KR100795772B1 - Method of preventing melted metallic compound from having oxidized film thereon during bump formation process and apparatus therefor - Google Patents

Abstract

A method and an apparatus for preventing an oxide film on a melted metallic compound at a bump formation process are provided to prevent formation of an oxide film around a nozzle end of a metal jetting nozzle and prevent deflection of the metallic compound. In a bump formation process of forming a bump on an object by metal-jetting a melted metallic compound(50), an inert gas is sprayed around a path of the metallic compound from a nozzle end(10a) of a metal jetting nozzle(10) to the object, thereby forming an inert gas layer enclosing the path. The step of injecting the gas is performed in a metal jetting process. When the metal jetting process is stopped, an inert gas is sprayed onto the nozzle end of the metal jetting nozzle to isolate the melted metallic compound remaining on the nozzle end from oxygen.

Description

METHODS OF PREVENTING MELTED METALLIC COMPOUND FROM HAVING OXIDIZED FILM THEREON DURING BUMP FORMATION PROCESS AND APPARATUS THEREFOR}

1 is a block diagram showing a method for preventing oxide film formation of a molten metal compound according to the present invention.

Figure 2 is a longitudinal sectional view showing a first embodiment of a nitrogen gas injector which can be applied to the method for preventing the formation of an oxide film of a molten metal compound according to the present invention.

Figure 3 is a longitudinal sectional view showing a second embodiment of a nitrogen gas injector that can be applied to the method for preventing the formation of an oxide film of a molten metal compound according to the present invention.

Figure 4a is a process for schematically explaining the operating state of the nitrogen gas injector when the metal jetting process is carried out using the nitrogen gas injector shown in Figure 2 according to the method for preventing the formation of oxide film of the metal compound of the present invention Illustrative diagram.

4b and 4c schematically illustrate the operating state of the nitrogen gas injector when the metal jetting process is stopped during the process performed using the nitrogen gas injector shown in FIG. 2 according to the method for preventing the formation of an oxide film of the metal compound of the present invention. Figure of process to do.

5 is a block diagram showing the configuration of an oxide film formation preventing device of a molten metal compound according to an embodiment of the present invention.

FIG. 6 is a flowchart illustrating a control method mounted on and executed by a control unit of an apparatus for preventing oxide film formation of molten metal compound according to an embodiment of the present invention; FIG.

Explanation of the reference numerals for the main parts in the drawing

10: metal jetting nozzle 10a: nozzle hole

40: semiconductor device 50: molten metal compound

60: nitrogen gas injector 61: metal jetting nozzle accommodation

61b: second nitrogen gas supply passage 62: through hole

63: first nitrogen gas supply flow path 64: second nitrogen gas supply port

65: first nitrogen gas supply port 66: first nitrogen gas injection nozzle

67: first nitrogen gas injection nozzle 70: nitrogen storage

71, 72: connector 73: pump

74, 75: first and second opening and closing means 80: control unit

A, B: nitrogen gas M: nitrogen gas atmosphere

The present invention prevents the formation of an oxide film on the surface of the molten metal compound remaining at the nozzle end of the jetting nozzle by contact with oxygen during the bump forming process by the jetting method used in the manufacture of semiconductor devices. The present invention relates to a method and an apparatus for preventing the molten metal compound jetted and dropped from being deflected together.

In general, a semiconductor device forms dozens of semiconductor chips, and electrode pads are formed on each of the semiconductor chips to form bumps to improve electrical connection with the substrate.

Conventional bump forming methods for forming bumps on the electrode pads include screen printing, electroplating, evaporation, and metal jetting.

Since the present invention relates to the metal jetting method among various bump forming methods for the semiconductor device as described above, only the bump forming method of the semiconductor device by the metal jetting method will be described below.

Meanwhile, a method of forming a bump of a semiconductor device by metal jetting is filed by the present applicant with the Korean Patent Office on September 7, 2004, and on February 17, 2006, issued Patent No. 10-0554913 (hereinafter referred to as "pre-registration"). Patent ", which is now registered as a patent".

