KR100906627B1 - The method for fabricating 3d pattern using imprintring lithography process and photo lithography process - Google Patents
The method for fabricating 3d pattern using imprintring lithography process and photo lithography process Download PDFInfo
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
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- B81C2201/0147—Film patterning
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Abstract
본 발명은 임프린트와 포토 리소그래피 공정을 이용한 3차원 구조물 제조방법에 관한 것으로서, 공정시간의 제어만으로 임프린트 공정에서 문제가 되고 있는 잔여층의 높이를 제어함으로써 새로운 3차원 구조물 제조방법을 제안하고, 포토 리소그래피 공정을 추가시켜 공정을 마무리함으로써 잔여층 제거를 위한 추가 공정 없이 3차원 구조물을 제조할 수 있는 임프린트와 포토 리소그래피 공정을 이용한 3차원 구조물 제조방법을 제공함에 그 특징적인 목적이 있다. The present invention relates to a method for manufacturing a three-dimensional structure using an imprint and photolithography process, and proposes a new method for manufacturing a three-dimensional structure by controlling the height of the remaining layer, which is a problem in the imprint process, only by controlling the process time. The purpose of the present invention is to provide a method of manufacturing a three-dimensional structure by using an imprint and a photolithography process in which a three-dimensional structure can be manufactured without an additional process for removing residual layers by adding a process to finish the process.
이러한 목적을 달성하기 위한 본 발명은, (a) 기판(substrate) 상부에 스핀 코팅하여 포토 레지스트를 증착하는 단계; (b) 상기 (a) 단계를 통해 증착된 포토 레지스트 위에 소정 패턴이 기록된 금형(mold)을 이용하여 소정 온도 및 소정 압력으로 임프린트하는 단계; 및 (c) 상기 (b) 단계를 통해 제작된 구조물 위에 소정 패턴이 기록된 포토 마스크(photo mask)를 마련하여, 노광(expose) 및 현상(develop) 공정을 통해 특정 패턴을 갖는 3차원 구조물을 형성하는 단계; 를 포함한다. The present invention for achieving the above object, (a) spin coating on the substrate (substrate) to deposit a photoresist; (b) imprinting at a predetermined temperature and a predetermined pressure by using a mold in which a predetermined pattern is recorded on the photoresist deposited through the step (a); And (c) providing a photo mask in which a predetermined pattern is recorded on the structure fabricated through the step (b), thereby forming a three-dimensional structure having a specific pattern through an exposure and development process. Forming; It includes.
임프린트, 포토 리소그래피 Imprint, Photo Lithography
Description
본 발명은 임프린트 공정 시에 작용하는 공정 온도와 공정 압력, 공정 시간 등의 환경조건을 이용하여 평평한 포토 레지스트의 형태를 다양한 높이를 가지는 평평하지 않은 형태로 제작이 가능한 3차원 구조물 제조방법에 관한 것으로서, 특히 간단한 방법으로 공정시간의 제어만으로 임프린트 공정 후, 문제가 되고 있는 포토 레지스트 잔여층의 높이를 제어함으로써, 잔여층 제거를 위한 추가 공정 없이 3차원 구조물을 제조할 수 있는 방법에 관한 것이다. The present invention relates to a three-dimensional structure manufacturing method capable of manufacturing a flat photoresist in a non-flat form having a variety of heights using environmental conditions such as process temperature, process pressure, process time acting during the imprint process. In particular, the present invention relates to a method of manufacturing a three-dimensional structure without an additional process for removing the residual layer by controlling the height of the remaining photoresist layer after the imprint process by only controlling the process time by a simple method.
현재 반도체 공정을 이용하는 MEMS, MOMS, 센서, 반도체 산업분야는 많은 발전과 연구가 되고 있다. 이 산업분야들은 복잡하고 고기능의 성능의 소자를 제작하기 위하여 3차원 구조의 필요성이 날이 갈수록 확대되고 있다. Currently, the MEMS, MOMS, sensor, and semiconductor industries using the semiconductor process have been developed and researched a lot. In these industries, the need for three-dimensional structures is increasing day by day to fabricate complex, high-performance devices.
