KR100934729B1 - Electroless Tin Plating Solution Impurity Removal Apparatus and Method - Google Patents

Electroless Tin Plating Solution Impurity Removal Apparatus and Method Download PDF

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KR100934729B1
KR100934729B1 KR1020070108846A KR20070108846A KR100934729B1 KR 100934729 B1 KR100934729 B1 KR 100934729B1 KR 1020070108846 A KR1020070108846 A KR 1020070108846A KR 20070108846 A KR20070108846 A KR 20070108846A KR 100934729 B1 KR100934729 B1 KR 100934729B1
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tin plating
electroless tin
plating solution
electroless
electrode plate
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KR1020070108846A
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KR20090043146A (en
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이강
홍석표
장종관
박광자
최민정
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(주)화백엔지니어링
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Priority to JP2008109128A priority patent/JP2009108399A/en
Priority to CNA2008100984151A priority patent/CN101423939A/en
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601Process or apparatus
    • C23C18/1633Process of electroless plating
    • C23C18/1689After-treatment
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601Process or apparatus
    • C23C18/1619Apparatus for electroless plating
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601Process or apparatus
    • C23C18/1619Apparatus for electroless plating
    • C23C18/1628Specific elements or parts of the apparatus
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601Process or apparatus
    • C23C18/1633Process of electroless plating
    • C23C18/1675Process conditions
    • C23C18/1683Control of electrolyte composition, e.g. measurement, adjustment
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31Coating with metals

Abstract

본 발명에 따른 무전해 주석도금액의 불순물 제거장치는, 상호 연통되도록 연속적으로 배치된 복수 개의 격실과, 상기 격실 내에 배치되며 양극판 및 음극판을 포함하는 불순물제거부와, 상기 불순물제거부에 전원을 공급하기 위한 전원공급부를 포함하며, 본 전원공급부로부터 공급되는 전류의 전류밀도는, 0.05 A/d㎡ 이상 10 A/d㎡ 이하인 것을 특징으로 한다. 한편, 본 발명에 따른 무전해 주석도금액의 불순물 제거방법은, 상호 연통되도록 연속적으로 배치된 복수 개의 격실 내로 무전해 주석도금액을 유입하는 단계와, 상기 격실 내에 배치되며 양극판 및 음극판을 포함하는 불순물제거부를 통해 상기 무전해 주석도금액을 통과시키는 단계를 포함하며, 상기 불순물제거부에 공급되는 전류의 전류밀도는, 0.05 A/d㎡ 이상 10 A/d㎡ 이하인 것을 특징으로 한다.An impurity removing apparatus of an electroless tin plating liquid according to the present invention includes a plurality of compartments continuously arranged to communicate with each other, an impurity removing unit disposed in the compartment and including a positive electrode plate and a negative electrode plate, and a power supply to the impurity removing unit. And a power supply for supplying, wherein the current density of the current supplied from the power supply is 0.05 A / dm 2 or more and 10 A / dm 2 or less. On the other hand, the impurity removal method of the electroless tin plating solution according to the present invention, the step of introducing an electroless tin plating solution into a plurality of compartments that are continuously arranged to be in communication with each other, and disposed in the compartment and comprises a positive electrode plate and a negative electrode plate And passing the electroless tin plating solution through the impurity removing unit, wherein the current density of the current supplied to the impurity removing unit is 0.05 A / dm 2 or more and 10 A / dm 2 or less.

이에 의해, 최소한의 설비로써 무전해 주석 도금용액 내의 구리 이온 및 안티몬을 제거할 수 있으며, 이를 다시 재사용가능하게 할 수 있다.This makes it possible to remove copper ions and antimony in the electroless tin plating solution with a minimum of equipment, and to make it reusable again.

Description

무전해 주석도금액 불순물 제거장치 및 방법{APPARATUS AND METHOD OF REMOVING IMPURITIES IN ELECTROLESS TINNING SOLUTION} Electroless Tin Plating Solution Impurity Removal Apparatus and Method {APPARATUS AND METHOD OF REMOVING IMPURITIES IN ELECTROLESS TINNING SOLUTION}

본 발명은 불순물 제거장치 및 그 방법에 관한 것으로서, 보다 상세하게는 전기 에너지의 공급을 요하지 않는 무전해 도금에 이용되는 도금액의 불순물을 제거하기 위한 제거장치 및 그 방법에 관한 것이다. BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an impurity removal device and a method thereof, and more particularly, to a removal device and a method for removing impurities in a plating liquid used for electroless plating that does not require the supply of electrical energy.

무전해 도금은 화학도금이고도 하는데, 도금용액 성분 중에 환원제 성분이 포함되어 있어, 상기 환원제에 의해 금속이 환원되면서 석출되는 원리를 이용한 도금 방식이다.Electroless plating is also a chemical plating, the plating solution component contains a reducing agent component, the plating method using the principle that the metal is precipitated while the metal is reduced by the reducing agent.

