KR100783729B1 - OLED(Organic Light Emitting Diodes) Panel Fabrication process - Google Patents

Abstract

The present invention provides a transfer chamber for transporting a substrate; At least two deposition chambers coupled to an outer circumference of the transfer chamber and configured to deposit a specific material on a substrate provided in the transfer chamber; Is formed by being coupled to the outer periphery of the transfer chamber by a gate valve, and comprises a load lock chamber for loading the substrate into or out of the transfer chamber, at least one of the deposition chamber An inorganic deposition chamber for depositing an inorganic material, and at least another one provides an OLED panel deposition apparatus for an organic material deposition chamber for depositing an organic material on a substrate.

OLED panel, deposition equipment.

Description

Panel deposition apparatus for OLEDs {Organic Light Emitting Diodes (OLED) Panel Fabrication process}

1 is a cross-sectional detail view of a conventional organic material deposition apparatus

Figure 2 is a detailed view of the OLED panel deposition apparatus of the present invention

Figure 3 is a detailed view of the inorganic vapor deposition chamber of the present invention

Figure 4 is a detailed view of the organic vapor deposition chamber of the present invention

5 is an inorganic deposition state diagram of the present invention

6 is an organic deposition state diagram of the present invention

<Description of Symbols for Major Parts of Drawings>

Conventional organic material deposition chamber 1, OLED deposition apparatus 100, the transfer chamber 110, the transfer mechanism 112, the deposition chamber 120, the load lock chamber 130, the inorganic deposition chamber 200, inorganic Deposition chamber body 210, substrate mounting stage (212, 312), shower head (214, 316), inorganic supply unit 220, inorganic storage tank 222, connecting pipes (224, 234, 324, 334), ligand removal gas supply unit 230, ligand removal gas Storage tank 232, remote plasma generator 236, gate valve 240, organic material deposition chamber 300, organic material deposition chamber body 310, organic material precursor supply unit 320, purging gas supply unit 330, purging Gas storage tank 322, gate valve 340, o-ring (O), hinge (H), substrate (S), shadow mask (M),

The present invention relates to an OLED panel deposition apparatus capable of carrying out deposition of an inorganic thin film for a conductive channel of a TFT, a source / rain doping process, an organic thin film for emitting light, and an encapsulation film on an OLED substrate. As described in more detail, a conveyance chamber for conveying a substrate; At least two deposition chambers coupled to an outer circumference of the transfer chamber and configured to deposit a specific material on a substrate provided in the transfer chamber; Is formed by being coupled to the outer periphery of the transfer chamber by a gate valve, and comprises a load lock chamber for loading the substrate into or out of the transfer chamber, at least one of the deposition chamber An inorganic deposition chamber for depositing an inorganic material, and at least another one relates to a panel deposition apparatus for an OLED, characterized in that the organic deposition chamber for depositing an organic material on a substrate.

In general, the EL (Electro luminecence) display device, which is an organic display device, is one of the semiconductor flat display devices. Unlike other flat display devices, the EL display device is composed of a completely solid film and has an ideal structure in which heat generation is limited. In addition, the EL display device is a flat display device having an increasing demand in the industry due to its advantages of cold light emitting type.

Therefore, the competition for the development of EL display devices is fiercely developed not only in academia but also in research and development in general industry. In general, organic materials have many advantages, such as small driving voltage and high luminance, as display devices, compared to inorganic materials. Therefore, the organic materials have a globally recognized potential and application potential as next-generation display devices.

In order to manufacture the organic light emitting diode (OLED) substrate, an inorganic material deposition process and a patterning process for forming a thin film transistor (TFT) are repeatedly performed on the substrate, and then an organic material deposition for forming a light emitting cell is performed. . Then, an encapsulation film deposition process is performed to shield oxygen and moisture.