As described above, the contents of the applicant's pre-registered patent, the bump formed through the reflow process after forming a bump by the metal jetting on the semiconductor holding the molten metal compound at a predetermined speed using a metal jetting device Is formed to form bumps in the semiconductor device.

Such a pre-registered patent has the advantage that it is possible to minimize the defect rate of the bumps, and the initial investment cost is low, and the bump forming process can be easily performed for a large amount and a small amount of semiconductor devices.

However, the pre-registered patent discloses that when the molten metal compound remaining at the nozzle end of the metal jetting nozzle comes into contact with oxygen, the molten metal compound is oxidized to form an oxide film (a film in the form of a film). However, there is a problem that agglomeration or agglomeration at the end of the nozzle hole has a bad effect on the jetting of the molten metal compound.

In addition, in order to prevent the molten metal compound jetted from the metal jetting nozzle from contacting with oxygen, when a gas for preventing air contact is injected onto the metal jetting nozzle, the jetting force of the gas is jetted from the metal jetting nozzle to free fall. There is also a problem in that the molten metal compound falling by affecting the trajectory of the molten metal compound is deflected to cause a defect.

The present invention is to solve the above problems, so that the molten metal compound remaining in the nozzle end of the metal jetting nozzle is not in contact with the surrounding oxygen not only when the metal jetting process is being performed, but also when the metal jetting process is stopped. Thereby, the bumping method of the jetting method used in the manufacture of a semiconductor device that can prevent the formation of an oxide film (agglomerated or agglomerated at the end of the nozzle hole as well as a film-type film) around the nozzle hole of the metal jetting nozzle It is an object of the present invention to provide a method for preventing the formation of an oxide film of a molten metal compound during the process and an apparatus for preventing the same.

Another object of the present invention is to provide a jetting method for preventing a deflection error caused by gas injection to prevent the molten metal compound remaining at the nozzle end of the metal jetting nozzle from contacting oxygen to form an oxide film. It is to provide a method for preventing the deflection error of molten metal compound during bump formation process.

In addition, another object of the present invention is an oxide film (a film-type film as well as a nozzle hole around the nozzle hole due to the contact of oxygen with molten metal compound remaining in the nozzle end of the jetting nozzle during the bump forming process by the jetting method). To prevent the formation of agglomerates or agglomerates at the end, and at the same time prevent deflection errors of the molten metal compound jetted and dropped.

In order to achieve the above and other objects, the method for preventing oxide film formation of a molten metal compound during a bump forming process for a semiconductor device according to the present invention includes metal jetting a molten metal compound on an object such as a semiconductor device. In the bump forming process of a semiconductor device for forming bumps, an inert gas film is formed around a metal jetting nozzle using a nitrogen gas injector so that a nitrogen gas atmosphere is formed around the metal jetting nozzle when the metal jetting process is performed. Forming a first nitrogen gas injection step; Second nitrogen gas that injects nitrogen gas toward the nozzle of the metal jetting nozzle using a nitrogen gas injector so that the molten metal compound remaining in the nozzle of the metal jetting nozzle does not come into contact with oxygen when the metal jetting process is stopped. It provides a method for preventing the formation of the oxide film of the molten metal compound during the jet-forming bump forming process for the semiconductor device characterized in that it comprises a spraying step.

According to the above configuration, the molten metal compound remaining at the nozzle end of the metal jetting nozzle is not contacted with oxygen even when the metal jetting process is stopped as well as when the metal jetting process is stopped. Prevents the formation of oxide films (such as film-like films or agglomerates or agglomerations at the end of nozzle holes) due to the contact of molten metal compound with oxygen around the ball, as well as jetting from metal jetting nozzles The molten metal compound may be prevented from generating a deflection error due to the gas injection to prevent the oxide film formation.

