KR100823322B1 - Coating method and apparatus of mold - Google Patents

Coating method and apparatus of mold Download PDF

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Publication number
KR100823322B1
KR100823322B1 KR1020060104676A KR20060104676A KR100823322B1 KR 100823322 B1 KR100823322 B1 KR 100823322B1 KR 1020060104676 A KR1020060104676 A KR 1020060104676A KR 20060104676 A KR20060104676 A KR 20060104676A KR 100823322 B1 KR100823322 B1 KR 100823322B1
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South Korea
Prior art keywords
mold
turntable
base member
thin film
angle
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KR1020060104676A
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Korean (ko)
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황연
이호재
이기용
박순섭
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한국생산기술연구원
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3435—Applying energy to the substrate during sputtering
    • C23C14/3442—Applying energy to the substrate during sputtering using an ion beam
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C23C14/505—Substrate holders for rotation of the substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

A method and an apparatus for forming a thin film on a mold are provided to form a uniform thin film on a subminiature mold having a curved surface or irregularities, minimize the shadow effect, and form a uniform thin film on the mold irrespective of the shape of the mold. An apparatus(10) for forming a thin film on a mold comprises a vacuum chamber(11), a turntable(14) installed in the vacuum chamber and rotated in forward and backward directions by a motor(12), a sputter gun(40) installed at a side corresponding to a mold(100) installed on the turntable, and a turntable angle adjusting unit(20) installed in the vacuum chamber to support the turntable and adjust an angle of the turntable relative to the sputter gun, wherein the turntable angle adjusting unit includes a fixed base member(21) fixed in the chamber, a rotating base member(23) to which a rotating shaft(22) projected from a central portion of the fixed base member is connected by a hinge, and on which the turntable is installed, and three screws(24) which are screwed to the rotating base member, and of which end portions come into contact with the fixed base member to adjust an angle of the rotating base member relative to the fixed base member, and wherein the apparatus further comprises an ion gun(60) which is installed at a position within the chamber corresponding to the mold mounted on the table, and of which angle is adjusted by an angle adjusting unit(61).

Description

금형의 박막 형성 방법 및 장치{coating method and apparatus of mold} Method and apparatus for forming thin film of mold {coating method and apparatus of mold}

도 1은 본 발명에 따른 금형의 박막 형성 장치를 나타내 보인 단면도,1 is a cross-sectional view showing a thin film forming apparatus of a mold according to the present invention,

도2는 도 1에 도시된 턴테이블 각도 조절수단을 발췌하여 도시한 단면도로서 작동상태를 나타내 보인 것이다. FIG. 2 is a cross-sectional view showing the operation state of the turntable angle adjusting means shown in FIG.

도 3은 도 1에 도시된 스퍼터 각도 조절수단을 이용하여 스퍼터 건의 각도를 조절하는 스퍼터 건 각도 조절수단을 발췌하여 도시한 단면도.3 is a cross-sectional view showing an extract of the sputter gun angle adjusting means for adjusting the angle of the sputter gun using the sputter angle adjusting means shown in FIG.

본 발명은 금형의 박막 코팅방법 및 그 장치에 관한 것으로, 더 상세하게는 초정밀 금형에 경도나 내마모성 등과 같은 특별한 기능을 부여하기 위하여 박막의 형성 시 음영효과(shadow effect)를 최소화 할 수 있는 금형의 박막 코팅 방법 및 그 정치에 관한 것이다.The present invention relates to a method for coating a thin film of a mold and an apparatus thereof, and more particularly, to provide a special function such as hardness or wear resistance to an ultra-precision mold of a mold capable of minimizing a shadow effect when forming a thin film. A thin film coating method and its standing.

최근 전기도금이나 화학도금 등과 같은 습식코팅법에 대체되는 건식코팅법으로서, 항공분야나 전기전자 분야 등의 첨단산업분야에서 필수적인 기술로 인식되고 있는 화학증착법(CVD; Chemical Vapor Deposition)과 물리 진공 증착법(PVD; Physical Vapor Deposition)은 기재(基材)의 표면에 특별한 기능을 갖는 표면 피복 층을 형성하는 코팅방법으로 주목을 받고 있다. As a dry coating method which is recently replaced by wet coating methods such as electroplating and chemical plating, chemical vapor deposition (CVD) and physical vacuum deposition methods, which are recognized as essential technologies in high-tech industries such as aviation and electric and electronic fields, are (PVD; Physical Vapor Deposition) has attracted attention as a coating method for forming a surface coating layer having a special function on the surface of the substrate.