In the conventional case, a thin film (TFT) thin film is formed of a plasma enhanced chemical vapor deposition (PECVD) process after placing a substrate on an upper portion of a mounting table provided under a vacuum chamber. On the other hand, the organic thin film for luminescence is formed by thermal evaporation after placing the substrate on the lower portion of the mounting table provided in the upper portion of the vacuum chamber. Therefore, the conductive channel forming thin film and the light emitting organic thin film are formed by different deposition processes. However, when each thin film is deposited in a different manner, the OLED deposition apparatus does not constitute a single deposition system, and the process is performed by different independent equipment. Particularly, silicon deposited by conventional PECVD and LPCVD methods is problematic due to low electron mobility when fabricated in as-depo state when forming a thin film transistor channel, and unevenness of the channel forming layer when heat treated using a laser or furnace heating method. Due to the characteristics, it is difficult to control the uniformity of the panel. Above all, the problem becomes more serious in the large-sized process targeting large TVs, which requires a high-cost additional process.

In order to solve the above problems, the present invention homogeneously deposits an organic thin film and an encapsulation film for each function of an OLED including an inorganic thin film for TFT (TFT), fluorescent and phosphorescent materials on the OLED substrate. It is a technical problem to be achieved by the present invention to provide a panel deposition apparatus for an OLED.

In order to achieve the above object, the present invention is installed in the center, the transport chamber 110 is provided with a transport mechanism 112 (robot) for transporting the substrate, and is formed in conjunction with the outer peripheral portion of the transport chamber, At least two deposition chambers 120 for depositing a specific material on the substrate provided in the transfer chamber, and the outer peripheral portion of the transfer chamber 110 is formed by being coupled to the gate valve, the substrate in the transfer chamber 110 And one load lock chamber 130 for carrying in or taking out a substrate from the transfer chamber 110, wherein at least one of the deposition chambers 120 is an inorganic deposition chamber 200 for depositing inorganic materials on a substrate. , At least the other one is an organic material deposition chamber 300 for depositing an organic material on a substrate provides an panel deposition apparatus for an OLED.

Inorganic deposition chamber of the present invention can be made into a vacuum atmosphere inside, the chamber body is provided with a substrate mount for mounting a substrate therein; An inorganic supply unit provided outside the chamber main body and supplying an inorganic gas into the chamber main body; A ligand removal gas supply unit provided outside the chamber body and supplying an inorganic ligand removal gas into the chamber body; such that the crystalline inorganic thin film is formed directly on the substrate without a laser annealing process for crystallization. do.

In addition, the substrate mount table may further include a substrate temperature controller configured to adjust the temperature of the substrate mounted on the substrate mount table so that the inorganic material may be efficiently adsorbed while maintaining an appropriate temperature for the inorganic material to be adsorbed. do.

At this time, the inorganic gas is preferably a material having a structural formula of Si (C _m H _n ) _x (m, n, x is an integer).

The inorganic ligand removing gas is preferably hydrogen radicals or hydrogen ions.

The organic material deposition chamber of the present invention can be made into a vacuum atmosphere therein, the chamber body is provided with a substrate mounting table for mounting the substrate therein; An organic precursor supply unit provided outside the chamber body and supplying an organic precursor to the chamber body; It is provided on the outside of the chamber body, the purging gas supply unit for supplying a purging gas into the chamber body; so that it is configured to include, the organic material is deposited by the same method as the deposition method of the inorganic material.

In addition, the substrate mounting stage is further provided with a substrate temperature control unit that can adjust the temperature of the substrate mounted on the substrate mounting table, by maintaining the temperature of the substrate at a temperature suitable for the organic single molecules are deposited on the substrate Allow for deposition.

In addition, a shadow mask mounting part for placing a shadow mask for allowing the organic precursor to be deposited with a specific pattern on the substrate is further provided on the substrate mount to prevent the shadow mask from bending during the deposition of the organic material. .