무전해 주석도금액은 치오우레아를 함유하는 산성도금액으로, 구리 또는 구리합금 등의 산화를 방지하기 위한 목적과 전자부품의 솔더링 특성을 향상 시키기 위한 목적으로 도금하는 도금액으로서, 구리와의 치환도금으로 무전해 주석도금이 이루어진다. The electroless tin plating solution is an acid plating solution containing thiourea, and is a plating solution for plating for the purpose of preventing oxidation of copper or copper alloy and for improving the soldering characteristics of electronic parts. Electroless tin plating is done.

이러한 치환도금 과정에서 구리가 이온으로 용해되어 이온화된 구리성분이 필연적으로 도금액에 녹아 들게 된다. In this substitutional plating process, copper is dissolved into ions, and the ionized copper component is inevitably dissolved in the plating solution.

한편, PCB 기판의 난연성 및 가공성을 우수하게 하기 위해, 삼산화 안티몬이 PCB 기판의 성분으로 첨가되는데, 상기 무전해 도금 과정중에 이러한 삼산화 안티몬 역시 용해되어 도금액 내에서 불순물로 존재하게 된다. On the other hand, to improve the flame retardancy and processability of the PCB substrate, antimony trioxide is added as a component of the PCB substrate, and during the electroless plating process, such antimony trioxide is also dissolved and present as impurities in the plating solution.

이러한 불순물의 증가로 인해 도금액의 사용가능 수명을 단축시킬 뿐만 아리라, 도금피막의 성능을 저하시켜 솔더링 특성을 악화시키고 도금 표면의 산화를 촉진시켜 전자부품의 불량을 유발하는 원인으로 작용한다. This increase of impurities not only shortens the usable life of the plating solution, but also deteriorates the soldering properties by degrading the performance of the plating film and promotes oxidation of the plating surface, thereby causing defects in electronic components.

특히, 상기 안티몬은 주석의 환원을 방해하여 주석도금이 원할하게 진행하는 것을 방해하며, 주석도금 피막이 탁하게 되거나 또는 도금이 되지 않는 문제점을 발생시킨다. In particular, the antimony interferes with the reduction of tin, preventing tin plating from proceeding smoothly, and causes a problem that the tin plating film becomes cloudy or not plated.

무전해 주석도금액에서 구리 이온이 축적되면 구리 이온의 용해도 저하에 의한 슬러지 발생의 증가와 함께 무전해 도금된 주석피막에 구리의 함량이 커지면서 솔더링 특성의 저하 및 금속 간 화합물의 성장속도가 빨라져 주석도금제품의 장기 보관성을 저하시키는 문제점이 발생하고 있다. Accumulation of copper ions in the electroless tin plating solution increases sludge generation due to the decrease in solubility of copper ions and increases the copper content in the electroless plated tin film, resulting in a decrease in soldering properties and the growth rate of intermetallic compounds. There is a problem that reduces the long-term storage of the plated product.

이러한 문제점을 해결하기 위해 전처리 단계를 도입하여 삼산화 안티몬이 도금용액에 함유되는 것을 최소화 하는 방법이 제안되고 있으나, 이러한 공정은 전처리단계를 포함하여 비용을 상승시킬 뿐만 아니라, 전처리단계에서 염산 및 황산 같은 강산을 사용함에 따른 환경에 유해한 문제점이 있다.In order to solve this problem, a method of minimizing the inclusion of antimony trioxide in the plating solution has been proposed by introducing a pretreatment step, but this process not only increases the cost including the pretreatment step, There is a problem that is harmful to the environment by using a strong acid.

또한, 도금과정 중에서 발생 되는 구리이온의 경우 이를 제거를 할 수 없는 문제점을 가지고 있다. In addition, the copper ions generated during the plating process has a problem that can not be removed.

따라서, 본 발명은 상기와 같은 문제점을 해결하기 위해 안출된 것으로서, 본 발명의 목적은 무전해 도금용액 내의 구리 이온 및 안티몬 이온을 제거하기 위한 장치 및 방법을 제공하는 것이다.Accordingly, the present invention has been made to solve the above problems, it is an object of the present invention to provide an apparatus and method for removing copper ions and antimony ions in an electroless plating solution.

본 발명의 또 다른 목적은, 최소한의 설비로써 무전해 도금용액 내의 구리 이온 및 안티몬 이온을 제거하고 이를 다시 재사용가능하게 할 수 있는 장치 및 방법을 제공하는 것이다.It is yet another object of the present invention to provide an apparatus and method that can remove copper ions and antimony ions in an electroless plating solution and make them reusable again with minimal equipment.

상기와 같은 본 발명의 목적을 달성하기 위해, 본 발명에 따른 무전해 주석도금액의 불순물 제거장치는, 상호 연통되도록 연속적으로 배치된 복수 개의 격실과, 상기 격실 내에 배치되며 양극판 및 음극판을 포함하는 불순물제거부와, 상기 불순물제거부에 전원을 공급하기 위한 전원공급부를 포함하며, 본 전원공급부로부터 공급되는 전류의 전류밀도는, 0.05 A/d㎡ 이상 10 A/d㎡ 이하인 것을 특징으로 한다.In order to achieve the object of the present invention as described above, the impurity removing device of the electroless tin plating liquid according to the present invention, a plurality of compartments arranged in series to be in communication with each other, and disposed in the compartment comprises a positive electrode plate and a negative electrode plate And an impurity removal unit and a power supply unit for supplying power to the impurity removal unit, wherein the current density of the current supplied from the power supply unit is 0.05 A / dm 2 or more and 10 A / dm 2 or less.

