KR100798677B1 - Epoxy resin composition for encapsulating semiconductor device and semiconductor device??using the same - Google Patents

Epoxy resin composition for encapsulating semiconductor device and semiconductor device??using the same Download PDF

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KR100798677B1
KR100798677B1 KR1020060139254A KR20060139254A KR100798677B1 KR 100798677 B1 KR100798677 B1 KR 100798677B1 KR 1020060139254 A KR1020060139254 A KR 1020060139254A KR 20060139254 A KR20060139254 A KR 20060139254A KR 100798677 B1 KR100798677 B1 KR 100798677B1
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formula
epoxy resin
weight
resin composition
triazine
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김운용
이병원
유제홍
김경대
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제일모직주식회사
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    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L63/00Compositions of epoxy resins; Compositions of derivatives of epoxy resins
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G18/00Polymeric products of isocyanates or isothiocyanates
    • C08G18/06Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
    • C08G18/08Processes
    • C08G18/10Prepolymer processes involving reaction of isocyanates or isothiocyanates with compounds having active hydrogen in a first reaction step
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/20Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the epoxy compounds used
    • C08G59/32Epoxy compounds containing three or more epoxy groups
    • C08G59/3218Carbocyclic compounds
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/40Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
    • C08G59/62Alcohols or phenols
    • C08G59/621Phenols
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/68Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the catalysts used
    • C08G59/686Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the catalysts used containing nitrogen
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/68Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the catalysts used
    • C08G59/688Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the catalysts used containing phosphorus
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00Use of organic ingredients
    • C08K5/16Nitrogen-containing compounds
    • C08K5/34Heterocyclic compounds having nitrogen in the ring
    • C08K5/3467Heterocyclic compounds having nitrogen in the ring having more than two nitrogen atoms in the ring
    • C08K5/3477Six-membered rings
    • C08K5/3492Triazines
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K7/00Use of ingredients characterised by shape
    • C08K7/16Solid spheres
    • C08K7/18Solid spheres inorganic
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L75/00Compositions of polyureas or polyurethanes; Compositions of derivatives of such polymers
    • C08L75/04Polyurethanes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52Encapsulations
    • H01L33/56Materials, e.g. epoxy or silicone resin

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  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
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  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Epoxy Resins (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

An epoxy resin composition for packaging a semiconductor device is provided to reduce the problem of separation between the surface of a wafer chip and an epoxy packaging material and to reduce cracking of a pad surface and a chip. An epoxy resin composition comprises 0.1-5 wt% of an isocyanate terminated polyurethane prepolymer represented by the formula 1; 0.1-10.7 wt% of a polyaromatic epoxy resin represented by the formula 2; 0.1-7.3 wt% of a polyaromatic curing agent represented by the formula 4; 0.1-1.5 wt% of a triazine-based resin represented by the formula 6; 0.05-0.5 wt% of a curing accelerator; and 75-95 wt% of an inorganic filler. In the formula 1, R is a hydroxyl group or a methyl group; and n is an integer of 1-10. In the formulae 2 and 4, R1 and R2 are identical or different each other and are a C1-C4 alkyl group; a is an integer of 0-4; and n is an integer of 1-7.

Description

반도체 소자 밀봉용 에폭시 수지 조성물 및 이를 이용한 반도체 소자{Epoxy resin composition for encapsulating semiconductor device and semiconductor device using the same}Epoxy resin composition for encapsulating semiconductor device and semiconductor device using the same}

본 발명은 반도체 소자 밀봉용 수지 조성물에 관한 것으로, 보다 상세하게는 할로겐계 난연제나 인계 난연제를 사용하지 않고도 난연성의 확보가 가능하며, 패드 면과 칩에 발생되는 크랙 문제를 개선하고, 에폭시봉지재와 표면 사이에 발생하는 박리를 감소시킴으로써 고신뢰성을 유지하는 반도체 소자 밀봉용 에폭시수지 조성물에 관한 것이다.The present invention relates to a resin composition for sealing semiconductor elements, and more particularly, it is possible to secure flame retardancy without using a halogen-based flame retardant or a phosphorus-based flame retardant, to improve a crack problem occurring on a pad surface and a chip, and an epoxy encapsulant. The present invention relates to an epoxy resin composition for sealing semiconductor elements which maintains high reliability by reducing the peeling occurring between the surface and the surface.

일반적으로 반도체 봉지재용 에폭시 수지를 제조함에 있어서 난연성이 필요하며 대부분의 반도체업체에서 UL-94 V-0를 난연성으로 요구하고 있다. 이러한 난연성을 확보하기 위해 난연제를 사용하여 반도체 봉지재용 에폭시 수지를 제조하고 있으며 주로 브롬에폭시와 삼산화안티몬을 반도체 봉지재용 에폭시 수지 제조시 사용하여 난연성을 확보하고 있다.  그러나 이러한 할로겐계 난연제를 사용하여 난연성을 확보한 반도체 봉지재용 에폭시 수지의 경우 소각시나 화재시에 다이옥 신(dioxin)이나 다이퓨란(difuran)등의 유독성 발암물질이 발생되는 것으로 알려져 있다. 또한 할로겐계 난연제의 경우 연소시 발생하는 HBr 및 HCl등의 가스로 인해 인체에 유독하며 반도체 칩(chip)이나 와이어(wire) 및 리드 프레임(lead frame)의 부식(corrosion)을 발생시키는 주요한 원인으로 작용하는 점 등의 문제가 있다. 이에 대한 대책으로서 포스파젠(phosphazene)이나 인산에스테르와 같은 인계난연제 및 질소원소 함유 수지와 같은 신규난연제가 검토되고 있으나 질소원소 함유 수지의 경우 난연성이 부족하고 인계난연제의 경우 수분과 결합하여 생성되는 인산 및 폴리인산이 반도체 후공정에서 패드면 및 칩에 크랙을 발생시켜 반도체의 신뢰성을 떨어뜨리는 문제를 야기하기도 한다.In general, flame retardancy is required in manufacturing an epoxy resin for semiconductor encapsulant, and most semiconductor companies require UL-94 V-0 as flame retardant. In order to secure such flame retardancy, a flame retardant is used to manufacture an epoxy resin for a semiconductor encapsulant, and bromine epoxy and antimony trioxide are mainly used to prepare an epoxy resin for a semiconductor encapsulant to ensure flame retardancy. However, in the case of an epoxy resin for a semiconductor encapsulant having flame retardancy by using a halogen-based flame retardant, it is known that toxic carcinogens such as dioxin or difuran are generated during incineration or fire. In addition, halogen-based flame retardants are toxic to humans due to gases such as HBr and HCl generated during combustion, and are the main cause of corrosion of semiconductor chips, wires, and lead frames. There is a problem such as working. As a countermeasure, new flame retardants such as phosphorus-based flame retardants such as phosphazene and phosphate esters and nitrogen-containing resins have been considered. However, in the case of nitrogen-containing resins, the flame retardancy is insufficient. In addition, polyphosphoric acid may cause cracks on the pad surface and the chip in a post-semiconductor process, thereby causing a problem of deteriorating the reliability of the semiconductor.