In the present invention, the organic precursor supply unit, by transporting the vaporized organic precursor together with the transfer gas to be supplied into the chamber body, so that the required amount of the organic precursor is supplied into the chamber body at an appropriate speed.

In addition, in the present invention, at least four chambers arranged in a state inclined at a predetermined angle in the vertical direction are connected in parallel by a gate valve, and chambers at both ends of the chambers are load lock chambers, and chambers between both load lock chambers are A deposition chamber, wherein at least one of the deposition chambers is an inorganic deposition chamber for depositing an inorganic material on a substrate, and at least the other is an organic deposition chamber for depositing an organic material on a substrate, thereby providing a deposition apparatus for an OLED. Allows you to configure the device as an inline type as well as a type.

The deposition apparatus for oled according to the present invention is provided in a cluster type.

That is, as shown in FIG. 2, the transfer chamber 110 is provided at the center, and the deposition chamber 120 and the load lock chamber 130 are disposed around the transfer chamber 110.

In this case, the transfer chamber 110 serves to carry in and take out a substrate into each deposition chamber 120 that is coupled to the outer peripheral portion thereof. Therefore, this conveyance chamber 110 is provided with the conveyance mechanism 112 for conveying a board | substrate. In this invention, this conveyance mechanism 112 is provided with the robot which can carry out the board | substrate introduce | transduced into the load lock chamber 130, and can convey to a specific deposition chamber. Thus, when the conveying mechanism is provided by the conveying robot, there is an advantage that the conveyance of the substrate can be performed quickly. At this time, the transfer robot transfers by changing the horizontal position and the vertical position of the substrate. Since the transport robot is a technique well known in the art, a detailed description thereof will be omitted.

On the other hand, when a vapor deposition chamber is provided in an upright type | mold as shown in FIG. 3, this conveyance mechanism is provided not by a carrying robot but by a standing type | mold mounting stand. That is, as shown in Fig. 4, a mounting table provided with a mounting surface on which a substrate can be mounted is formed, and the mounting table can be rotated 90 degrees to stand. At this time, the fixing means (not shown in the drawing) to securely secure the substrate (S) mounted on the mount so as not to be separated from the mount should be provided. In the present invention, an electrostatic chuck is used as this fixing means. In the case of providing the stand type as described above, the deposition chamber is standing up, and thus the area occupied in the clean room is reduced. This mount forms one sidewall of the deposition chamber while the process is being processed in the deposition chamber.

Next, the load lock chamber 130 serves as a passage through which the deposition apparatus 100 for red is in communication with the outside. That is, the load lock chamber 130 serves as an intermediate passage for carrying in a new substrate to be processed into the transfer chamber 110 or for carrying out a processed substrate from the transfer chamber. Since the inside of the conveyance chamber 110 is always kept in a vacuum state, it cannot be directly connected to the outside of the atmospheric pressure state. Therefore, the buffer element called the load lock chamber efficiently communicates with the outside. The load lock chamber 130 communicates with the outside and the transfer chamber while frequently changing the inside into a vacuum atmosphere and an atmospheric pressure atmosphere.

Next, the deposition chamber 120 is provided to be coupled to the outer circumference of the transfer chamber 110 and serves to deposit a specific material on the substrate. In the present invention, at least two deposition chambers are disposed, at least one of the deposition chambers is an inorganic deposition chamber for depositing an inorganic material on a substrate, and at least the other is an organic deposition chamber for depositing an organic material on a substrate. Therefore, the deposition apparatus 100 for OLED according to the present invention has an advantage of depositing not only inorganic materials but also organic materials. In this case, it is preferable that the inorganic deposition chamber and the organic deposition chamber are alternately disposed to effectively deposit the inorganic and organic materials.