여기서, 상기 양극판은 주석 또는 백금 또는 티타늄 성분 중의 어느 하나를 포함할 수 있다.Here, the positive electrode plate may include any one of tin, platinum or titanium.

또한, 상기 음극판은 주석 또는 백금 또는 티타늄 성분 중의 어느 하나를 포함할 수 있다.In addition, the negative electrode plate may include any one of tin, platinum, or titanium.

바람직하게는, 상기 전원공급부로부터 공급되는 전류밀도는, 0.1 A/d㎡ 이상 1 A/d㎡ 이하이다.Preferably, the current density supplied from the said power supply part is 0.1 A / dm <2> or more and 1 A / dm <2> or less.

또한, 상기 무전해 주석도금액의 불순물 제거장치 내로 무전해 주석도금액을 보충하기 위한 무전해 주석도금액 보충부를 추가적으로 포함할 수 있다.The electroless tin plating solution replenishing unit may be further included to replenish the electroless tin plating solution into the impurity removing device of the electroless tin plating solution.

또한, 상기 무전해 주석도금액 불순물 제거장치와 무전해 도금부 간의 무전해 주석도금액을 순환시키기 위한 무전해 주석도금액 순환부를 추가적으로 포함할 수 있다.In addition, the electroless tin plating solution impurity removal device and the electroless tin plating solution for circulating the electroless tin plating solution between the electroless plating portion may further include a.

한편, 본 발명에 따른 무전해 주석도금액의 불순물 제거방법은, 상호 연통되도록 연속적으로 배치된 복수 개의 격실 내로 무전해 주석도금액을 유입하는 단계와, 상기 격실 내에 배치되며 양극판 및 음극판을 포함하는 불순물제거부를 통해 상기 무전해 주석도금액을 통과시키는 단계를 포함하며, 상기 불순물제거부에 공급되는 전류의 전류밀도는, 0.05 A/d㎡ 이상 10 A/d㎡ 이하인 것을 특징으로 한다.On the other hand, the impurity removal method of the electroless tin plating solution according to the present invention, the step of introducing an electroless tin plating solution into a plurality of compartments that are continuously arranged to be in communication with each other, and disposed in the compartment and comprises a positive electrode plate and a negative electrode plate And passing the electroless tin plating solution through the impurity removing unit, wherein the current density of the current supplied to the impurity removing unit is 0.05 A / dm 2 or more and 10 A / dm 2 or less.

여기서, 상기 양극판은 주석 또는 백금 또는 티타늄 성분 중의 어느 하나를 포함할 수 있다.Here, the positive electrode plate may include any one of tin, platinum or titanium.

또는, 상기 음극판은 주석 또는 백금 또는 티타늄 성분 중의 어느 하나를 포함할 수 있다.Alternatively, the negative electrode plate may include any one of tin, platinum, or titanium components.

바람직하게는, 상기 불순물제거부에 공급되는 전류의 전류밀도는, 0.1 A/d㎡ 이상 1 A/d㎡ 이하일 수 있다.Preferably, the current density of the current supplied to the impurity removing unit may be 0.1 A / dm 2 or more and 1 A / dm 2 or less.

또한, 상기 무전해 주석도금액의 불순물 제거장치 내로 무전해 주석도금액을 보충하기 위한 무전해 주석도금액 보충단계를 추가적으로 포함할 수 있다.The method may further include an electroless tin plating solution replenishing step for replenishing the electroless tin plating solution into the impurity removing device of the electroless tin plating solution.

또한, 상기 무전해 주석도금액을 무전해 도금부로 유출시키는 단계를 추가적 으로 포함할 수 있다.In addition, the step of flowing out the electroless tin plating solution to the electroless plating portion may be further included.

본 발명에 의해, 무전해 주석 도금용액 내의 구리 이온 및 안티몬 이온을 효과적으로 제거할 수 있다.According to the present invention, copper ions and antimony ions in the electroless tin plating solution can be effectively removed.

또한, 최소한의 설비로써 무전해 주석 도금용액 내의 구리 이온 및 안티몬을 제거하고 이를 다시 재사용가능하게 할 수 있다.In addition, with minimal equipment, copper ions and antimony in the electroless tin plating solution can be removed and made available again for reuse.

이하, 첨부된 도면을 참조하여 본 발명의 구성을 상세히 설명하기로 한다. Hereinafter, with reference to the accompanying drawings will be described in detail the configuration of the present invention.