 

상기와 같은 문제를 해결하기 위한 본 발명의 목적은 이소시아네이트 터미네이티드 폴리우레탄 프리폴리머를 적용함으로써 열 충격, 특히 반도체 후 공정에서 패드면 및 칩에 발생하는 크랙 문제가 개선된 반도체 소자 밀봉용 에폭시 수지 조성물을 제공하는 것이다.An object of the present invention for solving the above problems is to apply an isocyanate terminated polyurethane prepolymer, the epoxy resin composition for sealing a semiconductor device that is improved thermal shock, especially crack problems occurring on the pad surface and chip in the post-semiconductor process To provide.

본 발명의 다른 목적은 접착력 증가제로 말단기가 최소 1개이상의 머캅토기를 포함한 트리 아진계 수지를 사용함으로써 반도체 소자 봉지 공정에서 웨이퍼 칩 표면과 에폭시 봉지재 사이에 발생하는 박리 문제를 개선하여 고신뢰성을 제공하는 반도체 소자 밀봉용 에폭시 수지 조성물을 제공하는 데 있다. Another object of the present invention is to improve the peeling problem between the wafer chip surface and the epoxy encapsulant in the semiconductor device encapsulation process by using a triazine-based resin containing at least one mercapto group at the terminal end as an adhesion increasing agent. It is providing the epoxy resin composition for sealing semiconductor elements to provide.

본 발명의 또 다른 목적은 인체나 기기에 유해한 할로겐계 난연제 및 인계  난연제를 사용하지 않고 다방향족 에폭시 수지와 다방향족 경화제를 사용하여 난연성을 확보한 반도체 소자 밀봉용 에폭시 수지 조성물을 제공하는 데 있다.It is still another object of the present invention to provide an epoxy resin composition for sealing semiconductor devices, which is flame retardant by using a multi-aromatic epoxy resin and a multi-aromatic curing agent without using a halogen-based flame retardant and a phosphorus-based flame retardant, which are harmful to a human body or a device.

 

상기와 같은 목적을 달성하기 위한 본 발명 반도체 소자 밀봉용 에폭시 수지는, 하기 화학식 1로 표시되는 이소시아네이트 터미네이티드 폴리우레탄 프리폴리머 0.1 ~ 5 중량%, 하기 화학식 2로 표시되는 다방향족 에폭시 수지 0.1 ~ 10.7 중량%, 하기 화학식 4로 표시되는 다방향족 경화제 0.1 ~ 7.3  중량%, 하기 화학식 6으로 표시되는 트리아진계 수지 0.01 ~ 1.5  중량%, 경화촉진제 0.05 ~ 0.5  중량%, 및 무기충전제 75 ~ 95  중량%를 포함하는 것을 특징으로 한다.The epoxy resin for sealing a semiconductor device of the present invention for achieving the above object is 0.1 to 5% by weight of isocyanate terminated polyurethane prepolymer represented by the following general formula (1), 0.1 to 10.7 polyaromatic epoxy resin represented by the following general formula (2) 0.1 wt% to 7.3 wt% of the polyaromatic curing agent represented by the following formula (4), 0.01 wt% to 1.5 wt% of the triazine resin represented by the following Formula (6), 0.05 wt% to 0.5 wt% of the curing accelerator, and 75 wt% to 95 wt% of the inorganic filler. It is characterized by including.

[화학식 1][Formula 1]

Figure 112006098642605-pat00001
Figure 112006098642605-pat00001

(상기 식에서 R은 수소원자 또는 메틸기이고, n은 1 내지 10의 정수이다.)(Wherein R is a hydrogen atom or a methyl group and n is an integer from 1 to 10).

 

[화학식 2] [Formula 2]

Figure 112006098642605-pat00002
Figure 112006098642605-pat00002

(상기 식에서 R1,R2는 탄소수 1∼4의 알킬기로, 서로 동일하고도 달라도 (In the formula, R1, R2 is an alkyl group having 1 to 4 carbon atoms.

좋다. a는 0∼4의 정수, n은 1-7 사이의 수이다.)good. a is an integer of 0 to 4 and n is a number between 1 and 7)

 

[화학식 4][Formula 4]

Figure 112006098642605-pat00003
Figure 112006098642605-pat00003

(상기 식에서 R1,R2는 탄소수 1∼4의 알킬기로, 서로 동일하고도 달라도 (In the formula, R1, R2 is an alkyl group having 1 to 4 carbon atoms.

좋다. a는 0∼4의 정수, n은 1-7 사이의 수이다.)good. a is an integer of 0 to 4 and n is a number between 1 and 7)

 

[화학식 6][Formula 6]

Figure 112006098642605-pat00004
Figure 112006098642605-pat00004

(상기 식에서, R은 각각 같거나 다른 머캅토기 또는 아킬기, 아민기이다.)(Wherein R is the same or different mercapto group, alkyl group, or amine group, respectively.)

또한, 상기 트리아진계 수지는 2-디부틸아미노-4,6-디머캅토-S-트리아진, 2-디부틸아미노-머캅토-트리아진, 2-아닐리노-4,6-디머캅토-S-트리아진, 2,4,6-트리머컵토-S-트리아진으로 이루어진 군에서 선택된 하나 이상인 것을 특징으로 한다.In addition, the triazine resin is 2-dibutylamino-4,6-dimercapto-S-triazine, 2-dibutylamino-mercapto-triazine, 2-anilino-4,6-dimercapto-S It is characterized in that at least one selected from the group consisting of -triazine, 2,4,6-trimercupto-S-triazine.

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또한, 상기 경화촉진제는 트리아진 이소시아네이트 이미다졸 화합물, 트리페닐포스핀 어덕트로서 테트라페닐포스포니움 테트라페닐보레이트, 트리페닐포스핀 테트라페닐보레이트, 테트라페닐보론염 등과 벤질디메틸아민, 트리에탄올아민, 트리에틸렌디아민, 디메틸아미노에탄올, 트리(디메틸아미노메틸)페놀 등의 아민 화합물과, 트리페닐포스핀, 디페닐포스핀, 페닐포스핀 등의 포스핀계 화합물에서 선택되는 1종 이상인 것을 특징으로 한다.In addition, the curing accelerator is a triazine isocyanate imidazole compound, tetraphenylphosphonium tetraphenylborate, triphenylphosphine tetraphenylborate, tetraphenylboron salt and the like as a triphenylphosphine adduct, benzyldimethylamine, triethanolamine, tri It is characterized by being at least one selected from amine compounds such as ethylenediamine, dimethylaminoethanol, tri (dimethylaminomethyl) phenol and phosphine compounds such as triphenylphosphine, diphenylphosphine and phenylphosphine.

