KR100926243B1 - 광 커플링 디바이스 제조 방법 - Google Patents
광 커플링 디바이스 제조 방법 Download PDFInfo
- Publication number
- KR100926243B1 KR100926243B1 KR1020037014315A KR20037014315A KR100926243B1 KR 100926243 B1 KR100926243 B1 KR 100926243B1 KR 1020037014315 A KR1020037014315 A KR 1020037014315A KR 20037014315 A KR20037014315 A KR 20037014315A KR 100926243 B1 KR100926243 B1 KR 100926243B1
- Authority
- KR
- South Korea
- Prior art keywords
- silicon
- grating
- light
- photoresist
- features
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/26—Optical coupling means
- G02B6/34—Optical coupling means utilising prism or grating
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/18—Diffraction gratings
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Integrated Circuits (AREA)
- Diffracting Gratings Or Hologram Optical Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
Description
Claims (26)
- 광 검출 방법에 있어서:제 1 굴절률(refractive index)을 가진 제 1 재료(12)를 제공하는 단계;상기 제 1 재료 위에 제 2 재료(14)를 제공하는 단계로서, 상기 제 2 재료는 제 2 굴절률을 가지고, 상기 제 2 굴절률은 상기 제 1 굴절률보다 큰, 상기 제 2 재료 제공 단계;상기 제 2 재료에 도핑된 영역(18)을 제공하는 단계;제 3 굴절률을 가진 제 3 재료를 상기 제 2 재료 위에 제공하는 단계;상기 제 3 재료 위에 포토레지스트 층을 침착하는 단계;포토레지스트의 패턴을 남기기 위해 상기 포토레지스트 층을 패터닝하는 단계;상기 포토레지스트를 제거하면서, 상기 포토레지스트의 상기 패턴에 따라 상기 제 3 재료를 에칭하는 단계;상기 제 2 재료에서 캐리어들을 생성하고 상기 제 2 재료가 도파관으로서 기능하도록 상기 제 2 재료 및 상기 제 3 재료의 적어도 일부를 상기 광에 노출시키는 단계; 및상기 도핑된 영역을 이용하여 캐리어들을 수집하는 단계를 포함하는, 광 검출 방법.
- 제 1 항에 있어서,상기 제 2 재료는 반도체 재료를 포함하고, 제 3 재료는 질화물을 포함하는, 광 검출 방법.
- 제 1 항에 있어서,상기 제 1 재료는 절연층인, 광 검출 방법.
- 제 1 항에 있어서,상기 제 2 재료는 실리콘을 포함하는, 광 검출 방법.
- 제 4 항에 있어서,상기 제 2 재료는 게르마늄(germanium)을 더 포함하는, 광 검출 방법.
- 삭제
- 제 1 항에 있어서,상기 제 3 재료는 질화물을 포함하는, 광 검출 방법.
- 삭제
- 제 1 항에 있어서,상기 제 3 재료를 에칭하는 단계는 KOH를 이용하여 수행되는, 광 검출 방법.
- 삭제
- 삭제
- 삭제
- 삭제
- 제 1 항에 있어서,상기 제 3 재료를 에칭하는 단계는 서로 등거리(equidistant)인 상기 제 3 재료의 복수의 피쳐들(features)을 남기는, 광 검출 방법.
- 제 1 항에 있어서,상기 제 3 재료를 에칭하는 단계는 격자(grating)를 형성하는, 광 검출 방법.
- 제 15 항에 있어서,상기 도핑된 영역은 콜렉터인, 광 검출 방법.
- 제 1 항에 있어서,상기 도핑된 영역을 상기 제 2 재료에 제공하는 단계를 수행하면서, 도전성 유형들이 변하는 복수의 도핑된 영역들을 상기 제 2 재료에 형성하는 단계를 더 포함하는, 광 검출 방법.
- 제 1 항에 있어서,상기 제 3 굴절률은 상기 제 2 굴절률보다 작은, 광 검출 방법.
- 제 1 항에 있어서,상기 광은 850 나노미터의 파장을 가진, 광 검출 방법.