In the present invention, the inorganic deposition chamber 200, as shown in Figures 2 and 3, the inorganic vapor deposition chamber body 210; Inorganic supply unit 220; Ligand elimination gas supply unit 230; to be configured. The inorganic vapor deposition chamber body 210 is a component constituting the main body of the inorganic vapor deposition chamber, it is provided in a sealed structure that can be made inside the vacuum atmosphere. Therefore, the connection with the transfer chamber is also blocked by the gate valve 240 to be sealed. And the inorganic vapor deposition chamber body 210 is provided with a vacuum pump (not shown in the figure) that can suck and remove the gas inside the chamber body. In addition, a substrate mounting table 212 is provided below the inorganic vapor deposition chamber body 210. The substrate mounting table 212 is a component for mounting a substrate carried in the chamber body, and the deposition process proceeds with the substrate mounted on the upper surface thereof. In this embodiment, it is preferable that a substrate temperature controller (not shown) is further provided on the substrate mounting table 212. The substrate temperature control unit controls the temperature of the substrate mounted on the substrate mount table, and the temperature of the substrate is maintained at a temperature at which the inorganic material can be most efficiently deposited on the substrate. In this embodiment, this board | substrate temperature control part is comprised by the heating wire intrinsic in a board | substrate mounting table.

In addition, the inorganic deposition chamber 200 according to the present invention is provided with an inorganic material supply unit 220 for supplying an inorganic compound in a vapor phase into the inorganic vapor deposition chamber body 210. The inorganic material supply unit 220 is provided outside the inorganic vapor deposition chamber body 210 and connected to the inorganic vapor deposition chamber body 210. Inorganic material storage tank 222 is provided in the inorganic material supply unit 220, the inorganic material storage tank 222 is connected by the inorganic vapor deposition chamber body 210 and the connection pipe 224. Therefore, the inorganic compound stored in the inorganic storage tank 222 is vaporized and the appropriate amount is supplied to the inorganic vapor deposition chamber main body 210 at an appropriate time by the connecting pipe 224. The shower head 214 may be provided at the upper side of the inorganic vapor deposition chamber body 210 so that the gaseous inorganic compound supplied from the tank may be uniformly supplied into the inorganic vapor deposition chamber body 210.

In addition, the ligand removal gas supply unit 230 is a component for supplying a ligand removal gas into the inorganic vapor deposition chamber body 210. In the present invention, the ligand removal gas supply unit 230 is composed of a ligand removal gas storage tank 232, a connecting pipe 234, a remote plasma generator 236. Ligand removal gas storage tank 232 is a container that stores the ligand removal gas, the connection pipe 234 is a path connecting the ligand removal gas storage tank 232 and the inorganic vapor deposition chamber body 210. And the remote plasma generator 236 is provided in the middle region of the connecting pipe 234, and serves to activate the ligand removal gas passing through the connecting pipe 234.

Meanwhile, in the present invention, the vapor phase inorganic compound is a gas phase that can be deposited on a substrate, and the ligand removing gas is a reaction gas that serves to remove the organic compound ligand bonded to the inorganic material by reacting with the inorganic material deposited on the substrate.

In the present invention, a silicon organic compound having a structural formula of Si (C _m H _n ) _x (m, n, x is an integer) is used as an inorganic compound, and hydrogen radicals or hydrogen ions are used as the ligand removing gas. do. When SiR ₄ {wherein R is an organic compound having the structure of (C _m H _n ) _x } is deposited on the substrate, as shown in FIG. 5B, silicon atoms are deposited on the substrate and the organic ligands face in the opposite direction. After the silicon compound is deposited in this way, as shown in FIG. 6C, the ligand removing gas is supplied into the chamber to remove the organic compound bound to the silicon.

In this invention, hydrogen gas is used as this ligand removal gas. In this case, since the ligand removing gas must be highly reactive, the hydrogen gas passing through the connecting pipe connecting the ligand removing gas storage tank and the chamber body passes through the remote plasma generator and is decomposed into highly reactive hydrogen radicals or hydrogen ions. Supplied to the chamber body.

