TW200922862A - Method of fabricating three-dimensional patterned structure using imprinting lithography process and photolithography process - Google Patents

Method of fabricating three-dimensional patterned structure using imprinting lithography process and photolithography process Download PDF

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TW200922862A
TW200922862A TW097107044A TW97107044A TW200922862A TW 200922862 A TW200922862 A TW 200922862A TW 097107044 A TW097107044 A TW 097107044A TW 97107044 A TW97107044 A TW 97107044A TW 200922862 A TW200922862 A TW 200922862A
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imprinting
dimensional structure
lithography
manufacturing
dimensional
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TWI360519B (en
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Se-Guen Park
Han-Hyoung Kim
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Inha Ind Partnership Inst
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
    • B81C1/00031—Regular or irregular arrays of nanoscale structures, e.g. etch mask layer
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0147—Film patterning
    • B81C2201/015—Imprinting
    • B81C2201/0153—Imprinting techniques not provided for in B81C2201/0152

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Analytical Chemistry (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

Disclosed herein is a method of fabricating a three-dimensional patterned structure using an imprint lithography process and a photolithography process, in which the height of a residual photoresist layer, which is problematic to control, is controlled by controlling only a process time in an imprint lithography process, and then a photolithography process is additionally performed, thus fabricating a new three-dimensional patterned structure without performing an additional process for removing the residual photoresist layer. The method of fabricating a three-dimensional patterned structure includes: (a) depositing a photoresist on a substrate through spin coating; (b) imprinting the deposited photoresist using a mold having a predetermined pattern at a predetermined temperature and pressure to fabricated a structure; and (c) providing a photo mask having a predetermined pattern on the fabricated structure and then exposing and developing the structure to form a three-dimensional patterned structure having a specific pattern.

Description

200922862 九、發明說明： 【發明所屬之技術領域】 本發明係一種利用於壓印工程的溫度、壓力、時間等 環境條件，將平坦之光阻劑形狀製作成具有多種高度、凹 凸不同形狀之製造三維構造物的方法，尤指一種以簡單的 方法控制工程時間就可以控制壓印後光阻劑的殘留層厚 度，不用另外進行殘留層的去除步驟就可以製造三維構造 物的製造方法。 【先前技術】 目前在利用半導體工程的微機電系統（Micr〇 ElectroMechanical System > MEMS)、微光學機械系統 (Micro-optomechanical systems ’ MOMS)、傳輸感應器和 半導體領域的發展及研究中，這些產業領域為生產高功 能、高性能的元件’因此對三維構造的需求和設計日漸提 局。 但是，一般製造三維構造物需要進行較多的步驟和使 用多種物質。為解決這樣的問題’有許多灰階光罩的光刻 法(gray mask photo-lithography )和壓印（imprint lithography)等進行研究，其中壓印（imprmt |ithography) 最被廣泛探討，因為這個工程比以往的光刻（photolithography ) 法具有更多的優點’但是進行壓印後會留有 殘留層（residual layer )，因此要利用02電漿（02 plasma) 進行消除。 200922862 【發明内容】 本發明者有鐘於現今壓印後會留有殘留層 (residual layer) 的、”因此以控制工程時間來控制壓印後光阻劑（photo resist)殘留層兩度的方法最後以光刻法（p⑽〇「他〇g「叩 來π成®此不需另外進行殘留層的去除，即可製造三維結構 物的方法。 