KR100872747B1 - A semiconductor laser diode package - Google Patents

A semiconductor laser diode package Download PDF

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Publication number
KR100872747B1
KR100872747B1 KR1020070065956A KR20070065956A KR100872747B1 KR 100872747 B1 KR100872747 B1 KR 100872747B1 KR 1020070065956 A KR1020070065956 A KR 1020070065956A KR 20070065956 A KR20070065956 A KR 20070065956A KR 100872747 B1 KR100872747 B1 KR 100872747B1
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South Korea
Prior art keywords
laser diode
vertical plate
fixed
plate
piece
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KR1020070065956A
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Korean (ko)
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한규진
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주식회사 코스텍시스
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09—Processes or apparatus for excitation, e.g. pumping
    • H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
    • H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
    • H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
    • H01S3/09415—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode the pumping beam being parallel to the lasing mode of the pumped medium, e.g. end-pumping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/02—Constructional details
    • H01S3/04—Arrangements for thermal management
    • H01S3/0405—Conductive cooling, e.g. by heat sinks or thermo-electric elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/02208—Mountings; Housings characterised by the shape of the housings
    • H01S5/02212—Can-type, e.g. TO-CAN housings with emission along or parallel to symmetry axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/041—Optical pumping

Abstract

A semiconductor laser diode package is provided to reduce a manufacturing cost by forming a heat sink by punching a metal plate through a press. Forward bent guide pieces(32) are formed on both sides of a vertical plate(31) of a heat sink(30) composed of a metal plate. A laser diode(42) fixed at a front surface of the vertical plate is protected. A bent piece(33) and a circulation groove(33a) are formed in the bottom of both guide pieces to discharge the heat. A ground piece(34) is integrated in the bottom center of the vertical plate. Terminal pieces(41) are fixed on both sides of an insulating plate(40) fixed and attached to the rear of the vertical plate. Both terminal pieces are connected to the laser diode through a wire(42a).

Description

반도체 레이저 다이오드 패키지{a semiconductor laser diode package}Semiconductor laser diode package

도 1은 종래의 반도체 레이저 다이오드를 예시한 사시도,1 is a perspective view illustrating a conventional semiconductor laser diode;

도 2는 본 발명의 일실시예를 예시한 사시도,2 is a perspective view illustrating one embodiment of the present invention;

도 3은 본 발명의 일실시예를 예시한 분해 사시도,3 is an exploded perspective view illustrating an embodiment of the present invention;

도 4는 본 발명의 일실시예를 예시한 정면도,4 is a front view illustrating one embodiment of the present invention;

도 5는 본 발명의 일실시예를 예시한 평면도.5 is a plan view illustrating one embodiment of the present invention.

* 도면의 주요부분에 대한 부호의 설명 *Explanation of symbols on the main parts of the drawings

30 : 히트싱크 31 : 수직편30: heat sink 31: vertical piece

32 : 가이드편 33 : 절곡편32: guide piece 33: bending piece

33a : 유통홈 34 : 접지편33a: Distribution groove 34: Grounding piece

40 : 절연판 40a : 용접소재40: insulation plate 40a: welding material

41 : 단자편 42 : 레이저 다이오드41: terminal piece 42: laser diode

42a : 와이어42a: wire

본 발명은 반도체 레이저 다이오드 패키지에 관한 것으로서, 더욱 상세하게는 금속판재를 프레스로 펀칭하여 히트싱크를 제작함에 따라 제작비를 저렴하게 유지하고, 히트싱크의 양측에는 가이드편이 절곡 형성되어 레이저 다이오드의 보호가 용이하면서도 양측 가이드편의 하부에는 절곡편과 유통홈이 형성되어 방열(放熱) 효과를 높여 줄 수 있도록 한 발명에 관한 것이다.The present invention relates to a semiconductor laser diode package, and more particularly, to manufacture a heat sink by punching a metal plate with a press to maintain a low manufacturing cost, and guide pieces are bent on both sides of the heat sink to protect the laser diode. It is related to the invention to be easy to bend the lower side of the guide piece is formed with a bent piece and a distribution groove to increase the heat dissipation effect.

일반적으로, 레이저 다이오드(Laser Diode)에서 발진되는 레이저빔은 주파수 폭이 좁고 지향성이 높기 때문에 광통신, 다중통신, 우주통신 등과 같은 여러 분야에 응용되고 있다.In general, a laser beam oscillated from a laser diode has a narrow frequency width and high directivity, and thus has been applied to various fields such as optical communication, multiple communication, and space communication.