In the case of Alq3 deposition, which is one of the representative materials of OLED organic materials, in the case of Alq3 deposition, the organic precursor of (q: quinoline) Al is transferred to a substrate using TMA (Trimethylaluminum) as an organic precursor. Purge the inside of the chamber with purging gas while maintaining the substrate at 250 ° C.

R1: methyl, ethyl, the compound containing 1-10 carbon groups;

When a quinoline derivative combined with a suitable radical R1 is transferred into the chamber as a second precursor to induce reaction with TMA, Alq3 is simultaneously deposited and synthesized on the substrate.

Next, the organic material deposition chamber 300 according to the present invention, as shown in Figures 2 and 4, the organic material deposition chamber body 310; An organic precursor supply unit 320; It is configured to include a purging gas supply unit 330. Here, the organic material deposition chamber body 310 forms a main body of the organic material deposition chamber and has a structure capable of forming a vacuum atmosphere therein. Therefore, the gate valve 340 is provided in the opening connected to the transfer chamber. In addition, a substrate mounting table 312 having a mounting surface on which the substrate may be mounted is provided below the organic material deposition chamber body 310. The process proceeds in a state where the substrate is mounted on the substrate mounting table 312. The substrate mount table 312 is further provided with a substrate temperature controller (not shown in the drawing) that can adjust the temperature of the substrate S mounted on the substrate mount table 312 as in the inorganic deposition chamber 200. It is desirable to be.

In addition, the organic material deposition chamber 300 according to the present invention is provided with an organic material precursor supply unit 320 for supplying an organic material precursor into the organic material deposition chamber body 310. The organic precursor supply unit 320 is provided outside the organic vapor deposition chamber body 310 and connected to the organic vapor deposition chamber body 310. The organic precursor supply unit 320 is provided with two or more organic storage purging gas storage tank 322. The organic precursor supply unit 320 does not supply the final target organic material to be deposited on the substrate as it is, but is divided into two or more suitable precursor forms, respectively, and then supplied and deposited so that the target organic material is finally deposited on the substrate. Therefore, each organic precursor purging gas storage tank 322 stores each organic precursor, and is supplied to the chamber body in the gas phase. The purge gas reacts with the organic precursor deposited on the substrate to make the organic precursor the target organic. And the organic purging gas storage tank 322 and the organic vapor deposition chamber body 310 is connected by a connection pipe 324 connecting both, to ensure that the organic precursor is uniformly supplied to the inside of the organic vapor deposition chamber body 310 Showerhead 316 is provided for. In addition, the organic precursor supply unit 320 may be supplied with a transfer gas to be supplied to the chamber main body together with the organic precursor to supply the organic precursor to the chamber main body at an appropriate speed.

Next, the purge gas supply unit 330 is provided in the organic material deposition chamber 300. The purge gas supply unit 330 is a component for supplying a purge gas into the organic material deposition chamber body 310, and the purge gas storage tank 332 and the purge gas storage tank 332 for storing the purging gas, the organic material deposition It is composed of a connecting pipe 334 connected to the chamber body 310.

Hereinafter, with reference to the accompanying drawings will be described in detail a specific embodiment of the present invention.

Example 1

1st process (preparation process and inorganic material deposition process)

First, the OLED panel substrate S is loaded into the transfer chamber 110 through the load lock chamber 130, and at the same time, the transfer mechanism 112 of the transfer chamber 110 is carried out. After the substrate S is loaded into the inorganic deposition chamber 200, when the substrate S is mounted on the substrate mounting table 212 in the inorganic deposition chamber 200, the inorganic deposition chamber 200 and the transfer chamber 110 are provided. Close the connector between,

