KR100869096B1 - cutting and processing method for IR cut-off filter - Google Patents

Abstract

The present invention relates to an infrared cut filter used in an optical device, and more particularly, in the manufacture of a plurality of infrared cut filters having a predetermined dimension and shape by cutting a disc, while simultaneously producing a large number of infrared cut filters. The present invention relates to a cutting and processing method of an infrared cut filter used in an optical device to improve the manufacturability of the infrared cut filter and to increase productivity.

Tempered Glass, Infrared Cut Filter, Wafer, Dicing Tape, Frame, Dicing Process

Description

Cutting and processing method for IR cut-off filter

1A is a plan view showing a frame structure in which a conventional wafer is mounted.

1B is a plan view showing a frame structure in which a wafer is mounted in accordance with an embodiment of the present invention.

FIG. 2A is a perspective view illustrating a chuck structure of a frame on which a wafer is mounted and a dicing apparatus according to an exemplary embodiment. FIG.

FIG. 2B is a perspective view illustrating a chuck structure of a frame on which a wafer is mounted and a dicing apparatus according to an embodiment of the present invention; FIG.

3 is a cross-sectional view showing a frame on which a wafer is mounted, a chuck of a dicing facility, and a base structure according to an embodiment of the present invention.

Figure 4a is a plan view and a side cross-sectional view schematically showing a conventional infrared cut filter cutting process.

Figure 4b is a plan view and a side cross-sectional view schematically showing an infrared cut filter cutting process according to the present invention.

<Brief description of symbols for the main parts of the drawings>

110: wafer 120: wafer

200: round frame 210, 310: inner seating surface

220, 320: frame portion 300: square frame

400: dicing tape 500; Chuck's Bass

The present invention relates to an infrared cut filter used in an optical device, and more particularly, to fabricate a plurality of infrared cut filters having a predetermined size and shape by cutting a wafer, which is a disc, to produce a large number of infrared cut filters at the same time. The present invention relates to a cutting processing method of an infrared cut filter used in an optical device that can improve the manufacturability of the infrared cut filter and further increase productivity, and a frame structure therefor.

Recently, as the components related to imaging such as CMOS and CCD, which are digital image sensors, have been gradually miniaturized, image recognition optical devices have been miniaturized, making it easy to carry. Also, a small digital camera is used in a mobile phone. It is equipped with an Infrared Ray Cut Off Filter. In this case, the infrared cut-off filter transmits only visible light that reaches the digital imager to convert optical image information into an electrical signal, and infrared rays are reflected or absorbed to reach the digital imager CCD or CMOS. It is to prevent it.

And the thickness of the infrared cut filter is mainly made of 0.1 ~ 1.0 mm size, the shape is made of circular or square and various other shapes depending on the shape of the installation portion of the product on which the digital imager is installed and the manufacturing method of the module.

According to the prior art, one wafer 110 for manufacturing an infrared cut filter is attached to a frame 200 having a disc shape, and the wafer 110 is attached to a dicing tape using a tape mounter, and then mounted on a chuck of a dicing equipment. Dicing or sawing was then performed. In this case, in general, the wafer 110 has a width of 77 mm * length 77 mm, a width of 100 mm * length 100 mm, a maximum of 127 mm * length 127 mm, and the frame 200 is 6 inches to 8 inches. Size.

However, in the present case, the dicing or sawing equipment is mainly used for dicing or sawing equipment, which is a semiconductor wafer cutting processing facility. This means that as the equipment is widely distributed in Korea, optical component companies are also widely using the equipment for semiconductors as glass cutting processing equipment.

However, since most of the semiconductor equipment used in the dicing process such as the circular frame 200 and other tools and auxiliary materials are expensive equipment prices, they are suffering a lot of difficulties in price competitiveness. In addition, in the case of cutting a semiconductor wafer, since most of the frame 200 is circular, there is a disadvantage in that its work efficiency is lower than that of the frame 200 standard in mounting and mounting a rectangular wafer 110.

Therefore, a number of repetitive tape mounter and cut processes and spin dryer processes must be performed. Therefore, a number of repeated work processes are required until the product is made into a product, and thus process time and cost are consumed, resulting in workability and productivity. There was a problem of this deterioration.