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/846,087 US6594422B2 (en) | 2001-05-02 | 2001-05-02 | Opto-coupling device structure and method therefor |
US09/846,087 | 2001-05-02 | ||
PCT/US2002/011169 WO2002091486A1 (en) | 2001-05-02 | 2002-03-27 | An opto-coupling device structure and method therefor |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020097010709A Division KR100926249B1 (ko) | 2001-05-02 | 2002-03-27 | 광 커플링 디바이스 제조 방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20030092125A KR20030092125A (ko) | 2003-12-03 |
KR100926243B1 true KR100926243B1 (ko) | 2009-11-12 |
Family
ID=25296902
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020037014315A Expired - Fee Related KR100926243B1 (ko) | 2001-05-02 | 2002-03-27 | 광 커플링 디바이스 제조 방법 |
KR1020097010709A Expired - Fee Related KR100926249B1 (ko) | 2001-05-02 | 2002-03-27 | 광 커플링 디바이스 제조 방법 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020097010709A Expired - Fee Related KR100926249B1 (ko) | 2001-05-02 | 2002-03-27 | 광 커플링 디바이스 제조 방법 |
Country Status (6)
Country | Link |
---|---|
US (1) | US6594422B2 (ko) |
JP (1) | JP4326805B2 (ko) |
KR (2) | KR100926243B1 (ko) |
CN (1) | CN1286189C (ko) |
TW (1) | TW554545B (ko) |
WO (1) | WO2002091486A1 (ko) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7964925B2 (en) * | 2006-10-13 | 2011-06-21 | Hewlett-Packard Development Company, L.P. | Photodiode module and apparatus including multiple photodiode modules |
US7965901B2 (en) * | 2003-10-31 | 2011-06-21 | Hewlett-Packard Development Company, L.P. | Hard imaging methods and devices and optical scanning systems |
CN1295522C (zh) * | 2003-12-19 | 2007-01-17 | 上海交通大学 | 光学三维测量用高精密组合光栅器件 |
US7098090B2 (en) * | 2004-11-15 | 2006-08-29 | Freescale Semiconductor, Inc. | Method of forming a semiconductor device |
US7169654B2 (en) * | 2004-11-15 | 2007-01-30 | Freescale Semiconductor, Inc. | Method of forming a semiconductor device |
US7067342B2 (en) * | 2004-11-15 | 2006-06-27 | Freescale Semiconductor, Inc. | Method of integrating optical devices and electronic devices on an integrated circuit |
US7109051B2 (en) * | 2004-11-15 | 2006-09-19 | Freescale Semiconductor, Inc. | Method of integrating optical devices and electronic devices on an integrated circuit |
US7309628B2 (en) * | 2004-11-15 | 2007-12-18 | Omar Zia | Method of forming a semiconductor device |
US7896891B2 (en) * | 2005-05-20 | 2011-03-01 | Neotract, Inc. | Apparatus and method for manipulating or retracting tissue and anatomical structure |
US7523547B2 (en) | 2005-08-31 | 2009-04-28 | International Business Machines Corporation | Method for attaching a flexible structure to a device and a device having a flexible structure |
US7821091B2 (en) * | 2007-11-29 | 2010-10-26 | International Business Machines Corporation | Photo detector |
US7692135B2 (en) * | 2008-04-30 | 2010-04-06 | Hewlett-Packard Development Company, L.P. | WDM signal detector |
CN102776566A (zh) * | 2011-05-11 | 2012-11-14 | 深圳光启高等理工研究院 | 基于多晶硅的超材料制备方法和基于多晶硅的超材料 |
CN102800971B (zh) * | 2011-06-01 | 2014-11-26 | 深圳光启高等理工研究院 | 基于半导体的超材料制备方法和基于半导体的超材料 |
WO2016196883A1 (en) | 2015-06-03 | 2016-12-08 | Luna Innovations, Inc. | Photoresistor on silicon-on-insulator substrate and photodetectors incorporating same |
CN111668338B (zh) * | 2019-03-06 | 2023-09-22 | 苏州旭创科技有限公司 | 一种光栅式的面入射型光探测器 |