Initiating inorganic deposition, the inorganic supply unit 220 supplies the inorganic gas into the inorganic vapor deposition chamber body 210, (the substrate mounted on the substrate mount is maintained at a temperature suitable for depositing the inorganic material). Once deposited on the substrate, the vacuum chamber provided in the inorganic vapor deposition chamber 210 is operated to discharge the remaining inorganic gas, or the purging gas is injected into the inorganic vapor deposition chamber main body 210 to inject the inside of the inorganic vapor deposition chamber main body 210. After removing the inorganic gas of the ligand, and supplying the ligand removal gas to the inorganic vapor deposition chamber body 210 to remove the organic compound bonded to the silicon atoms to deposit the silicon layer in atomic layer unit on the substrate (S), A pumping or purging operation for removing hydrogen gas and organic compound gas in the inorganic vapor deposition chamber body 210 is performed.

2nd process (organic deposition process),

As described above, the inorganic vapor deposition process is completed, the substrate (S) is brought into the transfer chamber 110 from the inorganic vapor deposition chamber 200, and at the same time, the organic material deposition chamber 300 of the transfer mechanism 112 of the transfer chamber 110 After the substrate S is loaded into the substrate S, the substrate S is mounted on the substrate mounting table 312 in the organic material deposition chamber 300, and the connector between the organic and inorganic vapor deposition chamber and the transfer chamber is closed.

After mounting the substrate (S) carried into the organic material deposition chamber body 310 on the substrate mounting table 312, the shadow mask (M) is provided in the shadow mask mounting portion, the shadow mask (M) is an organic material deposition The position is measured by an optical CCD camera provided on the upper wall of the chamber 300 and a monitor connected thereto, and when the measured position does not coincide with the substrate S, the shadow mask M is driven to drive the shadow mask M. After aligning, the organic precursor (trimethylaluminum (TMA) supply unit is operated to supply the organic precursor (trimethylaluminum (TMA)) into the organic vapor deposition chamber body 310, and (at this time to the substrate mount The loaded substrate is maintained at 250 ° C.) After the supplied organic precursor (trimethylaluminum (TMA)) is deposited on the substrate S, a purging gas is supplied into the organic vapor deposition chamber body 310 to provide an organic material. I'm The sieve (trimethylaluminum (TMA)) is converted into a specific organic material, and the organic precursor (trimethylaluminum (TMA)) is supplied into the organic vapor deposition chamber body 310 to be combined with the first organic material, and then purged again. Gas to supply a second organic precursor (

R1: methyl, ethyl, and a compound containing 1 to 10 carbon groups) transfers a quinoline derivative combined with an appropriate radical R1 to the organic vapor deposition chamber body 310 as a second precursor to induce a reaction with TMA. Was deposited on the substrate (S) to prepare an OLED panel.

Example 2 (encapsulation film deposition process)

After bringing the substrate S into the inorganic deposition chamber 200, after supplying SiR 4 to the inorganic deposition chamber 200 and depositing the substrate S, the arsenic radicals or hydrogen ions are supplied into the inorganic deposition chamber 200 to supply silicon atoms. After removing the organic compound bound with the, after depositing the silicon thin film of the atomic layer unit on the substrate (S), supplying nitrogen gas into the inorganic vapor deposition chamber 200 to form a SiNx thin film, the substrate (S) Is transferred to the organic material deposition chamber 300 to convert the pyrylene (parylene) in the dimer form to 690 ℃ to convert into a monomer structure, and then transfer the converted pyrulene (parylene) organic source to the substrate (S) and parylene) thin film, repeating the SiNx / parylene deposition process to complete the encapsulation layer, if necessary, by repeating the above process, all the organic, inorganic and encapsulated film deposited in one device Red It was prepared in the panel (OLED Panel).

Hereinafter, the present invention will be described with reference to the drawings.