The present invention is designed to solve the above-described conventional problems, by using a single rectangular frame designed by the present invention to be able to cut four wafers at a time (Dicing), and the number of frames used in the cutting process The main purpose is to reduce the cost of the tape, thereby reducing the material cost.

Further, another object of the present invention is to enable a cutting process that can increase productivity by allowing a frame to be used to produce a larger number of infrared cut filters in a single wafer cutting process.

Another object is to reduce the tape mounting and cutting process and the spin dryer process that is repeated during the conventional cutting process to shorten the required process to reduce the working time.

Infrared cut filter manufacturing method of the present invention for achieving the above object comprises the steps of: a) mounting a wafer of a predetermined size on the frame; b) attaching a dicing tape to one side of the mounted wafer; c) cutting the taped wafer along a line of defined specification using a cutting tool; d) spin-drying the wafer surface for the cleaning of particles that may occur during cutting by rotating the wafer at which the cutting operation is completed by centrifugal drying at high speed; And e) a UV irradiation step of irradiating ultraviolet rays to reduce the adhesive force so that the attached dicing tape can be easily peeled off. In the method of cutting an infrared cut filter, the wafer before cutting is a wafer having a square shape of a predetermined standard. Characterized in that it is one wafer in which the sheets are aligned or joined in a 2 * 2 array.

Preferably, the frame is composed of an inner seating surface for seating the wafer before cutting and a frame face formed outside the seating surface, and facilitates mounting of the wafer and can double the area-use efficiency of the dicing tape. It is characterized in that the structure is approximately square shape.

Preferably, the specification of the square frame is characterized in that the horizontal 270 ~ 300 * vertical 270 ~ 300 * height 1.0 ~ 2.0mm range.

Preferably, the specification of the square shape before the cutting is characterized in that the horizontal 200 ~ 220 * vertical 200 ~ 220mm range.

Preferably, the wafer before cutting further comprises a wafer coating process before cutting to coat the tempered glass having a size of 100 ~ 110 * length 100 ~ 110mm in the pre-cutting process, in order to cut into a single wafer consisting of one wafer It is characterized by.

First, the coating step and the cutting step of the infrared cut filter will be described briefly as follows. For the coating and cutting steps before and after the step is not the core of the present invention will be omitted.

The coating step is to perform IR coating on one side of the tempered glass polished in the whole process and anti reflection coating on the other side. This is to filter and allow only visible light of shorter wavelength to pass through.

In the cutting or sawing step, a thin film for long wavelength filtration is deposited through the coating step, and heat is applied to the entire wafer, and the desired shape is obtained by cutting the wafer using the prepared cutting tool. It is cut with an infrared cut filter having a size of. At this time, the shape of the infrared filter to be cut is cut into any one of a circle or a square.

Hereinafter, a structure according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings. 1B is a plan view illustrating a frame structure on which a wafer is mounted according to an embodiment of the present invention, and FIG. 2B illustrates a chuck structure of a ring frame and dicing equipment on which a wafer is mounted according to an embodiment of the present invention. 3 is a cross-sectional view illustrating a frame on which a wafer is mounted, a chuck of a dicing facility, and a base structure according to an embodiment of the present invention.

First, a brief description of the infrared cut filter cutting process according to the present invention. The cutting process sequence is

a) mounting a predetermined size wafer on the frame;

b) attaching a dicing tape to one side of the mounted wafer;

c) cutting the taped wafer according to a predetermined specification using a cutting tool;

d) a spin-drying step of rotating the wafer at which the cutting operation is completed by centrifugal drying at high speed to clean the wafer surface for cleaning the particles which may occur during cutting; And

e) a UV irradiation step of irradiating ultraviolet rays in order to lower the adhesive force so that the attached dicing tape can be easily peeled off; And

f) attaching a release tape to the upper surface of the dicing tape to sequentially remove the dicing tape whose adhesive strength is lowered from the wafer surface.

The a) ~ e) is an essential step, the step f) is a process that can be selected to easily perform tape peeling.

In the step a), the wafer before the cutting to be mounted is a wafer having a structure of aligning or combining a wafer having a square shape of 100 to 110 * 100 to 110 mm in length cut in the first cutting process in a 2 * 2 array ( 120).

