KR100921143B1 - Semiconductor light emitting device - Google Patents

Abstract

An embodiment of the present invention relates to a semiconductor light emitting device and a method of manufacturing the same.

Method of manufacturing a semiconductor light emitting device according to an embodiment of the present invention comprises the steps of forming a first conductive semiconductor layer; Forming an active layer on the first conductive semiconductor layer; And forming a second conductive semiconductor layer on the active layer, wherein at least one of the layers is grown in-situ by exposure to a lamp during growth.

LED, lamp, exposure, minority carrier

Description

Semiconductor light emitting device

An embodiment of the present invention relates to a semiconductor light emitting device and a method of manufacturing the same.

Group III-V nitride semiconductors are spotlighted as core materials of light emitting devices such as light emitting diodes (LEDs) or laser diodes (LDs) due to their physical and chemical properties.

A III-V nitride semiconductor is usually made of a semiconductor material having a composition formula of In _x Al _y Ga _1-xy N (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ x + y ≦ 1). LED or LD using such a nitride semiconductor material is widely used in the light emitting device for obtaining light in the blue or green wavelength band, and is applied as a light source of various products such as keypad light emitting part of the mobile phone, an electronic board, a lighting device.

In manufacturing such a light emitting diode, studies are being conducted to increase the luminous efficiency of the active layer, to improve diode characteristics such as reverse current and reverse voltage, or to enhance electrical resistance of ESD.

An embodiment of the present invention provides a semiconductor light emitting device and a method of manufacturing the same so that a high quality thin film can be grown.

An embodiment of the present invention provides a semiconductor light emitting device and a method of manufacturing the same, which can increase the luminous efficiency of the active layer, improve the characteristics of the diode, and enhance electrical resistance.

A semiconductor light emitting device according to an embodiment of the present invention includes a first conductive semiconductor layer; An active layer formed on the first conductive semiconductor layer; At least one second conductive semiconductor layer formed on the active layer, characterized in that to expose at least one of the layers with a lamp to provide a minority carrier.

Method of manufacturing a semiconductor light emitting device according to an embodiment of the present invention comprises the steps of forming a first conductive semiconductor layer; Forming an active layer on the first conductive semiconductor layer; And forming a second conductive semiconductor layer on the active layer, wherein at least one of the layers is grown in-situ by exposure to a lamp during growth.

According to the semiconductor light emitting device and the manufacturing method thereof according to the embodiment of the present invention, it is possible to increase the luminous efficiency of the active layer.

In addition, it can improve diode characteristics such as reverse current and reverse voltage of LED structure, and can strengthen electrical resistance of ESD.

In addition, a first conductive semiconductor layer excellent in crystallinity can be provided.

Hereinafter, a semiconductor light emitting device and a method of manufacturing the same according to an exemplary embodiment of the present invention will be described with reference to the accompanying drawings. In the description of an embodiment according to the present invention, each layer (film), region, pattern or structure is "on" or "under" the substrate, each layer (film), region, pad or patterns. In the case where it is described as being formed in, "on" and "under" include both the meaning of "directly" and "indirectly". In addition, the criteria for the top or bottom of each layer will be described with reference to the drawings.

1 is a cross-sectional view illustrating a semiconductor light emitting device according to a first embodiment of the present invention.

Referring to FIG. 1, the semiconductor light emitting device 100 may include a substrate 111, a buffer layer 113, a first undoped GaN layer 115, a first conductive semiconductor layer 117, an active layer 119, and a second conductive property. The semiconductor layer 121 is included.

The substrate 111 may be selected from the group consisting of sapphire substrate (Al ₂ O ₃ ), GaN, SiC, ZnO, Si, GaP and GaAs, and the substrate may be removed according to the device mounting method.

The buffer layer 113 is formed on a substrate, and GaN, InN, AlN, AlInN, InGaN, AlGaN, InAlGaN, etc. are selectively formed. A first undoped GaN layer 115 is formed on the buffer layer 113. Here, the buffer layer 113 and / or the first undoped GaN layer 115 may be selectively removed.

A first conductive semiconductor layer 117 is formed on the first undoped GaN layer 115. The first conductive semiconductor layer 117 may be implemented as an n-type semiconductor layer, the n-type semiconductor layer may be selected from GaN, AlGaN, InGaN, etc., n-type dopants (eg, Si, Ge, Sn Etc.) is doped.

An active layer 1119 is formed on the first conductive semiconductor layer 117. The active layer 119 may be formed in a single or multiple quantum well structure, for example, with one cycle of an InGaN well layer / GaN barrier layer or an InGaN well layer / AlGaN barrier layer. Herein, the well layer In _x Ga _1-x N may be adjusted to 0 <x≤1.