또한, 상기 조성물은 경화촉진제로서 이소시아네이트형 잠재성 경화촉매를 사용하고, 추가로 아민형 보조촉매 또는 포스핀형 보조촉매를 사용하는 것을 특징으로 한다.In addition, the composition is characterized by using a isocyanate-type latent curing catalyst as a curing accelerator, and further using an amine type cocatalyst or a phosphine type cocatalyst.

또한, 상기 무기 충전제는 평균입자경이 0.1~2㎛의 구상실리카를 조성물중의 무기 충전제 전체의 3~10 중량%, 평균입자경이3~9㎛의 구상실리카를 조성물중의 무기 충전제 전체의 5~20 중량%, 평균입자경이 10~20㎛의 구상실리카를 조성물중의 무기 충전제 전체의 70~92 중량 %의 비율로 혼용 사용하는 것을 특징으로 한다.In addition, the inorganic filler may have a spherical silica having a mean particle size of 0.1 to 2 μm, and 3 to 10 wt% of the whole inorganic filler in the composition, and a spherical silica having a mean particle size of 3 to 9 μm. It is characterized by using spherical silica of 20 weight% and an average particle diameter of 10-20 micrometers in mixture of 70 to 92 weight% of the whole inorganic filler in a composition.

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또한, 상기 기재의 반도체 소자 밀봉용 에폭시 수지 조성물을 헨셀믹서 또는 뢰디게 믹서를 이용하여 혼합한 뒤, 롤밀 또는 니이더로 용융혼련한 후, 냉각, 분쇄과정을 거쳐 얻은 최종 분말 제품으로 밀봉한 반도체 소자를 제공한다.In addition, the above-mentioned epoxy resin composition for semiconductor element sealing is mixed using a Henschel mixer or a solid mixer, melt-kneaded with a roll mill or a kneader, and then sealed with a final powder product obtained through cooling and grinding. Provided is an element.

 

이하, 본 발명에 관하여 보다 상세히 설명한다.Hereinafter, the present invention will be described in more detail.

 

본 발명의 반도체 소자 밀봉용 에폭시 수지 조성물은 기본 수지로 다방향족 에폭시 수지와 다방향족 경화제를 사용하고, 이소시아네이트 터미네이티드 폴리우레탄 프리폴리머를 도입하는 것을 기본 구성으로 한다.The epoxy resin composition for semiconductor element sealing of this invention uses a polyaromatic epoxy resin and a polyaromatic hardening | curing agent as a basic resin, and introduces an isocyanate terminated polyurethane prepolymer as a basic structure.

이소시아네이트 터미네이티드 폴리우레탄 프리폴리머는 하기의 화학식 1로 표시되며, 웨이퍼 칩 면과 봉지재료간 접착특성 및 240℃ 내지 265℃의 고온 솔더 공정에서 패키지의 내크랙성을 향상시키는 역할을 한다.The isocyanate terminated polyurethane prepolymer is represented by the following Chemical Formula 1, and serves to improve the adhesiveness between the wafer chip surface and the encapsulation material and crack resistance of the package in a high temperature solder process of 240 ° C to 265 ° C.

 

[화학식 1][Formula 1]

Figure 112006098642605-pat00005
Figure 112006098642605-pat00005

(상기 식에서 R은 수소원자 또는 메틸기이고, n은 1 내지 10의 정수이다.)(Wherein R is a hydrogen atom or a methyl group and n is an integer from 1 to 10).

 

상기 이소시아네이트 터미네이티드 폴리우레탄 프리폴리머의 중량 평균 분자량은 바람직하게는 1,000 ~ 10,000, 보다 바람직하게는 1,150 ~ 4,600이다.The weight average molecular weight of the isocyanate terminated polyurethane prepolymer is preferably 1,000 to 10,000, more preferably 1,150 to 4,600.

상기 이소시아네이트 터미네이티드 폴리우레탄 프리폴리머의 함량은 전체 조성물 대비 0.1∼5 중량%의 범위인 것이 바람직하며, 더욱 바람직하게는 0.2~2 중량%이다. 상기 함량이 0.1 중량% 미만인 경우 충분한 물성 개질 효과를 달성하기 어려울 수 있고, 5 중량%를 초과하는 경우 균일한 가교 반응도 확보 및 부착력 제공이 어려운 문제점이 발생할 수 있기 때문이다. The content of the isocyanate terminated polyurethane prepolymer is preferably in the range of 0.1 to 5% by weight relative to the total composition, more preferably 0.2 to 2% by weight. If the content is less than 0.1% by weight it may be difficult to achieve a sufficient physical property modification effect, if it exceeds 5% by weight it may be difficult to secure a uniform crosslinking reaction and to provide adhesion.

 

본 발명의 조성물에 사용되는 다방향족 에폭시 수지는 하기 화학식 2으로 표시되는 구조를 갖는다.The polyaromatic epoxy resin used in the composition of the present invention has a structure represented by the following formula (2).

[화학식 2][Formula 2]

Figure 112006098642605-pat00006
Figure 112006098642605-pat00006

(상기 식에서 R1, R2는 탄소수 1∼4의 알킬기로, 서로 동일할 수도 있고, 다를 수도 있다. a는 0∼4의 정수, n은 1-7 사이의 수이다.)(Wherein R1 and R2 are alkyl groups having 1 to 4 carbon atoms, which may be the same as or different from each other. A is an integer of 0 to 4 and n is a number between 1 and 7)

 

본 발명에 사용된 에폭시수지는 화학식 2의 다방향족 에폭시 수지와, 하기 화학식 3의 비페닐형, 오르소 크래졸 노볼락형, 비스페놀 F형, 비스페놀 A형, 디시클로펜타디엔형으로 이루어진 군 중에서 단독으로 또는 두가지 이상을 혼합한 것을 포함하여 이루어져 있다. 화학식 2의 다방향족 에폭시 수지는 전체 조성물 중의 에폭시 수지를 기준으로 하여 15~75 중량%를 사용한다.  만일 화학식 2의 다방향족 에폭시 수지를 전체 에폭시 수지의 15 중량% 미만 적용시 난연성이 떨어지는 문제가 있으며 75 중량%이상 사용시에는 유동성이 떨어지는 문제가 생기게 되어 반도체소자를 봉지하는 저압 이송성형 공정에서 성형 불량을 발생하게 하여 생산성을 떨어뜨리게 된다.Epoxy resin used in the present invention in the group consisting of a polyaromatic epoxy resin of the formula (2), biphenyl type, ortho-crasol novolak type, bisphenol F type, bisphenol A type, dicyclopentadiene type of the formula (3) It consists of a single or a mixture of two or more. The polyaromatic epoxy resin of the formula (2) is used in the range of 15 to 75% by weight based on the epoxy resin in the total composition. If the polyaromatic epoxy resin of formula (2) is less than 15% by weight of the epoxy resin, there is a problem of poor flame retardancy, and when it is used more than 75% by weight, there is a problem of poor fluidity. To reduce the productivity.