하지만, 일반적으로 3차원 구조물을 제작하기 위해서는 많은 공정을 사용하거나 다양한 물질을 사용하여 제작이 되고 있다. 이러한 문제를 해결하기 위해서 gray mask photo-lithography, imprint lithography 등의 연구가 많이 이루어지고 있다. 그 중에서도 임프린트 리소그래피(imprint lithography) 는 차세대 공정으로 많은 연구가 진행되고 있다. 이 공정은 기존의 포토 리소그래피(photo-lithography) 에 비교하여 많은 장점이 있으나, 임프린트 공정을 한 후에 잔여층(residual layer)이 항상 남게 되어 O2 plasma 등을 이용한 제거 공정이 추가적으로 필요하였다.However, in general, in order to manufacture a three-dimensional structure using a number of processes or using a variety of materials are being manufactured. In order to solve this problem, many researches such as gray mask photo-lithography and imprint lithography have been conducted. Among them, imprint lithography is a next generation process, and much research is being conducted. This process has many advantages over conventional photo-lithography, but after the imprint process, a residual layer always remains, and thus an additional removal process using O2 plasma was required.
본 발명은 상기와 같은 문제점을 감안하여 안출된 것으로서, 공정시간의 제어만으로 임프린트 공정에서 문제가 되고 있는 잔여층의 높이를 제어함으로써 새로운 3차원 구조물 제조방법을 제안하고, 포토 리소그래피 공정을 추가시켜 공정을 마무리함으로써, 잔여층 제거를 위한 추가 공정 없이 3차원 구조물을 제조할 수 있는, 임프린트와 포토 리소그래피 공정을 이용한 3차원 구조물 제조방법을 제공함에 그 특징적인 목적이 있다. The present invention has been made in view of the above problems, and proposes a new three-dimensional structure manufacturing method by controlling the height of the remaining layer that is a problem in the imprint process only by controlling the process time, adding a photolithography process The present invention provides a method of manufacturing a three-dimensional structure by using an imprint and photolithography process, by which a three-dimensional structure can be manufactured without an additional process for removing a residual layer.
이러한 기술적 과제를 달성하기 위하여 본 발명은, (a) 기판(substrate) 상부에 스핀 코팅하여 포토 레지스트를 증착하는 단계; (b) 상기 (a) 단계를 통해 증착된 포토 레지스트 위에 소정 패턴이 기록된 금형(mold)을 이용하여 소정 온도 및 소정 압력으로 임프린트하는 단계; 및 (c) 상기 (b) 단계를 통해 제작된 구조물 위에 소정 패턴이 기록된 포토 마스크(photo mask)를 마련하여, 노광(expose) 및 현상(develop) 공정을 통해 특정 패턴을 갖는 3차원 구조물을 형성하는 단계; 를 포함한다. In order to achieve the technical problem, the present invention, (a) spin coating on the substrate (substrate) to deposit a photoresist; (b) imprinting at a predetermined temperature and a predetermined pressure by using a mold in which a predetermined pattern is recorded on the photoresist deposited through the step (a); And (c) providing a photo mask in which a predetermined pattern is recorded on the structure fabricated through the step (b), thereby forming a three-dimensional structure having a specific pattern through an exposure and development process. Forming; It includes.
상기와 같은 본 발명에 따르면, 임프린트 공정을 통해 복잡한 구조의 3차원 구조물 패턴을 포토 레지스트 뿐만 아니라 포토 리소그래피 공정으로 패턴을 정의할 수 있는 모든 물질을 제작할 수 있으며, 포토 리소그래피 공정을 통해 구조물의 패턴을 형성하도록 함으로써 종래보다 복잡한 구조의 3차원 패턴을 쉽게 제조할 수 있으며, 잔여층 제거를 위한 추가 공정이 필요치 않은 바 종국적으로는 공정 전체의 신뢰도를 높일 수 있는 효과가 있다.According to the present invention as described above, all materials capable of defining the pattern by the photolithography process as well as the photoresist of the complex structure three-dimensional structure pattern through the imprint process can be produced, and the pattern of the structure through the photolithography process By forming, it is possible to easily manufacture a three-dimensional pattern of a more complicated structure than the conventional, there is an effect that can increase the reliability of the entire process as a final step is not required for the remaining layer removal.
