KR100810565B1 - Apparatus for growing silicon single crystal ingot - Google Patents

Abstract

Disclosed are a silicon single crystal ingot growth apparatus and a defect control method for a silicon single crystal ingot. The disclosed silicon single crystal ingot growth apparatus comprises: a silicon single crystal ingot growth apparatus for growing a silicon single crystal ingot by a Czochralski method, comprising: a chamber; A crucible installed inside the chamber and containing a silicon melt; A heater installed on an outer circumferential surface of the crucible to heat the crucible; A graphite ring surrounding the silicon single crystal ingot and blocking heat radiated from the silicon single crystal ingot, and the graphite ring disposed at a crystal defect generation region to separate the COP formation section and OISF formation section generated during the growth of the silicon single crystal ingot; It is characterized by that.

According to the present invention, the graphite ring is installed so that the lower space is insulated so that the temperature range of COP and OISF defects, which are the major defects generated in crystal growth, is separated to have different cooling rates to control the size and density of the desired defects. There is an advantage to this.

COP, OISF, Graphite Rings

Description

Silicon single crystal ingot growth apparatus and defect control method for silicon single crystal ingot {APPARATUS FOR GROWING SILICON SINGLE CRYSTAL INGOT}

BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic view for explaining a defect formation hole in a general crystal.

Figure 2 is a schematic view showing the configuration of a silicon single crystal ingot growth apparatus according to the prior art.

Figure 3 is a schematic view showing the configuration of a silicon single crystal ingot growth apparatus according to the present invention.

4 is a graph showing a comparison of the temperatures of the crystals in the apparatus of FIGS. 2 and 3.

FIG. 5 is a graph showing a comparison of the cooling rates of the crystals in the apparatus of FIGS. 2 and 3. FIG.

FIG. 6 is a schematic view for explaining a factor for determining defect control in a silicon single crystal ingot growth apparatus according to the present invention; FIG.

<Description of the symbols for the main parts of the drawings>

31. Crucible

32. Silicone Melt

33. Silicon Monocrystalline Ingot

34. Crucible Support

35. Rotating shaft

36. Heater

37. Graphite Ring

The present invention relates to a silicon single crystal ingot growth apparatus, and more particularly, to have a different cooling rate depending on a defect formation section that greatly affects the crystal characteristics in high-speed crystal growth, and thus the desired size and density. The present invention relates to a silicon single crystal ingot growth apparatus for obtaining a defect with

The Czochralski (CZ) method is a typical method for manufacturing a single crystal ingot for a silicon wafer used as an electronic component material such as a semiconductor. This method is a method of growing a crystal by soaking a single crystal seed crystal in molten silicon and slowly pulling it. It is generally divided into several process steps.

When growing single crystals according to the Czochralski method described above, heat generated from a heater installed outside the crucible is transferred to the silicon melt, and the temperature of the melt is higher as it moves away from the ingot. The thermal shock received when reaching a relatively low temperature ingot from the hot melt of ethylene adversely affects crystal growth.

In the high-speed crystal growth process using the Czochralski method, it is difficult to obtain low defect crystals, so that defects occur. It is important to control the defects generated at the desired shape.

However, COP (Crystal Originate Particle) and Oxygen Induced Stacking Fault (OISF) nuclei, which are the major defects that occur in crystal growth, have a similar cooling rate in forming defects because their temperature ranges are continuously formed.

1 shows a defect formation section inside a silicon single crystal ingot grown by a silicon single crystal ingot growth apparatus.

Referring to FIG. 1, as the silicon single crystal ingot 23 grows in the center of the crucible 21 containing the silicon melt 22, the COP formation section T1 and the OISF formation section T2 have a cooling rate of G1 and G2, respectively. do.

At this time, if the defect formation sections T1 and T2 pass at a high cooling rate, a defect having a high density of a small size is formed, and a defect having a low density of a large size is formed if a defect is passed at a low cooling rate. Since this is a defect that greatly affects the characteristics of the semiconductor, it is necessary to appropriately control the defect.

2 is a conventional silicon single crystal ingot growth apparatus, by appropriately blocking the heat of the heater 25 using a heat shield 24 made of graphite, thereby forming the above-described COP formation section A and OISF. It shows the case where the cooling rate of the formation section (B) is similarly controlled.

However, since the COP formation section (A) and the OISF formation section (B) are adjacent to each other, a new device for separating the cooling rates of the two sections is required.

The present invention has been made to solve the above problems, in the COP formation section and OISF formation section, which is a defect formation section that greatly affects the crystal characteristics in high-speed crystal growth by installing a graphite ring to separate the defect section of the crystal. It is an object of the present invention to provide a silicon single crystal ingot growth apparatus capable of obtaining defects having desired sizes and densities by having different cooling rates.