 

[화학식 3][Formula 3]

Figure 112006098642605-pat00007
Figure 112006098642605-pat00007

(상기 식에서 R은 수소원자 또는 탄소수 1~ 4의 알킬기를 나타낸다.)(Wherein R represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms)

 

상기 에폭시 수지의 사용량은 전체 수지 조성물에 대하여 0.7 ~ 14.2 중량%의 범위로 사용하는 것이 바람직하다.It is preferable to use the usage-amount of the said epoxy resin in the range of 0.7-14.2 weight% with respect to the whole resin composition.

 

경화제는 전체 수지 조성물에 대하여 0.6~10.4 중량%의 범위로 사용하는 것이 바람직하다.  본 발명의 조성물에 사용되는 경화제로는 하기의 화학식 4로 표시되는 2개 이상의 수산기를 갖고 수산기 당량이 100∼200인 다방향족 페놀수지를 조성물 중의 페놀수지 전체의 15~70 중량%를 사용한다. 만일 화학식 4의 다방향족 페놀수지를 조성물 중의 페놀수지 전체의 15 중량% 미만 적용시 난연성이 떨어지는 문제가 있으며, 70 중량%이상 사용시에는 유동성이 떨어지는 문제가 발생한다.It is preferable to use a hardening | curing agent in the range of 0.6-10.4 weight% with respect to the whole resin composition. As a curing agent used in the composition of the present invention, a polyaromatic phenol resin having two or more hydroxyl groups represented by the following formula (4) having a hydroxyl equivalent of 100 to 200 is used in an amount of 15 to 70% by weight of the entire phenol resin in the composition. If the multi-aromatic phenolic resin of formula (4) is less than 15% by weight of the entire phenolic resin in the composition, there is a problem that the flame retardancy is poor, when using more than 70% by weight occurs a problem of poor fluidity.

 

[화학식 4][Formula 4]

Figure 112006098642605-pat00008
Figure 112006098642605-pat00008

(상기 식에서 R1,R2는 탄소수 1∼4의 알킬기로, 서로 동일할 수도 있고, 다를 수도 있다. a는 0∼4의 정수, n은 1-7 사이의 수이다.)(In the above formula, R1 and R2 are alkyl groups having 1 to 4 carbon atoms, which may be the same as or different from each other. Xa is an integer of 0 to 4 and n is a number between 1 and 7).

 

이와 함께, 하기 화학식 5의 자일록(Xyloc) 수지와 통상의 페놀 노볼락 수지, 크레졸 노볼락 수지, 디사이클로펜타디엔형으로 이루어진 군으로부터 단독 또는 두가지 이상을 화학식 4의 다방향족 페놀수지와 병용하여 사용한다.Along with this, Xyloc resin of Formula 5, a common phenol novolak resin, cresol novolak resin, dicyclopentadiene type alone or two or more in combination with a polyaromatic phenol resin of Formula 4 use.

 

[화학식 5][Formula 5]

Figure 112006098642605-pat00009
Figure 112006098642605-pat00009

(상기 식에서, R1은 탄소수 1∼4의 알킬기로, a가 2이상일 경우, 서로 동일할 수도 있고 다를 수도 있다. a는 0∼4의 정수이며, n은 1-7 사이의 수이다.)(Wherein, R1 is an alkyl group having 1 to 4 carbon atoms, when a is 2 or more, may be the same or different. A is an integer of 0 to 4, n is a number between 1-7.)

 

본 발명에서 상기 에폭시 수지와 경화제의 당량비는 수산기 당량에 대한 에폭시 당량이 0.9∼1.1사이가 되도록 하는 것이 조성물의 경화도 즉 치수안정성 측면에서 보다 바람직하다. In the present invention, it is more preferable that the equivalent ratio of the epoxy resin and the curing agent is such that the epoxy equivalent to the hydroxyl equivalent is between 0.9 and 1.1 in terms of the degree of curing of the composition, that is, the dimensional stability.

 

또한 본 발명에 따른 에폭시 수지 조성물에 적용한 접착력 증가제로 말단기가 최소 1개이상의 머캅토기를 포함한 트리 아진계 수지를 포함한다. 본 특허에서 적용된 상세한 예로서는 2-디부틸아미노-4,6-디머캅토-S-트리아진, 2-디부틸아미노-머캅토-트리아진, 2-아닐리노-4,6-디머캅토-S-트리아진, 2,4,6-트리머컵토-S-트리아진으로서 이들의 혼합물을 사용할 수 있으며, 트리아진 기본 골격에 말단기 최소 1개 이상을 가진 하기 화학식 6의 화합물을 단독으로 또는 조합하여 사용이 가능하였다. 상기 트리아진계 수지는 전체 에폭시 수지 조성물에 대하여 0.01~1.5중량%로 사용하는 것이 바람직하다.In addition, the adhesive force increasing agent applied to the epoxy resin composition according to the present invention includes a triazine-based resin containing at least one mercapto group terminal group. 예 로서 Detailed examples applied in this patent include 2-dibutylamino-4,6-dimercapto-S-triazine, 2-dibutylamino-mercapto-triazine, 2-anilino-4,6-dimercapto-S- Triazines, 2,4,6-trimercupto-S-triazines can be used as mixtures thereof, and compounds of formula (6) having at least one terminal group in the triazine basic skeleton alone or in combination This was possible. It is preferable to use the said triazine resin at 0.01 to 1.5 weight% with respect to the whole epoxy resin composition.

[화학식 6][Formula 6]

Figure 112006098642605-pat00010
Figure 112006098642605-pat00010

(상기 식에서, R은 각각 같거나 다른 머캅토기 또는 아킬기, 아민기이다.)(Wherein R is the same or different mercapto group, alkyl group, or amine group, respectively.)

