KR100790719B1 - Chemical Bath Controllable Temperature and Its Temperature Control Method - Google Patents

Chemical Bath Controllable Temperature and Its Temperature Control Method Download PDF

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KR100790719B1
KR100790719B1 KR1020030079867A KR20030079867A KR100790719B1 KR 100790719 B1 KR100790719 B1 KR 100790719B1 KR 1020030079867 A KR1020030079867 A KR 1020030079867A KR 20030079867 A KR20030079867 A KR 20030079867A KR 100790719 B1 KR100790719 B1 KR 100790719B1
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temperature
solution
solution tank
zone
etching solution
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KR1020030079867A
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Korean (ko)
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KR20050045702A (en
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이채갑
조인배
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동부일렉트로닉스 주식회사
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/67086—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring

Abstract

본 발명은 웨이퍼를 식각하는 식각용액이 담긴 용액조에 있어서, 식각용액이 균일한 온도분포를 갖도록 식각용액의 평균온도보다 저온의 구역만을 극부 가열하여 균일한 온도분포가 이루어지도록 식각용액의 온도를 제어하는 용액조 및 그 온도제어방법에 관한 것이며, 식각용액 전체를 가열하지 않고 저온 구역만 가열하기 때문에 에너지 절감 및 신속하게 균일한 온도분포를 이룰 수 있다.In the solution tank containing the etching solution for etching the wafer, the temperature of the etching solution is controlled so that the etching solution has a uniform temperature distribution by heating only the region lower than the average temperature of the etching solution so that the etching solution has a uniform temperature distribution. The present invention relates to a solution tank and a method for controlling the temperature thereof, and because only the low temperature region is heated without heating the entire etching solution, energy saving and rapid temperature distribution can be achieved.

용액조, 식각용액, 히터, 온도측정센서, 온도분포Solution bath, etching solution, heater, temperature sensor, temperature distribution

Description

구역별 온도제어가 가능한 용액조 및 그 온도제어방법{Chemical Bath Controllable Temperature and Its Temperature Control Method}Chemical bath controllable temperature and Its temperature control method {Chemical Bath Controllable Temperature and Its Temperature Control Method}

도 1a는 종래의 기술에 따른 제1 예의 용액조의 구조를 나타낸 개략도이고,1A is a schematic view showing the structure of a solution tank of a first example according to the prior art,

도 1b는 종래의 기술에 따른 제2 예의 용액조의 구조를 나타낸 개략도이고,1B is a schematic view showing the structure of a solution tank of a second example according to the prior art,

도 1c는 종래의 기술에 따른 제3 예의 용액조의 구조를 나타낸 개략도이고,1C is a schematic view showing the structure of a solution tank of a third example according to the prior art,

도 2는 본 발명의 한 실시예에 따른 용액조의 구조를 나타낸 개략도이고,2 is a schematic view showing the structure of a solution bath according to an embodiment of the present invention,

도 3은 도 2에 도시된 온도측정센서의 위치를 나타낸 용액조의 평면도이고,3 is a plan view of a solution tank showing the position of the temperature measuring sensor shown in FIG.

도 4는 도 2에 도시된 히터의 개략도이며,4 is a schematic view of the heater shown in FIG. 2,

도 5는 도 3에 도시된 용액조에 담긴 식각용액의 온도제어방법을 나타낸 블록도이다.FIG. 5 is a block diagram illustrating a temperature control method of an etching solution contained in the solution tank shown in FIG. 3.

* 도면의 주요부분에 대한 부호의 설명 *    Explanation of symbols on the main parts of the drawings

10, 20, 100 : 용액조 11, 111 : 순환배관10, 20, 100: solution bath 11, 111: circulation piping