현대에는 원거리 통신 서비스에 대한 요구가 증가함에 따라 광통신 망과 함께 레이저 다이오드의 주요한 응용 분야 중의 하나인 광디스크 즉, 컴팩트 디스크 플레이어(Compact Disk Player) 및 컴팩트 디스크 재생/기록(Compact Disk Reading/Writing System)장치에서는 저 전류 발진이 가능하고 장시간 작동할 수 있는 우수한 특성을 갖는 레이저 다이오드가 요구되고 있다.As the demand for telecommunication services increases in modern times, optical disks, such as compact disk players and compact disk reading / writing systems, are one of the main applications of laser diodes with optical networks. There is a need for a laser diode having excellent characteristics capable of low current oscillation and long operation.

이와 같은 레이저 다이오드는 반도체 패키지로 구성되어 PCB 등에 고정되는 것으로서, 종래의 반도체 레이저 다이오드 패키지는 도 1에서 도시한 바와 금속판재로 이루어진 스템(10)의 상면에 렌즈(21)가 구비된 원통형 덮개(20)가 결합되고, 스템(10)의 상부로 돌출된 히트싱크(11)에는 레이저 다이오드(12)가 고정되어 레이저빔을 照射(조사)하며, 스템(10)의 상부에는 포토 다이오드(13)가 고정되어 레이저 다이오드(12)로부터 발산된 빔을 감지하고, 스템(10)에 관통 결합된 양측 단자 핀(14)들은 레이저 다이오드(12)와 포토 다이오드(13)와 각각 와이어로 연결되며, 스템(10)의 하부에는 접지핀(15)이 고정된 구성으로 되어 있고, 덮개(20)의 내부에는 불활성기체가 주입되어 레이저 다이오드(12)가 레이저빔을 조사할 수 있도록 구성되어 있다.Such a laser diode is configured as a semiconductor package and is fixed to a PCB. The conventional semiconductor laser diode package has a cylindrical cover provided with a lens 21 on an upper surface of a stem 10 made of a metal plate as shown in FIG. 20 is coupled, the laser diode 12 is fixed to the heat sink 11 protruding to the upper portion of the stem 10 to emit a laser beam, the photodiode 13 on the top of the stem 10 Is fixed to detect the beam emitted from the laser diode 12, the both terminal pins 14 through-coupled to the stem 10 are connected to the laser diode 12 and the photodiode 13 by wires, respectively. The ground pin 15 is fixed to the lower part of 10, and an inert gas is injected into the cover 20 so that the laser diode 12 can irradiate a laser beam.

그러나, 현대에는 반도체 기술의 발달로 인하여 덮개의 내부에 불활성기체를 주입하지 않더라도 레이저빔을 조사할 수 있는 레이저 다이오드들이 개발되어 있는 것이므로 덮개가 없는 레이저 다이오드 패키지의 제안이 절실히 요구되었다.However, in modern times, due to the development of semiconductor technology, laser diodes capable of irradiating a laser beam without developing an inert gas into the inside of the cover have been developed. Therefore, the proposal of a laser diode package without a cover is urgently required.

또한, 레이저 다이오드가 고정되는 히트싱크는 단순하게 육면체로 구성되어 열 방출의 효율을 높여줄 수 없었으므로 열 방출 특성이 양호한 히트싱크의 구조를 제안하게 되었다.In addition, since the heat sink to which the laser diode is fixed is simply composed of a hexahedron, it is not possible to improve the efficiency of heat dissipation. Therefore, a heat sink having good heat dissipation characteristics has been proposed.

본 발명은 상기한 문제점을 감안하여 창안한 것으로서, 그 목적은 금속판재를 프레스로 펀칭하여 히트싱크를 제작함에 따라 제작비를 저렴하게 유지하고, 히트싱크의 양측에는 가이드편이 절곡 형성되어 레이저 다이오드의 보호가 용이하면서도 양측 가이드편의 하부에는 절곡편과 유통홈이 형성되어 방열(放熱) 효과를 높여 줄 수 있는 반도체 레이저 다이오드 패키지를 제공함에 있는 것이다.The present invention has been made in view of the above problems, the object of which is to keep the manufacturing cost inexpensive by manufacturing a heat sink by punching a metal plate with a press, and the guide pieces are bent on both sides of the heat sink to protect the laser diode. It is to provide a semiconductor laser diode package that can be easy to increase the heat dissipation (buffer) by forming a bent piece and a distribution groove in the lower portion of both guide pieces.