 

한편, 본 발명에서 경화촉진제로는 통상의 트리페닐포스핀을 사용하거나, 또는 경화속도의 조절을 위해 이소시아네이트형 잠재성 경화촉매를 사용할 수도 있다. 상기 경화촉진제의 구체적인 예로서 트리아진 이소시아네이트 이미다졸 화합물, 트리페닐포스핀 어덕트로서 테트라페닐포스포니움 테트라페닐보레이트, 트리페닐포스핀 테트라페닐보레이트, 테트라페닐보론염 등과 벤질디메틸아민, 트리에탄올아민, 트리에틸렌디아민, 디메틸아미노에탄올, 트리(디메틸아미노메틸)페놀 등의 아민 화합물과, 트리페닐포스핀, 디페닐포스핀, 페닐포스핀 등의 포스핀계 화합물 등을 들 수 있다. Meanwhile, in the present invention, as a curing accelerator, a conventional triphenylphosphine may be used, or an isocyanate type latent curing catalyst may be used for controlling the curing rate. Specific examples of the curing accelerators include triazine isocyanate imidazole compounds, tetraphenylphosphonium tetraphenylborate, triphenylphosphine tetraphenylborate, tetraphenylboron salt and the like as benzyldimethylamine, triethanolamine, Amine compounds such as triethylenediamine, dimethylaminoethanol and tri (dimethylaminomethyl) phenol, and phosphine compounds such as triphenylphosphine, diphenylphosphine and phenylphosphine;

상기 경화촉진제의 함량은 전체 에폭시 수지 조성물에 대하여 0.05∼0.5중량%의 범위로 사용하는 것이 바람직하다.  The content of the curing accelerator is preferably used in the range of 0.05 to 0.5% by weight based on the total epoxy resin composition.

본 발명에서 무기충전제로는 평균입자경이 0.1∼35㎛이며, 이때 45~75㎛ 사이의 입자경의 함량이 0.1~50 중량%로 제어된 용융 또는 합성 실리카를 사용할 수 있으나, 바람직하게는 평균입자경이 0.1~2㎛의 구상실리카 를 조성물중의 무기 충전제 전체의 3~10 중량%, 평균입자경이 3~9㎛의 구상실리카를 조성물중의 무기 충전제 전체의 5~20 중량%, 평균입자경이 10~20㎛의 구상실리카를 조성물중의 무기 충전제 전체의 30~92 중량 %의 비율로 혼용 사용하는 것이 좋다. 이때 조성물 중의 무기충전제 전체의 양은 75~95 중량%로 적용할 수 있으나 바람직하게는 75~90 중량% 적용하는 것이 좋다. 무기충전제의 양이 75 중량% 미만인 경우에는 충분한 강도와 저열팽창화를 실현할 수 없으며 또한 수분의 침투가 용이해져 신뢰성 특성에 치명적이고 90 중량%를 초과하면 유동특성의 저하로 인해 성형성이 나빠질 우려가 있기 때문이다. In the present invention, the inorganic filler may have an average particle diameter of 0.1 to 35 μm, and fused or synthetic silica in which the content of the particle diameter between 45 to 75 μm is controlled to 0.1 to 50 wt% may be used. 3 to 10% by weight of the whole inorganic filler in the composition of 0.1-2 μm spherical silica, 5 to 20% by weight of the total inorganic filler in the composition of 3-9 μm spherical silica, 10 to 10 20 micrometers of spherical silica is good to mix and use at the ratio of 30 to 92 weight% of the whole inorganic filler in a composition. At this time, the total amount of the inorganic filler in the composition 수 may be applied to 75 to 95% by weight, but preferably 75 to 90% by weight. If the amount of the inorganic filler is less than 75% by weight, sufficient strength and low thermal expansion cannot be realized, and the penetration of moisture is easy, which is fatal to the reliability characteristics. Because there is.

본 발명의 수지 조성물에는 본 발명의 목적을 해하지 않는 범위 내에서 필요에 따라 고급 지방산, 천연지방산, 파라핀계 왁스, 에스테르계 왁스, 변성실리콘 오일 등의 이형제, 카본블랙, 유·무기염료 등의 착색제, 가교증진제, 난연보조제, 레벨링제 등을 사용할 수 있다.The resin composition of the present invention may be a release agent such as higher fatty acids, natural fatty acids, paraffin waxes, ester waxes, modified silicone oils, and coloring agents such as carbon black and organic / inorganic dyes, as necessary, within the scope of not impairing the object of the present invention. , Crosslinking enhancers, flame retardant aids, leveling agents and the like can be used.

 

본 발명의 에폭시 수지 조성물은 소정의 배합량을 헨셀믹서나 뢰디게 믹서를 이용하여 균일하게 분쇄하여 혼합한 뒤 1차 분말 제조물을 얻은 후 롤밀이나 니이 더를 이용 100℃에서 약 10분 이내로 용융 혼련한 뒤 냉각, 분쇄과정을 거쳐 제조될 수 있다.The epoxy resin composition of the present invention is uniformly pulverized by mixing a predetermined amount using a Henschel mixer or Lodige mixer, and after obtaining a primary powder product, melt kneading at about 100 minutes using a roll mill or a kneader within about 10 minutes. After cooling and grinding can be prepared.

 

이하의 실시예를 통하여 본 발명을 보다 상세하게 설명하고자 하나 하기의 실시예는 설명의 목적을 위한 것이다.One embodiment of the present invention will be described in more detail with reference to the following examples.

 

실시예 및 비교예Examples and Comparative Examples

상기에서 언급된 구성성분들을 이용하여 표 1에 나타낸 바와 같은 배합비에 따라서 실시예 1∼4 및 비교예 1∼3를 배합하고 헨셀믹서 또는 뢰디게 믹서를 이용하여 균일하게 분쇄, 혼합하여 1차 분말 제조물을 수득한 후, 롤밀을 이용하여 100℃에서 10분 이내로 용융 혼련한 뒤 냉각, 분쇄과정을 거쳐 에폭시 봉지 조성물을 제조하였다.According to the mixing ratio as shown in Table 1 by using the above-mentioned components, Examples 1 to 4 and Comparative Examples 1 to 3 were mixed and uniformly pulverized and mixed using a Henschel mixer or a Rödige mixer to form a primary powder. After obtaining the preparation, melt kneading at 100 ° C. within 10 minutes using a roll mill, and then cooled and pulverized to prepare an epoxy encapsulation composition.

