KR100849887B1 - The struction of white led chip - Google Patents

Abstract

A white LED chip using a blue chip and a phosphor is provided to reduce a manufacturing cost and an investment necessary for a manufacturing process by eliminating a process for manufacturing a white LED. An LED chip includes a double hetero structure including a pair of anode pad(111) and cathode lead frame(112), a magnesium doped GaN-based p type clad layer(113) formed at a lower side of the anode pad, and an InGaN-based active layer(114). A Si doped GaN-based n type clad layer(119) is formed at a lower end of the active layer and a lower side of the cathode lead frame. A GaN-based buffer layer(115) is formed at a lower end of the Si doped GaN-based n type clad layer. An Al2O3 substrate(116) is formed at a lower end of the GaN-based buffer layer. A phosphor layer(117) is formed at a lower end of the substrate. A reflective layer(118) is formed at a lower end of the phosphor layer.

Description

White light emitting diode chip using blue chip and phosphor

1 is a cross-sectional view illustrating a conventional blue light emitting diode chip having an InGaN / Al ₂ O ₃ structure.

2 is a cross-sectional view of a white light emitting diode device using a blue diode chip and a phosphor having a conventional InGaN / Al ₂ O ₃ structure,

3 is a cross-sectional view of a representative white light emitting diode chip according to the present invention;

4 is a cross-sectional view of a white light emitting diode chip according to another embodiment of the present invention;

5 is a cross-sectional view of a white light emitting diode according to another embodiment of the present invention.

-Explanation of the codes for the main parts of the drawings-

1: Blue chip with InGaN / Al ₂ O ₃ structure

111: anode electrode of a blue light emitting diode chip

112: cathode of a blue light emitting diode chip

113: p-type cladding layer

114: active layer of a blue light emitting diode chip

115: Buffer layer of the blue light emitting diode chip

116: substrate of the blue light emitting diode chip

117: phosphor layer of a blue light emitting diode chip

118: Al reflection layer of the blue light emitting diode
119 n-type cladding layer

211: adhesive

3: cathode lead of light emitting diode element

31: cathode chip pad of light emitting diode device

4: cathode lead of light emitting diode element

41: cathode chip pad of light emitting diode device

5: gold wire

61: injection reflector

8: phosphor epoxy / silicone resin

10: light emitting photon

The present invention relates to a white light emitting diode chip that realizes high brightness by forming a phosphor layer on a chip of a blue light emitting diode, and more particularly, to a lower portion of a substrate layer of Al ₂ O ₃ in a blue light emitting diode chip. The present invention relates to a blue chip for forming a phosphor layer and an Al reflection layer on the substrate to obtain white light, and a white light emitting diode chip using the phosphor.

In general, the light emitting diode receives an electric signal and converts it into an optical signal. When the electric signal is applied, the light emitting diode chip emits light, depending on the type of chip, blue, red, and yellow. Glow in (Green).

Meanwhile, conventionally, a white light emitting diode was implemented by coating a phosphor on a blue chip. At this time, the blue chip is attached to the die pad 31 using the adhesive 211, the electrode is formed using the gold wire, and phosphors and epoxy or phosphors are formed inside the injection reflector 61 of the upper layer of the blue chip. The white light emitting diode device was made by filling the phosphor mixed with silicon, but this lowered the quantum efficiency of the light emitting diode and it is difficult to realize a pure white light emitting diode. In addition, the manufacturing cost increases due to the addition of a process of applying the phosphor to the epoxy resin in the light emitting diode injection reflector.

In addition, it is sensitive to changes in the amount, time, and viscosity of filling the injection reflector, and thus, different colors of light emitting diodes are produced at each operation, which lowers the yield of the process, which in turn raises the cost and thickness of the light emitting diode elements. do.

The present invention has been made to solve the above problems, to provide a high-efficiency white LED chip that significantly reduces the process while maximizing the efficiency of blue (photon) photons.

Another object of the present invention can provide a light emitting diode device that can reduce the thickness of the white light emitting diode device by eliminating a separate fluorescent epoxy resin for making a blue photon to white light.

In the present invention for achieving the above object, it is the same as the manufacturing process of a general blue light emitting diode chip, but it is characterized in that the phosphor layer and the Al reflection layer is added. The light emitting diode chip includes a pair of anode pads and a cathode lead frame, a GaN p-type cladding layer doped with Mg under the anode electrode, and an InGaN active layer. (Active Layer) has a double hetero structure. Si-doped n-type cladding layer at the bottom of the active layer and the cathode electrode, GaN-based buffer layer at the bottom of the cladding layer, and Al ₂ O ₃ (sapphire) at the bottom of the buffer layer. The substrate is composed of a substrate, a fluorescent layer coated with a phosphor at the lower end of the substrate, and a reflective layer in which the fluorescent layer is deposited with Al at the lower end. As a result, the electrons (-) and holes (+) are moved, and blue photons in the 420 nm to 470 nm bands emit white light through the fluorescent layer. This white light emits high brightness white light through the Al reflecting layer to the front portion. Accordingly, the present invention provides a white light emitting diode chip that compensates for disadvantages such as high cost, low efficiency, and expensive facility investment of the white light emitting diode manufacturing method, which is manufactured by inserting a conventional phosphor into a separate process.

At this time, the blue chip 1 emits 420 nm to 470 nm emission spectral peak wavelengths, and the blue photons and the phosphors of the fluorescent layer convert to 520 nm to 620 nm wavelengths.

Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.

3 is a cross-sectional view of a main part of a light emitting diode chip according to the present invention, in which an anode pad 111 and a cathode lead frame 112 and magnesium (Mg) are doped under the anode electrode 111. (Doped) The GaN-based p-type cladding layer 113 and the InGaN-based active layer 114 have a double hetero structure. At the bottom of the active layer and at the bottom of the cathode electrode 112, an n-type cladding layer 119 doped with Si, a GaN-based buffer layer 115 at the bottom of the cladding layer, A substrate 116 of Al ₂ O ₃ (sapphire) at the bottom of the buffer layer 115, a phosphor layer 117 coated with a phosphor at the bottom of the substrate 116, and Al at the bottom of the phosphor layer. It consists of the reflective layer 118 deposited.

4 is a cross-sectional view illustrating main parts of a light emitting diode chip according to the present invention. ) And an InGaN-based active layer 114 have a double hetero structure.

The n-type cladding layer 119 doped with Si is formed at the bottom of the active layer and the cathode electrode 112, and the GaN-based buffer layer 115 is formed at the bottom of the cladding layer. ) And a fluorescent layer 117 coated with a phosphor by extending the substrate 116 of Al ₂ O ₃ (sapphire), the lower end of the substrate 116, and the side surface of the light emitting diode chip under the buffer layer 115. ), And a reflective layer 118 formed by evaporation of Al, which extends to the lower end of the fluorescent layer and the side part of the light emitting diode chip.

5 is a cross-sectional view of a main part of a light emitting diode chip according to the present invention, and a GaN p-type clad with Mg doped under the anode electrode 111 and the cathode electrode 112 and the anode electrode 111. The layer 113 and the InGaN-based active layer 114 have a double hetero structure.

The n-type cladding layer 119 doped with Si at the bottom of the active layer and the cathode electrode 112, the GaN-based buffer layer 115 at the bottom of the cladding layer, and the buffer layer ( 115) A fluorescent layer 117 coated with a phosphor extending from the bottom of the substrate 116 of Al ₂ O ₃ (sapphire), the bottom of the substrate 116, the side of the light emitting diode chip and the top of the light emitting diode chip. ), And a reflective layer 118 formed by evaporating Al to extend to the lower end of the fluorescent layer and the side part of the light emitting diode chip.

According to the present invention having such a configuration, first, when the electrons (-) and the holes (+) are moved, blue photons in the 420 nm to 470 nm bands emit white light through the fluorescent layer.

This white light emits high brightness white light through the Al reflecting layer 118 to the front surface. Accordingly, the present invention provides a white light emitting diode chip that compensates for disadvantages such as high cost, low efficiency, and expensive facility investment of the white light emitting diode manufacturing method, which is manufactured by inserting a conventional phosphor into a separate process.

The present invention described above is not limited to the above-described embodiments and drawings, and various substitutions, modifications, and alterations within the scope not departing from the technical spirit of the present invention are possible in the art to which the present invention pertains. It will be clear to those who have it.

As described above, the white light emitting diode chip according to the present invention can delete a process for making a general white light emitting diode device by emitting white light by itself, thereby reducing manufacturing cost and reducing process investment cost. Another feature is that a chip that emits white light and implements white light in the chip, so that high luminance can be realized to make the blue photon efficiency as white photons as much as possible.

Accordingly, the present invention converts the blue photons into white photons by inserting the phosphor layer into the lower end, the upper end, and the side of the light emitting diode chip. Therefore, the luminous efficiency can be maximized and high reliability white light can be realized.

Claims (4)

A pair of anode pads 111 and cathode lead frames 112, and a GaN-based p-type cladding layer doped with Mg under the anode electrode 111; 113 and an InGaN-based active layer 114 have a double hetero structure, and Si is doped under the active layer 114 and below the cathode electrode 112. Doped) GaN-based n-type cladding layer 119, GaN-based buffer layer 115 at the bottom of the n-type clad 119 layer, and Al at the buffer layer 115 bottom Substrate 116 of ₂ O ₃ (sapphire), a fluorescent layer 117 coated with a phosphor at the lower end of the substrate 116, and a reflective layer deposited with Al at the lower end of the fluorescent layer 117 ( 118) comprising a blue chip and a white light emitting diode chip using a phosphor. The method of claim 1, In the white light emitting diode chip, a blue photon emits 420 nm to 470 nm emission spectrum peak wavelength, and the blue photon and the phosphor of the fluorescent layer convert the blue chip to a wavelength of 520 nm to 620 nm. White light emitting diode chip using a phosphor. The method of claim 1, The fluorescent layer is applied by extending to the lower end of the substrate 116 and the side of the light emitting diode chip, A blue chip and a white light emitting diode chip using a phosphor, characterized in that it comprises a reflecting layer deposited on the lower end of the fluorescent layer and the side portion of the light emitting diode chip deposited by Al. The method of claim 1, The fluorescent layer extends to the lower end of the substrate 116 and the side surface of the light emitting diode chip and to the side surfaces except for the anode electrode 111 and the cathode electrode 112 to form a phosphor. A blue chip and a white light emitting diode chip using a phosphor, characterized in that it comprises a reflective layer deposited with Al extending to the lower end of the fluorescent layer and the side portion of the light emitting diode chip.

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