KR100868192B1 - Method of manufacturing semiconductor single crystal using variable magnetic field control, apparatus using the same and semiconductor single crystal ingot - Google Patents

Abstract

The oxygen density can be controlled by using the magnetic field. The optimum magnetism condition for the manufacture of the semiconductor single crystal whose diameter is 8 inch or greater can be provided. A method for manufacturing the semiconductor single crystal using the Czochralski method is provided. Magnetic field is applied in the quartz crucible(10) in the semiconductor crystal growing. The magnetic field rate of the quartz crucible is fixed at each region of the quartz crucible. With maintaining the convection of the semiconductor melt, the intensity of the magnetic field is changed to control concentration of the oxygen flowed in the semiconductor crystal. The magnetic field is provided by the top coil(M1) and the lower coil(M2) installed around the quartz crucible.

Description

Method of manufacturing semiconductor single crystal using variable magnetic field control, Apparatus using the same and Semiconductor single crystal ingot}

The following drawings attached to this specification are illustrative of preferred embodiments of the present invention, and together with the detailed description of the invention to serve to further understand the technical spirit of the present invention, the present invention is a matter described in such drawings It should not be construed as limited to

FIG. 1 is a diagram showing a simulation of the position of the ZGP when the R values of the asymmetric magnetic fields are 1.36 and 2.3 when an 8-inch silicon single crystal is grown by applying a cusp type asymmetric magnetic field.

FIG. 2 is a diagram illustrating a simulation of a convective distribution of silicon melt corresponding to the magnetic field distribution of FIG. 1.

3 is a block diagram of a semiconductor single crystal manufacturing apparatus according to a preferred embodiment of the present invention.

4 is a view showing a simulation of the flow of the silicon melt according to the change in magnetic field strength at the same magnetic field ratio in accordance with the present invention.

5 is a table showing the results of oxygen concentration control according to the change in the magnetic field for each single crystal length.

FIG. 6 is a table illustrating a result of measuring amorphous quality level DSOD (Direct Surface Oxide Defect) of Examples 1 and 2 of FIG. 5.

<Description of main reference numerals in the drawings>

10: quartz crucible 20: crucible support

30: crucible rotating means 40: heating means

50: heat insulation means 60: single crystal pulling means

70: heat shield means 100: auxiliary magnet

C: silicon single crystal M: coil assembly

M1: upper coil M2: lower coil

SM: Silicone Melt

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to the production of semiconductor single crystals by the Czochralski method, and more particularly, to a method for producing high quality single crystals by controlling the oxygen concentration flowing into the semiconductor single crystals using a magnetic field, and a device and a semiconductor single crystal ingot. It's about (ingot).

At present, in the production of silicon single crystal using the Czochralski method, a quartz crucible has been essentially used to contain the melted silicon melt by a heater. However, the quartz crucible dissolves in the melt together with the reaction with the silicon melt to be transferred to SiOx form and eventually incorporated into the single crystal through the solid-liquid interface. SiOx incorporated into a single crystal acts as a gettering site for metal impurities during semiconductor processing by enhancing wafer strength and forming micro internal defects (BMD), and on the other hand, by causing various crystal defects and segregation. Eventually, it becomes a factor that adversely affects the yield of semiconductor devices. Therefore, when growing silicon single crystal using Czochralski method, it is necessary to appropriately control the oxygen concentration flowing into the single crystal through the solid-liquid interface.

Conventionally, a method of improving the design of a hot zone (H / Z) has been mainly used as a method for controlling the oxygen concentration introduced into a single crystal. That is, a method of controlling the dissolution rate of the quartz crucible by adjusting the length of the heater, the supply power, the relative position between the heater and the quartz crucible, and the like has been used.

However, the method of controlling the oxygen concentration of a single crystal by changing the design of the hot zone is not only troublesome to design the hot zone individually according to the various oxygen concentration quality levels of the wafer required by the customer, but also to replace the hot zone. Therefore, it takes a lot of time, the test operation cost of the single crystal growth apparatus is increased due to the replacement of the hot zone, and the prime length of the single crystal that can be commercialized is short, so there are not many wafers that can be produced per single crystal ingot.