本發月之主要目的係在於提供一種利用壓印及光刻工程製 造二維構造物的方法，其係包括： (a) 在基材（SUbstrate)上部旋轉（spin)塗鍍光阻劑（ph〇t〇 resist)的步骤； (b) 利用紀錄—定圖案的模型（mold)在上述（a)步骤中 沉積的光阻劑（photoresist)上以一定溫度及一定壓力進行壓 印（imprint)的步骤；；以及 (c) 將上述（b)步骤製造的構造物上設置光罩（ph〇t〇 mask)，然後藉由曝光（exp〇se)和顯影（deve丨叩）的過程 形成具有特定圖案的三维構造物。 其中，該溫度較佳為80〜1〇crC，更佳為9(rc。 其中該壓力為5〜1〇bar，更佳為8bar。 其中’該壓印時間較佳為1〜6〇秒。 藉由上述控制壓印後光阻劑（ph〇t〇 resjst)殘留層的高度 的方法，因此不需另外進行殘留層的去除，即可製造三維結構 物的方法。 【實施方式】 6 200922862 本發明的具體特徵及優點藉由附圖及實施方式做進一步的 闡述。 本發明係一種利用於壓印及光刻工程製造三維構造物的方 法，此方法請參考第一圖至第五圖。 第一圖係本發明利用壓印及光刻工程製造三維構造物方法 的整體流程圖。第二及三圖為第一圖之流程的詳細狀態示意 圖。 第一步驟：沉積光阻劑 請參看第一及二圖⑻所示，矽材質基材（sjlicone subst「ate)(20)的上部旋轉塗鍍沉積光阻劑（ph〇t〇 「esist)(s11〇)(i〇)，其係使用光阻劑是酚醛樹脂（n〇v〇丨ak)系列 的光阻劑（AZ9260，AZ Electronic Materials)(10)，疊層 20μΓη 後，在95C進行軟烤（S0ft_baking)，此時不僅可以使用光阻劑， 還可以使用光刻圖案的高分子。 第步驟：壓印 明參看第二圖（b)所示，利用紀錄一定圖案的模型（m〇|d ) ()在上述（a )步骤中沉積的光阻劑（ph〇t〇 resist) (10)上 以一疋溫度為80~100 〇c(較佳為9〇χ：)及一定壓力為 5〜10bar(較佳為8bar^行壓印（丨mprjnt) (s120)〇 此時模型會如第二⑼圖顯示出三維的陰刻結構，而在石夕基 材（20)上以鉻為黏結層沉積& (Au);在上述模型中，如第二 圖斤丁長度為8cm，上部寬度$ 6〇jJm，下部寬度& 5〇叫， =面π度為60Mm，上部和下部寬度形成5。傾斜，藉由上述模 K 0) b第二圖所不’光阻劑（1Q)的上部與模型具有相同的 200922862 長度、上部寬度、下部寬度、端面高度及上部和下部寬度間的 傾斜度；此時，藉由將壓印時間控制在>60秒，來控制殘留 層（residual layer)的厚度，可以使用擠壓流動方程式預測出 殘留層—丨丨aye「）的厚度，以該方程式中的變數為基礎 來測定在不同的壓印時間中殘留層（res丨dua丨丨aye「）的厚度。 第四圖是根根據壓印工程時間的殘留層高度變化曲線圖， 如圖所示，壓印時間為〇〜30秒間，壓印時間與殘留層高度按 比例降低，在壓印時間為30〜50秒之間，壓印時間與殘留層高 度減例降低會更為緩慢，因此藉由該特性可以簡單控制歹= 層高度。本實施例中’壓印工程時間設定為】秒至6〇秒，但 不用來限制本發明的範圍。 第二步驟：光刻（photo-丨ithography) 請參看二圖⑷所示，將由上述步驟製造而得的構造物上布 置光罩（Ph〇t〇 mask) (40)，藉由曝光（eXpose)和顯影 WP)工程形成如第二圖⑷所示具有特定 構 造物（S130)。 芦傅 具有如上述結構與特徵的本發明，與現有技術不同之處在 於 通過壓印及光阻劑工程而不用另外進行殘留層去除步驟，且殘 留層的高度能夠根據壓印的時間產生線性變化，故本發明具有 可提高三維構造物在製作上之可靠性的優點。本發月具有 出且料得知只諸由本發明所提供的方式就可以產生 比以往且古“圆茶且藉由先刻的方法可以簡單製造出 ，、有更複雜構造的三維圖案， 未且不需另外進行殘留層的 200922862 去除工程，具有提高整個工程可靠性的效果。 以上所述’僅是本發明的較佳實施例，並非對本發明作任 何形式上的限制’任何所屬技術領域中具有通常知識者，若在 不脫離本發明所提技術特徵㈣圍内，利用本發明所揭示技術 内容所做出局部更動或修飾等效實施例，並且未脫離本發明的 技術特徵内谷，均仍屬於本發明技術特徵範圍。 【圖式簡單說明】 第一圖：壓印和光刻工程製造三維構造圖的流程圖。 第二圖：係第一圖之流程的狀態示意圖。 第二圖.係本發明模型壓印光阻劑的示意圖。 第四圖：係本發明壓印時間與殘留層高度的曲線變化 圖。 【主要元件符號說明】 (S11 0 )經由旋轉塗佈使基材沉積光阻劑 (S120)光阻劑利用模型進行烙印 (S1 30)布置具有圖案的光罩進行曝光和顯影 (10)光阻劑 （20)基材 (30)模型 （4〇)光罩200922862 IX. Description of the Invention: [Technical Field] The present invention is an environmental condition in which temperature, pressure, time, and the like are used in an imprint process, and a flat photoresist shape is fabricated into a product having various heights, irregularities, and shapes. The method of three-dimensional structure, in particular, the method of controlling the residual layer thickness of the photoresist after imprinting by controlling the engineering time in a simple manner, and manufacturing the three-dimensional structure without separately performing the removal step of the residual layer. [Prior Art] These industries are currently developing and researching in the field of semiconductor engineering micro-electromechanical systems (MEMS), micro-optomechanical systems 'MOMS, transmission sensors, and semiconductors. The field is to produce high-performance, high-performance components', so the demand for 3D construction and design are getting better. However, in general, three-dimensional structures are required to perform a large number of steps and use a plurality of substances. In order to solve such problems, there are many gray mask photo-lithography and imprint lithography, among which imprinting (imprmt | ithography) is most widely discussed because of this project. It has more advantages than the conventional photolithography method. However, after the imprinting, there is a residual layer, so it is eliminated by using 02 plasma. 