KR100825642B1 - Apparatus and method for polishing a wafer - Google Patents

Apparatus and method for polishing a wafer Download PDF

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KR100825642B1
KR100825642B1 KR1020060133262A KR20060133262A KR100825642B1 KR 100825642 B1 KR100825642 B1 KR 100825642B1 KR 1020060133262 A KR1020060133262 A KR 1020060133262A KR 20060133262 A KR20060133262 A KR 20060133262A KR 100825642 B1 KR100825642 B1 KR 100825642B1
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wafer
polishing
polishing unit
unit
edge portion
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KR1020060133262A
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Korean (ko)
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문상태
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동부일렉트로닉스 주식회사
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B9/00—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor
    • B24B9/02—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground
    • B24B9/06—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain
    • B24B9/065—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain of thin, brittle parts, e.g. semiconductors, wafers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

A wafer processing apparatus and a wafer processing method are provided to obtain a wafer having a clean surface by polishing correctly a desired region. A polishing unit(120) is formed with an electronic structure to load a wafer(110) and to polish edge parts of both sides of a wafer. A slurry supply unit(130) is installed to supply a fluid slurry(200) having a magnetic property into the inside of the polishing unit. A gas supply unit(140) supplies N2 gas into the inside of the polishing unit. A motor(150) is formed to rotate the wafer. A method for processing a wafer includes a process for loading the wafer into the inside of the polishing unit, a process for polishing the edge parts of the wafer by supplying the fluid slurry and the N2 gas, and a process for unloading the wafer from the polishing unit.

Description

웨이퍼의 처리장치 및 방법{APPARATUS AND METHOD FOR POLISHING A WAFER}Wafer processing apparatus and method {APPARATUS AND METHOD FOR POLISHING A WAFER}

도 1a 및 도 1b는 종래 기술에 의한 웨이퍼의 처리방법을 개략적으로 나타낸 도면.1A and 1B schematically show a method of processing a wafer according to the prior art;

도 2는 본 발명에 의한 웨이퍼의 처리장치를 나타낸 개략적인 구성도.2 is a schematic configuration diagram showing a wafer processing apparatus according to the present invention.

도 3은 본 발명에 의한 웨이퍼의 처리방법을 나타낸 순서도.3 is a flowchart showing a wafer processing method according to the present invention.

본 발명에서는 웨이퍼의 처리장치 및 방법에 관해 개시된다.The present invention relates to a wafer processing apparatus and method.

일반적으로 평판 웨이퍼 제조시 슬러리를 이용하여 웨이퍼의 에지에 연마를 실시하여 팹(fab)으로 이관되어 수백 스텝(step)의 제조 공정을 진행하여 반도체 소자를 생산한다.In general, in the manufacture of flat wafers, the slurry is polished to the edge of the wafer and transferred to a fab to proceed with a manufacturing process of several hundred steps to produce a semiconductor device.

즉, 일반적으로 반도체 제조 공정은 포토리소그래피(photo lithography), 식각(etch), 금속 또는 절연막 증착 등의 많은 공정을 반복 진행하여 반도체 소자를 생산한다. 이때 포토 공정진행시 포토레지스트를 도포한 후, 웨이퍼 에지로부터 1~2.5㎜를 씨너(thinner)를 이용하여 제거하고 포토 및 식각 공정을 진행한다.That is, in general, a semiconductor manufacturing process is a process of repeating a number of processes, such as photolithography (etch), etching (etch), metal or insulating film deposition to produce a semiconductor device. At this time, after the photoresist is applied during the photo process, 1 to 2.5 mm is removed from the wafer edge using a thinner, and the photo and etching process is performed.

따라서 웨이퍼 에지의 최대 2.5㎜는 각 공정 진행 중 어텍을 받을 가능성이 많으므로 에지 식각이나 연마를 이용하여 에지 부분을 깨끗하게 진행해야만 한다. Therefore, the maximum 2.5mm of the wafer edge is likely to be attacked during each process, so the edge portion must be cleaned by edge etching or polishing.

즉, 웨이퍼에 각각의 공정을 진행해 가면서 웨이퍼 에지는 웨이퍼의 표면보다 상대적으로 큰 압력을 받거나, 세정 능력이 저하되는 등의 어텍(attack)으로 인해 파티클 소스(particle source)를 유발할 가능성이 크기 때문에 에지 부분을 깨끗하게 진행하는 연마나 식각을 진행할 필요가 있다.In other words, as each process proceeds to the wafer, the edge of the wafer is more likely to cause a particle source due to an attack such as being subjected to a relatively larger pressure than the surface of the wafer or deteriorating cleaning ability. It is necessary to grind or etch to clean the part.