Another method for controlling the oxygen concentration of a single crystal is a parameter control method, which controls the movement path of SiOx by convection by controlling the ratio of the rotation speed of the single crystal to the rotation speed of the quartz crucible or the top of the silicon melt along the outer surface of the single crystal. A method of controlling the oxygen concentration in the single crystal by controlling the flow rate of the argon gas supplied to the furnace to effectively discharge the SiOx gas evaporated from the surface of the silicon melt. However, this parameter control method has a disadvantage in that it is not easy to implement various levels of oxygen concentration in the longitudinal direction of the single crystal and cannot be produced due to resonance phenomenon or single crystal abnormal growth depending on the rotation rate.

Another method for controlling the oxygen concentration of a single crystal is to control the oxygen concentration by suppressing the crucible by forming a cusp type magnetic field or a horizontal type magnetic field by a superconducting horizontal magnet.

Conventionally, a method of controlling the elevation of oxygen concentration by changing the convection pattern of silicon melt by controlling the magnetic field ratio of each point inside the quartz crucible along the single crystal growth length direction has been widely used. In this regard, FIGS. 1 and 2 show R (R), which is a ratio of the _upper magnetic field strength (G _upper ) intensity and the lower magnetic field strength (G _lower ) relative to ZGP (Zero Gauss Plane 90) where the vertical component of the magnetic field is zero. The simulated magnetic field distribution and the convection pattern are shown for the case where G _lower / G _upper ) is changed from 1.36 to 2.3.

Referring to FIG. 1, it can be seen that the position of the ZGP 90 increases as the R value increases from 1.36 to 2.3. Referring to FIG. 2, the bottom curved point A of the quartz crucible sidewall and the outermost point B of the solid-liquid interface are referred to. In addition, it can be seen that the convection speed of the silicon melt is reduced at both the bottom C of the quartz crucible and the oxygen concentration can be controlled. Specifically, the convection velocity is reduced from 3.2 cm / s to 2.7 cm / s at point A, from 2.3 cm / s to 2.2 cm / s at point B and from 1.6 cm / s to 1.4 cm / s at point C.

However, this method of changing the magnetic field ratio can have an effective effect in terms of oxygen concentration control, but the quality of the crystal is changed due to the change of the convection pattern, and thus there is a weak point that it is difficult to achieve the defect quality.

The present invention was devised to solve the above-mentioned problems of the prior art, and in controlling the oxygen concentration during single crystal growth by the Czochralski method, the structure of the hot zone, process parameters, and silicon contained in the quartz crucible It is an object of the present invention to provide a method for manufacturing a semiconductor single crystal and a device for manufacturing a semiconductor single crystal ingot manufactured by the method and controlling the oxygen concentration at a desired level by controlling the oxygen concentration using a magnetic field without changing the convection form of the melt. have.

Another object of the present invention is to provide a method for producing a semiconductor single crystal and an apparatus and a semiconductor single crystal ingot manufactured by the method which present an optimum magnetic field change condition for the production of a semiconductor single crystal having a diameter of 8 inches or more.

In the semiconductor single crystal manufacturing method according to an aspect of the present invention for achieving the above technical problem, after soaking the seed crystal in the semiconductor melt accommodated in the quartz crucible to grow the semiconductor single crystal through the solid-liquid interface by gradually pulling the seed crystal upward In the method for manufacturing a semiconductor single crystal using the Czochralski method, oxygen is introduced into a semiconductor single crystal by applying a magnetic field to a quartz crucible during semiconductor single crystal growth, while changing the magnetic field strength while maintaining a convective form at each point inside the quartz crucible. It is characterized by controlling the concentration or the quality of defects.

Preferably, the convection shape can be maintained by fixing a magnetic field ratio at each point inside the quartz crucible.

In the fabrication of semiconductor single crystals having a body length of 1500 mm and an diameter of 8 inches, for example, when high oxygen concentrations up to body length 700 mm and low oxygen concentrations after 700 mm are required to be implemented, from the start of body growth It is desirable to gradually reduce the magnetic field strength up to 700 mm, and then gradually increase the magnetic field strength up to 1500 mm. In this case, the intensity of the magnetic field can be adjusted according to the required oxygen concentration level, and can be achieved by applying a weak magnetic field at high oxygen concentration and a strong magnetic field at low oxygen concentration.

According to the present invention, a Cusp type magnetic field having the same or different magnetic field strengths of the upper and lower sides may be applied to a quartz crucible based on a zero Gauge Plane (ZGP) having a vertical component of zero.

