KR100839147B1 - Method and system for removing photoresist film - Google Patents

Abstract

Disclosed are a method of removing a photoresist film and a system therefor. The light reflectance having an inverse relationship with the photoresist residue formed on the upper surface of the thin film is measured, and the light reflectance is used to calculate the residual amount of the photoresist residue. The process environment for removing the photoresist residue formed on the upper surface of the subsequent thin film according to the calculated residual amount of the photoresist residue is changed so that the photoresist residue remaining on the upper surface of the thin film is present in a numerical value within an acceptable range. This greatly increases the thin film adhesion between the thin film and the thin film to prevent the thin film from being peeled off arbitrarily.

Thin film, adhesion

Description

METHOD AND SYSTEM FOR REMOVING PHOTORESIST FILM}

1 is a perspective view illustrating performing a thin film adhesion test in a conventional scratch method.

2 is a flowchart illustrating a method of removing a photoresist film according to an embodiment of the present invention.

3 is a graph showing the relationship between the photoresist remaining amount and the first light reflectance by the photoresist removal method according to an embodiment of the present invention.

4 is a graph showing the relationship between the thin film adhesion strength and the photoresist residual amount according to an embodiment of the present invention.

5 is a block diagram of a photoresist removal system according to an embodiment of the present invention.

6 is a conceptual diagram illustrating the photoresist removal system according to an embodiment of the present invention in more detail.

7 is a conceptual diagram illustrating a liquid crystal display device to which the present invention is applied.

8 is a block diagram illustrating a photoresist removal system according to another embodiment of the present invention.

9 is a conceptual diagram illustrating in more detail a photosensitive film removal system according to another embodiment of the present invention.

The present invention relates to a method for removing a photoresist film and a photoresist removal system for the same. In particular, the residual amount of the photoresist film remaining on the upper surface of the thin film to reduce adhesion between the thin films is measured in a non-destructive manner and the residual amount of the photoresist film measured in a non-destructive manner is a feedback control method. The present invention relates to a method of removing a photoresist film which is reduced by reducing the adhesion between thin films and a photoresist removal system therefor.

Recently, with the development of semiconductor manufacturing technology, products using semiconductor devices and semiconductor devices such as thin film transistors (TFTs), which store more data per unit area and process more data per unit time, have been introduced. It was developed.

In order to manufacture such a semiconductor device, very precise thin film processing processes are required. These thin film processing processes include a "deposition process" for forming a specific thin film on a substrate, a "photoresist coating process" for applying a photoresist film to the deposited thin film, a "photo process" for patterning a photoresist film in a desired form, and a patterned photoresist film. It consists of "etch processes" that pattern a thin film located below the photoresist as a protective film.

In addition to such thin film processing processes, there is a "ashing process" that removes the photosensitive film located on the upper surface of the thin film after the thin film is patterned. This ashing process removes the photoresist film by, for example, making oxygen or ozone into a plasma state or by injecting ultraviolet rays into oxygen to excite oxygen with oxygen molecules.

The ashing process to perform this action is very important. This is because in the ashing process, when another thin film is formed on the upper surface of the pre-formed thin film while the remaining amount of the photosensitive film formed on the upper surface of the thin film exceeds the allowable range, the adhesion force of the preceding thin film and the subsequent thin film is weakened by the photosensitive film residue, and even the thin film This is because liver detachment may occur.

 The reason why the photoresist residue which causes such a fatal process failure is not sufficiently removed from the upper surface of the thin film has various reasons, such as a process environment setting error and a photoresist formation failure in a previous process.

For this reason, after the ashing process is performed and the subsequent thin film is formed, the adhesion test of the preceding thin film and the subsequent thin film is performed by the sampling method. This adhesion test is widely used in the scratch method as shown in FIG.

The scratch method is obtained by measuring the extent to which the preceding thin film 1 is separated from the subsequent thin film 3 by scraping the preceding thin film 1 in the transverse direction while pressing the test pin 2 in the vertical direction to the subsequent thin film 3. The adhesion between the thin films is measured.

However, such a scratch test method has a problem in that it cannot be sold or used due to a fatal defect generated during a test on a product that has already been processed by a fracture test.