이에 앞서, 본 명세서 및 청구범위에 사용된 용어는 사전적인 의미로 한정 해석되어서는 아니되며, 발명자는 자신의 발명을 최선의 방법으로 설명하기 위해 용어의 개념을 적절히 정의할 수 있다는 원칙에 입각하여, 본 발명의 기술적 사상에 부합되는 의미와 개념으로 해석되어야 한다.Prior to this, the terms used in this specification and claims should not be construed in a dictionary sense, and the inventors may properly define the concept of terms in order to explain their invention in the best way. It should be construed as meaning and concept consistent with the technical spirit of the present invention.

따라서, 본 명세서에 기재된 실시예 및 도면에 도시된 구성은 본 발명의 바람직한 실시예에 불과할 뿐이고, 본 발명의 기술적 사상을 모두 표현하는 것은 아니므로, 본 출원 시점에 있어 이들을 대체할 수 있는 다양한 균등물과 변형예들이 존재할 수 있음을 이해하여야 한다.Therefore, the configurations shown in the embodiments and drawings described herein are only preferred embodiments of the present invention, and do not represent all of the technical idea of the present invention, and various equivalents may be substituted for them at the time of the present application. It is to be understood that water and variations may exist.

도 1 은 본 발명에 따른 무전해 주석도금액의 불순물 제거장치의 개략도이다.1 is a schematic diagram of an apparatus for removing impurities in an electroless tin plating liquid according to the present invention.

본 발명에 따른 무전해 주석도금액의 불순물 제거장치는, 상호 연통되도록 연속적으로 배치된 복수 개의 격실(10, 12)과, 본 격실(10, 12) 내에 배치되며 양 극판(14) 및 음극판(16)을 포함하는 불순물제거부와, 본 불순물제거부에 전원을 공급하기 위한 전원공급부를 포함하며, 본 전원공급부로부터 공급되는 전류의 전류밀도는, 0.05 A/d㎡ 이상 10 A/d㎡ 이하인 것을 특징으로 한다. The impurity removing device of the electroless tin plating liquid according to the present invention includes a plurality of compartments 10 and 12 arranged in series so as to be in communication with each other, and are arranged in the compartments 10 and 12 and have a positive electrode plate 14 and a negative electrode plate ( And a power supply for supplying power to the present impurity removal unit, wherein the current density of the current supplied from the power supply unit is 0.05 A / dm 2 or more and 10 A / dm 2 or less. It is characterized by.

여기서, 상기 격실(10, 12)은 무전해 도금부(50)로부터 유입된 무전해 주석도금액을 수용하고 불순물을 제거하기 위한 구성으로서, 복수 개의 상기 격실(10, 12)이 상호 연통되면서 연속적으로 배치된다.Here, the compartments 10 and 12 are configured to receive the electroless tin plating solution introduced from the electroless plating unit 50 and to remove impurities, and the plurality of compartments 10 and 12 are continuously communicated with each other. Is placed.

바람직하게는, 불순물 제거 대상인 무전해 주석도금액이 상기 격실(10, 12)들을 오버플로우(Overflow) 방식으로 순차적으로 이동하며 상기 도금액 내에 포함된 불순물이 제거되지만, 상기 이동 방식은 이에 한정되는 것은 아니며, 다양한 방법에 의해 상기 격실(10, 12)들 내를 이동하도록 구성될 수 있다.Preferably, the electroless tin plating liquid that is an impurity removal target sequentially moves the compartments 10 and 12 in an overflow manner and impurities contained in the plating liquid are removed, but the transfer method is not limited thereto. Or, may be configured to move within the compartments 10, 12 by a variety of methods.

상기 격실(10, 12)들 내에는 상기 무전해 주석도금액 내에 포함된 구리, 안티몬 이온 등을 제거하기 위한 양극판 및 음극판이 설치된다.The compartments 10 and 12 are provided with a positive electrode plate and a negative electrode plate for removing copper, antimony ions, and the like contained in the electroless tin plating solution.

여기서, 상기 양극판(14) 및 음극판(16)은 주석 또는 백금 또는 티타늄 성분을 포함하는 판 형상 또는 볼 형상의 부재로 마련될 수 있다.Here, the positive electrode plate 14 and the negative electrode plate 16 may be provided as a plate-shaped or ball-shaped member containing tin, platinum or titanium.

상기 양극판(14) 및 음극판(16)은 본 발명에 따른 불순물제거부를 구성하며, 상기 전원공급부(미도시)를 통해 상기 양극판(14) 및 음극판(16)에 전원을 공급함으로써, 도금의 원리를 이용하여 구리, 안티몬 등의 불순물을 제거하게 된다.The positive electrode plate 14 and the negative electrode plate 16 constitute an impurity removing unit according to the present invention, and by supplying power to the positive electrode plate 14 and the negative electrode plate 16 through the power supply (not shown), the principle of plating To remove impurities such as copper and antimony.

