KR100765390B1 - 돔 형태의 샤워헤드를 이용한 박막 증착 장치 - Google Patents
돔 형태의 샤워헤드를 이용한 박막 증착 장치 Download PDFInfo
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- KR100765390B1 KR100765390B1 KR1020060039300A KR20060039300A KR100765390B1 KR 100765390 B1 KR100765390 B1 KR 100765390B1 KR 1020060039300 A KR1020060039300 A KR 1020060039300A KR 20060039300 A KR20060039300 A KR 20060039300A KR 100765390 B1 KR100765390 B1 KR 100765390B1
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- South Korea
- Prior art keywords
- gas
- dome
- substrate
- shower head
- thin film
- Prior art date
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45568—Porous nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/4557—Heated nozzles
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- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
Claims (6)
- 내부에 기판을 수용하여 증착 공정이 이루어지는 공간인 챔버;상기 챔버 내에 상기 기판을 고정하기 위한 척(chuck); 및상기 챔버 안으로 가스를 분출하도록 상측면에 가스유입홀을 가지며, 하측면에 타공된 가스분출홀을 가진 돔 형태이고, 상기 돔의 하단이 기판의 전면적을 덮는 샤워헤드를 포함하는 박막 증착 장치.
- 제 1 항에 있어서,상기 돔 형태의 샤워헤드는 상기 돔의 하단으로 갈수록 상기 돔의 내부 공간의 폭이 커지는 박막 증착 장치.
- 제 1 항에 있어서,상기 가스분출홀들은 상기 샤워헤드의 하측면 중앙부를 중심으로 방사상 구조로 배치되는 박막 증착 장치.
- 제 1 항에 있어서,상기 가스분출홀들의 직경은 상기 돔의 하단으로 갈수록 커지는 박막 증착 장치
- 제 1항에 있어서,상기 가스분출홀의 중심 간의 간격은 상기 샤워헤드의 상단에서 하단의 방향으로 갈수록 좁아지는 박막 증착 장치.
- 제 1 항 내지 제 5 항 중 어느 한 항에 있어서,상기 돔 형태의 샤워헤드의 외측면을 가열하는 가열 수단을 더 포함하는 박막 증착 장치.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020060039300A KR100765390B1 (ko) | 2006-05-01 | 2006-05-01 | 돔 형태의 샤워헤드를 이용한 박막 증착 장치 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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KR1020060039300A KR100765390B1 (ko) | 2006-05-01 | 2006-05-01 | 돔 형태의 샤워헤드를 이용한 박막 증착 장치 |
Publications (1)
Publication Number | Publication Date |
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KR100765390B1 true KR100765390B1 (ko) | 2007-10-10 |
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KR1020060039300A KR100765390B1 (ko) | 2006-05-01 | 2006-05-01 | 돔 형태의 샤워헤드를 이용한 박막 증착 장치 |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113790613A (zh) * | 2021-10-22 | 2021-12-14 | 广东美的暖通设备有限公司 | 罐式换热器及热泵系统 |
CN114737172A (zh) * | 2022-04-21 | 2022-07-12 | 成都高真科技有限公司 | 一种化学气相沉积装置 |
CN115537778A (zh) * | 2022-09-26 | 2022-12-30 | 盛吉盛(宁波)半导体科技有限公司 | 一种用于晶圆处理设备的进气装置及晶圆处理设备 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59219464A (ja) * | 1984-05-07 | 1984-12-10 | Hitachi Ltd | 気相化学反応方法 |
JPS6213573A (ja) * | 1985-07-10 | 1987-01-22 | Fujitsu Ltd | Cvd装置 |
JPH1064831A (ja) * | 1996-08-20 | 1998-03-06 | Fujitsu Ltd | 気相成長装置 |
KR20000062949A (ko) * | 1999-03-18 | 2000-10-25 | 에이에스엠 저펜 가부시기가이샤 | 플라즈마 cvd 막 형성장치 |
-
2006
- 2006-05-01 KR KR1020060039300A patent/KR100765390B1/ko active IP Right Grant
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59219464A (ja) * | 1984-05-07 | 1984-12-10 | Hitachi Ltd | 気相化学反応方法 |
JPS6213573A (ja) * | 1985-07-10 | 1987-01-22 | Fujitsu Ltd | Cvd装置 |
JPH1064831A (ja) * | 1996-08-20 | 1998-03-06 | Fujitsu Ltd | 気相成長装置 |
KR20000062949A (ko) * | 1999-03-18 | 2000-10-25 | 에이에스엠 저펜 가부시기가이샤 | 플라즈마 cvd 막 형성장치 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113790613A (zh) * | 2021-10-22 | 2021-12-14 | 广东美的暖通设备有限公司 | 罐式换热器及热泵系统 |
CN114737172A (zh) * | 2022-04-21 | 2022-07-12 | 成都高真科技有限公司 | 一种化学气相沉积装置 |
CN115537778A (zh) * | 2022-09-26 | 2022-12-30 | 盛吉盛(宁波)半导体科技有限公司 | 一种用于晶圆处理设备的进气装置及晶圆处理设备 |
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