이러한 건식 코팅법은 종래의 코팅방법과는 달리 중금속 등의 유해물질을 배출하지 않을 뿐만 아니라 비교적 값싼 코팅재료를 사용해 미려한 외관, 고경도, 내마모성, 내열성 및 내식성 등을 갖는 표면피복을 행할 수 있는 장점이 있다. 또한 복잡한 형상을 가지는 기재의 표면에도 피복층의 증착이 가능한 동시에 응용범위가 넓다는 장점을 가진다. Unlike the conventional coating method, the dry coating method does not emit harmful substances such as heavy metals, and uses a relatively inexpensive coating material to perform a surface coating having a beautiful appearance, high hardness, wear resistance, heat resistance, and corrosion resistance. There is this. In addition, it is possible to deposit the coating layer on the surface of the substrate having a complicated shape, and at the same time has an advantage of wide application range.

이와 같은 건식코팅법 중 화학 진공 증착방법은 열이나 플라즈마, 자외선 등의 에너지 단독 또는 결합해서 사용하여 가열된 고온상태의 기재 표면 위에서 둘 또는 그 이상의 기체성분이 열분해, 환원, 산화 등의 화학반응에 의해 기상으로부터 증기압이 낮은 물질을 생성하여 박막으로 석출(응축)시키는 방법이다. 그리고, 물리 진공 증착은 진공의 분위기에서 타겟금속에 강한 전류를 인가하여 이온을 생성시키고, 이 이온들이 기재에 증착됨으로써 박막을 형성시키는 방법으로 스퍼터링, 이온 플레이팅, 활성화 반응 증착 등이 있다.Among these dry coating methods, the chemical vacuum deposition method uses two or more gaseous components on a surface of a heated high temperature state alone or in combination with energy such as heat, plasma, ultraviolet light, or the like for thermal decomposition, reduction, and oxidation. This produces a substance with low vapor pressure from the gas phase and precipitates (condenses) it into a thin film. In addition, physical vacuum deposition generates ions by applying a strong current to a target metal in a vacuum atmosphere, and these ions are deposited on a substrate to form a thin film, such as sputtering, ion plating, and activation reaction deposition.

한편, 요철 또는 곡면을 가지는 초정밀 금형의 표면에 상기와 물리 진공 증착 방법을 이용하여 박막을 형성하는 경우 스퍼터 건과 증착대상물의 각도 차이에 의한 증착되지 않은 부분을 야기시키는 음영효과(shadow effect)에 의해 균일한 박막을 형성할 수 없는 문제점이 있다. On the other hand, when the thin film is formed on the surface of the ultra-precision mold having concave-convex or curved surface by using the physical vacuum deposition method and the shadow effect to cause the undeposited portion due to the difference in the angle between the sputter gun and the deposition target. There is a problem that a uniform thin film cannot be formed.

본 발명은 상술한 바와 같은 문제점을 해결하기 위한 것으로, 곡면 또는 요철을 가지는 초소형 금형에 균일한 박막을 형성할 수 있으며, 음영효과를 최소화 할 수 있는 금형의 박막 형성 방법 및 장치를 제공함에 그 목적이 있다.The present invention is to solve the problems described above, it is possible to form a uniform thin film on the micro mold having a curved surface or irregularities, and to provide a method and apparatus for forming a thin film of the mold capable of minimizing the shading effect. There is this.

본 발명의 다른 목적은 금형의 형상에 관계없이 박막을 균일하게 형성할 수 있는 금형의 박막 형성방법 및 그 장치를 제공함에 있다.Another object of the present invention is to provide a method and apparatus for forming a thin film of a mold capable of uniformly forming a thin film regardless of the shape of the mold.