12, 112 : 펌프 13, 23, 113 : 히터12, 112: pump 13, 23, 113: heater

14, 114 : 필터 15, 25, 140 : 용액14, 114: filter 15, 25, 140: solution

16, 26, 110 : 온도측정센서16, 26, 110: Temperature measuring sensor

120a, 120b, 120c, 120d : 히터의 섹터120a, 120b, 120c, 120d: sector of heater

140a, 140b, 140c, 140d : 용액의 구역
140a, 140b, 140c, 140d: zone of solution

본 발명은 웨이퍼를 식각하는 식각용액이 담긴 용액조에 관한 것으로, 특히, 용액조에 담긴 식각용액이 균일한 온도분포를 갖도록 식각용액의 평균온도보다 저온의 구역만을 가열하여 균일한 온도분포가 이루어지도록 식각용액의 온도를 제어하는 용액조 및 그 온도제어방법을 제공하는 데 있다.The present invention relates to a solution tank containing an etching solution for etching a wafer, and in particular, by etching only a region lower than the average temperature of the etching solution so that the etching solution contained in the solution bath has a uniform temperature distribution, etching is performed to achieve a uniform temperature distribution It is to provide a solution bath for controlling the temperature of the solution and a temperature control method thereof.

일반적으로 반도체 소자는 다양한 단위공정을 거쳐 제조되며, 이런 다양한 단위공정 중에는 화학반응을 일으키는 용액들이 사용된다. 이런 다양한 단위공정 중에 한 공정으로서 식각공정은 식각용액이 수용된 용액조에 반도체 소자를 침지하여 화학 반응시킨다.In general, semiconductor devices are manufactured through various unit processes, and solutions that cause chemical reactions are used in these various unit processes. As one of the various unit processes, an etching process immerses a semiconductor device in a solution tank containing an etching solution and chemically reacts it.

일반적으로 식각용액을 담고 있는 용액조는 식각용액이 흘러 넘치게 하여 공정을 수행하는 오버플로 방식이 이용된다. 그리고 이런 용액조에는 히터가 설치되어 식각용액의 온도를 제어하는데, 그 온도제어방식에 따라 3종류로 구분한다.In general, the solution tank containing the etching solution is used an overflow method in which the etching solution flows to perform the process. And a heater is installed in this bath to control the temperature of the etching solution, which is divided into three types according to the temperature control method.

도면에서, 도 1a는 종래의 기술에 따른 제1 예의 용액조의 구조를 나타낸 개략도이고, 도 1b는 종래의 기술에 따른 제2 예의 용액조의 구조를 나타낸 개략도이며, 도 1c는 종래의 기술에 따른 제3 예의 용액조의 구조를 나타낸 개략도이다.1A is a schematic diagram showing the structure of a solution tank of a first example according to the prior art, and FIG. 1B is a schematic diagram showing the structure of a solution tank of the second example according to the prior art, and FIG. It is the schematic which showed the structure of the solution tank of 3 examples.

도 1a는 용액조 순환부 가열제어방식이고, 도 1b는 용액조 하부 직접가열 제어방식이며, 도 1c는 도 1a와 도 1b의 방식을 혼합한 혼합방식이다. Figure 1a is a solution tank circulation heating control method, Figure 1b is a solution tank lower direct heating control method, Figure 1c is a mixing method of mixing the method of Figure 1a and Figure 1b.                         

용액조 순환부 가열제어방식은 도 1a에 도시된 바와 같이, 용액조(10)에 순환배관(11)이 연결되고, 순환배관(11)에는 펌프(12)와 히터(13) 및 필터(14)가 장착된다. 따라서 용액조(10)의 식각용액은 펌프(12)의 작동에 의해 순환배관(11)을 통해 펌프(12)와 히터(13)및 필터(14)를 거쳐 다시 용액조(10)로 유입된다. 이와 같이 식각용액(15)이 순환하는 과정에서 히터(13)에 의해 가열된다.As shown in FIG. 1A, the solution tank circulation heating control method includes a circulation pipe 11 connected to the solution tank 10, and a pump 12, a heater 13, and a filter 14 connected to the circulation pipe 11. ) Is mounted. Therefore, the etching solution of the solution tank 10 is introduced into the solution tank 10 through the pump 12, the heater 13, and the filter 14 through the circulation pipe 11 by the operation of the pump 12. . In this way, the etching solution 15 is heated by the heater 13 in the process of circulating.

또한 용액조(10)에는 온도측정센서(16)가 식각용액(15)에 침지되어 식각용액(15)의 온도를 측정한다.In addition, the temperature measuring sensor 16 is immersed in the etching solution 15 in the solution tank 10 to measure the temperature of the etching solution 15.