The second conductive semiconductor layer 121 is formed on the active layer 119. For example, the second conductive semiconductor layer 121 may be implemented as a p-type semiconductor layer doped with a p-type dopant. The p-type semiconductor layer may be made of any one of a GaN compound semiconductor such as a GaN layer, an AlGaN layer, an InGaN layer, or the like.

In addition, a third conductive semiconductor layer (not shown) may be formed on the second conductive semiconductor layer 121. The third conductive semiconductor layer may be implemented as an n-type semiconductor layer.

In the growth of each layer of the semiconductor light emitting device, a material implanted when the exposed layer is grown by growing in-situ by exposing using a lamp when the at least one semiconductor layer is grown. By chemical reactions with the photons, photo enhanced minority carriers such as electrons and holes are generated. This can enhance the luminous efficiency and electrical resistance of the active layer.

The lamp is a lamp for growing photo electro luminescence, and for example, at least one of a mercury lamp, an x-ray, an electron beam, and a halogen lamp may be selectively used. It is not limited to this. In addition, the same lamp or different lamps may be used for different semiconductor layers.

FIG. 2 is a diagram illustrating an example of growth of the first undoped GaN layer of FIG. 1.

Referring to FIG. 2, after the buffer layer is formed on the substrate, NH ₃ and TMGa are supplied at a predetermined growth temperature using the same growth equipment to provide a first undoped GaN layer 115 including no dopant in a predetermined thickness. In this case, the first undoped GaN layer 115 is grown in-situ through exposure using the lamp 130 in the same growth equipment (in-situ).

In this case, by exposing with the lamp 130, the crystals of the first undoped GaN layer 115 generate photo enhanced minority halls Hm by the exposure of the lamp 130 during growth, and the substrate ( Due to the inconsistency between the 111 and GaN layer crystals, a dead zone 115B is formed in which no minority holes Hm exist around a defect Dt having a positive charge.

The GaN formation scheme is as follows.

(CH ₃ ) ₃ Ga (g) + NH ₃ (g)-> GaN (s) + 3CH ₄ (g), g: gas state, s: solid state

Normal growth, for example, a normal growth rate is grown around 2 um / hr by the GaN generation reaction equation (Dt), and the other regions are holes (+) or electrons (-) generated by the above reaction equation. The production of the intermediate product of is hindered and grows at a rate of 10-15% lower than the normal growth rate. Due to this difference in growth rate, the surface 115A of the first undoped GaN layer 115 is formed with a rough surface or an uneven surface. Since the surface of the first undoped GaN 115 is roughly formed, it is possible to increase the free surface in which dislocations, which adversely affect the LED structure characteristics, may be pinned. .

As a result, defects of the first conductive semiconductor layer 117 of FIG. 1 are reduced, thereby increasing luminous efficiency of the active layer 119 grown on the top, and improving diode characteristics such as reverse current and reverse voltage of the final LED structure. It can improve electrical resistance, such as electrostatic discharge (ESD).

In the above embodiment, in-situ growth was performed by exposing with a lamp during growth of the first undoped GaN 115, but in-situ growth was also performed by exposing with a lamp in the same manner with respect to the first conductive semiconductor layer 117. Can be done.

3 is a diagram illustrating an example of growth of a quantum well layer of the active layer of FIG. 1.

Referring to FIG. 3, the active layer 119 uses a carrier gas of nitrogen and hydrogen at a predetermined growth temperature and supplies atmospheric gases NH ₃ , TMGa (TFGa), TMln, and TMAl to provide In _x Ga _(1-x ) having a predetermined thickness. ₎ N (0 <x ≦ 1) quantum well layer 119A and quantum barrier layer 119B are grown.

When the InGaN quantum well layer 119A grows, a large amount of Ga vacancy is generated, and the Ga vacancy has a negative charge, thereby trapping a positron.

To this end, when the InGaN quantum well layer 119A is grown, it is exposed by using the lamp 132 to grow in-situ so that minority holes are generated and the generated minority holes are trapped at Ga empty lattice points. Therefore, it is possible to effectively prevent the generation of Ga empty lattice points of GaN which are negative charges. That is, by compensating the generation of Ga empty lattice points of GaN by using photo enhanced minority halls to neutralize Ga empty lattice points, it is possible to prevent positrons from being trapped by Ga empty lattice points. The positron can contribute to light emission.

As a result, the free positron of the active layer may be increased, thereby reducing the non-radiative recombination, thereby increasing the luminous efficiency.