상기와 같은 목적을 달성하기 위한 본 발명 금형의 박막 형성방법은Thin film forming method of the present invention mold for achieving the above object is

회전하는 테이블에 요철 또는 곡면이 형성된 금형을 회전 가능한 턴테이블에 장착하는 금형 고정단계와,A mold fixing step of mounting a mold having a concave-convex or curved surface on a rotating table to a rotatable turntable;

박막을 형성하기 위한 금형의 요철 또는 곡면에 이온의 증착이 원활하게 이루어질 수 있도록 스퍼터 건의 각도 또는 턴테이블의 각도를 조정하는 각도조절단계와,An angle adjusting step of adjusting the angle of the sputter gun or the angle of the turntable so that the deposition of ions on the uneven or curved surface of the mold for forming a thin film can be made smoothly;

상기 턴테이블을 회전시키면서 상기 스퍼터 건을 이용하여 상기 금형의 표면에 박막을 형성하는 박막 형성단계를 포함하여 된 것을 그 특징으로 한다 .And forming a thin film on the surface of the mold by using the sputter gun while rotating the turntable.

상기 목적을 달성하기 위한 금형의 박막 형성장치는 The thin film forming apparatus of the mold for achieving the above object

진공챔버와, 이 진공챔버의 내에 설치되며 모터에 의해 정, 역회전되는 턴테이블과, A vacuum chamber, a turntable installed in the vacuum chamber and forward and reverse rotated by a motor,

상기 턴테이블에 설치되는 금형과 대응되는 측에 위치되도록 챔버에 설치되는 스퍼터 건과, A sputter gun installed in the chamber so as to be positioned on a side corresponding to the mold installed on the turntable;

상기 금형에 대해 진공챔버에 설치되며 상기 스터퍼 건에 대하여 턴테이블의 각도를 조절하는 턴테이블 각도 조절수단을 구비하여 된 것을 그 특징으로 한다. It is characterized in that it is provided in the vacuum chamber with respect to the mold and the turntable angle adjusting means for adjusting the angle of the turntable with respect to the stuffer gun.

본 발명에 있어서, 상기 턴테이블 각도 조절수단은 상기 챔버에 고정되는 고정베이스부재와, 상기 고정베이스부재의 중앙부로부터 돌출되는 회동축이 힌지 결합되며 턴테이블이 설치되는 회동베이스 부재와, 상기 회동베이스부재에 나사 결합되며 단부가 상기 고정 베이스부재에 접촉되어 상기 고정 베이스 부재에 대해 회동베이스 부재의 각도를 조정하기 위한 세 개의 스크류들을 구비한다. In the present invention, the turntable angle adjusting means includes a fixed base member fixed to the chamber, a rotating shaft projecting from a central portion of the fixed base member hingedly coupled to the rotating base member, and a rotating base member; And three screws that are screwed and whose ends are in contact with the fixed base member to adjust the angle of the pivot base member relative to the fixed base member.

이하에서 첨부된 도면을 참조하여 본 발명에 따른 금형의 박막 형성방법 및 그 장치의 바람직한 실시예를 상세하게 설명하면 다음과 같다.Hereinafter, with reference to the accompanying drawings will be described in detail a preferred embodiment of the method and apparatus for forming a thin film of the mold according to the present invention.

본 발명에 따른 금형의 박막 형성장치는 요철 또는 곡면을 가지는 초소형 금형에 금속 박막을 형성하기 위한 것으로 그 일 실시예를 도 1 내지 도 3에 나타내 보였다. The apparatus for forming a thin film of a mold according to the present invention is for forming a metal thin film on a micro mold having irregularities or curved surfaces, and an embodiment thereof is illustrated in FIGS. 1 to 3.

도면을 참조하면 금형의 박막 증착장치(10)는 진공챔버(11)의 내부에 설치되는 것으로, 모터(12)에 의해 정역 회전되며 금형이 장착되는 장착부(13)를 가진 턴테이블(14)를 구비하는데, 이 턴테이블(14)은 각도 조절수단(20)에 의해 각도 조절이 가능하다. 그리고 상기 상기 턴테이블(14)의 장착부(13)와 대응되는 진공챔버(11)에는 스퍼터 건(40)이 설치된다. Referring to the drawings, the thin film deposition apparatus 10 of the mold is installed inside the vacuum chamber 11 and has a turntable 14 having a mounting part 13 on which the mold is mounted by being rotated forward and backward by the motor 12. To this end, the turntable 14 is angle adjustable by the angle adjusting means 20. The sputter gun 40 is installed in the vacuum chamber 11 corresponding to the mounting portion 13 of the turntable 14.