이런 용액조 순환부 가열제어방식에 따른 용액조의 온도분포를 살펴보면, 순환된 식각용액이 용액조로 유입되는 부위에는 온도가 높고 그 지점에서 멀어질수록 온도가 낮다. 도면에서 CSL(Chemical Supply Line)은 용액 공급라인으로 용액조에 식각용액을 공급한다.Looking at the temperature distribution of the solution tank according to the heating control method of the solution tank circulation portion, the temperature is high at the site where the circulated etching solution is introduced into the solution tank, and the temperature is lower as the distance from the point. In the drawing, CSL (Chemical Supply Line) is a solution supply line to supply the etching solution to the solution tank.

한편, 용액조 하부 직접가열 제어방식은 도 1b에 도시된 바와 같은 구조를 갖는다. 용액조(20)의 저면에 히터(23)가 위치하고, 용액조(20)에 담긴 식각용액(25)은 히터(23)에 의해 가열된다. 하지만, 이런 직접가열 제어방식은 히터(23)가 온(on)/오프(off)됨에 따라 가열시와 비가열시의 온도차가 크다. 또한 하나의 온도측정센서(26)에 의해 식각용액(25)의 온도가 측정되기 때문에, 온도측정센서(26) 근처의 온도에 의해 전체 식각용액(25)의 온도가 제어된다. 즉, 일부분에서 측정된 온도데이터에 의해 식각용액 전체가 가열되기 때문에 온도분포차가 감소되지 않은 상태로 가열된다.On the other hand, the solution tank lower direct heating control method has a structure as shown in Figure 1b. The heater 23 is positioned at the bottom of the solution bath 20, and the etching solution 25 contained in the solution bath 20 is heated by the heater 23. However, such a direct heating control method has a large temperature difference between heating and non-heating as the heater 23 is turned on / off. In addition, since the temperature of the etching solution 25 is measured by one temperature measuring sensor 26, the temperature of the entire etching solution 25 is controlled by the temperature near the temperature measuring sensor 26. That is, since the entire etching solution is heated by the temperature data measured at a portion, the temperature distribution difference is heated without being reduced.

한편, 도 1c에 도시된 혼합방식은 상기의 도 1a 및 1b의 온도제어방식보다는 비교적 균일한 온도로 제어 가능하지만, 도 1b에 도시된 직접가열 제어방식의 단점을 다소 보완한 것일 뿐, 직접가열 제어방식의 원천적인 불균일한 온도분포의 문제점은 해결하지 못한다는 단점이 있다.On the other hand, the mixing method shown in Figure 1c can be controlled to a relatively uniform temperature than the temperature control method of Figures 1a and 1b above, but only slightly compensate for the disadvantages of the direct heating control method shown in Figure 1b, direct heating There is a disadvantage that the problem of the source non-uniform temperature distribution of the control method cannot be solved.

앞에서 설명한 바와 같이, 용액조에 담긴 식각용액의 온도가 불균일하면, 식각의 균일도에 차이가 발생하여 제품의 불량율이 증가하게 된다. 따라서, 식각용액의 온도분포를 균일하게 제어하는 것이 중요하다.As described above, if the temperature of the etching solution contained in the solution tank is non-uniform, there is a difference in the uniformity of the etching to increase the defective rate of the product. Therefore, it is important to uniformly control the temperature distribution of the etching solution.

본 발명은 앞서 설명한 바와 같은 종래 기술의 문제점을 해결하기 위하여 제안된 것으로서, 용액조에 담긴 식각용액의 온도를 여러 구역에서 측정하고 상대적으로 저온의 구역에 위치한 히터를 작동하여 용액조에 담긴 식각용액의 온도를 전체적으로 균일하게 유지하는 구역별 온도제어가 가능한 용액조 및 그 온도제어방법을 제공하는 데 그 목적이 있다.The present invention has been proposed to solve the problems of the prior art as described above, by measuring the temperature of the etching solution in the solution bath in several zones and operating the heater located in a relatively low temperature zone temperature of the etching solution in the solution bath It is an object of the present invention to provide a solution tank and a temperature control method capable of controlling temperature by zone to keep the overall uniformity.