Another test method is an adhesive tape method that tests the adhesion between the preceding thin film and the subsequent thin film by attaching an adhesive tape having excellent adhesion to the subsequent thin film and then peeling off the adhesive tape. However, this method also has a problem in that the breakdown test in which the preceding thin film and the subsequent thin film are separated and the product can no longer be sold or used.

In addition, if the test result that the thin film adhesion does not meet the allowance, there is a fatal problem that must be inspected all the products or discarded all the products produced for a certain period of time unreliable.

Accordingly, the present invention has been made in view of such a conventional problem, and a first object of the present invention is to measure the photoresist residue remaining on the upper surface of the thin film in a non-destructive manner as well as to feedback control the amount of photoresist remaining between the thin film and the thin film. The present invention provides a method for removing a photoresist film to minimize the remaining amount of the photoresist film.

In addition, the second object of the present invention is to provide a photoresist removal system in which the photoresist residue remaining on the upper surface of the thin film is measured in a non-destructive manner as well as the feedback control of the photoresist residue remaining between the thin film and the thin film is minimized. Is in.

The photosensitive film removing method for realizing the first object of the present invention is a method for removing the photosensitive film existing on the upper surface of the thin film formed on the substrate by feedback control, wherein the nth photosensitive film (n is a natural number) is formed on the upper surface of the thin film. Preparing an nth substrate (n is a natural number), removing the nth photosensitive film remaining in the thin film of the nth substrate by an nth photosensitive film removing process environment, and having an inverse relationship with the remaining amount of the nth photosensitive film Measuring a first light reflectance, calculating a residual amount of the nth photosensitive film based on the light reflectance, calculating an n + 1 photosensitive film removing process environment such that the calculated residual amount of the nth photosensitive film is included in an allowable residual amount, a thin film Preparing an n + 1th substrate (n is a natural number) on which an n + 1 photosensitive film (n is a natural number) is formed on an upper surface of the substrate; And a step of removing. The n th and n + 1 photoresist layers may be formed of a photosensitive organic material.

In addition, the photosensitive film removing system for implementing the second object of the present invention is a system for removing the photosensitive film remaining in the thin film formed on the substrate by feedback control, the photosensitive film removing apparatus for removing the photosensitive film by reacting the active gas to the photosensitive film, A light reflectance measuring device for measuring a first light reflectance in the thin film to measure a residual amount of the remaining photoresist film after being removed by the removal device, a photoresist residual amount calculating device for calculating the remaining amount of the photoresist film remaining on the thin film by the first light reflectance; And a process condition adjusting module for changing the process conditions of the active gas in accordance with the photoresist residual amount calculating device and a photosensitive film removing device, a light reflectance measuring device, a photoresist film remaining amount calculating device, and a process condition adjusting module. .

Hereinafter, with reference to the accompanying drawings a more specific configuration, a specific operation and effects of the photosensitive film removal method and a photosensitive film removal system using the same according to a preferred embodiment of the present invention will be described.

2 is a view illustrating a photosensitive film removing method according to a preferred embodiment of the present invention. In the present invention, it will be described as an embodiment to remove the photosensitive film formed on the upper surface of the black matrix formed on the color filter substrate, which is a component of the liquid crystal display device.                     

First, a black matrix thin film formed of a chromium material is formed on a transparent substrate, and an n th color filter substrate (where n is a natural number) is formed on an upper surface of the black matrix thin film, where n is a natural number. Step is preceded (step S1). The M-th photosensitive film may be formed of a photosensitive organic material.

In this case, the step S1 may further include a step of forming a color filter between the black matrix and the n-th photosensitive film.

Subsequently, the nth photosensitive film formed on the nth color filter substrate is removed in an embodiment by the nth photosensitive film removing process environment (step S2). More specifically, step S2 is an ultraviolet ashing process in which oxygen or ozone is excited with oxygen molecules by ultraviolet rays having a wavelength length of 185 nm or 254 nm to remove the photosensitive film.

At this time, in step S2, the temperature, the intensity of ultraviolet rays, the concentration of oxygen, and the processing time are process conditions. In one embodiment, the process environment in step S2 is a first process temperature, ultraviolet light having a first intensity, oxygen at a first concentration, and a first time.