구성성분(단위;중량%)Ingredient (Unit; Weight%) 실시예 1Example 1 실시예 2Example 2 실시예 3Example 3 실시예 4Example 4 비교예 1Comparative Example 1 비교예 2Comparative Example 2 비교예 3Comparative Example 3 에폭시Epoxy 다방향성 에폭시수지Multi-directional Epoxy Resin 6.86.8 5.85.8 3.63.6 3.83.8 7.47.4 6.256.25 3.83.8 비페닐형Biphenyl type 4.74.7 3.63.6 2.32.3 2.72.7 5.15.1 3.73.7 2.72.7 경화제Hardener 다방향족 페놀수지Multiaromatic Phenolic Resin 5.75.7 4.14.1 2.82.8 2.92.9 6.46.4 4.64.6 3.23.2 자이록형Zylock 3.43.4 3.13.1 1.91.9 2.02.0 4.74.7 3.23.2 2.12.1 이소시아네이트 터미네이티드 폴리우레탄 프리폴리머 (화학식 1)Isocyanate Terminated Polyurethane Prepolymer (Formula 1) 2.02.0 2.02.0 1.01.0 0.20.2 1.01.0 0.150.15 0.10.1 트리아진계 수지 Triazine resin 0.30.3 0.30.3 0.30.3 0.30.3 0.30.3 -- -- 경화촉진제Curing accelerator 트리페닐포스핀Triphenylphosphine 0.20.2 0.20.2 0.20.2 0.20.2 0.20.2 0.20.2 0.20.2 테트라페닐포스포니움 테트라페닐보레이트Tetraphenylphosphonium tetraphenylborate 0.10.1 0.10.1 0.10.1 0.10.1 0.10.1 0.10.1 0.10.1 무기충전제Inorganic filler 평균입자경 1㎛Average particle size 1㎛ 88 77 88 88 55 77 88 평균입자경 5㎛Average particle size 5㎛ 3030 3232 3535 3434 3030 3333 3737 평균입자경 18㎛Average particle diameter 18㎛ 3838 4242 4444 4545 3939 4141 4242 난연제Flame retardant 브롬화에폭시Brominated Epoxy -- -- -- -- -- -- -- 삼산화안티몬Antimony trioxide -- -- -- -- -- -- -- 커플링제Coupling agent γ-글리시톡시프로필  트리메톡시실란γ-glycithoxypropyl n-trimethoxysilane 0.40.4 0.40.4 0.40.4 0.40.4 0.40.4 0.40.4 0.40.4 착색제coloring agent 카본블랙Carbon black 0.20.2 0.20.2 0.20.2 0.20.2 0.20.2 0.20.2 0.20.2 왁스Wax 카르나우바왁스Carnauba Wax 0.20.2 0.20.2 0.20.2 0.20.2 0.20.2 0.20.2 0.20.2 합계Sum 100100 100100 100100 100100 100100 100100 100100

 
1) 다방향족 에폭시 수지 : NC-3000, 일본 화약
2) 비페닐형 : YX-4000H, JER
3) 다방향족 페놀수지 : MEH-7851, 메이와
4) 자일록형 : MEH-7800SS, 메이와
5) 트리아진계 수지 : 2-디부틸아미노-4,6-디머캅토-S-트리아진
6) 브롬화에폭시 : Bren-S, 일본 화약 

1) Multi-aromatic epoxy resin: NC-3000, Japanese gunpowder
2) Biphenyl type: YX-4000H, JER
3) Multiaromatic Phenolic Resin: MEH-7851, Meiwa
4) Xylock Type: MEH-7800SS, Meiwa
5) Triazine resin: 2-dibutylamino-4,6-dimercapto-S-triazine
6) Brominated epoxy: Bren-S, Japanese gunpowder

이렇게 하여 얻어진 에폭시 수지 조성물에 대하여 물성 및 신뢰성을 평가하여 이를 표 2 에 나타내었다.The physical properties and the reliability of the epoxy resin composition thus obtained were evaluated and shown in Table 2.

평가항목Evaluation item 실시예 1Example 1 실시예 2Example 2 실시예 3Example 3 실시예 4Example 4 비교예 1Comparative Example 1 비교예 2Comparative Example 2 비교예 3Comparative Example 3 스파이럴 플로우(inch)Spiral Flow (inch) 5757 5151 4848 4141 6060 5454 4646 유리전이 온도(℃)Glass transition temperature (℃) 128128 121121 127127 120120 121121 125125 127127 부착력 (kgf)Adhesion force (kgf) 7878 6969 7272 7676 6969 4242 4040 굴곡강도(kgf/㎟)Flexural Strength (kgf / ㎡) 15.715.7 15.615.6 17.117.1 17.017.0 14.814.8 15.315.3 15.115.1 굴곡탄성율(kgf/㎟)Flexural modulus (kgf / mm2) 16201620 18101810 21802180 22902290 17801780 19301930 24202420 크랙발생수Cracking water IR-reflow 265℃ 후After IR-reflow 265 ℃ 0/1920/192 0/1920/192 0/1920/192 0/1920/192 0/1920/192 0/1920/192 0/1920/192 박리발생수Peeling water PCT 24hr 후 IR-reflow 265℃IR-reflow 265 ℃ after PCT 24hr 0/1920/192 0/1920/192 0/1920/192 0/1920/192 1/1921/192 7/1927/192 5/1925/192 200 cycle200 cycle 0/1920/192 0/1920/192 0/1920/192 0/1920/192 2/1922/192 5/1925/192 0/1920/192 500 cycle500 cycle 0/1920/192 0/1920/192 0/1920/192 0/1920/192 4/1924/192 11/19211/192 6/1926/192

 

[물성 평가방법][Property evaluation method]

㉠ 스파이럴 플로우(Spiral Flow)럴 Spiral Flow

EMMI규격을 기준으로 금형을 제작하여 성형온도(175℃), 성형압력 70Kgf/cm2에서 유동길이를 평가.Mold was manufactured based on EMMI standard to evaluate the flow length at molding temperature (175 ℃) and molding pressure 70Kgf / cm2.

㉡ 유리전이온도(Tg), 열팽창계수㉡ glass transition temperature (Tg), thermal expansion coefficient

TMA(Thermal mechanical Analyser)로 평가 (승온속도 10℃/min)Evaluated by TMA (Thermal mechanical Analyser) (Raising temperature 10 ℃ / min)

㉢ 부착력 : 리드프레임(Copper Lead Frame)와 에폭시 봉지재와의 인장력 (UTM 이용)㉢ Adhesion: Tensile force between the lead frame and epoxy encapsulant (using UTM)

㉣ 굴곡강도, 탄성율: 상온(25℃)에서 경화된 EMC 성형시편(125 X 12.6 X 6.4 mm)을 준비하여 시편 중심부의 넓이와 두께를 Micrometer로 0.001mm까지 측정한 후 UTM 시험기에서 측정하였다.㉣ Flexural strength and modulus: EMC molded specimens (125 X 12.6 X 6.4 mm) cured at room temperature (25 ℃) were prepared, and the width and thickness of the center of the specimen were measured up to 0.001 mm with a micrometer and measured on a UTM tester.