상기와 같은 목적을 달성하기 위한 본 발명은 용액이 채워진 용액조에 있어서, 다수 구역으로 나눠진 용액조의 각 구역에서 상기 용액의 온도를 측정하는 다수 개의 온도측정센서들과, 상기 온도측정센서가 위치하는 구역에 각각 대응하도록 분할되어 독립적으로 발열하는 히터와, 상기 온도측정센서에서 입력된 각각의 측정 온도치들과 이를 평균한 평균온도치를 비교하여 상기 평균온도치보다 낮은 온도를 측정한 온도측정센서가 위치한 구역에 대응한 히터를 발열하는 제어부를 포함하여 구성된 것을 기술적 특징으로 한다. The present invention for achieving the above object is a solution filled tank, a plurality of temperature measuring sensors for measuring the temperature of the solution in each zone of the solution tank divided into a plurality of zones, the zone in which the temperature measuring sensor is located Zone where the temperature measuring sensor that measures the temperature lower than the average temperature value by comparing the heater and the heater that is separately divided to correspond to each other, and the respective measured temperature values input from the temperature measuring sensor and the average temperature value averaged It characterized by including a control unit for generating a heater corresponding to the technical feature.                     

또한, 본 발명은 용액조에 담겨진 용액을 구역별로 온도제어하는 방법에 있어서, 상기 용액조 내부에 담긴 용액을 다수의 구역에서 온도 측정하는 단계와, 각 구역별 측정된 온도치의 평균온도치를 계산하는 단계와, 평균온도치와 측정된 온도치를 비교하여 평균온도치 보다 낮게 측정된 구역만을 가열하는 단계를 포함하여 구성된 것을 기술적 특징으로 한다.In addition, the present invention is a method for temperature control of the solution contained in the solution tank for each zone, the step of measuring the temperature of the solution contained in the solution tank in a plurality of zones, and calculating the average temperature value of the measured temperature value for each zone And, comparing only the average temperature value with the measured temperature value and heating only the zone measured below the average temperature value.

아래에서, 본 발명에 따른 구역별 온도제어가 가능한 용액조 및 그 온도제어방법의 양호한 실시예를 첨부한 도면을 참조로 하여 상세히 설명하겠다.In the following, with reference to the accompanying drawings a preferred embodiment of a solution tank and a temperature control method capable of temperature control for each zone according to the present invention will be described in detail.

도면에서, 도 2는 본 발명의 한 실시예에 따른 용액조의 구조를 나타낸 개략도이고, 도 3은 도 2에 도시된 온도측정센서의 위치를 나타낸 용액조의 평면도이고, 도 4는 도 2에 도시된 히터의 개략도이며, 도 5는 도 3에 도시된 용액조에 담긴 식각용액의 온도제어방법을 나타낸 블록도이다.2 is a schematic view showing the structure of a solution bath according to an embodiment of the present invention, Figure 3 is a plan view of the solution bath showing the position of the temperature measuring sensor shown in Figure 2, Figure 4 is shown in Figure 2 5 is a schematic diagram of a heater, and FIG. 5 is a block diagram illustrating a temperature control method of an etching solution contained in the solution tank illustrated in FIG. 3.

도 2 내지 도 4에 도시된 바와 같이, 용액조(100)는 4구역으로 분할되고 각 구역에 1개씩의 온도측정센서(110)가 식각용액(140)에 침지되어 식각용액(140)의 온도를 측정한다. 그리고 용액조(100)의 저면에는 히터(120)가 장착되는데, 이 히터(120)는 4개의 섹션(120a, 120b, 120c, 120d)으로 구분되며 각 섹션(120a, 120b, 120c, 120d)마다 독립적으로 작동하여 발열한다. 여기에서 히터(120)의 4개의 섹션은 용액조(100)의 분할된 구역에 대응하여 위치한다.2 to 4, the solution tank 100 is divided into four zones, one temperature measuring sensor 110 in each zone is immersed in the etching solution 140, the temperature of the etching solution 140 Measure And the bottom of the solution tank 100 is equipped with a heater 120, which is divided into four sections (120a, 120b, 120c, 120d) and each section (120a, 120b, 120c, 120d) It operates independently and generates heat. Here four sections of the heater 120 are located corresponding to the divided zones of the solution bath 100.

