Al ₂ O ₃ , TiO ₂ , ZrO ₂ , Y ₂ O ₃ -ZrO ₂ , CuO, Cu ₂ O, Ta ₂ O ₅ , PZT (Pb (Zr, Ti) O ₃ ), Nb ₂ O ₅ , Fe ₃ O ₄ , Fe ₂ O ₃ And GeO ₂ consisting of one or more selected from those used. The oxide bead 330 is preferably spherical, and the diameter of the oxide bead 330 is 0.1 to 10 μm. The density, size, etc. of the first binder pattern 320 may be adjusted to numerical values that maximize light output through simulation. The method of forming the first binder pattern 320 may be implemented through a photolithography process or a nano imprint process.

A method of forming the first binder pattern 320 by a photolithography process is as follows. First, a first binder and a resist film are formed on the substrate 310. Exposure and development are performed using a photo mask containing information of the oxide bead pattern 340 to be formed. Then, the first binder pattern 320 is formed through an etching process.

The method of forming the first binder pattern 320 by the nanoimprint process is as follows. After manufacturing a nanoimprint mask corresponding to the position where the oxide bead pattern 340 is to be formed, a first binder is applied to the nanoimprint mask. The nanoimprint mask coated with the first binder is printed on the substrate 310 to form the first binder pattern 320.

Next, the second binder having a larger bonding force with the first binder than with the substrate 310 is coated on the oxide bead (330) (S220). In addition, the oxide binder 330 coated with the second binder is coated on the substrate 310 (S230). The oxide bead 330 coated with the second binder may be applied to the substrate 310 by using a method such as spin coating. Coating the oxide bead 330 with a second binder having a larger bond to the first binder than the bond to the substrate 310 may result in the oxide beads being coated with the first binder pattern 320 as shown in FIG. This is only for positioning. In this case, the smaller the bonding force between the second binder and the substrate 310 is, the larger the smaller the bonding force is, and the larger the bonding force between the second binder and the first binder is, the more preferable. When the second binder having the selective binding force is coated on the oxide bead 330, the oxide bead 330 applied to the exposed portion of the surface of the substrate 310 may easily fall due to the difference in the bonding force. In addition, the oxide beads 330 coated on the portion where the first binder pattern 320 is formed do not fall off due to the bonding force between the second binder coated on the oxide beads 330 and the first binder, and are formed on the first binder pattern 320. Will remain.

However, when the side surface of the first binder pattern 320 and the side surface of the second binder is coated with the oxide bead 330 is bonded, the oxide bead 330 on the exposed portion of the substrate 310, that is, the unwanted portion Should be prevented. Therefore, in order to prevent the side surface of the first binder pattern 320 and the oxide bead 330 from being bonded, the height of the first binder pattern 320 from the substrate 310 is smaller than the radius of the spherical oxide bead 330. desirable. As such, if the height of the first binder pattern 320 from the substrate 310 is smaller than the radius of the spherical oxide beads 330, the possibility that the side surfaces of the oxide beads and the first binder pattern 320 are combined may be reduced. do.

The substrate 310 is heat-treated to bond the oxide beads 340 to the substrate 310 (S240). The temperature during heat treatment of the substrate 310 is performed in the range of 500 to 1400 ° C, preferably in the range of 800 to 1200 ° C. When the substrate 310 is heat-treated as described above, the first binder pattern 320 formed on the substrate 310 and the second binder coated on the oxide bead 330 are removed. Accordingly, as shown in FIG. 3C, the oxide beads 340 are bonded to the substrate 310 to form a substrate on which the patterned oxide beads are formed. Therefore, when the substrate is manufactured in the same manner as in the present embodiment, it is possible to manufacture the substrate having good light extraction efficiency.

4 is a flowchart illustrating another process of manufacturing a substrate using a selective bonding force according to the first embodiment of the present invention. 5 (a) to 5 (c) are cross-sectional views illustrating another example of manufacturing a substrate by using a selective bonding force according to the first embodiment of the present invention. FIG. 4 is a patterned by coating an oxide bead between the first binder patterns by coating a second binder having a high bonding strength with the substrate and a small bonding strength with the first binder, as described in the substrate manufacturing method shown in FIG. 2. A method of manufacturing a substrate having formed oxide beads is shown.