1 is a cross-sectional detail view of a conventional organic material deposition apparatus, Figure 2 is a detailed view of the OLED panel deposition apparatus of the present invention, Figure 3 is a detailed view of the inorganic deposition chamber of the present invention, Figure 4 is an organic of the present invention FIG. 5 is a detailed view of the deposition chamber, and FIG. 5 is a view showing the inorganic deposition state of the present invention, and FIG. 6 is a diagram showing the organic deposition state of the present invention. The conventional organic material deposition chamber 1, the OLED deposition apparatus 100, and the transfer chamber ( 110, the conveying mechanism 112, the deposition chamber 120, the load lock chamber 130, the inorganic deposition chamber 200, the inorganic deposition chamber body 210, the substrate mounting stage (212, 312), shower head (214, 316), Inorganic material supply unit 220, inorganic storage tank 222, connecting pipes (224,234, 324, 334), ligand removal gas supply unit 230, ligand removal gas storage tank 232, remote plasma generator 236, gate valve 240, Organic material deposition chamber 300, organic material deposition chamber body 310, organic precursor supply unit 320, purging gas supply unit 330, purging gas storage tank 322, crab It can be seen that shows the teubael bracket (340), o-ring (O), hinge (H), the substrate (S), a shadow mask (M).

Looking at the structure, as shown in Figures 2 to 4, is installed in the center, the conveying chamber 110 and the conveying mechanism 110 (robot) for conveying the substrate and the surrounding of the conveying chamber 110 In the deposition chamber 120 and the load lock chamber 130 that serves as a passage communicating with the outside is disposed in the structure of the panel deposition apparatus for the OLED.

The inorganic vapor deposition chamber 200, as shown in Figures 2 and 3, the inorganic vapor deposition chamber body 210; The inorganic material supply unit 220 and the ligand removing gas supply unit 230 connected to the inorganic material deposition chamber body 210 and the inorganic material deposition chamber body 210 are hermetically sealed structures capable of making an interior into a vacuum atmosphere, and a transport chamber 110. The gate valve 240 is opened and closed so as to be closed when connected to the), the inorganic vapor deposition chamber body 210 is a vacuum pump (not shown in the drawing) that can suck and remove the gas inside the chamber body, and the inorganic material A substrate mounting table 212 installed below the deposition chamber body 210 and provided with a substrate temperature control unit;

The inorganic material supply unit 220 for supplying an inorganic compound in a gaseous phase into the inorganic vapor deposition chamber body 210 is provided outside the inorganic vapor deposition chamber body 210 and connected to the inorganic vapor deposition chamber body 210 by a connection pipe 224. And a shower head in which an inorganic storage tank 222 installed at an end of the connecting pipe 224 and an appropriate amount evaporated by the connecting pipe 224 are uniformly supplied to an upper portion of the inside of the inorganic vapor deposition chamber body 210. Consists of 214,

The ligand removal gas supply unit 230 is a structure consisting of a ligand removal gas storage tank 232 installed at the end of the connection pipe 234, and a remote plasma generator 236 installed in the middle of the connection pipe 234. .

As shown in FIGS. 2 and 4, the organic material deposition chamber 300 is installed outside the organic material deposition chamber body 310 and the organic material deposition chamber body 310 and connected by connecting pipes 324 and 334. An organic precursor precursor 320 and a purging gas supplier 330 for supplying an organic precursor and a purging gas,

The organic material deposition chamber body 310 is a sealed structure that can be made inside the vacuum atmosphere, the gate valve 340 is opened and closed so as to be sealed when connected to the transfer chamber 110, and the organic material deposition chamber body 310 The vacuum pump (not shown in the drawing) that can suck and remove the gas inside the chamber body,

A substrate mounting table 312 installed below the organic material deposition chamber body 310 and provided with a substrate temperature control unit;

A shower head 316 for uniformly supplying an organic precursor installed inside the organic material deposition chamber body 310, and

The organic precursor supply unit 320 is provided on the outside of the organic material deposition chamber body 310 and two or more organic storage tank 322 connected to the end by a connecting pipe 324,

The purging gas supply unit 330 is a structure composed of a purging gas storage tank 332 connected to the purge gas storage tank 332 organic vapor deposition chamber body 310 by a connecting pipe 334.