Alternatively, a quartz type crucible may be applied to a horizontal magnetic field in which the direction of the magnetic field in the vicinity of the Gauss Maximum Plane (GMP), which has the greatest magnetic field, is horizontal.

According to another aspect of the invention, a quartz crucible containing a semiconductor melt; A crucible support coupled to the outer circumferential surface of the quartz crucible to support the shape of the quartz crucible in a high temperature environment; Heating means installed to surround sidewalls of the crucible support to provide radiant heat to a semiconductor melt contained in a quartz crucible; Heat insulation means installed to surround the heating means to prevent the radiant heat emitted from the heating means from being lost to the outside; Single crystal ingot pulling means for pulling up a single crystal grown from the seed crystal to the top while rotating the seed crystal contained in the semiconductor melt in a predetermined direction; Quartz crucible rotating means for gradually elevating the crucible support while maintaining the position of the solid-liquid interface at a constant level while rotating the crucible support in a constant direction; And a magnetic field applying means having a coil assembly for applying a magnetic field to the quartz crucible and a magnetic field controller for controlling the coil assembly to change the magnetic field strength according to the required oxygen concentration level while fixing the magnetic field ratio at each point in the quartz crucible. There is provided a semiconductor single crystal manufacturing apparatus comprising a.

According to still another aspect of the present invention, in a semiconductor single crystal ingot in which a single crystal is grown by a Czochralski method in which a seed crystal is immersed in a semiconductor melt contained in a quartz crucible and gradually pulled upward while rotating the seed crystal, the semiconductor single crystal is grown during growth. The magnetic field is applied to the quartz crucible, and the magnetic field strength is increased or decreased from a specific point of the semiconductor single crystal to the predetermined growth length according to the required oxygen concentration level while maintaining the convection form along the longitudinal direction of the single crystal ingot. A semiconductor single crystal ingot is provided which has an oxygen concentration profile or a defect-free quality characteristic corresponding to a magnetic field control that increases or decreases the magnetic field strength until crystal growth is completed to achieve different levels of oxygen concentration after reaching. do.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. Prior to this, terms or words used in the specification and claims should not be construed as having a conventional or dictionary meaning, and the inventors should properly explain the concept of terms in order to best explain their own invention. Based on the principle that can be defined, it should be interpreted as meaning and concept corresponding to the technical idea of the present invention. Therefore, the embodiments described in the specification and the drawings shown in the drawings are only the most preferred embodiments of the present invention and do not represent all of the technical idea of the present invention, various equivalents that may be substituted for them at the time of the present application It should be understood that there may be water and variations.

On the other hand, the embodiment of the present invention described below describes the growth of silicon single crystal using the Czochralski method as an example, but the technical idea of the present invention should not be construed as being limited to silicon single crystal growth. Therefore, the technical idea according to the present invention is the single crystal growth of all the small elements such as Si, Ge, GaAs, InP, LN (LiNbO ₃ ), LT (LiTaO ₃ ), YAG (yttrium aluminum garnet), LBO (LiB ₃ O ₅ ) And CLBO (CsLiB ₆ O ₁₀ ), which can be applied to the growth of all compound semiconductor single crystals.

3 is a block diagram of a semiconductor single crystal manufacturing apparatus according to a preferred embodiment of the present invention.

Referring to FIG. 3, a semiconductor single crystal manufacturing apparatus according to a preferred embodiment of the present invention includes a quartz crucible 10 in which silicon melt (SM) in which polycrystalline silicon and a dopant are melted at a high temperature is accommodated; A crucible support 20 surrounding the outer circumferential surface of the quartz crucible 10 and supporting the quartz crucible 10 in a predetermined form in a high temperature environment; Quartz crucible rotating means 30 which is installed at the bottom of the crucible support 20 and gradually raises the quartz crucible 10 in order to maintain the height of the solid-liquid interface while rotating the quartz crucible 10 together with the branch support 20. ); Heating means 40 for heating the quartz crucible 10 spaced a predetermined distance from the side wall of the crucible support 20; Heat insulation means (50) installed on the outside of the heating means (40) to prevent heat generated from the heating means (40) from flowing out; Single crystal pulling means (60) for pulling the single crystal (C) from the silicon melt (SM) accommodated in the quartz crucible (10) by using a seed crystal rotating in a constant direction; Heat shield means (70) for reflecting heat emitted from the single crystal (C) spaced a predetermined distance from the outer circumferential surface of the single crystal (C) pulled by the single crystal pulling means (60); And inert gas supply means (not shown) for supplying an inert gas (eg, Ar gas) to the upper surface of the silicon melt SM along the outer circumferential surface of the single crystal C. Since these components are typical components of the semiconductor single crystal manufacturing apparatus using the Czochralski method well known in the art, detailed description of each component will be omitted.