본 발명의 구체적 특징 및 이점들은 첨부도면에 의거한 다음의 상세한 설명으로 더욱 명백해질 것이다. 이에 앞서 본 발명에 관련된 공지 기능 및 그 구성에 대한 구체적인 설명이 본 발명의 요지를 불필요하게 흐릴 수 있다고 판단되는 경우에는, 그 구체적인 설명을 생략하였음에 유의해야 할 것이다.Specific features and advantages of the present invention will become more apparent from the following detailed description based on the accompanying drawings. In the meantime, when it is determined that the detailed description of the known functions and configurations related to the present invention may unnecessarily obscure the subject matter of the present invention, it should be noted that the detailed description is omitted.
이하, 첨부된 도면을 참조하여 본 발명을 상세하게 설명한다. Hereinafter, with reference to the accompanying drawings will be described in detail the present invention.
본 발명에 따른 임프린트와 포토 리소그래피 공정을 이용한 3차원 구조물 제조방법에 관하여 도 1 내지 도 4 를 참조하여 설명하면 다음과 같다. A method of manufacturing a three-dimensional structure using an imprint and photolithography process according to the present invention will be described with reference to FIGS. 1 to 4.
도 1 은 본 발명에 따른 임프린트와 포토 리소그래피 공정을 이용한 3차원 구조물 제조방법의 전체 흐름도이며, 도 2a 및 도 2b 는 도 1 의 공정도에 대한 상태 예시도이다. 1 is an overall flowchart of a method of manufacturing a three-dimensional structure using an imprint and photolithography process according to the present invention, Figures 2a and 2b is an exemplary view of the process diagram of FIG.
[제 1 공정] 포토 레지스트 증착.First Step Photoresist Deposition.
도 1 및 도 2a 의 (a) 에 나타낸 바와 같이, 실리콘 재질의 기판(siilcon substrate) 상부에 스핀 코팅하여 포토 레지스트(photo resist: 감광막)를 증착한다(S110). 이때, 포토 레지스트는 novolak 계열의 포토 레지스트(AZ-9260, AZ Electronic Materials)로서, 20 μm 적층한 후, soft-baking 을 95°C에서 실시한 다. 이때, 포토 레지스트 뿐만이 아닌 포토 리소그래피로 패턴이 가능한 고분자를 사용할 수 있다. As shown in (a) of FIG. 1 and FIG. 2A, a photoresist is deposited by spin coating on a silicon substrate (S110). At this time, the photoresist is a novolak-based photoresist (AZ-9260, AZ Electronic Materials), 20 μm laminated, soft-baking is carried out at 95 ° C. In this case, not only a photoresist but also a polymer capable of being patterned by photolithography may be used.
[제 2 공정] 임프린트(imprint).[Step 2] Imprint.
도 2a 의 (b) 에 나타낸 바와 같이, 제 1 공정을 통해 증착된 포토 레지스트 위에 소정 패턴이 기록된 금형(mold)을 이용하여 소정 온도 및 소정 압력으로 임프린트한다(S120). 본 실시예에서, 상기 소정 온도는 80°C 내지 100°C, 바람직하게 90°C 인 것으로 설정하겠으며, 소정 압력은 5 bar 내지 10 bar, 바람직하게 8 bar 인 것으로 설정하겠으나, 본 발명이 이에 한정되는 것은 아니다. As shown in (b) of FIG. 2A, imprinting is performed at a predetermined temperature and a predetermined pressure using a mold in which a predetermined pattern is recorded on the photoresist deposited through the first process (S120). In this embodiment, the predetermined temperature is set to 80 ° C to 100 ° C, preferably 90 ° C, the predetermined pressure will be set to 5 bar to 10 bar, preferably 8 bar, but the present invention is limited thereto. It doesn't happen.