200922862 SUMMARY OF THE INVENTION The present inventors have a method of leaving a residual layer after the current imprinting, and thus controlling the engineering time to control the residual layer of the photoresist after photo imprinting. Finally, by photolithography (p(10) 〇 "there is no need to separately remove the residual layer, a three-dimensional structure can be produced. The main purpose of this month is to provide an embossing. And a method for fabricating a two-dimensional structure by lithography, comprising: (a) a step of spin coating a photoresist on a substrate (SUbstrate); (b) using a record a step of imprinting a mold of a pattern on a photoresist deposited in the above step (a) at a certain temperature and a certain pressure; and (c) performing the above step (b) A mask (ph〇t〇mask) is disposed on the manufactured structure, and then a three-dimensional structure having a specific pattern is formed by a process of exp (exp) and development (deve). wherein the temperature is preferably 80~1〇crC, more preferably 9(rc. where the pressure 5 to 1 〇bar, more preferably 8 bar. wherein 'the embossing time is preferably 1 to 6 sec.. The method for controlling the height of the residual layer of the photoresist after embossing by ph〇t〇resjst Therefore, a method for manufacturing a three-dimensional structure without separately removing the residual layer is provided. [Embodiment] 6 200922862 The specific features and advantages of the present invention are further illustrated by the accompanying drawings and embodiments. For the method of manufacturing a three-dimensional structure by imprinting and lithography engineering, please refer to the first to fifth figures. The first figure is an overall flow chart of the method for manufacturing a three-dimensional structure by using imprinting and lithography engineering. The second and third figures are the detailed state diagrams of the flow of the first figure. The first step: depositing the photoresist, please refer to the first and second figure (8), the upper part of the sjlicone subst "ate" (20) Coating deposited photoresist (ph〇t〇 "esist" (s11〇) (i〇), which uses photoresist as a phenolic resin (n〇v〇丨ak) series of photoresists (AZ9260, AZ Electronic Materials) (10), after stacking 20μΓη, soft at 95C (S0ft_baking), at this time, not only a photoresist but also a polymer of a lithographic pattern can be used. Step 1: Embossing, as shown in the second figure (b), using a model for recording a certain pattern (m〇|d () The photoresist (ph〇t〇resist) (10) deposited in the above step (a) has a temperature of 80 to 100 〇c (preferably 9 〇χ:) and a certain pressure of 5 〜 10bar (preferably 8bar^ embossing (丨mprjnt) (s120) 〇 At this time, the model will show a three-dimensional indented structure as shown in the second (9), and a chromium-bonded layer on the Shixi substrate (20). &(Au); In the above model, for example, the length of the second figure is 8 cm, the upper width is $6〇jJm, the lower width is & 5 〇, = surface π is 60 Mm, and the upper and lower widths are 5. Tilting, by the above-mentioned modulo K 0) b, the upper