Since the present invention includes both an organic deposition chamber and an inorganic deposition chamber, there is an advantage in that both organic and inorganic materials can be deposited by one deposition apparatus.

Specifically, the inorganic thin film for forming the conductive channel, the organic thin film for emitting light, and the encapsulation film may be deposited. Therefore, in manufacturing all-red substrate, it is possible to unify the manufacturing system, to prevent the glass substrate deflection and shadow mask deflection phenomenon appearing in the current (Thermal Evaporator) deposition method, the area occupied in the clean room There is an advantage that can greatly reduce the.

Claims (3)

delete A specific material is deposited on a transfer chamber 110 provided at a center and provided with a transfer mechanism 112 (robot) for transferring the substrate, and a substrate provided around the transfer chamber 110 and provided in the transfer chamber. At least two or more deposition chambers 120, Consists of one load lock chamber for loading the substrate (S) into the transfer chamber 110 or to take out the substrate from the transfer chamber 110, at least one of the deposition chamber 120 to deposit an inorganic material on the substrate In the inorganic deposition chamber 200, at least another one of the panel deposition apparatus for an OLED composed of an organic deposition chamber 300 for depositing an organic material on a substrate, The inorganic deposition chamber 200 includes an inorganic deposition chamber main body 210, an inorganic supply unit 220 and a ligand removing gas supply 230 connected to the inorganic deposition chamber main body 210, and the inorganic deposition chamber main body 210. The chamber body 210 is a sealed structure that can make the inside a vacuum atmosphere, the gate valve 240 is opened and closed to be closed when connected to the conveying chamber 110, and the inorganic vapor deposition chamber body 210 in the A vacuum pump (not shown) capable of sucking and removing gas, a substrate mounting table 212 installed below the inorganic vapor deposition chamber body 210 and provided with a substrate temperature control unit; The inorganic material supply unit 220 for supplying an inorganic compound in a gaseous phase into the inorganic vapor deposition chamber body 210 is provided outside the inorganic vapor deposition chamber body 210 and connected to the inorganic vapor deposition chamber body 210 by a connection pipe 224. And a shower head in which an inorganic storage tank 222 installed at an end of the connecting pipe 224 and an appropriate amount evaporated by the connecting pipe 224 are uniformly supplied to an upper portion of the inside of the inorganic vapor deposition chamber body 210. Consists of 214, The ligand removal gas supply unit 230 includes a ligand removal gas storage tank 232 installed at the end of the connection pipe 234 and a remote plasma generator 236 installed at an intermediate portion of the connection pipe 234. Panel deposition apparatus for all red, characterized in that. 3. The organic material deposition chamber 300 of claim 2, wherein the organic material deposition chamber 300 is installed outside the organic material deposition chamber body 310 and the organic material deposition chamber body 310, and the organic precursor and purging gas connected by the connection pipes 324 and 334. Organic precursor supply unit 320 and purging gas supply unit 330 to supply, The organic material deposition chamber body 310 is a sealed structure that can be made inside the vacuum atmosphere, the gate valve 340 is opened and closed so as to be sealed when connected to the transfer chamber 110, and the organic material deposition chamber body 310 The vacuum pump is capable of sucking and removing gas inside the chamber body, A substrate mounting table 312 installed below the organic material deposition chamber body 310 and provided with a substrate temperature control unit; A shower head 316 for uniformly supplying an organic precursor installed inside the organic material deposition chamber body 310, and The organic precursor supply unit 320 is provided on the outside of the organic material deposition chamber body 310 and two or more organic storage tank 322 connected to the end by a connecting pipe 324, The purge gas supply unit 330 is a panel for Oled, characterized in that it comprises a purging gas storage tank 332 connected to the purging gas storage tank 332, the chamber body 310 by a connecting pipe 334 Vapor deposition apparatus.

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