상기 스퍼터 건(40)은 박막을 형성하기 위한 금형에 양극이 인가된 상태에서 이와 대응되는 음극이 인가되어 글로우 방전을 일으킬 수 있는 타겟을 구비한다. 여기에서 상기 타겟은 공구 또는 금형의 피막재로 널리 이용되는 Ir, Re, Cr 및 Ti화합물인, TiN, TiC 가 사용될 수 있다. The sputter gun 40 has a target capable of causing a glow discharge by applying a cathode corresponding thereto while an anode is applied to a mold for forming a thin film. Here, the target may be TiN, TiC, which is a compound of Ir, Re, Cr, and Ti, which is widely used as a coating material of a tool or a mold.

각도 조절수단(20)은 턴테이블(14)에 장착되는 박막 형성 대상물인 초정밀 금형(100)을 스퍼터 건(40)에 대해 각도를 조절 할 수 있도록 턴테이블(14)의 각도를 조절할 수 있는 것으로, 상기 챔버(11)에 설치되는 고정베이스부재(21)와, 상기 고정베이스부재(21)의 중앙부로부터 돌출되는 회동축(22)이 힌지결합되며 턴테이블(14)이 설치되는 회동베이스부재(23)를 구비한다. 여기에서 상기 고정베이스 부재(21)는 진공챔버(11)에 설치되는 별도의 서포트부재에 의해 지지될 수 있으며, 회동축(22)과 회동베이스부재(23)의 결합은 볼죠인트에 의해 이루어질 수 있다. 그리고 상기 회동베이스부재(23)의 가장자리부에는 이와 나사 결합되며 단부가 고정베이스부재(21)에 접촉되어 상기 고정베이스부재(21)에 대해 회동베이스부재(23)의 각도를 조절하는 적어도 세 개의 스크류(24)들을 구비한다. 상기 세 개의 스크류(24)는 삼각형의 형상으로 배열함이 바람직하다. 상기 각도 조절수단은 상술한 실시예에 의해 한정되지 않고 웜, 웜휠, 스테핑 모터의 결합으로 이루어질 수 있다.The angle adjusting means 20 may adjust the angle of the turntable 14 to adjust the angle of the ultra-precision mold 100 mounted on the turntable 14 with respect to the sputter gun 40. The fixed base member 21 installed in the chamber 11 and the rotating shaft 22 protruding from the center portion of the fixed base member 21 are hinged and the rotating base member 23 on which the turntable 14 is installed. Equipped. The fixed base member 21 may be supported by a separate support member installed in the vacuum chamber 11, the coupling of the rotating shaft 22 and the rotating base member 23 can be made by a ball joint. have. At least three screws coupled to the edge portion of the pivot base member 23 and having an end contacting the fixed base member 21 adjust an angle of the pivot base member 23 with respect to the fixed base member 21. With screws 24. The three screws 24 are preferably arranged in the shape of a triangle. The angle adjusting means is not limited to the above-described embodiment, but may be made of a combination of a worm, a worm wheel, and a stepping motor.