Referring to FIGS. 4 to 5C, first, a first binder pattern 520 is formed in a region except for a position where the oxide bead pattern 540 is to be formed on the substrate 510 (S410). As described above in the substrate manufacturing method shown in FIG. 2, the substrate 510 uses any one of sapphire, lithium aluminum oxide, and magnesium oxide. The oxide beads 530 have a refractive index of 1.2 to 2.0, and SiO ₂ , Al ₂ O ₃ , TiO ₂ , ZrO ₂ , Y ₂ O ₃ -ZrO ₂ , CuO, Cu ₂ O, Ta ₂ O ₅ , PZT (Pb (Zr, Ti) O ₃ ), Nb ₂ O ₅ , Fe ₃ O ₄ , Fe ₂ O ₃ And GeO ₂ consisting of one or more selected from those used. The oxide bead 530 is preferably spherical, in which case the diameter of the oxide bead 530 is 0.1 to 10 μm. The density, size, etc. of the first binder pattern 520 may be adjusted to numerical values that maximize light output through simulation. In addition, the method of forming the first binder pattern 520 may be implemented through a photolithography process or a nano imprint process. The photolithography process or the nanoimprint process is similar to the above description.

Next, a second binder having a smaller bonding force with the first binder than with the substrate 510 is coated on the oxide bead (530) (S420). In addition, the oxide binder 530 coated with the second binder is coated on the substrate 510 (S430). As described above, when the second binder having a smaller bonding force with the first binder than the bonding force with the substrate 510 is coated on the oxide bead 530 and coated on the substrate 510, the method described in the substrate manufacturing method illustrated in FIG. In contrast, the oxide beads 530 applied on the first binder pattern 520 easily come off. On the other hand, the oxide beads 530 applied on the substrate 510 do not fall and remain on the substrate 510 as shown in FIG. 5 (b).

The substrate 510 is heat-treated to bond the oxide beads 540 to the substrate 510 (S440). As described above in the substrate manufacturing method shown in FIG. 2, the temperature at the time of heat treatment of the substrate 510 is performed in the range of 500 to 1400 ° C., preferably in the range of 800 to 1200 ° C. When the substrate 510 is heat treated as described above, the first binder pattern 520 formed on the substrate 510 and the second binder coated on the oxide bead 530 are removed. Accordingly, as shown in FIG. 5C, the oxide beads 540 are bonded to the substrate 510, thereby manufacturing a substrate on which the patterned oxide beads are formed. Therefore, also in the case of the substrate manufacturing method shown in FIG. 4, like the substrate manufacturing method shown in FIG.

Second embodiment  (Fluid Maniscus  Substrate manufacturing method using

6 is a flowchart illustrating a process of manufacturing a substrate using a meniscus of a fluid according to a second embodiment of the present invention. 7 (a) to 7 (e) are cross-sectional views illustrating an example of manufacturing a substrate using a meniscus of fluid according to the second embodiment of the present invention.

6 to 7E, first, a solution 750 in which the oxide beads 740 are dispersed is prepared (S610). The oxide beads 740 have a refractive index of 1.2 to 2.0, and SiO ₂ , Al ₂ O ₃ , TiO ₂ , ZrO ₂ , Y ₂ O ₃ -ZrO ₂ , CuO, Cu ₂ O, Ta ₂ O ₅ , PZT (Pb ( Zr, Ti) O ₃ ), Nb ₂ O ₅ , Fe ₃ O ₄ , Fe ₂ O ₃ And one consisting of at least one selected from GeO ₂ is used. The oxide bead 740 is preferably spherical, wherein the diameter of the oxide bead 740 is from 0.1 to 10 μm. Water may be used as a solvent for dispersing the oxide beads 740.

Next, as illustrated in FIG. 7A, a pattern 720 is formed on the substrate 710 (S620). The pattern 720 may be a resist pattern through an exposure and development process after applying a resist film on the substrate 710. The density, size, etc. of the pattern 720 can be adjusted to numerical values that maximize light output through simulation. As shown in FIG. 7B, the temporary structure 730 is installed on the substrate 710 to form the micro channel 725 (S630). The temporary structure 730 may use polydimethylsiloane (PDMS).