상기한 목적을 달성하기 위한 본 발명의 특징은, 금속판재로 구성된 히트싱크(30)의 수직판(31) 양측에는 전방으로 절곡된 가이드편(32)들이 각각 형성되어 수직판(31)의 전면에 고정된 레이저 다이오드(42)가 보호되고, 양측 가이드편(32) 의 하부에는 절곡편(33)과 유통홈(33a)이 형성되어 열의 방출이 신속하게 이루어지며, 수직판(31)의 하부 중앙에는 접지편(34)이 일체로 형성되고, 수직판(31)의 후방에 부착되어 고정된 절연판(40)의 앙측에는 단자편(41)들이 고정되며, 양측 단자편(41)들은 레이저 다이오드(42)와 와이어(42a)로 연결된 것을 특징으로 하는 반도체 레이저 다이오드 패키지에 의하여 달성될 수 있는 것이다.Features of the present invention for achieving the above object, the front plate of the vertical plate 31 is formed on each side of the guide plate 32 bent forward on both sides of the vertical plate 31 of the heat sink 30 made of a metal plate material The laser diode 42 is fixed to the protection, and the lower side of the guide piece 32, the bent piece 33 and the distribution groove 33a is formed to release heat quickly, the lower portion of the vertical plate 31 The ground piece 34 is integrally formed at the center, and the terminal pieces 41 are fixed to the lateral side of the insulating plate 40 attached and fixed to the rear of the vertical plate 31, and both terminal pieces 41 are laser diodes. It can be achieved by a semiconductor laser diode package characterized in that the 42 and the wire 42a is connected.

이하, 상기한 목적을 달성하기 위한 바람직한 실시예를 첨부된 도면에 의하여 상세히 설명하면 다음과 같다.Hereinafter, described in detail by the accompanying drawings a preferred embodiment for achieving the above object is as follows.

도 2 내지는 도 5에서 도시한 바와 같이, 금속판재로 구성된 히트싱크(30)의 수직판(31) 양측에는 가이드편(32)들이 전방으로 절곡되어 있고, 수직판(31)의 전면에는 레이저 다이오드(42)가 고정되어 양측 가이드편(32)들에 의하여 안전하게 보호된다.2 to 5, the guide pieces 32 are bent forward on both sides of the vertical plate 31 of the heat sink 30 made of a metal plate, and a laser diode is formed on the front surface of the vertical plate 31. 42 is fixed and secured by both guide pieces 32.

상기 양측 가이드편(32)의 하부에는 "ㄷ"형으로 구부려진 절곡편(33)이 형성되어 있고, "ㄷ"형 절곡편(33)에는 유통홈(33a)이 형성되어 열의 방출이 신속하게 이루어질 수 있도록 구성되어 있다.The lower side of the guide piece 32 is formed with a bent piece 33 bent in the "c" shape, the "c" type bending piece 33 is formed with a distribution groove 33a to quickly release heat It is configured to be made.

즉, 수직판(31)에서 절곡된 가이드편(32)들과 "ㄷ"형 절곡편(33)에 의하여 공기와 접촉되는 전체적인 면적이 넓어지는 것이므로 레이저 다이오드(42)에서 발생되는 열이 수직판(31)을 통해 양측 가이드편(32)들과 절곡편(33)에 전달되면 유통홈(33a)들을 통해 신속하게 방출되어 열 방출특성을 최대한 높여줄 수 있는 것 이다.That is, since the overall area in contact with the air is widened by the guide pieces 32 and the "c" type bending pieces 33 which are bent in the vertical plate 31, the heat generated by the laser diode 42 is vertical. When delivered to both guide pieces 32 and the bending piece 33 through the 31 is to be quickly released through the distribution groove (33a) is to maximize the heat release characteristics.

상기 수직판(31)의 하부 중앙에는 접지편(34)이 일체로 형성되어 있고, 수직판(31)의 후방에는 세라믹(Al2O3)으로 이루어진 절연판(40)이 부착되어 견고하게 고정되어 있다.A ground piece 34 is integrally formed at the lower center of the vertical plate 31, and an insulating plate 40 made of ceramic (Al 2 O 3 ) is attached to the rear of the vertical plate 31 to be firmly fixed. have.