4 is a cross-sectional view illustrating a semiconductor light emitting device 100A according to a second embodiment of the present invention, FIG. 5 is a view illustrating a V defect 118B due to indium, and FIG. 6 is a view of the low mol InGaN layer of FIG. 4. It is a figure which shows the growth example. The second embodiment will be denoted by the same reference numerals for the same parts as the first embodiment, and description thereof will be omitted.

4 to 6, a low mole InGaN layer 118 having a low indium content is formed on the first conductive semiconductor layer 117, and the low mole InGaN layer 118 is formed of an active layer 119. InGaN spreading layer or InGaN barrier with low indium content to control the strain of the active layer 119 before growth of the active layer 119 to increase the internal quantum efficiency It can be grown in a layer (barrier layer) or the like. In growing the low mol InGaN layer 118, the indium doped content is controlled to be less than 5%.

)에 위치하게 된다. 따라서 인듐이 혼합된 경우 V 결함(118B)이 다량 생성될 수 있는데, 이러한 인듐이 혼합된 층의 표면은 어느 일정한 표면에너지 E(surface)를 가질 것이고, V 결함(118B)이 형성되면 상기 표면 에너지는 E'로 변화게 된다.As shown in FIG. 5, when indium is mixed in the InGaN layer, the indium atoms are inclined rather than located on the (0001) surface.

). Therefore, a large amount of V defect 118B may be generated when indium is mixed, and the surface of the indium mixed layer may have a certain surface energy E, and when the V defect 118B is formed, the surface energy. Becomes E '.

In addition, the surface energy E 'can be expressed as follows.

* E '= f (S, λx)

)facet가 형성되면서 생기는 에너지이고, λx는 전위 코어 에너지이다. 상기 InGaN층(118)의 표면이 최소의 E' 값을 가질 때까지 V 결함(118B)은 계속 생성되어 커질 것이다. Where S loses (0001) facet, (

is the energy produced by the formation of facet, and λx is the potential core energy. The V defect 118B will continue to generate and grow until the surface of the InGaN layer 118 has a minimum E 'value.

)에 우선적으로 성장이 일어나게 된다.This is due to the potential energy difference (1.5-2V) when indium is mixed with the InGaN layer 118, which is inclined than the (0001) surface 118A.

), Growth occurs first.

In order to prevent this, as shown in FIG. 6, the low mol InGaN layer 118 is grown in-situ in the state exposed to the lamp 134, thereby generating the indium doping during the growth of the low mol InGaN layer 118. By suppressing the generation and growth of the V defect 118B, a high quality InGaN layer can be grown.

) 전계 상태(surface electric state)를 교란시켜 주어, 인듐에 의한 V 결함(V-defect)(118B)의 생성과 성장을 제한하게 된다. 즉, 로우 몰 InGaN(118)에서 V 결함(118B)의 표면(

)에 대한 포텐셜 에너지를 교란시켜 주어, V 결함(118B)에 계속 붙으려는 인듐을 방해하여 V 결함(118B)의 성장을 제한하게 된다.In other words, if a photo enhanced minority hall is generated by in-situ exposure during the growth of the low mol InGaN layer 118, the minority hole may be a surface (e.g.,

) Disturbs the surface electric state, limiting the generation and growth of V-defect 118B by indium. That is, the surface of the V defect 118B in the low mol InGaN 118 (

Perturbing the potential energy for V), thereby inhibiting indium from continuing to attach to V defect 118B, thereby limiting the growth of V defect 118B.

7 is a cross-sectional view illustrating a semiconductor light emitting device 100B according to a third exemplary embodiment of the present invention, and FIG. 8 is a diagram illustrating a growth example of the second conductive semiconductor layer of FIG. 7. The third embodiment will be denoted by the same reference numerals for the same parts as the first embodiment, and description thereof will be omitted.

7 and 8, before the second conductive semiconductor layer 121 is grown, the second undoped GaN layer 120 is grown, and the second conductive semiconductor layer is grown on the second undoped GaN layer 121. Will grow. The third undoped GaN layer may be formed on the second conductive semiconductor layer 121.

The second conductive semiconductor layer 121 is implemented as a p-GaN layer by supplying TMGa, (EtCp2Mg) {Mg (C2H5C5H4) 2} and NH ₃ at a predetermined temperature using hydrogen (H) as a carrier gas. .

At this time, the p-GaN layer 121 doped with Mg is thinly grown, and a second undoped GaN layer 120 is formed under the p-GaN layer 121 to thereby form a doped p-GaN layer ( Magnesium (Mg) naturally diffuses from the 121 to the second undoped GaN layer 120 to form a p-GaN layer 121 doped with high-quality Mg. Here, the thickness of the second undoped GaN layer may be 10 kPa to 500 kPa, and the thickness of the second conductive semiconductor layer may be 10 kPa to 2000 kPa.