In addition to the above-described components, the semiconductor single crystal manufacturing apparatus according to the preferred embodiment of the present invention is electrically connected to the coil assembly (M) and the coil assembly (M) which can form a magnetic field in the quartz crucible (10) The apparatus further includes magnetic field applying means having a magnetic field controller (not shown) for controlling the strength of the magnetic field.

Preferably, the magnetic field applying means applies an asymmetric magnetic field (G _upper , G _lower : hereafter referred to as G) to the high temperature silicon melt SM accommodated in the quartz crucible 10.

Asymmetric magnetic field (G) is ZGP vertical component of the magnetic field is zero: I (Zero Gauss Plane 90) the reference to the upper portion of the magnetic field (G _upper) than the magnetic field strength of the bottom _(lower G) intensity is greater magnetic field. That is, R = G _lower / G _upper is a magnetic field greater than one. Under these asymmetric magnetic field conditions, the ZGP 90 has a parabolic shape that is convex toward the top.

Alternatively, the asymmetric magnetic field G may be a magnetic field in which the _upper magnetic field G _upper intensity is greater than the _lower magnetic field G _lower intensity. That is, the asymmetric magnetic field G may be a magnetic field in which R = G _lower / G _upper is less than one. In this asymmetric magnetic field condition, although not shown in the figures, the ZGP 90 has a parabolic shape that is convex toward the bottom.

Preferably, the magnetic field applying means applies a cusp type asymmetric magnetic field G to the quartz crucible 10. In this case, the coil assembly (M) of the magnetic field applying means is installed spaced apart from the outer circumferential surface of the heat insulating means 50, but consists of an annular upper coil (M1) and a lower coil (M2) coaxial with the quartz crucible (10). do. Here, the upper coil M1 and the lower coil M2 may be general electromagnet coils or superconducting coils.

In order to form the asymmetric magnetic field G, the number of turns of the upper coil M1 and the lower coil M2, the magnitude of the current applied to each coil, the diameter of each coil, or an optional combination thereof can be appropriately adjusted.

For example, the number of windings and the diameter of the upper coil M1 and the lower coil M2 are equal to each other, and currents having different magnitudes are applied to the upper coil M1 and the lower coil M2. That is, a larger current is applied to the lower coil M2 than the upper coil M1 or vice versa. Alternatively, the size of the current applied to the upper coil M1 and the lower coil M2 and the diameter of the coil may be the same, and the number of turns of each coil may be adjusted to form an asymmetric magnetic field G. As another alternative, the asymmetric magnetic field G may be formed by simultaneously adjusting the current applied to the coil and the number of turns of the coil while keeping the diameter of the coil the same. As another alternative, the asymmetric magnetic field G may be formed by equalizing the current applied to the coil and the number of turns, and changing the diameters of the upper coil M1 and the lower coil M2.

As another alternative, the auxiliary magnet 100 may be installed around the rotary mount 35 above the quartz crucible rotating means 30 to form an asymmetric magnetic field. In this case, the asymmetric magnetic field G is formed by the magnetic field generated by the auxiliary magnet 100 even though the magnetic fields generated through the upper coil M1 and the lower coil M2 have the same magnitude. Of course, if the upper coil M1 and the lower coil M2 can form the asymmetric magnetic field G, the asymmetric magnetic field G may be strengthened or weakened by the use of the auxiliary magnet 100. The auxiliary magnet 100 may be a permanent magnet or may be an electromagnet. The position at which the auxiliary magnet 100 is mounted is not limited to the periphery of the rotary mount 35. Therefore, the circumference of the quartz crucible 10, the circumference of the crucible support 20 may be installed at various positions.

In forming the asymmetric magnetic field G in various ways as described above, the distribution of the asymmetric magnetic field G may be moved upward or downward by adjusting the position of the coil assembly M. FIG. When the distribution of the asymmetric magnetic field G is shifted, the ZGP 90 is also moved. Of course, since the quartz crucible 10 gradually rises upward in order to maintain a constant height of the solid-liquid interface during the growth of the single crystal C, an asymmetric magnetic field applied to the silicon melt SM even by the movement of the quartz crucible 10. (G) The relative position of the distribution may change.