이하, 첨부된 도면을 참고하여 종래 기술에 의한 웨이퍼의 처리방법을 설명하면 다음과 같다.Hereinafter, a wafer processing method according to the related art will be described with reference to the accompanying drawings.

도 1a 및 도 1b는 종래 기술에 의한 웨이퍼의 처리방법을 개략적으로 나타낸 도면이다.1A and 1B schematically illustrate a method of treating a wafer according to the prior art.

도 1a에 도시한 바와 같이, 웨이퍼(10)의 에지 부분에 식각 가스로 N2 가스를 흘려주어 웨이퍼(10)의 에지 부분을 깨끗하게 한다.As shown in FIG. 1A, an N 2 gas is flowed into the edge portion of the wafer 10 as an etching gas to clean the edge portion of the wafer 10.

또한, 도 1b에 도시한 바와 같이, 웨이퍼(10)의 에지 부분에 슬러리를 공급하면서 연마하여 웨이퍼(10)의 에지 부분을 깨끗하게 한다.In addition, as shown in FIG. 1B, the edge portion of the wafer 10 is cleaned by polishing while supplying a slurry to the edge portion of the wafer 10.

그러나 상기와 같은 종래 기술에 의한 웨이퍼의 처리방법은 다음과 같은 문제점이 있었다.However, the conventional method for treating a wafer has the following problems.

즉, 식각 가스 또는 슬러리를 이용하여 웨이퍼의 에지 부분을 깨끗하게 하고자 할 때 원하는 에지 부분의 제어가 불가능하거나 제거 효율이 약하다는 문제가 있었다.That is, when the edge portion of the wafer is to be cleaned using the etching gas or the slurry, there is a problem that control of the desired edge portion is impossible or the removal efficiency is weak.

본 발명은 웨이퍼 에지부분을 깨끗하게 제어하여 각각의 공정 진행 전후에 어텍을 방지하여 웨이퍼의 수율을 향상시키도록 한 웨이퍼의 처리장치 및 방법을 제공하는데 그 목적이 있다.It is an object of the present invention to provide a wafer processing apparatus and method for improving the yield of a wafer by controlling the wafer edge portion cleanly and preventing attack before and after each process.

본 발명에 따른 웨이퍼의 처리장치는 웨이퍼를 로딩하여 상기 웨이퍼의 양측 에지 부분을 연마하기 위해 전자석 구조로 이루어진 연마부; 및 상기 연마부내에 자성을 띤 유체 슬러리를 공급하는 슬러리 공급부가 포함되어 구성되는 것을 특징으로 한다.The apparatus for processing a wafer according to the present invention includes: a polishing unit having an electromagnet structure for loading a wafer to polish both edge portions of the wafer; And a slurry supply part for supplying a magnetic fluid slurry in the polishing part.

본 발명에 따른 웨이퍼의 처리방법은 공정이 완료된 웨이퍼를 전자석로 이루어진 연마부내에 로딩하는 단계; 상기 연마부내에 자성을 띤 유체 슬러리를 공급하여 상기 웨이퍼의 에지 부분을 연마하는 단계; 및 상기 연마가 완료된 웨이퍼를 연마부로부터 언로딩하는 단계가 포함되어 구성되는 것을 특징으로 한다.According to an aspect of the present invention, there is provided a method of processing a wafer, the method including: loading a wafer on which a process is completed into a polishing unit made of an electromagnet; Supplying a magnetic fluid slurry into the polishing portion to polish an edge portion of the wafer; And unloading the polished wafer from the polishing unit.

이하, 첨부된 도면을 참고하여 본 발명에 의한 웨이퍼의 처리장치 및 방법을 보다 상세히 설명하면 다음과 같다.Hereinafter, an apparatus and method for processing a wafer according to the present invention will be described in detail with reference to the accompanying drawings.

도 2는 본 발명에 의한 웨이퍼의 처리장치를 개략적으로 나타낸 구성도이다.2 is a configuration diagram schematically showing an apparatus for processing a wafer according to the present invention.