또한 각 온도측정센서(110) 및 히터(120)의 각 섹션은 제어부(130)에 연결되고, 제어부(130)는 온도측정센서(110)에서 입력된 식각용액(140)의 온도에 따라 히터(120)의 각 섹션(120a, 120b, 120c, 120d)을 독립적으로 작동하여 용액조(100)에 수용된 식각용액(140)을 부분적으로 가열한다.In addition, each section of each of the temperature measuring sensor 110 and the heater 120 is connected to the control unit 130, the control unit 130 according to the temperature of the etching solution 140 input from the temperature measuring sensor (110) Each section 120a, 120b, 120c, 120d of 120 is operated independently to partially heat the etching solution 140 contained in the solution bath 100.

아래에서는 이와 같이 구성된 용액조에 의한 식각용액 온도제어방법에 대해 설명한다.Hereinafter, an etching solution temperature control method using the solution tank configured as described above will be described.

용액조(100)에 담긴 식각용액(140)에 침지되어 위치한 4개의 온도측정센서(110)는 실시간으로 식각용액(140)의 온도를 측정한다(S10). 그리고 측정한 온도와 비례한 전압의 전기적신호를 제어부(130)로 입력한다.Four temperature measuring sensors 110 immersed in the etching solution 140 contained in the solution tank 100 measures the temperature of the etching solution 140 in real time (S10). In addition, an electrical signal having a voltage proportional to the measured temperature is input to the controller 130.

제어부(130)에서는 각 온도측정센서(110)로부터 입력된 4개의 온도데이터(t1, t2, t3,..., tn)를 가지고, 평균온도(ta = (t1, t2, t3,..., tn)/n)를 계산한다(S20). The controller 130 has four temperature data (t1, t2, t3, ..., tn) input from each temperature measuring sensor 110, the average temperature (ta = (t1, t2, t3, ...) , tn) / n) is calculated (S20).

그리고 계산된 평균온도(ta)와 각 입력된 온도데이터(t1, t2, t3,....., tn)를 비교하여(S30) 평균온도(ta)보다 낮은 온도데이터를 찾고(S40), 평균온도(ta)보다 낮은 온도데이터를 입력한 온도측정센서(110)와 대응하는 히터(120)의 섹션(120a, 120b, 120c, 120d)을 작동하여 발열시킨다(S50).And comparing the calculated average temperature (ta) and each input temperature data (t1, t2, t3, ....., tn) (S30) to find the temperature data lower than the average temperature (ta) (S40), The sections 120a, 120b, 120c, and 120d of the heater 120 corresponding to the temperature sensor 110 that input the temperature data lower than the average temperature ta are operated to generate heat (S50).

이와 같이 용액조(100)에 담긴 식각용액(140)에 있어서, 각 온도측정센서(110)가 위치한 구역(140a, 140b, 140c, 140d)의 온도가 평균온도보다 저온일 경우에 해당하는 구역(140a, 140b, 140c, 140d)의 식각용액(140)을 가열하여 온도를 상승시킴으로써, 식각용액(140)의 온도를 균일화할 수 있다(S60).In this way, in the etching solution 140 contained in the solution tank 100, the area corresponding to the case where the temperature of the zone (140a, 140b, 140c, 140d) each temperature sensor 110 is located is lower than the average temperature ( By heating the etching solution 140 of 140a, 140b, 140c, 140d and raising the temperature, the temperature of the etching solution 140 can be made uniform (S60).

또한, 본 발명의 용액조(100)는 순환배관(111)이 설치되고 순환배관(111)에는 펌프(112)와 히터(120) 및 필터(114)가 장착되어 용액조 순환부 가열제어방식을 함께 구현할 수 있다.In addition, the solution tank 100 of the present invention is provided with a circulation pipe 111 and the circulation pipe 111 is equipped with a pump 112, a heater 120 and a filter 114 to control the solution tank circulation heating unit. It can be implemented together.

앞서 상세히 설명한 바와 같이, 본 발명의 구역별 온도제어가 가능한 용액조 및 그 온도제어방법은 용액조에 수용된 식각용액의 온도를 여러 곳에서 측정하고, 그 평균온도값을 계산하여 평균온도값 보다 낮은 온도가 측정된 구역만을 가열함으로써, 식각용액을 전체적으로 균일한 온도로 유지할 수 있다.As described in detail above, the solution tank and the temperature control method capable of temperature control according to the zone of the present invention measures the temperature of the etching solution accommodated in the solution bath at various places, the average temperature value is calculated to calculate the temperature lower than the average temperature value By heating only the measured area, the etching solution can be maintained at a uniform temperature as a whole.