이때, 금형(mold)은 상기 도 2a 의 (b) 에 도시된 바와 같이 3차원 음각구조로서, 실리콘 기판 위에 크롬(Cr)을 접착층으로 하여 금(Au)이 증착된다. At this time, the mold (mold) is a three-dimensional engraved structure as shown in (b) of FIG. 2a, gold (Au) is deposited on the silicon substrate by using the chromium (Cr) as an adhesive layer.
상기 금형(mold)는 도 2a 에 나타낸 바와 같이, 길이 8 cm, 상부 너비 60 μm, 하부 너비 50 μm, 단면의 높이 60 μm, 상부와 하부 너비가 5°의 경사를 갖는 바, 상기 금형(mold)을 통해 포토 레지스트를 임프린트함으로써, 포토 레지스트의 상부는 도 3 에 도시된 바와 같이 금형과 같은 길이, 상부 너비, 하부 너비, 단면의 높이, 상부와 하부 너비간의 경사도를 갖는다. As shown in FIG. 2A, the mold has a length of 8 cm, an upper width of 60 μm, a lower width of 50 μm, a cross-section height of 60 μm, and an upper and lower width having an inclination of 5 °. By imprinting the photoresist through), the top of the photoresist has the same length as the mold, the top width, the bottom width, the height of the cross section, and the slope between the top and bottom widths.
이때, 임프린트 공정시간 조절을 통해 포토 레지스트 잔여층(residual layer)의 두께를 제어한다. 잔여층의 두께는 Squeezed flow 방정식을 사용하여 예측할 수 있으며, 이러한 방정식에 있는 공정변수를 바탕으로 시간에 따른 높이를 측정하였다. At this time, the thickness of the photoresist residual layer is controlled by adjusting the imprint process time. The thickness of the residual layer can be estimated using the Squeezed flow equation, and the height over time is measured based on the process variables in these equations.
도 4 는 임프린트 공정시간에 따른 잔여층의 높이 변화를 보여주는 그래프로서, 도시된 바와 같이 0초에서 30초까지는 공정시간과 잔여층의 높이가 비례하며 낮아지며, 30초에서 50초까지는 더 완만하게 낮아지는 결과가 나타났다. 즉, 이러한 특성은 공정시간의 제어만으로 간단히 잔여층의 높이를 제어할 수 있음을 보여준다. 본 실시예에서, 임프린트 공정시간을 1초 내지 60초 인 것으로 설정하겠으나, 본 발명이 이에 한정되는 것은 아니다. Figure 4 is a graph showing the change in the height of the residual layer according to the imprint process time, as shown in the process time and the height of the residual layer is proportionally lower from 0 seconds to 30 seconds, lower gently from 30 seconds to 50 seconds The result was a loss. That is, this characteristic shows that the height of the remaining layer can be controlled simply by controlling the process time. In this embodiment, the imprint process time will be set to 1 second to 60 seconds, but the present invention is not limited thereto.
[제 3 공정] 포토 리소그래피.Third Step Photolithography.
도 2b 의 (c) 에 나타낸 바와 같이, 제 2 공정을 통해 제작된 구조물 위에 소정 패턴이 기록된 포토 마스크(photo mask)를 마련하여, 노광(expose) 및 현상(develop) 공정을 통해 도 2b 의 (d) 와 같이 특정 패턴을 갖는 3차원 구조물을 형성한다(S130). As shown in (c) of FIG. 2B, a photo mask in which a predetermined pattern is recorded is provided on the structure fabricated through the second process, and the exposure and development processes of FIG. 2B are performed. To form a three-dimensional structure having a specific pattern as shown in (d) (S130).
지금까지 상술한 바와 같은 구성 및 특징을 갖는 본 발명은, 종래와 달리 임프린팅 공정을 통해 3차원 구조물의 한 부분으로 제작함으로써, 잔여층 제거를 위한 추가적인 공정이 필요치 않으며, 잔여층의 높이가 임프린팅 공정시간에 따라 선형적으로 변화한다는 것을 통해 3차원 구조물 제작에 대한 신뢰성을 높일 수 있는 특징적인 장점을 갖는다.The present invention having the configuration and features as described above so far, by manufacturing as a part of the three-dimensional structure through the imprinting process unlike the conventional, there is no need for an additional process for removing the residual layer, the height of the residual layer is By linearly changing with the printing process time, there is a characteristic advantage that can increase the reliability of the three-dimensional structure fabrication.