Next, the solution 750 and the gas 760 in which the oxide beads 740 are dispersed are alternately injected into the micro channel 725 (S640). As shown in FIG. 7C, when the solution 750 and the gas 760 in which the oxide beads 740 are dispersed are alternately injected, the solution 750 and the gas 760 are disposed on the substrate 710. The oxide beads 740 are assembled between the patterns 720 and fixed to the substrate 710 by the meniscus generated at the interface. When the oxide beads 740 are fixed to the substrate 710, the injection of the solution 750 and the gas 760 in which the oxide beads 740 are dispersed is stopped and the temporary structure 730 is removed. This state is shown in Fig. 7 (d).

The substrate 710 is thermally treated to bond the oxide beads 770 to the substrate 710 (S650). As described above in the substrate manufacturing method shown in FIG. 2, the temperature when the substrate 710 is heat treated is performed in the range of 500 to 1400 ° C., preferably in the range of 800 to 1200 ° C. FIG. When the substrate 710 is heat treated in this manner, the pattern 720 formed on the substrate 710 is removed. Thus, as shown in FIG. 7E, the oxide beads 770 are bonded to the substrate 710 to form a substrate on which patterned oxide beads are formed. Therefore, also in the case of the substrate manufacturing method shown in FIG. 6, similarly to the substrate manufacturing method shown in FIG.

8 is a flowchart illustrating another process of manufacturing a substrate using a meniscus of fluid according to a second embodiment of the present invention. 9 (a) to 9 (e) are cross-sectional views illustrating another example of manufacturing a substrate using a meniscus of fluid according to the second embodiment of the present invention.

8 to 9E, first, a solution 930 in which the oxide beads 940 are dispersed is prepared (S810). The oxide beads 940 have a refractive index of 1.2 to 2.0, and SiO ₂ , Al ₂ O ₃ , TiO ₂ , ZrO ₂ , Y ₂ O ₃ -ZrO ₂ , CuO, Cu ₂ O, Ta ₂ O ₅ , PZT (Pb ( Zr, Ti) O ₃ ), Nb ₂ O ₅ , Fe ₃ O ₄ , Fe ₂ O ₃ And one consisting of at least one selected from GeO ₂ is used. The oxide beads 940 are preferably spherical, in which case the diameter of the oxide beads 940 is from 0.1 to 10 μm. Water may be used as a solvent for dispersing the oxide beads 940.

Next, as illustrated in FIG. 9A, the pattern 920 is formed on the substrate 910 (S820). The pattern 920 may be a resist pattern through an exposure and development process after applying a resist film on the substrate 910. The density, size, etc. of the pattern 920 may be adjusted to numerical values that maximize light output through simulation.

Next, as shown in FIGS. 9B and 9C, the process of dipping and removing the substrate 910 on which the pattern 920 is formed into the solution 930 in which the oxide beads 940 are dispersed is performed once. The above is performed (S830). When the substrate 910 on which the pattern 920 is formed is immersed in the solution 930 in which the oxide beads 940 are dispersed and taken out, the oxide beads 940 meet the substrate 910 on the surface of the solution 930 in which the oxide beads 940 are dispersed. The oxide beads 940 are assembled between the patterns 920 and fixed to the substrate 910 by the meniscus generated at the interface between the solution 930 in which the oxide beads 940 are dispersed and the air at the portion. By repeating the above process, the oxide beads 940 may be fixed between the patterns 920.

As shown in FIG. 9D, when the oxide beads 940 are fixed to the substrate 910, the substrate 910 is removed from the solution 950 in which the oxide beads 940 are dispersed.

The substrate 910 is thermally treated to bond the oxide beads 950 to the substrate 910 (S650). As described above in the substrate manufacturing method shown in FIG. 2, the temperature during heat treatment of the substrate 910 is performed in the range of 500 to 1400 ° C., preferably in the range of 800 to 1200 ° C. FIG. When the substrate 910 is heat-treated as described above, the pattern 920 formed on the substrate 910 is removed. Accordingly, as shown in FIG. 9E, the oxide beads 950 are bonded to the substrate 910 to form a substrate on which patterned oxide beads are formed. Therefore, also in the case of the substrate manufacturing method shown in FIG. 8, similar to the substrate manufacturing method shown in FIG.