After the nth photosensitive film is removed by the nth photosensitive film removing process environment, the step of measuring the first light reflectance of the black matrix thin film of the nth color filter substrate is performed (step S3). In this case, the first light reflectance is measured by scanning the black matrix thin film by scanning light having a wavelength of 620 nm, light having a wavelength of 540 nm, or light having a wavelength of 460 nm on the black matrix thin film at 5 mm intervals.

In this case, the reason for measuring the first light reflectance of the black matrix thin film is to determine how much of the nth photosensitive film remains on the top surface of the black matrix thin film.                     

Specifically, the remaining amount of the nth photosensitive film remaining on the upper surface of the black matrix thin film and the first light reflectance have an inverse relationship as shown in the graph of FIG. 3.

 Referring to the graph of FIG. 3, as the residual amount of the n-th photosensitive film on the black matrix thin film increases, the first light reflectance decreases, and as the residual amount of the n-th photosensitive film decreases, the first light reflectance decreases. For example, when the first light reflectance is A, the nth photosensitive film residual amount has B, but when the first light reflectance is C greater than A, the nth photosensitive film residual amount has D reduced than B.

Therefore, when the first light reflectance is measured, the residual amount of the nth photosensitive film remaining in the black matrix can be accurately calculated using the graph shown in FIG. 3. In this case, the graph shown in FIG. 3 may vary slightly depending on the physical properties of the nth photosensitive film.

On the other hand, if the residual amount of the nth photosensitive film is calculated based on the first light reflectance and the graph shown in FIG. 3, the adhesion strength between the different thin films may be calculated according to the residual amount of the nth photosensitive film. The adhesion strength between the different thin films according to the remaining amount of the nth photosensitive film is in accordance with the graph of FIG. 4.

According to the graph of FIG. 4, the residual amount of the nth photosensitive film and the thin film adhesion strength have an inverse relationship. For example, when the n-th photosensitive film residual amount calculated by the graph of FIG. 3 and the first light reflectance is E, the adhesion strength between different thin films is F. FIG. On the other hand, when the remaining amount of the n-th photosensitive film is G less than E, the adhesion strength between different thin films is significantly increased compared to F.

As a result, by measuring the first light reflectance, the residual amount of the nth photosensitive film may be calculated using the graph of FIG. 3, and the adhesion strength between different thin films may be calculated and predicted by the graph of FIG. 4 according to the residual amount of the nth photosensitive film.

For this reason, after the step of measuring the first light reflectance, the step of calculating the remaining amount of the nth photosensitive film is performed according to the graph of FIG. 3 (step S4).

Then, when the residual amount of the nth photosensitive film is larger than the allowable residual amount, the n + 1th photosensitive film removing process environment formed on the n + 1th color filter substrate to be subjected to the subsequent process is adjusted according to the calculated residual amount of the nth photosensitive film. The n + 1 photosensitive film may be formed of a photosensitive organic material.

More specifically, this means that if the remaining amount of the nth photoresist film is out of the allowable range while the nth photoresist removal process is performed by the process environment of the nth photoresist film removal process, the remaining amount of the n + 1 photoresist film is included within the allowable range. This means that the n + 1 photoresist removal process environment is adjusted.

This is achieved by individually or in combination controlling a number of process conditions that affect the residual amount of the n + 1 photosensitive film.

Specifically, the process conditions affecting the remaining amount of the n + 1 photosensitive film formed on the n + 1th color filter substrate are the process temperature, the irradiation intensity of the ultraviolet ray, the oxygen concentration and the time. All of these process conditions have a relationship in inverse proportion to the residual amount of the n + 1th photosensitive film.

That is, the process temperature is raised from the first temperature to the second temperature, or the first intensity of ultraviolet light having a wavelength length of 185 nm or 254 nm is increased to the second intensity, or the first concentration of oxygen is increased to the second concentration. In this case, the residual amount of the n + 1 photoresist film formed on the black matrix is decreased when increasing the temperature or increasing the first process time to the second process time.                     