In addition, the present invention, in the bump forming step of the semiconductor device to form a bump by metal jetting the molten metal compound on the semiconductor device, it is mounted outside the metal jetting nozzle to form an inert gas film along the periphery of the metal jetting nozzle A gas injector having a first gas supply passage for injecting gas to form the gas and a second nitrogen gas supply passage for injecting gas in the nozzle end of the metal jetting nozzle, the gas injector being mounted outside the metal jetting nozzle; Nitrogen storage unit; The first gas supply passage and the second gas supply passage of the nitrogen injector are respectively connected to each other by a connection pipe to pump the gas in the nitrogen storage unit through the connection pipe to the first gas supply passage and the second gas supply passage. A pump; First opening and closing means for opening and closing the connection pipes respectively mounted on the connection pipes; When the bump forming process of the jetting method for a semiconductor device, characterized in that it is electrically connected to the first opening and closing means and the second opening and closing means for controlling the opening and closing operation of the first opening and closing means and the second opening and closing means Provided is an apparatus for preventing oxide film formation of a molten metal compound. Here, the gas is preferably nitrogen gas.

As a result, the oxide film (a film-type film as well as a nozzle hole around the nozzle hole due to contact of oxygen with molten metal compound remaining at the nozzle end of the metal jetting nozzle during the bump forming process by the jetting method for the semiconductor device). It is possible to prevent the agglomeration or agglomeration of the end) and to prevent the deflection of the molten metal compound jetted and dropped, thereby minimizing jetting defects and bump defects, thereby improving productivity.

Hereinafter, a method and a device for preventing oxide film formation of a molten metal compound during a jetting bump forming process for a semiconductor device according to a preferred embodiment of the present invention will be described in detail with reference to the accompanying drawings. same.

1 is a block diagram illustrating a method of preventing oxide film formation of a molten metal compound according to an embodiment of the present invention.

As illustrated in FIG. 1, the method for preventing the formation of an oxide film of a molten metal compound during a jet forming process for a semiconductor device according to an embodiment of the present invention includes a first nitrogen gas injection step S100 and a second nitrogen. Gas injection step (S110) is made.

The first nitrogen gas injection step (S100) is a nitrogen gas injector (S100) so that a nitrogen gas atmosphere, which is an inert gas, is formed around the metal jetting nozzle 10 when the metal jetting process for the semiconductor device 40 is performed. 60 to form a nitrogen gas film around the metal jetting nozzle 10.

In the first nitrogen gas injection step S100, the molten metal compound 50 remaining at the nozzle stage of the metal jetting nozzle 10 is nitrogen gas atmosphere (without being in direct contact with the nitrogen gas atmosphere. The molten metal compound 50 jetted and dropped from the metal jetting nozzle 10 is formed by forming a nitrogen gas film having a wide truncated conical shape around the metal jetting nozzle 10 so as to be placed under a full state of gas). The nozzle stage of the metal jetting nozzle 10, in particular, the nozzle hole, is completely blocked by the oxygen of the molten metal compound 50 remaining in the nozzle end of the metal jetting nozzle 10 without affecting the trajectory of the metal jetting nozzle 10. (10a) It is possible to reliably prevent the formation of oxide films (lumps or agglomerates at the end of nozzle holes as well as films in the form of films) produced by oxidation of the molten metal compound 50 in the vicinity. It becomes possible.

2 and 3 show a first embodiment and a second embodiment of a nitrogen gas injector which can be applied to the method for preventing oxide film formation of a molten metal compound according to the present invention, and FIG. Fig. 1 is a longitudinal sectional view showing, in cross section, a first embodiment of a nitrogen gas injector applicable to the method for preventing the formation of an oxide film of a molten metal compound.

As shown in FIG. 2, the nitrogen gas injector 60 as an embodiment applicable to the method for preventing the formation of an oxide film of a metal compound according to the present invention includes a metal jetting nozzle accommodating portion 61, a through hole 62, The first nitrogen gas supply passage 63, the second nitrogen gas supply port 64, and the first nitrogen gas supply port 65 are provided outside the metal jetting nozzle 10.