Although not shown in the drawings, the coil assembly M may be configured by further installing at least one intermediate coil between the upper coil M1 and the lower coil M2.

In the above, examples of applying the asymmetric magnetic field G to the high-temperature silicon melt SM accommodated in the quartz crucible 10 by the magnetic field applying means have been described. However, the present invention is not limited to this example and is based on the ZGP 90. It may also be configured to apply a symmetric magnetic field.

In addition, the shape of the magnetic field is not limited to the cusp type, and of course, a horizontal type by a superconducting horizontal magnet may be provided. The horizontal type magnetic field refers to a magnetic field in which the direction of the magnetic field near the GMP (Gauss Maximum Plane) having the greatest magnetic field is almost horizontal and the upper and lower magnetic fields have a Gaussian distribution based on the GMP.

The magnetic field control unit of the magnetic field applying unit controls the current flowing through the coil assembly M to change the magnetic field strength for each growth length of the single crystal C while fixing the magnetic field ratio at each point in the quartz crucible 10. As such, when the magnetic field ratio of each point inside the quartz crucible 10 is fixed, it is possible to maintain a convection form at each point inside the quartz crucible 10. In the present invention, the process of maintaining the convection form at each point inside the quartz crucible 10 is not limited to fixing the magnetic field ratio.

Preferably, the magnetic field control unit controls the oxygen concentration flowing from the quartz crucible 10 to the single crystal C by varying the magnetic field strength for each desired growth length and interval to realize a desired oxygen concentration level from a specific point when the single crystal (C) is grown. To control.

The present invention controls the oxygen concentration flowing into the silicon single crystal by controlling the strength of the magnetic field in the process of growing the silicon single crystal (C) through the solid-liquid interface using the single crystal manufacturing apparatus as described above.

4 is a convection formed in the silicon melt when the strength of the magnetic field is gradually increased while the ratio of the magnetic field is fixed to R = 1.63 when growing the 8-inch silicon single crystal using the semiconductor single crystal manufacturing apparatus according to a preferred embodiment of the present invention The distribution is shown by simulation using a commercial program. In the figure, the intensity of the magnetic field is divided into the weak magnetic field (a), the middle magnetic field (b), and the strong magnetic field (c) according to the relative scale.

Referring to FIG. 4, in the convection distribution formed in the silicon melt SM, as the intensity of the magnetic field gradually increases, only the flow rate is reduced without changing the convection cell, so that only the oxygen concentration is changed without changing the quality of the single crystal C. You can see that it can be controlled. That is, it can be seen that the convection speed of the silicon melt is reduced at both the curved point A of the lower end portion of the quartz crucible sidewall and the bottom point B of the quartz crucible, thereby controlling the oxygen concentration.

Experimental Example

FIG. 5 shows the result of controlling the oxygen concentration by applying a variable magnetic field for each single crystal growth length while fixing the magnetic field ratio at each point in manufacturing an 8-inch silicon single crystal ingot having a total body length of 1500 mm and a diameter of 8 inches.

First, as shown in the comparative example, when the intensity of the magnetic field is fixed as it is initially applied and the unchanged value is 100%, the oxygen concentration level is determined at the beginning of the body due to the amount of remaining melt and the shape of the convective cell depending on the single crystal length. It can be seen that the trend tends to decrease gradually and then increase toward the second half.

On the other hand, as the body length increases, the oxygen concentration decreases from 11.5 ppma to 9.8 ppm, as the body length increases, as in Example 1 of the present invention. As the body length increases, when the intensity of the magnetic field is reduced to 50% (ramping down), the oxygen concentration increases to 12.5 ppma.

On the other hand, as shown in Figure 6 as a result of measuring the DSOD of the defect quality level for the single crystal grown in accordance with Example 1 and Example 2 of the present invention it can be confirmed that the integrity characteristics of 20ea or less is maintained throughout the prime area there was. This result shows that if the ratio of the magnetic field is fixed and only the intensity is changed, the shape of the convection cell in the length direction of the single crystal is maintained so that the defect quality can be maintained and the required oxygen concentration can be controlled.

As described above, although the present invention has been described by way of limited embodiments and drawings, the present invention is not limited thereto, and the technical spirit of the present invention and the following will be understood by those skilled in the art to which the present invention pertains. Various modifications and variations are possible, of course, within the scope of equivalents of the claims to be described.