한편, 상기 스퍼터 건(40)은 상기 턴테이블(14)에 대해 각도를 조절할 수 있는 별도의 스퍼터 건 각도 조절수단(50)을 더 구비할 수 있다. 이 스퍼터 건 각도조절수단(50)은 상기 각도 조절수단의 실시예와 실질적으로 동일한 구조로 형성될 수 있다. 즉, 상기 스퍼터 건(40)이 설치되는 가동브라켓(51)과, 상기 가동브라켓(51)의 중앙부로부터 돌출되는 회동축(52)이 힌지 결합되는 고정브라켓(53)을 구비한다. 여기에서 상기 고정브라켓(53)은 진공챔버(11)의 내측에 설치되거나 진공챔버에 별도의 서포트부재에 의해 지지될 수 있으며, 회동축(52)과 고정브라켓(53)의 결합은 볼죠인트에 의해 이루어질 수 있다. 그리고 상기 고정브라켓(53)에는 이와 나사 결합되며 단부가 상기 가동 브라켓(51)의 상면에 접촉되어 상기 고정브라켓에 대해 가동브라켓의 각도를 조정하기 위한 적어도 세 개의 스크류(54-56)들을 구비한다.On the other hand, the sputter gun 40 may further include a separate sputter gun angle adjusting means 50 that can adjust the angle with respect to the turntable (14). The sputter gun angle adjusting means 50 may be formed in substantially the same structure as the embodiment of the angle adjusting means. That is, the movable bracket 51 to which the sputter gun 40 is installed is provided, and the fixing bracket 53 to which the pivot shaft 52 protruding from the center of the movable bracket 51 is hinged. Here, the fixing bracket 53 may be installed inside the vacuum chamber 11 or supported by a separate support member in the vacuum chamber, and the rotation shaft 52 and the fixing bracket 53 may be coupled to the ball joint. It can be made by. In addition, the fixing bracket 53 is screwed therewith and its end is in contact with the upper surface of the movable bracket 51 and has at least three screws 54-56 for adjusting the angle of the movable bracket with respect to the fixing bracket. .

한편, 챔버 내에는 상기 턴테이블(14)에 장착된 금형과 각도를 이루도록 설치되는 이온건 각도 조절수단(61)에 의해 각도 조절되는 이온건(60)이 더 구비된다. 상기 이온건 각도 조절수단(61)의 각도 조절수단들과 실질적으로 동일한 구조를 가지고 있으므로 다시 설명하지 않기로 한다. 상기 기온건(50)은 스퍼터 건(30)에 의해 방출된 후 가속되어 금형의 표면에 부착되는 박막의 결합력을 높일 수 있다. On the other hand, the chamber is further provided with an ion gun 60 that is angle-adjusted by the ion gun angle adjusting means 61 is installed to form an angle with the mold mounted to the turntable (14). Since the ion gun angle adjusting means 61 has substantially the same structure as the angle adjusting means, it will not be described again. The air temperature gun 50 may be accelerated after being discharged by the sputter gun 30 to increase the bonding force of the thin film attached to the surface of the mold.

한편, 상기와 같은 금형의 박막 형성장치를 이용한 금형의 박막 형성방법은 회전하는 턴테이블(14)에 요철 또는 곡면이 형성된 금형(100)을 회전 가능한 턴테이블(14)에 장착하는 금형 고정단계와, 박막을 형성하기 위한 금형(100)의 요철 또는 곡면부(101)에 이온의 주사가 원활하게 이루어질 수 있도록 턴테이블(14) 또는 스퍼터 건(40)의 각도를 조절하는 각도조절단계와, 상기 턴테이블(14)을 회전시키면서 상기 스퍼터 건(40)을 이용하여 상기 금형(100)의 표면에 박막을 형성하는 박막 형성단계를 포함한다. On the other hand, the thin film forming method of the mold using the thin film forming apparatus of the mold as described above, the mold fixing step of mounting the mold 100, the uneven or curved surface formed on the rotating turntable 14 to the rotatable turntable 14, and a thin film An angle adjusting step of adjusting the angle of the turntable 14 or the sputter gun 40 so that the ions are smoothly scanned on the uneven or curved portion 101 of the mold 100 to form a mold, and the turntable 14 And a thin film forming step of forming a thin film on the surface of the mold 100 by rotating the sputter gun 40.

상기와 같이 구성된 본 발명에 따른 금형의 박막 형성장치의 작용과 이를 통한 금형의 박막 형성방법을 보다 상세하게 설명하면 다음과 같다. Referring to the action of the thin film forming apparatus of the mold according to the present invention configured as described above and the thin film forming method of the mold in detail as follows.