The patterns 720 and 920 formed on the substrates 710 and 910 have been described and described in the case of physical irregularities due to the photosensitive material. However, the patterns 720 and 920 are not limited thereto and may be surface energy patterns such as hydrophobicity / hydrophilicity. However, when the oxide beads 740 and 940 are hydrophilic in step S640 or S830, the oxide beads 740 and 940 are located only on the hydrophilic pattern and are not positioned on the hydrophobic pattern. On the contrary, if the oxide beads 740 and 940 are hydrophobic in step S640 or S830, the oxide beads 740 and 940 are located only on the hydrophobic pattern and not on the hydrophilic pattern. In this manner, the oxide beads 740 and 940 may be patterned on the substrates 710 and 910, and the substrate may be manufactured by patterning the oxide beads by heat treatment as in operation S650 or S840.

Third embodiment  (sacrifice Polymer Bead  Substrate manufacturing method using

10 is a flowchart illustrating a process of manufacturing a substrate using sacrificial polymer beads according to a third embodiment of the present invention. 11A to 11D are cross-sectional views illustrating a method of manufacturing a substrate using sacrificial polymer beads according to a third embodiment of the present invention.

Referring to FIGS. 10 to 11 (d), first, a temporary structure 1120 is installed as shown in FIG. 11 (a) so that the micro channel 1130 is formed on the substrate 1110 (S1010). The temporary structure 1120 may use polydimethylsiloane (PDMS). In this case, the microchannel 1130 may be formed such that the bead mixtures 1140 and 1150 to be described later may be assembled into a mono-layer. When the bead mixture 1140, 1150 is assembled into two or more layers in the microchannel 1130, it is not easy to manufacture the substrate as shown in FIG. 1 (b), and the polymer beads 1140 are removed in the steps to be described later. Is not easy. Therefore, the temporary structure 1120 is preferably installed slightly larger than the size of the bead mixture (1140, 1150).

Next, the bead mixture is formed by mixing the oxide beads 1150 and the polymer beads 1140 (S1020). The oxide beads 940 have a refractive index of 1.2 to 2.0, and SiO ₂ , Al ₂ O ₃ , TiO ₂ , ZrO ₂ , Y ₂ O ₃ -ZrO ₂ , CuO, Cu ₂ O, Ta ₂ O ₅ , PZT (Pb ( Zr, Ti) O ₃ ), Nb ₂ O ₅ , Fe ₃ O ₄ , Fe ₂ O ₃ And one consisting of at least one selected from GeO ₂ is used. The oxide beads 940 are preferably spherical, in which case the diameter of the oxide beads 940 is from 0.1 to 10 μm.

Next, the bead mixture (1140, 1150) is injected into the micro channel 1130 (S1030). Once the bead mixtures 1140, 1150 are randomly assembled into the microchannels 1130 as shown in FIG. 11 (b), the temporary structures 1120 are removed.

Next, the polymer bead 1140 is removed (S1040). When the temporary structure 1120 is removed, when the polymer beads 1140 are removed through a plasma process, only the oxide beads 1150 remain on the substrate 1110 as shown in FIG. 11C. A gas plasma containing chlorine (Cl) may be used to remove the polymer beads 1140.

The substrate 1110 is thermally treated to bond the oxide beads 1160 to the substrate 1110 (S1050). As described above in the substrate manufacturing method shown in FIG. 2, the temperature when the substrate 1110 is heat treated is performed in the range of 500 to 1400 ° C., preferably in the range of 800 to 1200 ° C. FIG. When the substrate 1110 is heat-treated as described above, the oxide beads 1160 are bonded to the substrate 1110 as shown in FIG. 9E, thereby manufacturing a substrate on which patterned oxide beads are formed. Therefore, in the case of the substrate manufacturing method shown in FIG. 10, similarly to the substrate manufacturing method shown in FIG. 2, it is possible to manufacture a substrate having good light extraction efficiency.

Although the preferred embodiments of the present invention have been shown and described above, the present invention is not limited to the specific preferred embodiments described above, and the present invention belongs to the present invention without departing from the gist of the present invention as claimed in the claims. Various modifications can be made by those skilled in the art, and such changes are within the scope of the claims.

FIG. 1A is a cross-sectional view of a light emitting diode LED formed on a patterned substrate, and FIG. 1B is a view of a substrate on which a pattern is formed.

2 is a flowchart illustrating a process of manufacturing a substrate using a selective bonding force according to the first embodiment of the present invention.