According to the present invention, by fixing the magnetic field ratio for each point of the silicon melt and changing only the magnetic field strength, it is possible to maintain the shape of the convection cell in the single crystal length direction to provide a defect free quality, thereby maximizing prime yield.

In addition, it is possible to control the oxygen concentration for a specific length or position as well as to control the overall oxygen concentration level of the single crystal ingot, thereby producing a wafer having various oxygen concentration conditions from one single crystal ingot.

According to another aspect of the present invention, it is possible to diversify the single crystal product since no measures such as replacement of hot zones or change of process parameters, which have been conventionally applied for various levels of oxygen concentration control, are unnecessary.

Claims (12)

In the method of manufacturing a semiconductor single crystal using the Czochralski method of soaking a seed crystal in a semiconductor melt contained in a quartz crucible and slowly pulling upwards while rotating the seed crystal to grow a semiconductor single crystal through a solid-liquid interface, When the semiconductor single crystal grows, the magnetic field is applied to the quartz crucible, and the magnetic field ratio at each point inside the quartz crucible is fixed to maintain the convective form of the semiconductor melt. A method for manufacturing a semiconductor single crystal, characterized in that the quality is controlled. delete The method of claim 1, A method of fabricating a semiconductor single crystal, characterized in that a Cusp type magnetic field is applied to a quartz crucible having the same or different magnetic field strengths at the top and the bottom, based on a zero Gauge Plane (ZGP) whose vertical component is zero. The method of claim 3, Wherein said magnetic field is provided by an upper coil and a lower coil annularly installed around a quartz crucible. The method of claim 3, And wherein the magnetic field is provided by an upper coil, a lower coil, and at least one intermediate coil interposed between the upper coil and the lower coil annularly installed around the quartz crucible. The method of claim 1, A method of manufacturing a semiconductor single crystal, characterized by applying a horizontal type magnetic field having a horizontal magnetic field direction near a GMP (Gauss Maximum Plane) having a maximum magnetic field strength to a quartz crucible. A quartz crucible containing a semiconductor melt; A crucible support coupled to the outer circumferential surface of the quartz crucible to support the shape of the quartz crucible in a high temperature environment; Heating means installed to surround sidewalls of the crucible support to provide radiant heat to a semiconductor melt contained in a quartz crucible; Heat insulation means installed to surround the heating means to prevent the radiant heat emitted from the heating means from being lost to the outside; Single crystal ingot pulling means for pulling up a single crystal grown from the seed crystal to the top while rotating the seed crystal contained in the semiconductor melt in a predetermined direction; Quartz crucible rotating means for gradually elevating the crucible support while maintaining the position of the solid-liquid interface at a constant level while rotating the crucible support in a constant direction; And And a magnetic field applying means including a coil assembly for applying a magnetic field to the quartz crucible and a magnetic field controller for controlling the coil assembly to change the magnetic field strength while fixing the magnetic field ratio at each point inside the quartz crucible. The method of claim 7, wherein The magnetic field applying means is a semiconductor single crystal manufacturing apparatus, characterized in that for applying a Cusp-type asymmetric magnetic field of the upper and lower magnetic field strength, based on the ZGP vertical component of zero magnetic field. The method of claim 8, The coil assembly of the magnetic field applying means comprises a top coil and a bottom coil annularly installed around a quartz crucible. The method of claim 8, And the magnetic field is provided by an upper coil, a lower coil, and at least one intermediate coil interposed between the upper coil and the lower coil annularly installed around the quartz crucible. The method of claim 7, wherein A semiconductor single crystal manufacturing apparatus characterized by applying a horizontal type magnetic field having a horizontal magnetic field direction near a GMP (Gauss Maximum Plane) having a maximum magnetic field strength to a quartz crucible. In a semiconductor single crystal ingot manufactured by a Czochralski method in which a seed crystal is immersed in a semiconductor melt contained in a quartz crucible, and then the seed crystal is slowly pulled upward while rotating. A semiconductor single crystal characterized in that it has an oxygen concentration profile or a defect-free quality characteristic corresponding to a magnetic field control that changes the magnetic field strength while maintaining the convective form of the semiconductor by fixing the magnetic field ratio at each point inside the quartz crucible during semiconductor single crystal growth. Ingot.

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