portion of the photoresist (1Q) has the same 200922862 length, upper width, lower width, end face height, and inclination between the upper and lower widths; At this time, by controlling the embossing time to > 60 seconds to control the thickness of the residual layer, the thickness of the residual layer - 丨丨aye ") can be predicted using the extrusion flow equation, in which the equation The variation is based on the thickness of the residual layer (res丨dua丨丨aye" in different imprinting times. The fourth graph is the residual layer height variation curve according to the imprinting time, as shown in the figure. The embossing time is 〇~30 seconds, the embossing time and the height of the residual layer are proportionally reduced. When the embossing time is between 30 and 50 seconds, the embossing time and the residual layer height decrease are slower, so This feature can be used to simply control the 歹=layer height. In this embodiment, the embossing engineering time is set to sec to 6 sec, but is not intended to limit the scope of the present invention. Second step: photo-丨ithography See the second picture (4) As shown, a reticle (40) is disposed on the structure manufactured by the above steps, and is formed by exposure (eXpose) and development WP) to have a specific structure as shown in the second figure (4). (S130) The present invention has the structure and features as described above, and differs from the prior art in that the residual layer removal step is performed by imprinting and photoresist engineering, and the height of the residual layer can be embossed according to The time has a linear change, so the present invention has the advantage of improving the reliability of the three-dimensional structure in production. This month, it is known that only the manner provided by the present invention can produce more than the ancient "round tea". Moreover, the three-dimensional pattern with more complicated structure can be easily manufactured by the method of the first engraving, and the 200922862 removal project without the residual layer is not required, and the reliability of the entire project is improved. The above description is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention. Any one of ordinary skill in the art can use the present invention without departing from the technical features (four) of the present invention. It is still within the technical scope of the present invention to make a partial change or modify an equivalent embodiment of the present invention without departing from the technical features of the present invention. [Simple description of the diagram] The first picture: the flow chart of the three-dimensional construction diagram of the imprinting and lithography engineering. The second picture is a state diagram of the flow of the first figure. Figure 2 is a schematic illustration of a model imprinted photoresist of the present invention. Fig. 4 is a graph showing the change of the embossing time and the residual layer height of the present invention. [Main component symbol description] (S11 0) Substrate deposition photoresist (S120) photoresist by spin coating is imprinted by a model (S1 30) A patterned mask is used for exposure and development (10) photoresist Agent (20) substrate (30) model (4 inch) mask