도 2에 도시한 바와 같이, 포토 및 식각 공정이 완료된 웨이퍼(110)와, 상기 웨이퍼(110)를 로딩하여 상기 웨이퍼(110)의 양측 에지 부분을 연마하기 위해 전자석 구조로 이루어진 연마부(120)와, 상기 연마부(120)내에 자성을 띤 유체 슬러리(200)를 공급하는 슬러리 공급부(130)와, 상기 연마부(120)내에 N2 가스를 공급하는 가스 공급부(140)와, 상기 웨이퍼(110)를 회전시키는 모터(150)를 포함하여 구성되어 있다.As shown in FIG. 2, a wafer 110 having a photo and etching process and a polishing unit 120 having an electromagnet structure for loading the wafer 110 to polish both edge portions of the wafer 110. And a slurry supply unit 130 for supplying the magnetic fluid slurry 200 into the polishing unit 120, a gas supply unit 140 for supplying N 2 gas into the polishing unit 120, and the wafer ( The motor 150 which rotates 110 is comprised.

상기와 같이 구성된 본 발명에 의한 웨이퍼의 처리장치는 자성을 띤 유체 슬러리를 사용하여 웨이퍼(110)의 에지 부분을 연마한다. The wafer treating apparatus according to the present invention configured as described above polishes the edge portion of the wafer 110 using a magnetic fluid slurry.

또한, 전자석 구조를 가지는 연마부를 구성하여 N2 가스를 공급하면서 웨이퍼(110)의 에지 부분을 연마할 수 있도록 구성한다.In addition, the polishing portion having the electromagnet structure is configured to be able to polish the edge portion of the wafer 110 while supplying the N 2 gas.

또한, 상기 전자석을 이용한 연마부(120)는 상기 웨이퍼(110)의 에지 부위에 따라 별도로 자성 유체를 공급하기 위한 장치를 구성하고 있다.In addition, the polishing unit 120 using the electromagnet configures an apparatus for supplying a magnetic fluid separately according to the edge portion of the wafer 110.

보다 구체적으로 본 발명에 의한 웨이퍼의 처리방법을 설명하면 다음과 같다.More specifically, the processing method of the wafer according to the present invention will be described.

도 3은 본 발명에 의한 웨이퍼의 처리방법을 나타낸 순서도이다.3 is a flowchart showing a wafer processing method according to the present invention.

도 3에 도시한 바와 같이, 포토 및 식각 공정이 완료된 웨이퍼(110)를 전자석 구조를 갖는 연마부(120)내에 로딩한다(S100).As shown in FIG. 3, the wafer 110 on which the photo and etching processes are completed is loaded into the polishing unit 120 having an electromagnet structure (S100).

여기서, 상기 연마부(120)는 상기 웨이퍼(110)의 에지 부위에 따라 별도로 자성을 갖는 유체 슬러리를 공급할 수 있도록 구성되어 있다.Here, the polishing unit 120 is configured to supply a fluid slurry having magnetic properties separately according to the edge portion of the wafer 110.

이어서, 상기 연마부(120)내로 웨이퍼(110)가 로딩되면 상기 연마부(120)내로 슬러리 공급부(130)에서 자성을 띤 유체 슬러리(200)를 공급하여 상기 웨이퍼(110)의 에지 부분을 연마한다(S200). 이때 상기 연마부(120) 내에는 N2 가스가 가스 공급부(140)를 통해서 공급된다.Subsequently, when the wafer 110 is loaded into the polishing unit 120, the magnetic fluid slurry 200 is supplied from the slurry supply unit 130 into the polishing unit 120 to polish the edge portion of the wafer 110. (S200). At this time, the N 2 gas is supplied through the gas supply unit 140 in the polishing unit 120.

또한, 상기 웨이퍼(110)의 에지 부분을 연마할 때 상기 웨이퍼(110)는 모터(150)에 의해 일방향으로 회전이 된다.In addition, when grinding the edge portion of the wafer 110, the wafer 110 is rotated in one direction by the motor 150.

그리고 상기 웨이퍼(110)의 에지 부분에 대한 연마가 완료되면 상기 연마부(120)로부터 웨이퍼(110)를 언로딩한다(S300).When the polishing of the edge portion of the wafer 110 is completed, the wafer 110 is unloaded from the polishing unit 120 (S300).

한편, 이상에서 설명한 본 발명은 상술한 실시예 및 첨부된 도면에 한정되는 것이 아니고, 본 발명의 기술적 사상을 벗어나지 않는 범위내에서 여러 가지 치환, 변형 및 변경이 가능하다는 것이 본 발명이 속하는 기술분야에서 통상의 지식을 가진 자에게 있어 명백할 것이다.On the other hand, the present invention described above is not limited to the above-described embodiment and the accompanying drawings, it is possible that various substitutions, modifications and changes within the scope without departing from the technical spirit of the present invention. It will be apparent to those of ordinary skill in Esau.