The metal jetting nozzle accommodating portion 61 is formed to be concave on the upper surface of the nitrogen gas injector 60 to be larger than the outer surface of the metal jetting nozzle 10 and formed inwardly along the inner surface of the upper end portion 61a. And a second nitrogen gas supply passage 61b is formed between the outer surface of the metal jetting nozzle 10 and the inner surface of the metal jetting nozzle accommodating portion 61 when assembled with the metal jetting nozzle 10. The metal jetting nozzle accommodating portion 61 may be larger than the volume of the metal jetting nozzle 10. In addition, the second nitrogen gas supply passage 61b sprays nitrogen gas directly to the nozzle end of the metal jetting nozzle 10 when the metal jetting process is not performed on the semiconductor device 40. The oxide film of the molten metal oxide 50 is prevented from being formed in the nozzle hole 10a.

The through hole 62 is formed to communicate with the metal jetting nozzle accommodating portion 61 on the lower surface of the nitrogen gas injector 60, but the metal jetting nozzle 10 and the metal jetting nozzle accommodating portion 61 have been assembled. The second nitrogen gas supply passage 61b formed at the time is connected to communicate with the through hole 62. Therefore, the through hole 62 serves as an outlet of the molten metal compound 50 jetted from the metal jetting nozzle 10 and also serves as an exhaust port of the second nitrogen gas supply passage 61b.

The first nitrogen gas supply passage 63 is formed concave along the lower edge of the nitrogen gas injector 60. That is, the first nitrogen gas supply passage 63 is a slot shape deeply formed along the longitudinal direction of the nitrogen injection nozzle 10, and the lower end of the first nitrogen gas supply passage 63 is bent radially at a predetermined angle. The nitrogen gas that is formed and injected through the first nitrogen gas supply passage 63 forms a nitrogen gas film having a truncated cone shape having a wide bottom portion.

The second nitrogen gas supply port 64 is formed to communicate with the metal jetting nozzle accommodating portion 61 to inject nitrogen gas into the second nitrogen gas supply passage 61b and supply the first nitrogen gas. The sphere 65 is formed in communication with the first nitrogen gas supply passage 63 to inject nitrogen gas into the first nitrogen gas supply passage 63.

3 is a longitudinal sectional view showing a second embodiment of a nitrogen gas injector which can be applied to the method for preventing the formation of an oxide film of a molten metal compound according to the present invention.

As shown in FIG. 3, another embodiment of the nitrogen gas injector 60 includes a first nitrogen injection nozzle 67 and a second nitrogen injection nozzle 68 mounted along an outer circumferential surface of the metal jetting nozzle 10. Form.

The first nitrogen injection nozzle 67 is installed to be inclined outward along the periphery of the metal jetting nozzle 10 to inject nitrogen gas inclined outward to form a nitrogen gas film along the periphery of the metal jetting nozzle 10. Since the nitrogen gas film has a wide truncated conical shape, the metal jetting nozzle is formed by protecting the nozzle end of the metal jetting nozzle 10 from external air and forming a nitrogen gas filled with nitrogen gas inside the nitrogen gas film. The molten metal jetted and dropped from the metal jetting nozzle 10 while reliably preventing oxidation of the molten metal compound 50 remaining in the nozzle end (or nozzle hole 10a) of (10) by oxygen. It does not affect the trajectory of compound 50 at all.

The second nitrogen injection nozzle 68 is installed to be inclined inward along the periphery of the metal jetting nozzle 10 to directly inject nitrogen gas to the nozzle end of the metal jetting nozzle 10 to perform the metal jetting process even when the metal jetting process is not performed. Oxidation by oxygen of the molten metal compound 50 remaining in the nozzle end (or nozzle hole 10a) of the jetting nozzle 10 can be prevented.

The first and second embodiments of the above-described nitrogen gas injector 60 are not only a method for preventing oxide film formation of molten metal compound during a jetting bump forming process for a semiconductor device in accordance with an embodiment of the present invention but also described below. Since it applies to all the oxide film formation prevention device of the molten metal compound during the jetting process of the bumping method for the semiconductor device according to the invention, a specific configuration of the nitrogen gas injector 60 will be omitted.

In the second nitrogen gas injection step S110, when the metal jetting process is stopped, the nitrogen gas injector 60 does not contact the oxygenated molten metal compound 50 remaining in the nozzle stage of the metal jetting nozzle 10. Using direct injection of nitrogen gas toward the nozzle end of the metal jetting nozzle (10).