상기 절연판(40)은 용접소재(40a)가 잘 부착되도록 패턴이 구성된다.The insulating plate 40 is configured with a pattern so that the welding material 40a is well attached.

상기 절연판(40)은 은(Ag)과 구리(Cu)의 합금인 용접소재(40a)에 열을 가하여 수직판(31)의 후면에 견고하게 고정되고, 절연판(40)의 일부는 접지편(34)의 양측으로 노출된다.The insulating plate 40 is firmly fixed to the rear surface of the vertical plate 31 by applying heat to the welding material 40a, which is an alloy of silver (Ag) and copper (Cu), and a part of the insulating plate 40 is grounded ( 34) are exposed on both sides.

상기 용접소재(40a)는 은(Ag) 20∼95중량％와 구리(Cu) 5∼80중량％의 합금으로 구성되어 200∼400℃의 열에 용융되면서 고정된다.The welding material 40a is composed of an alloy of 20 to 95% by weight of silver (Ag) and 5 to 80% by weight of copper (Cu), and is fixed while being melted in a heat of 200 to 400 ° C.

상기 접지편(34)의 양측으로 노출된 절연판(40)에는 단자편(41)들이 고정되어 있고, 양측 단자편(41)들은 레이저 다이오드(42)와 와이어(42a)로 연결되어 있다.Terminal pieces 41 are fixed to the insulating plate 40 exposed to both sides of the ground piece 34, and both terminal pieces 41 are connected to the laser diode 42 by a wire 42a.

상기 단자편(41)들도 용접소재(40a)에 의하여 절연판(40)에 고정되어 수직판(31)과 절연 상태를 유지하고 있다.The terminal pieces 41 are also fixed to the insulating plate 40 by the welding material 40a to maintain an insulation state with the vertical plate 31.

상기 히트싱크(30)의 재질을 철, 순동, 철과 니켈합금 또는 동과 니켈 합금으로 제조하는 것이 바람직하다.The heat sink 30 is preferably made of iron, pure copper, iron and nickel alloys or copper and nickel alloys.

이상에서는 본 발명의 바람직한 실시예에 대하여 도시하고 또한 설명하였으나, 본 발명은 상기한 실시예에 한정되지 아니하며, 청구범위에서 청구하는 본 발 명의 요지를 벗어남이 없이 당해 본 발명이 속하는 분야에서 통상의 지식을 가진 자라면 누구든지 다양한 변형 실시가 가능한 것은 물론이고, 그와 같은 변경은 기재된 청구범위 내에 있게 된다.Although the above has been illustrated and described with respect to the preferred embodiments of the present invention, the present invention is not limited to the above-described embodiments, and the present invention without departing from the gist of the present invention claimed in the claims is common in the art to which the present invention pertains. Various modifications can be made by those skilled in the art, and such modifications are intended to fall within the scope of the appended claims.

이상에서 상술한 바와 같이, 본 발명에 의한 히트싱크(30)는 금속판재를 프레스로 가공하여 제작하는 것이므로 대량생산이 가능하면서도 가격을 저렴하게 유지할 수 있는 등의 이점이 있는 동시에 수직판(31)에서 절곡된 가이드편(32)들과 "ㄷ"형 절곡편(33)에 의하여 공기와 접촉되는 전체적인 면적이 넓어지는 것이므로 레이저 다이오드(42)에서 발생되는 열이 수직판(31)을 통해 양측 가이드편(32)들과 절곡편(33)에 전달되면 유통홈(33a)들을 통해 신속하게 방출되어 열 방출특성을 최대한 높여줄 수 있는 것으로서 반도체 레이저 다이오드 패키지의 대외 경쟁력을 최대한 높여줄 수 있는 등이 이점이 있는 것이다.As described above, since the heat sink 30 according to the present invention is manufactured by processing a metal plate by pressing, the vertical plate 31 has the advantage of being able to mass-produce and maintain the price at a low cost. Since the overall area in contact with the air by the guide piece 32 and the "c" type bending piece 33 bent in the wider, the heat generated from the laser diode 42 is guided through the vertical plate 31 When delivered to the pieces 32 and the bending piece 33 can be quickly released through the distribution grooves (33a) to maximize the heat emission characteristics, such as to maximize the external competitiveness of the semiconductor laser diode package There is an advantage.