US11367803B2 (en) * | 2020-04-01 | 2022-06-21 | Taiwan Semiconductor Manufacturing Company Ltd. | Light detecting device, optical device and method of manufacturing the same |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0643312A (ja) * | 1992-07-24 | 1994-02-18 | Mitsubishi Electric Corp | 回折格子の製造方法 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4006432A (en) | 1974-10-15 | 1977-02-01 | Xerox Corporation | Integrated grating output coupler in diode lasers |
US3982810A (en) | 1975-07-09 | 1976-09-28 | The United States Of America As Represented By The Secretary Of The Navy | Directional radiation by asymmetrical dielectric gratings |
DE3447357A1 (de) * | 1984-12-24 | 1986-07-03 | Basf Ag, 6700 Ludwigshafen | Trockenfilmresist und verfahren zur herstellung von resistmustern |
US5033812B1 (en) | 1989-02-17 | 1993-10-12 | Sharp Kabushiki Kaisha | Grating coupler with a tapering waveguide for changing a coupling coefficient |
US5026148A (en) | 1989-12-26 | 1991-06-25 | Hughes Aircraft Company | High efficiency multiple quantum well structure and operating method |
US5056889A (en) * | 1989-12-29 | 1991-10-15 | At&T Bell Laboratories | Optical device including a grating |
JP2689178B2 (ja) | 1990-06-06 | 1997-12-10 | 富士写真フイルム株式会社 | 光導波路素子 |
GB2248964A (en) | 1990-10-17 | 1992-04-22 | Philips Electronic Associated | Plural-wavelength infrared detector devices |
DE488868T1 (de) | 1990-11-30 | 1994-02-03 | Rhone Poulenc Chimie | Gerüststoff auf Basis von Alkalimetallsilikaten für Reinigungsmittelzusammensetzungen. |
JPH0694939A (ja) | 1992-09-09 | 1994-04-08 | Fuji Photo Film Co Ltd | 光導波路素子 |
JPH07240534A (ja) | 1993-03-16 | 1995-09-12 | Seiko Instr Inc | 光電変換半導体装置及びその製造方法 |
US5657407A (en) | 1995-06-07 | 1997-08-12 | Biota Corp. | Optical waveguide coupling device having a parallelogramic grating profile |
GB9524862D0 (en) | 1995-12-06 | 1996-02-07 | The Technology Partnership Plc | Colour diffractive structure |
US6087707A (en) * | 1996-04-16 | 2000-07-11 | Micron Technology, Inc. | Structure for an antifuse cell |
EP0993053A1 (en) * | 1998-10-09 | 2000-04-12 | STMicroelectronics S.r.l. | Infrared detector integrated with a waveguide and method of manufacturing |
-
2001
- 2001-05-02 US US09/846,087 patent/US6594422B2/en not_active Expired - Fee Related
-
2002
- 2002-03-27 CN CNB02809266XA patent/CN1286189C/zh not_active Expired - Fee Related
- 2002-03-27 KR KR1020037014315A patent/KR100926243B1/ko not_active Expired - Fee Related
- 2002-03-27 WO PCT/US2002/011169 patent/WO2002091486A1/en active Application Filing
- 2002-03-27 JP JP2002588642A patent/JP4326805B2/ja not_active Expired - Fee Related
- 2002-03-27 KR KR1020097010709A patent/KR100926249B1/ko not_active Expired - Fee Related
- 2002-04-04 TW TW091106847A patent/TW554545B/zh not_active IP Right Cessation
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0643312A (ja) * | 1992-07-24 | 1994-02-18 | Mitsubishi Electric Corp | 回折格子の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
WO2002091486A1 (en) | 2002-11-14 |
US6594422B2 (en) | 2003-07-15 |
TW554545B (en) | 2003-09-21 |
CN1505842A (zh) | 2004-06-16 |
US20020164122A1 (en) | 2002-11-07 |
CN1286189C (zh) | 2006-11-22 |
KR100926249B1 (ko) | 2009-11-12 |
JP4326805B2 (ja) | 2009-09-09 |
JP2004535667A (ja) | 2004-11-25 |
KR20030092125A (ko) | 2003-12-03 |
KR20090068383A (ko) | 2009-06-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR100926243B1 (ko) | 광 커플링 디바이스 제조 방법 | |
US6633716B2 (en) | Optical device and method therefor | |
DE60320538T2 (de) | Integrierte photo-vorrichtung und wellenleiter | |
TW200426416A (en) | Embedded mode converter | |
US7736927B2 (en) | Method for the production of an anti-reflecting surface on optical integrated circuits | |
CN113804291A (zh) | 耦合至一个或多个光电检测器的多个波导 | |