At this time, since the negatively charged hydrogen (H) ions are generated to generate Mg-H bonds in the p-GaN layer 121 on the second undoped GaN layer 120, the p-GaN layer ( When the growth of 121 is performed by using the lamp 136 to expose and grow in-situ, since a minority hole is generated by the second undoped GaN layer 120, the Mg-H coupling is interrupted.

That is, when Mg is doped in the p-GaN layer 121, Mg is combined with H of ammonia gas to form an Mg-H conjugate having electrical insulating properties. Therefore, it is difficult to obtain a high concentration of p-GaN layer 121. To this end, the p-GaN layer 121 is exposed to the lamp 136 and grows in-situ to generate photo enhanced minority electrons, thereby combining the generated minor electrons with H ions. Accordingly, the phenomenon in which the hole carrier concentration of the p-GaN layer 121 is lowered due to the combination of Mg and H ions used as an atmosphere gas and a transport gas may be improved.

When the p-GaN layer 121 grows, by generating a small number of electrons by using the lamp 136, by forming a primary bond between the generated small number of electrons and Mg ions to prevent the Mg-H bond, NH ₃ and It is possible to increase the hall concentration through the short time heat treatment at high temperature in the state of excluding H ₂ gas. Accordingly, there is an effect such as improving the driving voltage of the light emitting diode and reducing the amount of Mg source used, thereby reducing the damage of the active layer to improve the luminous efficiency.

Although the present invention has been described above with reference to the embodiments, these are only examples and are not intended to limit the present invention, and those skilled in the art to which the present invention pertains may have an abnormality within the scope not departing from the essential characteristics of the present invention. It will be appreciated that various modifications and applications are not illustrated. For example, each component specifically shown in the embodiment of the present invention can be modified. And differences relating to such modifications and applications will have to be construed as being included in the scope of the invention defined in the appended claims.

1 is a cross-sectional view showing a semiconductor light emitting device according to a first embodiment of the present invention.

FIG. 2 is a view showing a growth example of the first undoped GaN layer of FIG. 1;

3 is a cross-sectional view illustrating an example of growth of a quantum well layer of the active layer of FIG. 1.

4 is a cross-sectional view of a semiconductor light emitting device according to a second exemplary embodiment of the present invention.

FIG. 5 shows an example of a V defect of a low mol InGaN layer in FIG. 4. FIG.

FIG. 6 is a view showing a growth example of the low mol InGaN layer of FIG. 4; FIG.

7 is a cross-sectional view showing a semiconductor light emitting device according to a third embodiment of the present invention.

FIG. 8 is a view illustrating a growth example of the second conductive semiconductor layer of FIG. 7;

<Explanation of symbols for the main parts of the drawings>

100,100A, 100B: semiconductor light emitting device

111 substrate 113 buffer layer

115: first undoped GaN layer 117: first conductive semiconductor layer

118: low mol InGaN layer 119: active layer

119A: Quantum Well Layer 119B: Quantum Barrier Layer

120: second undoped GaN layer 121: second conductive semiconductor layer

Claims (7)

A first conductive semiconductor layer; An active layer formed on the first conductive semiconductor layer; A second conductive semiconductor layer formed on the active layer, Wherein the plurality of layers comprises minority carriers produced by exposure of a lamp during growth of the semiconductor layer. A first conductive semiconductor layer; An active layer formed on the first conductive semiconductor layer; A second conductive semiconductor layer formed on the active layer; A third conductive semiconductor layer on the second conductive semiconductor layer, At least one of said layers includes minority carriers produced by exposure of a lamp during growth of said semiconductor layer. A first conductive semiconductor layer; An active layer formed on the first conductive semiconductor layer; A second undoped semiconductor layer formed on the active layer; A second conductive semiconductor layer formed on the second undoped semiconductor layer, And the second conductive semiconductor layer comprises a minority carrier generated by exposure of a lamp during growth of the semiconductor layer. The method according to any one of claims 1 to 3, A first undoped semiconductor layer formed under the first conductive semiconductor layer, And the first undoped semiconductor layer is exposed by a lamp during the growth of the semiconductor layer, and includes a minority carrier generated by the exposure of the lamp. The method of claim 4, wherein And a buffer layer formed under the first undoped semiconductor layer and a substrate formed under the buffer layer. The method of claim 3, wherein The second undoped semiconductor layer has a thickness of 10 kPa to 500 kPa, The thickness of the second conductive semiconductor layer is a semiconductor light emitting device formed of 10 ~ 2000Å. The method according to any one of claims 1 to 3, The lamp includes at least one of a mercury lamp, X-rays, electron beams, halogen lamps.

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