이상으로 본 발명의 기술적 사상을 예시하기 위한 바람직한 실시예와 관련하 여 설명하고 도시하였지만, 본 발명은 이와 같이 도시되고 설명된 그대로의 구성 및 작용에만 국한되는 것이 아니며, 기술적 사상의 범주를 일탈함이 없이 본 발명에 대해 다수의 변경 및 수정이 가능함을 당업자들은 잘 이해할 수 있을 것이다. 따라서, 그러한 모든 적절한 변경 및 수정과 균등물들도 본 발명의 범위에 속하는 것으로 간주되어야 할 것이다. As described above and described with reference to a preferred embodiment for illustrating the technical idea of the present invention, the present invention is not limited to the configuration and operation as shown and described as such, it departs from the scope of the technical idea It will be apparent to those skilled in the art that many modifications and variations can be made to the present invention without this. Accordingly, all such suitable changes and modifications and equivalents should be considered to be within the scope of the present invention.
도 1 은 본 발명에 따른 임프린트와 포토 리소그래피 공정을 이용한 3차원 구조물 제조방법의 전체 흐름도.1 is a general flow diagram of a three-dimensional structure manufacturing method using an imprint and photolithography process according to the present invention.
도 2a 는 본 발명에 따른 도 1 의 공정도에 대한 상태 예시도. Figure 2a is an exemplary view of the process diagram of Figure 1 in accordance with the present invention.
도 2b 는 본 발명에 따른 도 1 의 공정도에 대한 상태 예시도. Figure 2b is an exemplary view of the process diagram of Figure 1 in accordance with the present invention.
도 3 은 본 발명에 따른 금형을 통해 임프린트된 포토 레지스트를 보여주는 일예시도. 3 is an exemplary view showing a photoresist imprinted through a mold according to the present invention.
도 4 는 본 발명에 따른 임프린트 공정시간에 따른 잔여층의 높이 변화를 보여주는 그래프.Figure 4 is a graph showing the height change of the residual layer with the imprint process time according to the present invention.
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| KR1020070121547A KR100906627B1 (en) | 2007-11-27 | 2007-11-27 | The method for fabricating 3d pattern using imprintring lithography process and photo lithography process |
| PCT/KR2008/001138 WO2009069858A1 (en) | 2007-11-27 | 2008-02-27 | Method of fabricating three-dimensional patterned structure using imprinting lithography process and photo lithography process |
| TW097107044A TWI360519B (en) | 2007-11-27 | 2008-02-29 | Method of fabricating three-dimensional patterned |
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| KR101422112B1 (en) * | 2012-03-14 | 2014-07-23 | 한국기계연구원 | Method of nano-imprint lithography |
| KR101508185B1 (en) * | 2013-11-13 | 2015-04-07 | (재)한국나노기술원 | 3-Dimensional Metal Oxide Structure and Production Method Therefor |
| KR102201321B1 (en) * | 2014-07-25 | 2021-01-11 | 삼성전자주식회사 | Method of fabricating aligned pattern on pattern formation area using imprint process |
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| KR20040074167A (en) * | 2003-02-17 | 2004-08-23 | 학교법인 포항공과대학교 | Method for preparing polymer micro needle array |
| KR20070110208A (en) * | 2006-05-13 | 2007-11-16 | 주식회사 에스앤에스텍 | Nano imprint blankmask, nano imprint stamp and its manufacturing method |
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| KR100527540B1 (en) * | 2004-01-15 | 2005-11-09 | 주식회사 하이닉스반도체 | Method for forming isolations of semiconductor devices |
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| KR20040074167A (en) * | 2003-02-17 | 2004-08-23 | 학교법인 포항공과대학교 | Method for preparing polymer micro needle array |
| KR20070110208A (en) * | 2006-05-13 | 2007-11-16 | 주식회사 에스앤에스텍 | Nano imprint blankmask, nano imprint stamp and its manufacturing method |
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