Claims (1)

200922862 十、申請專利範圍： 1 .一種利用壓印及光刻工程製造三維構造物的方法，係 包括： (a) 在基材（substrate)上部旋轉塗鍍沉積光阻劑（ph〇t〇 resist)的步骤； (b) 利用紀錄一定圖案的模型（m〇icj)在上述（a)步骤中 沉積的光阻劑（photoresist)上以一定溫度及一定壓力進行壓 印（imprint)的步骤；以及 (c) 將上述步骤製造的構造物上設置紀錄著一定圖案的光 罩’然後藉由曝光和顯影的過程形成具有特定圖案的三维構造 物。 2 .如申請專利範圍第1項所述的利用壓印及光刻工程製 造二維構造物的方法，藉由]控制上述（b)步驟壓印工程時間 來調整殘留層的厚度，其中該壓印步驟進行的時間為卜6〇秒。 3 .如申請專利範圍第1項所述的利用壓印及光刻工程製 造三維構造物的方法，其中該一定溫度為8〇〜1〇(rc。 4 .如中清專利範圍第3項所述的利用壓印及光刻工程製 造三維構造物的方法，其中該一定溫度為9(rc。 5 .如申#專利範圍第i項所述的利賴印及光刻工程製 造三維構造物的方法，其中該一定壓力為5〜i〇ba「。 6如申》月專利範圍第5項所述的利用壓印及光刻工程製 造三維構造物的方法’其中該m^ba「。 7如申月專利範圍第工項所述的利用虔印及光刻工程製 造三维構造物的方法，其中該模型為三維陰刻結構㈣基材上 200922862 以絡為黏結層沉積金。 、。=1Γ利範圍第1項所述的利用壓印及光刻工程製 4二維構4的方法’其中該棋型長度為8cm，上部寬度為 6〇μιη ,下部寬度為5〇 ·-' 度形成5。傾斜。 …度為¥ ’上部和下部寬 d槿Γ請專利範圍第1項所述的利賴印及光刻工程製 k二維構造物的方法，其中該基材為矽材質。 十一、囷式： 如次頁 11200922862 X. Patent application scope: 1. A method for manufacturing three-dimensional structures by using imprinting and lithography engineering, comprising: (a) spin coating deposition photoresist on the upper part of the substrate (ph〇t〇resist) (b) a step of imprinting at a certain temperature and a certain pressure on the photoresist deposited in the above step (a) using a model (m〇icj) recording a certain pattern; (c) A structure in which a pattern is recorded on the structure manufactured by the above steps is formed, and then a three-dimensional structure having a specific pattern is formed by a process of exposure and development. 2. The method for manufacturing a two-dimensional structure by imprinting and lithography engineering according to claim 1, wherein the thickness of the residual layer is adjusted by controlling the step (b) of the embossing process time, wherein the pressure is The printing step is performed for 6 seconds. 3. The method for manufacturing a three-dimensional structure by imprinting and lithography engineering according to claim 1, wherein the constant temperature is 8 〇 1 〇 (rc. 4) as in the third paragraph of the patent scope of the Chinese patent. The method for manufacturing a three-dimensional structure by using imprinting and lithography engineering, wherein the certain temperature is 9 (rc. 5), as described in the patent of the patent scope, item i, and the lithography engineering manufacture of the three-dimensional structure The method, wherein the certain pressure is 5 〜 〇 「 「 。 6 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如The method for manufacturing a three-dimensional structure by using a stencil printing and lithography engineering according to the work item of the patent scope of Shenyue, wherein the model is a three-dimensional indented structure (4) on the substrate 200922862, and the layer is deposited as a bonding layer of gold. The method of using the four-dimensional structure 4 by imprinting and lithography described in the first item, wherein the chess type has a length of 8 cm, an upper width of 6 〇 μιη, and a lower width of 5 〇·-' degrees to form 5. ...degree is ¥ 'the upper and lower widths d槿Γ please refer to the scope of the first item Lee Lai lithographic printing method and system engineering k-dimensional structure, wherein the substrate is a silicon material eleven, granary formula: such as hypophosphorous Page 11
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