When the first nitrogen gas injection step (S100) is performed in the method of preventing oxide film formation of the molten metal compound during the jetting process for forming a jet of the semiconductor device according to the embodiment of the present invention, the second nitrogen gas injection step is performed. The execution of S110 is stopped, and when the second nitrogen gas injection step S110 is performed, the execution of the first nitrogen gas injection step S100 is stopped.

A series of processes for preventing oxide film formation of a molten metal compound during a jetting bump forming process for a semiconductor device according to an embodiment of the present invention described above are shown in FIGS. 4A to 4C.

5 and 6 are views illustrating an oxide film formation preventing apparatus of a molten metal compound according to an embodiment of the present invention and a control method thereof, and FIG. 5 is a molten metal compound according to an embodiment of the present invention. Is a block diagram illustrating the configuration of the oxide film formation preventing device and the organic relations therebetween.

As shown in FIG. 5, an oxide film forming and deflection prevention device of a molten metal compound during a jet forming process of a semiconductor device according to an embodiment of the present invention includes a nitrogen gas injector 60 and a nitrogen storage unit. 70, a pump 73, first opening and closing means and second opening and closing means 74 and 75, and a control unit 80.

The nitrogen gas injector 60 is mounted to the outside of the metal jetting nozzle 10 and a first nitrogen gas supply passage 63 for injecting nitrogen gas to form a nitrogen gas film along the periphery of the metal jetting nozzle 10; A second nitrogen gas supply passage 61b for injecting nitrogen gas into the nozzle end of the metal jetting nozzle 10 is mounted on the outside of the metal jetting nozzle 10, and the first and second nitrogen gas injectors 60 are provided. The configuration of the second embodiment will be omitted with reference to the accompanying drawings, FIGS. 2 and 3 and specifically described above.

The nitrogen storage unit 70 stores nitrogen, and the form of nitrogen to be stored may be any form such as compressed gas or liquefied nitrogen.

The pump 73 is connected in communication with the first and second nitrogen gas supply passages 61b and 63 of the nitrogen gas injector 60 by connecting pipes 71 and 72, respectively. Nitrogen gas therein is pumped to the first and second nitrogen gas supply passages 61b and 63 through the connecting pipes 71 and 72.

The first opening and closing means and the second opening and closing means 74 and 75 are respectively mounted on the connecting pipes 71 and 72 to control the connecting pipes 71 and 72, and the opening and closing means are connected to the connecting pipes 71 and 72. It is possible to use any opening and closing means as long as the flow path of nitrogen gas can be interrupted by opening and closing), but it is preferable to use an solenoid valve such as a solenoid valve for automation.

In addition, the second opening and closing means 74 is mounted on the connection pipe 72 connecting the second nitrogen gas supply port 64 and the pump 73, the first opening and closing means 75 is the first nitrogen By being mounted on the connection pipe 71 connecting the gas supply port 65 and the pump 73, the second opening and closing means 74 is connected to the nozzle end (or nozzle hole 10a) of the metal jetting nozzle 10. The nitrogen gas injected directly to the control unit is intermittent, and the first opening / closing unit 75 intercepts the nitrogen gas forming the truncated nitrogen gas film along the periphery of the metal jetting nozzle 10.

The control unit 80 is electrically connected to the first and second opening and closing means 74 and 75, respectively, to control the opening and closing operations of the first opening and closing means and the second opening and closing means 74 and 75. A program comprising a control method as described below is mounted, and by executing this program, an oxide film formation and deflection prevention device of a molten metal compound during a jetting bump forming process for a semiconductor device according to an embodiment of the present invention includes a controller ( 80) can be automatically controlled.

The control method includes a process execution check step (S300), a first nitrogen gas injection step (S310), a process-oriented check step (S320), and a second nitrogen gas injection step (S330).

The process execution check step (S300) checks whether the metal jetting process for the semiconductor device 40 is performed in order to perform the first nitrogen gas injection step (S310) only when the metal jetting process is being performed.