상기 전원공급부는 바람직하게는 정류기로 구성되며, 본 정류기를 통해 상기 양극판(14) 및 음극판(16)에 공급되는 전류밀도는 0.05 A/d㎡ 이상 10 A/d㎡ 이하의 범위이다.The power supply unit is preferably composed of a rectifier, the current density supplied to the positive electrode plate 14 and the negative electrode plate 16 through the rectifier is in the range of 0.05 A / dm 2 or more and 10 A / dm 2 or less.

상기 전류밀도 범위의 전류를 공급하기 위한 전압의 범위에는 제한이 없으며, 30V 내지 200V 범위의 전압을 비롯한 다양한 크기의 전압에 의해 상기 전류밀도의 전류를 공급할 수 있다.There is no limitation in the range of the voltage for supplying the current in the current density range, it is possible to supply the current of the current density by a voltage of various sizes, including a voltage in the range of 30V to 200V.

상기 정류기를 통해 상기 전류밀도 범위를 갖는 전류를 상기 불순물제거부에 공급할 경우 무전해 주석 도금액 내에 포함된 구리, 안티몬 등의 이온이 환원되어 상기 음극판(16)의 표면에 석출된다.When the current having the current density range is supplied to the impurity removal unit through the rectifier, ions such as copper and antimony contained in the electroless tin plating solution are reduced to precipitate on the surface of the negative electrode plate 16.

통상 PCB 표면 처리 시 발생될 수 있는 금속의 주 성분은 구리 및 안티몬으로서, 전해질 용액 내에서 저전류를 인가받을 경우 모두 주석보다 먼저 환원되어 석출되는 특성을 가진다.In general, the main components of the metal that can be generated during the PCB surface treatment is copper and antimony, all of which are reduced and precipitated before tin when a low current is applied in the electrolyte solution.

따라서, 이러한 특성을 이용하여 상기 불순물제거부에 저전류를 인가할 경우 구리 및 안티몬 이온을 금속으로 석출할 수 있으며, 석출된 구리 및 안티몬 금속을 상기 무전해 주석도금액으로부터 제거함으로써 궁극적으로 무전해 주석도금액 내에 함유된 불순물을 제거할 수 있다.Therefore, by applying the low current to the impurity removal unit using this property, it is possible to precipitate copper and antimony ions as a metal, and ultimately electroless by removing the deposited copper and antimony metal from the electroless tin plating solution. Impurities contained in the tin plating liquid can be removed.

여기서, 상기 전류밀도가 0.05 A/d㎡ 미만이 될 경우, 상기 구리, 안티몬 등의 이온이 환원되어 석출되는 속도가 느려 신속히 불순물을 제거할 수 없으며, 상기 전류밀도가 10 A/d㎡ 을 초과할 경우에는 무전해 주석도금액 내에 포함된 주석 이온의 석출량이 많아져 주석의 소모량이 커지는 단점이 있다.In this case, when the current density is less than 0.05 A / dm 2, impurities such as copper and antimony are reduced and precipitated so that impurities cannot be removed quickly, and the current density exceeds 10 A / dm 2. In this case, the amount of precipitation of tin ions contained in the electroless tin plating solution increases, which leads to a large consumption of tin.

상기와 같은 이유로 더욱 바람직한 상기 전류밀도의 범위는 0.1 A/d㎡ 이상 1 A/d㎡ 이하의 범위이다.For the same reason as above, the current density is more preferably in the range of 0.1 A / dm 2 or more and 1 A / dm 2 or less.

복수 개의 격실(10)들을 통과한 무전해 주석도금액은 최종적으로 마지막 격 실(12) 내에 수용되고, 상기 마지막 격실(12) 에 설치된 무전해 주석도금액 보충부(30)로부터 도금액을 보충받음으로써, 도금액 내의 구리 및 안티몬 이온 등의 불순물 함량비율을 저하시키게 된다.The electroless tin plating solution that has passed through the plurality of compartments 10 is finally accommodated in the last compartment 12, and the plating solution is replenished from the electroless tin plating solution replenishment unit 30 installed in the last compartment 12. As a result, the content of impurities such as copper and antimony ions in the plating solution is lowered.

비록 상기 무전해 주석도금액 보충부(30)가 상기 마지막 격실(12) 내로 주석 도금액을 보충하는 것으로 설명하였으나, 이에 한정되는 것은 아니며 상기 복수 개의 격실(10, 12) 내의 임의의 위치를 통해 상기 무전해 주석도금액을 보충하도록 구성될 수 있다.Although the electroless tin plating liquid replenishing unit 30 has been described as replenishing the tin plating liquid into the last compartment 12, the present invention is not limited thereto. It may be configured to replenish the electroless tin plating solution.

상기와 같이 불순물의 함량비율이 저하된 무전해 주석도금액은 상기 마지막 격실(12) 외부에 설치된 배관 및 펌프(40-1)에 의해 무전해 도금부(50)로 재순환된다.The electroless tin plating solution in which the content ratio of impurities is reduced as described above is recycled to the electroless plating part 50 by a pipe and a pump 40-1 installed outside the last compartment 12.