㉤ 크랙성 평가㉤ Crack evaluation

28MQFP를 MPS(Multi Plunger System)성형기를 이용하여 175℃에서 120초간 성형시킨 후, 175℃ 4시간 후경화시킨 다음 IR REFLOW 온도를 265℃로 하여 3회 진행 후 초음파(C-SAM)설비를 이용하여 크랙이 발생한 수를 C-SAM으로 평가한다,After 28MQFP was molded at 175 ° C for 120 seconds using MPS (Multi Plunger System) molding machine, it was cured after 4 hours at 175 ° C, and then proceeded three times with IR REFLOW temperature at 265 ° C and then using ultrasonic (C-SAM) facility. Evaluate the number of cracks by C-SAM,

㉥ 박리성 평가㉥ Peelability evaluation

냉열충격시험기(Thermal Shock Tester)에서 -65℃ 에서 150℃까지 각각 10분간 지속하면서 200, 500 사이클로 가혹시험하여 리드프레임 및 리드온 칩과 에폭시봉지재 사이에 박리가 10%이상 발생한 수를 C-SAM으로 평가한다.In the Thermal Shock Tester, it was severely tested at 200 and 500 cycles for 10 minutes from -65 ° C to 150 ° C for 10 minutes, respectively, to determine the number of occurrences of more than 10% of peeling between the lead frame and the lead-on chip and the epoxy encapsulant. Evaluate with SAM.

상기 표 2 에서 나타난 바와 같이 본 발명의 실시예에서는 리드 온 칩 및 리드프레임과 에폭시 봉지재와의 접착특성이 월등히 향상되었음을 알 수 있고 신뢰성 측면에서 우수한 특성을 나타내었다.In the embodiment of the present invention, as shown in Table 2, it can be seen that the adhesion properties between the lead-on chip and the lead frame and the epoxy encapsulation material were greatly improved, and showed excellent characteristics in terms of reliability.

 

이상에서 설명한 바와 같이, 본 발명 반도체 소자 밀봉용 에폭시 수지 조성물에 의하면, 이소시아네이트 터미네이티드 폴리우레탄 프리폴리머, 다방향족 에폭시 수지와 다방향족 경화제를 사용하여, 열 충격, 특히 반도체 후 공정에서 패드면 및 칩에 발생하는 크랙 문제를 개선하고, 인체나 기기에 유해한 할로겐계 난연제 및 인계 난연제를 사용하지 않고도 난연성을 확보한 반도체 소자 밀봉용 에폭시 수지 조성물을 제공할 수 있다.As described above, according to the epoxy resin composition for sealing semiconductor elements of the present invention, an isocyanate terminated polyurethane prepolymer, a polyaromatic epoxy resin and a polyaromatic curing agent are used to heat the pad surface and the chip, particularly in a post-semiconductor process. It is possible to provide an epoxy resin composition for sealing a semiconductor element that has improved flame resistance without using a halogen-based flame retardant and a phosphorus-based flame retardant, which are harmful to humans or devices.

또한, 접착력 증가제로 말단기가 최소 1개이상의 머캅토기를 포함한 트리 아진계 수지를 사용하여 반도체 소자 봉지 공정에서 웨이퍼 칩 표면과 에폭시 봉지재 사이에 발생하는 박리 문제를 개선하여 우수한 신뢰성을 제공할 수 있다.In addition, by using a triazine-based resin containing at least one mercapto group as the adhesion increasing agent, the exfoliation problem occurring between the wafer chip surface and the epoxy encapsulant in the semiconductor element encapsulation process can be improved to provide excellent reliability. .

 

Claims (13)