Silicon single crystal ingot growth apparatus of the present invention for achieving the above object, the silicon single crystal ingot growth apparatus for growing a silicon single crystal ingot by Czochralski method, the chamber; A crucible installed inside the chamber and containing a silicon melt; A heater installed on an outer circumferential surface of the crucible to heat the crucible; A graphite ring surrounding the silicon single crystal ingot and blocking heat radiated from the silicon single crystal ingot, and the graphite ring disposed at a crystal defect generation region to separate the COP formation section and OISF formation section generated during the growth of the silicon single crystal ingot; It is characterized by that.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

Figure 3 is a schematic diagram showing the configuration of a silicon single crystal ingot growth apparatus according to the present invention.

Referring to the drawings, the silicon single crystal ingot growth apparatus according to the present invention includes a chamber (not shown), and the silicon single crystal ingot (IG) 33 grows inside the chamber.

In the chamber, a crucible 31 of quartz containing a silicon melt (SM) 32 is installed, and a crucible support 34 made of graphite surrounds the crucible 31 outside the crucible 31. do.

The crucible support 34 is fixedly installed on the rotary shaft 35, and the rotary shaft 35 is rotated by a driving means (not shown) to raise the crucible 31 while rotating so that the solid-liquid interface has the same height. Keep it. The crucible support 34 is also surrounded by a cylindrical heater 36 at predetermined intervals, which is surrounded by a thermos (not shown).

The heater 36 melts a high-purity polycrystalline silicon mass loaded in the crucible 31 into a silicon melt 32, which prevents the heat emitted from the heater 36 from spreading toward the wall of the chamber. To improve thermal efficiency.

In addition, an upper portion of the chamber is provided with an pulling means (not shown) for winding up and pulling the cable, and the silicon single crystal ingot 33 is brought into contact with the silicon melt 32 in the crucible 31 at the bottom of the cable. Seed crystals are grown.

The pulling means rotates while the cable is stretched while the silicon single crystal ingot 33 is grown, and the silicon single crystal ingot 33 is the crucible 31 about the same axis as the rotation axis 35 of the crucible 31. Raise it while rotating in the opposite direction of rotation.

In order to smoothly grow the silicon single crystal ingot 33, an inert gas such as argon (Ar), neon (Ne), and nitrogen (N) is introduced into the upper portion of the chamber, and the used inert gas is discharged through the lower portion of the chamber. I use a lot of methods.

In addition, a graphite ring 37 is provided between the silicon single crystal ingot 33 and the crucible 31 as a heat shield to surround the silicon single crystal ingot 33.

The graphite ring 37 was developed in the process of designing various hot zones in order to reduce the deviation of the vertical temperature gradient in the crystal radial direction according to the trend that the wafer is required to have a homogeneous property in plane. It blocks the heat radiated from the silicon single crystal ingot 33 and serves to slow down the cooling rate at the outer periphery of the silicon single crystal ingot 33.

Also, as shown in FIG. 3, the graphite ring 37 separates the COP formation section (C) and the OISF formation section (D) generated when the silicon single crystal ingot 33 is grown. It is installed in the crystal defect generation area position.

The graphite ring 37 is installed horizontally at a predetermined interval from the silicon single crystal ingot 33 so that the lower space of the graphite ring 37 is insulated, as shown in FIG. 6 to be described later, left and right lengths And the vertical position is adjusted so that crystal defect control is possible.

The crystal defect generation region in which the graphite ring 37 is installed is 900 to 1120 ° C., and the graphite ring 37 is provided at a distance of about 1 cm from the silicon single crystal ingot 33. That is, between the inner circumferential surface of the graphite ring 37 and the outer circumferential surface of the silicon single crystal ingot 33 are spaced about 1 cm apart. However, the separation distance does not limit the present invention, and if the lower space of the graphite ring 37 is insulated, the separation distance is not limited as long as 1 cm or more.

Referring to the operation of the silicon single crystal ingot growth apparatus according to the present invention having the configuration as described above is as follows.

In the high-speed crystal growth process by the Czochralski method, it is difficult to obtain low defect crystals and defects are generated. It is important to control the defects generated at the desired shape.

However, as described above, COP and OISF nuclei, which are the major defects generated in crystal growth, are continuously formed in temperature zones, and thus have similar cooling rates in defect formation.

Therefore, the silicon single crystal ingot growth apparatus according to the present invention is to control the size and density of the desired defect by separating the above two formation temperature period of the defect to have a different cooling rate.

This will be described in more detail.

Referring to FIG. 3 again, by separating the COP forming section (C) and the OISF forming section (D) by using the graphite ring 37 to block heat transfer from the graphite ring 37 to the bottom upwards, the graphite ring 37 By insulating the lower space, the COP formation section (C) is gradually cooled to control a large size and low density, while the OISF formation section (D) is rapidly cooled to control OISF not to be produced or to have a very small size. .

To this end, the graphite ring 37 is horizontally installed at a predetermined interval from the silicon single crystal ingot 33, and the graphite ring 37 is installed in the crystal defect generation region (900 to 1120 ° C), In particular, the interval between the graphite ring 37 and the silicon single crystal ingot 33 is installed so as to be spaced about 1 cm apart.

In order to clarify this more clearly, FIG. 4 shows a graph comparing the crystal temperature in the apparatus according to the prior art (see FIG. 2) and the silicon single crystal ingot growth apparatus (FIG. 3) according to the present invention.