여기서, 상기 마지막 격실(12) 외부에 설치된 배관 및 펌프(40-1)와 첫번째 격실(10) 외부에 배치된 배관 및 펌프(40)에 의해 상기 무전해 주석도금부와 상기 격실들(10, 12) 사이에서 무전해 주석도금액이 유입/유출되어 순환되도록 구성된다.Here, the electroless tin plating part and the compartments 10, by the pipe and pump 40-1 installed outside the last compartment 12 and the pipe and pump 40 arranged outside the first compartment 10. 12) The electroless tin plating solution is circulated by the inflow / outflow of the electrolyte.

즉, 상기 첫번째 격실(10) 외부에 배치된 배관 및 펌프(40)에 의해 상기 무전해 주석도금부로부터 주석도금액을 상기 첫번째 격실(10) 내로 유입시키고, 상기 복수 개의 격실(10, 12)들을 통과하는 동안 상기 주석도금액 내에 포함된 구리 및 안티몬 이온을 제거한 이후, 상기 무전해 주석도금액보충부(30)를 통해 도금액을 보충하고 상기 무전해 주석도금부(50)로 재순환시키게 된다.That is, the tin plating liquid flows into the first compartment 10 from the electroless tin plating unit by a pipe and a pump 40 disposed outside the first compartment 10 and the plurality of compartments 10 and 12. After removing the copper and antimony ions contained in the tin plating solution while passing through them, the plating solution is replenished through the electroless tin plating solution replenishment unit 30 and recycled to the electroless tin plating unit 50.

다음으로, 본 발명에 따른 무전해 주석도금액의 불순물 제거장치를 이용하여 구리 및 안티몬 이온을 제거한 실시예를 설명하면 다음과 같다.Next, an embodiment in which copper and antimony ions are removed using an impurity removal device of an electroless tin plating solution according to the present invention will be described.

전류밀도 (ASD)Current Density (ASD) 시간 (hr)Hour (hr) 초기 Sb 농도 (ppm) Initial Sb Concentration (ppm) 초기 Cu 농도 (g/L)Initial Cu Concentration (g / L) 전극 내의 Sb 농도Sb concentration in the electrode 전극 내의 Cu농도Cu concentration in the electrode 최종Sb 농도(ppm)Final Sb Concentration (ppm) 최종Cu 농도(g/L)Final Cu concentration (g / L) 0.050.05 1212 200200 0.50.5 3 %3% 6 %6% 150150 0.40.4 2424 200200 0.50.5 5 %5% 3 %3% 100100 0.40.4 0.100.10 1212 200200 0.50.5 10 %10% 15 %15% 8080 0.30.3 2424 200200 0.50.5 8 %8 % 14 %14% 5050 0.30.3 0.500.50 1212 100100 0.50.5 7 %7% 20 %20% 8080 0.10.1 2424 100100 0.50.5 8 %8 % 14 %14% 3030 0.20.2 1.001.00 1212 100100 0.50.5 6 %6% 16 %16% 6060 0.10.1 2424 100100 0.50.5 5 %5% 18 %18% 3030 0.10.1

실시예 1Example 1

표 1 을 참조하면, 무전해 주석도금액을 복수 개의 격실 내로 이송시키지 않고, 하나의 격실 내에 수용한 상태에서 0.05 A/d㎡ 내지 1.00 A/d㎡ 전류밀도 범위의 전류를 12시간 또는 24시간 동안 양/음극판에 인가하였다.Referring to Table 1, a current of 0.05 A / dm 2 to 1.00 A / dm 2 current density range of 12 hours or 24 hours without being transferred into a plurality of compartments without being transferred into a plurality of compartments was stored. Was applied to the positive / negative plate.

상기 전류 인가 후 양/음극판 상에 석출된 금속피막을 전자현미경을 이용하여 성분분석 하였다.After the application of the current, the metal film deposited on the positive / negative plate was subjected to component analysis using an electron microscope.

상기 전류밀도 0.05 A/d㎡ 의 전류를 12 시간 인가한 경우의 예를 들면, 초기의 안티몬이온의 농도는 200 ppm 이었고, 구리이온의 농도는 0.5g/L 였다.For example, when the current having a current density of 0.05 A / dm 2 was applied for 12 hours, the initial concentration of antimony ion was 200 ppm, and the concentration of copper ion was 0.5 g / L.

12 시간이 경과한 이후 양/음극판 내의 안티몬과 구리이온의 농도는 각각 3%, 6% 였고, 최종 용액 내의 안티몬이온 및 구리이온의 농도는 각각 150ppm, 0.4g/L 였다.After 12 hours, the concentrations of antimony and copper ions in the positive / cathode plates were 3% and 6%, respectively, and the concentrations of antimony and copper ions in the final solution were 150 ppm and 0.4 g / L, respectively.

따라서, 안티몬 이온의 경우 50ppm 이, 구리이온의 경우 0.1g/L 감소한 것을 알 수 있다.Therefore, it can be seen that 50 ppm of antimony ions and 0.1 g / L of copper ions decreased.