또한, 본 발명의 구역별 온도제어가 가능한 용액조 및 그 온도제어방법은 식각용액 전체를 가열하지 않고 낮은 온도분포를 갖는 구역만 가열하기 때문에 에너지 절감형이라는 장점도 있다.In addition, the solution tank and the temperature control method that can control the temperature for each zone of the present invention has the advantage of being energy-saving because it heats only the zone having a low temperature distribution without heating the entire etching solution.

또한, 본 발명의 구역별 온도제어가 가능한 용액조 및 그 온도제어방법은 저온의 구역만을 가열하여 상승시키기 때문에, 온도분포가 발생하면 히터가 가동하여 신속하게 온도분포를 균일하게 조절할 수 있다. In addition, since the solution tank and the temperature control method capable of controlling the temperature for each zone of the present invention heat and raise only the low temperature zone, when the temperature distribution occurs, the heater can be operated to quickly and uniformly adjust the temperature distribution.

이상에서 본 발명의 구역별 온도제어가 가능한 용액조 및 그 온도제어방법에 대한 기술사상을 첨부도면과 함께 서술하였지만, 이는 본 발명의 가장 양호한 실시예를 예시적으로 설명한 것이지 본 발명을 한정하는 것은 아니다.In the above description, the technical concept of the solution tank and the temperature control method capable of controlling the temperature of each zone according to the present invention are described together with the accompanying drawings. However, the exemplary embodiments of the present invention are described by way of example. no.

Claims (2)

용액이 채워진 용액조에 있어서,In a solution tank filled with a solution, 다수 구역으로 나눠진 용액조의 각 구역에서 상기 용액의 온도를 측정하는 다수 개의 온도측정센서들과,A plurality of temperature measuring sensors for measuring the temperature of the solution in each zone of the solution tank divided into multiple zones, 상기 온도측정센서가 위치하는 구역에 각각 대응하도록 분할되어 독립적으로 발열하는 히터와,A heater which is divided so as to correspond to an area in which the temperature measuring sensor is located and generates heat independently; 상기 온도측정센서에서 입력된 각각의 측정 온도치들과 이를 평균한 평균온도치를 비교하여 상기 평균온도치보다 낮은 온도를 측정한 온도측정센서가 위치한 구역에 대응한 히터를 발열하는 제어부를 포함하는 것을 특징으로 하는 구역별 온도제어가 가능한 용액조.And a controller configured to generate a heater corresponding to a zone in which a temperature measuring sensor is located, the temperature being lower than the average temperature is measured by comparing the respective measured temperature values input from the temperature measuring sensor with the average temperature value averaged. Solution tank capable of temperature control by zone. 용액조에 담겨진 용액을 구역별로 온도제어하는 방법에 있어서,In the method for temperature control of the solution contained in the solution tank for each zone, 상기 용액조 내부에 담긴 용액을 다수의 구역에서 온도 측정하는 단계와,Measuring the temperature of the solution contained in the solution tank in a plurality of zones; 각 구역별 측정된 온도치의 평균온도치를 계산하는 단계와,Calculating an average temperature value of the measured temperature values for each zone; 평균온도치와 측정된 온도치를 비교하여 평균온도치 보다 낮게 측정된 구역만을 가열하는 단계를 포함하는 것을 특징으로 하는 구역별 온도제어가 가능한 용액조의 온도제어방법.Comparing the average temperature value and the measured temperature value, the temperature control method of the solution tank capable of temperature control according to the zone comprising the step of heating only the zone measured lower than the average temperature value.
KR1020030079867A 2003-11-12 2003-11-12 Chemical Bath Controllable Temperature and Its Temperature Control Method KR100790719B1 (en)

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KR20020025789A (en) * 2000-09-29 2002-04-04 엔도 마코토 Temperature controlling method, thermal treating apparatus, and method of manufacturing semiconductor device
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KR20020025789A (en) * 2000-09-29 2002-04-04 엔도 마코토 Temperature controlling method, thermal treating apparatus, and method of manufacturing semiconductor device
KR20030014116A (en) * 2001-08-07 2003-02-15 가부시키가이샤 히다치 고쿠사이 덴키 Temperature control method and semiconductor device manufacturing method

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