하기 화학식 1로 표시되는 이소시아네이트 터미네이티드 폴리우레탄 프리폴리머 0.1 ~ 5 중량%, 하기 화학식 2로 표시되는 다방향족 에폭시 수지 0.1 ~ 10.7 중량%, 하기 화학식 4로 표시되는 다방향족 경화제 0.1 ~ 7.3  중량%, 하기 화학식 6으로 표시되는 트리아진계 수지 0.01 ~ 1.5  중량%, 경화촉진제 0.05 ~ 0.5  중량%, 및 무기충전제 75 ~ 95  중량%를 포함하는 것을 특징으로 하는 반도체 소자 밀봉용 에폭시 수지 조성물.0.1 to 5% by weight of isocyanate terminated polyurethane prepolymer represented by the following Chemical Formula 1, 0.1 to 10.7% by weight of the polyaromatic epoxy resin represented by the following Chemical Formula 2, 0.1 to 7.3 wt% of the polyaromatic curing agent represented by the following Chemical Formula 4, Epoxy resin composition for semiconductor element sealing, comprising 0.01 to 1.5% by weight of the triazine resin represented by the following formula (6), 0.05 to 0.5% by weight of the curing accelerator, and 75 to 95% by weight of the inorganic filler. [화학식 1][Formula 1]
Figure 112007088496613-pat00011
Figure 112007088496613-pat00011
(상기 식에서 R은 수소원자 또는 메틸기이고, n은 1 내지 10의 정수이다.)(Wherein R is a hydrogen atom or a methyl group and n is an integer from 1 to 10).   [화학식 2] [Formula 2]
Figure 112007088496613-pat00012
Figure 112007088496613-pat00012
(상기 식에서 R1,R2는 탄소수 1∼4의 알킬기로, 서로 동일하고도 달라도 (In the formula, R1, R2 is an alkyl group having 1 to 4 carbon atoms. 좋다. a는 0∼4의 정수, n은 1-7 사이의 수이다.)good. a is an integer of 0 to 4 and n is a number between 1 and 7)   [화학식 4][Formula 4]
Figure 112007088496613-pat00013
Figure 112007088496613-pat00013
(상기 식에서 R1,R2는 탄소수 1∼4의 알킬기로, 서로 동일하고도 달라도 (In the formula, R1, R2 is an alkyl group having 1 to 4 carbon atoms. 좋다. a는 0∼4의 정수, n은 1-7 사이의 수이다.)good. a is an integer of 0 to 4 and n is a number between 1 and 7)   [화학식 6][Formula 6]
Figure 112007088496613-pat00014
Figure 112007088496613-pat00014
(상기 식에서, R은 각각 같거나 다른 머캅토기 또는 아킬기, 아민기이다.)(Wherein R is the same or different mercapto group, alkyl group, or amine group, respectively.)  
삭제delete 삭제delete 삭제delete 제 1항에 있어서, 상기 트리아진계 수지는 2-디부틸아미노-4,6-디머캅토-S-트리아진, 2-디부틸아미노-머캅토-트리아진, 2-아닐리노-4,6-디머캅토-S-트리아진, 2,4,6-트리머컵토-S-트리아진으로 이루어진 군에서 선택된 하나 이상인 것을 특징으로 하는 반도체 소자 밀봉용 에폭시 수지 조성물.The method of claim 1, wherein the triazine resin is 2-dibutylamino-4,6-dimercapto-S-triazine, 2-dibutylamino-mercapto-triazine, 2-anilino-4,6- Dimercapto-S-triazine, 2,4,6-trimercupto-S-triazine is at least one selected from the group consisting of epoxy resin composition for sealing semiconductor elements.   제 1 항에 있어서,The method of claim 1, 상기 경화촉진제는 트리아진 이소시아네이트 이미다졸 화합물, 테트라페닐포스포니움 테트라페닐보레이트, 트리페닐포스핀 테트라페닐보레이트, 테트라페닐보론염, 벤질디메틸아민, 트리에탄올아민, 트리에틸렌디아민, 디메틸아미노에탄올, 트리(디메틸아미노메틸)페놀, 트리페닐포스핀, 디페닐포스핀, 페닐포스핀에서 선택되는 1종 이상인 것을 특징으로 하는 반도체 소자 밀봉용 에폭시 수지 조성물.The curing accelerator may be triazine isocyanate imidazole compound, tetraphenylphosphonium tetraphenylborate, triphenylphosphine tetraphenylborate, tetraphenylboron salt, benzyldimethylamine, triethanolamine, triethylenediamine, dimethylaminoethanol, tri ( Epoxy resin composition for semiconductor element sealing, characterized in that at least one selected from dimethylaminomethyl) phenol, triphenylphosphine, diphenylphosphine and phenylphosphine. 제 6항에 있어서, 상기 조성물은 경화촉진제로서 이소시아네이트형 잠재성 경화촉매를 사용하고, 추가로 아민형 보조촉매 또는 포스핀형 보조촉매를 사용하는 것을 특징으로 하는 반도체 소자 밀봉용 에폭시 수지 조성물. The epoxy resin composition for semiconductor element sealing according to claim 6, wherein the composition uses a isocyanate type latent curing catalyst as a curing accelerator, and further uses an amine type cocatalyst or a phosphine type cocatalyst. 제 1 항에 있어서,The method of claim 1, 하기 화학식 5로 표시되는 자일록(xyloc) 수지, 페놀 노볼락 수지, 크레졸 노볼락 수지 및 디사이클로펜타디엔형으로 이루어진 그룹으로부터 선택되는 1종 이상을 경화제로서 추가로 포함하는 것을 특징으로 하는 반도체 소자 밀봉용 에폭시 수지 조성물. A semiconductor device further comprising at least one member selected from the group consisting of xyloc resin represented by the following formula (5), a phenol novolak resin, a cresol novolak resin, and a dicyclopentadiene type as a curing agent Epoxy resin composition for sealing.     [화학식 5][Formula 5]
Figure 112007009339083-pat00015
Figure 112007009339083-pat00015
(상기 식에서, R1은 탄소수 1∼4의 알킬기로, a가 2이상일 경우, 서로 동일할 수도 있고 다를 수도 있다. a는 0∼4의 정수이며, n은 1-7 사이의 수이다.)(Wherein, R1 is an alkyl group having 1 to 4 carbon atoms, when a is 2 or more, may be the same or different. A is an integer of 0 to 4, n is a number between 1-7.)  
삭제delete 제 1항에 있어서, 상기 무기 충전제는 평균입자경이 0.1~2㎛의 구상실리카를 조성물중의 무기 충전제 전체의 3~10 중량%, 평균입자경이3~9㎛의 구상실리카를 조성물중의 무기 충전제 전체의 5~20 중량%, 평균입자경이 10~20㎛의 구상실리카를 조성물중의 무기 충전제 전체의 70~92 중량 %의 비율로 혼용 사용하는 것을  특징으로 하는 반도체 소자 밀봉용 에폭시 수지 조성물.The inorganic filler according to claim 1, wherein the inorganic filler comprises 3 to 10% by weight of the total inorganic filler in the composition of the spherical silica having an average particle diameter of 0.1 to 2 µm, and an inorganic filler in the composition of the spherical silica having an average particle diameter of 3 to 9 µm. Epoxy resin composition for semiconductor element sealing which uses the spherical silica of 5-20 weight% of the whole and 10-20 micrometers of average particle diameters mixedly in the ratio of 70-92 weight% of the whole inorganic filler in a composition. 제 1항 내지 제 10항 중 어느 한 항 기재의 반도체 소자 밀봉용 에폭시 수지 조성물을 헨셀믹서 또는 뢰디게 믹서를 이용하여 혼합한 뒤, 롤밀 또는 니이더로 용융혼련한 후, 냉각, 분쇄과정을 거쳐 얻은 최종 분말 제품으로 밀봉한 반도체 소자.The epoxy resin composition for sealing a semiconductor element according to any one of claims 1 to 10 is mixed using a Henschel mixer or a solid mixer, melt-kneaded with a roll mill or a kneader, and then cooled and pulverized. Semiconductor element sealed with the obtained final powder product.   제 11항에 있어서, 상기 최종 분말 제품을 저압 트랜스퍼 성형법, 인젝션(Injection) 성형법 또는 캐스팅(Casting) 성형법으로 밀봉한 반도체 소자.The semiconductor device according to claim 11, wherein the final powder product is sealed by a low pressure transfer molding method, an injection molding method, or a casting molding method.   제 12항에 있어서, 상기 반도체 소자가 구리 리드프레임을 포함하는 것을 특징으로 하는 반도체 소자.The semiconductor device according to claim 12, wherein the semiconductor device comprises a copper lead frame.
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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR900018257A (en) * 1989-05-31 1990-12-20 이수환 Epoxy Resin Compositions for Semiconductor Device Sealing
KR920002698A (en) * 1990-07-31 1992-02-28 이대원 Epoxy Resin Composition for Sealing Semiconductor Devices

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR900018257A (en) * 1989-05-31 1990-12-20 이수환 Epoxy Resin Compositions for Semiconductor Device Sealing
KR920002698A (en) * 1990-07-31 1992-02-28 이대원 Epoxy Resin Composition for Sealing Semiconductor Devices

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