US11609377B2 (en) | Photodetectors and terminators having a curved shape | |
US11588062B2 (en) | Photodetectors including a coupling region with multiple tapers | |
US20160170296A1 (en) | Device and method for making photomask assembly and photodetector device having light-collecting optical microstructure | |
US20220344523A1 (en) | Photodetectors and absorbers with slanted light incidence | |
US6756185B2 (en) | Method for making integrated optical waveguides and micromachined features | |
JP4195992B2 (ja) | スポットサイズ変換器の製造方法 | |
US6673252B2 (en) | Method of fabricating a refractive silicon microlens | |
JP2011053593A (ja) | 光検出器の製造方法 | |
CN117352521A (zh) | 背照式图像传感器及其制备方法 | |
US9651736B2 (en) | Self-alignment due to wettability difference of an interface | |
CN116936653A (zh) | 片上集成硅单光子探测器及其制备方法 | |
JP2020144211A (ja) | 半導体装置及び半導体装置の製造方法 | |
GB2576212A (en) | Improvements in lens layers for semiconductor devices | |
GB2383644A (en) | Integrated optical device with non-crystalline light absorbent regions | |
KR19990085499A (ko) | 렌즈형 집광 구조물의 제조 방법 | |
JPH01219702A (ja) | 平板レンズおよびその製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PA0105 | International application |
Patent event date: 20031103 Patent event code: PA01051R01D Comment text: International Patent Application |
|
PG1501 | Laying open of application | ||
N231 | Notification of change of applicant | ||
PN2301 | Change of applicant |
Patent event date: 20041015 Comment text: Notification of Change of Applicant Patent event code: PN23011R01D |
|
A201 | Request for examination | ||
PA0201 | Request for examination |
Patent event code: PA02012R01D Patent event date: 20070327 Comment text: Request for Examination of Application |
|
E902 | Notification of reason for refusal | ||
PE0902 | Notice of grounds for rejection |
Comment text: Notification of reason for refusal Patent event date: 20080910 Patent event code: PE09021S01D |
|
E902 | Notification of reason for refusal | ||
PE0902 | Notice of grounds for rejection |
Comment text: Notification of reason for refusal Patent event date: 20090330 Patent event code: PE09021S01D |
|
A107 | Divisional application of patent | ||
PA0104 | Divisional application for international application |
Comment text: Divisional Application for International Patent Patent event code: PA01041R01D Patent event date: 20090526 |
|
E701 | Decision to grant or registration of patent right | ||
PE0701 | Decision of registration |
Patent event code: PE07011S01D Comment text: Decision to Grant Registration Patent event date: 20090825 |
|
GRNT | Written decision to grant | ||
PR0701 | Registration of establishment |
Comment text: Registration of Establishment Patent event date: 20091104 Patent event code: PR07011E01D |
|
PR1002 | Payment of registration fee |
Payment date: 20091105 End annual number: 3 Start annual number: 1 |
|
PG1601 | Publication of registration | ||
FPAY | Annual fee payment |
Payment date: 20121023 Year of fee payment: 4 |
|
PR1001 | Payment of annual fee |
Payment date: 20121023 Start annual number: 4 End annual number: 4 |
|
FPAY | Annual fee payment |
Payment date: 20131023 Year of fee payment: 5 |
|
PR1001 | Payment of annual fee |
Payment date: 20131023 Start annual number: 5 End annual number: 5 |
|
FPAY | Annual fee payment |
Payment date: 20141023 Year of fee payment: 6 |
|
PR1001 | Payment of annual fee |
Payment date: 20141023 Start annual number: 6 End annual number: 6 |
|
LAPS | Lapse due to unpaid annual fee | ||
PC1903 | Unpaid annual fee |
Termination category: Default of registration fee Termination date: 20161009 |