To this end, the shape of the frame 300 used in the present invention is configured such that the inner seating surface 310 has a substantially square shape to facilitate mounting of the wafer 120 before cutting.

In step b), the dicing tape 400 is adhered to the one surface of the wafer 120 as a protective tape. The dicing tape 400 should have the following characteristics. In the cutting process of the wafer 120, frictional heat may occur due to the rotation of the blade, and in order to reduce the friction, the blade may have an adhesive force that can withstand the flow rate and pressure of the cleaning liquid, such as DI water, and the blade may move the wafer. Before cutting, it must have high transparency so that the cutting line can be projected to see the cutting position.

In the step c), it is common to use a cutter having a structure in which a blade rotating at a high speed in a fixed position arbitrarily fixed in the cutting process, or a laser having a specific energy. Using such a cutter, cutting is performed according to a standard formed on the wafer 120. In this case, a mounting tape having a predetermined size may be attached to the inner mounting surface 310 of the frame 300 to prevent the chip from being separated due to the cutting.

In the step d), spin dying is a process for drying and smoothing the surface by rotating the coupling wafer 120 at high speed to remove particles or foreign matter that may be formed in the previous cutting process. to be.

In the step e), UV (Ultra Violet) irradiation is a process using the dicing tape characteristics that the adhesive force is lowered by irradiating ultraviolet rays, by using this characteristic to the dicing tape 400 of the wafer 120 It can be easily separated from the surface.

In step f), the base dicing tape 400 is removed using another adhesive tape such as a release tape. This is an optional process, after the wafer 120 is cut by a plurality of infrared filters by a cutter, the release tape is again attached onto the dicing tape 400, and then the release tape is peeled off from the surface of the wafer so that the dicing tape is together. It is a method of peeling off. This is a removal process of the dicing tape 400 is performed in the state in which the adhesion between the surface of the wafer and the dicing tape to be formed is low, the adhesion to the release tape is relatively strong.

Structural features of the present invention is to attach the dicing tape 400 to one surface of the wafer 120 for the cutting process and the wafer 120 for the infrared cut filter fabrication applied in the a) process, b) process. The characteristics of the frame 300 to be described, which will be described in detail below.

First, as described above, as described above, a single wafer having a square shape having a width of 100 to 110 * length of 100 to 110 mm, which is cut in the first cutting process before the cutting to be mounted on the frame 300, is separately manufactured. The wafer 120 having four single wafers aligned or combined into one structure is manufactured by aligning and combining the arrays in a 2 * 2 array so as to be applicable to one frame size and structure.

In this case, in order to cut 4 wafers at once, the coating design and the tooling are used in accordance with the present invention when the tempered glass (standard, horizontal 100 ~ 110 * vertical 100 ~ 110mm) is coated in the previous coating process. This is preferred. In addition, the tempered glass forming the wafer 120 has been recently adopted in accordance with the increase in the number of camera pixels, it is preferable to polish both sides.

And preferably, at this time, the wafer 120 before cutting is configured in a horizontal 200 ~ 220 * length 200 ~ 220 mm size.

This wafer 120 structure can be mounted on the coating jig used in the wafer surface coating process prior to the cutting process to increase the wafer area that can be coated, thereby doubling its working efficiency in one coating operation.

On the other hand, the frame 300 protrudes a predetermined height upward from the inner mounting surface 310 and the inner surface of the seating surface 310 for seating the wafer 120 before the cutting to give stability to the wafer 120 seating And when the dicing tape 400 is attached to the surface of the wafer 120, it is composed of a frame surface 320 to attach the end surface of the dicing tape 400, this frame 300 is cut In the process, it is an essential basic component to automatically load, transport and support the frame for manufacturing the infrared cut filter.

In addition, the shape of the frame 300 used in the present invention is configured such that the inner seating surface 310 has a substantially square shape to facilitate mounting of the wafer 120 having the square structure.

In this case, the frame 300 is preferably manufactured in the horizontal 270 ~ 300 * vertical 270 ~ 300 * height 1.0 ~ 2.0mm standard. And, the inner seating surface 310 is preferably configured to have a horizontal 230 ~ 250 * vertical 230 ~ 250 mm size.