For example, when the process temperature is the first temperature when the n-th photosensitive film is removed, the remaining n + 1-th process removing environment except for the temperature conditions is such that the remaining amount of the n + 1 photosensitive film is within the allowable range. The first temperature may be changed to the second temperature such that the remaining amount of the n + 1 photosensitive film is within the allowable range with reference to the first light reflectivity in the same state as when the nth photosensitive film is removed.

In addition, when the nth photosensitive film is removed, when the ultraviolet irradiation intensity is the first intensity, the remaining amount of the n + 1 photosensitive film removing environment is excluded except the ultraviolet irradiation intensity so that the remaining amount of the n + 1 photosensitive film is within the allowable range. The process conditions mean that the first intensity can be changed to the second intensity with reference to the first light reflectivity in the same state as when the nth photosensitive film is removed.

In addition, when removing the n-th photosensitive film, when the oxygen concentration is referred to as the first concentration, in order to ensure that the remaining amount of the n + 1-photosensitive film is within the allowable range, the remaining concentrations other than the oxygen concentration in the n + 1 photosensitive film removing process environments are included. It means that the first concentration can be changed to the second concentration with reference to the first light reflectivity while the process conditions are maintained the same as when the nth photosensitive film is removed.

In addition, when the process time is referred to as the first time when the n-th photosensitive film is removed, the remaining processes other than the process time in the n + 1 photosensitive film removing process environment so that the remaining amount of the n + 1 photosensitive film is included in the allowable range. It means that the first time can be changed to the second time with reference to the first light reflectivity while the conditions are kept the same as when the nth photosensitive film is removed.                     

These process variables are calculated by the first light reflectance. As the new process variables are calculated, a new n + 1 photosensitive film removing process environment to be applied to the n + 1th color filter substrate is calculated (step S5).

Subsequently, before the n + 1 photosensitive film removing process is performed, the nth color filter substrate is unloaded by the calculated n + 1 photosensitive film removing process environment, and the n + 1th color filter having the n + 1 photosensitive film formed thereon. The substrate is loaded at the designated position (step S6).

Subsequently, a process of removing the n + 1th photosensitive film is performed on the n + 1th color filter substrate by the n + 1th photosensitive film removing process environment (step S7).

Hereinafter, a photoresist removal system for implementing a photoresist removal method according to an embodiment of the present invention will be described with reference to FIG. 5 or 6.

Referring to FIG. 5, the photoresist film removal system 700 may further include a control unit 100, a process condition control module 200, a photoresist residual amount calculation device 300, a light reflectance measurement device 400, and a photoresist film removal device ( 500 and process data storage module 600.

The control signal for controlling the process condition control module 200, the photoresist residual amount calculating device 300, the light reflectance measuring device 400, and the photoresist removal device 500, which are components of the photoresist removal system 700, are controlled. It enters and exits by a control bus 110 connected to the unit 100. In addition, data signals of the process condition control module 200, the photoresist film residual amount calculating device 300, the light reflectance measuring device 400, and the photoresist film removing device 500 may be connected to a control bus 100. I get in and out by

Of the photoresist removal system 700 having such a configuration, the photoresist removal apparatus 500 may again include a process chamber 510, an ultraviolet lamp 520, a heating plate 530, and an ashing gas supply device as illustrated in FIG. 6. 540).

The process chamber 510 serves to provide a space in which the ashing process is performed in a clean environment, and a heating plate 530 is installed on an inner bottom surface of the process chamber 510. The heating plate 530 is loaded with a color filter substrate 550 to be processed, a built-in heat generating module (not shown) free to control the temperature.

The ultraviolet lamp 520 is again installed in the process chamber 510 facing the heating plate 530 having such a configuration. At least one of the ultraviolet lamps 520 is provided to generate ultraviolet rays having a wavelength length of 185 nm or 254 nm, and to control the amount of ultraviolet rays generated.

Meanwhile, the ashing gas supply device 540 is installed in association with the process chamber 510. The ashing gas supply device 540 is composed of an ashing gas supply pipe 544 and an ashing gas supply module 542. The ashing gas supply module 542 is installed outside the process chamber 510, and the ashing gas supply pipe 544 is installed inside the process chamber 510. A plurality of injection nozzles 544a are formed in this ashing gas supply pipe 544. At this time, the ashing gas supply module 542 is supplied with oxygen or ozone.