먼저 턴테이블(14)에 박막을 형성하고자 하는 초정밀 금형(100)이 장착된 상태에서 스퍼터 건(40)의 타겟에 음극이 인가되고 테이블의 금형에 양극이 인가됨에 따른 글로우(grow) 방전이 이루어진다. 이 때 타겟에 조사되는 이온은 수 백 내지 수천 전자볼트(keV)의 운동에너지를 가지고 음형의 표면에 증착된다. 이와 같은 증착은 스퍼터링효과와 높은 운동에너지 때문에 금속박막과 금형 모재와의 밀착성이 우수함은 물론이고, 박막 막생성속도가 높다. First, a cathode is applied to a target of the sputter gun 40 in a state where the ultra-precision mold 100, which is to form a thin film on the turntable 14, and a glow discharge is generated as the anode is applied to the mold of the table. At this time, the ion irradiated to the target is deposited on the negative surface with kinetic energy of several hundred to thousands of electron volts (keV). Such deposition is not only excellent in adhesion between the metal thin film and the mold base material due to the sputtering effect and high kinetic energy, but also has a high film production rate.

상기와 같이 증착이 이루어지는 과정에서 상기 금형의 표면에 요철 또는 곡면으로 이루어지는 경우 음영효과에 의해 증착되지 않는 부분이 존재하게 되는데, 이러한 증착 불량 부분은 턴테이블 각도 조절수단(20)에 의해 턴테이블의 각도 또는 스퍼터건 각도조절 수단(50)에 의한 스퍼터 건(40)의 각도를 조정함으로써 방지할 수 있다. 즉, 도 2 및 도 3에 도시된 바와 같이 턴테이블 각도 조절수단(20)의 스크류(24)들을 각각 조정하여 스퍼터 건(40)의 타겟으로부터 이동되는 이온이 회전되는 금형의 사면까지 도달 할 수 있도록 조정 가능하므로 음영효과에 의한 박막형성 불량을 근본적으로 방지할 수 있다. In the process of the deposition as described above, if the surface of the mold is formed of irregularities or curved surface there is a portion that is not deposited by the shadow effect, this poor deposition portion by the turntable angle adjusting means 20 or the angle of the turntable This can be prevented by adjusting the angle of the sputter gun 40 by the sputter gun angle adjusting means 50. That is, as shown in FIGS. 2 and 3, the screws 24 of the turntable angle adjusting means 20 are respectively adjusted so that the ions moved from the target of the sputter gun 40 can reach the slope of the rotating mold. As it can be adjusted, it is possible to fundamentally prevent thin film formation defects caused by shading effects.

이와 같이 박막(Ir, Re, TiN 등으로 이루어진 박막)이 처리된 금형은 박막이 형성되지 않은 금형에 비하여 내마모성이 우수하고, 내구수명이 늘릴 수 있다. As described above, the mold processed with the thin film (thin film made of Ir, Re, TiN, etc.) may have better wear resistance and longer durability than the mold without the thin film formed thereon.

이상에서 설명한 바와 같이 본 발명에 따른 금형의 박막 형성방법 및 그 장치는 금형에 박막을 형성함에 있어서, 턴테이블 또는 스퍼터 건의 각도를 조정함으로써 곡면 또는 요철이 형성된 금형의 표면에 균일한 두께의 박막을 형성할 수 있으며 음영효과에 의한 박막 형성불량을 근본적으로 방지할 수 있다. As described above, the method and apparatus for forming a thin film of a mold according to the present invention form a thin film having a uniform thickness on a surface of a mold on which curved surfaces or irregularities are formed by adjusting an angle of a turntable or a sputter gun when forming a thin film on a mold. And it can fundamentally prevent the thin film formation defect by the shading effect.

본 발명은 도면에 도시된 일 실시예를 참고로 설명되었으나 이는 예시적인 것에 불과하며, 당해 기술 분야에서 통상의 지식을 가진 자라면 이로부터 다양한 변형 및 균등한 실시예가 가능하다는 점을 이해할 것이다. 예컨데, 광학용 정밀 금형, 인쇄용 부품, 가이드 롤, 아연 다이캐스트 금형, 알루미늄 다이캐스트 금형 등 여러 정밀 금형 시계 외장부품, 시계 줄, 양식기, 안경테, 액세서리 등에 광범위하게 적용할 수 있다. Although the present invention has been described with reference to one embodiment shown in the drawings, this is merely exemplary, and it will be understood by those skilled in the art that various modifications and equivalent embodiments are possible. For example, it can be widely applied to various precision mold watch exterior parts such as optical precision molds, printing parts, guide rolls, zinc die cast molds, aluminum die cast molds, watch bands, flatware, eyeglass frames and accessories.