In addition, the wafer 120 according to the present invention has a greater efficiency in using a dicing tape and an infrared filter, even when the wafer structure is applied to a conventional circular frame as well as a square frame structure according to the present invention.

More specifically, in the one-time cutting process according to the transfer of each individual frame 300, the 127 * vertical 127 mm wafer 110, which is the maximum size of the existing single wafer, is mounted on the circular frame 200 and cut. Compared to the case, the production quantity is 3.2 times more effective.

In the process of obtaining a plurality of chips while having a predetermined dimension and shape in a chip shape during the wafer cutting process, the efficiency of obtaining an infrared filter per hour (Tact / time) is approximately 1.5 times larger than that of a conventional wafer cutting process. .

As described above, when the wafer 120 and the square frame 300 manufactured according to the specification and the shape according to the embodiment are applied to the existing infrared cut filter cutting process, the infrared cut filter production efficiency may be reconsidered. Can be.

Of course, in order to apply the structure of the wafer 120 and the square frame 300 having the above characteristics to the cutting process, although not described in detail, chuck and alignment equipment among cutting equipments are used. Of course, a number of parts specifications, including the design and manufacture according to the wafer 120 and the frame 300 standards are natural.

In addition, when the dicing process is performed using the dedicated rectangular frame 300 devised by the present invention, the process is reduced to six steps from the conventional ten steps. The six step process is shown in FIG. 4B.

As shown, ① primary tape mounting process → ② dicing process → ③ spin-drying process → ④ UV irradiation process → ⑤ secondary tape mounting process → ⑥ secondary tape cut process can be shortened.

In another embodiment, a wafer cutting process may be performed by stacking two or more wafers having the above-described structure. In this case, it is preferable that the paper coated with the adhesive be embedded at regular intervals between the wafers so that the wafer characteristics to be stacked during the lamination step do not change and the separation between the wafers is easy.

 As described above, although the present invention has been described by way of limited embodiments and drawings, the present invention is not limited thereto and is intended by those skilled in the art to which the present invention pertains. Of course, various modifications and variations are possible within the scope of equivalents of the claims to be described.

As described in detail above, when the wafer dicing method according to the present invention is used, four wafers can be cut at a time by using one dedicated rectangular frame designed by the present invention. It is possible to reduce the number of frames used and the cost of dicing tape, thereby reducing the material cost.

In addition, by using a rectangular frame to produce a larger number of infrared cut filter in one wafer cutting process can increase the productivity and shorten the required process to reduce the working time.

Claims (5)

a) mounting a predetermined size wafer on the frame; b) attaching a dicing tape to one side of the mounted wafer; c) cutting the taped wafer along a line of defined specification using a cutting tool; d) a spin-drying step of rotating the wafer at which the cutting operation is completed by centrifugal drying at a high speed to clean the wafer surface for cleaning the particles which may occur during cutting; And e) a UV irradiation step of irradiating ultraviolet rays to reduce the adhesive force so that the attached dicing tape can be easily peeled off; Before the c) step before the cutting is an infrared cut filter cutting method characterized in that one wafer is arranged or combined in a 2 * 2 array of four wafers separated after cutting in a square shape of a predetermined standard. The method of claim 1, The frame is composed of an inner seating surface for seating the wafer before cutting and a frame face formed outside the seating surface, so as to facilitate mounting of the wafer before cutting and to double the area-use efficiency of the dicing tape. Infrared cut filter cutting processing method characterized in that the square structure. The method according to claim 1 or 2, The frame is a cutting method of infrared cut filter, characterized in that the horizontal 270 ~ 300 * length 270 ~ 300 * height 1.0 ~ 2.0mm range. The method according to claim 1 or 2, The wafer before cutting the cutting method of infrared cut filter, characterized in that the horizontal 200 ~ 220mm * vertical 200 ~ 220mm range. The method of claim 1, The wafer before cutting is composed of one wafer to cut at a time, prior to the cutting process of step (c), before the cutting process to coat the reinforced glass having a size of 100 ~ 110 * length 100 ~ 110mm width further before cutting Infrared cut filter cutting processing method comprising

Images