Unexplained reference numeral 522 is an ultraviolet sensor for detecting the amount of ultraviolet light generated by the ultraviolet lamp 520, and reference numeral 532 is a temperature measuring sensor for measuring the temperature of the heating plate 530.

The photoresist removing device 500 having such a configuration is provided with a process condition adjusting module 200 for changing process conditions. The process condition adjusting module 200 adjusts process conditions according to a control signal generated from the control unit 100.

Process condition control module 200 is again composed of a lamp power supply module 210, flow control module 220, process progress time control module 230, process temperature control module 240.

At this time, the lamp power supply module 210 controls the amount of ultraviolet light generated by the ultraviolet lamp 520 by adjusting the intensity of the power applied to the ultraviolet lamp 520 described above. At this time, the amount of ultraviolet light generated by the lamp power supply module 210 is based on the control signal of the control unit 100.

On the other hand, the flow rate control module 220 adjusts the flow rate of oxygen or ozone supplied from the ashing gas supply module 542. At this time, the flow control module 220 is also operated by the control signal of the control unit 100.

On the other hand, the process progress time adjustment module 230 serves to adjust the overall process time that the ashing process proceeds, also operates by the control signal of the control unit 100.

On the other hand, the process temperature control module 240 controls the intensity of the power applied to the heating plate 530 so that the temperature of the heating plate 530 is adjusted so that the color filter substrate 550 seated on the heating plate 530. It is responsible for controlling the temperature.

On the other hand, the process condition adjustment module 200 having such a configuration is operated according to the control signal generated in the control unit 100 as described above. This control signal generated by the control unit 100 is generated based on the data generated by the light reflectance measuring apparatus 400.

This is because, as described above, the residual amount of the photoresist film formed on the black matrix thin film of the color filter substrate 550 is inversely related to the light reflectivity.

The light reflectance measuring apparatus 400 is composed of a light reflectance measuring module 410, a reference substrate 420, and a measurement substrate 430.

In this case, the light reflectance measuring module 410 emits light having a wavelength length of 620 nm, 540 nm, and 460 nm, and detects light reflected from the substrate to calculate light reflectance data.

In this case, the reference substrate 420 is a substrate which is a reference for measuring the light reflectance. The first light reflectance on the black matrix of the color filter substrate is calculated as a percentage from the reference substrate 420.

The data generated by the light reflectivity measuring module 400 having such a configuration is stored in the process data storage module 600, and the control unit 100 accesses and uses the data stored in the process data storage module 600. .

On the other hand, the light reflectance data stored in the process data storage module 600 is calculated by the photoresist residual amount calculating device 300 and calculated by calculating the photoresist residual amount on the actual color filter substrate, and the calculated photoresist residual data is also stored in the process data Stored in module 600.                     

The control unit 100 accesses the photoresist residual amount data stored in the process data storage module 600 to generate each control signal to be applied to the process condition control module 200.

The photoresist control method and the photoresist control apparatus described above may be widely used in a general thin film processing process, and may also be used in a liquid crystal display panel requiring a thin film processing process.

For example, a cross-sectional view of the liquid crystal display panel is illustrated in FIG. 7. Reference numeral 552 denotes a black matrix, and reference numeral 553 denotes a transparent conductive film formed on the upper surface of the black matrix.

At this time, when a lateral shear force is applied from the outside while the photosensitive film remains between the black matrix 552 and the transparent conductive film 553, the black matrix 552 and the transparent conductive film 553 are separated, thereby A fatal defect may occur in which the TFT substrate 554 and the color filter substrate 555 disposed on both sides of the liquid crystal shown by reference numeral 556 may be separated, but such a problem may be solved by the photosensitive film removing method and the photosensitive film removing system according to the present invention. It can be overcome.

Meanwhile, in the present invention described above, as shown in FIG. 5 or 6, the light reflectance of the chromium thin film is measured to measure the residual amount of the photoresist film remaining in the black matrix, and the process environment is feedback-controlled according to the photoresist residual amount. It has been explained.