The first nitrogen gas injection step (S310) is the injection path of the metal jetting nozzle 10 by opening the first opening and closing means (75) when it is confirmed that the metal jetting process is performed in the process implementation confirmation step (S300). A nitrogen gas film surrounding the periphery is formed, and the nitrogen gas film formed at this time has a truncated cone shape in which a cross section thereof is widened toward the place where the semiconductor device is located. In the first nitrogen gas injection step (S310), the nozzle stage of the metal jetting nozzle 10 is blocked from external air by the nitrogen gas film formed, and the nitrogen jet is filled in the inner space of the nitrogen gas film. Since the nozzle stage of the () is placed in the nitrogen gas atmosphere, even though the molten metal compound 50 remains in the nozzle stage (or nozzle hole 10a) of the metal jetting nozzle 10, the contact with oxygen is blocked, thereby It is possible to surely prevent the formation of the oxide film produced by the contact of.

The process stop checking step (S320) confirms whether the metal jetting process is stopped so that the second nitrogen gas injection step (S330) can be performed only when the metal jetting process is stopped.

The second nitrogen gas injection step (S330) closes the first opening / closing means (75) and opens the second opening / closing means (74) when it is confirmed that the metal jetting process is stopped in the process stopping confirmation step (S320). Molten metal compound remaining in the nozzle end (or nozzle hole 10a) of the metal jetting nozzle 10 by injecting nitrogen gas into the nozzle end (or nozzle hole 10a) of the metal jetting nozzle 10 ( 50) is to prevent contact with oxygen to form an oxide film even in the state where the metal jetting process is important.

Although the preferred embodiments of the present invention have been described above, the present invention is not limited thereto, and various modifications and changes can be made within the scope of the claims and the detailed description of the invention and the accompanying drawings. Naturally, it belongs to the range of.

As described above, the present invention is not only when the molten metal compound remaining at the nozzle end (or nozzle hole) of the metal jetting nozzle is subjected to air but also when the metal jetting process is stopped. Method and apparatus for preventing oxide film formation of molten metal compound during jetting bump forming process for semiconductor device which prevents oxide film from forming around nozzle end (or nozzle hole) of metal jetting nozzle by preventing contact with To provide.

In addition, the present invention has an advantageous effect that the molten metal compound jetted from the metal jetting nozzle can be prevented from causing a deflection error due to the gas injection to prevent the formation of the oxide film.

In addition, the present invention prevents the formation of an oxide film around the nozzle end (or nozzle hole) of the metal jetting nozzle, and prevents the molten metal compound jetted and dropped from being deflected out of the normal trajectory, thereby delaying the bump forming process. It is possible to prevent and to significantly improve the productivity by minimizing the defect of the bump due to the deflection of the molten metal compound.

Claims (18)