이상에서 설명한 바와 같이 본 발명에 의한 웨이퍼의 처리장치 및 방법은 다음과 같은 효과가 있다.As described above, the wafer processing apparatus and method of the present invention have the following effects.

즉, 자성을 띤 유체 슬러리를 이용하여 웨이퍼의 에지 부분을 연마함으로써 원하는 영역을 정확하게 연마할 수 있어 표면이 깨끗한 웨이퍼를 얻어 소자의 수율을 향상시킬 수 있다.That is, by polishing the edge portion of the wafer by using a magnetic fluid slurry, the desired area can be polished accurately, so that a wafer having a clean surface can be obtained to improve the yield of the device.

Claims (5)

웨이퍼를 로딩하여 상기 웨이퍼의 양측 에지 부분을 연마하기 위해 전자석 구조로 이루어진 연마부;A polishing unit having an electromagnet structure for loading a wafer to polish both edge portions of the wafer; 상기 연마부내에 자성을 띤 유체 슬러리를 공급하는 슬러리 공급부; 및A slurry supply unit for supplying a magnetic fluid slurry into the polishing unit; And 상기 연마부내에 N2 가스를 공급하는 가스 공급부를 포함하는 웨이퍼의 처리장치.And a gas supply unit for supplying N 2 gas into the polishing unit. 삭제delete 제 1항에 있어서, The method of claim 1, 상기 웨이퍼를 회전시키는 모터가 더 포함되어 구성되는 것을 특징으로 하는 웨이퍼의 처리장치.Wafer processing apparatus further comprises a motor for rotating the wafer. 공정이 완료된 웨이퍼를 전자석로 이루어진 연마부내에 로딩하는 단계;Loading the finished wafer into a polishing part made of an electromagnet; 상기 연마부내에 자성을 띤 유체 슬러리 및 N2 가스를 공급하여 상기 웨이퍼의 에지 부분을 연마하는 단계; 및Supplying a magnetic fluid slurry and N 2 gas into the polishing portion to polish the edge portion of the wafer; And 상기 연마가 완료된 웨이퍼를 연마부로부터 언로딩하는 단계가 포함되어 구성되는 것을 특징으로 하는 웨이퍼의 처리방법.And unloading the polished wafer from the polishing unit. 제 4항에 있어서, 상기 웨이퍼의 에지 부분을 연마하는 단계는5. The method of claim 4, wherein polishing the edge portion of the wafer is 상기 웨이퍼를 회전시켜 상기 웨이퍼의 에지 부분을 연마하는 것을 특징으로 하는 웨이퍼의 처리방법.Rotating the wafer to polish the edge portion of the wafer.
KR1020060133262A 2006-12-23 2006-12-23 Apparatus and method for polishing a wafer KR100825642B1 (en)

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Cited By (1)

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Publication number Priority date Publication date Assignee Title
CN111331506A (en) * 2018-12-18 2020-06-26 夏泰鑫半导体(青岛)有限公司 Wafer trimming module and system

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Publication number Priority date Publication date Assignee Title
KR20020010910A (en) * 1999-05-06 2002-02-06 엠피엠 리미티드 Magnetic polishing fluids
KR200288678Y1 (en) 2002-06-17 2002-09-11 김정수 Locking apparatus of wheel with waper polishing machine
KR20030049800A (en) * 2001-12-17 2003-06-25 엠피엠 리미티드 A polishing method and device
KR20030093725A (en) * 2002-06-05 2003-12-11 삼성전자주식회사 Pad conditioner construction of device polishing semiconductor wafer
KR20060091458A (en) * 2005-02-15 2006-08-21 삼성코닝 주식회사 Chemical mechanical polishing apparatus

Patent Citations (5)

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Publication number Priority date Publication date Assignee Title
KR20020010910A (en) * 1999-05-06 2002-02-06 엠피엠 리미티드 Magnetic polishing fluids
KR20030049800A (en) * 2001-12-17 2003-06-25 엠피엠 리미티드 A polishing method and device
KR20030093725A (en) * 2002-06-05 2003-12-11 삼성전자주식회사 Pad conditioner construction of device polishing semiconductor wafer
KR200288678Y1 (en) 2002-06-17 2002-09-11 김정수 Locking apparatus of wheel with waper polishing machine
KR20060091458A (en) * 2005-02-15 2006-08-21 삼성코닝 주식회사 Chemical mechanical polishing apparatus

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111331506A (en) * 2018-12-18 2020-06-26 夏泰鑫半导体(青岛)有限公司 Wafer trimming module and system

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