In recent years, however, black resins having excellent light absorptivity have been used instead of the chromium thin film, and the residual amount of the photoresist remaining on the upper surface of the black resin is difficult to be measured by the light reflectance and the light transmittance should be measured.

At this time, the light transmittance of the black resin has a relationship in inverse proportion to the residue of the photosensitive film formed on the upper surface of the black resin. For example, the more the residue of the photoresist film is on the top surface of the black resin, the lower the light transmittance, and the more the residue of the photosensitive film is on the top surface of the black resin, the higher the light transmittance.

In view of this, by measuring the light transmittance of the black resin, it is possible to accurately measure the residual degree of the photoresist residue formed on the upper surface of the black resin.

On the system side, this embodiment is implemented by installing a light transmittance measuring device 450 including a light transmittance measuring module 460 in the photoresist removal system as shown in FIG. 8 or 9. The remaining components in FIG. 8 or FIG. 9, the process condition adjusting module 200, the photoresist film remaining amount calculating device 300, the photoresist film removing device 500, the process data storage module 600, and the control unit 100 are described above with reference to FIG. 5. Or duplicate description will be omitted because the same as the portion shown in FIG.

Thus, when the chromium thin film is used as the black matrix, the light reflectance measuring device calculates the residual amount of the photoresist film on the upper surface of the chromium thin film, and when the black resin is used as the black matrix, the light transmittance measuring device exists on the upper surface of the chromium thin film. The object of the present invention can be realized by calculating the remaining amount of the photosensitive film.

As described in detail above, in the process of continuously depositing and patterning at least two thin films, it is possible to overcome the lowering of the adhesion between the thin films due to the photoresist residue present between the thin films and the thin films, and to prevent the lowering of the adhesion between the thin films in advance. It has a variety of effects.

In the detailed description of the present invention described above with reference to a preferred embodiment of the present invention, those skilled in the art or those skilled in the art having ordinary knowledge in the scope of the invention described in the claims to be described later It will be understood that various modifications and variations can be made in the present invention without departing from the scope of the present invention.

Claims (20)