실시예 2Example 2

도 1 에 도시된 무전해 주석도금액의 불순물 제거장치를 통해 전류밀도 0.5 A/d㎡ 전류를 인가하고, 도금액을 분당 10L 의 이송속도로 이송시켰다.A current density of 0.5 A / dm 2 was applied through the impurity removal device of the electroless tin plating liquid shown in FIG. 1, and the plating liquid was transferred at a feed rate of 10 L per minute.

도금액 내의 초기 안티몬 이온의 농도는 200ppm 이었으며, 구리 이온의 농도는 1 g/L 였다. The initial concentration of antimony ions in the plating solution was 200 ppm, and the concentration of copper ions was 1 g / L.

24시간 동안의 불순물 제거과정을 거친 후 측정한 결과, 안티몬 이온의 경우 약 90% 정도 제거되었으며, 구리 이온의 경우 약 50%가 제거되었다.After 24 hours of impurity removal, about 90% of antimony ions were removed and about 50% of copper ions were removed.

이하, 본 발명에 따른 무전해 주석도금액의 불순물 제거방법을 설명하면 다음과 같다.Hereinafter, a method of removing impurities in the electroless tin plating solution according to the present invention will be described.

먼저, 상기 무전해 주석도금부(50)로부터 이송된 주석도금액을 상기 복수 개의 격실(10) 내로 유입시키고, 이후 본 격실들(10) 내에 배치된 양극판 및 음극판에 0.05 A/d㎡ 이상 10 A/d㎡ 이하, 더욱 바람직하게는 0.1 A/d㎡ 이상 1 A/d㎡ 이하 범위의 전류밀도를 가지는 전류를 인가하게 된다. First, the tin plating liquid transferred from the electroless tin plating unit 50 is introduced into the plurality of compartments 10, and then, in the positive and negative plates disposed in the compartments 10, 0.05 A / dm 2 or more. A current having a current density in the range of A / dm 2 or less, more preferably 0.1 A / dm 2 or more and 1 A / dm 2 or less is applied.

상기 전류밀도 범위의 전류가 인가된 복수 개의 격실(10)을 통과하는 동안 주석도금액 내에 포함된 안티몬 이온 및 구리 이온이 양/음극판 상에 석출되어 제거된다.Antimony ions and copper ions contained in the tin plating solution are precipitated and removed on the positive / negative electrode while passing through the plurality of compartments 10 to which current in the current density range is applied.

이후, 최종 격실(12)에서 무전해 주석도금액보충부(30)에 의해 무전해 주석도금액을 보충하게 되고, 최종적으로 상기 무전해 주석도금부(50)로 유출시켜 순환되도록 한다. Thereafter, the electroless tin plating solution replenishment unit 30 is replenished by the electroless tin plating solution replenishing unit 30 in the final compartment 12 and finally flows out to the electroless tin plating unit 50 to be circulated.

이상, 본 발명은 비록 한정된 실시예와 도면에 의해 설명되었으나, 본 발명의 기술적 사상은 이러한 것에 한정되지 않으며, 본 발명이 속하는 기술분야에서 통상의 지식을 가진 자에 의해, 본 발명의 기술적 사상과 하기 될 특허청구범위의 균등범위 내에서 다양한 수정 및 변형 실시가 가능할 것이다.As mentioned above, although the present invention has been described by way of limited embodiments and drawings, the technical idea of the present invention is not limited thereto, and a person having ordinary skill in the art to which the present invention pertains, Various modifications and variations may be made without departing from the scope of the appended claims.

첨부의 하기 도면들은, 후술하는 발명의 상세한 설명과 함께 본 발명의 기술적 사상을 이해시키기 위한 것이므로, 본 발명은 하기 도면에 도시된 사항에 한정 해석되어서는 아니 된다.Since the accompanying drawings are for understanding the technical spirit of the present invention together with the detailed description of the following invention, the present invention should not be construed as limited to the matters shown in the following drawings.

도 1 은 본 발명에 따른 무전해 주석도금액의 불순물 제거장치의 개략도이다.1 is a schematic diagram of an apparatus for removing impurities in an electroless tin plating liquid according to the present invention.

* 도면의 주요 부분에 대한 부호의 설명 *Explanation of symbols on the main parts of the drawings

10: 격실 14: 양극판10: compartment 14: bipolar plate

16: 음극판 30: 무전해 주석도금액 보충부16: negative electrode plate 30: electroless tin plating solution

40, 40-1: 무전해 주석도금액 순환부 40, 40-1: circulating electroless tin plating solution

Claims (12)