4, it can be seen that the temperature of the crystal in the device according to the prior art and the device according to the present invention shows a significant difference, and the crystal of the device of the present invention gradually cools to 30 cm of the crystal. .

5 shows a graph comparing the cooling rates of each of the two crystals in the two devices described above.

As shown in Figure 5, it can be seen that the crystal of the apparatus according to the present invention has a low cooling rate in the COP forming section (C), while the cooling rate of the OISF forming section (D) is considerably fast. Therefore, it can be seen that by using the apparatus according to the present invention, a desired defect can be obtained by appropriately distinguishing the COP formation section (C) and the OISF formation section (D) in high-speed Czochralski single crystal growth.

6 shows two factors that determine this defect control. In other words, these two factors are the position and length of the graphite ring 37, as described above, the position of the graphite ring 37 should be located in the defect generation region (900 to 1120 ℃) of the crystal, and The length of the ring 37 should just be 1 cm or more from a crystal.

Meanwhile, the graphite ring 37 has a shape of a graphite ring 37. As the length of the graphite ring 37 increases, the defect formation section can be effectively separated, but it is preferable to consider the diameter of the crystal. Do.

The present invention can be designed to obtain the desired crystal defects through computer simulation, and furthermore, while controlling the generation of OISF, which adversely affects the yield of semiconductors in high-speed single crystal growth, It can be controlled to have a density.

As described above, the silicon single crystal ingot growth apparatus according to the present invention has the following effects.

By installing the graphite ring so that the lower space is insulated, it is possible to control the size and density of the desired defect by separating the temperature range of the formation of COP and OISF defects, which are the major defects in crystal growth, and having different cooling rates. Thus, desired crystal defects can be obtained.

Although the present invention has been described with reference to one embodiment shown in the drawings, this is merely exemplary, and it will be understood by those skilled in the art that various modifications and equivalent embodiments are possible. Therefore, the true scope of protection of the present invention should be defined only by the appended claims.

Claims (13)

In a silicon single crystal ingot growth apparatus for growing a silicon single crystal ingot by the Czochralski method, A chamber; A crucible installed inside the chamber and containing a silicon melt; A heater installed on an outer circumferential surface of the crucible to heat the crucible; And a graphite ring disposed at a crystal defect generation region so as to separate the COP formation section and the OISF formation section generated during the growth of the silicon single crystal ingot. The method of claim 1, The graphite ring, Silicon single crystal ingot growth apparatus, characterized in that disposed in the horizontal to the silicon melt so that the lower space of the graphite ring is insulated. The method of claim 1, The graphite ring is a silicon single crystal ingot growth apparatus, characterized in that the crystal defect control is possible according to the difference between the inner diameter and the outer diameter and the height of the graphite ring is disposed. The method of claim 1, The silicon single crystal ingot growth apparatus, wherein the crystal defect generation region is 900 to 1120 ° C. The method of claim 3, The internal diameter of the graphite ring is a silicon single crystal ingot growth apparatus, characterized in that the diameter of the silicon single crystal ingot + 1cm. In the COP crystal defect and OISF crystal defect control method of silicon single crystal ingot grown by Czochralski method, Arranging a graphite ring that is movable up and down along the growth direction of the silicon single crystal ingot grown from the crucible containing the silicon melt installed inside the chamber and disposed horizontally with respect to the silicon melt, Transfer the crucible with a heater to transfer the temperature distribution when the melt is melted, COP crystal defect and OISF crystal defect control method of the silicon single crystal ingot which moves the graphite ring along the growth direction of the ingot in accordance with the transfer simulation result to control the COP size and density and OSIF generation. The method of claim 6, COP crystal defect and OISF crystal defect control method of the silicon single crystal ingot to control the crystal defect by controlling the difference between the inner diameter and the outer diameter of the graphite ring. The method of claim 6, COP crystal defect and OISF crystal defect control method of the silicon single crystal ingot, characterized in that the graphite ring is disposed in the temperature distribution region 900 ~ 1120 ℃. The method of claim 8, The internal diameter of the graphite ring is the diameter of the silicon single crystal ingot + 1cm COP crystal defect and OISF crystal defect control method of the silicon single crystal ingot. The method of claim 8, A method for controlling COP crystal defects and OISF crystal defects in a silicon single crystal ingot in which the temperature gradient before the crystal growth of the silicon single crystal ingot is 30 cm is gently controlled compared to the temperature gradient after 30 cm growth. The method of claim 10, The method of controlling COP crystal defects and OISF crystal defects in a silicon single crystal ingot, wherein the cooling rate in the COP forming section is low and the cooling rate of the OISF forming section is controlled very fast. The method of claim 11, COP crystal defects and OISF crystal defect control method of the silicon single crystal ingot is disposed on the graphite ring, the COP formation section is disposed above, the OISF formation section is disposed below the graphite ring. The method of claim 12,  COP crystal defect and OISF crystal defect control method of the silicon single crystal ingot having a temperature gradient of the COP formation section of the graphite ring lower than the temperature gradient of the OISF formation section of the graphite ring.

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