3 (a) to 3 (c) are cross-sectional views illustrating an example of manufacturing a substrate using a selective bonding force according to the first embodiment of the present invention.

4 is a flowchart illustrating another process of manufacturing a substrate using a selective bonding force according to the first embodiment of the present invention.

5 (a) to 5 (c) are cross-sectional views illustrating another example of manufacturing a substrate by using a selective bonding force according to the first embodiment of the present invention.

6 is a flowchart illustrating a process of manufacturing a substrate using a meniscus of fluid according to a second embodiment of the present invention.

7 (a) to 7 (e) are cross-sectional views illustrating an example of manufacturing a substrate using a meniscus of fluid according to the second embodiment of the present invention.

8 is a flowchart illustrating another process of manufacturing a substrate using a meniscus of fluid according to a second embodiment of the present invention.

9 (a) to 9 (e) are cross-sectional views illustrating another example of manufacturing a substrate using a meniscus of fluid according to the second embodiment of the present invention.

10 is a flowchart illustrating a process of manufacturing a substrate using sacrificial polymer beads according to a third embodiment of the present invention.

11A to 11D are cross-sectional views illustrating a method of manufacturing a substrate using sacrificial polymer beads according to a third embodiment of the present invention.

Claims (16)

Preparing a solution in which oxide beads are dispersed; Forming a pattern on the substrate; Installing a temporary structure above the substrate such that microchannels are formed on the substrate; Immobilizing the oxide beads on the substrate by alternately injecting a solution and a gas in which the oxide beads are dispersed into the micro channel; And heat treating the substrate. Preparing a solution in which oxide beads are dispersed; Forming a pattern on the substrate; Fixing the oxide beads on the substrate by immersing the patterned substrate in a solution in which the oxide beads are dispersed and removing the substrate at least once; And heat treating the substrate. Installing a temporary structure above the substrate such that microchannels are formed on the substrate; Mixing the oxide beads and the polymer beads to form a bead mixture; Injecting the bead mixture into the microchannels to assemble the oxide beads and the polymer beads on the substrate; Separating the temporary structure from the substrate; Removing the polymer beads; And heat treating the substrate. The method according to any one of claims 1 to 3, The substrate is a substrate manufacturing method with a pattern, characterized in that any one of sapphire, lithium aluminum oxide and magnesium oxide. The method according to any one of claims 1 to 3, The refractive index of the oxide bead is a substrate manufacturing method with a pattern, characterized in that 1.2 to 2.0. The method according to any one of claims 1 to 3, The oxide beads are SiO ₂ , Al ₂ O ₃ , TiO ₂ , ZrO ₂ , Y ₂ O ₃ -ZrO ₂ , CuO, Cu ₂ O, Ta ₂ O ₅ , PZT (Pb (Zr, Ti) O ₃ ), Nb ₂ O ₅ , Fe ₃ O ₄ , Fe ₂ O ₃ And GeO _{2 A} substrate manufacturing method with a pattern, characterized in that consisting of at least one selected from GeO ₂ . The method according to any one of claims 1 to 3, The oxide bead is a spherical substrate manufacturing method, characterized in that the pattern is characterized in that. The method according to any one of claims 1 to 3, The oxide bead has a diameter of 0.1 to 10 μm patterned substrate manufacturing method characterized in that. The method according to any one of claims 1 to 3, Heat-treating the substrate is a substrate manufacturing method with a pattern, characterized in that performed in the range of 500 to 1400 ℃. delete The method of claim 3, Removing the polymer beads is a method of manufacturing a substrate with a pattern, characterized in that using a plasma. The method according to claim 1 or 3, The temporary structure is a substrate manufacturing method having a pattern, characterized in that consisting of PDMS (polydimethylsiloane). The method according to claim 1 or 2, The pattern is a substrate manufacturing method with a pattern, characterized in that the physical irregularities by the resist (resist). The method according to claim 1 or 2, The pattern is a substrate manufacturing method with a pattern characterized in that the surface energy pattern. The method of claim 14, The surface energy pattern is a substrate manufacturing method with a pattern, characterized in that the hydrophobic or hydrophilic pattern. The method of claim 3, Installing the temporary structure above the substrate to form a micro channel on the substrate, And the temporary structure is installed so that the oxide beads and the polymer beads can be assembled into one layer.

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