상호 연통되도록 연속적으로 배치된 복수 개의 격실과;A plurality of compartments continuously arranged to communicate with each other; 상기 각 격실 내에 각각 배치되며 양극판 및 음극판을 포함하는 불순물제거부와;An impurity removal unit disposed in each of the compartments and including a positive electrode plate and a negative electrode plate; 상기 불순물제거부에 전원을 공급하기 위한 전원공급부를 포함하는 무전해 주석도금액의 불순물 제거장치로서,An impurity removal device of an electroless tin plating solution including a power supply unit for supplying power to the impurity removal unit. 상기 양극판과 음극판은 주석 또는 백금 또는 티타늄 성분 중의 어느 하나를 포함하며,The positive electrode plate and the negative electrode plate includes any one of tin or platinum or titanium, 상기 전원공급부로부터 공급되는 전류의 전류밀도는 0.05 A/d㎡ 이상 10 A/d㎡ 이하이며,The current density of the current supplied from the power supply is 0.05 A / dm 2 or more and 10 A / dm 2 or less, 상기 무전해 주석도금액의 불순물 제거장치 내로 무전해 주석도금액을 보충하기 위한 무전해 주석도금액 보충부와,An electroless tin plating solution replenishment unit for replenishing the electroless tin plating solution into the impurity removing apparatus of the electroless tin plating solution; 상기 무전해 주석도금액 불순물 제거장치와 무전해 도금부 간의 무전해 주석도금액을 순환시키기 위한 무전해 주석도금액 순환부 포함하며,An electroless tin plating solution circulating unit for circulating the electroless tin plating solution between the electroless tin plating solution impurity removing device and the electroless plating unit, 상기 무전해 주석도금액은 상기 상호 연통되도록 연속적으로 배치된 복수 개의 격실을 이동하며 분순물이 제거되는 것을 특징으로 하는 무전해 주석도금액의 불순물 제거장치.The electroless tin plating liquid is impurity removal device of the electroless tin plating liquid, characterized in that the impurities are removed while moving a plurality of compartments arranged in series to communicate with each other. 삭제delete 삭제delete 제 1 항에 있어서,The method of claim 1, 상기 전원공급부로부터 공급되는 전류밀도는,The current density supplied from the power supply unit, 0.1 A/d㎡ 이상 1 A/d㎡ 이하인 것을 특징으로 하는 무전해 주석도금액의 불순물 제거장치.An impurity removal device for an electroless tin plating solution, characterized in that not more than 0.1 A / dm 2 or less than 1 A / dm 2. 삭제delete 삭제delete 상호 연통되도록 연속적으로 배치된 복수 개의 격실 내로 무전해 주석도금액을 유입하는 단계;Introducing an electroless tin plating solution into a plurality of compartments continuously arranged to communicate with each other; 상기 각 격실 내에 각각 배치되며 양극판 및 음극판을 포함하는 불순물제거부를 통해 상기 무전해 주석도금액을 통과시키는 단계;를 포함하는 무전해 주석도금액의 불순물 제거방법으로서,A method of removing impurities in an electroless tin plating solution, comprising: passing the electroless tin plating solution through an impurity removal unit disposed in each of the compartments and including an anode plate and a cathode plate. 상기 양극판과 음극판은 주석 또는 백금 또는 티타늄 성분 중의 어느 하나를 포함하며,The positive electrode plate and the negative electrode plate includes any one of tin or platinum or titanium, 상기 불순물제거부에 공급되는 전류의 전류밀도는, 0.05 A/d㎡ 이상 10 A/d㎡ 이하이며,The current density of the current supplied to the impurity removal unit is 0.05 A / dm 2 or more and 10 A / dm 2 or less, 상기 무전해 주석도금액의 불순물 제거방법은, 무전해 주석도금액의 불순물 제거장치 내로 무전해 주석도금액을 보충하기 위한 무전해 주석도금액 보충단계 및 The impurity removing method of the electroless tin plating liquid may include: an electroless tin plating liquid replenishing step for replenishing the electroless tin plating liquid into an impurity removing apparatus of the electroless tin plating liquid; 상기 무전해 주석도금액을 무전해 도금부로 유출시키는 단계를 추가적으로 포함하며,Further including the step of flowing out the electroless tin plating solution to the electroless plating portion, 상기 무전해 주석도금액은 상기 상호 연통되도록 연속적으로 배치된 복수 개의 격실을 이동하며 분순물이 제거되는 것을 특징으로 하는 무전해 주석도금액의 불순물 제거방법. And the electroless tin plating liquid is removed from impurities of the electroless tin plating liquid by moving a plurality of compartments arranged in series so as to communicate with each other. 삭제delete 삭제delete 제 7 항에 있어서,The method of claim 7, wherein 상기 불순물제거부에 공급되는 전류의 전류밀도는,The current density of the current supplied to the impurity removing unit is 0.1 A/d㎡ 이상 1 A/d㎡ 이하인 것을 특징으로 하는 무전해 주석도금액의 불순물 제거방법.A method for removing impurities in an electroless tin plating solution, characterized in that not less than 0.1 A / dm 2 or less than 1 A / dm 2. 삭제delete 삭제delete
KR1020070108846A 2007-10-29 2007-10-29 Electroless Tin Plating Solution Impurity Removal Apparatus and Method KR100934729B1 (en)

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KR20050024184A (en) * 2003-09-02 2005-03-10 가부시키가이샤 아루멕쿠스 Plating device and plating method
KR20060035347A (en) * 2004-10-22 2006-04-26 박수복 Abs forms plating system and plating solution control method of the system

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