In the bump forming process of forming a bump by metal jetting the molten metal compound on the object, Injecting an inert gas around a path of the metal compound from the nozzle end of the metal jetting nozzle to the object to form an inert gas film surrounding the path while the center portion of the path is emptied; Method for preventing the formation of the oxide film of the molten metal compound during the bumping process of the jetting method, characterized in that it comprises a. The method of claim 1, The first gas injection step occurs when a metal jetting process is performed; A second gas injection step of injecting an inert gas into the nozzle end of the metal jetting nozzle 10 so that the molten metal compound remaining at the nozzle end of the metal jetting nozzle stops contact with oxygen when the metal jetting process is stopped; To; A method of preventing the formation of an oxide film of a molten metal compound during a bump forming process of a jetting method. The method of claim 1, The gas film formed in the first gas injection step is formed to be wider the further away from the metal jetting nozzle, oxide film formation prevention method of the molten metal compound during the bump forming process of the jetting method. The method of claim 3, wherein The gas film formed in the first gas injection step is formed so as to block the outside air from the metal jetting nozzle to the object, characterized in that the oxide film formation prevention method of the molten metal compound during the bump forming process of the jetting method. The method of claim 2, In addition to the step of confirming whether the metal jetting process has been performed or stopped, The first gas injection step is performed when it is confirmed that the metal jetting process is performed in the checking step, and the second gas injection step is performed when it is confirmed that the metal jetting process is stopped in the checking step. A method of preventing oxide film formation of molten metal compound during a jetting bump forming process. The method according to any one of claims 1 to 5, The method for preventing the formation of an oxide film of a molten metal compound in a bump forming process of the jetting method, characterized in that the inert gas is nitrogen gas. An apparatus for blocking the formation of an oxide film on the metal compound in the bump forming step of forming a bump by metal jetting the molten metal compound on the object, A first gas supply passage that injects an inert gas to form an inert gas film that is emptied from the nozzle end of the metal jetting nozzle from the nozzle end of the metal jet nozzle to a center portion of the path; An apparatus for preventing the formation of an oxide film of a molten metal compound during a jetting bump forming process, comprising: The method of claim 7, wherein The first gas supply passage is formed to be bent obliquely outward toward the object, so that the inert gas film is wider as the gas film is closer to the object, the molten metal compound during the bumping process of the jetting method Oxide film formation prevention device. The method of claim 7, wherein And an inert gas is injected through the first gas supply passage during a metal jetting process. The method of claim 8, A second gas supply passage formed to inject an inert gas into the nozzle end of the metal jetting nozzle in which the metal compound is melted and discharged; An apparatus for preventing oxide film formation of a molten metal compound during a jetting bump forming process, further comprising: The method of claim 10, The second gas supply passage is inclined inwardly along the periphery of the metal jetting nozzle near the nozzle end of the metal jetting nozzle such that inert gas is injected to be collected in a radial direction of the metal jetting nozzle toward the nozzle end of the metal jetting nozzle. An apparatus for preventing oxide film formation of a molten metal compound during a jetting bump forming process, characterized in that formed. The method of claim 10, And an inert gas is injected through the second gas supply passage while the metal jetting process is stopped. The method according to any one of claims 7 to 12, The inert gas is nitrogen gas, characterized in that the oxide film forming prevention device of the molten metal compound during the bumping process of the jetting method. An apparatus for blocking the formation of an oxide film on the metal compound in the bump forming step of forming a bump by metal jetting the molten metal compound on the object, A metal jetting nozzle receptacle for accommodating the nozzle end of the metal jetting nozzle, A through-hole formed toward the object so as to communicate with the nozzle end; A first gas supply passage formed to inject an inert gas so as to form an inert gas film in which a central portion in which the path is located is wrapped around the path from the nozzle end of the metal jetting nozzle to the object when the metal jetting process is performed; When the metal jetting process is stopped, a second gas supply passage for injecting inert gas into the nozzle end of the metal jetting nozzle to prevent external oxygen from accessing the nozzle end in the metal jetting nozzle accommodation part. A gas supply unit provided; An apparatus for preventing the formation of an oxide film of a molten metal compound during a jetting bump forming process, comprising: The method of claim 14, And the first gas supply passage is bent outwardly inclined toward the object to prevent oxide film formation of the molten metal compound during the jetting bump forming process. The method of claim 14, The second gas supply passage is formed inclined inwardly along the periphery of the metal jetting nozzle near the nozzle end of the metal jetting nozzle, the oxide film forming prevention device of the molten metal compound during the bumping process of the jetting method. The method according to any one of claims 14 to 16, Wherein the gas is nitrogen gas, characterized in that the oxide film forming prevention device of the molten metal compound during the bumping process of the jetting method. The method of claim 17, A gas storage unit storing the inert gas to supply the inert gas to the first gas supply passage and the second gas supply passage; A connecting tube formed to communicate with the first gas supply passage and the second gas supply passage from the gas storage part; A pump installed in the connection pipe to pump the gas into the first gas supply passage and the second gas supply passage; Opening and closing means for selectively clamping the connecting pipe; The gas is supplied from the gas reservoir to the second gas supply passage when the metal jetting process is stopped, and the gas is supplied from the gas reservoir to the first gas supply passage when the metal jetting process is performed. An apparatus for preventing the formation of an oxide film of a molten metal compound during a jetting bump forming process, characterized in that it is supplied.

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