Claims (4)

금속판재로 구성된 히트싱크(30)의 수직판(31) 양측에는 전방으로 절곡된 가이드편(32)들이 각각 형성되어 수직판(31)의 전면에 고정된 레이저 다이오드(42)가 보호되고, 양측 가이드편(32)의 하부에는 열의 방출이 이루어지게 절곡편(33)과 유통홈(33a)이 형성되며, 수직판(31)의 하부 중앙에는 접지편(34)이 일체로 형성되고, 수직판(31)의 후방에 부착되어 고정된 절연판(40)의 앙측에는 단자편(41)들이 고정되며, 양측 단자편(41)들은 레이저 다이오드(42)와 와이어(42a)로 연결된 것을 특징으로 하는 반도체 레이저 다이오드 패키지.Guide plates 32 bent forward are formed on both sides of the vertical plate 31 of the heat sink 30 made of a metal plate, so that the laser diodes 42 fixed to the front surface of the vertical plate 31 are protected. A bent piece 33 and a distribution groove 33a are formed in the lower part of the guide piece 32 so that heat is released, and a ground piece 34 is integrally formed at the center of the lower part of the vertical plate 31, and a vertical plate is formed. The terminal pieces 41 are fixed to the lateral side of the insulating plate 40 attached and fixed to the rear of the 31, and both terminal pieces 41 are connected to the laser diode 42 by a wire 42a. Laser diode package. 제 1항에 있어서,The method of claim 1, 상기 절연판(40)은 은(Ag)과 구리(Cu)의 합금인 용접소재(40a)에 열을 가하여 수직판(31)의 후면에 고정되고, 절연판(40)의 일부는 접지편(34)의 양측으로 노출되도록 한 것을 특징으로 하는 반도체 레이저 다이오드 패키지.The insulating plate 40 is fixed to the rear surface of the vertical plate 31 by applying heat to the welding material 40a, which is an alloy of silver (Ag) and copper (Cu), a part of the insulating plate 40 is a ground piece 34 A semiconductor laser diode package, characterized in that exposed to both sides of the. 제 1항에 있어서,The method of claim 1, 상기 히트싱크(30)의 재질은 철이거나, 순동이거나, 철과 니켈합금이거나 또는 동과 니켈합금 중 어느 하나인 것을 특징으로 하는 반도체 레이저 다이오드 패 키지.The material of the heat sink 30 is a semiconductor laser diode package, characterized in that any one of iron, pure copper, iron and nickel alloy or copper and nickel alloy. 제 1항에 있어서,The method of claim 1, 상기 절연판(40)은 세라믹(Al2O3)으로 이루어지며, 용접소재(40a)가 잘 부착되도록 패턴이 구성됨을 특징으로 하는 반도체 레이저 다이오드 패키지.The insulating plate 40 is made of ceramic (Al 2 O 3 ), the semiconductor laser diode package, characterized in that the pattern is configured so that the welding material (40a) is attached well.
KR1020070065956A 2007-07-02 2007-07-02 A semiconductor laser diode package KR100872747B1 (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022188473A1 (en) * 2021-03-10 2022-09-15 青岛海信宽带多媒体技术有限公司 Optical module

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05129730A (en) * 1991-11-06 1993-05-25 Rohm Co Ltd Mold type semiconductor laser device
JP2003179292A (en) 2001-12-10 2003-06-27 Sharp Corp Semiconductor laser and its manufacturing method
KR20050029010A (en) * 2003-09-19 2005-03-24 삼성전기주식회사 A semiconductor laser diode having a lead frame of pcb tpye
JP2005286136A (en) 2004-03-30 2005-10-13 Sharp Corp Semiconductor laser device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05129730A (en) * 1991-11-06 1993-05-25 Rohm Co Ltd Mold type semiconductor laser device
JP2003179292A (en) 2001-12-10 2003-06-27 Sharp Corp Semiconductor laser and its manufacturing method
KR20050029010A (en) * 2003-09-19 2005-03-24 삼성전기주식회사 A semiconductor laser diode having a lead frame of pcb tpye
JP2005286136A (en) 2004-03-30 2005-10-13 Sharp Corp Semiconductor laser device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022188473A1 (en) * 2021-03-10 2022-09-15 青岛海信宽带多媒体技术有限公司 Optical module

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