Claims (4)

삭제delete 진공챔버와, 이 진공챔버의 내에 설치되며 모터에 의해 정,역회전되는 턴테이블과, A vacuum chamber, a turntable installed in the vacuum chamber and rotated forward and reverse by a motor, 상기 턴테이블에 설치되는 금형과 대응되는 측에 위치되는 스퍼터 건과, A sputter gun located on a side corresponding to the mold installed on the turntable, 상기 진공챔버에 설치되어 상기 턴테이블을 지지하며 스퍼터 건에 대해 턴테이블의 각도를 조절하는 턴테이블 각도 조절수단을 구비하며,A turntable angle adjusting means installed in the vacuum chamber to support the turntable and to adjust the angle of the turntable with respect to the sputter gun, 상기 턴테이블 각도 조절수단은 상기 챔버에 고정되는 고정 베이스부재와, 상기 고정 베이스부재의 중앙부로부터 돌출되는 회동축이 힌지 결합되며 턴테이블이 설치되는 회동베이스 부재와, 상기 회동베이스부재에 나사 결합되며 단부가 상기 고정 베이스부재에 접촉되어 상기 고정 베이스 부재에 대해 회동베이스 부재의 각도를 조정하기 위한 세 개의 스크류들을 구비하고,The turntable angle adjusting means includes a fixed base member fixed to the chamber, a pivoting shaft projecting from a central portion of the fixed base member, hingedly coupled, and a rotating base member on which a turntable is installed, and screwed to the pivotal base member. Three screws in contact with the fixed base member for adjusting the angle of the pivot base member relative to the fixed base member, 상기 테이블에 장착되는 금형과 대응되는 챔버에 각도조절수단에 의해 각도 조절되는 이온건을 구비하여 된 것을 특징으로 하는 금형의 박막 형성장치.Thin film forming apparatus of the mold, characterized in that the ion gun which is adjusted by the angle adjusting means in the chamber corresponding to the mold mounted on the table. 삭제delete 삭제delete
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110421792A (en) * 2019-07-30 2019-11-08 苏州三协光电科技有限公司 A kind of angular adjustment seat of electronic product casing injection mold
KR102105868B1 (en) * 2018-10-24 2020-04-29 가부시키가이샤 알박 Cathode device and sputtering device
CN117817399A (en) * 2024-03-06 2024-04-05 江苏诚功阀门科技有限公司 Adjustable fixture for machining hydrogen ball valve

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JPH1060641A (en) 1996-08-12 1998-03-03 Toyama Pref Gov Inclined target type magnetron sputtering device
JPH10121237A (en) * 1996-10-11 1998-05-12 Sony Corp Sputtering device
JP2004307882A (en) 2003-04-02 2004-11-04 Ulvac Japan Ltd Sputtering cathode and sputtering apparatus

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1060641A (en) 1996-08-12 1998-03-03 Toyama Pref Gov Inclined target type magnetron sputtering device
JPH10121237A (en) * 1996-10-11 1998-05-12 Sony Corp Sputtering device
JP2004307882A (en) 2003-04-02 2004-11-04 Ulvac Japan Ltd Sputtering cathode and sputtering apparatus

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102105868B1 (en) * 2018-10-24 2020-04-29 가부시키가이샤 알박 Cathode device and sputtering device
CN110421792A (en) * 2019-07-30 2019-11-08 苏州三协光电科技有限公司 A kind of angular adjustment seat of electronic product casing injection mold
CN117817399A (en) * 2024-03-06 2024-04-05 江苏诚功阀门科技有限公司 Adjustable fixture for machining hydrogen ball valve
CN117817399B (en) * 2024-03-06 2024-05-10 江苏诚功阀门科技有限公司 Adjustable fixture for machining hydrogen ball valve

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