In the method for removing the photosensitive film existing on the upper surface of the thin film formed on the substrate by feedback control, Preparing an nth substrate (n is a natural number) on which an nth photosensitive film (n is a natural number) is formed on an upper surface of the thin film; Removing the nth photosensitive film remaining in the thin film of the nth substrate by an nth photosensitive film removing process environment; Measuring a first light reflectivity having a relationship inversely proportional to the residual amount of the nth photosensitive film; Calculating a residual amount of the nth photosensitive film by the light reflectance; Calculating an n + 1 photosensitive film removing process environment such that the calculated residual amount of the nth photosensitive film is included in an allowable residual amount; Preparing an n + 1th substrate (n is a natural number) on which an n + 1 photosensitive film (n is a natural number) is formed on an upper surface of the thin film; And Removing said n + 1 photosensitive film by said n + 1 photosensitive film removing process environment. The method of claim 1, wherein the n-th, n-th photosensitive film comprises a photosensitive organic material. The method of claim 1, wherein the removing of the n-th photosensitive film by the n-th photosensitive film removing process environment Adjusting the temperature of the nth substrate to a first temperature; Irradiating ultraviolet rays having a first intensity to the nth photosensitive film; Supplying oxygen, which is excited by the ultraviolet light, to the nth photosensitive film at a first concentration; And And performing an ashing process on the nth photosensitive film in which oxygen is excited with oxygen molecules by the ultraviolet rays for a first time. The method of claim 3, wherein the removing of the n + 1 photosensitive film by the n + 1 photosensitive film removing process environment comprises adjusting a temperature of the n + 1th substrate to a second temperature corrected from the first temperature. The photosensitive film removal method comprising the step. The method of claim 3, wherein the removing of the n + 1 photosensitive film by the n + 1 photosensitive film removing process environment comprises changing the UV scanning intensity of the n + 1th substrate to a second intensity corrected from the first intensity. And correcting the photoresist film. The method of claim 3, wherein the removing of the n + 1 photoresist film by the n + 1 photoresist removing process environment comprises correcting the oxygen excited from the n + 1 th substrate from the first concentration. The photosensitive film removal method comprising the step of correcting and supplying to the second concentration. The method of claim 3, wherein the removing of the n + 1 photosensitive film by the n + 1 photosensitive film removing process environment comprises performing a second time of correcting oxygen molecules excited on the n + 1th substrate from the first time. During said photoresist removal method. The method of claim 1, wherein the measuring of the first light reflectance is performed at a plurality of locations along the thin film at regular intervals. delete The method of claim 1, further comprising storing the remaining amount of the nth photosensitive film as data after calculating the remaining amount of the nth photosensitive film. The method of claim 1, wherein the thin film is a chromium thin film. In the method for removing the photosensitive film existing on the upper surface of the black resin formed on the substrate by feedback control, Preparing an nth substrate (n is a natural number) on which an nth photosensitive film (n is a natural number) is formed on an upper surface of the black resin; Removing the nth photosensitive film remaining in the black resin of the nth substrate by an nth photosensitive film removing process environment; Measuring a light transmittance having a relationship inversely proportional to the residual amount of the nth photosensitive film; Calculating a residual amount of the nth photosensitive film by the light transmittance; Calculating an n + 1 photosensitive film removing process environment such that the calculated residual amount of the nth photosensitive film is included in an allowable residual amount; Preparing an n + 1th substrate (n is a natural number) on which an n + 1 photosensitive film (n is a natural number) is formed on an upper surface of the black resin; And And removing said n + 1 photosensitive film by said n + 1 photosensitive film removing process environment. In the system for removing the photosensitive film remaining in the thin film formed on the substrate by feedback control, A photoresist removal device for removing the photoresist by reacting an active gas with the photoresist; A light reflectance measuring device for measuring a first light reflectance of the thin film to measure a residual amount of the photosensitive film remaining after being removed by the photoresist removing device; A photoresist residual amount calculating device for calculating a residual amount of the photoresist film remaining in the thin film by the first light reflectance; A process condition adjusting module for changing a process condition of the active gas according to the photoresist film remaining amount calculated by the photoresist film remaining amount calculating device; And And a control unit for controlling said photoresist film removing device, said light reflectance measuring device, said photoresist film remaining amount calculating device, and said process condition adjusting module. The apparatus of claim 13, wherein the photoresist removing device is Process chambers; A heating plate allowing the substrate to be seated in the process chamber and controlling a temperature of the substrate; A process gas supply module installed to be spaced apart from the heating plate to inject the process gas; And And a UV lamp for converting said process gas into said active gas. The method of claim 14, wherein the process condition control module A process temperature control module for adjusting the temperature of the heating plate; A flow rate control module configured to adjust a flow rate of the process gas supplied from the process gas supply module; An ultraviolet lamp power supply module for adjusting an output of the ultraviolet lamp; A photoresist removal system comprising a process progress time adjustment module for adjusting a process time.  16. The photoresist removal system of claim 15, wherein the amount of ultraviolet light generated by the ultraviolet lamp is measured by an ultraviolet sensor, and the temperature of the heating plate is measured by a temperature sensor. The photoresist removal system of claim 13, wherein the process gas is at least one group selected from oxygen and ozone. 15. The photoresist removal system of claim 13, further comprising a process data storage module for storing data calculated by the light reflectance measuring device and the photoresist residual amount calculating device. The photoresist removal system of claim 13, wherein the thin film is a chromium thin film. In the system for removing the photosensitive film remaining in the black resin formed on the substrate by feedback control, A photoresist removal device for removing the photoresist by reacting an active gas with the photoresist; A light transmittance measuring device for measuring a light transmittance in the black resin to measure a residual amount of the photoresist film remaining after being removed by the photoresist removing device; A photoresist film residual amount calculating device for calculating a photoresist film remaining amount in the black resin by the light transmittance; A process condition adjusting module for changing a process condition of the active gas according to the photoresist film remaining amount calculated by the photoresist film remaining amount calculating device; And And a control unit for controlling said photoresist film removing device, said light transmittance measuring device, said photoresist film remaining amount calculating device, and said process condition adjusting module.

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